JP2001332199A - Display panel, plane display device and plane display device driving method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display panel offering efficient gettering for achieving long service and high picture quality. SOLUTION: The display panel P1 comprises (A) a support 10, (B) a plurality of electron emission regions arranged in two-dimensional matrix on the support 10, and (C) dummy electron emission regions formed on the support between the electron emission regions. Each electron emission region contains one or more electron emission elements and each dummy electron emission region contains one or more dummy electron emission elements. Each dummy electron emission element has a dummy electron emission part 115 and a dummy gate electrode 113 having an opening portion 114 through which electrons emitted by the dummy electron emission part 115 pass. At least part of the dummy gate electrode 113 is formed of a gas trapping material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a display panel, a flat panel display, and a method of driving a flat panel display.

[0002]

2. Description of the Related Art In the field of display devices used for television receivers and information terminal equipment, the conventional mainstream cathode ray tubes (C
RT) to a flat-panel display device that can meet demands for thinner, lighter, larger screen, and higher definition is being studied. One of the flat display devices is a cold cathode field emission display (FED: field emission display,
2. Description of the Related Art A flat display device of a type in which two panels are arranged to face each other with a vacuum layer interposed therebetween, such as a field emission display, is known. In this cold cathode field emission display (hereinafter sometimes simply referred to as a display),
For example, when a high electric field is formed at the tip of a needle-shaped conductor or semiconductor material, electrons pass through a potential barrier in the conductor or semiconductor material due to the quantum tunnel effect even at room temperature, and are emitted from the tip. Such a phenomenon is caused by field emission or cold cathode emission (Co
Also called ld-Cathode Emission).

FIG. 61 is a conceptual diagram of a disassembled display device.
You. This display device has a first panel P ₁(Display panel)
And the second panel P_TwoAre placed facing each other across the vacuum layer.
The first panel P₁And the second panel P_TwoAnd at the periphery
It has a configuration joined via a frame 24. In FIG.
Indicates the joining site by hatching. First panel P₁Passing
And second panel P_TwoEach has an array of pixels and an actual table
Effective area that functions as a display screen (displayed with hatching)
And a peripheral circuit for surrounding the effective area and selecting pixels
The function is roughly divided into an invalid area in which a function is formed. Or
In order to maintain the degree of vacuum of the vacuum layer,
Getter made of material capable of trapping residual gas in vacuum layer
632 are provided. Getter 632 is usually two pieces
Panel P₁, P_TwoAt least one of the invalid areas
Have been. In the illustrated example, the first panel P₁Invalidity of
A through hole 630 is provided in the region, and this through hole 630 is
Panel P₁Getterbos arranged to cover from outside
The getter 632 is housed in the box 631.
In addition, another through hole 616 for evacuation is provided in another part of the invalid area.
Is provided in the through hole 616 after evacuation.
Is connected to a tip tube 617 that is sealed off.

FIG. 62 shows an example of such a display device in which an effective area of a first panel P ₁ (also referred to as a cathode panel) includes a plurality of cold cathode field emission devices (hereinafter, referred to as electron emission devices). FIG. 1 is a schematic partial end view showing a configuration example of a display device in which electron emission regions are arranged. Further, FIG. 63 shows a conceptual layout of the components in the first panel P _1, Figure 64 is a schematic exploded perspective view of a portion of the first panel P ₁ and the second panel P ₂ Is shown.

The illustrated electron-emitting device is a so-called Spindt-type device having a conical electron-emitting portion. The electron-emitting device includes a support 610 and a cathode electrode 6 formed on the support 610.
11, an insulating layer 612 formed on the support 610 and the cathode electrode 611, a gate electrode 613 formed on the insulating layer 612, a gate electrode 613 and the insulating layer 612.
And a conical electron emitting portion 615 formed on the cathode electrode 611 located at the bottom of the opening 614. In general, a striped conductive material layer (referred to as a cathode electrode conductive material layer) forming the cathode electrode 611 and a striped conductive material layer (referred to as a gate electrode conductive material layer) included in the gate electrode 613 are described. The projected images of these conductive material layers are formed in directions orthogonal to each other, and a region corresponding to a portion where the projected images of these striped conductive material layers overlap (corresponding to one pixel region, Emission area),
Usually, a plurality of electron-emitting devices are arranged. Further, such an electron emission area is located within the effective area of the first panel P ₁ .
Usually, they are arranged in a two-dimensional matrix.

On the other hand, a second panel P ₂ (also called an anode panel) includes a substrate 20 and a phosphor layer 21 (phosphor layer 21) formed on the substrate 20 according to a predetermined pattern.
R, 21G, 21B) and an anode electrode 23 formed over the entire surface of the phosphor layer 21.
Note that a black matrix 22 is formed on the substrate 20 between the phosphor layers 21. One pixel corresponds to the first panel P
An electron emission region (having a group of a predetermined number of electron emission elements) in which the cathode conductive material layer and the gate electrode conductive material layer on _one side overlap, and a second panel P facing the electron emission region It is composed of the _two phosphor layers 21. In the effective area, such pixels are arranged, for example, in the order of several hundred thousand to several million.

A relatively negative voltage is applied to the cathode electrode 611 from the control circuit 30, a relatively positive voltage is applied to the gate electrode 613 from the scanning circuit 31, and the anode electrode 23 is further applied than the gate electrode 613. A high positive voltage is applied from the acceleration power supply 32. When a display is performed in such a display device, a control signal (video signal) is input to the cathode electrode 611 from the control circuit 30 and the gate electrode 613 is input.
Is supplied with a scanning signal from the scanning circuit 31. Electrons are emitted from the electron emitting portion 615 by an electric field generated when a voltage is applied between the cathode electrode 611 and the gate electrode 613, and the electrons are attracted to the anode electrode 23.
It collides with the phosphor layer 21. As a result, the phosphor layer 21 is excited to emit light, and a desired image can be obtained. That is, the operation of the display device basically depends on the gate electrode 613.
And the voltage applied to the electron emission unit 615 through the cathode electrode 611.

[0008]

By the way, in the display device provided with the above-mentioned electron-emitting device, the phosphor layer 21 is provided.
Is irradiated with electrons, water or carbon dioxide trapped on the surface or inside of the phosphor layer 21 obtains energy, and forms as it is or in the form of decomposition products such as carbon monoxide, oxygen, and hydrogen. Desorbed or released into the vacuum layer. Any gas desorbed or released into the vacuum layer in this way is collectively referred to as "released gas" for convenience. Whenever the emitted gas is adsorbed on the surface of the electron emitting portion 615 or the adsorbed emitted gas is desorbed again from the surface of the electron emitting portion 615, the work function of the electron emitting portion 615 changes each time, and the emitted electron is changed. This causes noise due to current fluctuation.
For example, it is known that when oxygen gas is adsorbed on the surface of the electron emitting portion 615 made of tungsten, the work function of the surface of the electron emitting portion 615 increases by about 1 to 2 eV,
As a result, the emission electron current density is 10% to 1 of the normal state.
%. Further, when the released gas is ionized and positive ions are generated in the vacuum layer, the positive ions are accelerated toward the electron emitting portion 615 by the positive voltage applied to the anode electrode 23 through the acceleration power supply 32, and are accelerated. Is sputtered to cause deterioration.

The above positive ions or electrons can further enter the gate electrode 613 and the insulating layer 612 located near the electron emitting portion 615. As a result, the gate electrode 613
Water or carbon dioxide adsorbed or occluded in the insulating layer 612 is desorbed or released, and the degree of vacuum near the electron emitting portion 615 is temporarily deteriorated (that is, the pressure is increased).
Local discharge may occur between the gate electrode 613 and the electron-emitting portion 615 in some cases. Once the local discharge occurs, the sputter of the constituent material existing near the electron emitting portion 615, the temperature rise of the constituent members, and the generation of further released gas progress in a chain to amplify the discharge, and in the worst case, Electron emission unit 61
5 is damaged and electron emission becomes impossible. As a result, the life of the display device is deteriorated.

The above-described getter 632 is provided as a measure for avoiding such inconvenience caused by the released gas. The getter 632 is made of a chemically active material such as barium, magnesium, zirconium, or titanium, and captures gas until an equilibrium state corresponding to the partial pressure of the released gas in the atmosphere is achieved. In addition, the gas molecules once trapped diffuse into the getter 632 to form a solid solution together with the constituent materials, and therefore are not normally released again.

Although the getter 632 has an excellent gas trapping performance as described above, since the getter 632 is conventionally provided in the invalid area of the display device, the gas trapping performance of all the electron-emitting devices in the effective area is high. It is hard to say that it has been effectively demonstrated. That is, except for a part of the electron-emitting devices existing in the vicinity of the getter 632, most of the electron-emitting devices emit the gas by the getter 632 immediately even if the pressure is increased by the emitted gas in the vicinity of the electron-emitting portion 615. Gas trapping cannot be expected, and it is difficult to effectively prevent local discharge.

FIG. 65 schematically shows an example of a pressure distribution in a vacuum layer when gas molecules are emitted from the electron emitting portion 615. For example, assuming that gas molecules are released from the gate electrode 613, the insulating layer 612, or the like at an arbitrary position D near the electron emitting portion 615 in the vacuum layer, the pressure at the position D at which the gas molecules are released is, for example, about 1 Pa. It may rise locally and cause a discharge. At this time, if the position D is in the vicinity of the getter box 631, it is possible to prevent an increase in pressure and discharge in the vacuum layer by the gas capturing action of the getter 632. However, as shown in FIG. 65, when the gas molecules are released at the position D away from the getter box 631, the gas capture action by the getter 632 is small, so that the discharge and the release of the gas molecules occur in a chain. Such a vicious cycle is likely to occur.

Accordingly, the present invention provides a flat display device capable of achieving a long life and high image quality by efficient gettering, a display panel constituting such a flat display device, and further efficiently captures gas. It is an object of the present invention to provide a method of driving a flat display device which enables the above.

[0014]

According to the present invention, there is provided a display panel comprising: (A) a support; and (B) a plurality of electron-emitting devices arranged on the support in a two-dimensional matrix. A region and (C) a dummy electron emission region formed on the support between the electron emission region and each electron emission region, wherein each electron emission region comprises one or a plurality of electron emission elements; Each of the electron-emitting devices includes an electron-emitting portion and a gate electrode provided with an opening through which electrons emitted from the electron-emitting portion pass.
Or each of the dummy electron-emitting devices includes a dummy electron-emitting portion, and a dummy gate electrode provided with an opening through which electrons emitted from the dummy electron-emitting portion are passed. At least a part of the gate electrode is made of a gas trapping material.

According to the flat display device of the present invention for achieving the above object, a first panel and a second panel are arranged to face each other across a vacuum layer, and pixels are arranged in a two-dimensional matrix. A flat panel display device having an effective area comprising: (A) a support; (B) a plurality of electron-emitting areas arranged on the support in a two-dimensional matrix to form pixels; And (C) a dummy electron-emitting region formed on the support between the electron-emitting region and the electron-emitting region. Each electron-emitting region is composed of one or a plurality of electron-emitting devices. The emission element is an electron emission unit,
And a gate electrode provided with an opening through which electrons emitted from the electron emitting portion are passed, and each dummy electron emitting region is configured by one or a plurality of dummy electron emitting elements,
Each dummy electron-emitting device includes a dummy electron-emitting portion, and a dummy gate electrode provided with an opening through which electrons emitted from the dummy electron-emitting portion are passed. It is characterized by comprising.

In order to achieve the above object, according to a method of driving a flat display device of the present invention, a first panel and a second panel are arranged to face each other with a vacuum layer interposed therebetween, and pixels are arranged in a two-dimensional matrix. A flat panel display having an effective area, wherein the first panel is arranged in a two-dimensional matrix on a (A) support and (B) a support, and a plurality of electron emission elements constituting pixels are provided. A region and (C) a dummy electron emission region formed on the support between the electron emission region and each electron emission region, wherein each electron emission region comprises one or a plurality of electron emission elements; Each electron-emitting device includes an electron-emitting portion, and a gate electrode provided with an opening through which electrons emitted from the electron-emitting portion are passed, and each dummy electron-emitting region is formed by one or more dummy electron-emitting devices. Are configured and each dummy The emission element includes a dummy electron emission portion, and a dummy gate electrode provided with an opening through which electrons emitted from the dummy electron emission portion are passed, and at least a part of the dummy gate electrode is a planar type made of a gas trapping material. This is a method for driving a flat display device in which electron emission regions arranged in a row direction are sequentially operated in a column direction in a display device.

In the method of driving the flat display device according to the first aspect of the present invention, when at least one electron emission region in one row of electron emission regions is operated, all dummy electron emission regions are operated. It is characterized by the following.

Further, in the flat display device driving method according to the second aspect of the present invention, when at least one electron emission region in one row of electron emission regions is operated, the vicinity of the one row of electron emission regions is reduced. Characterized in that part or all of the dummy electron emission region is operated.

In the flat display device driving method according to the second aspect of the present invention, when at least one electron emission region in one row of electron emission regions is operated, the vicinity of the one row of electron emission regions is reduced. Some or all of the dummy electron emission regions are operated, but some or all of the dummy electron emission regions adjacent to both sides of one row of electron emission regions may be operated, or dummy electron emission regions adjacent to one side may be operated. Part or all of the area may be activated or activated 1
Some or all of the dummy electron emission regions located on one side or both sides of one row of electron emission regions that operate after the row of electron emission regions may be activated. That is, a part or all of the dummy electron emission region may be activated prior to the electron emission region of one row to be activated. Alternatively,
Some or all of the dummy electron emission regions included in one row of electron emission regions and adjacent to the electron emission regions may be activated.

In the flat panel display device or the method of driving the same according to the present invention, the first panel corresponds to a display panel, and may be called a cathode panel, and the second panel may be called an anode panel.

In the display panel, the flat display device or the flat display device driving method of the present invention (hereinafter, these may be collectively simply referred to as the present invention), “capture” is used.
Includes absorption, adsorption, occlusion, and sorption.

In the present invention, the dummy electron emission region does not necessarily have to be provided between all adjacent electron emission regions.

In the present invention, the dummy gate electrode may have a single layer structure of a gas trapping layer made of a gas trapping material, or at least a first layer made of a conductive material,
Laminated structure with a second layer (gas trapping layer) made of a gas trapping material, at least lamination of a first layer made of an insulating material and a second layer (gas trapping layer) made of a conductive gas trapping material It can also be structured. In some cases, a laminated structure of a first layer made of a conductive material, a second layer made of an insulating material, and a third layer (gas trapping layer) made of a gas trapping material, A first layer (gas trapping layer), a second layer of an insulating material, and a third layer (gas trapping layer) of a conductive gas trapping material
And a laminated structure of Further, a laminated structure of four or more layers may be used.

In the present invention, at least a part of the gate electrode may be made of a gas trapping material. In this case, the gas trapping material forming the dummy gate electrode and the gas trapping material forming the gate electrode may be different gas trapping materials, but are the same gas trapping material from the viewpoint of simplifying the manufacturing process. Is preferred. Further, the structure of the gate electrode and the structure of the dummy gate electrode are preferably the same from the viewpoint of simplifying the manufacturing process.

In this case, the gate electrode can also have a single layer structure of a gas trapping layer made of a gas trapping material, or at least a first layer made of a conductive material and a second layer made of a gas trapping material ( It is also possible to adopt a laminated structure of at least a first layer made of an insulating material and a second layer (a gas trapping layer) made of a conductive gas trapping material. In some cases, a laminated structure of a first layer made of a conductive material, a second layer made of an insulating material, and a third layer (gas trapping layer) made of a gas trapping material, First layer (gas trapping layer)
, A second layer made of an insulating material, and a third layer (a gas trapping layer) made of a conductive gas trapping material. Further, a laminated structure of four or more layers may be used. In the case where the dummy gate electrode and / or the gate electrode has a laminated structure, not all the portions of the dummy gate electrode and / or the gate electrode need to have a laminated structure, and may have a partially laminated structure. However, in this case, the portion having no laminated structure needs to have conductivity.

In the present invention, when the dummy gate electrode or the dummy gate electrode and the gate electrode have a laminated structure of, for example, two layers, the first layer and the second layer may have the same pattern. Then, the second layer may have a pattern covering the first layer, or the first layer may have a pattern covering the second layer. When the first layer is made of a conductive material, the second layer may be made of any of a conductive material and an insulating material. From the support side,
The first layer and the second layer may be laminated in this order,
The layers may be stacked in the order of the first layer. In the case of a three-layer structure, a first layer, a second layer, and a third layer may be stacked in this order from the support side, or a third layer, a second layer, and a first layer.
They may be stacked in the order of layers. It is preferable that the outermost surface is formed of a layer made of a gas trapping material from the viewpoint of increasing the gas trapping ability.

In the present invention including a mode in which the gas trapping material forming the dummy gate electrode and the gas trapping material forming the gate electrode are formed of the same gas trapping material, the gas trapping material is not affected by an increase in temperature. Accordingly, it is preferable to have a characteristic of increasing the gas capturing ability. If the gas trapping material has a characteristic that the gas trapping ability increases with an increase in temperature, the temperature of the gas trapping material rises as a result of collision of emitted gas and electrons from the phosphor layer and the like with the dummy gate electrode, Rather than releasing gas or the like as in ordinary substances, the gas capturing ability of the gas capturing material is improved.
Therefore, it is possible to prevent the operation of the flat display device from becoming unstable due to the temperature rise. Alternatively, it is preferable that the gas trapping material be activated so as to have a gas trapping ability by being subjected to a heat treatment. Examples of the heat treatment include irradiation of the gas trapping material with an electron beam, and heat treatment in a high-temperature furnace in a vacuum atmosphere or an inert gas atmosphere such as argon or helium. Alternatively, it is preferable that the gas trapping material has a characteristic that the gas trapping ability increases as the temperature rises due to electron collision. If the adsorptive material has such a characteristic that the gas trapping ability increases with the temperature rise due to the collision of electrons, the temperature of the gas trapping material rises due to the collision of the electrons with the dummy gate electrode. It does not emit gas or the like unlike a substance, but rather improves the gas capturing ability of the gas capturing material. Therefore, it is possible to prevent the operation of the flat display device from becoming unstable due to the temperature rise.

In the present invention, the electron-emitting portion and the dummy electron-emitting portion are electrically and physically independent from each other, and the stripe-shaped gate electrode forming layer on which the gate electrode is formed and the dummy gate electrode are formed. A dummy gate electrode is formed on a striped gate electrode forming layer on which a gate electrode is formed (that is, the gate electrode and the dummy gate electrode forming layer are electrically and physically independent from each other). The gate electrode is electrically and physically connected), and the electron emission portion and the dummy electron emission portion are electrically and physically independent from each other.
All the gate electrodes and the dummy gate electrodes constituting the panel are one plate-shaped (sheet) electrode constituting layer (for example, a single-layer structure made of a gas trapping material, or a first layer made of a conductive material or an insulating material). Layer and a second layer (gas trapping layer) made of a gas trapping material), wherein the electron emitting portion and the dummy electron emitting portion are electrically and physically independent from each other. And the stripe-shaped conductive material layer forming the dummy electron emission portion is common (that is, electrically and physically connected), and the stripe on which the gate electrode is formed is formed. -Shaped gate electrode constituent layer and stripe-shaped dummy gate electrode constituent layer on which the dummy gate electrode is formed are electrically and physically independent from each other in a display panel or a flat display device. Kicking the first
All of the components of the electron emission portion and the dummy electron emission portion constituting the panel are made of a single plate-shaped (sheet) material, and a stripe-shaped gate electrode configuration layer having a gate electrode formed thereon and a dummy gate. There are five configurations that are electrically and physically independent of the stripe-shaped dummy gate electrode configuration layer on which the electrodes are formed.

In the flat display device according to the present invention, an electron emission portion driving circuit electrically connected to the electron emission portion and the dummy electron emission portion, and a gate electrically connected to the gate electrode and the dummy gate electrode. Although a configuration further including an electrode driving circuit can be adopted, the following circuit configuration is preferable from the viewpoint that the dummy gate electrode can more effectively capture the released gas.

[1] In the above configuration, the electron emission section drive circuit electrically connected to the electron emission section, the gate electrode drive circuit electrically connected to the gate electrode, and the dummy electron emission section electrically connected to the dummy electron emission section. A connected dummy electron emission section drive circuit, and a dummy gate electrode drive circuit electrically connected to the dummy gate electrode. [2] In the above or another configuration, the electron emission portion drive circuit electrically connected to the electron emission portion, the dummy electron emission portion drive circuit electrically connected to the dummy electron emission portion, and the gate electrode and the dummy. A gate electrode / dummy gate electrode driving circuit electrically connected to the gate electrode. [3] In the above or another configuration, an electron emission portion / dummy electron emission portion drive circuit electrically connected to the electron emission portion and the dummy electron emission portion, a gate electrode drive circuit electrically connected to the gate electrode, And a dummy gate electrode drive circuit electrically connected to the dummy gate electrode.

In the present invention, each of the electron-emitting devices includes (A) an insulating layer provided on a support, (B) a gate electrode provided on the insulating layer, and (C) a gate electrode. An opening that penetrates and is provided in the insulating layer;
And (D) an electron-emitting portion provided in the opening. The electron-emitting device having such a configuration is referred to as an electron-emitting device according to the first configuration for convenience.
The electron-emitting device having such a configuration is a so-called cold cathode field emission device, and a flat display device having the electron-emitting device having such a configuration is a so-called cold cathode field emission display device.

On the other hand, each dummy electron-emitting device includes (A) the insulating layer provided on the support, (B) a dummy gate electrode provided on the insulating layer, and (C) a dummy gate. An opening penetrating the electrode, and provided in the insulating layer;
And (D) a dummy electron emission portion provided in the opening. The dummy electron-emitting device having such a configuration is also a cold cathode field emission device.
Is called a dummy electron-emitting device according to the above configuration.

Alternatively, each of the electron-emitting devices may comprise (A) a band-shaped spacer made of an insulating material disposed on a support, and (B) a gate electrode made of a band-shaped material layer having a plurality of openings. And (C) an electron-emitting portion;
A configuration in which the strip-shaped material layer is stretched so as to be in contact with the top surface of the spacer and so that the opening is located above the electron-emitting portion can also be adopted. The electron-emitting device having such a configuration is also a cold cathode field emission device, and the electron-emitting device having such a configuration is referred to as an electron-emitting device according to the second configuration for convenience. The display device is also a so-called cold cathode field emission display device.

On the other hand, each of the dummy electron-emitting devices is composed of (A) a band-shaped spacer made of an insulating material disposed on a support, and (B) a band-shaped gas trapping material layer having a plurality of openings formed thereon. The band-shaped gas trapping material layer is formed so as to be in contact with the top surface of the spacer and to have an opening located above the dummy electron emitting portion. A bridged configuration can also be used. The dummy electron-emitting device having such a configuration is also a cold cathode field emission device, and the dummy electron-emitting device having such a configuration is referred to as a dummy electron-emitting device according to the second configuration for convenience.

It is preferable that the electron-emitting device according to the first or second configuration described above and the dummy electron-emitting device have substantially the same structure from the viewpoint of simplifying the manufacturing process. Hereinafter, the electron-emitting device will be described, but the description can also be applied to a dummy electron-emitting device. Therefore, description of the dummy electron-emitting device will be omitted.

In the present invention, any conventionally known type of electron-emitting device can be provided according to the form of the electron-emitting portion. For example, a structure in which a cathode electrode is provided over a support, an insulating layer is formed over the cathode electrode and the support, and an electron-emitting portion is formed over the cathode electrode located at the bottom of the opening can be given. . A so-called Spindt-type electron-emitting device having a conical electron-emitting portion, a so-called crown-type electron-emitting device having a crown-shaped electron-emitting portion, a flat electron A so-called flat electron-emitting device having an emission portion can be given. Alternatively, an electron emission layer (substantially functioning as a cathode electrode) is provided on the support, an insulating layer is formed on the electron emission layer and the support, and the electron emission layer located at the bottom of the opening is an electron emission layer. A configuration corresponding to the emission section (a so-called flat-type electron emission element or a crater-type electron emission element) can also be employed.

Alternatively, in the present invention, the electron-emitting device may be configured such that the insulating layer covers the electron-emitting layer, the opening penetrates the electron-emitting layer, and the electron-emitting portion is exposed on the side wall surface of the opening. It can also be constituted by the ends of the electron emission layer described above. As an electron-emitting device having such a configuration, a so-called edge-type electron-emitting device can be exemplified. here,
The “insulating layer covering the electron-emitting layer” may cover only the upper surface and the side surface of the electron-emitting layer, or may cover the entire periphery (that is, the upper surface, the side surface, and the bottom surface) of the electron-emitting layer. Good. As a practical configuration of the insulating layer that covers the entire periphery of the electron emission layer, a two-layer configuration including an upper insulating layer and a lower insulating layer is possible.

In the present invention, as the gas trapping material (or the constituent material of the gas trapping layer), any conventionally known material as a getter material can be used.
Examples of the getter material include a so-called evaporation type material that evaporates in a vacuum layer like barium and forms a thin film on the surface of an internal component facing the vacuum layer to exhibit a gettering function, and zirconium (Zr). , Titanium (Ti), zirconium-
Solid state in vacuum layer like aluminum alloy, zirconium-vanadium-aluminum alloy, titanium-zirconium-vanadium-iron alloy, zirconium-vanadium-iron alloy, mixture of zirconium powder and graphite powder, or magnesium There is a so-called non-evaporable material exhibiting a gettering function, but the material used in the present invention is a non-evaporable material.
A dummy gate electrode or gate electrode made of a gas trapping material,
Alternatively, as a method for forming the gas trapping layer, in the case of the dummy electron-emitting device according to the first configuration, a vapor deposition method, a sputtering method, a CVD method, and a coating method can be used. In the case of the dummy electron-emitting device according to the second configuration,
A dummy gate electrode made of a band-shaped gas trapping material layer may be prepared in advance, or in the case of a laminated structure, for example, a band-shaped metal layer is used as a first layer, and the surface of the first layer is The second layer which is a gas trapping layer may be formed by a vapor deposition method, a sputtering method, a CVD method, a coating method, or the like. In addition, zirconium-as a gas trapping material having a property that the gas trapping ability increases with an increase in temperature.
An aluminum alloy and a titanium-zirconium-vanadium-iron alloy can be exemplified.

In the present invention, the support which is a component of the display panel or the first panel only needs to have at least a surface made of an insulating member, and a glass substrate and a glass substrate having an insulating film formed on the surface. , A quartz substrate, a quartz substrate having an insulating film formed on its surface, and a semiconductor substrate having an insulating film formed on its surface. Further, the substrate, which is a component of the second panel, can be configured similarly to the support.

