JP2002343254A - Conditioning method of cold-cathode filed electron emission display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a conditioning method of a cold-cathode field electron emission display device. SOLUTION: In this conditioning method of the cold-cathode field electron emission display device, consisting of a cathode panel 10 having a cathode field electron emission element provided with a cathode electrode 12 and a gate electrode 14, and anode panel 20 having an anode electrode 24, current- detecting breaking means 40, 41, R connected to the cathode electrode 12, and a conditioning means consisting of a high-voltage circuit 42 are used, the cathode electrode 12 and the gate electrode 14 are kept in a short-circuit state, the voltage applied from the high-voltage circuit 42 to the anode electrode 24 is increased gradually, and the electrical connection of the high-voltage circuit 42 and the anode electrode 24 is broken during a predetermined time by the action of the current detecting braking means in a case, when the discharge current flowing in the current detecting breaking means caused by the generation of the discharge between the anode electrode 24 and the gate electrode 14 exceeds a prescribed value.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for conditioning a cold cathode field emission display.

[0002]

2. Description of the Related Art Various types of flat-panel (flat-panel) display devices have been studied as image display devices to replace the current mainstream cathode ray tube (CRT). Examples of such a flat display device include a liquid crystal display device (LCD), an electroluminescence display device (ELD), and a plasma display device (PDP). In addition, a cold cathode field emission display device capable of emitting electrons from a solid into a vacuum without using thermal excitation, a so-called field emission display (FED), has been proposed. Attention is drawn from the viewpoint of low power consumption.

FIG. 12 shows a typical configuration example of a cold cathode field emission display (hereinafter, may be abbreviated as a display).
FIG. 13 is a schematic exploded perspective view of a part of the cathode panel 10 and the anode panel 20. In this display device, the cathode panel 10 and the anode panel 20 are arranged opposite to each other, and the cathode panel 10 and the anode panel 20 are bonded to each other via a frame 25 at each peripheral edge. The enclosed space between them is a vacuum space. The cathode panel 10 includes a plurality of cold cathode field emission devices (hereinafter sometimes abbreviated as field emission devices) as electron emitters.
FIG. 12 shows a so-called Spindt-type field emission device having an electron emission portion 16 composed of a conical electron emission electrode 16A as an example of the field emission device. The Spindt-type field emission device includes a stripe-shaped cathode electrode 12 formed on a support 11 and an insulating layer 13.
And a striped gate electrode 14 formed on the insulating layer 13, and a conical electron emitting electrode 16 </ b> A formed in the opening 15 provided in the gate electrode 14 and the insulating layer 13.
It is composed of Usually, a plurality of electron emitting electrodes 16
A is associated with one of the phosphor layers 22 described later. The electron emission electrode 16A has a cathode electrode control circuit 3
From 0, a relatively negative voltage (scanning signal) is applied through the cathode electrode 12, and a relatively positive voltage (video signal) is applied to the gate electrode 14 from the gate electrode control circuit 31. Electrons are emitted from the tip of the electron emission electrode 16A based on the quantum tunnel effect according to the electric field generated by the application of these voltages. The field emission device is not limited to the Spindt-type field emission device described above, and other types of field emission devices such as a so-called edge type and a planar type may be used.

On the other hand, the anode panel 20 is composed of a plurality of phosphor layers 22 (phosphor layers 22R and 22R) formed in a matrix or stripes on a substrate 21 made of glass or the like.
2G, 22B), a black matrix 23 filling the space between the phosphor layers 22, and an anode electrode 24 formed on the entire surface of the phosphor layer 22 and the black matrix 23. The anode electrode 24 has a gate electrode 14
Are applied from the anode electrode control circuit 32. The anode electrode 24 plays a role of guiding electrons emitted from the electron emission electrode 16A into the vacuum space toward the phosphor layer 22. In addition, the anode electrode 24 protects the phosphor particles constituting the phosphor layer 22 from sputtering by particles such as ions, reflects light emitted from the phosphor layer 22 generated by electronic excitation toward the substrate side, It also has a function of improving the brightness of the display screen viewed from the outside. The anode electrode 24 is made of, for example, an aluminum thin film.

Generally, the cathode electrode 12 and the gate electrode 1
Reference numeral 4 denotes that the projected images of the two electrodes 12 and 14 are formed in stripes in directions orthogonal to each other, and that the projected images of the two electrodes 12 and 14 overlap each other. Usually, a plurality of field emission devices are provided in a pixel area or an area corresponding to one of three sub-pixels constituting one pixel of the color display device). Further, such overlapping areas are arranged in a two-dimensional matrix in an effective area (area functioning as an actual display screen) of the cathode panel 10. One pixel is a cathode electrode 1 on the cathode panel side.
A plurality of field emission devices provided in a region where the gate electrode 2 and the gate electrode 14 overlap, and a phosphor layer 22 on the anode panel side facing the group of these field emission devices. In the effective area, such pixels are arranged, for example, in the order of several hundred thousand to several million.

[0006]

The gap between the cathode panel 10 and the anode panel 20 is 0.1 mm to 1 mm.
mm. A high voltage (for example, 6 kV) is applied to the anode electrode 24. In such a display device, the gate electrode 14 provided on the cathode panel 10 is provided.
In some cases, discharge may occur between the anode and the anode electrode 24 provided on the anode panel 20, and the quality of image display may be significantly impaired. Also, as a result of the occurrence of discharge,
There is also a problem that gas is emitted from the components of the display device and the life of the display device is shortened. In the discharge generation mechanism in the vacuum space, first, the emission of electrons and ions from the electron emission electrode 16A under a strong electric field triggers the discharge, and energy is supplied from the anode electrode control circuit 32 to the anode electrode 24, and Electrode 2
4, the occluded gas inside the anode electrode 24 is released, or the material constituting the anode electrode 24 evaporates, so that a small-scale discharge becomes a large-scale discharge (for example, arc discharge). It is thought to grow to.

[0007] Since the discharge phenomenon in the display device occurs in a vacuum, it transits beyond the glow discharge to the arc discharge at once. Because arc discharge shows negative voltage-current characteristics,
Even if a protection resistor is provided, the effect is hardly obtained, and it is difficult to control and suppress discharge by the protection resistor. Further, even if the discharge is stopped, if a high voltage is applied again to the anode electrode while the gas generated by the discharge remains, the discharge occurs again at or near the same location, and apparently the discharge is It will occur continuously.

[0008] Such a discharge during operation of the display device is generated from a projection existing in a component of the display device, or
It is mainly generated from foreign substances attached to components of the display device. Therefore, for example, in the manufacturing process of the display device, it is necessary to remove these protrusions and foreign matter.

For this purpose, so-called conditioning is performed. Specifically, for example, a voltage is applied to the anode electrode 24 while evacuating the space between the cathode panel 10 and the anode panel 20, and the voltage is gradually increased. Thereby, the gate electrode 14 and the anode electrode 2
A discharge is generated between the semiconductor device and the semiconductor device 4, and as a result, the protrusions and foreign matter are removed. In conventional conditioning methods,
A voltage is applied to the anode electrode 24 stepwise and continuously.

However, in such a conventional conditioning method, if a large-scale discharge occurs, or if the discharge continues for a long time at the same location regardless of the magnitude of the discharge, the field emission element is damaged. In some cases, the quality of image display is significantly impaired.

Therefore, an object of the present invention is to provide a method of conditioning a cold cathode field emission display device which can reliably avoid the problem that the cold cathode field emission device is damaged and the quality of image display is significantly impaired. Is to provide.

[0012]

To achieve the above object, a method of conditioning a cold cathode field emission display according to a first aspect of the present invention (hereinafter, a conditioning method according to a first aspect of the present invention) May be called)
A cathode panel provided with a plurality of cold cathode field emission devices including a cathode electrode, a gate electrode, and an electron emission portion, and an anode panel provided with a phosphor layer and an anode electrode are joined at their peripheral portions. This is a method for conditioning a cold cathode field emission display device.
Incidentally, the cold cathode field emission display having such a configuration is
For convenience, it is referred to as a cold cathode field emission display according to the first configuration.

[0013] The conditioning method according to the first aspect of the present invention comprises: (A) a current detection cut-off means connected to a cathode electrode; and (B) an electrical connection to an anode electrode. Using a conditioning means consisting of a high voltage circuit whose connection state is controlled by the current detection cutoff means, the cathode electrode and the gate electrode are short-circuited, and (a) the high voltage circuit is electrically connected to the anode electrode. And gradually increasing the high-voltage circuit supply voltage applied from the high-voltage circuit to the anode electrode to a predetermined value. (B) While increasing the high-voltage circuit supply voltage to the predetermined value, the anode electrode and the gate electrode The discharge current flowing through the current detection and interruption means due to the occurrence of discharge during the period is detected. During the predetermined time, characterized by interrupting the electrical connection between the high-voltage circuit and the anode electrode.

The second object of the present invention to achieve the above object.
The conditioning method of the cold cathode field emission display according to the aspect (hereinafter, sometimes referred to as the conditioning method according to the second aspect of the present invention) is the cold cathode field emission display according to the first configuration described above. This is a method for conditioning the device. The difference between the conditioning method according to the second aspect of the present invention and the conditioning method according to the first aspect of the present invention is that the conditioning method according to the first aspect of the present invention uses The conditioning method according to the second aspect of the present invention is that the conditioning is performed while emitting electrons from the electron-emitting portion, whereas the conditioning is performed without emitting the electrons.

That is, in the conditioning method according to the second aspect of the present invention, there are provided (A) a current detection interrupting means connected to the cathode electrode, and (B) an electrical connection to the anode electrode. A high-voltage circuit whose connection state is controlled by the current detection / interruption means, (C) a gate voltage supply circuit electrically connected to the gate electrode, and (D) a circuit disposed between the cathode electrode and the gate electrode. Capacitors,
In the state where a voltage is applied to the gate electrode from the gate voltage supply circuit,
(A) electrically connecting the high voltage circuit and the anode electrode,
The high-voltage circuit supply voltage applied from the high-voltage circuit to the anode electrode is gradually increased to a predetermined value. Detecting the discharge current flowing to the current detection and interruption means via the capacitor due to the occurrence of the discharge of
When the discharge current exceeds a specified value, the electric connection between the high voltage circuit and the anode electrode is cut off for a predetermined time by operating the current detection cutoff means.

The third object of the present invention to achieve the above object.
The conditioning method for a cold cathode field emission display according to the aspect (hereinafter, may be referred to as the conditioning method according to the third aspect of the present invention) comprises a cold cathode electric field comprising a cathode electrode, a gate electrode, and an electron emission portion. A cathode panel provided with a plurality of electron-emitting devices and an anode panel provided with a phosphor layer and an anode electrode are joined at their peripheral edges, and a focusing electrode is arranged between the gate electrode and the anode electrode. This is a conditioning method for the cold cathode field emission display device provided. The cold cathode field emission display having such a configuration is referred to as a cold cathode field emission display according to the second configuration for convenience.

The conditioning method according to the third aspect of the present invention is characterized in that (A) a current detection interrupting means connected to a cathode electrode, and (B) an electrical connection to an anode electrode. Using a conditioning means comprising a high voltage circuit whose connection state is controlled by the current detection and interruption means, the cathode electrode, the gate electrode and the focusing electrode are short-circuited, and (a) the high voltage circuit and the anode electrode are electrically connected. And (b) gradually increasing the high-voltage circuit supply voltage applied from the high-voltage circuit to the anode electrode to a predetermined value, and (b) increasing the high-voltage circuit supply voltage to the predetermined value. Detecting a discharge current flowing through the current detection and interruption means due to occurrence of discharge between the focusing electrode and the operation of the current detection and interruption means when the discharge current exceeds a specified value. Therefore, for a predetermined time, characterized by interrupting the electrical connection between the high-voltage circuit and the anode electrode.

The fourth object of the present invention to achieve the above object.
The conditioning method of the cold cathode field emission display device according to the aspect (hereinafter, may be referred to as the conditioning method according to the fourth aspect of the present invention) is the method of the cold cathode field emission display device according to the second configuration. This is a conditioning method. The difference between the conditioning method according to the fourth aspect of the present invention and the conditioning method according to the third aspect of the present invention is that the conditioning method according to the third aspect of the present invention emits electrons from the electron-emitting portion. While the conditioning is performed without performing the conditioning, the conditioning method according to the fourth aspect of the present invention lies in that the conditioning is performed while emitting electrons from the electron emission unit.

That is, a conditioning method according to a fourth aspect of the present invention is the conditioning method according to the third aspect of the present invention, wherein the conditioning means comprises:
Furthermore, a gate voltage supply circuit electrically connected to the gate electrode is provided. The step (a) and the step (b) are performed in a state where a voltage is applied to the gate electrode from the gate voltage supply circuit.

After executing the conditioning method according to the first aspect of the present invention, the conditioning method according to the second aspect of the present invention may be executed, or the conditioning according to the third aspect of the present invention may be executed. After performing the method, the conditioning method according to the fourth aspect of the present invention may be performed.

In the conditioning method according to the first to fourth aspects of the present invention, the steps (a) and (b) are performed while exhausting a space between the cathode panel and the anode panel. ) Is desirable.
Furthermore, after that, the space between the cathode panel and the anode panel may be sealed, and then the steps (a) and (b) may be performed. First aspect and second aspect of the present invention
Table 1 below shows combinations of the conditioning methods according to the aspects of the present invention, and Table 1 shows the combinations of the conditioning methods according to the third and fourth aspects of the present invention.
What is necessary is just to read "1st aspect" and "2nd aspect" in this as "3rd aspect" and "4th aspect". The numbers “1”, “2”, “3”, and “4” in Table 1 indicate the order of execution.

[Table 1]

In the conditioning method according to the first to fourth aspects of the present invention, when the conditioning is performed during the exhaust, conditioning means is provided separately from the cold cathode field emission display, and the conditioning method is performed. Can be implemented. Also, in the case where conditioning is performed after sealing and before completing the cold cathode field emission display device as a final product, a conditioning means is provided separately from the cold cathode field emission display device, and the conditioning is performed. The method can be performed. However, the following configuration may be adopted.

After the cold cathode field emission display device is completed as a final product, conditioning can be performed. However, in this case, in the conditioning method according to the first aspect of the present invention, it is necessary to make the cathode electrode and the gate electrode short-circuited. It is necessary to have a circuit configuration that can be in a short-circuit state. In the conditioning method according to the third aspect of the present invention, it is necessary to short-circuit the cathode electrode, the gate electrode, and the focusing electrode.
It is necessary to provide a circuit configuration in which all cathode electrodes, gate electrodes, and focusing electrodes can be grounded and short-circuited. Furthermore, in the conditioning method according to the fourth aspect of the present invention, it is necessary to make the cathode electrode and the focusing electrode short-circuited. It is necessary to have a circuit configuration that allows the following. In the conditioning method according to the second aspect of the present invention, it is necessary to incorporate a capacitor into the cold cathode field emission display. In the conditioning method according to the fourth aspect, it is preferable to dispose a bypass capacitor between the focusing electrode and the gate electrode. Then, in the conditioning methods according to the first to fourth aspects of the present invention, it is necessary to incorporate the current detection cutoff means into the cold cathode field emission display. As the high-voltage circuit, an anode electrode control circuit may be used, but it is necessary that the output voltage of the anode electrode control circuit be variable. In the conditioning methods according to the second and fourth aspects of the present invention, a gate electrode control circuit incorporated in a cold cathode field emission display may be used as the gate voltage supply circuit.

In the conditioning method according to the first to fourth aspects of the present invention, the electric current between the high-voltage circuit and the anode electrode is maintained for a predetermined time by the operation of the current detection cutoff means. After disconnecting the connection, the conditioning means electrically connects the high-voltage circuit to the anode electrode and applies a high-voltage circuit supply voltage from the high-voltage circuit to the anode electrode. It is preferable to provide a means for controlling the disconnection time of the electrical connection, and such a means includes, for example, a timer circuit.

According to the fifth aspect of the present invention, there is provided the above-mentioned object.
The conditioning method of the cold cathode field emission display according to the aspect (hereinafter, may be referred to as the conditioning method according to the fifth aspect of the present invention) comprises a cold cathode electric field comprising a cathode electrode, a gate electrode, and an electron emission portion. In a cold cathode field emission display device in which a cathode panel provided with a plurality of electron-emitting devices and an anode panel provided with a phosphor layer and an anode electrode are joined at their peripheral portions, A method for conditioning a cold cathode field emission display device in which a high-voltage circuit supply voltage applied to is stepwise raised to a predetermined value to cause a discharge between an anode electrode and a cold cathode field emission device, PW ₁ the pulse width of the pulsed high voltage circuit supply voltage, when the pulse period PW _0, a pulse voltage value and a PV, (a) Pas The scan voltage PV and the pulse period PW ₀ is constant, while successively to extend the pulse width PW _1, a pulsed high voltage circuit supply voltage of the pulse voltage PV is applied to the anode electrode, (b) a pulse width PW _1> Pulse period PW ₀
Then, the pulse voltage value PV is increased, and the steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value.

In this case, a discharge is generated between the anode electrode and the cold cathode field emission device. Specifically, the discharge mainly occurs between the anode electrode and the gate electrode.

Further, a configuration in which a focusing electrode is provided between the gate electrode and the anode electrode may be adopted. Also in this case, a discharge is generated between the anode electrode and the cold cathode field emission device, and this discharge is, specifically,
It mainly occurs between the anode electrode and the focusing electrode.

Here, it is desirable that the pulse width PW ₁ of the pulsed high-voltage circuit supply voltage is 0.1 ms to 1 second, preferably 1 ms to 100 ms, and the pulse period PW ₀ is 1 mm. It is desirable to set the change amount ΔPV of the step-like pulse voltage value to 1 to 0.1 kV, preferably 10 to 0.1 kV, and more preferably 10 to 0.1 kV. Desirably, kilovolts. Note that extra time? Pw ₁ to 0.1 msec to 100 msec pulse width PW _1, preferably it is desirable that the 1 millisecond to 10 milliseconds. After one supply of the pulsed high voltage circuit supply voltage, the pulse width PW
It may be carried out _first extension, after the supply of the plurality of pulsed high voltage circuit supply voltage, may be performed to extend the pulse width PW _1. The number of supply times of the pulse-like high-voltage circuit supply voltage at the step-like pulse voltage value is from 6 × 10 to 6 × 10
^{The number of} times is preferably ⁵ times, preferably 6 × 10 ² times to 6 × 10 ⁴ times.

In a conditioning method according to a fifth aspect of the present invention including a configuration in which a focusing electrode is provided,
Steps (a) and (b) may be repeated until the pulse voltage value PV reaches the predetermined value while evacuating the space between the cathode panel and the anode panel.

Alternatively, in the conditioning method according to the fifth aspect of the present invention including the configuration in which the focusing electrode is provided, after the space between the cathode panel and the anode panel is sealed, the pulse voltage value PV Step (a) and Step (b) may be repeated until the value reaches the predetermined value.

Alternatively, in the conditioning method according to the fifth aspect of the present invention including the configuration in which the focusing electrode is provided, the pulse voltage value PV is increased while the space between the cathode panel and the anode panel is evacuated. The steps (a) and (b) are repeated until the predetermined value is reached, and then, after sealing the space between the cathode panel and the anode panel, the pulse voltage value PV reaches the predetermined value. Until the step (a) and the step (b) are repeated.

Alternatively, in the conditioning method according to the fifth aspect of the present invention including the configuration in which the focusing electrode is provided, the gate electrode is electrically connected to the gate voltage supply circuit, and After the steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value in a state where no voltage is applied to the gate electrode, a voltage is applied to the gate electrode from the gate voltage supply circuit. In this state, the step (a) and the step (b) may be repeated again until the pulse voltage value PV reaches the predetermined value.

In this case, while the space between the cathode panel and the anode panel is evacuated, while the voltage is not applied to the gate electrode from the gate voltage supply circuit, until the pulse voltage value PV reaches the predetermined value. After the steps (a) and (b) are repeated, the step (a) is performed while the voltage is applied to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value.
And step (b) may be repeated again.

Alternatively, in this case, after sealing the space between the cathode panel and the anode panel, the pulse voltage value PV is set to the predetermined value in a state where no voltage is applied to the gate electrode from the gate voltage supply circuit. After the steps (a) and (b) are repeated until the pulse voltage value reaches the predetermined value, the voltage is applied to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value. )
And step (b) may be repeated again.

Alternatively, in this case, while evacuating the space between the cathode panel and the anode panel, while applying no voltage to the gate electrode from the gate voltage supply circuit,
After the steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value, the pulse voltage value becomes the predetermined value while the voltage is applied to the gate electrode from the gate voltage supply circuit. And the above steps (a) and (b) are repeated again until the space between the cathode panel and the anode panel is sealed.
The steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value in a state where no voltage is applied to the gate electrode from the gate voltage supply circuit. And step (b) may be repeated until the pulse voltage value PV reaches the predetermined value.

In a conditioning method according to a fifth aspect of the present invention including a configuration in which a focusing electrode is provided,
Wherein in step (a), the depending on the discharge frequency and / or the discharge current between the anode electrode and the cold cathode field emission device, the pulse width PW _1, once can be in the form of shortening. Further, in the step (a), the pulse voltage value PV is temporarily set according to the discharge frequency and / or discharge current between the anode electrode and the cold cathode field emission device.
It can be in the form of lowering. Alternatively, in the step (a), it is possible in accordance with the discharge frequency and / or the discharge current between the anode electrode and the cold cathode field emission device, and interrupting the form to extend the pulse width PW ₁ . In addition, you may combine these each form. Furthermore, these forms can be combined with the various forms described above.

The conditioning method according to the fifth aspect of the present invention may be carried out during exhaustion, or after sealing and before completing the cold cathode field emission display as a final product. You may. Further, in some cases,
This may be performed after the cold cathode field emission display device is completed as a final product.

It is to be noted that the conditioning method according to the first to fourth aspects of the present invention may be combined with the conditioning method according to the fifth aspect of the present invention including various modes. That is, the conditioning method according to the first and fifth aspects of the present invention may be combined, or the conditioning method according to the second and fifth aspects of the present invention may be combined, First of the present invention
The conditioning method according to the second, fifth, and fifth aspects may be combined, the conditioning method according to the third and fifth aspects of the present invention may be combined, and the present invention may be combined. May be combined with the conditioning method according to the fifth and fifth aspects, or may be combined with the conditioning method according to the third, fourth, and fifth aspects of the present invention.

The cold cathode field emission device in the cold cathode field emission display according to the first or second configuration of the present invention is provided on (a) a support and (b) a support. A cathode electrode, (c) an insulating layer formed on the support and the cathode electrode, (d) a gate electrode provided on the insulating layer, (e) an opening penetrating the gate electrode and the insulating layer, (F) An electron emission electrode provided on a portion of the cathode electrode located at the bottom of the opening, and the electron emission electrode exposed at the bottom of the opening can have a structure corresponding to the electron emission portion. .

Incidentally, such a structure is referred to as a cold cathode field emission device having the first structure for convenience. As a type of such a cold cathode field emission device, a Spindt type (a cold cathode field emission device in which a conical electron emission electrode is provided on a portion of the cathode electrode located at the bottom of the opening),
Crown type (cold cathode field emission device in which a crown-shaped electron emission electrode is provided on a portion of a cathode electrode located at the bottom of an opening), flat type (a substantially flat electron emission electrode is
(A cold cathode field emission device provided on the portion of the cathode electrode located at the bottom of the opening).

Alternatively, the cold cathode field emission device in the cold cathode field emission display according to the first or second configuration of the present invention comprises: (a) a support; A cathode electrode provided, (c) an insulating layer formed on the support and the cathode electrode, (d) a gate electrode provided on the insulating layer, and (e) a gate electrode and the insulating layer, An opening in which the cathode electrode is exposed at the bottom portion may be provided, and the portion of the cathode electrode exposed at the bottom portion of the opening portion may have a structure corresponding to the electron emission portion.

Incidentally, such a structure is referred to as a cold cathode field emission device having the second structure for convenience. As a type of such a cold cathode field emission device, a flat type cold cathode field emission device which emits electrons from a flat cathode electrode surface, and a crater type which emits electrons from a projection on the surface of the cathode electrode having irregularities are formed. A cold cathode field emission device can be mentioned.

Further, the cold cathode field emission device in the cold cathode field emission display according to the first or second configuration of the present invention comprises: (a) a support;
(B) a cathode electrode provided above the support and having an edge portion; (c) an insulating layer formed on at least the cathode electrode; (d) a gate electrode provided on the insulating layer; A) an opening that penetrates at least the gate electrode and the insulating layer, and the edge of the cathode electrode exposed at the bottom or the side wall of the opening may correspond to the electron emission portion.

For convenience, such a structure is referred to as a cold cathode field emission device having the third structure or an edge type cold cathode field emission device.

Further, the first configuration or the second configuration of the present invention
The cold cathode field emission device in the cold cathode field emission display device according to the above configuration, (a) disposed on a support,
A strip spacer made of an insulating material, (b) a gate electrode made of a strip material layer having a plurality of openings formed therein, and
(C) An electron emission portion, and a structure in which a band-shaped material layer is stretched so as to be in contact with the top surface of the spacer and to have an opening above the electron emission portion.

Incidentally, such a structure is referred to as a cold cathode field emission device having the fourth structure for convenience. As the electron emitting portion in the cold cathode field emission device having the fourth structure, various electron emission electrodes and electron emission portions in the cold cathode field emission devices having the first to third structures can be applied. .

Tungsten (W), as a material forming a gate electrode in a cold cathode field emission device having the first structure, the second structure or the third structure, or as a material forming a focusing electrode, Niobium (Nb),
Tantalum (Ta), titanium (Ti), molybdenum (M
o), chromium (Cr), aluminum (Al), copper (C
u), gold (Au), silver (Ag), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe),
At least one metal selected from the group consisting of platinum (Pt) and zinc (Zn); alloys or compounds containing these metal elements (eg, nitrides such as TiN, WSi
₂ , a silicide such as MoSi ₂ , TiSi ₂ , TaSi ₂ ); or a semiconductor such as silicon (Si); ITO
(Indium tin oxide), conductive metal oxides such as indium oxide and zinc oxide. To form a gate electrode, a known thin film forming technique such as a CVD method, a sputtering method, an evaporation method, an ion plating method, an electrolytic plating method, an electroless plating method, a screen printing method, a laser ablation method, and a sol-gel method. As a result, a thin film made of the above constituent material is formed on the insulating layer. When a thin film is formed on the entire surface of the insulating layer, the thin film is patterned using a known patterning technique to form a gate electrode in a stripe shape. After the formation of the stripe-shaped gate electrode, an opening may be formed in the gate electrode, or an opening may be formed in the gate electrode at the same time as the formation of the stripe-shaped gate electrode. If a resist pattern is formed in advance on the insulating layer before the formation of the gate electrode conductive material layer, the gate electrode can be formed by a lift-off method. Furthermore, if vapor deposition is performed using a mask having an opening corresponding to the shape of the gate electrode or screen printing is performed using a screen having such an opening, patterning after film formation becomes unnecessary. Alternatively, a gate electrode can be provided by preparing a strip-shaped material layer having an opening in advance and fixing the strip-shaped material layer on a spacer, whereby a cold cathode field emission device having a fourth structure can be provided. An element can be obtained.

In the cold cathode field emission device having the first structure including the Spindt-type cold cathode field emission device, as a material constituting the electron emission electrode, tungsten, a tungsten alloy, molybdenum, a molybdenum alloy,
Titanium, titanium alloy, niobium, niobium alloy, tantalum,
At least one material selected from the group consisting of a tantalum alloy, chromium and a chromium alloy, and silicon containing impurities (polysilicon or amorphous silicon) can be given.

In the cold cathode field emission device having the first structure including the crown type cold cathode field emission device, conductive particles,
Alternatively, a combination of conductive particles and a binder can be used. As the conductive particles, carbon-based materials such as graphite; refractory metals such as tungsten (W), niobium (Nb), tantalum (Ta), titanium (Ti), molybdenum (Mo), and chromium (Cr); or ITO ( And a transparent conductive material such as indium tin oxide.
As the binder, for example, glass such as water glass or a general-purpose resin can be used. General-purpose resins include thermoplastic resins such as vinyl chloride resin, polyolefin resin, polyamide resin, cellulose ester resin, and fluorine resin, and thermosetting resins such as epoxy resin, acrylic resin, and polyester resin. Can be exemplified. In order to improve the electron emission efficiency, it is preferable that the particle size of the conductive particles is sufficiently smaller than the size of the electron emission electrode. The shape of the conductive particles is not particularly limited, such as a sphere, a polyhedron, a plate, a needle, a column, and an irregular shape. However, it is preferable that the shape is such that the exposed portions of the conductive particles can be sharp projections. Conductive particles having different dimensions and shapes may be mixed and used.

In a cold cathode field emission device having a first structure comprising a flat type cold cathode field emission device,
As a material forming the electron emission electrode, it is preferable to configure a material having a work function Φ smaller than that of the material forming the cathode electrode.What kind of material is selected is a work function of the material forming the cathode electrode, What is necessary is just to determine based on the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of required emission electron current density, etc. As representative materials constituting the cathode electrode in the cold cathode field emission device, tungsten (Φ = 4.55 eV), niobium (Φ = 4.02 to 4.87 eV), molybdenum (Φ =
4.53-4.95 eV), aluminum (Φ = 4.2)
8 eV), copper (Φ = 4.6 eV), tantalum (Φ = 4.
3 eV), chromium (Φ = 4.5 eV), silicon (Φ =
4.9 eV). The electron emission electrode preferably has a work function Φ smaller than these materials, and its value is preferably about 3 eV or less. Such materials include carbon (Φ <1 eV), cesium (Φ = 2.14 eV), LaB ₆ (Φ = 2.66).
２2.76 eV), BaO (Φ = 1.6 to 2.7 e)
V), SrO (Φ = 1.25-1.6 eV), Y ₂ O
₃ (Φ = 2.0 eV), CaO (Φ = 1.6-1.86)
eV), BaS (Φ = 2.05 eV), TiN (Φ =
2.92 eV) and ZrN (Φ = 2.92 eV). More preferably, the electron emission electrode is made of a material having a work function Φ of 2 eV or less. still,
The material constituting the electron emission electrode does not necessarily need to have conductivity.