As a specific configuration of the flat panel display device or the second panel in the flat panel display driving method of the present invention, an anode electrode and a phosphor layer are provided in an effective area, and the phosphor layer faces the electron emission area. Configuration. The anode electrode and the phosphor layer are formed on the substrate in the order of the phosphor layer and the anode electrode, or alternatively, the anode electrode,
The phosphor layers are formed in this order. In the former case, a metal back film may be formed on the anode electrode. In the latter case, a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor layer. The anode electrode is
The anode electrode may be a type in which the effective region is covered with one sheet of conductive material, or may be an anode electrode in which anode electrode units corresponding to one or a plurality of electron emission regions are assembled. The phosphor layer is formed in a stripe shape or a dot shape. In the case of color display, phosphor layers corresponding to the three primary colors of red (R), green (G), and blue (B) patterned in stripes or dots are alternately arranged. Although the stripe-shaped or dot-shaped phosphor layer faces the electron emission region,
It does not face the dummy electron emission region. A black matrix may be formed between the phosphor layers. The anode electrode can be made of, for example, a metal thin film made of aluminum or a transparent conductive material such as ITO (indium tin oxide).

According to the present invention, since the dummy electron-emitting device is provided with the dummy electron-emitting region and the dummy electron-emitting device constituting the dummy electron-emitting region is provided with the dummy gate electrode at least partially composed of a gas trapping material, By emitting electrons and colliding with the dummy gate electrode, the gas trapping material constituting the dummy gate electrode can be activated. As a result, the released gas can be reliably and stably captured by the gas capturing material.
The electrons emitted from the dummy electron emission region are attracted to the anode electrode but do not collide with the phosphor layer, so that there is no problem in displaying on the flat display device.

[0042]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings based on embodiments of the present invention (hereinafter abbreviated as embodiments).

(Embodiment 1) In Embodiment 1, a flat display device (hereinafter simply referred to as a display device) according to a first configuration of the present invention, and a display panel forming the display device will be described. About. FIG. 1 shows a schematic partial end view of the display device of Embodiment 1, and FIG. 2 shows a schematic layout of components of the display panel. 3 is an exploded conceptual view of the display device of the first embodiment. FIG. 4 is an exploded perspective view of a part of the display device of the first embodiment. FIGS. 5A and 5B are enlarged schematic end views. FIG. 1 is a diagram when the display device is cut along a virtual vertical plane including the direction in which the cathode electrode extends. In FIG. 2, a region surrounded by a dashed line is an effective region. In the arrangement diagram, the illustration of the openings is omitted, the electron emission regions are indicated by oblique lines from upper right to lower left, and the dummy electron emission regions are indicated by oblique lines from upper left to lower right.

In the first embodiment, the electron-emitting portion or the dummy electron-emitting portion in the electron-emitting device and the dummy electron-emitting device is a conical so-called Spindt type having the same structure. However, the present invention is not limited to this. Instead, various types of electron emitting portions or dummy electron emitting portions described later can be used. The same applies to the following embodiments. Further, a dummy gate electrode is formed on a stripe-shaped gate electrode constituent layer on which the gate electrode is formed (that is, a dummy gate electrode is formed).
The gate electrode and the dummy gate electrode are electrically and physically connected), and the electron emission portion and the dummy electron emission portion are electrically and physically independent (the above-described configuration). .

As shown in FIG. 3 which is a conceptual view of the disassembled display device, in the display device of the first embodiment, the first panel P ₁ (display panel) and the second panel P ₂ sandwich a vacuum layer. The first panel P ₁ and the second panel P ₂ are arranged so as to face each other and are joined via a frame 24 at the periphery. In FIG. 3, the joining site is indicated by hatching. Each of the first panel P ₁ and the second panel P ₂ has an effective area where pixels are arranged and functions as an actual display screen (displayed by hatching).
And an ineffective area surrounding the effective area and formed with a peripheral circuit for selecting pixels and the like. Another through hole 16 for evacuation is provided in the invalid area, and a chip tube 17 that is sealed off after evacuation is connected to this through hole 16.

As shown in FIG. 5A, the Spindt-type electron-emitting device has a support 10, a cathode electrode 11 formed on the support 10, and a cathode electrode 11 formed on the support 10 and the cathode electrode 11. Insulating layer 12, gate electrode 13 formed on insulating layer 12, gate electrode 13 and insulating layer 1
2, and a conical electron-emitting portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14. As shown in FIGS. 2 and 4, a stripe-shaped conductive material layer (a conductive material layer for a cathode electrode) constituting the cathode electrode 11 and a gate electrode 13 are formed.
Is a region in which projected images of these layers are formed in directions orthogonal to each other, and a region corresponding to a portion where the projected images of these striped layers overlap (one pixel). In the first embodiment, a plurality of electron-emitting devices are arranged in an area corresponding to a minute area and an electron-emitting area. Further, such electron-emitting region, the first panel P ₁ effective area, are arranged generally in a two-dimensional matrix.

On the other hand, as shown in FIG. 5B, a Spindt-type dummy electron-emitting device comprises a support 10 and a support 1.
, The insulating layer 12 formed on the support 10 and the dummy cathode electrode 111, the dummy gate electrode 113 formed on the insulating layer 12, the dummy gate electrode 113, and the insulating layer 12. It comprises an opening 114 provided in the layer 12 and a conical dummy electron emitting portion 115 formed on the dummy cathode electrode 111 located at the bottom of the opening 114. As shown in FIGS. 2 and 4, the dummy cathode electrode 111 is formed in a striped gate electrode forming layer forming the gate electrode 13, and the gate electrode forming layer and the striped gate forming the dummy cathode electrode 111 are formed. The dummy cathode electrode conductive material layer is formed such that projected images of these layers are formed in directions orthogonal to each other, and a region corresponding to a portion where the projected images of these striped layers overlap is a dummy electron emission region. Is equivalent to Then, such a dummy electron emitting region, the first panel P ₁ effective area, are arranged generally in a two-dimensional matrix. In the first embodiment, the dummy electron emission region includes a plurality of dummy electron emission elements.

In the first embodiment, the gas trapping material forming the dummy gate electrode 113 and the gas trapping material forming the gate electrode 13 are the same gas trapping material, specifically, a zirconium-aluminum alloy ( Zr-Al
Alloy), the gate electrode 13 and the dummy gate electrode 1
13 has a single-layer structure.

On the other hand, FIG. 1 (second panel P in FIG. 64)
₂ ), a second panel P ₂ (also referred to as an anode panel) includes a substrate 20 and a phosphor layer 21 (phosphor layer 2) formed on the substrate 20 according to a predetermined pattern.
1R, 21G, 21B) and an anode electrode 23 formed over the entire surface of the phosphor layer 21.
Note that a black matrix 22 is formed on the substrate 20 between the phosphor layers 21. One pixel corresponds to the first panel P
An electron emission region (having a group of electron emission elements in which a predetermined number is arranged) in which the cathode electrode conductive material layer and the gate electrode constituent layer on _one side overlap, and a second surface facing the electron emission region.
It constituted by a phosphor layer 21 of the panel P ₂ side. In the effective area, such pixels are arranged in a two-dimensional matrix in the order of, for example, hundreds of thousands to millions.

When the potential difference ΔV between the gate electrode 13 and the cathode electrode 11 exceeds a certain threshold voltage V _th , the electron emission portion 1 is generated based on the electric field generated by the potential difference ΔV.
Electrons are emitted from the tip of No. 5 by the quantum tunnel effect. Further, when the potential difference ΔV _D between the dummy gate electrode 113 and the dummy cathode electrode 111 becomes equal to or higher than a certain threshold voltage V _th-D , the quantum from the tip of the dummy electron emission section 115 based on the electric field generated by the potential difference ΔV _D. Electrons are emitted by the tunnel effect.

In the first embodiment, a circuit for driving the display device is provided as shown in FIG.
(More specifically, the control circuit 30 is an electron emission unit driving circuit electrically connected to the cathode electrode 11), the dummy electron emission unit driving circuit 33 electrically connected to the dummy electron emission unit 115, and , A scanning circuit 31 which is a gate electrode driving circuit electrically connected to the gate electrode 13 and the dummy gate electrode 113. In the first embodiment, when at least one electron emission region in one row of electron emission regions is operated, part or all of the dummy electron emission regions near the one row of electron emission regions are operated. Specifically, all of the dummy electron emission regions included in one row of electron emission regions and adjacent to the electron emission regions are activated. In some cases, a part of the dummy electron emission region adjacent to the electron emission region may be operated.

In the display device of the first embodiment, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). More specifically, each of the gate electrodes 13 and the dummy gate electrode 113 is formed a stripe-shaped gate electrode structure layer, successively, we continue to apply a constant voltage V _G from the scanning circuit 31. On the other hand, the control circuit 30
From 0 ≦ [V _{C-MAX to} V _C
C-MIN] to apply a voltage of (<V _G). Thus, there a gate electrode constituting layer stripe which the voltage V _G is applied, the electron-emitting region where the respective cathode electrode conductive material layer to which the voltage V _C-MAX to V _C-MIN is applied overlap Te, when the _{(V G -V C-MIN)} , the potential difference ΔV is the maximum, the amount of electrons emitted from the electron-emitting region is maximized, and the electrons are attracted to the anode electrode 23, phosphor layer 2
Collide with 1. The anode electrode 23 has a gate electrode 1
A positive voltage higher than 3 is applied from the acceleration power supply 32. As a result, the emission luminance of the phosphor layer corresponding to such an electron emission region becomes the highest. On the other hand, when _{(V G -V C-MAX)} , the potential difference ΔV is minimized, is from the electron-emitting region is not electrons are emitted, the phosphor layer corresponding to such an electron-emitting region does not emit light. By applying a voltage of V _{C-MAX to} V _{C-MIN to} each of the conductive material layers for the cathode electrode, the emission luminance of the phosphor layer can be controlled.

On the other hand, a voltage of, for example, V _C-MIN is simultaneously applied to all of the stripe-shaped dummy cathode electrode conductive material layers constituting the dummy cathode electrode 111 from the dummy electron emission portion drive circuit 33. As a result, the voltage V _G
In all the dummy electron emission regions where the stripe-shaped gate electrode constituent layer to which the voltage V _C-MIN is applied and the respective dummy cathode electrode conductive material layers to which the voltage V _C-MIN is applied, the potential difference ΔV _D The maximum is reached, and electrons are emitted from all the dummy electron emission regions. That is, all the dummy electron emission regions included in one row of the electron emission regions and adjacent to the electron emission regions can be operated.

By the operation of the dummy electron emission region, electrons are emitted from the dummy electron emission element, and when such electrons collide with the dummy gate electrode 113, the dummy gate electrode 1
13 are activated, so that
The released gas can be reliably and stably captured by the gas capturing material.

The manufacturing method of the Spindt-type electron emitting portion and the dummy electron emitting portion will be described later.

FIGS. 6 and 7 show modified examples of the dummy gate electrode.

The dummy gate electrode shown in FIG.
Instead of a single-layer structure, it has a stacked structure of a first layer 113A made of a conductive material such as nickel (Ni) and a second layer 113B made of a gas trapping material. Note that the first layer 113A may be made of an insulating material such as a glass material, but in this case, the second layer 113B needs to have conductivity.

The dummy gate electrode shown in FIG.
A first material comprising a conductive material or a gas trapping material;
A layer 113A, a second layer 113B made of an insulating material,
It has a laminated structure with the third layer 113C (gas trapping layer) made of a gas trapping material.

The dummy gate electrode shown in FIG.
Although it has a laminated structure of a first layer 113A made of a conductive material and a second layer 113B made of a gas trapping material, unlike the dummy gate electrode shown in FIG. 6A, it is provided in the first layer. The size of the upper opening end of the opening 114 is smaller than the size of the lower opening end. When the electrons emitted from the dummy electron emission unit 115 enter the insulating layer 12 near the first layer 113A, gas may be emitted from that part of the insulating layer. By adopting such a structure,
Even if the electron path is distorted toward the inner wall side of the first layer 113A, the possibility that electrons enter the insulating layer 12 is reduced, and gas emission from the insulating layer 12 can be prevented.

The dummy gate electrode shown in FIG.
Although it has a laminated structure of a first layer 113A made of a conductive material and a second layer 113B made of a gas trapping material, unlike the dummy gate electrode shown in FIG. 6A, it is provided in the first layer. The opening 114 has a structure in which the size of the upper opening end is larger than the size of the lower opening end.

The dummy gate electrode shown in FIG.
Although it has a laminated structure of a first layer 113A made of a conductive material and a second layer 113B made of a gas trapping material, unlike the dummy gate electrode shown in FIG. 6A, it is provided in the first layer. The size of the upper opening end of the opening 114 is larger than the size of the lower opening end, and the side wall of the opening end of the first layer 113A is covered with the second layer 113B. With such a structure, all of the open end side walls of the opening 114 serving as a passage for electrons in the dummy gate electrode have
Even when electrons are incident on the side wall of the opening end, the gas is emitted from the dummy gate electrode because the electron incident portion is inevitably the gas trapping material even if the electrons enter the state of being covered by the second layer 113B made of the gas trapping material. It will not be done.

In the dummy gate electrodes shown in FIGS. 7A to 7C, by optimizing the etching conditions of the first layer 113A, the inclined first layer 113A is formed.
Can be obtained. Further, the structures of the various types of dummy gate electrodes described above can be applied to the gate electrode. Furthermore, the structures of the various types of dummy gate electrodes described above can be applied to various types of electron-emitting devices or dummy electron-emitting devices described below, or the following embodiments.

The dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the row direction (X direction), or may be provided at regular intervals. Alternatively, they may be provided between all the electron emission regions and the electron emission regions along the column direction (Y direction), or may be provided at a fixed interval.

(Embodiment 2) Embodiment 2 is a modification of the display device of Embodiment 1 and a display panel constituting such a display device. FIG. 8 shows a schematic layout of components of the display panel in the display device according to the second embodiment, and FIG. 9 shows an exploded perspective view of a part of the display device.

In the second embodiment, unlike the first embodiment, the electron-emitting portion (specifically, the cathode electrode 11)
And the stripe-shaped conductive material layer forming the dummy electron-emitting portion (specifically, the dummy cathode electrode 111) is common (that is, electrically and physically connected). And a stripe-shaped gate electrode forming layer on which the gate electrode 13 is formed and a stripe-shaped dummy gate electrode forming layer on which the dummy gate electrode 113 is formed are electrically and physically independent. The above configuration).

In the second embodiment, the circuit for driving the display device includes an electron emitting portion and a dummy electron emitting portion (specifically, a cathode electrode 11 and a dummy cathode electrode 111) as shown in FIG. Control circuit 3 which is an electron emission section / dummy electron emission section drive circuit electrically connected to
0, a scanning circuit 31 which is a gate electrode drive circuit electrically connected to the gate electrode 13, and a dummy gate electrode drive circuit 34 electrically connected to the dummy gate electrode 113. In the second embodiment, when at least one electron emission region in one row of electron emission regions is operated, part or all of the dummy electron emission regions near the one row of electron emission regions are operated. Specifically, a part of the dummy electron emission region adjacent to the electron emission region in one row is operated.

In the display device according to the second embodiment, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). Specifically, the scanning circuit 31 sequentially applies a constant voltage V _G to each of the gate electrode constituent layers.
Is applied. On the other hand, the control circuit 30 applies 0 ≦ [V _{C-MAX to} V _C-MIN ] (<V _G ) to each of the stripe-shaped conductive material layers for the cathode electrode constituting the cathode electrode 11.
Is applied. Thus, there a stripe-shaped gate electrode structure layer to which the voltage V _G is applied, the electron-emitting region where the electrically conductive material layer for each of the cathode electrode to which the voltage V _{C -MAX} to V _C-MIN is applied overlap Te is, (V _G -
In the case of (V _C-MIN ), the potential difference ΔV becomes maximum, the amount of electrons emitted from the electron emission region becomes maximum, and the electrons are attracted to the anode electrode 23 and collide with the phosphor layer 21.
As a result, the emission luminance of the phosphor layer corresponding to such an electron emission region becomes the highest. On the other hand, when _{(V G -V C-MAX)} ,
The potential difference ΔV becomes minimum, no electrons are emitted from the electron emission region, and the phosphor layer corresponding to the electron emission region does not emit light. V _C- is applied to each of the conductive material layers for the cathode electrode.
By applying a voltage of _{MAX to} V _C-MIN, the luminance of the phosphor layer can be controlled.

On the other hand, all or part of the stripe-shaped dummy gate electrode forming layer constituting the dummy gate electrode 113 from the dummy gate electrode drive circuit 34 (for example, both sides of the voltage-applied stripe-shaped gate electrode forming layer) In the stripe-shaped dummy gate electrode constituent layer located at
Alternatively, one side or stripe-shaped dummy gate electrode structure layer located on both sides of the electron emission regions of one row to be actuated later than the electron emission regions of one row to be actuated), at the same time, a voltage of V _G. Thus, a stripe-shaped dummy gate electrode constituting layer to which the voltage V _G is applied, the dummy electron emitting region where the respective cathode electrode conductive material layer to which the voltage V _C-MAX to V _C-MIN is applied overlap In this case, when the potential difference ΔV _D is equal to or _larger than the threshold voltage V _D-th , electrons are emitted from the dummy electron emission region. That is,
When operating at least one electron emission region in one row of electron emission regions, a part of the dummy electron emission region near the one row of electron emission regions is operated.

By the operation of the dummy electron emission region, electrons are emitted from the dummy electron emission element, and when the electrons collide with the dummy gate electrode 113, the dummy gate electrode 1
13 are activated, so that
The released gas can be reliably and stably captured by the gas capturing material.

Incidentally, the dummy electron emission region is arranged in the column and row direction (Y
Along the direction), may be provided between all the electron emission regions and the electron emission regions, or may be provided at a constant interval. In addition, (V _C-MAX + V
_When a voltage equal to or higher than _D-th ) is applied, when at least one electron emission region in one row of electron emission regions is activated, all of the dummy electron emission regions near the one row of electron emission regions are activated. be able to.

(Third Embodiment) The third embodiment is also a modification of the display device of the first embodiment and the display panel constituting the display device. FIG. 10 is a schematic layout diagram of components of the display panel in the display device according to the third embodiment.
Shown in

[0072] In the third embodiment, unlike the first embodiment, all of the gate electrode 13 constituting the first panel P ₁ of the display panel or flat panel display device and the dummy gate electrode 113 is shaped single flat (Sheet) having a single-layer structure made of a gas-trapping material, or a first layer made of a conductive or insulating material and a second layer (gas-trapping layer) made of a gas-trapping material (Electron emission section and dummy electron emission section are electrically and physically independent from each other (the above-described configuration).
And

That is, in the third embodiment, the cathode electrode 11 has, for example, a rectangular planar shape corresponding to the pixel. On the other hand, the dummy cathode electrode 111 also has, for example, a rectangular planar shape. Except that the shapes of the gate electrode and the dummy gate electrode and the shapes of the cathode electrode 11 and the dummy cathode electrode 111 are different, other structures can be the same as those in Embodiment 1,
Detailed description is omitted.

In the third embodiment, a circuit for driving the display device is provided as shown in FIG.
5 (more specifically, a control circuit 30 which is an electron emission unit driving circuit electrically connected to the cathode electrode 11); a dummy electron emission unit driving circuit 33 electrically connected to the dummy electron emission unit 115; In addition, a gate electrode / dummy gate electrode driving circuit (not shown) electrically connected to the gate electrode 13 and the dummy gate electrode 113 was formed. In the third embodiment, when operating at least one electron emission region in one row of electron emission regions, all dummy electron emission regions are operated.

The control circuit 30 is provided with a data circuit 130A.
And a scan circuit 130B. Each cathode electrode 11 is connected to a data circuit 130A via a switching element 130C composed of a MOS transistor. The gate of the MOS transistor is connected to the scan circuit 130B. The MOS transistor is, for example, an N-channel MOS transistor, and functions as a switching element that is turned on / off in accordance with a control signal applied from the scan circuit 130B and the data circuit 130A. Then, when the switching element 130C is turned on, a voltage is applied to the cathode electrode 11 connected to the switching element 130C according to a control signal applied from the scan circuit 130B and the data circuit 130A. The MOS transistor may be constituted by a P-channel type MOS transistor. Further, the MOS transistor may be replaced with another switching means having a switching function equivalent to that of the MOS transistor.

In the display device according to the third embodiment, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). More specifically, the electrode layers constituting the one plate-like gate electrodes 13 and the dummy gate electrode 113 is formed (sheet), keep applying a constant voltage V _G from the gate electrode driving circuit. On the other hand, when the desired switching element 130C is turned on by the control circuit 30, 0 ≦ [V
_C-MAX to V _C-MIN] to apply a voltage of (<V _G). Thereby, the gate electrode 13 to which the voltage V _G is applied, in the electron-emitting region made up of the respective cathode electrode 11 to which the voltage V _C-MAX to V _{C-MI N} is applied, (V
_G− V _C−MIN ), the potential difference ΔV becomes maximum, the amount of electrons emitted from the electron emission region becomes maximum, and the electrons are attracted to the anode electrode 23 and collide with the phosphor layer 21. As a result, the emission luminance of the phosphor layer corresponding to such an electron emission region becomes the highest. On the other hand, when _{(V G -V C-MAX)} , the potential difference ΔV is minimized, is from the electron-emitting region is not electrons are emitted, the phosphor layer corresponding to such an electron-emitting region does not emit light. By applying a voltage of V _{C-MAX to} V _{C-MIN to} each of the conductive material layers for the cathode electrode, the emission luminance of the phosphor layer can be controlled.

On the other hand, the dummy electron emitting portion driving circuit 33 simultaneously applies, for example,
_Apply a voltage of V _C-MIN . Thus, the dummy gate electrode 113 to which the voltage V _G is applied, the voltage V _C-MIN
Is applied to all the dummy electron emission regions where the dummy cathode electrode 111 overlaps, the potential difference ΔV _D becomes maximum, and electrons are emitted from all the dummy electron emission regions. That is, when operating at least one electron emission region in one row of electron emission regions, all dummy electron emission regions can be operated.

By the operation of the dummy electron emission region, electrons are emitted from the dummy electron emission element, and when such electrons collide with the dummy gate electrode 113, the dummy gate electrode 1
13 are activated, so that
The released gas can be reliably and stably captured by the gas capturing material.

The dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the row direction (X direction), or may be provided at regular intervals. Alternatively, the dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the column direction (Y direction), or may be provided at regular intervals. Further, similarly to the first embodiment, the dummy cathode electrode may be formed of a stripe-shaped conductive material layer for a dummy cathode electrode.

(Embodiment 4) Embodiment 4 is a modification of the display device of Embodiment 2 and a display panel constituting such a display device. FIG. 11 shows a schematic layout of components of the display panel in the display device according to the fourth embodiment.

[0081] In the fourth embodiment, unlike the second embodiment, some components of the first all the electron-emitting panel constituting the P ₁ and the dummy electron emitting portion of the display panel or flat panel display device (Specifically, a cathode electrode and a dummy cathode electrode) are formed from one plate-shaped (sheet) conductive material, and a stripe-shaped gate electrode constituent layer on which a gate electrode 13 is formed and a dummy gate electrode 1
A configuration (the above-described configuration) that is electrically and physically independent of the stripe-shaped dummy gate electrode forming layer on which 13 is formed.

That is, in the fourth embodiment, the gate electrode 13 has, for example, a rectangular planar shape corresponding to the pixel. On the other hand, the dummy gate electrode 113 has, for example, a rectangular planar shape. Except for differences in the shapes of the gate electrode 13 and the dummy gate electrode 113, and the shapes of the cathode electrode and the dummy cathode electrode, the other structures can be the same as those in Embodiment 1, and therefore detailed description is omitted.

In the fourth embodiment, as shown in FIG. 11, a circuit for driving a display device is electrically connected to an electron emitting portion and a dummy electron emitting portion (specifically, a cathode electrode and a dummy cathode electrode). Electron emission part /
Dummy electron emission section drive circuit (not shown), gate electrode 1
3 and a scanning circuit 31 which is a gate electrode driving circuit electrically connected to the dummy gate electrode 113, and a dummy gate electrode driving circuit 34 electrically connected to the dummy gate electrode 113. In the fourth embodiment, when operating at least one electron emission region in one row of electron emission regions, all dummy electron emission regions are operated.

The scanning circuit 31 includes a data circuit 131A and a scanning circuit 131B as in the third embodiment. The gate electrode 13 is connected to the data circuit 131A via a switching element 131C composed of a MOS transistor. The gate of the MOS transistor is connected to the scan circuit 131B. The MOS transistor is, for example, an N-channel M
An OS transistor, which functions as a switching element that is turned on / off in accordance with a scan signal applied from the scan circuit 131B and the data circuit 131A. When the switching element 131C is turned on, a voltage is applied to the gate electrode 13 connected to the switching element 131C according to a control signal applied from the scan circuit 131B and the data circuit 131A. The MOS transistor may be constituted by a P-channel type MOS transistor. Further, the MOS transistor may be replaced with another switching means having a switching function equivalent to that of the MOS transistor.

In the display device according to the fourth embodiment, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). Specifically, the cathode electrode 11
A constant voltage V _C is applied from the electron emission unit / dummy electron emission unit drive circuit to one flat (sheet) electrode configuration layer on which the dummy cathode electrode 111 is formed. On the other hand, a desired switching element 131 is
By making C conductive, a voltage of V _C <[VG _{-MAX to} VG _-MIN ] is applied to each of the gate electrodes 13. Thus, in the electron emission region composed of the cathode electrode 11 to which the voltage V _C is applied and the respective gate electrodes 13 to which the voltages V _{G -MAX to} VG _-MIN are applied, (V _{G- MAX−} V _C ), the potential difference ΔV becomes maximum, the amount of electrons emitted from the electron emission region becomes maximum, and the electrons are attracted to the anode electrode 23 and the phosphor layer 21
Collide with As a result, the emission luminance of the phosphor layer corresponding to such an electron emission region becomes the highest. On the other hand, (V _G-MIN −
At V _C ), the potential difference ΔV becomes minimum, no electrons are emitted from the electron emission region, and the phosphor layer corresponding to the electron emission region does not emit light. By applying a voltage of VG _{-MAX to} VG _{-MIN to} each of the gate electrodes 13, it is possible to control the emission luminance of the phosphor layer.

On the other hand, all the dummy gate electrodes 113 from the dummy gate electrode driving circuit
_Apply the voltage of _G-MAX . Accordingly, in all the dummy electron emission regions where the dummy cathode electrode to which the voltage V _C is applied and the dummy gate electrode 113 to which the voltage V _G-MAX is applied, the potential difference ΔV _D becomes maximum. , Electrons are emitted from all the dummy electron emission regions.
That is, when operating at least one electron emission region in one row of electron emission regions, all dummy electron emission regions can be operated.