Particularly preferred materials for the electron-emitting electrode include carbon, more specifically diamond, and among others, amorphous diamond. 5 × when the electron emission electrode is composed of amorphous diamond
At an electric field strength of 10 ⁷ V / m or less, an emission electron current density required for a cold cathode field emission display can be obtained. In addition, since amorphous diamond is an electric resistor, the emission electron current obtained from each electron emission electrode can be made uniform, and therefore, it is possible to suppress the luminance variation of the cold cathode field emission display. Further, since amorphous diamond has extremely high resistance to the sputtering action of the residual gas ions in the cold cathode field emission display, the life of the cold cathode field emission device can be extended.

Alternatively, in a cold cathode field emission device having a first structure comprising a flat type cold cathode field emission device, a secondary electron gain δ of such a material is used as a material constituting the electron emission electrode. May be appropriately selected from materials that are larger than the secondary electron gain δ of the conductive material forming the cathode electrode. That is, silver (Ag), aluminum (Al), gold (Au), cobalt (Co), copper (C
u), molybdenum (Mo), niobium (Nb), nickel (Ni), platinum (Pt), tantalum (Ta), tungsten (W), zirconium (Zr) and other metals; silicon (Si), germanium (Ge) Such as semiconductors; inorganic simple substances such as carbon and diamond; and aluminum oxide (Al
₂ O ₃ ), barium oxide (BaO), beryllium oxide (B
eO), calcium oxide (CaO), magnesium oxide (MgO), tin oxide (SnO ₂ ), barium fluoride (B
aF ₂ ) and calcium fluoride (CaF ₂ ). The material constituting the electron emission electrode does not necessarily need to have conductivity.

A cold cathode field emission device having the second structure (a flat cold cathode field emission device or a crater type cold cathode field emission device) or a cold cathode field emission device having the third structure (edge In the case of a cold cathode field emission device, a material constituting a cathode electrode corresponding to an electron emission portion is tungsten (W), tantalum (Ta), niobium (Nb), titanium (Ti), molybdenum (Mo). ), Chrome (Cr), aluminum (A
l), metals such as copper (Cu), gold (Au), silver (Ag),
Alternatively, examples thereof include alloys and compounds thereof (for example, nitrides such as TiN, silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , and TaSi ₂ ), semiconductors such as diamond, and carbon thin films. The thickness of such a cathode electrode is approximately 0.05 to 0.5 μm, preferably 0.1 to 0.5 μm.
It is desirable that the thickness be in the range of 1 to 0.3 μm, but it is not limited to such a range. Examples of the method for forming the cathode electrode include a vapor deposition method such as an electron beam vapor deposition method and a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, and a plating method. . According to the screen printing method or the plating method, it is possible to directly form a striped cathode electrode.

Alternatively, a second structure (a flat cold cathode field emission device or a crater type cold cathode field emission device), and a cold cathode field emission device having a third structure (an edge type cold cathode field emission device). Element) or a cold cathode field emission device having a first structure comprising a flat cold cathode field emission device, wherein the cathode electrode and the electron emission electrode are formed of a conductive paste in which conductive fine particles are dispersed. Can also be used. Examples of conductive fine particles include graphite powder; graphite powder obtained by mixing at least one of barium oxide powder, strontium oxide powder, and metal powder; diamond particles or diamond-like carbon powder containing impurities such as nitrogen, phosphorus, boron, and triazole;・ Nano tube powder;
(Sr, Ba, Ca) CO ₃ powder; silicon carbide powder can be exemplified. In particular, it is preferable to select graphite powder as the conductive fine particles from the viewpoint of reduction of the threshold electric field and durability of the electron emitting portion. The shape of the conductive fine particles can be any of a regular shape and an irregular shape in addition to the spherical shape and the scale shape. The particle size of the conductive fine particles may be equal to or less than the thickness or pattern width of the cathode electrode or the electron emission electrode. The smaller the particle size, the more the number of emitted electrons per unit area can be increased. However, if the particle size is too small, the conductivity of the cathode electrode and the electron emission electrode may be deteriorated. Therefore, a preferable range of the particle size is approximately 0.01 to 4.0 μm. Such conductive fine particles are mixed with a glass component or other suitable binder to prepare a conductive paste, a desired pattern is formed by a screen printing method using the conductive paste, and then the pattern is fired to emit electrons. A cathode electrode or an electron emission electrode functioning as a part can be formed. Alternatively, a cathode electrode or an electron emission electrode functioning as an electron emission portion can be formed by a combination of a spin coating method and an etching technique or a lift-off method.

In the cold cathode field emission device having the first structure including the Spindt-type cold cathode field emission device and the crown type cold cathode field emission device, tungsten is used as a material for forming the cathode electrode. (W), niobium (Nb), tantalum (Ta), molybdenum (M
o), chromium (Cr), aluminum (Al), copper (C
u) and the like; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ , MoS
i _2, TiSi _2, TaSi silicide such as _2); a semiconductor such as silicon (Si); or ITO (indium tin oxide) can be exemplified. Examples of the method for forming the cathode electrode include a vapor deposition method such as an electron beam vapor deposition method and a hot filament vapor deposition method, a sputtering method, a combination of a CVD method, an ion plating method and an etching method, a screen printing method, a plating method, and a lift-off method. be able to. According to the screen printing method or the plating method, it is possible to directly form a striped cathode electrode.

The cold cathode field emission display according to the first and second configurations, or the cold cathode field emission display including the cold cathode field emission devices having the first to third structures. Preferably, the anode panel includes a substrate, a phosphor layer, and an anode electrode. The electron irradiation surface depends on the structure of the anode panel, and is formed of a phosphor layer, or alternatively, is formed of an anode electrode.

The constituent material of the anode electrode may be appropriately selected depending on the structure of the cold cathode field emission display. That is, when the cold cathode field emission display is a transmission type (an anode panel corresponds to a display surface) and an anode electrode and a phosphor layer are laminated on the substrate in this order, the substrate is Originally, the anode electrode itself must be transparent, and a transparent conductive material such as ITO (indium tin oxide) is used. On the other hand, when the cold cathode field emission display is of a reflection type (the cathode panel corresponds to the display surface),
And, when the phosphor layer and the anode electrode are laminated on the substrate in this order even in the transmission type, in addition to ITO,
The materials described above in relation to the cathode electrode and the gate electrode can be appropriately selected and used.

As the phosphor constituting the phosphor layer, a phosphor for high-speed electron excitation or a phosphor for low-speed electron excitation can be used. When the cold cathode field emission display is a monochromatic display, the phosphor layer may not be particularly patterned. When the cold cathode field emission display is a color display, phosphor layers corresponding to the three primary colors of red (R), green (G), and blue (B) patterned in stripes or dots are alternately arranged. It is preferable to arrange them in
The gap between the patterned phosphor layers may be filled with a black matrix for the purpose of improving the contrast of the display screen.

As an example of the configuration of the anode electrode and the phosphor layer,
(1) An anode electrode is formed on a substrate, and a phosphor layer is formed on the anode electrode. (2) A phosphor layer is formed on the substrate, and an anode electrode is formed on the phosphor layer. Configuration. In the configuration of (1), a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor layer. In the configuration of (2), a metal back film may be formed on the anode electrode.

It is preferable from the viewpoint of simplifying the structure of the cold cathode field emission display that the projected image of the striped gate electrode and the projected image of the striped cathode electrode extend in a direction orthogonal to each other. Note that an electron emission portion (one or a plurality of cold cathode electric fields) is provided in an overlapping region (corresponding to a region for one pixel or a region for one subpixel) where projected images of the stripe-shaped cathode electrode and the stripe-shaped gate electrode overlap. An electron-emitting device is provided, and such overlapping regions are usually arranged in a two-dimensional matrix in the effective region of the cathode panel.

In the cold cathode field emission device having the first to third structures, the planar shape of the opening (the shape when the opening is cut along a virtual plane parallel to the surface of the support)
Is a circle, ellipse, rectangle, polygon, rounded rectangle,
Any shape such as a rounded polygon can be used. The opening can be formed by, for example, isotropic etching, or a combination of anisotropic etching and isotropic etching. One opening is provided in the gate electrode, one opening communicating with one opening provided in the gate electrode is provided in the insulating layer, and one or a plurality of electrons are provided in the opening provided in the insulating layer. An emission electrode may be provided, a plurality of openings are provided in the gate electrode, one opening communicating with the plurality of openings provided in the gate electrode is provided in the insulating layer, and the opening is provided in the insulating layer. One or a plurality of electron-emitting electrodes may be provided in one opening.

As the constituent material of the insulating layer, SiO ₂ , Si
N, SiON, SOG (spin on glass), low melting point glass, and glass paste can be used alone or in appropriate combination. CVD is used for forming the insulating layer.
Known processes such as a method, a coating method, a sputtering method, and a screen printing method can be used.

The insulating layer may be formed in a partition shape. In this case, the partition-like insulating layer may be formed in a region between adjacent stripe-shaped cathode electrodes, or in a region between adjacent cathode electrode groups when a plurality of cathode electrodes constitute a group of cathode electrodes. Just fine. As a material for forming the partition-like insulating layer, a conventionally known insulating material can be used. For example, a material in which a metal oxide such as alumina is mixed with widely used low-melting glass can be used. As a method for forming the partition-like insulating layer, a screen printing method, a sand blast method, a dry film method, and a photosensitive method can be exemplified. With the dry film method, a photosensitive film is laminated on a support, the photosensitive film is removed from a portion where a partition-like insulating layer is to be formed by exposure and development, and an insulating layer material is applied to an opening formed by the removal. It is a method of embedding and firing. The photosensitive film is burned and removed by baking, so that the insulating layer material for forming the partition embedded in the opening remains, forming a partition-shaped insulating layer. The photosensitive method is a method in which an insulating layer material for forming a partition having photosensitivity is formed on a support, and the insulating layer material is patterned by exposure and development, followed by baking. A strip spacer made of an insulating material in the cold cathode field emission device having the fourth structure can be formed in a similar manner.

A resistor layer may be provided between the cathode electrode and the electron emission electrode. Alternatively, when the surface of the cathode electrode or its edge portion corresponds to the electron emission portion, the cathode electrode may have a three-layer structure of a conductive material layer, a resistor layer, and an electron emission layer corresponding to the electron emission portion. By providing the resistor layer, the operation of the cold cathode field emission device can be stabilized and the electron emission characteristics can be made uniform.
As a material for forming the resistor layer, a carbon-based material such as silicon carbide (SiC), a semiconductor material such as SiN or amorphous silicon, ruthenium oxide (RuO)
₂ ), high melting point metal oxides such as tantalum oxide and tantalum nitride. Examples of the method for forming the resistor layer include a sputtering method, a CVD method, and a screen printing method. The resistance value is about 1 × 10 ⁵ ~
It may be 1 × 10 ⁷ Ω, preferably several MΩ.

The support constituting the cathode panel or the substrate constituting the anode panel only needs to have at least the surface made of an insulating member. A quartz substrate having an insulating film formed on its surface and a semiconductor substrate having an insulating film formed on its surface can be given.

When the cathode panel and the anode panel are joined at the peripheral portion, the joining may be performed using an adhesive layer, or a combination of a frame made of an insulating rigid material such as glass or ceramics and an adhesive layer. You may go.
When the frame and the adhesive layer are used together, by appropriately selecting the height of the frame, the facing distance between the cathode panel and the anode panel is set longer than when using only the adhesive layer. It is possible to In addition, as a constituent material of the adhesive layer, frit glass is generally used, but a so-called low melting point metal material having a melting point of about 120 to 400 ° C. may be used. Examples of such low melting point metal materials include In (indium: melting point: 157 ° C.); indium-gold based low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point: 220 to 370 ° C.);
n ₉₅ Cu ₅ (melting point 227 to 370 ° C) such as tin (Sn)
High-temperature solder: Pb _97.5 Ag _2.5 (melting point 304 ° C),
Pb _94.5 Ag _5.5 (melting point 304-365 ° C), Pb
Lead (Pb) such as _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C)
-Based high-temperature solder; zinc (Zn) -based high-temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to
314 ° C.), Sn ₂ Pb ₉₈ (melting point 316-322 ° C.), etc .; tin-lead based solder; Au ₈₈ Ga ₁₂ (melting point 38
1 ° C) brazing filler metal (All subscripts above represent atomic%)
Can be exemplified.

When the cathode panel, the anode panel and the frame are joined together, the three may be joined simultaneously,
Alternatively, one of the cathode panel and the anode panel may be joined to the frame in the first stage, and the other of the cathode panel and the anode panel may be joined to the frame in the second stage. If the three-member simultaneous bonding and the bonding in the second stage are performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, the frame, and the adhesive layer is evacuated simultaneously with the bonding. Alternatively, after the joining of the three members, the space surrounded by the cathode panel, the anode panel, the frame, and the adhesive layer may be evacuated to a vacuum. When evacuation is performed after the bonding, the pressure of the atmosphere at the time of the bonding may be either normal pressure or reduced pressure. The gas constituting the atmosphere may be air, nitrogen gas, or group 0 of the periodic table. May be an inert gas containing a gas belonging to (for example, Ar gas).

In the case where exhaust is performed after the bonding, the exhaust can be performed through a chip tube previously connected to the cathode panel and / or the anode panel. The tip tube is typically configured using a glass tube, and has a cathode panel and / or
Alternatively, frit glass or the above-mentioned low-melting metal material is used to join the periphery of the through-hole provided in the ineffective area of the anode panel, and after the space reaches a predetermined degree of vacuum, the space is sealed off by thermal fusion. Note that if the entire cold cathode field emission display is once heated and then cooled before the sealing is performed, the residual gas can be released into the space, and the residual gas can be removed to the outside by exhaust. This is preferable because

In the conditioning method according to the first to fourth aspects of the present invention, when the discharge current exceeds a specified value, the high voltage circuit and the anode are connected for a predetermined time by the operation of the current detection cutoff means. Since the electrical connection with the electrodes is cut off, it is possible to avoid the problem that the cold cathode field emission device is damaged and the quality of image display is significantly impaired. Further, in the conditioning method according to the fifth aspect of the present invention, since the pulsed high-voltage supply voltage is applied from the high-voltage circuit to the anode electrode, the discharge does not continue beyond the pulse width, and the cold cathode electric field It is possible to avoid the problem that the emission element is damaged and the quality of image display is significantly impaired.

[0071]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings based on embodiments of the invention (hereinafter abbreviated as embodiments).

(Embodiment 1) Embodiment 1 relates to a conditioning method according to the first aspect of the present invention.
FIG. 1A is a conceptual diagram of a cold cathode field emission display (hereinafter simply referred to as a display) according to the first embodiment, and FIG. 2) and 3) are schematic partial end views of the display device when the conditioning is being performed. The schematic partial end view of the completed display device is the same as that shown in FIG. 12, and the schematic exploded perspective view of a part of the cathode panel and the anode panel is the same as that shown in FIG.

This display device is a display device according to the first configuration, and a cold cathode field emission device (hereinafter abbreviated as a field emission device) has a first structure. That is, the display device includes a cathode panel 10 provided with a plurality of field emission elements including a cathode electrode 12, a gate electrode 14, and an electron emission section 16, and an anode panel 20 provided with a phosphor layer 22 and an anode electrode 24. However, the frame 2
5 are joined. The field emission device according to the first embodiment has a so-called Spind (Spind) having an electron emission portion 16 constituted by a conical electron emission electrode 16A.
A t) type field emission device was used. More specifically, the Spindt-type field emission device includes a stripe-shaped cathode electrode 12 formed on a support 11, an insulating layer 13, and an insulating layer 13.
The gate electrode 14 has a stripe-shaped gate electrode 14 formed thereon, and a conical electron emission electrode 16 </ b> A formed in an opening 15 provided in the gate electrode 14 and the insulating layer 13. The electron emission section 16 is located in an overlapping area where the projected image of the striped gate electrode 14 and the projected image of the striped cathode electrode 12 overlap. Electron emission unit 1
6 or the structure of the Spindt-type field emission device will be described later in detail. Usually, a plurality of field emission devices are associated with one of the phosphor layers 22 described later.

On the other hand, the anode panel 20 is composed of a plurality of phosphor layers 22 (red light-emitting phosphor layers 2) formed in a matrix or stripes on a substrate 21 made of glass or the like.
2R, green light emitting phosphor layer 22G, blue light emitting phosphor layer 22
B), a black matrix 23 filling the space between the phosphor layers 22, and an anode electrode 24 formed on the entire surface of the phosphor layer 22 and the black matrix 23.

Generally, the cathode electrode 12 and the gate electrode 1
Reference numeral 4 denotes that the projected images of these two electrodes 12 and 14 are formed in stripes in directions orthogonal to each other, and that the projected images of these two electrodes 12 and 14 overlap each other. Usually, a plurality of field emission elements are arranged in a pixel area or an area corresponding to one of three sub-pixels constituting one pixel of the color display device). Further, such overlapping areas are arranged in a two-dimensional matrix in the effective area of the cathode panel 10. One pixel includes a group of a plurality of field emission elements provided in an overlapping region of the cathode electrode 12 and the gate electrode 14 on the cathode panel side, and a phosphor layer 22 on the anode panel side facing the group of these field emission elements. It is constituted by. In the effective area, such pixels are arranged, for example, in the order of several hundred thousand to several million.

When an image is displayed on the display device, a relatively negative voltage (scanning signal) is applied to the electron emission electrode 16A from the cathode electrode control circuit 30 through the cathode electrode 12, as shown in FIG. A relatively positive voltage (video signal) is applied to the gate electrode 14 from the gate electrode control circuit 31. Electrons are emitted from the tip of the electron emission electrode 16A based on the quantum tunnel effect according to the electric field generated by the application of these voltages. On the other hand, a positive voltage higher than the positive voltage applied to the gate electrode 14 is applied to the anode electrode 24 from the anode electrode control circuit 32,
The anode electrode 24 plays a role of guiding electrons emitted from the electron emission electrode 16A into the vacuum space toward the phosphor layer 22. In addition, the anode electrode 24 is
2 is protected from spattering by particles such as ions, and the light emission of the phosphor layer 22 generated by the electronic excitation is reflected toward the substrate to reduce the brightness of the display screen observed from outside the substrate 21. It also has the function of improving.
The anode electrode 24 is made of, for example, an aluminum thin film.

The conditioning means in the conditioning method according to the first embodiment includes (A) a current detection cut-off means connected to the cathode electrode 12 and (B) an electrical connection to the anode electrode 24. High-voltage circuit 4 whose state is controlled by current detection and interruption means
2.

The current detecting and interrupting means includes a current detecting and interrupting circuit 4
0, a resistance element R (resistance value: for example, 0.1Ω), and a switching circuit 41. Here, one end of the resistance element R is connected to the cathode electrode 12, and the other end is grounded. Further, the current detection cutoff circuit 40 is connected to the resistance element R.
Is connected. The switching circuit 41 is provided between one end of the high voltage circuit 42 and the anode electrode 24, and the other end of the high voltage circuit 42 is grounded. The switching circuit 41 and the high-voltage circuit 42 can be configured by known circuits.

The current detection cutoff circuit 40 includes a comparator 50,
Comparison value generating means 51, latch circuit 52, timer circuit 53, off time setting means 54, NAND circuit 55
, An isolation circuit 56, and an on / off driver 57. The voltage generated at both ends of the resistance element R is input to one input terminal of the comparator 50, and the comparison value (reference voltage) output from the comparison value (reference voltage) generating means 51 is input to the other input terminal. ), And the output of the comparator 50 is input to the latch circuit 52.
The output of the latch circuit 52 is input to the NAND circuit 55 and the timer circuit 53. The timer circuit 53 is controlled by the off-time setting means 54, and a predetermined time (t _OFF ) at which the electrical connection between the high-voltage circuit 42 and the anode electrode 24 is cut _off is determined. The output of the timer circuit 53 is input to the NAND circuit 55. NAND circuit 5
5 is input to an on / off driver 57,
The on / off driver 57 is controlled by the output from the ND circuit 55, and the on / off operation of the switching circuit 41 is controlled by the on / off driver 57.
Note that an isolation circuit 56 is provided between the NAND circuit 55 and the on / off driver 57, and various circuits (circuits to which high voltage can be applied) arranged upstream (on the resistance element R side), Various circuits (circuits to which low pressure is applied) arranged downstream are electrically separated.

In the conditioning method of the first embodiment, all cathode electrodes 12 and gate electrodes 14 are short-circuited. No intentional resistance is provided between the cathode electrode 12 and the gate electrode 14. When a resistor is provided between the cathode electrode 12 and the gate electrode 14, when a discharge occurs between the anode electrode 24 and the gate electrode 14, or between the anode electrode 24 and the electron emission electrode 16A, the gate electrode 14 This is because there is a possibility that the potential may increase between the electrode and the cathode electrode 12 and damage to the field emission device may occur. Specifically, for example, the cathode electrode 12
All of the wiring extending from the gate electrode 14 may be short-circuited by a conductive tape or the like, and all of the wiring extending from the gate electrode 14 may be short-circuited by a conductive tape or the like, and these conductive tapes and the like may be electrically connected. It is not limited to the method.

In the implementation of the conditioning method of the first embodiment, first, a cathode panel 10 and an anode panel 20 on which a number of field emission devices are formed are assembled. Specifically, for example, a frame 25 made of ceramics or glass and having a height of about 1 mm is prepared, and the frame 25, the cathode panel 10, and the anode panel 20 are bonded together using, for example, frit glass. After drying, baking is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the entire display device is heated, gas is released from the components of the cathode panel 10 and the components of the anode panel 20, and the gas is exhausted from the chip tube 27 attached to the through hole 26 provided in the cathode panel 10. Then, after the inside of the display device is evacuated to a degree of vacuum of about 10 ^-5 Pa to 10 ^-6 Pa, the display device is cooled to room temperature while evacuating the display device.

Thereafter, the conditioning method of the first embodiment is performed. FIG. 2 is a schematic partial end view of the display device when the conditioning is being performed. Specifically, the current detection cutoff circuit 40 is operated, the switching circuit 41 is turned on, and the high voltage circuit 42 and the anode electrode 24 are electrically connected. And the high voltage circuit 4
2 to the anode electrode 24
_A is gradually increased (for example, stepwise) to a predetermined value _VMAX . In the first embodiment, high-pressure gap between the cathode panel 10 and the anode panel 20 using the display device of 1 mm, is applied from the high voltage circuit 42 to the initial value of the high voltage circuit supply voltage V _A 5 kilovolts, stepwise once the rise [Delta] V _a of the circuit supply voltage V _a 0.1 kV,
The predetermined value V _MAX (final voltage reached) was set to 10 kV. Also, the total time required to increase the high-voltage circuit supply voltage _VA from 5 kV to 10 kV is 1 unit.
For 00 minutes, the predetermined time (t _OFF ) for interrupting the electrical connection between the high voltage circuit 42 and the anode electrode 24 was set to 10 nanoseconds. The specified value of the discharge current is set to 10 mA (the comparison value (reference voltage) in the comparison value generation means 51 is set to 1).
Millivolt).

The high-voltage circuit supply voltage V _A is increased to a predetermined value V _{MAX under} the above conditions. At this time, a discharge occurs between the anode electrode 24 and the gate electrode 14 at a certain high-voltage circuit supply voltage _VA . Note that when no discharge occurs, no current flows through the resistance element R, and the output from the comparator 50 is “L”. The output from the timer circuit 53 is also "L". Therefore, N
The output from the AND circuit 55 is "H", and the switching circuit 41 is on by the on / off driver 57. That is, from the high voltage circuit 42 to the anode electrode 24
Is supplied with the high-voltage circuit supply voltage _VA .

The discharge current causes the discharge current to flow through the resistance element R constituting the current detection cutoff means. Incidentally, the discharge current is usually about 100 milliamps. When the discharge current flows through the resistance element R, a voltage is generated across the resistance element R. When the discharge current exceeds the specified value, that is, when the value of this voltage is equal to the comparison value (reference voltage)
Is higher than the threshold value, the signal “H” is output from the comparator 50 to the latch circuit 52, and the output “H” of the latch circuit 52 becomes N
The signal is input to the AND circuit 55. Further, the output “H” of the latch circuit 52 is input to the timer circuit 53, the timer circuit 53 operates, and the signal “H” is output from the timer circuit 53. As a result, the output from the NAND circuit 55 becomes “L”, and the switching circuit 41 is turned off by the on / off driver 57. By the above,
A discharge current flowing through the current detection and cutoff means is detected due to generation of a discharge between the anode electrode 24 and the gate electrode 14, and when the discharge current exceeds a specified value, the high voltage is detected by the operation of the current detection and cutoff means. Circuit 42 and anode electrode 2
4 is cut off.

After a predetermined time (t _OFF ) controlled by the off-time setting means 54 has elapsed, the timer circuit 53
Is "L". As a result, the output from the NAND circuit 55 becomes “H”, and the switching circuit 41 is turned on by the on / off driver 57. That is, the high voltage circuit supply voltage _VA is applied from the high voltage circuit 42 to the anode electrode 24. On the other hand, the latch circuit 52 is reset. In this way, after the electrical connection between the high voltage circuit 42 and the anode electrode 24 is cut off for a predetermined time (t _OFF ), the electrical connection between the high voltage circuit 42 and the anode electrode 24 is automatically set. Then, the high voltage circuit 42 applies the high voltage circuit supply voltage _VA to the anode electrode 24. FIG. 4 schematically shows a temporal change in the voltage at both ends of the resistance element R caused by the discharge current and the high-voltage circuit supply voltage _VA applied to the anode electrode 24 when the conditioning is performed. .

Thus, for a predetermined time (t _OFF ),
Since the electrical connection between the high-voltage circuit 42 and the anode electrode 24 is cut off, in the implementation of the conditioning, the problem that the field emission element is damaged and the quality of image display is significantly impaired can be avoided. . Further, the electrical connection between the high voltage circuit 42 and the anode electrode 24 is automatically restored.

After the completion of the conditioning, the tip tube 2
7 is sealed off by heat fusion to seal the space between the cathode panel 10 and the anode panel 20 to complete the display device. Before the chip tube 27 is completely closed, the entire display device is heated again to release gas from the components of the cathode panel 10 and the components of the anode panel 20, and the gas is discharged to the through holes 26 provided in the cathode panel 10. It is preferable to exhaust air from the attached chip tube 27 and cool the display device to room temperature while evacuating the display device.

Then, as shown in FIG. 3, a schematic partial end view, that is, the cathode panel 10 and the anode panel 2
After sealing the space between zeros, the conditioning method described above may be performed again. In this case, the gas released from the components of the cathode panel 10 and the components of the anode panel 20 is absorbed by a getter (not shown) arranged in the space between the cathode panel 10 and the anode panel 20. Is done. Note that such an operation can be applied to the conditioning method described in the second to fourth embodiments.

(Embodiment 2) Embodiment 2 relates to a conditioning method according to the second aspect of the present invention.
FIG. 5 is a conceptual diagram of the display device according to the second embodiment. The display device according to the second embodiment can be the display device according to the first configuration including the field emission element having the first structure, similarly to the first embodiment. Omitted.

The conditioning means in the display device according to the second embodiment includes (A) a current detection interrupting means connected to the cathode electrode 12, and (B) an electrical connection to the anode electrode 24, and the electrical connection. A high-voltage circuit 42 whose state is controlled by the current detection cutoff means; (C) a gate voltage supply circuit 43 electrically connected to the gate electrode 14 via a gate driver 44; (D) a cathode electrode 12 and a gate. And a capacitor C disposed between the electrodes 14.

The current detecting and interrupting means may be the same as the current detecting and interrupting means described in the first embodiment.
3. Since the capacitor C may be a well-known circuit, driver, and capacitor, a detailed description is omitted.

In the implementation of the conditioning method according to the second embodiment, a voltage is applied from the gate voltage supply circuit 43 to the gate electrode 14 via the gate driver 44. At this time, electrons are emitted from the tip of the electron emission electrode 16A based on the quantum tunnel effect according to the electric field generated by applying a voltage to the gate electrode 14. Specifically, one end of the capacitor C is connected to the gate voltage supply circuit 43.
, And the other end is connected to the cathode electrode 12.

Then, the high voltage circuit 42 and the anode electrode 24
Are electrically connected by a switching circuit 41,
The high-voltage circuit supply voltage _VA applied from the high-voltage circuit 42 to the anode electrode 24 is gradually increased to a predetermined value _VMAX . Specifically, under the same conditions as in the first embodiment, the high voltage circuit supply voltage V _A, gradually, it is sufficient to increase to a predetermined value V _MAX.

While the high-voltage circuit supply voltage _VA is raised to the predetermined value _VMAX , the current flows through the capacitor C through the capacitor C due to the occurrence of discharge between the anode electrode 24 and the gate electrode 14. The discharge current (more specifically, the AC component of the discharge current) is detected, and when the discharge current exceeds a specified value, the high voltage circuit is activated for a predetermined time (t _OFF ) by the operation of the current detection cutoff means. 42 and anode electrode 24
Cuts off the electrical connection between Specifically, the same operation as in the first embodiment is performed. The anode electrode 2
Between the electron emission part 4 and the electron emission part,
Since a minute current (several microamps) flows due to the electrons that collide with the anode electrode 24, a voltage is generated at both ends of the resistance element R. The voltage is extremely smaller than the voltage caused by the discharge current.

(Embodiment 3) Embodiment 3 relates to a conditioning method according to the third aspect of the present invention.
Display device of Embodiment 3 (display device according to second configuration)
Is shown in FIG. Note that the display device according to the third embodiment has a first configuration including a field emission element having a first structure, as in the first embodiment, except that the focusing electrode 60 is provided. Since it can be a display device, detailed description is omitted. The focusing electrode will be described later.

Further, the conditioning means in the third embodiment can be the same as the conditioning means described in the first embodiment, so that the detailed description is omitted.

In the implementation of the conditioning method of the third embodiment, the cathode electrode 12, the gate electrode 14, and the focusing electrode 60 are short-circuited. Cathode electrode 1
No intentional resistance is provided between the gate electrode 14 and the gate electrode 14 or between the gate electrode 14 and the focusing electrode 60. When such a resistor is provided, when a discharge occurs between the anode electrode 24 and the focusing electrode 60, the gate electrode 14, or the electron emission electrode 16A, the gate electrode 14 and the cathode electrode 12
Or between the focusing electrode 60 and the gate electrode 14, which may cause damage to the field emission device.

Then, the high voltage circuit 42 and the anode 24
Are electrically connected by a switching circuit 41,
The high-voltage circuit supply voltage _VA applied from the high-voltage circuit 42 to the anode electrode 24 is gradually increased to a predetermined value _VMAX . Specifically, under the same conditions as in the first embodiment, the high voltage circuit supply voltage V _A, gradually, it is sufficient to increase to a predetermined value V _MAX.