When the dummy electron emission region is operated, electrons are emitted from the dummy electron emission element. When the electrons collide with the dummy gate electrode 113, the dummy gate electrode 1
13 are activated, so that
The released gas can be reliably and stably captured by the gas capturing material.

The dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the row direction (X direction), or may be provided at regular intervals. Alternatively, the dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the column direction (Y direction), or may be provided at regular intervals. Further, the dummy gate electrode may be formed of a stripe-shaped dummy gate electrode constituent layer as in the second embodiment.

(Embodiment 5) Embodiment 5 is a combination of the display devices of Embodiment 1 and Embodiment 2, and a display panel constituting such a display device. FIG. 12 shows a schematic layout of components of the display panel in the display device of the fifth embodiment.

In the fifth embodiment, the electron-emitting portion and the dummy electron-emitting portion are electrically and physically independent from each other, and the stripe-shaped gate electrode forming layer on which the gate electrode is formed and the dummy gate electrode are formed. The formed stripe-shaped dummy gate electrode forming layer was electrically and physically independent (the above-described structure). In Embodiment 5, as shown in FIG. 12, a circuit for driving the display device is connected to a control circuit 30 which is an electron emission portion driving circuit electrically connected to the electron emission portion and a gate electrode. Scanning circuit 3 which is a gate electrode driving circuit electrically connected
1. A dummy electron emission unit driving circuit 33 electrically connected to the dummy electron emission unit, and a dummy gate electrode driving circuit 34 electrically connected to the dummy gate electrode. With such a circuit configuration, the operation of the electron emission region and the operation of the dummy electron emission region can be controlled independently. Therefore, when operating at least one electron emission region in the electron emission region of one row, All of the dummy electron emission regions can be operated, or part or all of the dummy electron emission regions near the electron emission region in one row can be operated.

As shown in FIG. 5A, the Spindt-type electron-emitting device includes a support 10, a cathode electrode 11 formed on the support 10, and a cathode electrode 11 formed on the support 10 and the cathode electrode 11. On the formed insulating layer 12, the gate electrode 13 formed on the insulating layer 12, the opening 14 provided in the gate electrode 13 and the insulating layer 12, and the cathode electrode 11 located at the bottom of the opening 14. It is composed of the formed conical electron emission portion 15. 2, a stripe-shaped conductive material layer (a conductive material layer for a cathode electrode) constituting the cathode electrode 11 and a gate electrode 13 are formed.
Is a region in which projected images of these layers are formed in directions perpendicular to each other, and a region corresponding to a portion where the projected images of these striped layers overlap (one pixel). In the fifth embodiment, a plurality of electron-emitting devices are arranged. Further, such electron-emitting region, the first panel P ₁ effective area, are arranged generally in a two-dimensional matrix.

On the other hand, the Spindt-type dummy electron-emitting device includes a support 10, a dummy cathode electrode 111 formed on the support 10, and an insulating layer 12 formed on the support 10 and the dummy cathode electrode 111. A dummy gate electrode 113 formed on the insulating layer 12, an opening 114 provided in the dummy gate electrode 113 and the insulating layer 12,
Dummy cathode electrode 11 located at the bottom of opening 114
1 is formed of a conical dummy electron emitting portion 115 formed on the top surface of the dummy electron emitting portion 115. Then, the dummy gate electrode 113
It is formed on a stripe-shaped dummy gate electrode constituent layer, and the conductive material layer for the stripe-shaped dummy cathode electrode constituting the dummy cathode electrode 111 is formed such that the projected images of these layers are orthogonal to each other. A region corresponding to a portion where the projected images of these stripe-shaped layers overlap corresponds to a dummy electron emission region. Then, such a dummy electron emitting region, the first panel P ₁ effective area, for example, are arranged in a two-dimensional matrix. The dummy electron emission region is composed of a plurality of dummy electron emission elements. Note that the stripe-shaped dummy gate electrode constituent layer is formed between the stripe-shaped gate electrode constituent layer and the stripe-shaped gate electrode constituent layer. on the other hand,
The stripe-shaped dummy cathode electrode conductive material layer is formed between the stripe-shaped cathode electrode conductive material layer and the stripe-shaped cathode electrode conductive material layer.

In the display device of the fifth embodiment, the electron emission regions arranged in the row direction (X direction) are sequentially operated in the column direction (Y direction). More specifically, each of the stripe-shaped gate electrode structure layer gate electrode 13 is formed sequentially, continue to apply a constant voltage V _G from the scanning circuit 31. On the other hand, the control circuit 30 applies a voltage of 0 ≦ [V _{C-MAX to} V _C-MIN ] (<V _G ) to each of the stripe-shaped conductive material layers for the cathode electrode constituting the cathode electrode 11. Thus, there a gate electrode constituting layer stripe which the voltage V _G is applied, the electron-emitting region where the respective cathode electrode conductive material layer to which the voltage V _C-MAX to V _C-MIN is applied overlap Te, when the _{(V G -V C-MIN)} , the potential difference ΔV is the maximum, the amount of electrons emitted from the electron-emitting region is maximized, and the electrons are attracted to the anode electrode 23 and collide with phosphor layer 21 . As a result, the emission luminance of the phosphor layer corresponding to such an electron emission region becomes the highest. On the other hand, when _{(V G -V C-MAX)} , the potential difference ΔV is minimized, is from the electron-emitting region is not electrons are emitted, the phosphor layer corresponding to such an electron-emitting region does not emit light. V _{C-MAX to} V _C-MIN for each conductive material layer for cathode electrode
By applying this voltage, the emission luminance of the phosphor layer can be controlled.

On the other hand, the dummy electron emitting portion driving circuit 33 applies, for example, to each of the stripe-shaped conductive material layers for the dummy cathode electrode constituting the dummy cathode electrode 111 by, for example,
_Apply a voltage of V _{C- MIN} and drive the dummy gate electrode driving circuit 3
Each of the dummy gate electrode structure layer constituting the dummy gate electrode 113 from 4, for example, a voltage of V _G. Thus, in the a stripe-shaped dummy gate electrode constituting layer to which the voltage V _G is applied, the dummy electron emission region where the dummy cathode electrode conductive material layer to which the voltage V _C-MIN is applied overlap, the potential difference ΔV _D becomes maximum,
Electrons are emitted from the dummy electron emission region. In other words, depending on the voltage application method, when activating at least one electron emission region in one row of electron emission regions, all dummy electron emission regions can be activated, or 1
Part or all of the dummy electron emission region near the electron emission region in the row can be activated, and
Some or all of the dummy electron emission regions may be activated prior to the electron emission regions in the row.

The operation of the dummy electron emission region causes electrons to be emitted from the dummy electron emission element. When such electrons collide with the dummy gate electrode 113, the dummy gate electrode 1
13 are activated, so that
The released gas can be reliably and stably captured by the gas capturing material.

The dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the row direction (X direction), or may be provided at regular intervals. Alternatively, the dummy electron emission regions may be provided between all the electron emission regions and the electron emission regions along the column direction (Y direction), or may be provided at regular intervals.

The structure described in the fifth embodiment can be combined with the structure described in the first embodiment.
FIG. 13 shows a schematic layout of components of the display panel in the display device in this case. Alternatively, the configuration described in Embodiment 5 can be combined with the configuration described in Embodiment 2. FIG. 1 is a schematic layout diagram of the components of the display panel in the display device in this case.
It is shown in FIG. Further, the configuration described in the fifth embodiment is
The structure can be combined with the structure described in Embodiment Modes 1 and 2. FIG. 15 shows a schematic layout of components of the display panel in the display device in this case.

(Embodiment 6) In the following embodiments, an electron-emitting device, a dummy electron-emitting device having various structures and structures, and a method of manufacturing the same will be described. Of the first to the first embodiment
The present invention can be applied to the display panel, the flat display device, and the flat display device driving method described in Embodiment Mode 5. Further, the electron-emitting device and the dummy electron-emitting device
Since they can have substantially the same structure, an electron-emitting device will be described below exclusively, but the following description can also be applied to a dummy electron-emitting device.

The electron-emitting device having the first configuration can be classified into the following three categories. That is, the electron-emitting device having the first structure includes (a) a support, (b) a cathode electrode provided on the support, (c) an insulating layer formed on the substrate and the cathode electrode, D) a gate electrode provided on the insulating layer, (e) an opening penetrating through the gate electrode and the insulating layer, and (f) an electron emission provided on a portion of the cathode electrode located at the bottom of the opening. , And has a structure in which electrons are emitted from the electron emission portion exposed at the bottom of the opening. As such an electron-emitting device, the Spindt-type (an electron-emitting device in which a conical electron-emitting portion is provided on a portion of a cathode electrode located at the bottom of an opening) described above, a crown-type (a crown-shaped electron-emitting device). The emission portion is an electron emission element provided on a portion of the cathode electrode located at the bottom of the opening), and a flat type (an approximately flat electron emission portion is provided on the portion of the cathode electrode located at the bottom of the opening). Electron-emitting device).

The electron-emitting device of the second structure comprises (a) a support, (b) a cathode electrode provided on the support,
(C) an insulating layer formed on the substrate and the cathode electrode;
(D) a gate electrode provided on the insulating layer; and (e) an opening which penetrates the gate electrode and the insulating layer and has a cathode electrode exposed at the bottom, and a portion of the cathode electrode exposed at the bottom of the opening. Corresponds to an electron emission portion, and has a structure in which electrons are emitted from a portion of the cathode electrode exposed at the bottom of the opening. As such an electron-emitting device, a flat-type electron-emitting device that emits electrons from a flat cathode electrode surface,
A crater-type electron-emitting device that emits electrons from a projection on the surface of a cathode electrode having irregularities can be given.

The electron-emitting device having the third structure is formed on (a) a support, (b) a cathode electrode provided above the support and having an edge portion, and (c) at least on the cathode electrode. An insulating layer; (d) a gate electrode provided on the insulating layer; and (e) an opening portion penetrating at least the gate electrode and the insulating layer, and an edge portion of the cathode electrode exposed at a bottom or a side wall of the opening. Corresponds to an electron emission portion, and has a structure in which electrons are emitted from the edge of the cathode electrode exposed at the bottom or side wall of the opening. An electron-emitting device having such a structure is also called an edge-type electron-emitting device.

In the Spindt-type electron-emitting device, the materials constituting the electron-emitting portion include tungsten, tungsten alloy, molybdenum, molybdenum alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, and chromium. At least one material selected from the group consisting of alloys and silicon containing impurities (polysilicon or amorphous silicon) can be given. The electron-emitting portion of the Spindt-type electron-emitting device can be formed by, for example, an evaporation method, a sputtering method, or a CVD method.

In the crown-type electron-emitting device, as a material constituting the electron-emitting portion, conductive particles or
Combinations of conductive particles and a binder can be given.
As the conductive particles, carbon-based materials such as graphite; refractory metals such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), and chromium (Cr); or ITO ( And a transparent conductive material such as indium tin oxide. As the binder, for example, glass such as water glass or a general-purpose resin can be used. As general-purpose resin, vinyl chloride resin,
Examples thereof include thermoplastic resins such as polyolefin resins, polyamide resins, cellulose ester resins, and fluorine resins, and thermosetting resins such as epoxy resins, acrylic resins, and polyester resins. In order to improve the electron emission efficiency, it is preferable that the particle size of the conductive particles is sufficiently smaller than the size of the electron emission portion. The shape of the conductive particles is spherical, polyhedral, plate-like, needle-like, columnar, amorphous, etc.
Although not particularly limited, it is preferable that the conductive particles have such a shape that the exposed portions of the conductive particles can be sharp projections. Conductive particles having different sizes and shapes may be mixed and used. The electron-emitting portion of the crown-type electron-emitting device can be formed by, for example, a coating method, an evaporation method, or a sputtering method in combination with a lift-off method.

In the flat type electron-emitting device, the material forming the electron-emitting portion is preferably made of a material having a smaller work function Φ than the material forming the cathode electrode, and any material is selected. This may be determined based on the work function of the material constituting the cathode electrode, the potential difference between the gate electrode and the cathode electrode, the required magnitude of the emitted electron current density, and the like. Representative materials constituting the cathode electrode of the electron-emitting device include tungsten (Φ = 4.55 eV) and niobium (Φ = 4.02 to 4.8).
7eV), molybdenum (Φ = 4.53-4.95e)
V), aluminum (Φ = 4.28 eV), copper (Φ =
4.6 eV), tantalum (Φ = 4.3 eV), chromium (Φ = 4.5 eV), and silicon (Φ = 4.9 eV). The electron emitting portion preferably has a work function Φ smaller than these materials, and its value is preferably approximately 3 eV or less. As such materials, carbon (Φ <1 eV), cesium (Φ = 2.14)
eV), LaB ₆ (Φ = 2.66 to 2.76 eV), B
aO (Φ = 1.6 to 2.7 eV), SrO (Φ = 1.2
5 to 1.6 eV), Y ₂ O ₃ (Φ = 2.0 eV), CaO
(Φ = 1.6-1.86 eV), BaS (Φ = 2.05
eV), TiN (Φ = 2.92 eV), ZrN (Φ =
(2.92 eV). It is more preferable that the electron emission portion is made of a material having a work function Φ of 2 eV or less. The material constituting the electron emitting portion is as follows.
It is not necessary to have conductivity.

As a particularly preferable constituent material of the electron-emitting portion, carbon, more specifically, diamond, especially amorphous diamond can be mentioned. When the electron emission portion is made of amorphous diamond, 5 × 1
At 0 ⁷ V / m or less of the electric field strength, can be obtained current density of emitted electrons required for a flat-panel display. In addition, since amorphous diamond is an electric resistor, the emission electron current obtained from each electron emission portion can be made uniform, and therefore, it is possible to suppress luminance variation when the diamond is incorporated in a flat display device. . Furthermore, since amorphous diamond has extremely high resistance to sputtering by ions of residual gas in the flat display device,
The life of the electron-emitting device can be extended.

Alternatively, a material constituting the electron emission portion is appropriately selected from materials in which the secondary electron gain δ of such a material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. Is also good. That is, silver (Ag),
Aluminum (Al), gold (Au), cobalt (C
o), copper (Cu), molybdenum (Mo), niobium (N
b), nickel (Ni), platinum (Pt), tantalum (T
a), metals such as tungsten (W) and zirconium (Zr); semiconductors such as silicon (Si) and germanium (Ge); inorganic simple substances such as carbon and diamond; and aluminum oxide (Al ₂ O ₃ ) and barium oxide ( BaO), beryllium oxide (BeO), calcium oxide (CaO), magnesium oxide (MgO), tin oxide (SnO ₂ ), barium fluoride (BaF ₂ ), calcium fluoride (CaF ₂ )
And the like can be appropriately selected. still,
The material forming the electron emitting portion does not necessarily need to have conductivity.

In the case of an electron-emitting device having the second structure (a planar electron-emitting device or a crater-type electron-emitting device) or an electron-emitting device having the third structure (an edge-type electron-emitting device), As materials constituting the cathode electrode corresponding to the portion, tungsten (W), tantalum (Ta), niobium (Nb), titanium (Ti), molybdenum (Mo), chromium (Cr), aluminum (A)
l), metals such as copper (Cu), gold (Au), silver (Ag),
Alternatively, examples thereof include alloys and compounds thereof (for example, nitrides such as TiN, and silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , and TaSi ₂ ), semiconductors such as diamond, and carbon thin films. The thickness of such a cathode electrode is approximately 0.05 to 0.5 μm, preferably 0.1 to 0.5 μm.
It is desirable that the thickness be in the range of 1 to 0.3 μm, but it is not limited to such a range. Examples of the method for forming the cathode electrode include a vapor deposition method such as an electron beam vapor deposition method and a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, and a plating method. . According to the screen printing method or the plating method, it is possible to directly form a striped cathode electrode.

Alternatively, the light emitting device may be composed of a second structure (a flat-type electron-emitting device or a crater-type electron-emitting device), an electron-emitting device having a third structure (an edge-type electron-emitting device), or a flat-type electron-emitting device. In the electron-emitting device having the first structure, the cathode electrode (or the conductive material layer for the cathode electrode) and the electron-emitting portion can be formed using a conductive paste in which conductive fine particles are dispersed. As the conductive fine particles, graphite powder; graphite powder obtained by mixing at least one of barium oxide powder, strontium oxide powder, and metal powder; nitrogen, phosphorus,
Diamond particles or diamond-like carbon powder containing impurities such as boron and triazole;
Nano tube powder; (Sr, Ba, Ca) CO ₃ powder; silicon carbide powder. In particular, it is preferable to select graphite powder as the conductive fine particles from the viewpoint of reduction of the threshold electric field and durability of the electron emitting portion. The shape of the conductive fine particles can be any of a regular shape and an irregular shape in addition to the spherical shape and the scale shape. The particle size of the conductive fine particles may be equal to or less than the thickness and pattern width of the cathode electrode and the electron emission portion. The smaller the particle size, the more the number of emitted electrons per unit area can be increased. However, if the particle size is too small, the conductivity of the cathode electrode and the electron emitting portion may be deteriorated. Therefore, the preferable range of the particle size is approximately 0.01 to 4.0 μm. Such conductive fine particles are mixed with a glass component or other suitable binder to prepare a conductive paste, a desired pattern is formed by a screen printing method using the conductive paste, and then the pattern is fired to emit electrons. A cathode electrode and an electron-emitting portion functioning as a portion can be formed. Alternatively, a cathode electrode or an electron emitting portion functioning as an electron emitting portion can be formed by a combination of a spin coating method and an etching technique.

In the electron-emitting device having the first structure including the Spindt-type electron-emitting device and the crown-type electron-emitting device, the material constituting the cathode electrode (or the cathode electrode conductive material layer) is tungsten. (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), chromium (Cr), aluminum (Al),
Metals such as copper (Cu), alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ , M
OSI _2, TiSi _2, TaSi silicides _2, etc.), semiconductors such as silicon (Si), ITO (indium tin oxide) can be exemplified. Examples of the method for forming the cathode electrode include a vapor deposition method such as an electron beam vapor deposition method and a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, and a plating method. . According to the screen printing method or the plating method, it is possible to directly form a striped cathode electrode.

In the electron-emitting device having the first to third structures, the plane shape of the opening (shape when the opening is cut by a virtual plane parallel to the substrate surface) is circular, elliptical, or rectangular. , A polygon, a rounded rectangle, a rounded polygon, and the like. The opening can be formed by, for example, isotropic etching, or a combination of anisotropic etching and isotropic etching. In addition, as the constituent material of the insulating layer, SiO ₂ , SiN, Si
ON and SOG (spin-on-glass) can be used alone or in appropriate combination. Known processes such as a CVD method, a coating method, a sputtering method, and a screen printing method can be used for forming the insulating layer. Note that the insulating layer may be formed in a partition shape. In this case, the partition-like insulating layer is formed in a region between adjacent stripe-like cathode electrodes,
Alternatively, when a plurality of cathode electrodes constitute a group of cathode electrodes, they may be formed in a region between adjacent cathode electrode groups. As a material for forming the partition-like insulating layer, a conventionally known insulating material can be used. For example, a material in which a metal oxide such as alumina is mixed with widely used low-melting glass can be used. As a method for forming the partition-like insulating layer, a screen printing method, a sand blast method, a dry film method, and a photosensitive method can be exemplified. Dry film method is to laminate the photosensitive film on the substrate, remove the photosensitive film at the part where the partition-like insulating layer is to be formed by exposure and development, and embed the insulating layer material in the opening created by the removal. And firing. The photosensitive film is burned and removed by baking, so that the insulating layer material for forming the partition embedded in the opening remains, forming a partition-shaped insulating layer. The photosensitive method is a method in which an insulating layer material for forming a partition having photosensitivity is formed on a substrate, and the insulating layer material is patterned by exposure and development, followed by baking.

In the electron-emitting devices having the first to third structures, one electron-emitting portion may be present in one opening provided in the gate electrode and the insulating layer, A plurality of electron-emitting portions may be present in one opening provided in the layer, or a plurality of openings may be provided in the gate electrode, and one opening communicating with the opening may be provided in the insulating layer. 1 in one opening in the layer
Alternatively, a plurality of electron emitting portions may be present.

In the electron-emitting device having the first to third structures, a resistor layer may be provided between the cathode electrode and the electron-emitting portion. Alternatively, when the surface of the cathode electrode or its edge portion corresponds to the electron emission portion, the cathode electrode may have a three-layer structure of a conductive material layer, a resistor layer, and an electron emission layer corresponding to the electron emission portion. Providing a resistor layer stabilizes the operation of the electron-emitting device,
Electron emission characteristics can be made uniform. Examples of the material constituting the resistor layer include a carbon-based material such as silicon carbide (SiC), a semiconductor material such as SiN and amorphous silicon, and a high-melting metal oxide such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride. be able to. Examples of the method for forming the resistor layer include a sputtering method, a CVD method, and a screen printing method. The resistance value may be approximately 1 × 10 ⁵ to 1 × 10 ⁷ Ω, preferably several MΩ.

As conductive materials constituting the gate electrode in various electron-emitting devices, tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo),
Metals such as chromium (Cr), aluminum (Al), copper (Cu), alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ , MoSi ₂ , T
i Si _2, silicides such as TaSi _2), or silicon (Si) or the like of the semiconductor and diamond, carbon, IT
O (indium tin oxide) can be exemplified.

Hereinafter, various electron-emitting devices and a method for manufacturing the same will be described.

[Electron-Emitting Element-1: Spindt-Type Electron-Emitting Element] The structure of the Spindt-type electron-emitting element is described in Embodiment 1.
As described in the above. The manufacturing method of the Spindt-type electron-emitting device is basically a method in which the conical electron-emitting portion 15 is formed by vertical vapor deposition of a metal material. That is, the vapor deposition particles enter the opening 14 perpendicularly, but the vapor deposition particles reach the bottom of the opening 14 by utilizing the shielding effect of the overhang-like deposit formed near the opening 14. Is gradually reduced, so that the electron-emitting portion 15 which is a conical deposit is formed in a self-aligned manner. Hereinafter, in order to facilitate removal of unnecessary overhang-like deposits, an electron having a first configuration of a Spindt-type electron-emitting device based on a method in which a peeling layer 18 is formed on a gate electrode 13 in advance. An outline of a method of manufacturing a flat display device having an emission element will be described with reference to FIGS. 16 and 17 which are schematic partial end views of a support and the like.

[Step-100] First, a cathode electrode 11 composed of a striped conductive material layer for a cathode electrode composed of niobium (Nb) is formed on a support 10 composed of, for example, glass, and then SiO ₂ is formed on the entire surface. An insulating layer 12 made of a zirconium-aluminum alloy (Zr-Al alloy), which is a gas trapping material, and a gate electrode 1 made of a stripe-shaped gate electrode forming layer.
3 is formed on the insulating layer 12. Note that the same can be applied to the gas trapping material forming the gate electrode in various electron-emitting devices described below. The formation of the gate electrode 13 can be performed based on, for example, a sputtering method, a lithography technique, and a dry etching technique. Next, an opening 14 is formed in the gate electrode 13 and the insulating layer 12 by RIE (Reactive Ion Etching), and the cathode electrode 11 is exposed at the bottom of the opening 14 (see FIG. 16A). . In addition, the cathode electrode 11 may be a single material layer, or may be configured by laminating a plurality of material layers. For example, the surface layer of the cathode electrode 11 can be made of a material having a higher electrical resistivity than the remaining portion in order to cover the variation in the electron emission characteristics of each electron emission portion formed in a later step.

[Step-110] Next, the electron-emitting portion 15 is formed on the cathode electrode 11 exposed at the bottom of the opening. Specifically, the release layer 18 is formed by obliquely depositing aluminum. At this time, the support 10
By selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal line, the release layer 18 can be formed on the gate electrode 13 and the insulating layer 12 with almost no aluminum deposited on the bottom of the opening 14. . This release layer 18
Protrudes like an eaves from the opening end of the opening 14,
This substantially reduces the diameter of the opening 14 (see FIG. 16B).

[Step-120] Next, for example, molybdenum (Mo) is vertically deposited on the entire surface. At this time, as shown in FIG. 17A, as the conductor layer 19 made of molybdenum having an overhang shape grows on the release layer 18, the substantial diameter of the opening 14 is gradually reduced. Therefore, vapor deposition particles contributing to deposition at the bottom of the opening 14 are gradually limited to those passing near the center of the opening 14. As a result, a conical deposit is formed at the bottom of the opening 14, and the conical deposit made of molybdenum becomes the electron emission portion 15.

Thereafter, the release layer 18 is formed on the insulating layer 12 and the gate electrode 1 by an electrochemical process and a wet process.
3 and the conductive layer 19 above the insulating layer 12 and the gate electrode 13 is selectively removed. As a result, as shown in FIG. 17B, a conical electron emitting portion 15 can be left on the cathode electrode 11 located at the bottom of the opening 14.

[0120] When the [Step-130] according electron-emitting devices combine (or display panel cathode panel) the first panel which is formed a number P ₁ and the second panel (anode panel) P _2, the flat display device Obtainable.
Specifically, for example, a frame 24 made of ceramics or glass and having a height of about 1 mm is prepared, and the frame 24 and the first
Panel P ₁ and bonded using the second panel P ₂ and the example frit glass, dried frit glass, about 4
What is necessary is just to bake at 50 degreeC for 10 to 30 minutes. Next, the inside of the flat display device is evacuated to a degree of vacuum of about 10 ⁻⁴ Pa, and then a heat treatment is performed to activate the gas trapping material. Thereafter, the tip tube 17 is sealed by an appropriate method. Alternatively, for example, it may be bonded to the frame 24 the first panel P ₁ and the second panel P ₂ in a high vacuum atmosphere. Alternatively, depending on the structure of the flat-panel display, without the frame, it may be bonded first panel P ₁ and the second panel P _2.

[0121] One example of a second panel manufacturing method of the P _2, will be described with reference to FIG. 18. First, a luminescent crystal particle composition is prepared. For this purpose, for example, a dispersant is dispersed in pure water, and the mixture is stirred for 1 minute at 3000 rpm using a homomixer. Next, the luminescent crystal particles described above are put into pure water in which a dispersant is dispersed, and the mixture is stirred at 5,000 rpm for 5 minutes using a homomixer. Thereafter, for example, polyvinyl alcohol and ammonium bichromate are added, sufficiently stirred, and filtered.