While the high-voltage circuit supply voltage _VA is raised to a predetermined value _VMAX , a discharge current flowing through the current detection cut-off means due to generation of a discharge between the anode electrode 24 and the focusing electrode 60 is detected. When the discharge current exceeds a specified value, the predetermined time (t
_{During OFF} ), the electrical connection between the high voltage circuit 42 and the anode electrode 24 is cut off. Specifically, the same operation as in the first embodiment is performed.

(Embodiment 4) Embodiment 4 relates to a conditioning method according to a fourth aspect of the present invention.
FIG. 7 shows a conceptual diagram of the display device of the fourth embodiment. Note that the display device according to the fourth embodiment relates to the first configuration including the field emission element having the first structure, similarly to the second embodiment, except that the focusing electrode 60 is provided. Since it can be a display device, detailed description is omitted.

The conditioning means according to the fourth embodiment further includes a gate voltage supply circuit 43 electrically connected to the gate electrode described in the second embodiment, in addition to the conditioning means described in the first embodiment. Having a configuration. Further, in order to prevent the gate electrode 14 from being damaged by the discharge, the gate electrode 14 and the focusing electrode 6 are formed.
0 bypass capacitor C _B is disposed between the.

In the implementation of the conditioning method of the fourth embodiment, as in the third embodiment,
2, the gate electrode 14 and the focusing electrode 60 are short-circuited, and the cathode electrode 14 and the focusing electrode 60 are short-circuited. Is in a state where a voltage is applied. At this time, electrons are emitted from the tip of the electron emission electrode 16A based on the quantum tunnel effect according to the electric field generated by applying a voltage to the gate electrode 14.

Then, the high voltage circuit 42 and the anode 24
Are electrically connected by a switching circuit 41,
The high-voltage circuit supply voltage _VA applied from the high-voltage circuit 42 to the anode electrode 24 is gradually increased to a predetermined value _VMAX . Specifically, under the same conditions as in the first embodiment, the high voltage circuit supply voltage V _A, gradually, it is sufficient to increase to a predetermined value V _MAX.

During the time when the high-voltage circuit supply voltage _VA is raised to a predetermined value _VMAX , a discharge current flowing through the current detection cut-off means due to generation of a discharge between the anode electrode 24 and the focusing electrode 60 is detected. When the discharge current exceeds a specified value, the predetermined time (t
_{During OFF} ), the electrical connection between the high voltage circuit 42 and the anode electrode 24 is cut off. Specifically, the same operation as in the first embodiment is performed.

(Embodiment 5) Embodiment 5 relates to a conditioning method according to the fifth aspect of the present invention.
FIG. 8A is a conceptual diagram of the display device of the fifth embodiment. FIG. 12 is a schematic partial end view of the completed display device.
And a schematic exploded perspective view of a part of the cathode panel and the anode panel is the same as that shown in FIG.

This display device is the display device according to the first configuration, and the field emission element has the first structure. Since these can be the same as those in Embodiment 1, detailed description will be omitted. In the fifth embodiment, unlike the first embodiment, no current detection / interruption means is required, and the high voltage circuit 42 is electrically directly connected to the anode electrode 24. The high voltage circuit 42 can be constituted by a known circuit. The high-voltage circuit 42 is connected to a high-voltage circuit controller 45, which performs various controls of a pulsed high-voltage circuit supply voltage applied from the high-voltage circuit 42 to the anode electrode 24. The high-voltage circuit control device 45 can be a known device.

In the conditioning method according to the fifth embodiment, all cathode electrodes 12 and gate electrodes 14 are short-circuited. No intentional resistance is provided between the cathode electrode 12 and the gate electrode 14. When a resistor is provided between the cathode electrode 12 and the gate electrode 14, when a discharge occurs between the anode electrode 24 and the gate electrode 14, or between the anode electrode 24 and the electron emission electrode 16A, the gate electrode 14 This is because there is a possibility that the potential may increase between the electrode and the cathode electrode 12 and damage to the field emission device may occur. Specifically, for example, the cathode electrode 12
All of the wiring extending from the gate electrode 14 may be short-circuited by a conductive tape or the like, and all of the wiring extending from the gate electrode 14 may be short-circuited by a conductive tape or the like, and these conductive tapes and the like may be electrically connected. It is not limited to the method.

In the implementation of the conditioning method of the fifth embodiment, first, a cathode panel 10 and an anode panel 20 on which a number of field emission devices are formed are assembled in the same manner as in the first embodiment. Thereafter, the entire display device is heated, gas is released from the components of the cathode panel 10 and the components of the anode panel 20, and the gas is exhausted from the chip tube 27 attached to the through hole 26 provided in the cathode panel 10. And the inside of the display device is 10
After evacuating to a degree of vacuum of about ^-5 Pa to 10 ^-6 Pa, the display device is cooled to room temperature while evacuating the display device.

Thereafter, the conditioning method of the fifth embodiment is performed. That, is raised from the high pressure circuit 42 to a predetermined value PV _MAX pulsed high voltage circuit supply voltage applied to the anode electrode stepwise, the anode electrode 24 and the cold cathode field emission device (specifically, a gate electrode 14)
And a discharge is caused between them. In the fifth embodiment,
Pulsed pulse width (pulse width initial value) of the high pressure circuit supply voltage PW ₁₀ to 100 ms, extended time? Pw ₁ to 10 msec pulse width PW _1, a pulse period PW ₀ 1 second, a pulse voltage PV The initial value is 5 kV, the predetermined value of the pulse voltage value PV _MAX (final voltage reached) is 10 kV, the stepwise change amount of the pulse voltage value ΔPV is 0.1 kV, and the pulse shape in the step-like pulse voltage value is set. The total number of supply of the high-voltage circuit supply voltage is 600 times, and after the supply of the 600 pulse-like high-voltage circuit supply voltage, the pulse width PW ₁
Extension of In the fifth embodiment, the gap between cathode panel 10 and anode panel 20 is 1 mm.
Was used.

Then, the cathode panel 10 and the anode panel
The space between the tunnel 20 and the through-hole 26 and the tip tube 27
Pulse voltage value PV and pulse period while exhausting through
PW ₀And the pulse width PW₁While extending
The pulse voltage of the pulse voltage value PV is applied to the anode electrode.
A circuit supply voltage is applied [Step (a)]. This state,
FIG. 8B schematically shows this. That is, a certain pulse voltage
PW pulse width₁From the falling edge of the pulse to the next pulse
The time until the rise of PW_TwoAnd extended pal
Pulse width of PW '₁From the falling edge of the pulse
The time until the next pulse rises is PW '_TwoAnd
Then, the following relationship is established.

PW ₀ = PW ₁ + PW ₂ PW ₀ = PW ′ ₁ + PW ′ ₂ PW ′ ₁ = PW ₁ + ΔPW ₁ PW ′ ₂ = PW ₂ −ΔPW ₁

Here, the pulse width PW₁> Pulse period PW₀
, The pulse voltage value PV is increased by ΔPV.
[Step (b)]. Then, the pulse voltage value PV becomes a predetermined value.
PV _MAXSteps (a) and (b) are repeated until
Return.

The pulse-like high-voltage circuit supply voltage is increased stepwise to a predetermined value PV _{MAX under} the above-mentioned conditions. At this time, a discharge occurs between the anode electrode 24 and the gate electrode 14 at a certain pulsed high-voltage circuit supply voltage.

In the conditioning method according to the fifth embodiment, since the pulse-like high voltage supply voltage of the pulse voltage value PV is applied to the anode electrode, the continuation of the discharge can be suppressed, and the discharge can be terminated spontaneously. In addition, it is possible to prevent the occurrence of damage to the electron-emitting portion, and to reduce the amount of emitted gas generated at one time. Then, the pulse width PW ₁ is sequentially extended by ΔPW _1. At this time, even if a discharge occurs, the pulse-like high-voltage circuit supply voltage of the pulse voltage value PV is applied to the anode electrode. Can be suppressed, spontaneous termination can be achieved, damage to the electron-emitting portion can be prevented, and the amount of released gas generated at one time can be reduced.

[0115] Incidentally, the pulse width initial value PW ₁₀ of the pulsed high voltage circuit supply voltage, a pulsed high voltage circuit supply voltage applied to the anode electrode from the high voltage circuit 42 supplies a plurality of times, a pulse width initial value PW ₁₀ without changing, increasing the high voltage circuit supplying voltage by Pv, when the discharge is generated, starts the process (a), then, until the pulse voltage PV reaches a predetermined value PV _MAX, step (a) and A method of repeating step (b) may be employed. The same applies to Embodiments 6 to 8 described below. By employing such a method, useless time can be omitted, and the time required for conditioning can be reduced.

After the completion of the conditioning, the entire display device was heated to release the gas from the components of the cathode panel 10 and the components of the anode panel 20 again. The gas is exhausted from the chip tube 27 and the inside of the display device is 10 ^-5 P
After reaching a degree of vacuum of about a −10 ⁻⁶ Pa, the display device may be cooled to room temperature while evacuating the display device. As a result, the cathode panel 1
The gas remaining in the space between 0 and the anode panel 20 can be reliably removed from the system. Thereafter, the tip tube 27 is sealed off by heat fusion, and the cathode panel 10
The space between the anode and the anode panel 20 is sealed to complete the display device.

While the space between the cathode panel 10 and the anode panel 20 is evacuated, the pulse voltage PV
Until the predetermined value PV _MAX is reached,
And step (b) are repeated, and then the cathode panel 1
0 and after sealing the space between the anode panel 20, after completion of the display device, prior to shipment, until the pulse voltage PV reaches a predetermined value PV _MAX, the above-mentioned steps (a) and (b ) May be repeatedly executed. Note that such a method can also be applied to the conditioning methods in various embodiments described below.

Alternatively, after the space between the cathode panel and the anode panel is sealed, that is, when the luminance of the display device is reduced due to long-time use of the display device after completion of the display device, , The pulse voltage value PV is a predetermined value P
Steps (a) and (b) described above until V _MAX is reached
May be repeatedly executed. Such a method can also be applied to the conditioning methods in various embodiments described below.

In this case, the high-voltage circuit controller 45
Must be incorporated in a cold cathode field emission display. As the high-voltage circuit 42, an anode electrode control circuit may be used, but it is necessary that the output voltage of the anode electrode control circuit be variable. In the conditioning methods according to Embodiments 6 and 8 described below, a gate electrode control circuit incorporated in a cold cathode field emission display may be used as a gate voltage supply circuit. In the conditioning method according to the fifth embodiment, since the cathode electrode and the gate electrode need to be in a short-circuit state, for example, all the cathode electrodes and the gate electrode can be short-circuited by grounding. It is necessary to have such a circuit configuration. Furthermore,
In the conditioning method according to the seventh embodiment to be described later, it is necessary to short-circuit the cathode electrode, the gate electrode, and the focusing electrode. It is necessary to have a circuit configuration that can be in a short-circuit state. In the conditioning method according to the eighth embodiment, since the cathode electrode and the focusing electrode need to be short-circuited, for example, all the cathode electrodes and the focusing electrode may be grounded to be short-circuited. It is necessary to have a circuit configuration that can be used. Furthermore, in Embodiment 6 or Embodiment 8 to be described later, it is necessary to incorporate a bypass capacitor into a cold cathode field emission display.

Further, in the step (a), in accordance with the discharge frequency and / or discharge current between the anode electrode and the cold cathode field emission device, that is, a large amount of discharge occurs, or If the value is high, the pulse width PW _1, once may be shortened. This reduces the frequency of discharge,
The value of the discharge current can be reduced, and damage to the field emission device can be reliably prevented.
The discharge frequency and / or discharging current of detection performed automatically by things, can be performed to shorten the pulse width PW ₁ automatically may be performed to shorten the pulse width PW ₁ manually.
Such processing can also be applied to the conditioning methods in various embodiments described below.

Alternatively, in the step (a), in accordance with the discharge frequency and / or discharge current between the anode electrode and the cold cathode field emission device, that is, a large amount of discharge occurs,
Alternatively, if the value of the discharge current is high, the pulse voltage value P
V may be temporarily reduced. This can also reduce the frequency of discharge and the value of discharge current, and can reliably prevent the field emission device from being damaged. The pulse voltage value PV can be automatically reduced by automatically detecting the discharge frequency and / or the discharge current. However, the pulse voltage value PV may be manually reduced. Such processing can also be applied to the conditioning methods in various embodiments described below.

Alternatively, in the step (a), in accordance with the discharge frequency and / or discharge current between the anode electrode and the cold cathode field emission device, ie, a large amount of discharge occurs,
Alternatively, when the value of the discharge current is high, the pulse width PW ₁
May be suspended. Alternatively, the number of times of supplying the pulse-like high voltage circuit supply voltage at the step-like pulse voltage value may be increased, or the total supply time may be extended. This can also reduce the frequency of discharge and the value of discharge current, and can reliably prevent the field emission device from being damaged. Note that these processes can be automatically performed by automatically detecting the discharge frequency and / or discharge current, but these processes may be performed manually. These processes can also be applied to the conditioning methods in various embodiments described below.

(Embodiment 6) Embodiment 6 is a modification of the conditioning method of Embodiment 5. FIG. 9 shows a conceptual diagram of the display device of the sixth embodiment. Note that the display device according to the sixth embodiment has the first
The display device according to the above configuration is a field emission device having the first structure, and detailed description is omitted. In the conditioning method according to the sixth embodiment, the gate electrode 14
A gate voltage supply circuit 43 electrically connected via a gate driver 44 is used. Bypass capacitor C _B is disposed between the gate electrode 14 and the cathode electrode 12. Thus, it is possible to prevent the gate electrode 14 from being damaged by the discharge. Other configurations can be the same as those in the fifth embodiment.
Detailed description is omitted. The gate driver 44, the gate voltage supply circuit 43, a bypass capacitor C _B is well-known driver circuit, it is only necessary to a capacitor,
Detailed description is omitted.

In the implementation of the conditioning method of the sixth embodiment, a state is assumed in which a voltage is applied from the gate voltage supply circuit 43 to the gate electrode 14 via the gate driver 44. At this time, electrons are emitted from the tip of the electron emission electrode 16A based on the quantum tunnel effect according to the electric field generated by applying a voltage to the gate electrode 14. still,
The voltage applied from the gate voltage supply circuit 43 to the gate electrode 14 may be constant or may be increased stepwise. The same applies to an eighth embodiment described later.

In the implementation of the conditioning method of the sixth embodiment, the same operation as that of the fifth embodiment may be specifically performed, and therefore a detailed description is omitted.

(Embodiment 7) Embodiment 7 is also a modification of the conditioning method of Embodiment 5. FIG. 10 shows a conceptual diagram of the display device of Embodiment 7 (the display device according to the second configuration). Note that the display device according to the seventh embodiment relates to the first configuration including the field emission element having the first structure, similarly to the fifth embodiment, except that the focusing electrode 60 is provided. Since it can be a display device, detailed description is omitted.

In the implementation of the conditioning method of the seventh embodiment, the cathode electrode 12, the gate electrode 14, and the focusing electrode 60 are short-circuited. Cathode electrode 1
No intentional resistance is provided between the gate electrode 14 and the gate electrode 14 or between the gate electrode 14 and the focusing electrode 60. When such a resistor is provided, when a discharge occurs between the anode electrode 24 and the focusing electrode 60, the gate electrode 14, or the electron emission electrode 16A, the gate electrode 14 and the cathode electrode 12
Or between the focusing electrode 60 and the gate electrode 14, which may cause damage to the field emission device.

In the implementation of the conditioning method of the seventh embodiment, the same operation as that of the fifth embodiment may be performed, and a detailed description thereof will be omitted.

(Eighth Embodiment) The eighth embodiment is also a modification of the conditioning method of the fifth embodiment. FIG. 11 shows a conceptual diagram of the display device of the eighth embodiment. Note that the display device according to Embodiment 8 relates to the first configuration including the field emission element having the first structure, similarly to Embodiment 6, except that the focusing electrode 60 is provided. Since the display device can be used, a detailed description is omitted.

The conditioning means according to the eighth embodiment includes a high-voltage circuit 42 and a high-voltage circuit control device 45 described in the fifth embodiment, and a gate voltage electrically connected to the gate electrode described in the sixth embodiment. The configuration further includes a supply circuit 43. Further, in order to prevent the gate electrode 14 from being damaged by the discharge,
Bypass capacitor C _B is disposed between the focusing electrode 60 and.

In the implementation of the conditioning method of the eighth embodiment, the cathode electrode 1
2, the gate electrode 14 and the focusing electrode 60 are short-circuited, and the cathode electrode 14 and the focusing electrode 60 are short-circuited. Is in a state where a voltage is applied. At this time, electrons are emitted from the tip of the electron emission electrode 16A based on the quantum tunnel effect according to the electric field generated by applying a voltage to the gate electrode 14.

In the implementation of the conditioning method of the eighth embodiment, the same operation as that of the fifth embodiment may be performed, and a detailed description thereof will be omitted.

(Embodiment 9) Various field emission devices will be described below, and the configuration of a display device using these field emission devices may be the first configuration and the second configuration.

[Spindt Field Emission Device] FIG. 15B is a schematic partial end view of a field emission device having the first structure including the Spindt field emission device. The Spindt-type field emission device includes a cathode electrode 12 formed on a support 11, an insulating layer 13 formed on the support 11 and the cathode electrode 12, a gate electrode 14 formed on the insulating layer 13, An opening 15 penetrating through the gate electrode 14 and the insulating layer 13 and a conical electron emission electrode 16A provided on the cathode electrode 12 located at the bottom of the opening 15 are formed. The conical electron emission electrode 16 </ b> A exposed at the bottom of the opening 15 corresponds to the electron emission portion 16.

The manufacturing method of the Spindt-type field emission device is basically a method of forming the conical electron emission electrode 16A by vertical vapor deposition of a metal material. That is, the vapor deposition particles vertically enter the opening 15, but the vapor deposition particles reach the bottom of the opening 15 by utilizing the shielding effect of the overhang-like deposit formed near the opening 15. Of the electron emission electrode 16A which is a conical deposit.
Are formed in a self-aligned manner. Here, in order to facilitate removal of unnecessary overhang-like deposits, a method of forming a peeling layer 17 on the gate electrode 14 in advance is described.
This will be described with reference to FIGS. 14 and 15 which are schematic partial end views of the support and the like.

[Step-100] First, a striped cathode electrode 12 made of niobium (Nb) is formed on a support 11 made of, for example, a glass substrate.
₂ is formed, and further, a gate electrode 14 is formed.
Is formed on the insulating layer 13. The formation of the gate electrode 14
For example, it can be performed based on a sputtering method, a lithography technique, and a dry etching technique. Next, an opening 15 is formed in the gate electrode 14 and the insulating layer 13 by RIE (reactive ion etching), and the cathode electrode 12 is exposed at the bottom of the opening 15 (FIG. 14A).
reference). Note that the cathode electrode 12 may be a single material layer, or may be configured by laminating a plurality of material layers. For example, the surface layer of the cathode electrode 12 can be made of a material having a higher electrical resistivity than the remaining portion in order to reduce the variation in the electron emission characteristics of each electron emission electrode formed in a later step.

[Step-110] Next, the electron emission electrode 16A is placed on the cathode electrode 12 exposed at the bottom of the opening 15.
To form Specifically, first, the release layer 17 is formed by obliquely depositing aluminum. At this time,
By selecting a sufficiently large incident angle of the deposited particles with respect to the normal of the support 11, the peeling layer 17 is formed on the gate electrode 14 and the insulating layer 13 without depositing aluminum almost at the bottom of the opening 15. be able to. The release layer 17 protrudes like an eave from the opening end of the opening 15, whereby the diameter of the opening 15 is substantially reduced (see FIG. 14B).

[Step-120] Next, for example, molybdenum (Mo) is vertically deposited on the entire surface. At this time, as shown in FIG. 15A, as the conductor layer 18 made of molybdenum having an overhang shape grows on the release layer 17, the substantial diameter of the opening 15 is gradually reduced. Therefore, the vapor deposition particles contributing to the deposition at the bottom of the opening 15 are gradually limited to those passing near the center of the opening 15. As a result, a conical deposit is formed at the bottom of the opening 15, and the conical deposit of molybdenum becomes the electron emission electrode 16A.

After that, the peeling layer 17 is formed by the electrochemical process and the wet process to form the insulating layer 13 and the gate electrode 1.
4, the conductive layer 18 above the insulating layer 13 and the gate electrode 14 is selectively removed. As a result, as shown in FIG. 15B, the conical electron emission electrode 16A can be left on the cathode electrode 12 located at the bottom of the opening 15.

One example of a method for manufacturing the anode panel 20 is as follows.
Hereinafter, description will be made with reference to FIG. First, a luminescent crystal particle composition is prepared. For this purpose, for example, a dispersant is dispersed in pure water, and the mixture is stirred for 1 minute at 3000 rpm using a homomixer. Next, the luminescent crystal particles are put into pure water in which a dispersant is dispersed, and 50
Stir at 00 rpm for 5 minutes. Then, for example,
Add polyvinyl alcohol and ammonium bichromate, stir well and filter.

In the manufacture of the anode panel 20, a photosensitive coating 70 is formed on the entire surface of the substrate 21 made of, for example, glass.
Is formed (applied). Then, the photosensitive coating 70 formed on the substrate 21 is exposed by exposure light emitted from an exposure light source (not shown) and passing through an opening 74 provided in the mask 73 to form a photosensitive region 71 ( FIG. 16A). Thereafter, the photosensitive coating 70 is developed and selectively removed to leave the remaining photosensitive coating (the exposed and developed photosensitive coating) 72 on the substrate 21 (see FIG. 16B). Next, a carbon agent (carbon slurry) is applied to the entire surface, dried and baked, and then the remaining portion 72 of the photosensitive film and the carbon agent thereon are removed by a lift-off method, so that the carbon on the exposed substrate 21 is removed. A black matrix 23 made of an agent is formed, and at the same time, the remaining portion 72 of the photosensitive film is removed (see FIG. 16C). afterwards,
On the exposed substrate 21, red, green, and blue phosphor layers 22
(22R, 22G, 22B) are formed (see FIG. 16D). Specifically, using a luminescent crystal particle composition prepared from each luminescent crystal particles (phosphor particles),
For example, a red photosensitive luminescent crystal particle composition (phosphor slurry) is applied to the entire surface, exposed and developed, and then a green photosensitive luminescent crystal particle composition (phosphor slurry)
May be applied over the entire surface, exposed and developed, and further, a blue photosensitive luminescent crystal particle composition (phosphor slurry) may be applied over the entire surface, exposed and developed. Thereafter, an anode electrode 24 made of an aluminum thin film having a thickness of about 0.07 μm is formed on the phosphor layer 22 and the black matrix 23 by a sputtering method. Note that the respective phosphor layers 22 can also be formed by a screen printing method or the like.

The anode electrode may be a type in which the effective area is covered with one sheet of conductive material, or may correspond to one or a plurality of electron-emitting portions or one or a plurality of pixels. An anode electrode of a type in which anode electrode units are assembled may be used.

[Crown Field Emission Element] FIG. 19A is a schematic partial end view of a field emission element having a first structure composed of a crown field emission element, and is partially cut away. FIG. 19B is a schematic perspective view. The crown type field emission device includes a cathode electrode 12 formed on a support 11, an insulating layer 13 formed on the support 11 and the cathode electrode 12, a gate electrode 14 formed on the insulating layer 13, An opening 15 penetrating through the gate electrode 14 and the insulating layer 13, and a crown-type electron emission electrode 16 </ b> B provided on a portion of the cathode electrode 12 located at the bottom of the opening 15. Opening 15
(Crown) type electron emission electrode 1 exposed at the bottom
6B corresponds to the electron emission section 16.

Hereinafter, a method for manufacturing a crown type field emission device will be described with reference to FIGS. 17 to 19 which are schematic partial end views of a support and the like.

[Step-200] First, a striped cathode electrode 1 is placed on a support 11 made of, for example, a glass substrate.
Form 2 Note that the cathode electrode 12 extends in the left-right direction on the drawing sheet. Striped cathode electrode 12
For example, after an ITO film is formed on the support 11 over the entire surface to a thickness of about 0.2 μm by a sputtering method,
It can be formed by patterning an ITO film. Note that the cathode electrode 12 may be a single material layer, or may be configured by laminating a plurality of material layers. For example, the surface layer of the cathode electrode 12 can be made of a material having a higher electrical resistivity than the remaining portion in order to reduce the variation in the electron emission characteristics of each electron emission electrode formed in a later step. Next, the support 11
Then, an insulating layer 13 is formed on the cathode electrode 12. Here, as an example, a glass paste is screen-printed on the entire surface to a thickness of about 3 μm. Next, in order to remove moisture and a solvent contained in the insulating layer 13 and to planarize the insulating layer 13, for example, calcination at 100 ° C. for 10 minutes, and 50 ° C.
Two-stage firing such as main firing at 0 ° C. for 20 minutes is performed. Instead of the screen printing using the glass paste as described above, for example, the SiO
_Two films may be formed.

Next, a gate electrode 14 in the form of a stripe is formed on the insulating layer 13 (see FIG. 17A). still,
The gate electrode 14 extends in a direction perpendicular to the plane of the drawing.
The gate electrode 14 has, for example, a thickness of about 20
nm chrome (Cr) film and 0.2 μm thick gold (Au)
A film can be formed by forming a film over the entire surface in this order by an electron beam evaporation method, and then patterning the laminated film. Note that the chromium film is formed to compensate for the lack of adhesion of the gold film to the insulating layer 13. Gate electrode 1
The direction in which the projected image of FIG. 4 extends is 90 degrees with the direction in which the projected image of the striped cathode electrode 12 extends.

[Step-210] Next, the gate electrode 14 and the insulating layer 13 are etched by an RIE method using an etching mask made of, for example, a photoresist material, and an opening 15 is formed in the gate electrode 14 and the insulating layer 13. Then, the cathode electrode 12 is exposed at the bottom of the opening 15 (see FIG. 17B). The diameter of the opening 15 is about 2 to 5
0 μm.

[Step-220] Next, the etching mask is removed, and a peeling layer 80 is formed on the gate electrode 14, the insulating layer 13, and the side wall surface of the opening 15 (FIG. 18A). reference). In order to form the release layer 80, for example, a photoresist material may be applied to the entire surface by a spin coating method, and patterning may be performed so as to remove only a part (central part) of the bottom of the opening 15. At this point, the substantial diameter of the opening 15 is reduced to about 1-20 μm.

[Step-230] Next, as shown in FIG. 18B, a conductive composition layer 81 made of a composition material is formed on the entire surface. The composition raw material used here contains, for example, 60% by weight of graphite particles having an average particle size of about 0.1 μm as conductive particles, and 40% by weight of No. 4 water glass as a binder. This composition raw material is, for example, 1400 rpm,
Spin coating is performed on the entire surface for 10 seconds. Opening 15
The inside surface of the conductive composition layer 81 rises along the side wall surface of the opening 15 due to the surface tension of the composition raw material, and becomes concave toward the center of the opening 15. afterwards,
Preliminary baking for removing moisture contained in the conductive composition layer 81 is performed, for example, in the air at 400 ° C. for 30 minutes.

In the raw materials for the composition, the binder is (1)
It may itself be a dispersion medium of conductive particles,
(2) The conductive particles may be coated, or (3) a dispersion medium of the conductive particles may be formed by being dispersed or dissolved in an appropriate solvent. A typical example of the case (3) is water glass, which is a Japanese Industrial Standard (JIS) K140.
Nos. 1 to 4 specified in No. 8 or equivalents thereof can be used. Nos. 1 to 4 are four-grade grades based on the difference in the number of moles (about 2 to 4 moles) of silicon oxide (SiO ₂ ) with respect to 1 mole of sodium oxide (Na ₂ O) as a constituent of water glass. , Each greatly differ in viscosity. Therefore, when using water glass in the lift-off process, various conditions such as the type and content of the conductive particles dispersed in the water glass, affinity with the release layer 80, and the aspect ratio of the opening 15 are taken into consideration. It is preferred to select the optimal grade of water glass or to prepare and use water glass equivalent to these grades.

Since the binder is generally inferior in conductivity, if the content of the binder is too large relative to the content of the conductive particles in the composition raw material, the electric resistance of the formed electron emission electrode 16B increases, There is a concern that electron emission may not be performed smoothly. Therefore, for example, in the case of a composition raw material obtained by dispersing carbon-based material particles as conductive particles in water glass, for example, the ratio of the carbon-based material particles to the total weight of the composition raw material is determined by the ratio of the electron emission electrode 16B. Considering properties such as electric resistance, viscosity of the composition raw material, and adhesion between conductive particles,
It is preferable to select approximately in the range of 30 to 95% by weight. By selecting the ratio of the carbon-based material particles within such a range, it becomes possible to sufficiently reduce the electric resistance of the formed electron-emitting electrode 16B and to maintain good adhesion between the carbon-based material particles. . However, when the alumina particles are mixed with the carbon-based material particles as the conductive particles, the adhesiveness between the conductive particles tends to decrease. It is preferable to increase the proportion of
It is particularly preferable to set the above. In addition, the composition raw materials include
Dispersant for stabilizing the dispersed state of the conductive particles,
Additives such as a pH adjuster, a desiccant, a hardener, and a preservative may be included. Alternatively, a composition raw material obtained by dispersing a powder in which conductive particles are covered with a coating of a binder (binder) in an appropriate dispersion medium may be used.

As an example, a crown-shaped electron emission electrode 16B
Is approximately 1 to 20 μm, and when carbon-based material particles are used as the conductive particles, the particle size of the carbon-based material particles is preferably in the range of approximately 0.1 μm to 1 μm. By selecting the particle diameter of the carbon-based material particles in such a range, a sufficiently high mechanical strength is provided at the edge of the crown-shaped electron emission electrode 16B, and the cathode electrode 12
The adhesion of the electron emission electrode 16B to the electrode becomes good.

[Step-240] Next, as shown in FIG. 18C, the release layer 80 is removed. Peeling is 2% by weight
In sodium hydroxide aqueous solution for 30 seconds. At this time, the peeling may be performed while applying ultrasonic vibration. Thereby, together with the release layer 80, the release layer 8
0 is removed, and the opening 1
Only the portion of the conductive composition layer 81 on the cathode electrode 12 exposed at the bottom of the layer 5 is left. The remaining portion becomes the electron emission electrode 16B. The shape of the electron emission electrode 16B is
The surface is depressed toward the center of the opening 15 to form a crown. The state at the end of [Step-240] is
As shown in FIG. FIG. 19B is a schematic perspective view showing a part of the field emission device, and FIG.
FIG. 3B is a schematic partial end view taken along line AA of FIG. In FIG. 19B, a part of the insulating layer 13 and a part of the gate electrode 14 are cut away so that the entire electron emission electrode 16B can be seen. In addition, 5 to 100
It is sufficient to provide about two electron emission electrodes 16B. Note that the binder exposed on the surface of the electron emission electrode 16B may be removed by etching so that the conductive particles are reliably exposed on the surface of the electron emission electrode 16B.