In manufacturing the display panel, a photosensitive film 40 is formed (applied) on the entire surface of the substrate 20 made of, for example, glass. Then, the photosensitive film 40 formed on the substrate 20 is exposed to exposure light emitted from an exposure light source (not shown) and passed through a hole 44 provided in the mask 43 to form a photosensitive region 41. (See FIG. 18A). Thereafter, the photosensitive film 40 is developed and selectively removed, and the remaining photosensitive film (photosensitive film after exposure and development) 4
2 are left on the substrate 20 (see FIG. 18B). next,
After applying a carbon agent (carbon slurry) to the entire surface, drying and baking, the remaining portion 4 of the photosensitive film is formed by a lift-off method.
By removing the carbon material 2 and the carbon material thereon, a black matrix 22 made of the carbon material is formed on the exposed substrate 20, and at the same time, the remaining portion 42 of the photosensitive film is removed (FIG. 18C). reference). Thereafter, red, green, and blue phosphor layers 21 are formed on the exposed substrate 20 (see FIG. 18D). Specifically, a luminescent crystal particle composition prepared from each of the luminescent crystal particles (phosphor particles) described above is used. For example, a red photosensitive luminescent crystal particle composition (phosphor slurry) is used. Apply to the entire surface, expose,
Develop, then apply a green photosensitive luminescent crystal particle composition (phosphor slurry) over the entire surface, expose and develop, and further, blue photosensitive luminescent crystal particle composition (phosphor slurry) May be applied to the entire surface, exposed and developed. Thereafter, an anode electrode 23 made of an aluminum thin film having a thickness of about 0.07 μm is formed on the phosphor layer 21 and the black matrix 22 by a sputtering method. Note that the respective phosphor layers 21 can also be formed by a screen printing method or the like.

In the flat display device, the first panel P ₁
When the case of joining the second panel P ₂ and the peripheral portion of the junction is used in combination with or may be performed using an adhesive layer, or a frame body 24 made of an insulating rigid material as glass or ceramic adhesive layer May go. When the frame 24 and the adhesive layer are used together, the height of the frame 24 is appropriately selected, so that the first panel P ₁ can be compared with the case where only the adhesive layer is used.
If it is possible to set longer the opposing distance between the second panel P _2. In addition, as a constituent material of the adhesive layer, frit glass is generally used, but the melting point is 120 to 400.
A so-called low melting point metal material of about ゜ C may be used. As such a low melting point metal material, In (indium: melting point 15
7 ° C); indium-gold based low melting point alloy; Sn ₈₀ Ag
₂₀ (melting point 220-370 ° C), Sn ₉₅ Cu ₅ (melting point 2
27-370 ° C.) Tin (Sn) based high temperature solder; Pb
Lead (Pb) -based high-temperature solder such as _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304-365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.); Zn ₉₅ A
l ₅ (melting point 380 ° C) zinc such as (Zn) based high-temperature solder; Sn ₅ Pb ₉₅ (melting point 300-314 ° C), Sn ₂ P
b- ₉₈ (melting point: 316 to 322 ° C.) tin-lead-based standard solder; brazing material such as Au ₈₈ Ga ₁₂ (melting point: 381 ° C.) (all the above suffixes represent atomic%). .

In the flat panel display, the first panel P ₁
When the case of joining the tripartite second panel P ₂ and the frame 24, may be simultaneously joined the three parties, or either one of the first panel P ₁ and the second panel P ₂ in the first stage And frame 2
4 joining the may be joined to the other and the frame 24 of the first panel P ₁ and the second panel P ₂ in the second stage. By performing the bonding of the three members or bonding at the second stage in a high vacuum atmosphere, the first panel P ₁ and the space surrounded by the adhesive layer and the second panel P ₂ and the frame 24, and simultaneously the vacuum and bonding Become. Alternatively, it is also possible after joining the end of the three parties, the space surrounded by the first panel P ₁ and the adhesive layer and the second panel P ₂ and the frame 24, and vacuum. When evacuation is performed after the bonding, the pressure of the atmosphere during the bonding may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be air, nitrogen gas or Group 0 of the periodic table. May be an inert gas containing a gas belonging to (for example, Ar gas).

In the case of performing the exhaust after the joining, the exhaust can be performed through the tip tube 17 previously connected to the first panel P ₁ and / or the second panel P ₂ . The tip tube 17
The first panel P ₁ is typically constructed using a glass tube.
And / or around the second panel P through hole 16 provided in the ineffective region of _2, with a frit glass or the above low-melting-point metal material, after the space reaches a predetermined vacuum degree, heat Sealed off by wearing. In addition, if the entire flat display device is once heated and then cooled before sealing is performed, the residual gas can be released into the space, and the residual gas can be removed to the outside of the space by exhaustion. It is suitable.

[Electron-Emitting Element-2: Crown-Type Electron-Emitting Element] FIG. 21A is a schematic partial end view of an electron-emitting element having a first structure composed of a crown-type electron-emitting element. FIG. 2 is a schematic perspective view with a part cut away.
1 (B). The crown type electron-emitting device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, Gate electrode 1
3 and the opening 14 penetrating the insulating layer 12;
And a crown-shaped electron emission portion 15A provided on the portion of the cathode electrode 11 located at the bottom of the cathode electrode 11.

The method of manufacturing the crown-type electron-emitting device will now be described with reference to FIGS.
This will be described with reference to FIG.

[Step-200] First, for example, from glass
The cathode electrode for stripes is placed on the support 10
The cathode electrode 11 composed of the electric material layer is formed.
The cathode electrode 11 extends in the left-right direction of the drawing.
I have. An example of a conductive material layer for a striped cathode electrode is
For example, an ITO film is formed on the support 10 by a sputtering method.
After forming a film over the entire surface to a thickness of about 0.2 μm, ITO
Can be formed by patterning the film
You. The cathode electrode 11 may be a single material layer.
Be constructed by stacking multiple material layers
Can also. For example, each electron-emitting portion formed in a later process
To cover variations in the electron emission characteristics of
Material having a higher electrical resistivity than the rest of the surface layer of the gate electrode 11
Can be configured. Next, over the entire surface, specifically,
Forming insulating layer 12 on support 10 and cathode electrode 11
I do. Here, as an example, a glass paste is applied
Screen print to a thickness of 3 μm. Next, the insulating layer 12
To remove the moisture and the solvent contained in the
For tanning, for example, calcining at 100 ° C for 10 minutes
2 steps such as firing and final firing at 500 ° C for 20 minutes
Is fired. In addition, using the above-mentioned glass paste
Instead of screen printing, for example, plasma CVD
More SiO _TwoA film may be formed.

Next, a gate electrode 13 composed of a stripe-shaped gate electrode forming layer is formed on the insulating layer 12 (see FIG. 19A). The gate electrode 13 extends in a direction perpendicular to the plane of the drawing. The gas trapping material forming the gate electrode 13 can be the same as that of the Spindt-type electron-emitting device described above. The direction in which the projected image of the gate electrode 13 extends is 90 degrees with the direction in which the projected image of the striped cathode electrode 11 extends.

[Step-210] Next, the gate electrode 13 and the insulating layer 12 are etched by an RIE method using an etching mask made of, for example, a photoresist material, and an opening 14 is formed in the gate electrode 13 and the insulating layer 12. Then, the cathode electrode 11 is exposed at the bottom of the opening 14 (see FIG. 19B). The diameter of the opening 14 is about 2 to 5
0 μm.

[Step-220] Next, the etching mask is removed, and a peeling layer 51 is formed on the gate electrode 13, the insulating layer 12, and the side wall surface of the opening 14 (FIG. 20A). reference). In order to form the release layer 51, for example, a photoresist material is applied to the entire surface by a spin coating method, and patterning is performed such that only a part of the bottom of the opening 14 is removed. At this point, the opening 14
Is reduced to about 1-20 μm.

[Step-230] Next, as shown in FIG. 20B, a conductive composition layer 52 made of a composition material is formed on the entire surface. The composition raw material used here contains, for example, 60% by weight of graphite particles having an average particle size of about 0.1 μm as conductive particles, and 40% by weight of No. 4 water glass as a binder. This composition raw material is, for example, 1400 rpm,
Spin coating is performed on the entire surface for 10 seconds. Opening 14
The inside of the conductive composition layer 52 rises along the side wall surface of the opening 14 due to the surface tension of the composition raw material, and becomes concave toward the center of the opening 14. afterwards,
Preliminary baking for removing moisture contained in the conductive composition layer 52 is performed, for example, in the air at 400 ° C. for 30 minutes.

In the composition raw materials, the binder is (1)
It may itself be a dispersion medium of conductive particles,
(2) The conductive particles may be coated, or (3) a dispersion medium of the conductive particles may be formed by being dispersed or dissolved in an appropriate solvent. A typical example of the case (3) is water glass, which is a Japanese Industrial Standard (JIS) K140.
Nos. 1 to 4 specified in No. 8 or equivalents thereof can be used. Nos. 1 to 4 are four-grade grades based on the difference in the number of moles (about 2 to 4 moles) of silicon oxide (SiO ₂ ) with respect to 1 mole of sodium oxide (Na ₂ O) as a constituent of water glass. , Each greatly differ in viscosity. Therefore, when water glass is used in the lift-off process, various conditions such as the type and content of the conductive particles dispersed in the water glass, affinity with the release layer 51, and the aspect ratio of the opening 14 are taken into consideration. It is preferred to select the optimal grade of water glass or to prepare and use water glass equivalent to these grades.

Since the binder is generally inferior in conductivity, if the content of the binder is too large relative to the content of the conductive particles in the conductive composition, the electric resistance of the electron emitting portion 15A formed will increase. In addition, there is a possibility that electron emission may not be performed smoothly. Therefore, for example, in the case of a composition raw material obtained by dispersing carbon-based material particles as conductive particles in water glass, for example, the ratio of the carbon-based material particles to the total weight of the composition raw material is determined by the ratio of the electron-emitting portion 15A. It is preferable to select approximately 30 to 95% by weight in consideration of characteristics such as the electric resistance value, the viscosity of the composition raw material, and the adhesion between the conductive particles.
By selecting the ratio of the carbon-based material particles within such a range, it is possible to sufficiently lower the electric resistance value of the formed electron-emitting portion 15A and to maintain good adhesion between the carbon-based material particles. . However, when the alumina particles are mixed with the carbon-based material particles as the conductive particles, the adhesiveness between the conductive particles tends to decrease. Therefore, the carbon-based material particles may be adjusted according to the content of the alumina particles. Is preferably increased, and particularly preferably 60% by weight or more. The composition raw material may contain a dispersant for stabilizing the dispersed state of the conductive particles, and additives such as a pH adjuster, a drying agent, a curing agent, and a preservative. A composition raw material obtained by dispersing a powder in which conductive particles are covered with a coating of a binder (binder) in an appropriate dispersion medium may be used.

As an example, when the diameter of the crown-shaped electron emitting portion 15A is approximately 1 to 20 μm and carbon-based material particles are used as the conductive particles, the particle diameter of the carbon-based material particles is approximately 0.1 μm to 1 μm. It is preferable to set the range. By selecting the particle size of the carbon-based material particles in such a range, the edge of the crown-shaped electron emitting portion 15A has sufficiently high mechanical strength, and the adhesion of the electron emitting portion 15A to the cathode electrode 11 is improved. It will be good.

[Step-240] Next, as shown in FIG. 20C, the release layer 51 is removed. Peeling 2% by weight
In sodium hydroxide aqueous solution for 30 seconds. At this time, the peeling may be performed while applying ultrasonic vibration. Thereby, together with the release layer 51, the release layer 5
1 is removed, and the opening 1
Only the portion of the conductive composition layer 52 on the cathode electrode 11 exposed at the bottom of 4 is left. This remaining portion becomes the electron emitting portion 15A. The shape of the electron-emitting portion 15A is such that its surface is depressed toward the center of the opening 14 and has a crown shape.
FIG. 2 shows the state at the end of [Step-240].
It is shown in FIG. FIG. 21B is a schematic perspective view showing a part of the electron-emitting device, and FIG. 21A is a schematic part along the line AA in FIG. It is an end elevation.
In FIG. 21B, a part of the insulating layer 12 and a part of the gate electrode 13 are cut away so that the entire electron emitting portion 15A can be seen. In one electron emission region (overlap region),
It is sufficient to provide about 5 to 100 electron emitting portions 15A. Note that the binder exposed on the surface of the electron emitting portion 15A may be removed by etching so that the particle size of the conductive particles is reliably exposed on the surface of the electron emitting portion 15A.

[Step-250] Next, the electron-emitting portion 15A
Is fired. Baking is performed in dry air at 400 ° C., 30
Perform under the condition of minutes. In addition, what is necessary is just to select a baking temperature according to the kind of binder contained in a composition raw material. For example,
When the binder is an inorganic material such as water glass,
The heat treatment may be performed at a temperature at which the inorganic material can be fired. When the binder is a thermosetting resin, the heat treatment may be performed at a temperature at which the thermosetting resin can be cured. However, in order to maintain the adhesion between the conductive particles, it is preferable to perform the heat treatment at a temperature at which the thermosetting resin does not excessively decompose or carbonize. Regardless of which binder is used, the heat treatment temperature needs to be a temperature at which no damage or defects occur in the gate electrode, the cathode electrode, and the insulating layer. The heat treatment atmosphere is preferably an inert gas atmosphere so that the electrical resistivity of the gate electrode or the cathode electrode does not increase due to oxidation or a defect or damage does not occur in the gate electrode or the cathode electrode. When a thermoplastic resin is used as a binder, heat treatment may not be required.

[Electron-Emitting Element-3: Flat Electron-Emitting Element] FIG. 22C is a schematic partial cross-sectional view of an electron-emitting element having the first structure composed of a flat-type electron-emitting element. . The flat-type electron-emitting device includes a cathode electrode 11 formed on a support 10 made of, for example, glass, and a support 10.
And an insulating layer 12 formed on the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, a gate electrode 13
And an opening 14 penetrating through the insulating layer 12, and a flat electron emission portion 15B provided on a portion of the cathode electrode 11 located at the bottom of the opening 14. Here, the electron-emitting portion 15B is formed on the striped cathode electrode 11 extending in the direction perpendicular to the paper surface of FIG. The gate electrode 13 extends in the left-right direction on the paper of FIG. The cathode electrode 11 and the gate electrode 13 are made of chromium (Cr). The electron emission unit 15B
Specifically, it is composed of a thin layer made of graphite powder. In addition, a resistor layer 60 made of SiC is provided between the cathode electrode 11 and the electron-emitting portion 15B for stabilizing the operation of the electron-emitting device and making the electron-emitting characteristics uniform. In the flat-type electron-emitting device shown in FIG. 22C, the resistor layer 60 and the electron-emitting portion 15B are formed over the entire surface of the cathode electrode 11.
The structure is not limited to such a structure. In short, it is only necessary that the electron-emitting portion 15 </ b> B is provided at least at the bottom of the opening 14.

Hereinafter, a method of manufacturing a flat type electron-emitting device will be described with reference to FIG. 22, which is a schematic partial cross-sectional view of a support and the like.

[Step-300] First, on the support 10,
After a cathode electrode conductive material layer made of chromium (Cr) is formed by a sputtering method, the cathode electrode conductive material layer is patterned based on a lithography technique and a dry etching technique. Thus, the cathode electrode 11 composed of the stripe-shaped conductive material layer for the cathode electrode can be formed on the support 10 (FIG. 22A).
reference). The cathode electrode 11 extends in a direction perpendicular to the plane of the paper of FIG.

[Step-310] Next, the cathode electrode 11
An electron emitting portion 15B is formed on the upper portion. Specifically, first, the entire surface of the resistor layer 60 made of SiC is formed by sputtering.
Is formed, and then the electron emitting portion 15B made of graphite powder paint is formed on the resistor layer 60 by spin coating, and the electron emitting portion 15B is dried. Thereafter, the electron-emitting portion 15B and the resistor layer 60 are patterned according to a known method (see FIG. 22B). Electrons are emitted from the electron emitting portion 15B.

[Step-320] Next, the insulating layer 12 is formed on the entire surface.
To form Specifically, the insulating layer 12 made of SiO ₂ is formed on the electron-emitting portion 15B and the support 10 by, for example, a sputtering method. The insulating layer 12 can be formed based on a method of screen printing a glass paste or a method of forming a SiO ₂ layer by a CVD method. Thereafter, a gate electrode 13 composed of a stripe-shaped gate electrode constituent layer is formed on the insulating layer 12.

[Step-330] Next, an opening 14 is formed in the gate electrode 13 and the insulating layer 12, and the electron-emitting portion 15B is exposed at the bottom of the opening 14. Thereafter, a heat treatment is performed at 400 ° C. for 30 minutes in order to remove the etching mask and remove the organic solvent in the electron-emitting portion 15B. Thus, the electron-emitting device shown in FIG. 22C can be obtained.

[Electron-Emitting Element-4: Modification of Flat Electron-Emitting Element] FIG. 2 is a schematic partial cross-sectional view of a modification of the electron-emitting element having the first structure composed of the flat-type electron-emitting element.
3 (C). In the flat electron-emitting device shown in FIG. 23C, the structure of the electron-emitting portion 15B is the same as that of FIG.
(C) is slightly different from the flat type electron-emitting device shown in FIG. FIG. 23 is a schematic partial cross-sectional view of a support and the like.
A method for manufacturing such an electron-emitting device will be described with reference to FIG.

[Step-400] First, a conductive material layer for a cathode electrode is formed on the support 10. Specifically, after a resist material layer (not shown) is formed on the entire surface of the support 10, the resist material layer where the cathode electrode is to be formed is removed. Thereafter, a cathode electrode conductive material layer made of chromium (Cr) is formed on the entire surface by a sputtering method. Further, a resistor layer 60 made of SiC is formed on the entire surface by sputtering.
Then, a graphite powder coating layer is formed on the resistor layer 60 by a spin coating method, and the graphite powder coating layer is dried. Thereafter, when the resist material layer is removed using a stripping solution, the cathode electrode conductive material layer, the resistor layer 60 and the graphite powder paint layer formed on the resist material layer are also removed. Thus, based on the so-called lift-off method, the cathode electrode 11, the resistor layer 60
And a structure in which the electron-emitting portions 15B are stacked (see FIG. 23A).

[Step-410] Next, the insulating layer 12 is formed on the entire surface.
Is formed, a gate electrode 13 composed of a stripe-shaped gate electrode forming layer is formed on the insulating layer 12 (see FIG. 23B). Thereafter, an opening 14 is formed in the gate electrode 13 and the insulating layer 12 so that the opening 1 is formed.
The electron-emitting portion 15B is exposed at the bottom of the substrate 4 (see FIG. 23C). Electrons are emitted from the electron emitting portion 15B provided on the surface of the cathode electrode 11 exposed at the bottom of the opening 14.

[Electron-Emitting Element-5: Modification of Flat-Type Electron-Emitting Element] A schematic partial end view of another modification of the electron-emitting element having the first structure composed of the flat-type electron-emitting element is shown in FIG.
This is shown in FIG. In this flat type electron-emitting device, the electron-emitting portion 15C is composed of a carbon thin film formed based on a CVD method.

It is preferable to form the electron emitting portion from a carbon thin film because the work function of carbon (C) is low and a high emitted electron current can be achieved. In order to emit electrons from the carbon thin film, the carbon thin film may be placed in an appropriate electric field (for example, an electric field having an intensity of about 10 ⁶ volt / cm).

When a carbon thin film such as a diamond thin film is plasma-etched using an oxygen gas by using a resist layer as an etching mask, (CH) _{x is} used as a reaction by-product in the etching reaction system.
A carbon-based polymer such as a system or (CF) _x system is generated as a deposition material. Generally, when a depositable substance is generated in an etching reaction system in plasma etching, this depositable substance is deposited on a side wall surface of a resist layer having a low probability of ion incidence or a processed end surface of an object to be etched to form a so-called side wall protective film. This contributes to achieving a shape obtained by anisotropic processing of the object to be etched. However, when oxygen gas is used as the etching gas, the sidewall protective film made of the carbon-based polymer is immediately removed by the oxygen gas even if it is formed. Further, when oxygen gas is used as an etching gas, the resist layer is greatly consumed. For these reasons, in the conventional oxygen plasma processing of a diamond thin film, the dimensional conversion difference with respect to the dimension of the mask of the diamond thin film is large, and it is often difficult to perform anisotropic processing.

In order to solve such a problem, for example, a structure in which a carbon thin film selective growth region is formed on the surface of the cathode electrode and an electron emission portion made of a carbon thin film is formed on the carbon thin film selective growth region may be adopted. Just fine. That is, in the manufacture of [Emission Device-5], a cathode electrode is formed on a support, a carbon thin film selective growth region is formed on the surface of the cathode electrode, and then a carbon thin film is formed on the carbon thin film selective growth region. (Corresponding to an electron-emitting portion). Incidentally, the step of forming a carbon thin film selective growth region on the surface of the cathode electrode,
This is referred to as a carbon thin film selective growth region forming step.

Here, the carbon thin film selective growth region is preferably a portion of the cathode electrode having metal particles adhered to the surface or a portion of the cathode electrode having a metal thin film formed on the surface. In order to further secure the selective growth of the carbon thin film in the carbon thin film selective growth region, sulfur (S), boron (B)
Or it is desirable that phosphorus (P) is attached, and these substances are considered to act as a kind of catalyst,
Thereby, the selective growth of the carbon thin film can be further improved. The carbon thin film selective growth region may be formed on the surface of the portion of the cathode electrode located at the bottom of the opening. May be formed to extend to the surface of the portion. Further, the carbon thin film selective growth region may be formed on the entire surface of the portion of the cathode electrode located at the bottom of the opening, or may be formed partially.

In the carbon thin film selective growth region forming step, the surface of the portion of the cathode electrode where the carbon thin film selective growth region is to be formed (hereinafter, may be simply referred to as the surface of the cathode electrode).
And a step of forming a metal thin film on the surface, thereby selectively growing a carbon thin film comprising a portion of the cathode electrode having the metal particles attached to the surface or the metal thin film formed on the surface. It is preferable to obtain a region.
In this case, in order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region, sulfur (S), boron (B) or phosphorus (P) is added to the surface of the carbon thin film selective growth region. It is desirable that the carbon thin film be adhered, so that the selective growth of the carbon thin film can be further improved. As a method of attaching sulfur, boron or phosphorus to the surface of the carbon thin film selective growth region, for example, a compound layer made of a compound containing sulfur, boron or phosphorus is formed on the surface of the carbon thin film selective growth region, and then, for example, heating is performed. By subjecting the compound layer to treatment, the compound constituting the compound layer is decomposed to leave sulfur, boron or phosphorus on the surface of the carbon thin film selective growth region. Examples of the compound containing sulfur include thionaphthene, thiophthene, and thiophene. Examples of the compound containing boron include triphenylborane. Examples of the phosphorus-containing compound include triphenylphosphine.

Alternatively, in order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region,
After attaching metal particles to the surface of the cathode electrode or forming a metal thin film, it is desirable to remove the metal oxide (so-called natural oxide film) on the surface of the metal particles or the surface of the metal thin film. The removal of the metal oxide on the surface of the metal particles or the surface of the metal thin film is performed by, for example, a microwave plasma method, a trans-coupled plasma method, an inductively-coupled plasma method, an electron cyclotron resonance plasma method, an RF plasma method, etc. in a hydrogen gas atmosphere. It is preferable to perform the plasma reduction process based on the above, a sputtering process in an argon gas atmosphere, or a cleaning process using an acid or a base such as hydrofluoric acid. When a step of attaching sulfur, boron or phosphorus to the surface of the carbon thin film selective growth region, or a step of removing metal oxide on the surface of the metal particles or the surface of the metal thin film, an opening is formed in the insulating layer. It is preferable to perform these steps after the provision and before the formation of the carbon thin film on the carbon thin film selective growth region.

As a method of attaching metal particles to the surface of the cathode electrode in order to obtain a carbon thin film selective growth region, for example, a region other than the cathode electrode region where the carbon thin film selective growth region is to be formed is made of an appropriate material (for example, After forming a layer composed of a solvent and metal particles on the surface of the portion of the cathode electrode where the carbon thin film selective growth region is to be formed in a state covered with the mask layer), a method of removing the solvent and leaving the metal particles is given. Can be. Alternatively, as a step of attaching metal particles to the surface of the cathode electrode, for example, in a state where a region other than the region of the cathode electrode where the carbon thin film selective growth region is to be formed is covered with an appropriate material (for example, a mask layer), After the metal compound particles containing metal atoms constituting the metal particles are attached to the surface of the cathode electrode, the metal compound particles are decomposed by heating, thereby comprising a portion of the cathode electrode with the metal particles attached to the surface. A method for obtaining a carbon thin film selective growth region can be mentioned. In this case, specifically, a method of forming a layer composed of a solvent and metal compound particles on the surface of the portion of the cathode electrode where the carbon thin film selective growth region is to be formed, and then removing the solvent to leave the metal compound particles is exemplified. can do. The metal compound particles include a metal halide (for example, iodide, chloride,
Preferably, the material is at least one material selected from the group consisting of bromide and the like, oxides, hydroxides and organometallics. In these methods, at an appropriate stage, a material (for example, a mask layer) covering a region other than the region of the cathode electrode where the carbon thin film selective growth region is to be formed is removed.

As a method of forming a metal thin film on the surface of the cathode electrode in order to obtain a carbon thin film selective growth region, for example, a region other than the cathode electrode region where the carbon thin film selective growth region is to be formed is coated with an appropriate material. Including electrolytic plating, electroless plating and MOCVD in the state
Method (chemical vapor deposition), physical vapor deposition (PVD)
Publicly-known method such as a physical vapor deposition method). In addition, as a physical vapor deposition method,
(A) various vacuum evaporation methods such as electron beam heating method, resistance heating method, flash evaporation method, (b) plasma evaporation method, (c) 2
Polar sputtering, DC sputtering, DC magnetron sputtering, high frequency sputtering, magnetron sputtering,
Various sputtering methods such as an ion beam sputtering method and a bias sputtering method, (d) DC (direct current) method, RF method,
Various ion plating methods such as a multi-cathode method, an activation reaction method, an electric field evaporation method, a high-frequency ion plating method, and a reactive ion plating method can be exemplified.

Here, the metal particles or metal thin films are made of molybdenum (Mo), nickel (Ni), titanium (T
i), chromium (Cr), cobalt (Co), tungsten (W), zirconium (Zr), tantalum (Ta),
Iron (Fe), copper (Cu), platinum (Pt) and zinc (Z
Preferably, it is composed of at least one metal selected from the group consisting of n).

Examples of the carbon thin film include a graphite thin film, an amorphous carbon thin film, a diamond-like carbon thin film, and a fullerene thin film. Examples of the method for forming the carbon thin film include a CVD method based on a microwave plasma method, a trans-coupled plasma method, an inductively-coupled plasma method, an electron cyclotron resonance plasma method, an RF plasma method, or the like. The form of the carbon thin film includes not only a thin film but also carbon whiskers and carbon nanotubes (including hollow and solid).

The structure of the cathode electrode may be a single-layer structure of a conductive material layer, a lower conductive material layer, a resistor layer formed on the lower conductive material layer, and a resistor layer formed on the resistor layer. It is also possible to have a three-layer structure of the upper conductive material layer formed. In the latter case, a carbon thin film selective growth region is formed on the surface of the upper conductive material layer. Thus, by providing the resistor layer, the electron emission characteristics in the electron emission portion can be made uniform.

Hereinafter, an example of a method of manufacturing a flat type electron-emitting device will be described with reference to FIGS. 24 and 25 which are schematic partial end views of a support and the like.

[Step-500] First, a cathode conductive material layer is formed on a support 10 made of, for example, glass, and then the cathode conductive material layer is patterned based on a well-known lithography technique and RIE method. Thus, a cathode electrode 11 composed of a stripe-shaped conductive material layer for a cathode electrode is formed on the support 10. The striped cathode electrode 11 extends in the left-right direction on the drawing sheet. The cathode electrode 11 is made of, for example, chromium (C
r) layer.

[Step-510] Thereafter, the insulating layer 1 is formed on the entire surface, specifically, on the support 10 and the cathode electrode 11.
Form 2

[Step-520] Next, a gate electrode 13 composed of a stripe-shaped gate electrode forming layer is formed on the insulating layer 12, and then the gate electrode 13 and the insulating layer 12 are formed.
Then, an opening 14 is formed, and the cathode electrode 11 is exposed at the bottom of the opening 14 (see FIG. 24A). The striped gate electrode 13 extends in a direction perpendicular to the plane of the drawing. The planar shape of the opening 14 is, for example, 1 μm to 30 μm in diameter.
It is a circle of μm. For example, about 1 to 3000 openings 14 may be formed in a region (electron emission region) for one pixel.

[Step-530] Next, an electron-emitting portion 15C is formed on the cathode electrode 11 exposed at the bottom of the opening 14. Specifically, first, the carbon thin film selective growth region 7 is formed on the surface of the cathode electrode 11 located at the bottom of the opening 14.
0 is formed. For this purpose, first, the mask layer 7 having the surface of the cathode electrode 11 exposed at the center of the bottom of the opening 14 is formed.
1 (see FIG. 24B). Specifically, after forming a resist material layer on the entire surface including the inside of the opening 14 by a spin coating method, based on a lithography technique,
By forming a hole in the resist material layer located at the center of the bottom of the opening 14, the mask layer 71 can be obtained. The mask layer 71 covers a part of the cathode electrode 11 located at the bottom of the opening 14, the side wall of the opening 14, the gate electrode 13, and the insulating layer 12. As a result, in the next step, a carbon thin film selective growth region is formed on the surface of the cathode electrode 11 located at the center of the bottom of the opening 14, but the cathode electrode 11 and the gate electrode 13 are short-circuited by metal particles. Can be reliably prevented.

Next, metal particles are adhered on the mask layer 71 including the exposed surface of the cathode electrode 11. Specifically, a solution in which nickel (Ni) fine particles are dispersed in a polysiloxane solution (isopropyl alcohol is used as a solvent) is applied to the entire surface by spin coating to form a cathode thin film selective growth region 70. Electrode 11
A layer composed of a solvent and metal particles is formed on the surface of the portion.
Thereafter, the mask layer 71 is removed, the solvent is removed by heating to about 400 ° C., and the metal particles 72 are left on the exposed surface of the cathode electrode 11, whereby the carbon thin film selective growth region 70 can be obtained. (See FIG. 25A). The polysiloxane is exposed on the exposed cathode electrode 1.
1 has a function of fixing the metal particles 72 to the surface (so-called adhesive function).

[Step-540] Thereafter, a carbon thin film 73 having a thickness of about 0.2 μm is formed on the carbon thin film selective growth region 70 to obtain the electron emitting portion 15C. This state is shown in FIG. The conditions for forming the carbon thin film 73 based on the microwave plasma CVD method are exemplified in Table 1 below.

[Table 1] [Film formation conditions for carbon thin film] Gas used: CH ₄ / H ₂ = 100/10 SCCM Pressure: 1.3 × 10 ³ Pa Microwave power: 500 W (13.56 MHz) Film formation temperature: 500 ゜ C

[Electron-Emitting Element-6: Plane-Type Electron-Emitting Element] FIG. 26C is a schematic partial cross-sectional view of an electron-emitting element having a second structure composed of a planar-type electron-emitting element. . The flat-type electron-emitting device is formed on a striped cathode electrode 11 formed on a support 10 made of, for example, glass, an insulating layer 12 formed on the support 10 and the cathode electrode 11, and an insulating layer 12. And a gate electrode 13 in the form of a stripe, and an opening 14 penetrating through the gate electrode 13 and the insulating layer 12 and exposing the cathode electrode 11 at the bottom. The cathode electrode 11 is shown in FIG.
26, and the gate electrode 13 extends in the left-right direction of FIG. 26C. Cathode electrode 11
Is made of chromium (Cr), and the insulating layer 12 is made of SiO ₂ . Here, the portion of the cathode electrode 11 exposed at the bottom of the opening 14 corresponds to the electron emission portion 15D.

Hereinafter, a method of manufacturing a flat-type electron-emitting device will be described with reference to FIG. 26 which is a schematic partial cross-sectional view of a support and the like.

[Step-600] First, the cathode electrode 11 functioning as the electron-emitting portion 15D is formed on the support. Specifically, after a cathode electrode conductive material layer made of chromium (Cr) is formed on the support 10 by a sputtering method, the cathode electrode conductive material layer is patterned based on a lithography technique and a dry etching technique.
Thereby, the cathode electrode 11 composed of the stripe-shaped conductive material layer for the cathode electrode can be formed on the support 10 (see FIG. 26A). The cathode electrode 11 extends in the direction perpendicular to the plane of FIG.

[Step-610] Next, an insulating layer 12 made of SiO _{2 is} formed on the entire surface, specifically, on the support 10 and the cathode electrode 11 by, for example, a CVD method.
Note that the insulating layer 12 can also be formed from a glass paste based on a screen printing method.

[Step-620] Thereafter, a gate electrode 13 composed of a stripe-shaped gate electrode forming layer is formed on the insulating layer 12 (see FIG. 26B). The gate electrode 13 extends in the left-right direction on the paper of FIG. For example, the gate electrode 13 made of a stripe-shaped gate electrode constituent layer can be directly formed on the insulating layer 12 by a screen printing method.

[Step-630] Next, an opening 14 is formed in the gate electrode 13 and the insulating layer 12, and the cathode electrode 11 functioning as the electron emitting portion 15D is exposed at the bottom of the opening 14 ((FIG. 26) C)).

[Electron-Emitting Element-7: Modification of Planar Electron-Emitting Element] FIG. 27A shows a schematic partial cross-sectional view of the flat-type electron-emitting element shown in FIG. The difference from the electron-emitting device is that minute uneven portions 11A are formed on the surface of the cathode electrode 11 exposed to the bottom of the opening 14 (corresponding to the electron-emitting portion 15D).
Such a flat-type electron-emitting device can be manufactured by the following manufacturing method.

[Step-700] First, [Step-600]
To [Step-620], a cathode electrode 11 composed of a stripe-shaped conductive material layer for a cathode electrode is formed on a support 10, and an insulating layer 12 is formed on the entire surface. A gate electrode composed of a gate electrode constituent layer is formed on the insulating layer. That is, a tungsten layer having a thickness of about 0.2 μm is formed on a support 10 made of, for example, glass by a sputtering method, and the tungsten layer is patterned in a stripe shape according to a normal procedure to form a cathode electrode 11. I do. Next, an insulating layer 12 is formed on the support 10 and the cathode electrode 11. The insulating layer 12 is made of TEOS (tetraethoxysilane)
Can be formed by a CVD method using as a source gas. Further, a gate electrode 13 is formed on the insulating layer 12.
To form The state in which the process up to this point has been completed is substantially the same as that shown in FIG.

[Step-710] [Step-630]
Similarly, the opening 14 is formed in the gate electrode 13 and the insulating layer 12, and the cathode electrode 11 is exposed at the bottom of the opening 14. Thereafter, a minute uneven portion 11A is formed on the portion of the cathode electrode 11 exposed at the bottom of the opening 14.
In forming the minute irregularities 11A, RIE is performed by using SF ₆ as an etching gas and setting conditions such that the difference in the etching rate between the crystal grains of tungsten constituting the cathode electrode 11 and the grain boundaries becomes large. Dry etching is performed based on. As a result, it is possible to form the minute uneven portions 11A having dimensions substantially reflecting the crystal grain size of tungsten.

In the configuration of such a flat-type electron-emitting device, a large electric field is applied from the gate electrode 13 to the fine irregularities 11A of the cathode electrode 11, more specifically, the convexities of the minute irregularities 11A. At this time, since the electric field concentrated on the convex portion is larger than that when the surface of the cathode electrode 11 is smooth, electrons are efficiently emitted from the convex portion by the quantum tunnel effect. Therefore, compared to a flat-type electron-emitting device in which the smooth cathode electrode 11 is simply exposed at the bottom of the opening 14, an improvement in luminance when incorporated in a flat-type display device can be expected. Therefore, according to the planar electron-emitting device shown in FIG. 27A, a sufficient emission electron current density can be obtained even if the potential difference between the gate electrode 13 and the cathode electrode 11 is relatively small. As a result, high luminance of the flat panel display device is achieved. Alternatively, the gate voltage required to achieve the same luminance may be low, so that low power consumption can be achieved.

The opening 14 was formed by etching the insulating layer 12, and then the minute uneven portion 11A was formed in the cathode electrode 11 based on the anisotropic etching technique. It is also possible to form the minute uneven portions 11A simultaneously by etching. That is, when the insulating layer 12 is etched, anisotropic etching conditions under which a certain degree of ion sputtering action can be expected are employed, and the etching is continued even after the opening 14 having the vertical wall is formed. The minute uneven portion 1 is formed on the portion of the cathode electrode 11 exposed at the bottom of the portion 14.
1A can be formed. After that, isotropic etching of the insulating layer 12 may be performed.

In the same step as [Step-600], a cathode conductive material layer made of tungsten is formed on the support 10 by a sputtering method, and then the cathode electrode is formed based on a lithography technique and a dry etching technique. After patterning the conductive material layer for use and then forming the minute uneven portion 11A on the surface of the conductive material layer for the cathode electrode, the same steps as [Step-610] to [Step-630] are executed to obtain a diagram. An electron-emitting device similar to that shown in FIG. 27A can be manufactured.

Alternatively, in the same step as in [Step-600], a conductive material layer for a cathode electrode made of tungsten is formed on the support 10 by a sputtering method.
After forming minute uneven portions 11A on the surface of the conductive material layer for the cathode electrode, and then patterning the conductive material layer for the cathode electrode based on the lithography technique and the dry etching technique, [Step-610] to [Step-630] By performing the same steps, an electron-emitting device similar to that shown in FIG. 27A can be manufactured.

FIG. 27B shows a modification of the electron-emitting device shown in FIG. In the electron-emitting device shown in FIG. 27B, the average height position of the tip portion of the minute uneven portion 11A is closer to the support 10 than the lower surface position of the insulating layer 12 (that is, it is lowered. Is). In order to form such an electron-emitting device, the duration of the dry etching in [Step-710] may be extended. According to such a configuration, the electric field intensity near the center of the opening 14 can be further increased.

FIG. 28 shows a flat-type electron-emitting device in which the coating layer 11B is formed on the surface of the cathode electrode 11 corresponding to the electron-emitting portion 15D (more specifically, at least on the minute uneven portion 11A). .

The coating layer 11B is preferably made of a material having a work function Φ smaller than that of the material forming the cathode electrode 11. The material to be selected is determined by the work It may be determined based on the function, the potential difference between the gate electrode 13 and the cathode electrode 11, the required magnitude of the emitted electron current density, and the like.
As a constituent material of the coating layer 11B, amorphous diamond can be exemplified. When the coating layer 11B is formed using amorphous diamond, 5 × 10
^At an electric field intensity of ⁷ V / m or less, the emission electron current density required for the flat panel display can be obtained.

The thickness of the coating layer 11B is
Should be selected to reflect the This is because the concave portion of the minute uneven portion 11A is buried by the coating layer 11B, and the surface of the electron emission portion is smoothed.
This is because the meaning of providing is lost. Therefore, depending on the size of the fine unevenness 11A, for example, when the fine unevenness 11A is formed by reflecting the crystal grain size of the electron-emitting portion, the thickness of the coating layer 11B is set to about 30 to 100 nm. Is preferably selected. In addition, when the average height position of the tip portion of the minute uneven portion 11A is lower than the lower surface position of the insulating layer, strictly speaking, the average height position of the tip portion of the coating layer 11B is lower than the lower surface position of the insulating layer. Lowering is more preferable.

More specifically, after [Step-710], a coating layer 11B made of amorphous diamond may be formed on the entire surface by, eg, CVD. In addition, the coating layer 11B
Is also deposited on an etching mask (not shown) formed on the gate electrode 13 and the insulating layer 12, but this deposited portion is removed simultaneously when the etching mask is removed. As a raw material gas, for example, a CH ₄ / H ₂ mixed gas,
The coating layer 11B can be formed based on a CVD method using a CO / H ₂ mixed gas, and the coating layer 11B made of amorphous diamond is formed by thermal decomposition of a compound containing carbon.

Alternatively, in the same step as [Step-600], after forming a cathode conductive material layer made of tungsten on the support 10 by a sputtering method,
The conductive material layer for the cathode electrode is patterned based on the lithography technique and the dry etching technique, and then the fine irregularities 11A are formed on the surface of the conductive material layer for the cathode electrode, and then the coating layer 11B is formed. 6
10] to [Step-630], the electron-emitting device shown in FIG. 28 can be manufactured.

Alternatively, in the same step as [Step-600], after forming a cathode electrode conductive material layer made of tungsten on the support 10 by a sputtering method,
After forming minute uneven portions 11A on the surface of the conductive material layer for a cathode electrode, and then forming a coating layer 11B, the coating layer 11 is formed based on a lithography technique and a dry etching technique.
B, after patterning the conductive material layer for the cathode electrode,
By performing the same steps as [Step-610] to [Step-630], the electron-emitting device shown in FIG. 28 can also be manufactured.

Alternatively, as a material constituting the coating layer, a material may be appropriately selected such that the secondary electron gain δ of such a material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. it can.

Incidentally, the electron-emitting portion 15D (the surface of the cathode electrode 11) of the flat-type electron-emitting device shown in FIG.
May be formed with a coating layer. In this case, [Step-6]
30], a coating layer 11B may be formed on the surface of the cathode electrode 11 exposed at the bottom of the opening 14, or in [Step-600], for example, a conductive material for a cathode electrode may be formed on the support 10. After forming the layers, the coating layer 11B may be formed on the conductive material layer for the cathode electrode, and then these layers may be patterned based on the lithography technique and the dry etching technique.

[Electron-Emitting Element-8: Crater-Type Electron-Emitting Element] FIG. 32B is a schematic partial cross-sectional view of the crater-type electron-emitting element. The crater-type electron-emitting device includes a cathode electrode 211 having a plurality of raised portions 211A for emitting electrons and a concave portion 211B surrounded by each raised portion 211A, on a support 10. FIG. 31B is a schematic perspective view in which the insulating layer 12 and the gate electrode 13 are removed.

The shape of the concave portion is not particularly limited, but typically forms a substantially spherical surface. This is because a sphere is used in the method for manufacturing the crater type electron-emitting device, and the concave portion 211B is used.
Is formed to reflect a part of the shape of the sphere. Therefore, when the concave portion 211B forms a substantially spherical surface, the raised portion 211A surrounding the concave portion 211B has an annular shape. In this case, the concave portion 211B and the raised portion 211A have a shape like a crater or a caldera as a whole. Since the raised portion 211A is a portion that emits electrons, it is particularly preferable that the tip portion 211C is sharp from the viewpoint of enhancing the electron emission efficiency. Tip 21 of raised portion 211A
Even if the profile of 1C has irregular irregularities,
Alternatively, it may be smooth. The arrangement of the raised portions 211A in one pixel may be regular or random. In addition, the concave portion 211B may be surrounded by a raised portion 211A continuous along the circumferential direction of the concave portion 211B, or in some cases, may be surrounded by a discontinuous raised portion 211A along the circumferential direction of the concave portion 211B. You may.

In such a method for manufacturing a crater-type electron-emitting device, the step of forming a striped cathode electrode on a support is more specifically performed by forming a striped cathode electrode conductive layer covering a plurality of spheres. Forming a material layer on a support; removing the spheres to remove a portion of the cathode electrode conductive material layer covering the spheres, thereby forming a plurality of ridges for emitting electrons; and each ridge. And forming a cathode electrode having a concave portion that is surrounded by the portion and reflects a part of the shape of the sphere.

It is preferable to remove the sphere by a change in the state and / or a chemical change of the sphere. Here, the state change and / or chemical change of the sphere means a change such as expansion, sublimation, foaming, gas generation, decomposition, combustion, carbonization, or a combination thereof. For example, if the sphere is made of an organic material, it is more preferable to remove the sphere by burning it. The removal of the sphere and the removal of the portion of the conductive material layer for the cathode electrode covering the sphere, or the removal of the sphere and the removal of the portion of the conductive material layer for the cathode electrode covering the sphere, the insulating layer, and the gate electrode constituent layer , But not necessarily simultaneously. For example, if a part of the sphere remains after removing the portion of the conductive material layer for the cathode electrode covering the sphere, or in addition to the portion of the insulating layer or the gate electrode constituting layer, the remaining sphere is removed. You can do it later.

In particular, when the sphere is made of an organic material, when the sphere is burned, for example, carbon monoxide, carbon dioxide, and water vapor are generated, the pressure in the closed space near the sphere increases, and the cathode electrode near the sphere is used. The conductive material layer bursts when a certain pressure limit is exceeded. With the force of this burst,
The portion of the conductive material layer for the cathode electrode that covers the sphere is scattered to form a bulge and a concave portion, and the sphere is removed. Alternatively, for example, when the sphere is burned, the conductive material layer for the cathode electrode, the insulating layer, and the gate electrode constituting layer explode when a certain breakdown voltage limit is exceeded, based on the same mechanism. Due to the force of the rupture, the portion of the conductive material layer for the cathode electrode, the insulating layer, and the gate electrode constituting layer covering the sphere scatters, an opening is formed at the same time as the protrusion and the recess, and the sphere is removed. That is, before removing the sphere, there is no opening in the insulating layer and the gate electrode constituent layer,
An opening is formed as the sphere is removed. At this time, since the initial process of burning the sphere proceeds in the closed space, a part of the sphere may be carbonized. It is preferable to make the thickness of the portion of the conductive material layer for the cathode electrode covering the sphere thin enough to be scattered by bursting. Alternatively, the thickness of the conductive material layer for the cathode electrode covering the sphere, the insulating layer, and the gate electrode constituting layer is preferably reduced to such a degree that the sphere can be scattered by rupture. It is preferred that the thickness of the uncoated portion be approximately the same as the diameter of the sphere.

In [Electron-emitting device-10] to be described later, the sphere can be removed by a state change and / or a chemical change of the sphere. However, since the sphere is not accompanied by the rupture of the cathode electrode conductive material layer, the sphere is removed by an external force. It is sometimes easier to perform Also, [Electron-emitting device-11] described later.
Although the opening is already completed before removing the sphere, the sphere can be removed by an external force when the size of the opening is larger than the diameter of the sphere. Here, the external force is a physical force such as a blowing pressure of air or an inert gas, a blowing pressure of a cleaning liquid, a magnetic attraction force, an electrostatic force, a centrifugal force, or the like. In the [electron-emitting device-10] or [electron-emitting device-11], unlike the [electron-emitting device-8], a portion of the conductive material for the cathode electrode covering the sphere, or in some cases, furthermore, Since there is no need to scatter the insulating layer or the gate electrode constituent layer, there is an advantage that residues of the conductive material layer for the cathode electrode, the insulating layer or the gate electrode constituent layer are hardly generated.

The sphere used in [Electron-emitting device-10] or [Electron-emitting device-11] described later has at least a surface made of a conductive material layer for a cathode electrode, and depending on the configuration, an insulating layer or a gate electrode forming layer. Is preferably made of a material having a large interfacial tension as compared with the interfacial tension (surface tension) of the material constituting the material. As a result, in the [electron emission element-11], the conductive material layer for the cathode electrode, the insulating layer, and the gate electrode forming layer do not cover at least the top of the sphere, and the opening is formed from the beginning. Is obtained. How large the diameter of the opening is, for example, the conductive material layer for the cathode electrode, the relationship between the thickness of the material constituting the insulating layer and the gate electrode constituting layer and the diameter of the sphere, and the conductive material layer for the cathode electrode,
It depends on the method for forming the insulating layer and the gate electrode forming layer, the interfacial tension (surface tension) of the conductive material layer for the cathode electrode, and the material forming the insulating layer and the gate electrode forming layer.

In [Electron-Emitting Element-10] or [Electron-Emitting Element-11] to be described later, at least the surface of the sphere only needs to satisfy the above-mentioned condition regarding interfacial tension. In other words, the portion having an interfacial tension higher than the interfacial tension of each of the conductive material layer for the cathode electrode, the insulating layer, and the gate electrode constituting layer may be only the surface of the sphere or the whole, The surface and / or the whole constituent material of the sphere may be any of an inorganic material, an organic material, or a combination of an inorganic material and an organic material. [Electron Emitting Element-1
0] or [Electron-emitting device-11], when the conductive material layer for the cathode electrode and the like are made of a normal metal-based material and the insulating layer is made of a silicon oxide-based material such as glass, the surface of the metal-based material Is a hydroxyl group derived from adsorbed moisture, and the surface of the insulating layer is dangling with Si—O bonds.
Usually, a hydroxyl group derived from the bond and the adsorbed moisture is present and is in a state of high hydrophilicity. Therefore, it is particularly effective to use a sphere having a hydrophobic surface treatment layer. As a constituent material of the hydrophobic surface treatment layer, a fluorine-based resin such as polytetrafluoroethylene can be used. When the sphere has a hydrophobic surface treatment layer, the inside of the hydrophobic surface treatment layer is referred to as a core material, and the core material is made of a polymer material other than glass, ceramics, and fluororesin. Any of these may be used.

The organic material constituting the sphere is not particularly limited, but a general-purpose polymer material is preferable. However, in the case of a polymer material having an extremely large degree of polymerization or an extremely high content of multiple bonds, the burning temperature becomes too high, and when the sphere is removed by burning, the conductive material layer for the cathode electrode, the insulating layer, and the gate electrode structure The layers may be adversely affected. Therefore, it is preferable to select a polymer material that can be burned or carbonized at a temperature at which there is no risk of adversely affecting these materials. In particular, when the insulating layer is formed using a material that needs to be fired in a later step, such as a glass paste,
From the viewpoint of reducing the number of steps as much as possible, it is preferable to select a polymer material that can be burned or carbonized at the firing temperature of the glass paste. Since the typical firing temperature of the glass paste is about 530 ° C., the burning temperature of such a polymer material is preferably about 350 to 500 ° C. Representative polymer materials include styrene, urethane, acrylic, vinyl, divinylbenzene, melamine, formaldehyde, and polymethylene homopolymers and copolymers. Alternatively, as a sphere, in order to ensure a reliable arrangement on the support,
Sticking type spheres having an adhesive force can also be used. As the fixed type sphere, a sphere made of an acrylic resin can be exemplified.

Alternatively, for example, a heat-expandable microsphere encapsulated with a vinylidene chloride-acrylonitrile copolymer as an outer shell, isobutane as a foam material, and encapsulated can be used as a sphere. In the [electron-emitting device-8], when the heat-expandable microspheres are heated using the heat-expandable microspheres, the polymer of the outer shell is softened, and the encapsulated isobutane is gasified and expanded. A hollow body of a true sphere having a diameter of about four times that before the expansion is formed. As a result, in the [electron-emitting device-8], a raised portion that emits electrons and a concave portion that is surrounded by the raised portion and reflects a part of the shape of a sphere are formed in the conductive material layer for a cathode electrode. be able to. Further, in addition to the concave portion and the raised portion, an opening penetrating the gate electrode forming layer and the insulating layer can be formed. In this specification, the expansion of the heat-expandable microsphere due to heating is also included in the concept of the removal of the sphere. Thereafter, the thermal expansion type microspheres may be removed using an appropriate solvent.

In the [electron-emitting device-8], after a plurality of spheres are arranged on the support, a conductive material layer for a cathode electrode covering the spheres may be formed. In this case, or in [Electron-Emitting Device-10] or [Electron-Emitting Device-11] to be described later, as a method of arranging a plurality of spheres on the support, a dry method of spraying the spheres on the support is used. Law. For example, in the field of manufacturing a liquid crystal display device, a technique of spraying spacers for maintaining a constant panel interval can be applied to the spraying of spheres. Specifically, a so-called spray gun that sprays a sphere from a nozzle with compressed gas can be used.
When the sphere is ejected from the nozzle, the sphere may be dispersed in a volatile solvent. Alternatively, the spheres can be sprinkled using an apparatus or method commonly used in the field of electrostatic powder coating. For example, a sphere negatively charged by an electrostatic powder spray gun utilizing corona discharge can be sprayed toward a grounded support. Since the sphere used is very small as described later, when the sphere is sprayed on the support, it adheres to the surface of the support by, for example, electrostatic force, and does not easily fall off the support in the subsequent steps. After arranging a plurality of spheres on the support, if the spheres are pressurized, overlapping of the plurality of spheres on the support can be eliminated, and the spheres can be densely arranged in a single layer on the support. it can.

Alternatively, [Electron-emitting device-9] described later
As described above, a composition layer composed of a composition obtained by dispersing a sphere and a cathode electrode material in a dispersion medium is formed on a support, whereby a plurality of spheres are arranged on the support, After coating the sphere with a cathode electrode made of a material, the dispersion medium can be removed. The composition may be in the form of a slurry or a paste, and the composition and viscosity of the dispersion medium may be appropriately selected according to the desired properties. As a method for forming the composition layer on the support, a screen printing method is suitable. The cathode electrode material is typically
It is preferable that the fine particles have a sedimentation speed in a dispersion medium lower than that of a sphere. Examples of a material constituting such fine particles include carbon, barium, strontium, and iron. After removing the dispersion medium, the cathode electrode is fired if necessary. Examples of the method for forming the composition layer on the support include a spraying method, a dropping method, a spin coating method, and a screen printing method. The spheres are arranged, and the spheres are covered with a cathode electrode conductive material layer made of a cathode electrode material. Depending on the method of forming the composition layer, the cathode electrode conductive material layer is patterned. There is a need.