[Step-250] Next, the electron emission electrode 16
B is fired. The firing is performed at 400 ° C. in a dry atmosphere at 3 ° C.
Perform under the condition of 0 minutes. In addition, what is necessary is just to select a baking temperature according to the kind of binder contained in a composition raw material. For example, when the binder is an inorganic material such as water glass, heat treatment may be performed at a temperature at which the inorganic material can be fired.
When the binder is a thermosetting resin, the heat treatment may be performed at a temperature at which the thermosetting resin can be cured. However, in order to maintain the adhesion between the conductive particles, it is preferable to perform the heat treatment at a temperature at which the thermosetting resin does not excessively decompose or carbonize. Whichever binder is used, the heat treatment temperature needs to be a temperature at which no damage or defects occur in the gate electrode, the cathode electrode, and the insulating layer. The heat treatment atmosphere is preferably an inert gas atmosphere so that the electrical resistivity of the gate electrode or the cathode electrode does not increase due to oxidation or a defect or damage does not occur in the gate electrode or the cathode electrode. When a thermoplastic resin is used as a binder, heat treatment may not be required.

[Flat Field Emission Element (Part 1)] FIG. 20C is a schematic partial sectional view of a field emission element having a first structure composed of a flat field emission element. The flat field emission device includes a cathode electrode 12 formed on a support 11 made of, for example, glass, an insulating layer 13 formed on the support 11 and the cathode electrode 12, and a gate electrode 14 formed on the insulating layer 13. , An opening 15 penetrating through the gate electrode 14 and the insulating layer 13, and a flat electron emission electrode 16 </ b> C provided on a portion of the cathode electrode 12 located at the bottom of the opening 15. Here, the electron emission electrode 16C is formed on the striped cathode electrode 12 extending in the direction perpendicular to the paper surface of FIG. The gate electrode 14 extends in the left-right direction on the paper of FIG. The cathode electrode 12 and the gate electrode 14 are made of chromium. The electron emission electrode 16C is, specifically,
It consists of a thin layer of graphite powder. Further, a resistor layer 82 made of SiC is provided between the cathode electrode 12 and the electron emission electrode 16C in order to stabilize the operation of the field emission device and make the electron emission characteristics uniform. In the flat field emission device shown in FIG.
A resistor layer 82 is formed over the entire surface of the cathode electrode 12.
Although the electron emission electrode 16C is formed, the present invention is not limited to such a structure. The point is that the electron emission electrode 16C is provided at least at the bottom of the opening 15.

Hereinafter, a method for manufacturing a flat field emission device will be described with reference to FIG. 20, which is a schematic partial cross-sectional view of a support and the like.

[Step-300] First, on the support 11,
After a cathode electrode conductive material layer made of chromium (Cr) is formed by a sputtering method, the cathode electrode conductive material layer is patterned based on a lithography technique and a dry etching technique. Thus, the striped cathode electrode 12 can be formed on the support 11 (see FIG. 20A). The cathode electrode 12 is
It extends in the direction perpendicular to the plane of FIG.

[Step-310] Next, the cathode electrode 12
The electron emission electrode 16C is formed thereon. Specifically, first, a resistor layer 82 made of SiC is formed on the entire surface by sputtering, and then an electron emission electrode 16C made of graphite powder paint is formed on the resistor layer 82 by spin coating. Then, the electron emission electrode 16C is dried. After that, the electron emission electrode 16C and the resistor layer 82 are patterned based on a known method (see FIG. 20B). The electron emission section is constituted by an electron emission electrode 16C.

[Step-320] Next, the insulating layer 13 is formed on the entire surface.
To form Specifically, the insulating layer 13 made of SiO ₂ is formed on the electron emission electrode 16C and the support 11 by, for example, a sputtering method. The insulating layer 13 can be formed based on a method of screen printing a glass paste or a method of forming an SiO ₂ layer by a CVD method. Then, the stripe-shaped gate electrode 14 is
3 is formed.

[Step-330] Next, after providing an etching mask, an opening 15 is formed in the gate electrode 14 and the insulating layer 13, and the electron emission electrode 16 C is formed at the bottom of the opening 15.
To expose. After that, the etching mask is removed,
In order to remove the organic solvent in the electron emission electrode 16C, 4
A heat treatment is performed at 00 ° C. for 30 minutes. Thus, the field emission device shown in FIG. 20C can be obtained.

[Flat-Type Field Emission Element (No. 2)] FIG. 21C is a schematic partial sectional view of a modification of the field-emission element having the first structure including the flat-type field emission element. Show. In the flat field emission device shown in FIG. 21C, the structure of the electron emission electrode 16C is slightly different from the flat field emission device shown in FIG. Hereinafter, with reference to FIG. 21 which is a schematic partial cross-sectional view of a support and the like,
A method for manufacturing such a field emission device will be described.

[Step-400] First, a conductive material layer for a cathode electrode is formed on the support 11. Specifically, after forming a resist material layer (not shown) on the entire surface of the support 11, the resist material layer where the cathode electrode is to be formed is removed. Thereafter, a cathode electrode conductive material layer made of chromium (Cr) is formed on the entire surface by a sputtering method. Further, a resistor layer 82 made of SiC is formed on the entire surface by a sputtering method, and then a graphite powder coating layer is formed on the resistor layer 82 by a spin coating method, and the graphite powder coating layer is dried. Thereafter, when the resist material layer is removed using a stripping solution, the cathode electrode conductive material layer, the resistor layer 82 and the graphite powder paint layer formed on the resist material layer are also removed. Thus, a structure in which the cathode electrode 12, the resistor layer 82, and the electron emission electrode 16C are stacked can be obtained (FIG. 21).
(A)).

[Step-410] Next, the insulating layer 13 is formed on the entire surface.
Is formed, a gate electrode 14 having a stripe shape is formed on the insulating layer 13 (see FIG. 21B). After that, an opening 15 is formed in the gate electrode 14 and the insulating layer 13 to expose the electron emission electrode 16C at the bottom of the opening 15 (see FIG. 21C). The electron emission electrode 16C provided on the surface of the cathode electrode 12 exposed at the bottom of the opening 15 corresponds to an electron emission portion.

[Flat Field Emission Element (No. 3)] A schematic partial end view of another modification of the field emission element having the first structure composed of the flat field emission element is shown in FIG. )
Shown in In this flat type field emission device, the electron emission electrode 16D is formed of a carbon thin film formed based on a CVD method.

It is preferable to form the electron emission portion from a carbon thin film because the work function of carbon (C) is low and a high emission electron current can be achieved. In order to emit electrons from the carbon thin film, the carbon thin film may be placed in an appropriate electric field (for example, an electric field having an intensity of about 10 ⁶ volt / cm).

When a carbon thin film such as a diamond thin film is subjected to plasma etching using an oxygen gas using the resist layer as an etching mask, (CH _x ) is a reaction by-product in an etching reaction system.
A carbon-based polymer such as a polymer or (CF _x ) is generated as a depositable substance. Generally, when a depositable substance is generated in an etching reaction system in plasma etching, this depositable substance is deposited on a side wall surface of a resist layer having a low probability of ion incidence or a processed end surface of an etching target to form a so-called side wall protective film. This contributes to achieving a shape obtained by anisotropic processing of the object to be etched. However, when an oxygen gas is used as an etching gas, the sidewall protective film made of a carbon-based polymer is immediately removed by the oxygen gas even if formed. Further, when oxygen gas is used as an etching gas, the resist layer is greatly consumed. For these reasons, in the conventional oxygen plasma processing of a diamond thin film, the dimensional conversion difference with respect to the mask dimension of the diamond thin film is large, and anisotropic processing is often difficult.

In order to solve such a problem, for example, a structure in which a carbon thin film selective growth region is formed on the surface of the cathode electrode and an electron emission portion made of a carbon thin film is formed on the carbon thin film selective growth region may be adopted. I just need. That is, in the manufacture of this field emission device, a cathode electrode is formed on a support, a carbon thin film selective growth region is formed on the surface of the cathode electrode, and then a carbon thin film (electron emission region) is formed on the carbon thin film selective growth region. (Corresponding to a part). The step of forming a carbon thin film selective growth region on the surface of the cathode electrode is referred to as a carbon thin film selective growth region forming step.

Here, the carbon thin film selective growth region is preferably a portion of the cathode electrode having metal particles adhered on the surface or a portion of the cathode electrode having a metal thin film formed on the surface. In order to further secure the selective growth of the carbon thin film in the carbon thin film selective growth region, sulfur (S), boron (B)
Or it is desirable that phosphorus (P) is attached, and these substances are considered to act as a kind of catalyst,
Thereby, the selective growth of the carbon thin film can be further improved. The carbon thin film selective growth region may be formed on the surface of the portion of the cathode electrode located at the bottom of the opening. May be formed to extend to the surface of the portion. Further, the carbon thin film selective growth region may be formed on the entire surface of the portion of the cathode electrode located at the bottom of the opening, or may be formed partially.

The step of forming the carbon thin film selective growth region is performed on the surface of the portion of the cathode electrode where the carbon thin film selective growth region is to be formed (hereinafter, simply referred to as the cathode electrode surface).
A step of depositing metal particles or forming a metal thin film, thereby forming a carbon thin film selective growth region comprising a portion of a cathode electrode having metal particles attached to the surface or a metal thin film formed on the surface. It is preferable to obtain. In this case, in order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region, sulfur (S), boron (B) or phosphorus (P) is added to the surface of the carbon thin film selective growth region. It is desirable to attach
The selective growth of the carbon thin film can be further improved.
As a method of attaching sulfur, boron or phosphorus to the surface of the carbon thin film selective growth region, for example, a compound layer made of a compound containing sulfur, boron or phosphorus is formed on the surface of the carbon thin film selective growth region, and then, for example, heating is performed. By subjecting the compound layer to treatment, the compound constituting the compound layer is decomposed to leave sulfur, boron, or phosphorus on the surface of the carbon thin film selective growth region. Examples of the compound containing sulfur include thionaphthene, thiophthene, and thiophene. Examples of the compound containing boron include triphenylboron. Examples of the phosphorus-containing compound include triphenylphosphine.

Alternatively, in order to further ensure the selective growth of the carbon thin film in the carbon thin film selective growth region,
Attach metal particles to the cathode electrode surface, or
After forming the metal thin film, it is desirable to remove the metal oxide (so-called natural oxide film) on the surface of the metal particles or the surface of the metal thin film. The removal of the metal oxide on the surface of the metal particles or the surface of the metal thin film can be performed by, for example, a microwave plasma method, a trans-coupled plasma method, an inductively-coupled plasma method, an electron cyclotron resonance plasma method, an RF plasma method or the like in a hydrogen gas atmosphere. It is preferable to perform the plasma reduction process based on the above, a sputtering process in an argon gas atmosphere, or a cleaning process using an acid or a base such as hydrofluoric acid. In the case where a step of adhering sulfur, boron or phosphorus to the surface of the carbon thin film selective growth region, or a step of removing metal oxide on the surface of the metal particles or the surface of the metal thin film, an opening is formed in the insulating layer. It is preferable to perform these steps after the provision and before the formation of the carbon thin film on the carbon thin film selective growth region.

As a method of attaching metal particles to the cathode electrode surface to obtain a carbon thin film selective growth region, for example, a region other than the cathode electrode region where the carbon thin film selective growth region is to be formed is made of an appropriate material (for example, a mask). After forming a layer composed of a solvent and metal particles on the surface of the portion of the cathode electrode where the carbon thin film selective growth region is to be formed in a state covered with the layer, the solvent is removed to leave the metal particles. it can. Alternatively, as a step of attaching metal particles to the surface of the cathode electrode, for example, in a state where a region other than the region of the cathode electrode where the carbon thin film selective growth region is to be formed is covered with an appropriate material (for example, a mask layer), After the metal compound particles containing metal atoms constituting the particles are attached to the surface of the cathode electrode, the metal compound particles are decomposed by heating, thereby forming a carbon thin film comprising a portion of the cathode electrode having the metal particles attached to the surface. A method for obtaining a selective growth region can be given. In this case, specifically, after forming a layer comprising a solvent and metal compound particles on the surface of the portion of the cathode electrode where the carbon thin film selective growth region is to be formed,
A method of removing the solvent and leaving the metal compound particles can be exemplified. The metal compound particles are made of at least one material selected from the group consisting of metal halides (e.g., iodides, chlorides, bromides, etc.), oxides, hydroxides, and organic metals that constitute the metal particles. Is preferred. In these methods, at an appropriate stage, a material (for example, a mask layer) covering a region other than the region of the cathode electrode where the carbon thin film selective growth region is to be formed is removed.

As a method for forming a metal thin film on the cathode electrode surface in order to obtain a carbon thin film selective growth region, for example,
CVD (chemical vapor deposition) including electrolytic plating, electroless plating, and MOCVD, with the area other than the area of the cathode electrode where the carbon thin film selective growth area is to be formed covered with an appropriate material. , Physical vapor deposition (PVD,
Publicly known methods such as Physical Vapor Deposition method). In addition, (a)
Electron beam heating method, resistance heating method, various vacuum evaporation methods such as flash evaporation, (b) plasma evaporation method, (c) bipolar sputtering method, DC sputtering method, DC magnetron sputtering method, high frequency sputtering method, magnetron sputtering method, Various sputtering methods such as ion beam sputtering method and bias sputtering method, (d) DC (direct current) method, RF method, multi-cathode method, activation reaction method, electric field deposition method, high-frequency ion plating method, reactive ion plating And various ion plating methods such as a plating method.

Here, the metal particles or metal thin films are made of molybdenum (Mo), nickel (Ni), titanium (T
i), chromium (Cr), cobalt (Co), tungsten (W), zirconium (Zr), tantalum (Ta),
Iron (Fe), copper (Cu), platinum (Pt) and zinc (Z
Preferably, it is composed of at least one metal selected from the group consisting of n).

Examples of the carbon thin film include a graphite thin film, an amorphous carbon thin film, a diamond-like carbon thin film, and a fullerene thin film. As a method of forming a carbon thin film, a microwave plasma method, a trans-coupled plasma method, an inductively-coupled plasma method, an electron cyclotron resonance plasma method, a CVD method based on an RF plasma method, etc., and a CVD method using a parallel plate type CVD apparatus are used. Examples can be given. The form of the carbon thin film includes not only a thin film but also carbon whiskers and carbon nanotubes (including hollow and solid).

The structure of the cathode electrode may be a single layer structure of a conductive material layer, a lower conductive material layer, a resistor layer formed on the lower conductive material layer, and a resistor layer formed on the resistor layer. It is also possible to have a three-layer structure of the upper conductive material layer formed. In the latter case, a carbon thin film selective growth region is formed on the surface of the upper conductive material layer. Thus, by providing the resistor layer, the electron emission characteristics of the electron emission electrode can be made uniform.

Hereinafter, an example of a method for manufacturing a flat field emission device will be described with reference to FIGS. 22 and 23 which are schematic partial end views of a support and the like.