Alternatively, [Electron Emitting Element-1] described later
0] or [Electron-emitting device-11], a composition layer composed of a composition obtained by dispersing spheres in a dispersion medium is formed on a support, whereby a plurality of spheres are formed on the support. After disposing, the dispersion medium can be removed. The composition may be in the form of a slurry or a paste, and the composition and viscosity of the dispersion medium may be appropriately selected according to the desired properties. Typically, an organic solvent such as isopropyl alcohol is used as a dispersion medium, and the dispersion medium can be removed by evaporation. Examples of the method for forming the composition layer on the support include a spraying method, a dropping method, a spin coating method, and a screen printing method.

By the way, the direction in which the gate electrode forming layer and the cathode conductive material layer are different from each other (for example, the angle formed by the projected image of the striped gate electrode forming layer and the projected image of the striped cathode conductive material layer). Is 90 degrees)
And is patterned in, for example, a stripe shape, and electrons are emitted from the protruding portion located in the electron emission region. Therefore, the raised portion only needs to be present only in the electron emission region in terms of function. However, even if the protrusions and recesses exist in a region other than the electron emission region, such protrusions and recesses do not perform any function of emitting electrons while being covered with the insulating layer. Therefore,
No problem arises even if the sphere is arranged on the whole surface.

On the other hand, when the portions of the conductive material layer for the cathode electrode, the insulating layer and the gate electrode constituting layer which cover the sphere are removed, the arrangement position of each sphere and the formation position of the opening are one-to-one. Therefore, an opening is formed in a region other than the electron emission region. Hereinafter, an opening formed in a region other than the electron emission region is referred to as an “ineffective opening” and is distinguished from an original opening that contributes to electron emission. By the way, even if an invalid opening is formed in a region other than the electron emitting region, the invalid opening does not function as an electron emitting element at all, and has no adverse effect on the operation of the electron emitting element formed in the electron emitting region. Absent. This is because the gate electrode is not formed at the upper end of the invalid opening even if the protrusion and the concave portion are exposed at the bottom of the invalid opening, or the gate electrode is formed at the upper end of the invalid opening. Even if it is formed, the raised portion and the concave portion are not exposed at the bottom, or the raised portion and the concave portion are not exposed at the bottom of the invalid opening, and the gate electrode is not formed at the upper end. ,
This is simply because the surface of the support is exposed. Therefore, no problem occurs even if the sphere is arranged on the entire surface. The hole formed on the boundary between the electron emission region and the other region is included in the opening.

The diameter of the sphere is determined by the diameter of the desired opening, the diameter of the recess, the display screen size of a flat display device using electron-emitting devices, the number of pixels, and the electron-emitting region (overlapping region).
The size can be selected according to the number of electron-emitting devices that should constitute one pixel, but is preferably selected within the range of 0.1 to 10 μm. For example, a sphere commercially available as a spacer for a liquid crystal display device has a particle size distribution of 1 to 3%.
Therefore, it is preferable to use this. Ideally, the shape of the sphere is a true sphere, but it need not necessarily be a true sphere. In addition, depending on the method for manufacturing the electron-emitting device, as described above, either the opening or the ineffective opening may be formed at the place where the sphere is disposed, but the sphere is formed on the support by 100 to 5000. It is preferable to arrange them at a density of about pieces / mm ² . For example, about 1000 spheres
When placed on the support at a density of pcs / mm ² , for example, if the size of the electron emission region is 0.5 mm × 0.2 mm, about 100 spheres exist in this electron emission region,
About 100 ridges will be formed. If such a number of protrusions are formed in one electron emission region, the variation in the diameter of the concave portion due to the variation in the particle size distribution and the sphericity of the sphere is substantially averaged, and in practice, one pixel The emission electron current density and luminance per (or one subpixel) become substantially uniform.

In [Electron-Emitting Element-8] or [Electron-Emitting Element-9] to [Electron-Emitting Element-11] to be described later, a part of the shape of a sphere is reflected in the shape of a concave portion forming an electron-emitting portion. You. The profile at the tip of the ridge is
It may have irregular irregularities or may be smooth. In particular, in the case of [Electron-Emitting Element-8] or [Electron-Emitting Element-9], this tip is formed of a conductive material layer for a cathode electrode. , The tip of the raised portion is likely to have an irregular shape. If the tip is sharpened to the ridge due to the breakage, the tip can function as a highly efficient electron-emitting portion, which is advantageous. In [Electron-Emitting Element-8] to [Electron-Emitting Element-11], each of the raised portions surrounding the concave portion has a substantially annular shape, and the concave portion and the raised portion in this case have a shape like a crater or caldera as a whole. Present.

The arrangement of the ridges on the support may be regular or random, depending on the method of arranging the spheres. When the above-mentioned dry method or wet method is adopted,
The arrangement of the ridges on the support is random. still,
The concave portion may be surrounded by a raised portion continuous along the circumferential direction of the concave portion, and in some cases, the concave portion may be surrounded by a discontinuous raised portion along the circumferential direction of the concave portion.

[Electron Emitting Element-8] to [Electron Emitting Element-
11], in the case where an opening is formed in the insulating layer after the formation of the insulating layer, the tip of the raised portion is not damaged.
It is also possible to adopt a configuration in which a protective layer is formed after the protrusion is obtained, and the protective layer is removed after the opening is formed. Chromium can be exemplified as a material constituting the protective layer.

Hereinafter, a method of manufacturing the electron-emitting device of [Electron-Emitting Device-8] will be described with reference to FIGS. 29 to 32. FIGS. 29 (A), 30 (A), and 31 (A)
32 is a schematic partial end view, FIGS. 32A and 32B are schematic partial cross-sectional views, and FIGS.
FIGS. 30B and 31B are partial perspective views schematically showing a wider range than FIGS. 29A, 30A and 31A. .

[Step-800] First, the cathode electrode 211 covering the plurality of spheres 80 is formed on the support. Specifically, first, a support 1 made of, for example, glass is used.
The sphere 80 is arranged on the entire surface on the zero. The sphere 80 is made of, for example, a polymethylene-based polymer material and has an average diameter of about 5 mm.
μm, particle size distribution less than 1%. Approximately 1000 spheres / mm were placed on the support 10 using a spray gun.
Place randomly at a density of ² . Spraying using a spray gun may be carried out by a method in which spheres are mixed with a volatile solvent and sprayed, or a method in which the spheres are sprayed from a nozzle in a powder state. The placed sphere 80 is placed on the support 1 by electrostatic force.
It is held on zero. This state is shown in FIGS. 29A and 29B.

[Step-810] Next, a cathode electrode conductive material layer 211 ′ is formed on the sphere 80 and the support 10. FIGS. 30A and 30B show the state in which the cathode electrode conductive material layer 211 'is formed. The cathode electrode conductive material layer 211 'can be formed, for example, by screen-printing a carbon paste in a stripe shape. At this time, since the sphere 80 is disposed on the entire surface of the support 10, the sphere 80 contains the conductive material layer 21 for the cathode electrode as shown in FIG.
There are of course some that are not coated with 1 '. Next, in order to remove the water and the solvent contained in the cathode electrode conductive material layer 211 ′ and to flatten the cathode electrode conductive material layer 211 ′, the cathode electrode conductive material layer 211 ′ is heated at 150 ° C., for example. Dry 211 '. At this temperature, the sphere 80
Does not cause any state and / or chemical changes. still,
Instead of screen printing using carbon paste as described above, a cathode electrode conductive material layer 211 ′ is formed on the entire surface, and the cathode electrode conductive material layer 211 ′ is patterned using a normal lithography technique and a dry etching technique. And a stripe-shaped conductive material layer 2 for a cathode electrode.
11 'can also be formed. When a lithography technique is applied, a resist layer is usually formed by a spin coating method.
If the number of rotations is about 500 rpm and the rotation time is about several seconds, the sphere 80 can be held on the support 10 without falling off or displacing.

[Step-820] Next, by removing the sphere 80, the portion of the conductive material layer 211 'for the cathode electrode covering the sphere 80 is removed, whereby the plurality of raised portions 211A for emitting electrons are removed. And a concave portion 211 surrounded by each raised portion 211A and reflecting a part of the shape of the sphere 80
The cathode electrode 211 having B is formed. This state is shown in FIGS. 31 (A) and (B). Specifically, it is also used to bake the cathode electrode conductive material layer 211 ′,
The sphere 80 is burned by heating at 0 ° C. The pressure in the closed space in which the sphere 80 was confined increases with the burning of the sphere 80, and the portion of the cathode electrode conductive material layer 211 'covering the sphere 80 ruptures when it exceeds a certain withstand pressure limit. Removed. As a result, the support 1
A protruding portion 211A and a concave portion 211B are formed in a part of the cathode electrode 211 formed on the lower electrode 0. If a part of the sphere remains as a residue after the sphere is removed, the residue may be removed using an appropriate cleaning solution, depending on the material constituting the sphere to be used.

[Step-830] Then, the cathode electrode 2
An insulating layer 12 is formed on the support 11 and the support 10. Specifically, for example, a glass paste is screen-printed on the entire surface to a thickness of about 5 μm. Next, the insulating layer 12 is dried at, for example, 150 ° C. in order to remove moisture and a solvent contained in the insulating layer 12 and to planarize the insulating layer 12. Instead of screen printing using a glass paste as described above, an SiO ₂ film may be formed by, for example, a plasma CVD method.

[Step-840] Next, on the insulating layer 12,
A gate electrode 13 composed of a stripe-shaped gate electrode constituent layer is formed (see FIG. 32A). The direction in which the projected image of the striped gate electrode forming layer extends is at an angle of 90 degrees to the direction in which the projected image of the striped cathode electrode conductive material layer extends.

[Step-850] Thereafter, the gate electrode 13
The opening 14 is formed in the gate electrode 13 and the insulating layer 12 in the electron emission region where the projection image of the cathode electrode 211 and the projection image of the cathode electrode 211 overlap each other. And the recess 211B is exposed.
The opening 14 can be formed by forming a resist mask by a usual lithography technique and etching using the resist mask. However, the cathode electrode 21
It is preferable to perform etching under conditions that can ensure a sufficiently high etching selectivity with respect to 1. Alternatively, it is preferable that a protective layer made of, for example, chromium is formed after the formation of the raised portion 211A, and the protective layer is removed after the opening 14 is formed. After that, the resist mask is removed. Thus, the electron-emitting device shown in FIG. 32B can be obtained.

As a modification of the method for manufacturing [Electron-Emitting Element-8], [Step-810], [Step-830]
To [Step-850], and then [Step-82].
0] may be executed. In this case, the burning of the sphere and the firing of the material forming the gate electrode 13 and the insulating layer 12 may be performed simultaneously.

Alternatively, after [Step-810], [Step-830] is performed, and in the same step as [Step-840], a stripe-shaped gate electrode forming layer having no opening. Is formed on the insulating layer, [Step-8]
20]. As a result, the cathode electrode conductive material layer 211 ′ covering the sphere 80, the insulating layer 12, and each part of the gate electrode constituent layer are removed, thereby forming an opening penetrating the gate electrode 13 and the insulating layer 12. And a raised portion 211A for emitting electrons, and a raised portion 211A.
, And a concave portion 211B reflecting a part of the shape of the sphere 80, can be formed in the cathode electrode 211 located at the bottom of the opening. That is, the pressure in the closed space in which the sphere 80 is confined increases with the burning of the sphere 80, and the cathode conductive material layer 211 ′, the insulating layer 12, and the gate electrode constituent layer of the portion covering the sphere are formed. When the pressure exceeds the withstand pressure limit, the rupture occurs, an opening is formed at the same time as the protrusion 211A and the recess 211B, and the sphere 80 is removed. The opening penetrates through the gate electrode 13 and the insulating layer 12 and reflects a part of the shape of the sphere 80. The bottom of the opening has a raised portion 211A that emits electrons, and a concave portion 2 that is surrounded by the raised portion 211A and reflects a part of the shape of the sphere 80.
11B remains.

[Electron-Emitting Element-9: Modification of Crater-Type Electron-Emitting Element] A modification of the method of manufacturing the crater-type electron-emitting element will be described with reference to FIG. Forming a composition layer 81 made of a composition obtained by dispersing a sphere 80 and a cathode electrode material in a dispersion medium on the support 10, and thus forming a plurality of spheres 80 on the support 10. The method differs from the method of manufacturing [Electron-Emitting Element-8] in that it comprises a step of disposing and covering the sphere with the cathode electrode 211 made of the cathode electrode material and then removing the dispersion medium, that is, a wet method.

[Step-900] First, a plurality of spheres 80 are arranged on the support 10. Specifically, a composition layer 81 made of a composition obtained by dispersing a sphere 80 and a cathode electrode material 81B in a dispersion medium 81A is formed on the support 10. That is, for example, isopropyl alcohol is added to the dispersion medium 8.
1A, a sphere 80 made of a polymethylene-based polymer material having an average diameter of about 5 μm;
A composition formed by dispersing carbon particles of μm as a cathode electrode material 81B in a dispersion medium 81A is screen-printed in stripes on the support 10 to form a composition layer 81. FIG. 33A shows a state immediately after the formation of the composition layer 81.

[Step-910] In the composition layer 81 held by the support 10, the spheres 80 will soon settle out and be disposed on the support 10.
The cathode electrode material 81B is settled thereon, and the cathode electrode constituent layer 211 ′ made of the cathode electrode material 81B.
Is formed. Thus, the plurality of spheres 80 can be disposed on the support 10 and the spheres 80 can be covered with the cathode electrode conductive material layer 211 ′ made of the cathode electrode material. This state is shown in FIG.

[Step-920] Thereafter, the dispersion medium 81A is removed, for example, by evaporation. This state,
This is shown in FIG.

[Step-930] Next, steps similar to [Step-820] to [Step-850] of [Electron-emitting device-8], or a modification of the method for manufacturing [Electron-emitting device-8] are described. By performing this, an electron-emitting device similar to that shown in FIG. 32B can be completed.

[Electron-Emitting Element-10: Modification of Crater-Type Electron-Emitting Element] In a modification of the method for manufacturing a crater-type electron-emitting element, the step of forming a striped cathode electrode on a support is more specifically described. Has a step of arranging a plurality of spheres on a support, a plurality of ridges emitting electrons, and a recess surrounded by each ridge and reflecting a part of the shape of the sphere, The method comprises the steps of providing a cathode electrode having a raised portion formed around a sphere on a support, and removing the sphere. The arrangement of the plurality of spheres on the support is performed by scattering the spheres. The sphere has a hydrophobic surface treatment layer. Hereinafter, a method for manufacturing such an electron-emitting device will be described with reference to FIG.

[Step-1000] First, a plurality of spheres 180 are arranged on the support. Specifically, a plurality of spheres 180 are arranged on the entire surface of the support 10 made of glass. The sphere 180 is formed by coating a core material 180A made of, for example, a divinylbenzene polymer material with a surface treatment layer 180B made of a polytetrafluoroethylene resin, and has an average diameter of about 5 μm and a particle size distribution of less than 1%. . The spheres 180 are randomly arranged on the support 10 at a density of approximately 1000 / mm ² using a spray gun. The placed sphere 180 is adsorbed on the support 10 by electrostatic force. FIG. 34A shows a state in which the processes up to this point have been completed.

[Step-1010] Next, a plurality of raised portions 211A for emitting electrons, and each of the raised portions 211A are surrounded by the raised portions 211A.
And a concave portion 211B reflecting a part of the shape of the sphere 180
The cathode electrode 211 (made of a cathode electrode conductive material layer) in which each raised portion 211A is formed around the sphere 180 is provided on the support 10. In particular,
As described in [Electron Emitting Element-8], for example, carbon paste is screen-printed in a stripe shape.
In [Electron-emitting device-10], since the surface of the sphere 180 is made hydrophobic by the surface treatment layer 180B, the carbon paste screen-printed on the sphere 180 is immediately repelled and falls, and The protrusion 211A is formed by being deposited around the periphery. Tip part 2 of raised part 211A
11C is not as sharp as in [Electron Emitting Element-8]. The portion of the conductive material layer for the cathode electrode that has entered between the sphere 180 and the support 10 becomes the concave portion 211B. In FIG. 34B, the cathode electrode 211 and the sphere 1
Although it is shown so that there is a gap between it and 80,
The cathode electrode 211 and the sphere 180 may be in contact with each other. Thereafter, the cathode electrode 211 is dried at, for example, 150 ° C. FIG. 34B shows a state in which the processes up to this point have been completed.

[Step-1020] Next, an external force is applied to the sphere 180 so that the sphere 180
Is removed. As a specific removing method, cleaning and blowing of compressed gas can be mentioned. FIG. 34C shows a state in which the processes up to this point have been completed. The sphere may be removed based on the state change and / or chemical change of the sphere, more specifically, for example, by combustion. The same applies to [Electron-emitting device-11] described below.

[Step-1030] After that, [Step-830] to [Step-850] of [Electron-emitting device-8] are executed, so that an electron-emitting device substantially similar to that shown in FIG. Can be obtained.

As a modification of the method for manufacturing [Electron-Emitting Element-10], [Step-830] to [Step-850] of [Electron-Emitting Element-8] are executed after [Step-1010]. Then, [Step-1020] may be executed.

[Electron-Emitting Element-11] In a modification of the method for manufacturing a crater-type electron-emitting element, the step of forming a striped cathode electrode on a support is, more specifically, a plurality of steps. A step of disposing a sphere, a plurality of ridges for emitting electrons, and a recess surrounded by each ridge and reflecting a part of the shape of the sphere; each ridge is formed around the sphere; Providing the formed cathode electrode on a support. When the insulating layer is provided over the entire surface, an insulating layer having an opening formed above the sphere is provided on the cathode electrode and the support. The removal of the sphere is performed after the formation of the opening. In the method for manufacturing an electron-emitting device of [Electron-emitting device-11], the plurality of spheres are arranged on the support by scattering the spheres. The sphere has a hydrophobic surface treatment layer. Hereinafter, a method for manufacturing the electron-emitting device will be described with reference to FIGS.

[Step-1100] First, a plurality of spheres 180 are arranged on the support 10. Specifically, the same step as [Step-1000] of [Electron-emitting device-10] is executed.

[Step-1110] Thereafter, the plurality of raised portions 211A for emitting electrons and the concave portion 21 surrounded by each raised portion 211A and reflecting a part of the shape of the sphere 180 are formed.
1B, and the cathode electrode 211 in which each raised portion 211 </ b> A is formed around the sphere 180 is provided on the support 10. Specifically, [Step-1] of [Electron-emitting device-10]
010].

[Step-1120] Next, an insulating layer 212 having an opening 14A formed above the sphere is provided on the cathode electrode 211 and the support 10. Specifically, for example, a glass paste is screen-printed on the entire surface to a thickness of about 5 μm. Screen printing using a glass paste can be performed in the same manner as in [Electron Emitting Element-8], but since the surface of the sphere 180 is more hydrophobic due to the surface treatment layer 180B, a screen is printed on the sphere 180. The printed glass paste is immediately flipped and falls, and the portion of the insulating layer 212 above the sphere 180 contracts due to its own surface tension. As a result, the top of the sphere 180 is
2, and is exposed in the opening 14A. This state is shown in FIG. In the illustrated example, the diameter of the upper end of the opening 14A is larger than the diameter of the sphere 180, but when the interfacial tension of the surface treatment layer 180B is smaller than the interfacial tension of the glass paste, the diameter of the opening 14A becomes smaller. It tends to be smaller. Conversely, the surface treatment layer 180B
Is significantly larger than the interfacial tension of the glass paste, the diameter of the opening 14A tends to increase. Thereafter, the insulating layer 212 is dried at, for example, 150 ° C.

[Step-1130] Next, a gate electrode 213 having an opening 14B communicating with the opening 14A is formed on the insulating layer 212. Specifically, for example, a carbon paste is screen-printed in a stripe shape. The screen printing using the carbon paste may be performed in the same manner as in [Electron-emitting device-8]. However, since the surface of the sphere 180 is more hydrophobic by the surface treatment layer 180B, the screen printing is performed on the sphere 180. The carbon paste is immediately repelled, contracts due to its own surface tension, and adheres only to the surface of the insulating layer 212. At this time, the gate electrode 213 may be formed so as to slightly extend from the opening end of the insulating layer 212 into the opening 14A as illustrated. After that, the gate electrode 213 is
Dry at 50 ° C. FIG. 35B shows a state in which the processes up to this point have been completed. The surface treatment layer 18
When the interfacial tension of 0B is smaller than the interfacial tension of the carbon paste, the diameter of the opening 14A tends to be smaller. Conversely, when the interfacial tension of the surface treatment layer 180B is significantly higher than the interfacial tension of the carbon paste,
The diameter of the opening 14A tends to increase.

[Step-1140] Next, the opening 14B,
The sphere 180 exposed at the bottom of 14A is removed. Specifically, it also serves as firing of the cathode electrode 211 and the insulating layer 212, and is performed at about 530 which is a typical firing temperature of the glass paste.
The sphere 180 is burned by heating at ゜ C. At this time, unlike the [electron-emitting device-8], the openings 14A and 14B are formed in the insulating layer 212 and the gate electrode 213.
Are formed from the beginning, the cathode electrode 211, the insulating layer 212, and a part of the gate electrode 213 do not scatter, and the sphere 180 is quickly removed. If the diameters of the upper ends of the openings 14A and 14B are larger than the diameter of the sphere 180, the sphere 180 is not burned, but is washed by an external force such as washing or blowing of compressed gas.
It is possible to remove 0. FIG. 36A shows a state in which the processes up to this point have been completed.

[Step-1150] Thereafter, the opening 14A
When a part of the insulating layer 212 corresponding to the side wall surface is isotropically etched, the electron-emitting device shown in FIG. 36B can be completed. Here, the end of the gate electrode 213 faces downward, but this is preferable for increasing the electric field strength in the opening 14.

[Electron-Emitting Element-12: Edge-Type Electron-Emitting Element] FIG. 37A is a schematic partial cross-sectional view of the edge-type electron-emitting element. This edge type electron-emitting device is formed by a stripe-shaped cathode electrode 3 formed on a support 10.
11, an insulating layer 12 formed on the support 10 and the cathode electrode 311, and a stripe-shaped gate electrode 13 formed on the insulating layer 12.
Are provided on the gate electrode 13 and the insulating layer 12. Edge 31 of cathode electrode 311 is provided at the bottom of opening 14.
1A is exposed. By applying a voltage to the cathode electrode 311 and the gate electrode 13, the cathode electrode 3
Electrons are emitted from the 11 edge portions 311A.

As shown in FIG. 37B, the concave portion 1 is formed in the support 10 below the cathode electrode 311 in the opening 14.
0A may be formed. Alternatively, as shown in a schematic partial cross-sectional view of FIG. 37C, the first gate electrode 13A formed on the support 10 and the first gate electrode 13A formed on the support 10 and the first gate electrode 13A are formed. The formed first insulating layer 12A, the cathode electrode 311 formed on the first insulating layer 12A, the first insulating layer 12A and the cathode electrode 3
11 and a second gate electrode 13B formed on the second insulating layer 12B. The opening 14 is formed by the second gate electrode 13B, the second insulating layer 12B, and the cathode electrode 31.
1 and the first insulating layer 12A.
The edge 311A of the cathode electrode 311 is exposed on the side wall of the fourth electrode 411. By applying a voltage to the cathode electrode 311 and the first gate electrode 13A and the second gate electrode 13B, the cathode electrode 31 corresponding to the electron emission portion is formed.
Electrons are emitted from one edge portion 311A.

For example, a method of manufacturing the edge type electron-emitting device shown in FIG. 37C will be described below with reference to FIG. 38 which is a schematic partial end view of a support or the like.

[Step-1200] First, a tungsten film having a thickness of about 0.2 μm is formed on a support 10 made of, for example, glass by sputtering, and the tungsten film is formed by a photolithography technique and a dry etching technique according to a usual procedure. The first gate electrode 13A is formed by patterning the tungsten film. Next, after forming a first insulating layer 12A of SiO _{2 having a} thickness of 0.3 μm on the entire surface, a stripe-shaped conductive material layer for a cathode electrode made of tungsten is formed on the first insulating layer 12A. The formed cathode electrode 311 is formed (see FIG. 38A).

[Step-1210] Thereafter, the second insulating layer 12 of, eg, SiO _{2 having a} thickness of 0.7 μm is formed on the entire surface.
B, and then a stripe-shaped second gate electrode 13B is formed over the second insulating layer 12B (see FIG. 38B). The second gate electrode 13B is made of a gas trapping material.

[Step-1220] Next, after forming a resist layer 90 on the entire surface, a resist opening 90A is formed on the resist layer 90 so as to partially expose the surface of the second gate electrode 13B. The planar shape of the resist opening 90A is rectangular. The long side of the rectangle is approximately 100 μm, and the short side is several μm to 10 μm. Subsequently, the resist opening 90
The second gate electrode 13B exposed at the bottom of
An opening is formed by anisotropic etching by the IE method. Next, the second insulating layer 12B exposed at the bottom of the opening is formed.
Is isotropically etched to form an opening (see FIG. 38C). Since the second insulating layer 12B is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening formed in the second insulating layer 12B recedes from the opening end face of the opening formed in the second gate electrode 13B, and the amount of retreat at this time is controlled by the length of the etching time. be able to.
Here, wet etching is performed until the lower end of the opening formed in the second insulating layer 12B recedes from the opening end surface of the opening formed in the second gate electrode 13B.

Next, the cathode electrode 311 exposed at the bottom of the opening is dry-etched under the condition of using ions as a main etching species. In dry etching using ions as a main etching species, charged particles can be accelerated by applying a bias voltage to an object to be etched or by using an interaction between a plasma and a magnetic field. As the etching proceeds, the processed surface of the object to be etched becomes a vertical wall. However, in this step, the main etching species in the plasma have some incident components having an angle other than perpendicular, and this oblique incident component is also generated by scattering at the end of the opening, so that the cathode is In an exposed surface of the electrode 311, a region which should be originally blocked by the opening and not reachable by the ion,
The main etching species enters with a certain probability. At this time, the main etching species having a smaller incident angle with respect to the normal line of the support 10 have a higher incidence probability, and the main etching species having a larger incident angle have a lower incidence probability.

Therefore, although the position of the upper end of the opening formed in the cathode electrode 311 is substantially aligned with the lower end of the opening formed in the second insulating layer 12B, it is formed in the cathode electrode 311. The position of the lower end of the opening protrudes from the upper end. That is, the thickness of the edge portion 311A of the cathode electrode 311 becomes thinner toward the tip in the protruding direction, and the edge portion 311A is sharpened.
For example, by using SF ₆ as an etching gas, favorable processing of the cathode electrode 311 can be performed.

Next, the first insulating layer 12A exposed at the bottom of the opening formed in the cathode electrode 311 is isotropically etched to form an opening in the first insulating layer 12A. To complete. Here, wet etching using a buffered hydrofluoric acid aqueous solution is performed. First insulating layer 12
The wall surface of the opening formed in A is recessed from the lower end of the opening formed in cathode electrode 311. The amount of retreat at this time can be controlled by the length of the etching time.
When the resist layer 90 is removed after the opening 14 is completed, the structure shown in FIG. 37C can be obtained.

[Electron-Emitting Element-13: Modification of Planar Electron-Emitting Element] [Electron-emitting element-13] is a modification of [Electron-emitting element-6] described above. [Emission device-13] is different from [Emission device-6] in that it has the second configuration. That is, [Emission Device-13]
(A) a band-shaped spacer made of an insulating material provided on the support 10; (B) a band-shaped material layer 413A in which a plurality of openings 414 are formed (at least a part of which is made of a gas trapping material) 413A And a band-shaped material layer 413A is stretched so as to be in contact with the top surface of the spacer and to have the opening 414 above the electron-emitting portion. Have been.
The belt-shaped material layer 413A is fixed to the top surface of the spacer with a thermosetting adhesive (for example, an epoxy-based adhesive).
Alternatively, as shown in FIG. 39, which is a schematic partial cross-sectional view near the end of the support 10, both ends of the strip-shaped material layer 413 </ b> A are fixed to the periphery of the support 10. It can also be structured. More specifically, for example, a protrusion 416 is formed in advance on the periphery of the support 10, and a thin film 417 of the same material as the material forming the belt-shaped material layer 413 </ b> A is formed on the top surface of the protrusion 416. Keep it.
Then, in a state where the strip-shaped material layer 413A is stretched, the thin film 417 is welded to the thin film 417 by using, for example, a laser. The protrusion 416 can be formed, for example, simultaneously with the formation of the spacer.

Hereinafter, an example of a method for manufacturing [Electron Emitting Element-13] will be described.

[Step-1300] First, in the same manner as in [Step-600] of [Electron-emitting device-6], a stripe-shaped conductive material layer for a cathode electrode extending in the first direction is formed on the support 10. The formed cathode electrode 11 (made of Cr) is formed.

[Step-1310] Next, the insulating layer 12 is formed on the entire surface in the same manner as in [Step-610] of [Electron-Emitting Element-6]. After that, an opening 415 is formed in the insulating layer 12 using a lithography technique and an etching technique. Alternatively, for example, when the insulating layer 12 is formed by a screen printing method, the opening 415 may be formed at the same time. Thus, the surface of the cathode electrode 11 corresponding to the electron emission portion can be exposed at the bottom of the opening 415. Here, the insulating layer 12 corresponds to a spacer.

[Step-1320] Thereafter, a strip-shaped material layer 413A having a plurality of openings 414 formed therein is formed.
The insulating layer 1 which is a gate electrode support or a spacer so that the opening 414 is located above the electron-emitting portion.
2 and supported in a second direction different from the first direction.
13A, so that the strip-shaped material layer 41
A gate electrode 413 composed of 3A and having a plurality of openings 414 is located above the electron-emitting portion.

Incidentally, the method of forming such a gate electrode is as follows.
The present invention can be applied to the manufacture of the above-described various electron-emitting devices.

[Electron Emitting Element-14: Modification of Planar Electron Emitting Element] [Electron emitting element-14] is a modification of [Electron emitting element-13]. As shown in a schematic partial cross-sectional view of FIG. 40A, the [electron-emitting device-14] differs from the [electron-emitting device-13] in that a partition wall is provided between the cathode electrodes 11. 412 (corresponding to a spacer) are provided. Cathode electrode 11, band-shaped material layer 413A
FIG. 40B shows a schematic layout of the gate electrode 413 and the partition 412.

Then, the belt-shaped material layer 413A is
2 is fixed to the top surface with a thermosetting adhesive (for example, an epoxy-based adhesive). Alternatively, similarly to the schematic partial sectional view shown in FIG. 39, both ends of the strip-shaped material layer 413A may be fixed to the peripheral portion of the support 10. More specifically, for example, a protrusion 416 is formed in advance on the periphery of the support 10, and a belt-shaped material layer 413 A is formed on the top surface of the protrusion 416.
A thin film 417 made of the same material as the material constituting is formed. Then, in a state where the strip-shaped material layer 413A is stretched, the thin film 417 is welded to the thin film 417 by using, for example, a laser.

[Electron-emitting device-14] can be manufactured, for example, by the manufacturing method described below.

[Step-1400] First, the partition 412 constituting the spacer (gate electrode support) on the support 10
Is formed based on, for example, a sandblast method.

[Step-1410] Thereafter, an electron-emitting portion is formed on the support 10. Specifically, a mask layer made of a resist material is formed on the entire surface by spin coating, and the mask layer in a region where the cathode electrode is to be formed between the partition walls 412 is removed. afterwards,
In the same manner as in [Step-600], a conductive material layer for a cathode electrode made of chromium (Cr) is formed on the entire surface by sputtering, and then the mask layer is removed. Accordingly, the conductive material layer for the cathode electrode formed on the mask layer is also removed, and the cathode electrode 11 functioning as an electron emission portion is left between the partition walls 412.

[Step-1420] Thereafter, a strip-shaped material layer 413 A having a plurality of openings 414 formed therein.
Are arranged in a state supported by the partition 412 as a spacer so that the plurality of openings 414 are located above the electron-emitting portion, whereby the strip-shaped band-shaped material layer 413 is disposed.
A, and a gate electrode 413 having a plurality of openings 414 is located above the electron-emitting portion. The method of disposing the strip-shaped material layer 413A may be as described above.

Incidentally, the method of forming such a gate electrode is as follows.
The present invention can be applied to the manufacture of the above-described various electron-emitting devices.

The planar shape of the opening 414 in the [electron emitting element-13] or [electron emitting element-14] is not limited to a circle. Modifications of the shape of the opening 414 provided in the band-shaped material layer 413A are shown in FIGS.
Examples are shown in (C) and (D).

[Electron-Emitting Element-15: Modification of Manufacturing Method of Spindt-Type Electron-Emitting Element] A modification of the manufacturing method of Spindt-type electron-emitting element described in [Electron-Emitting Element-1] will be described below. 42 to 44, which are schematic partial end views, the Spindt-type electron-emitting device is basically manufactured based on the following steps. That is, (a) a step of forming the cathode electrode 511 on the support 10 (b) a step of forming the insulating layer 512 on the support 10 including the cathode electrode 511 (c) forming the gate electrode 513 on the insulating layer 512 Step of Forming (d) Opening 51 with Cathode Electrode 511 Exposed at Bottom
(E) a step of forming a conductive material layer 521 for forming an electron emission portion on the entire surface including the inside of the opening 514; and (f) a conductive material located at the center of the opening 514. Layer 52
Forming a mask material layer 522 on the conductive material layer 521 so as to shield the region 1 (g). The etching rate of the conductive material layer 521 in the direction perpendicular to the support 10 is The conductive material layer 521 under anisotropic etching conditions in which the etching rate is higher than the etching rate in a direction perpendicular to the body 10.
By etching the mask material layer 522 and
A step of forming an electron emitting portion 15E made of a conductive material layer 521 and having a tip portion having a conical shape on the cathode electrode 511 exposed in the opening 514.

[Step-1500] First, a cathode electrode 5 made of chromium (Cr) is formed on a support 10 having a SiO ₂ layer having a thickness of about 0.6 μm formed on a glass substrate, for example.
11 is provided. Specifically, a cathode conductive material layer made of chromium is deposited on the support 10 by, for example, a sputtering method or a CVD method, and the cathode conductive material layer is patterned to form a plurality of cathode electrodes 511. And a stripe-shaped conductive material layer for a cathode electrode extending in parallel with the column direction. The width of the conductive material layer for the cathode electrode is, for example, 50 μm, and the space between the conductive material layers for the cathode electrode is, for example, 30 μm. After that, the entire surface, specifically, the cathode electrode 511
And Si on the support 10 by a plasma CVD method using TEOS (tetraethoxysilane) as a source gas.
An insulating layer 512 made of O ₂ is formed. The thickness of the insulating layer 512 is about 1 μm. Next, on the entire surface of the insulating layer 512, a gate electrode 513 including a stripe-shaped gate electrode constituent layer extending in parallel to a direction orthogonal to the cathode electrode conductive material layer is formed.

Next, an opening 514 penetrating the gate electrode forming layer and the insulating layer 512 is formed in the electron emission region of the cathode electrode conductive material layer and the gate electrode forming layer, that is, in one pixel region. The planar shape of the opening 514 is, for example, a circle having a diameter of 0.3 μm. Normally, several hundred to one thousand openings 514 are formed in one pixel region (one electron emission region). In order to form the opening 514, first, an opening 514 is formed in the gate electrode forming layer using a resist layer formed by ordinary photolithography as a mask, and then the opening 514 is formed in the insulating layer 512. I do. After the RIE, the resist layer is removed by ashing (see FIG. 42A).

[Step-1510] Next, the adhesion layer 5 is formed on the entire surface.
20 is formed by a sputtering method (see FIG. 42B). The adhesion layer 520 is formed on the insulating layer 512 exposed on the non-formed portion of the gate electrode forming layer and the side wall surface of the opening 514.
And a conductive material layer 521 that is entirely formed in the next step. Assuming that the conductive material layer 521 is formed of tungsten, an adhesion layer 520 made of tungsten is formed to a thickness of 0.07 μm by DC sputtering.

[Step-1520] Next, a conductive material layer 521 for forming an electron-emitting portion having a thickness of about 0.6 μm and made of tungsten is formed on the entire surface including the inside of the opening 514 by hydrogen reduction low pressure CVD. FIG. 43A). On the surface of the formed conductive material layer 521, a concave portion 521A reflecting a step between the upper end surface and the bottom surface of the opening 514 is formed.

[Step-1530] Next, a mask material layer 522 is formed so as to shield a region (specifically, recess 521A) of conductive material layer 521 located at the center of opening 514. Specifically, first, a resist layer having a thickness of 0.35 μm is formed as a mask material layer 522 on the conductive material layer 521 by a pin coating method (see FIG. 43B). The mask material layer 522 absorbs the concave portion 521A of the conductive material layer 521 and has a substantially flat surface. Next, the mask material layer 522 is etched by RIE using an oxygen-based gas. This etching is completed when the flat surface of the conductive material layer 521 is exposed. As a result, the mask material layer 522 remains so as to bury the recess 521A of the conductive material layer 521 flat (see FIG. 44A).

[Step-1540] Next, the conductive material layer 52
1, the mask material layer 522, and the adhesion layer 520 are etched to form a conical electron emission portion 15 </ b> E (see FIG. 44B). The etching of these layers is performed under anisotropic etching conditions in which the etching rate of the conductive material layer 521 is higher than the etching rate of the mask material layer 522. The etching conditions are illustrated in Table 2 below.

[Table 2] [Etching conditions for conductive material layer 521 etc.] SF ₆ flow rate: 150 SCCM O ₂ flow rate: 30 SCCM Ar flow rate: 90 SCCM Pressure: 35 Pa RF power: 0.7 kW (13.56 MHz)

[Step-1550] Thereafter, the insulating layer 51 is formed inside the opening 514 under isotropic etching conditions.
When the side wall surface of the opening 514 provided on the second side is retracted,
The electron-emitting device shown in FIG. 45 is completed. The isotropic etching can be performed by dry etching using radicals as a main etching species, such as chemical dry etching, or wet etching using an etchant. As an etching solution, for example, 4
A 9% hydrofluoric acid aqueous solution and a 1: 100 (volume ratio) mixed solution of pure water can be used.

Here, the mechanism of forming the electron-emitting portion 15E in [Step-1540] will be described with reference to FIG. FIG. 46A is a schematic diagram showing how the surface profile of the object to be etched changes at regular time intervals as the etching proceeds.
FIG. 6B is a graph showing the relationship between the etching time and the thickness of the object to be etched at the center of the opening 514. The thickness of the mask material layer in the center of the opening 514 h _p, the height of the electron-emitting portion 15E at the center of the opening 514 and h _e.

Under the etching conditions shown in Table 2, the etching rate of the conductive material layer 521 is naturally higher than the etching rate of the mask material layer 522 made of a resist material. In a region where the mask material layer 522 does not exist, the conductive material layer 521 starts to be etched immediately, and the surface of the object to be etched quickly descends. On the other hand, in the region where the mask material layer 522 exists, the etching of the conductive material layer 521 thereunder does not start unless the mask material layer 522 is removed first. rate of decrease in the thickness of the object to be etched is slow (h _p decreasing segment), the first time when the mask material layer 522 disappears, as in the region where the rate of decrease in the thickness of the object to be etched is not present in the mask material layer 522 faster (h _e decreasing segment). The start time of the _hp reduction section is the latest at the center of the opening 514 where the thickness of the mask material layer 522 is maximum, and is earlier toward the periphery of the thin opening 514 of the mask material layer 522. Thus, a conical electron emitting portion 15E is formed.

Mask material layer 522 made of resist material
The ratio of the etching rate of the conductive material layer 521 to the etching rate of the resist will be referred to as “resist selectivity”. The fact that this resist-to-resist selectivity is an important factor in determining the height and shape of the electron-emitting portion 15E will be described with reference to FIG. 47A shows a case where the resist selection ratio is relatively small, and FIG. 47C shows a case where the resist selection ratio is relatively large, and FIG. In this case, the shape of the electron-emitting portion 15E is shown. The larger the selectivity to resist, the larger the mask material layer 5
Since the film thickness of the conductive material layer 521 becomes more severe than that of the film 22, it can be seen that the electron emission portion 15 </ b> E is higher and sharper. The resist selectivity decreases as the ratio of O ₂ flow to SF ₆ flow increases. Also, when using an etching apparatus that can change the incident energy of ions by using a substrate bias, it is possible to increase the RF bias power or reduce the frequency of the AC power supply for bias application to select the resist. The ratio can be reduced. The value of the resist selectivity is selected to be 1.5 or more, preferably 2 or more, and more preferably 3 or more.

In the above-described etching, it is naturally necessary to secure a high selectivity with respect to the gate electrode 513 and the cathode electrode 511, but there is no problem under the conditions shown in Table 2. This is because the material constituting the gate electrode 513 and the cathode electrode 511 is hardly etched by the fluorine-based etching species, and is approximately 10% under the above conditions.
This is because the above etching selectivity can be obtained.

[Electron-Emitting Element-16: Modification of Manufacturing Method of Spindt-Type Electron-Emitting Element] The manufacturing method of [Electron-Emitting Element-16] is a modification of the manufacturing method of [Electron-Emitting Element-15]. In this manufacturing method, the region of the conductive material layer shielded by the mask material layer can be made narrower than in the manufacturing method of [Electron Emitting Element-15]. That is, in the manufacturing method of the Spindt-type electron-emitting device in [Electron-emitting device-16], the columnar portion and the enlarged portion communicating with the upper end of the columnar portion are reflected by reflecting the step between the upper end surface and the bottom surface of the opening. A substantially funnel-shaped concave portion comprising a portion is formed on the surface of the conductive material layer,
In the step (f), after forming a mask material layer on the entire surface of the conductive material layer, the mask material layer and the conductive material layer are removed in a plane parallel to the surface of the support to form a mask on the columnar portion. Leave the material layer.

Hereinafter, a method of manufacturing a Spindt-type electron-emitting device in [Electron-emitting device-16] will be described with reference to FIGS. 48 to 50 which are schematic partial end views of a support and the like. In the middle, the gate electrode 513 is represented by one layer.

[Step-1600] First, the cathode electrode 511 is formed on the support 10. The conductive material layer for the cathode electrode including the cathode electrode 511 is formed of, for example, a TiN layer (0.1 μm in thickness), a Ti layer (5 nm in thickness), an Al—Cu layer (0.4 μm in thickness), Layer (5 nm thick), TiN layer (0.02 μm thick) and T
An i-layer (0.02 μm) is laminated in this order to form a laminated film, and then the laminated film is formed by patterning in a stripe shape. In the drawing, the cathode electrode 511 is represented by a single layer. Next, an insulating layer 512 having a thickness of 0.7 μm is formed on the entire surface, specifically, on the support 10 and the cathode electrode 511.
Is formed based on a plasma CVD method using TEOS (tetraethoxysilane) as a source gas. Next, a stripe-shaped gate electrode constituent layer including the gate electrode 513 is formed over the insulating layer 512.

Further, an etching stopper layer 523 of, eg, SiO ₂ and having a thickness of 0.2 μm is formed on the entire surface. The etching stop layer 523 is not an indispensable member for the function of the electron-emitting device, and serves to protect the gate electrode 513 when the conductive material layer 521 is etched in a later step. Note that when the gate electrode 513 can have sufficiently high etching resistance with respect to the etching conditions of the conductive material layer 521, the etching stop layer 523 may be omitted. Thereafter, the etching stop layer 52 is formed by the RIE method.
3. An opening 514 that penetrates through the gate electrode 513 and the insulating layer 512 and exposes the cathode electrode 511 at the bottom is formed. Thus, the state shown in FIG. 48A is obtained.

[Step-1610] Then, an adhesion layer 520 made of, for example, tungsten having a thickness of 0.03 μm is formed on the entire surface including the inside of the opening 514 (see FIG. 48B). Next, a conductive material layer 521 for forming an electron-emitting portion is formed on the entire surface including the inside of the opening 514. However, the conductive material layer 521 in the [electron-emitting device-16] is formed so that a concave portion 521A deeper than the concave portion 521A described in the method for manufacturing the [electron-emitting device-15] is formed on the surface. Select the thickness. That is, by appropriately setting the thickness of the conductive material layer 521, the columnar portion 521B and the enlarged portion communicating with the upper end of the columnar portion 521B are reflected by reflecting the step between the upper end surface and the bottom surface of the opening portion 514. 521C can be formed on the surface of the conductive material layer 521.

[Step-1620] Next, the conductive material layer 52
1 by an electroless plating method, for example.
A mask material layer 522 made of copper (Cu) having a thickness of 5 μm is formed (see FIG. 49A). The electroless plating conditions are illustrated in Table 3 below.

[0277] [Table 3] Plating liquid: copper sulfate _{(CuSO 4 · 5H 2 O)} 7g / liter Formalin (37% HCHO) 20ml / l sodium hydroxide (NaOH) 10 g / l sodium potassium tartrate 20 g / l plating bath temperature ： 50 ℃

[Step-1630] Thereafter, the mask material layer 522 and the conductive material layer 521 are removed in a plane parallel to the surface of the support 10 so that the mask material layer 522 is left on the columnar portion 521B ( (See FIG. 49 (B)). This removal can be performed by, for example, a chemical mechanical polishing method (CMP method).

[Step-1640] Next, the conductive material layer 52
1 and the etching rate of the adhesion layer
The conductive material layer 521, the mask material layer 522, and the adhesion layer 520 are etched under anisotropic etching conditions in which the etching rate is higher than the etching rate of Step 2. As a result, the opening 514
An electron emitting portion 15E having a conical shape is formed therein (see FIG. 50A). If the mask material layer 522 remains at the tip of the electron emitting portion 15E, the mask material layer 522 can be removed by wet etching using a dilute hydrofluoric acid aqueous solution.

[Step-1650] Next, when the side wall surface of the opening 514 provided in the insulating layer 512 is receded inside the opening 514 under isotropic etching conditions, FIG.
The electron-emitting device shown in FIG. The isotropic etching may be the same as that described in the method for manufacturing the [electron-emitting device-15].

By the way, in the electron-emitting portion 15E formed by the method for manufacturing [electron-emitting device-16], the electron-emitting portion 1E formed by the method for manufacturing [electron-emitting device-15] is used.
A sharper conical shape is achieved as compared to 5E. This depends on the shape of the mask material layer 522 and the mask material layer 522.
Due to the difference in the ratio of the etching rate of the conductive material layer 521 to the etching rate of the conductive material layer 521. This difference is illustrated in FIG.
1 will be described. FIG. 51 is a diagram showing how the surface profile of an object to be etched changes at regular time intervals. FIG. 51A shows a case where a mask material layer 522 made of copper is used. B) shows the case where a mask material layer 522 made of a resist material is used, respectively. For the sake of simplicity, it is assumed that the etching rate of the conductive material layer 521 is equal to the etching rate of the adhesion layer 520, and the illustration of the adhesion layer 520 is omitted in FIG.

In the case where the mask material layer 522 made of copper is used (see FIG. 51A), the etching rate of the mask material layer 522 is sufficiently lower than the etching rate of the conductive material layer 521. Inside the mask material layer 5
As a result, the electron emission portion 15E having a sharp tip can be formed. On the contrary,
In the case where the mask material layer 522 made of a resist material is used (see FIG. 51B), the etching rate of the mask material layer 522 is not so slow as compared with the etching rate of the conductive material layer 521. The mask material layer 522 is likely to disappear, and therefore, the conical shape of the electron emission portion 15E after the disappearance of the mask material layer tends to be blunted.

The mask material layer 522 remaining on the columnar portion 521B has a small thickness even if the depth of the columnar portion 521B slightly changes.
There is also a merit that the shape of the electron emitting portion 15E is hard to change. That is, the depth of the columnar portion 521B is
However, since the width of the columnar portion 521B is substantially constant irrespective of the depth, the width of the mask material layer 522 is also substantially constant, and the finally formed electron emission portion 15E There is no significant difference in the shape of the. On the other hand, in the mask material layer 522 remaining in the recess 521A, the width of the mask material layer changes depending on whether the recess 521A is shallow or deep.
As the thickness of the mask material layer 522 is smaller and the thickness of the mask material layer 522 is smaller, the blunting of the conical shape of the electron emission portion 15E starts earlier. The electron emission efficiency of the electron-emitting device is determined by the potential difference between the gate electrode and the cathode electrode, the distance between the gate electrode and the cathode electrode, the work function of the constituent materials of the electron-emitting portion,
It also changes depending on the shape of the tip of the electron emitting portion. Therefore, it is preferable to select the shape of the mask material layer and the etching rate as described above as necessary.

[Electron-Emitting Element-17: Modification of Manufacturing Method of Spindt-Type Electron-Emitting Element] It is a deformation. In the method of manufacturing [Electron-Emitting Element-17],
In the step (e), a substantially funnel-shaped concave portion including a columnar portion and an enlarged portion communicating with the upper end of the columnar portion is formed on the surface of the conductive material layer by reflecting a step between the upper end surface and the bottom surface of the opening. In step (f), after forming a mask material layer on the entire surface of the conductive material layer, the mask material layer on the conductive material layer and in the enlarged portion is removed to leave the mask material layer on the columnar portion. Hereinafter, a method for manufacturing a Spindt-type electron-emitting device in [Electron-emitting device-17] will be described with reference to FIGS. 52 and 53 which are schematic partial end views of a support and the like.

[Step-1700] First, FIG.
Up to the formation of the mask material layer 522 shown in (1) to [Step-1600] to [Step-
1620], only the mask material layer 522 on the conductive material layer 521 and in the enlarged portion 521C is removed, thereby leaving the mask material layer 522 on the columnar portion 521B (see FIG. 52A). . At this time, for example, by performing wet etching using a diluted hydrofluoric acid aqueous solution, only the mask material layer 522 made of copper can be selectively removed without removing the conductive material layer 521 made of tungsten. The height of the mask material layer 522 remaining in the columnar portion 521B depends on the etching time. This etching time is not so long as the portion of the mask material layer 522 embedded in the enlarged portion 521C is sufficiently removed. Does not require strictness. This is because the discussion regarding the height of the mask material layer 522 is substantially the same as the discussion regarding the shallow depth of the columnar portion 521B described above with reference to FIG. This is because the shape of the formed electron-emitting portion 15E is not significantly affected.

[Step-1710] Next, the conductive material layer 52
1, the mask material layer 522, and the adhesion layer 520 are etched in the same manner as in the method of manufacturing [Electron-Emitting Element-16].
An electron emitting portion 15E as shown in FIG. 52B is formed. As a matter of course, the electron emitting portion 15E may have a conical shape as shown in FIG.
FIG. 52B shows a modification in which only the tip has a conical shape. Such a shape may occur when the height of the mask material layer 522 embedded in the columnar portion 521B is low or the etching rate of the mask material layer 522 is relatively high. No problem.

[Step-1720] Thereafter, the insulating layer 512 is formed inside the opening 514 under isotropic etching conditions.
When the side wall surface of the opening 514 provided in the substrate is retracted, the electron-emitting device shown in FIG. 53 is completed. The isotropic etching may be similar to that described in the method for manufacturing [Electron-emitting device-15].

[Electron Emitting Element-18: Modification of Manufacturing Method of Spindt Type Electron Emitting Element] The manufacturing method of [Electron Emitting Element-18] is a modification of the manufacturing method of [Electron Emitting Element-15]. [Electron Emitting Element-1
8] is a schematic partial end view shown in FIG. The difference between [Emission Element-18] and [Emission Element-15] is that
The point that the electron emission portion is constituted by the base portion 530 and the conical electron emission portion 15E laminated on the base portion 530. Here, the base 530 and the electron emitting portion 15E are made of different conductive materials. Specifically, the base 530
Is a member for adjusting the distance between the electron-emitting portion 15E and the opening end of the gate electrode 513, has a function as a resistor layer, and is made of a polysilicon layer containing impurities. ing. The electron emission portion 15E is made of tungsten, and has a conical shape, more specifically, a conical shape. Note that an adhesion layer 520 made of TiN is formed between the base 530 and the electron-emitting portion 15E. Note that the adhesion layer 520 is not an essential component for the function of the electron-emitting portion, but is formed for manufacturing reasons. The opening 514 is formed by the insulating layer 512 being cut from immediately below the gate electrode 513 to the upper end of the base 530.

The method of manufacturing [Electron-Emitting Element-18] will now be described with reference to FIGS.
This will be described with reference to FIG.

[Step-1800] First, the steps up to the formation of the opening 514 are performed in the same manner as in [Step-1500] of the method for manufacturing the [electron-emitting device-15]. Subsequently, a conductive material layer 530A for forming a base is formed on the entire surface including the inside of the opening 514. The conductive material layer 530A also functions as a resistor layer,
It is composed of a polysilicon layer and can be formed by a plasma CVD method. Next, a flattening layer 531 made of a resist layer is formed on the entire surface by a spin coating method so that the surface is substantially flat (see FIG. 55A). Next, the flattening layer 531 and the conductive material layer 530A are both etched under the condition that the etching rates are substantially equal to each other, and the bottom of the opening 514 is filled with a base 530 having a flat upper surface (see FIG. 55B). ). Etching can be performed by an RIE method using an etching gas containing a chlorine-based gas and an oxygen-based gas. Since the etching is performed after the surface of the conductive material layer 530A is once flattened by the flattening layer 531, the upper surface of the base 530 becomes flat.

[Step-1810] Next, an adhesion layer 520 is formed on the entire surface including the remaining portion of the opening 514, and a conductive material layer 521 for forming an electron emission portion is further formed on the entire surface including the remaining portion of the opening 514. The remaining portion of the opening 514 is formed into a conductive material layer 5.
21 (see FIG. 56 (A)). Adhesion layer 520
Is a 0.07 μm thick T formed by sputtering.
The conductive material layer 521 is an iN layer and a 0.6 μm-thick tungsten layer formed by a low-pressure CVD method. A recess 521A is formed on the surface of the conductive material layer 521, reflecting a step between the upper end surface and the bottom surface of the opening 514.

[Step-1820] Next, the conductive material layer 52
A mask material layer 522 made of a resist layer is formed on the entire surface of the substrate 1 by spin coating so that the surface is substantially flat (see FIG. 56B). The mask material layer 522 has a flat surface by absorbing the recess 521A on the surface of the conductive material layer 521. Next, the mask material layer 522 is etched by an RIE method using an oxygen-based gas (see FIG. 57A). This etching ends when the flat surface of the conductive material layer 521 is exposed. As a result, the mask material layer 522 is left flat in the recess 521A of the conductive material layer 521, and the mask material layer 522 is formed so as to shield the region of the conductive material layer 521 located at the center of the opening 514. I have.

[Step-1830] Next, the conductive material layer 521, the mask material layer 522, and the adhesion layer 520 are all etched in the same manner as in [Step-1540] of the method for manufacturing the actual [electron emitting element-15]. Based on the mechanism described above, the electron emitting portion 15E having a conical shape according to the magnitude of the resist selectivity and the adhesion layer 520 are formed, and the electron emitting portion is completed (see FIG. 57B). Thereafter, when the side wall surface of the opening 514 provided in the insulating layer 512 inside the opening 514 is receded, the electron-emitting device shown in FIG. 54 can be obtained.

[Electron-Emitting Element-19: Modification of Manufacturing Method of Spindt-Type Electron-Emitting Element] The manufacturing method of [Electron-Emitting Element-19] is a modification of the manufacturing method of [Electron-Emitting Element-16]. [Electron Emitting Element-1
9] is a schematic partial end view shown in FIG.
[Electron-emitting device-19] is different from [Electron-emitting device-16] in that the electron-emitting portion has a base 530 and a conical shape laminated on the base 530, as in [Electron-emitting device-18]. This is in that it is composed of the electron emission section 15E. Here, the base 530 and the electron emitting portion 15E are made of different conductive materials. Specifically, the base 530 is a member for adjusting the distance between the electron emitting portion 15E and the opening end of the gate electrode 513, has a function as a resistor layer, and contains impurities. And a polysilicon layer. The electron emission portion 15E is made of tungsten, and has a conical shape, more specifically, a conical shape. In addition, between the base 530 and the electron-emitting portion 15E,
An adhesion layer 520 made of TiN is formed. Note that the adhesion layer 520 is not an essential component for the function of the electron-emitting portion, but is formed for manufacturing reasons. Insulating layer 512
Is formed from immediately below the gate electrode 513 to the upper end of the base 530 to form an opening 514.

A method for manufacturing [Electron-emitting device-19] will be described below with reference to FIGS. 58 and 59 which are schematic partial end views of a support and the like.

[Step-1900] First, the steps up to the formation of the opening 514 are performed in the same manner as in [Step-1500] of the method for manufacturing the [electron-emitting device-15]. Next, a conductive material layer for forming a base is formed over the entire surface including the inside of the opening 514, and the conductive material layer is etched, so that the base 530 filling the bottom of the opening 514 can be formed. Although the illustrated base 530 has a flattened surface, the surface may be concave. The base 530 having a flattened surface can be formed by the same process as [Step-1800] in the method for manufacturing [Electron-Emitting Element-18]. Further, over the entire surface including the remaining portion of the opening 514,
Adhesion layer 520 and conductive material layer 52 for forming electron-emitting portions
1 are sequentially formed. At this time, a substantially funnel-shaped concave portion 521A including a columnar portion 521B reflecting a step between the upper end surface and the bottom surface of the remaining portion of the opening 514 and an enlarged portion 521C communicating with the upper end of the columnar portion 521B is formed. The thickness of the conductive material layer 521 is selected so as to be generated on the surface of 521. Next, a mask material layer 522 is formed over the conductive material layer 521.
To form This mask material layer 522 is formed using, for example, copper. FIG. 58A shows a state in which the processes up to this point have been completed.

[Step-1910] Next, the mask material layer 5
By removing the layer 22 and the conductive material layer 521 in a plane parallel to the surface of the support 10, the mask material layer 522 is left on the columnar portion 521B (see FIG. 58B). This removal is performed in [Step-1630] of [Electron-emitting device-16].
Similarly to the above, the polishing can be performed by a chemical mechanical polishing method (CMP method).

[Step-1920] Next, the conductive material layer 52
1, the mask material layer 522, and the adhesion layer 520 are etched to form the electron emission portion 15 </ b> E having a conical shape corresponding to the magnitude of the resist selectivity based on the mechanism described above. Etching of these layers can be performed by the method described in [Emission Device-1
6] can be carried out in the same manner as in [Step-1640] of the production method. The electron-emitting portion 15E and the base 530, and the adhesion layer 520 remaining between the electron-emitting portion 15E and the base 530.
Thus, an electron emission portion is formed. The electron emission part is
Of course, the whole may have a conical shape.
(A) shows a state in which a part of the base 530 remains so as to bury the bottom of the opening 514. Such a shape is
This may occur when the height of the mask material layer 522 embedded in the columnar portion 521B is low or the etching rate of the mask material layer 522 is relatively high, but this does not hinder the function as the electron emission portion.

[Step-1930] Thereafter, the insulating layer 512 is formed inside the opening 514 under isotropic etching conditions.
When the side wall surface is retracted, the electron-emitting device shown in FIG. 59B is completed. The isotropic etching conditions are:
The method may be the same as that described in the method for manufacturing [Electron-emitting device-15].

[Electron-Emitting Element-20: Modification of Manufacturing Method of Spindt-Type Electron-Emitting Element] It is a deformation. [Electron-emitting device-20]
7] is that the electron-emitting portion is different from the [electron-emitting device-1].
8], is composed of a base 530 and a conical electron emitting portion 15E stacked on the base 530. Hereinafter, a method for manufacturing the Spindt-type electron-emitting device of [Electron-emitting device-20] will be described with reference to FIG. 60 which is a schematic partial end view of a support or the like.

[Step-2000] The steps up to the formation of the mask material layer 522 are performed in the same manner as in [Step-1900] of the method for manufacturing the [electron-emitting device-19]. After that, the conductive material layer 521
By removing only the mask material layer 522 in the upper portion and the enlarged portion 521C, the mask material layer 522 is formed in the columnar portion 521B.
(See FIG. 60). For example, by performing wet etching using a diluted hydrofluoric acid aqueous solution, only the mask material layer 522 made of copper can be selectively removed without removing the conductive material layer 521 made of tungsten. Subsequent processes such as the etching of the conductive material layer 521 and the mask material layer 522 and the isotropic etching of the insulating layer 512 can be performed in the same manner as in the method of manufacturing [Electron-Emitting Element-19].

The present invention has been described based on the embodiments of the present invention, but the present invention is not limited to these embodiments. The structures, configurations, and manufacturing methods of the display panel and the flat display device described in the embodiments of the invention are merely examples, and can be appropriately changed.

Further, various materials used in the manufacture of the electron-emitting device are also examples, and can be appropriately changed. In the electron-emitting device, a configuration in which one electron-emitting portion corresponds to one opening is described. However, depending on the structure of the electron-emitting device, a configuration in which one opening corresponds to a plurality of electron-emitting portions. Alternatively, a mode in which one electron-emitting portion corresponds to a plurality of openings may be adopted. Alternatively, a plurality of openings may be provided in the gate electrode forming layer, one opening communicating with the plurality of openings in the insulating layer may be provided, and one or a plurality of electron-emitting portions may be provided.

Further, the electron emission region can be constituted by an element commonly called a surface conduction electron emission element. This surface-conduction electron-emitting device is composed of, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide (PdO) on a glass substrate. ), A pair of electrodes having a very small area and arranged at a predetermined interval (gap) are formed in a matrix. A carbon thin film is formed on each electrode. Then, a row-direction wiring is connected to one electrode of the pair of electrodes, and a column-direction wiring is connected to the other electrode of the pair of electrodes. By applying a voltage to the pair of electrodes, an electric field is applied to the carbon thin film facing each other across the gap,
Electrons are emitted from the carbon thin film. By causing such electrons to collide with the phosphor layer on the second panel (anode panel), the phosphor layer is excited and emits light, and a desired image can be obtained.

[0305]

According to the present invention, since the dummy electron emission region for emitting electrons is provided independently of the electron emission region, the dummy electron emission region does not completely depend on the operation of the electron emission region. Is activated to emit electrons from the dummy electron-emitting device and collide with the dummy gate electrode, whereby the gas trapping material constituting the dummy gate electrode can be activated. Therefore, the released gas can be reliably and stably captured by the gas capturing material,
The degree of vacuum of the flat display device can be reliably maintained. As a result, it is possible to prevent discharge from occurring in the flat display device and to stabilize the radiation current, and to achieve a longer life of the flat display device. Further, no extra gas is released when the conventional getter is activated.

[Brief description of the drawings]

FIG. 1 is a schematic partial end view of a flat panel display according to Embodiment 1 of the present invention.

FIG. 2 is a schematic layout diagram of components of a display panel according to Embodiment 1 of the present invention.

FIG. 3 is an exploded conceptual view of the flat display device according to the first embodiment of the present invention;

FIG. 4 is an exploded perspective view of a part of the flat display device according to the first embodiment of the present invention;

FIG. 5 is an enlarged schematic end view of an electron emitting portion and a dummy electron emitting portion.

FIG. 6 is an enlarged schematic end view of a modified example of an electron emitting portion and a dummy electron emitting portion.

FIG. 7 is an enlarged schematic end view of a modified example of the electron emission section and the dummy electron emission section.

FIG. 8 is a schematic layout diagram of components of a display panel according to Embodiment 2 of the present invention.

FIG. 9 is an exploded perspective view of a part of the flat display device according to the second embodiment of the invention;

FIG. 10 is a schematic layout diagram of components of a display panel according to Embodiment 3 of the present invention.

FIG. 11 is a schematic layout diagram of components of a display panel according to Embodiment 4 of the present invention.

FIG. 12 is a schematic layout diagram of components of a display panel according to Embodiment 5 of the present invention.

FIG. 13 is a view illustrating a fifth embodiment of the present invention and a first embodiment of the present invention;
FIG. 3 is a schematic layout diagram of components of a display panel obtained by combining the configurations described in FIG.

FIG. 14 is a view illustrating a fifth embodiment of the present invention and a second embodiment of the present invention;
FIG. 3 is a schematic layout diagram of components of a display panel obtained by combining the configurations described in FIG.

FIG. 15 is a schematic layout diagram of components of a display panel in which the configurations described in the fifth embodiment, the first embodiment, and the third embodiment of the invention are combined.

FIG. 16 is a schematic partial end view of a support and the like for explaining a method for manufacturing an electron-emitting device ([electron-emitting device-1]) having a first configuration including a Spindt-type electron-emitting device. .

FIG. 17 is a schematic view of a support or the like for explaining a method of manufacturing an electron-emitting device ([Electron-emitting device-1]) having a first configuration composed of a Spindt-type electron-emitting device, following FIG. 16; It is a partial end view.

FIG. 18 is a schematic partial end view of a support and the like for explaining an example of a method for manufacturing a second panel (anode panel).

FIG. 19 is a schematic partial end view of a substrate or the like for describing a method of manufacturing an electron-emitting device ([electron-emitting device-2]) having a first structure including a crown-type electron-emitting device.

20 is a schematic part of a substrate and the like for explaining a method of manufacturing an electron-emitting device having a first structure including a crown-type electron-emitting device ([electron-emitting device-2]), following FIG. 19; It is an end elevation.

FIG. 21 is a schematic part of a substrate and the like for explaining a method of manufacturing an electron-emitting device having a first structure including a crown-type electron-emitting device ([electron-emitting device-2]), following FIG. 20; It is an end view and a partial perspective view.

FIG. 22 is a schematic partial cross-sectional view of a substrate or the like for describing a method for manufacturing an electron-emitting device ([electron-emitting device-3]) having a first structure including a flat-type electron-emitting device.

FIG. 23 is a schematic partial cross-sectional view of a substrate or the like for describing a method for manufacturing an electron-emitting device ([electron-emitting device-4]) having a first structure including a flat electron-emitting device.

FIG. 24 is a schematic partial end view of a substrate or the like for describing a method of manufacturing an electron-emitting device having a first structure including a flat-type electron-emitting device ([Electron-emitting device-5]).

FIG. 25 is a schematic part of a substrate and the like for explaining a method of manufacturing an electron-emitting device having a first structure including a flat-type electron-emitting device ([Electron-emitting device-5]), following FIG. 24; It is an end elevation.

FIG. 26 is a schematic partial cross-sectional view of a substrate or the like for describing a method for manufacturing an electron-emitting device ([Electron-emitting device-6]) having a second structure including a flat-type electron-emitting device.

FIG. 27 is a schematic partial cross-sectional view of a modification of the electron-emitting device having the second structure composed of the flat-type electron-emitting device.

FIG. 28 is a schematic partial cross-sectional view of another modified example of the electron-emitting device having the second structure including the flat-type electron-emitting device.

FIG. 29 is a schematic partial end view of a substrate and the like for explaining a method for manufacturing an electron-emitting device ([Electron-emitting device-8]) having a second structure composed of a planar electron-emitting device;
It is a partial perspective view.

30 is a schematic part of a substrate or the like for explaining a method of manufacturing an electron-emitting device having a second structure composed of a planar electron-emitting device ([electron-emitting device-8]), following FIG. 29; It is an end view and a partial perspective view.

FIG. 31 is a schematic part of a substrate and the like for explaining a method of manufacturing an electron-emitting device having a second structure including a planar electron-emitting device ([Electron-emitting device-8]), following FIG. 30; It is an end view and a partial perspective view.

FIG. 32 is a schematic part of a substrate and the like for explaining a method of manufacturing an electron-emitting device having a second structure composed of a planar electron-emitting device ([electron-emitting device-8]), following FIG. 31; It is sectional drawing.

FIG. 33 is a schematic partial cross-sectional view of a substrate or the like for describing a method for manufacturing an electron-emitting device ([electron-emitting device-9]) having a second structure including a flat-type electron-emitting device.

FIG. 34 is a schematic partial end view of a substrate or the like for describing a method of manufacturing an electron-emitting device ([electron-emitting device-10]) having a second structure composed of a flat-type electron-emitting device.

FIG. 35 is a schematic partial end view of a substrate or the like for describing a method of manufacturing an electron-emitting device ([electron-emitting device-11]) having a second structure composed of a flat-type electron-emitting device.

36 is a schematic part of a substrate or the like for explaining a method of manufacturing an electron-emitting device ([electron-emitting device-11]) having a second structure composed of a planar electron-emitting device, following FIG. 35; It is an end elevation.

FIG. 37 is a schematic partial cross-sectional view of an electron-emitting device ([electron-emitting device-12]) having a third structure including an edge-type electron-emitting device.

FIG. 38 is a schematic partial end view of a substrate or the like for describing a method for manufacturing an electron-emitting device ([electron-emitting device-12]) having a third structure composed of an edge-type electron-emitting device.

FIG. 39 is a schematic partial end view of a substrate or the like for describing a method for manufacturing an electron-emitting device having the second configuration ([electron-emitting device-13]).

FIG. 40 is a schematic partial end view of a substrate or the like for describing another method for manufacturing an electron-emitting device having the second configuration ([electron-emitting device-14]).

FIG. 41 is a schematic plan view showing a plurality of openings of a gate electrode.

42 is a schematic partial end view of a support and the like for describing a method of manufacturing the Spindt-type electron-emitting device ([electron-emitting device-15]) shown in FIG. 45.

43 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type electron-emitting device ([electron-emitting device-15]) shown in FIG. 45, following FIG. 42;

44 is a schematic partial end view of a support and the like for explaining the method for manufacturing the Spindt-type electron-emitting device ([electron-emitting device-15]) shown in FIG. 45, following FIG. 43;

FIG. 45 shows a Spindt-type electron-emitting device ([electron-emitting device-
15]) is a schematic partial end view.

FIG. 46 is a view for explaining a mechanism for forming a conical electron emitting portion.

FIG. 47 is a view schematically showing a relationship between a resist selectivity and the height and shape of an electron-emitting portion.

FIG. 48 shows a Spindt-type electron-emitting device ([electron-emitting device-
16] is a schematic partial end view of a support and the like for describing the manufacturing method of [16]).

FIG. 49 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type electron-emitting device ([electron-emitting device-16]), following FIG. 48;

50 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type electron-emitting device ([Electron-emitting device-16]), following FIG. 49;

FIG. 51 is a diagram showing how a surface profile of an object to be etched changes at regular intervals.

FIG. 52 is a Spindt-type electron-emitting device ([electron-emitting device—
17] is a schematic partial end view of a support and the like for describing the manufacturing method of 17)).

FIG. 53 is a schematic partial end view of the support and the like for describing the method for manufacturing the Spindt-type electron-emitting device ([Electron-emitting device-17]), following FIG. 52;

FIG. 54 shows a Spindt-type electron-emitting device ([electron-emitting device-
18]) is a schematic partial end view.

FIG. 55 shows a Spindt-type electron-emitting device ([electron-emitting device-
FIG. 18] is a schematic partial end view of a support or the like for describing the manufacturing method of [18]).

FIG. 56 is a schematic partial end view of the support and the like for explaining the manufacturing method of the Spindt-type electron-emitting device ([Electron-emitting device-18]), following FIG. 55;

FIG. 57 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type electron-emitting device ([Electron-emitting device-18]), following FIG. 56;

FIG. 58 shows a Spindt-type electron-emitting device ([electron-emitting device-
FIG. 19] is a schematic partial end view of a support or the like for describing the manufacturing method of [19]).

FIG. 59 is a schematic partial end view of the support and the like for explaining the method for manufacturing the Spindt-type electron-emitting device ([Electron-emitting device-19]), following FIG. 58;

FIG. 60 shows a Spindt-type electron-emitting device ([electron-emitting device-
FIG. 20] is a schematic partial end view of a support or the like for describing the manufacturing method of [20]).

FIG. 61 is an exploded conceptual view of a conventional flat display device.

FIG. 62 is a schematic partial end view showing a configuration example of a conventional flat display device in which cold cathode field emission devices are arranged in an effective area of a first panel.

63 is a conceptual layout view of each component in the conventional first panel shown in FIG. 62.

FIG. 64 shows a first example of the conventional flat panel display shown in FIG. 62;
FIG. 3 shows a schematic exploded perspective view of a part of the panel and the second panel.

FIG. 65 is a diagram schematically illustrating an example of a pressure distribution in a vacuum layer when gas molecules are emitted from an electron emission unit.

[Explanation of symbols]

P ₁ ... first panel (display panel), P ₂ ... second
Panel, 10 ... support, 11, 211, 311 ...
.Cathode electrode, 211A ... raised portion, 211B
Recess, 211C tip, 11A fine unevenness, 11B coating layer, 12, 12A, 12B, 21
2. Insulating layer, 13, 13A, 13B, 213, 41
3 ... Gate electrode, 413A ... Strip material layer, 1
4.14A, 14B, 414, 415 ... opening, 1
5, 15A, 15B, 15D ... Emission part, 16
..Through holes, 17 ... tip tubes, 18 ... release layers,
19 ... conductor layer, 111 ... dummy cathode electrode, 113 ... dummy gate electrode, 113A ... first layer, 113B ... second layer, 113C ... third layer,
114 ... opening, 115 ... dummy electron emission part,
20... Substrate, 21, 21R, 21G, 21B.
Phosphor layer, 22 ... black matrix, 23 ...
・ Anode electrode, 24 ・ ・ ・ Frame, 30 ・ ・ ・ Electron emission section drive circuit (control circuit), 31 ・ ・ ・ Gate electrode drive circuit (scan circuit), 32 ・ ・ ・ Acceleration power supply, 33 ・ ・ ・ Dummy Electron emission section drive circuit, 34 ... Dummy gate electrode drive circuit, 130A, 131A ... Data circuit, 130
B, 131B: scan circuit, 130C, 131C
... switching element, 51 ... release layer, 52 ...
-Conductive composition layer, 60 ... resistor layer, 70 ... carbon thin film selective growth area, 71 ... mask layer, 72 ...
Metal particles, 73: carbon thin film, 80, 180: sphere, 81: composition layer, 81A: dispersion medium, 81B
... cathode electrode material, 180A ... core material, 180
B: Surface treatment layer, 412: Partition wall, 416 ...
Projection, 417 ... thin film

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI theme coat ゛ (Reference) H04N 5/68 H04N 5/68 BF term (Reference) 5C031 DD17 5C032 JJ17 5C036 EE19 EF01 EF06 EF09 EG02 EG12 EH26 5C058 AA03 AB06 BA01 BA35 5C080 AA08 BB05 DD03 DD29 JJ02 JJ06

Claims (20)

[Claims] (A) a support; (B) a plurality of electron-emitting regions arranged on the support in a two-dimensional matrix; and (C) a support between the electron-emitting regions. Each of the electron emission regions includes one or a plurality of electron emission devices, and each of the electron emission devices includes an electron emission portion and electrons emitted from the electron emission portion. A gate electrode provided with an opening through which the dummy electron emission region is formed. Each dummy electron emission region is composed of one or more dummy electron emission devices. A display panel, comprising: a dummy gate electrode provided with an opening through which electrons emitted from a portion pass; at least a part of the dummy gate electrode is made of a gas trapping material. 2. The display panel according to claim 1, wherein the dummy gate electrode has a single-layer structure made of a gas trapping material. 3. The dummy gate electrode according to claim 1, wherein the dummy gate electrode has a laminated structure of at least a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. Display panel. 4. The display panel according to claim 1, wherein at least a part of the gate electrode is made of a gas trapping material. 5. The display panel according to claim 4, wherein the gate electrode has a single-layer structure made of a gas trapping material. 6. The display panel according to claim 4, wherein the gas trapping material forming the dummy gate electrode and the gas trapping material forming the gate electrode are the same gas trapping material. 7. The gate electrode and the dummy gate electrode each include at least a first layer made of a conductive material or an insulating material;
7. The display panel according to claim 6, wherein the display panel has a laminated structure with a second layer made of a gas trapping material. 8. A flat panel display device comprising a first panel and a second panel opposed to each other with a vacuum layer interposed therebetween, and having an effective area in which pixels are arranged in a two-dimensional matrix. One panel includes: (A) a support; (B) a plurality of electron emission regions that are arranged in a two-dimensional matrix on the support and constitute pixels; and (C) a region between the electron emission regions. Each electron-emitting region is composed of one or more electron-emitting devices, and each electron-emitting device emits electrons from the electron-emitting portion and the electron-emitting portion. A gate electrode provided with an opening through which the electrons are passed, each dummy electron emission region is composed of one or a plurality of dummy electron emission devices, each dummy electron emission device is a dummy electron emission portion, and Dummy electron emission section Comprising a dummy gate electrode having an opening provided for passing et emitted electrons, at least a portion of the dummy gate electrode, flat-panel display is characterized in that it consists of a gas-trapping material. 9. The flat panel display device according to claim 8, wherein the second panel comprises a substrate, a phosphor layer facing the electron emission region, and an anode electrode. . 10. The flat display device according to claim 8, wherein the dummy gate electrode has a single layer structure made of a gas trapping material. 11. The dummy gate electrode according to claim 8, wherein the dummy gate electrode has a laminated structure of at least a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. Flat display device. 12. The flat display device according to claim 8, wherein at least a part of the gate electrode is made of a gas trapping material. 13. The flat display device according to claim 12, wherein the gate electrode has a single-layer structure made of a gas trapping material. 14. The flat display device according to claim 12, wherein the gas trapping material forming the dummy gate electrode and the gas trapping material forming the gate electrode are the same gas trapping material. 15. A gate electrode and a dummy gate electrode having a laminated structure of at least a first layer made of a conductive material or an insulating material and a second layer made of a gas trapping material. 15. The flat panel display according to 14. 16. An electron emitting portion driving circuit electrically connected to the electron emitting portion, a gate electrode driving circuit electrically connected to the gate electrode, and a dummy electron emitting portion electrically connected to the dummy electron emitting portion. The flat display device according to claim 8, further comprising: a driving circuit; and a dummy gate electrode driving circuit electrically connected to the dummy gate electrode. 17. An electron emission section / dummy electron emission section drive circuit electrically connected to an electron emission section and a dummy electron emission section, a gate electrode drive circuit electrically connected to a gate electrode,
The flat display device according to claim 8, further comprising a dummy gate electrode driving circuit electrically connected to the dummy gate electrode. 18. An electron emitting portion driving circuit electrically connected to an electron emitting portion, a dummy electron emitting portion driving circuit electrically connected to a dummy electron emitting portion, and an electric connection to a gate electrode and a dummy gate electrode. 9. The flat display device according to claim 8, further comprising a gate electrode / dummy gate electrode drive circuit connected to the gate electrode. 19. A flat-panel display device comprising a first panel and a second panel opposed to each other with a vacuum layer interposed therebetween, and having an effective area in which pixels are arranged in a two-dimensional matrix. One panel includes: (A) a support; (B) a plurality of electron emission regions that are arranged in a two-dimensional matrix on the support and constitute pixels; and (C) a region between the electron emission regions. Each electron-emitting region is composed of one or more electron-emitting devices, and each electron-emitting device emits electrons from the electron-emitting portion and the electron-emitting portion. A gate electrode provided with an opening through which the electrons are passed, each dummy electron emission region is composed of one or a plurality of dummy electron emission devices, each dummy electron emission device is a dummy electron emission portion, and Dummy electron emission A dummy gate electrode provided with an opening through which electrons emitted from the electron emission region pass. A flat panel display driving method for sequentially operating in a direction, wherein when activating at least one electron emission region in one row of electron emission regions, all dummy electron emission regions are operated. Display device driving method. 20. A method of driving a flat panel display according to claim 19, wherein the electron emission regions arranged in the row direction are sequentially operated in the column direction. A flat display device driving method, characterized in that when operating at least one electron emission region in a region, a part or all of a dummy electron emission region near the electron emission region in one row is operated.