[Step-500] First, a conductive material layer for a cathode electrode is formed on a support 11 made of, for example, a glass substrate, and then the conductive material layer for a cathode electrode is patterned by a known lithography technique and RIE method. Thus, the striped cathode electrode 12 is formed on the support 11. Striped cathode electrode 12
Extend in the left-right direction of the drawing. Cathode electrode 1
2 is a chromium (Cr) layer having a thickness of about 0.2 μm formed by, for example, a sputtering method.

[Step-510] Thereafter, the insulating layer 1 is formed on the entire surface, specifically, on the support 11 and the cathode 12.
Form 3

[Step-520] Next, after forming a gate electrode 14 in the form of a stripe on the insulating layer 13, an opening 15 is formed in the gate electrode 14 and the insulating layer 13.
The cathode electrode 12 is exposed at the bottom of the substrate 5 (see FIG. 22A). The striped gate electrode 14 extends in the direction perpendicular to the plane of the drawing. The planar shape of the opening 15 is
For example, it is a circle having a diameter of 1 μm to 30 μm. Opening 15
Is, for example, one to 30 in an area (overlap area) for one pixel.
About 00 pieces may be formed.

[Step-530] Next, the electron emission electrode 16D is placed on the cathode electrode 12 exposed at the bottom of the opening 15.
To form Specifically, first, a carbon thin film selective growth region 83 is formed on the surface of the cathode electrode 12 located at the bottom of the opening 15. For this purpose, first, a mask layer 84 in which the surface of the cathode electrode 12 is exposed is formed at the center of the bottom of the opening 15 (see FIG. 22B). In particular,
The opening 15 is formed by spin coating the resist material layer.
After the film is formed on the entire surface including the inside, the mask layer 84 can be obtained by forming a hole in the resist material layer located at the center of the bottom of the opening 15 based on the lithography technique. The mask layer 84 includes a portion of the cathode electrode 12 located at the bottom of the opening 15, a side wall of the opening 15,
The gate electrode 14 and the insulating layer 13 are covered. As a result, in the next step, a carbon thin film selective growth region is formed on the surface of the cathode electrode 12 located at the center of the bottom of the opening 15, but the cathode electrode 12 and the gate electrode 14 are short-circuited by metal particles. Can be reliably prevented.

Next, metal particles are adhered on the mask layer 84 including the exposed surface of the cathode electrode 12. Specifically, a solution in which nickel (Ni) fine particles are dispersed in a polysiloxane solution (using isopropyl alcohol as a solvent) is applied to the entire surface by spin coating to form a cathode thin film selective growth region 83 to be formed. Electrode 12
A layer composed of a solvent and metal particles is formed on the surface of the portion.
Thereafter, the mask layer 84 is removed, the solvent is removed by heating to about 400 ° C., and the metal particles 85 are left on the exposed surface of the cathode electrode 12, so that the carbon thin film selective growth region 83 can be obtained. (See FIG. 23A). The polysiloxane is exposed on the exposed cathode electrode 1.
2 has a function of fixing the metal particles 85 to the surface (so-called adhesive function).

[Step-540] Thereafter, a carbon thin film 86 having a thickness of about 0.2 μm is formed on the carbon thin film selective growth region 83 to obtain the electron emission electrode 16D. This state is shown in FIG. Table 2 below shows conditions for forming the carbon thin film 86 based on the microwave plasma CVD method.

[Table 2] [Film formation conditions for carbon thin film] Gas used: CH ₄ / H ₂ = 100/10 SCCM Pressure: 1.3 × 10 ³ Pa Microwave power: 500 W (13.56 MHz) Film formation temperature: 500 ゜ C

[Flat-Type Field Emission Element (Part 1)] FIG. 24C is a schematic partial cross-sectional view of a field-emission element having a second structure composed of a flat-type field emission element. This flat type field emission device includes a support 1 made of, for example, glass.
, A stripe-shaped cathode electrode formed on the support electrode, a support, and an insulating layer formed on the cathode electrode
3. A stripe-shaped gate electrode 14 formed on the insulating layer 13, and an opening 15 penetrating the gate electrode 14 and the insulating layer 13 and exposing the cathode electrode 12 at the bottom. The cathode electrode 12 extends in the direction perpendicular to the plane of FIG. 24C, and the gate electrode 14 extends in the horizontal direction of the plane of FIG. 24C. The cathode electrode 12 and the gate electrode 14 are made of chromium (Cr), and the insulating layer 13 is made of SiO.
Consists of _two . Here, the portion of the cathode electrode 12 exposed at the bottom of the opening 15 corresponds to the electron emitting portion 16.

Hereinafter, a method of manufacturing a flat field emission device will be described with reference to FIG. 24 which is a schematic partial cross-sectional view of a support and the like.

[Step-600] First, the cathode electrode 12 functioning as the electron emitting portion 16 is formed on the support 11. Specifically, after a cathode electrode conductive material layer made of chromium (Cr) is formed on the support 11 by a sputtering method, the cathode electrode conductive material layer is patterned based on a lithography technique and a dry etching technique. Thereby, a striped cathode electrode 12 can be formed on the support 11 (FIG. 24A).
reference). The cathode electrode 12 extends in the direction perpendicular to the plane of FIG.

[Step-610] Next, an insulating layer 13 made of SiO ₂ is formed on the support 11 and the cathode electrode 12 by, for example, a CVD method. In addition, the insulating layer 13 can also be formed from a glass paste based on a screen printing method.

[Step-620] Thereafter, a gate electrode 14 in the form of a stripe is formed on the insulating layer 13. Specifically, first, a conductive material layer made of chromium is formed on the entire surface by a sputtering method, and then the conductive material layer is patterned based on a lithography technique and a dry etching technique. Thus, the stripe-shaped gate electrode 14 can be formed (see FIG. 24B). The gate electrode 14 extends in the left-right direction on the paper of FIG. For example, the gate electrode 14 in a stripe shape can be directly formed on the insulating layer 13 by a screen printing method.

[Step-630] Next, an opening 15 is formed in the gate electrode 14 and the insulating layer 13, and the cathode electrode 12 functioning as the electron-emitting portion 16 is exposed at the bottom of the opening 15 ((FIG. 24) C)).

[Flat field emission device (No. 2)] FIG.
24A is different from the flat field emission device shown in FIG. 24C in that the cathode electrode exposed at the bottom of the opening 15 is different from the flat field emission device shown in FIG. 1
The second embodiment is characterized in that minute irregularities 12A are formed on the surface (corresponding to the electron-emitting portion 16). Such a flat field emission device can be manufactured by the following manufacturing method.

[Step-700] First, [Step-600]
To [Step-620], a striped cathode electrode 12 is formed on the support 11, an insulating layer 13 is formed on the entire surface, and a striped gate electrode 14 is formed on the insulating layer 13. I do. That is, a tungsten layer having a thickness of about 0.2 μm is formed on a support 11 made of, for example, a glass substrate by a sputtering method, and the tungsten layer is patterned in a stripe shape according to an ordinary procedure to form a cathode electrode 12. I do. Next, the insulating layer 13 is formed on the support 11 and the cathode electrode 12. The insulating layer 13 can be formed by a CVD method using TEOS (tetraethoxysilane) as a source gas. Further, a conductive material layer made of, for example, chromium having a thickness of about 0.2 μm is formed on the insulating layer 13 and patterned in a stripe shape to form the gate electrode 14. The state in which the process up to this point has been completed is substantially the same as that shown in FIG.

[Step-710] [Step-630]
Similarly, the opening 15 is formed in the gate electrode 14 and the insulating layer 13, and the cathode electrode 12 is exposed at the bottom of the opening 15. Thereafter, a minute uneven portion 12A is formed on the portion of the cathode electrode 12 exposed at the bottom of the opening 15.
In forming the minute irregularities 12A, SF ₆ is used as an etching gas, and etching conditions are set such that the grain boundary and the etching rate are faster than the etching rate of the tungsten crystal grains constituting the cathode electrode 12. Dry etching based on the RIE method is performed. as a result,
The minute uneven portion 12A having a size substantially reflecting the crystal grain size of tungsten can be formed.

In such a structure of the flat field emission device, a large electric field is applied from the gate electrode 14 to the minute uneven portion 12A of the cathode electrode 12, more specifically, the convex portion of the minute uneven portion 12A. At this time, since the electric field concentrated on the convex portion is larger than when the surface of the cathode electrode 12 is smooth, electrons are efficiently emitted from the convex portion by the quantum tunnel effect. Therefore, an improvement in luminance when incorporated in a display device can be expected as compared with a flat field emission device in which the smooth cathode electrode 12 is simply exposed at the bottom of the opening 15. Therefore, according to the flat field emission device shown in FIG. 25A, a sufficient emission electron current density can be obtained even if the potential difference between the gate electrode 14 and the cathode electrode 12 is relatively small. As a result, high luminance of the display device is achieved. Alternatively, the gate voltage required to achieve the same luminance may be low, so that low power consumption can be achieved.

The opening 15 was formed by etching the insulating layer 13, and then the fine irregularities 12 A were formed in the cathode electrode 12 based on the anisotropic etching technique. It is also possible to form the minute uneven portions 12A simultaneously by etching. That is, when the insulating layer 13 is etched, anisotropic etching conditions under which a certain degree of ion sputtering action can be expected are employed, and the etching is continued even after the opening 15 having the vertical wall is formed. The minute uneven portion 12 is formed on the portion of the cathode electrode 12 exposed at the bottom of the portion 15.
A can be formed. After that, isotropic etching of the insulating layer 13 may be performed.

In the same step as [Step-600], after forming a cathode conductive material layer made of tungsten on the support 11 by a sputtering method,
After patterning the conductive material layer for a cathode electrode based on a lithography technique and a dry etching technique, and then forming minute uneven portions 12A on the surface of the conductive material layer for a cathode electrode, [Step-610] to [Step-630] By performing the same steps, a field emission device similar to that shown in FIG. 25A can be manufactured.

Alternatively, in the same step as [Step-600], a cathode conductive material layer made of tungsten is formed on the support 11 by a sputtering method, and then the cathode electrode conductive material layer is formed on the surface of the cathode electrode conductive material layer. Small irregularities 1
After forming 2A, and then patterning the cathode electrode conductive material layer based on the lithography technique and the dry etching technique, [Step-610] to [Step-630]
By performing the same steps as in (A) of FIG.
A field emission device similar to that shown in FIG.

FIG. 25B shows a modification of the field emission device shown in FIG. In the field emission device shown in FIG. 25B, the average height position of the tip portion of the minute uneven portion 12A is closer to the support 11 than the lower surface position of the insulating layer 13 (that is, it is lowered). Is). To form such a field emission device, the duration of dry etching in [Step-710] may be extended. According to such a configuration, the electric field intensity near the center of the opening 15 can be further increased.

FIG. 26 shows a flat-type field emission device in which a coating layer 12B is formed on the surface of the cathode electrode 12 corresponding to the electron emission portion 16 (more specifically, on at least the minute uneven portion 12A). .

The coating layer 12B is preferably made of a material having a work function Φ smaller than that of the material forming the cathode electrode 12, and which material is selected depends on the work It may be determined based on the function, the potential difference between the gate electrode 14 and the cathode electrode 12, the required magnitude of the emitted electron current density, and the like.
As a constituent material of the coating layer 12B, amorphous diamond can be exemplified. When the coating layer 12B is formed using amorphous diamond, 5 × 10
An emission electron current density required for a display device can be obtained at an electric field strength of ⁷ V / m or less.

[0200] The thickness of the coating layer 12B is
Should be selected to reflect the This is because the concave portion of the minute uneven portion 12A is buried by the coating layer 12B, and the surface of the electron emission portion is smoothed.
This is because the meaning of providing is lost. Therefore, depending on the size of the minute uneven portion 12A, for example, when the minute uneven portion 12A is formed to reflect the crystal grain size of the electron-emitting portion, the thickness of the coating layer 12B is approximately 30 to 100 nm. Is preferably selected. When the average height position of the tip portion of the minute uneven portion 12A is lower than the lower surface position of the insulating layer, strictly speaking, the average height position of the tip portion of the coating layer 12B is lower than the lower surface position of the insulating layer. Lowering is more preferable.

Specifically, after [Step-710], a coating layer 12B made of amorphous diamond may be formed on the entire surface by, eg, CVD. The coating layer 12B
Is also deposited on an etching mask (not shown) formed on the gate electrode 14 and the insulating layer 13, but this deposited portion is removed at the same time when the etching mask is removed. As a raw material gas, for example, a CH ₄ / H ₂ mixed gas,
The coating layer 12B can be formed based on a CVD method using a CO / H ₂ mixed gas, and the coating layer 12B made of amorphous diamond is formed by thermal decomposition of a compound containing carbon.

Alternatively, in the same step as in [Step-600], a cathode conductive material layer made of tungsten is formed on the support 11 by a sputtering method, and then the cathode is formed based on a lithography technique and a dry etching technique. The conductive material layer for the electrode is patterned, and then the fine irregularities 12 are formed on the surface of the conductive material layer for the cathode electrode.
After forming A and then forming the coating layer 12B, the same steps as [Step-610] to [Step-630] are performed, whereby the field emission device shown in FIG. 26 can also be manufactured.

Alternatively, in the same step as [Step-600], a cathode conductive material layer made of tungsten is formed on the support 11 by a sputtering method, and then the surface of the cathode electrode conductive material layer is formed. Small irregularities 1
After forming 2A and then forming the coating layer 12B, after patterning the coating layer 12B and the conductive material layer for the cathode electrode based on the lithography technique and the dry etching technique, [Step-610] to [Step-630] By performing similar steps, the field emission device shown in FIG. 26 can be manufactured.

Alternatively, as a material constituting the coating layer, a material may be appropriately selected such that the secondary electron gain δ of such a material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. it can.

Incidentally, a coating layer may be formed on the electron-emitting portion 16 (the surface of the cathode electrode 12) of the flat field emission device shown in FIG. In this case, [Step-63
0], the cathode electrode 1 exposed at the bottom of the opening 15
2, a coating layer 12B may be formed on the surface of the substrate 2, or in [Step-600], for example, after forming a cathode electrode conductive material layer on the support 11, cover the cathode electrode conductive material layer. After forming the layer 12B, these layers may be patterned based on the lithography technique and the dry etching technique.

[Crater type field emission device (No. 1)] FIG. 30 is a schematic partial sectional view of the crater type field emission device.
(B) of FIG. In a crater type field emission device,
A plurality of raised portions 112A for emitting electrons, and a plurality of raised portions 11A;
Cathode electrode 1 having a recess 112B surrounded by 2A
12 is provided on the support 11. The insulating layer 1
FIG. 29B is a schematic perspective view in which the gate electrode 3 and the gate electrode 14 are removed.

The shape of the concave portion is not particularly limited, but typically forms a substantially spherical surface. This is because a sphere is used in the method for manufacturing the crater type field emission device, and the concave portion 112B is used.
Is formed to reflect a part of the shape of the sphere. Therefore, when the concave portion 112B forms a substantially spherical surface, the raised portion 112A surrounding the concave portion 112B has an annular shape. In this case, the concave portion 112B and the raised portion 112A have a shape like a crater or a caldera as a whole. Since the raised portion 112A is a portion that emits electrons, it is particularly preferable that the tip portion 112C is sharp from the viewpoint of increasing the electron emission efficiency. Tip 11 of raised portion 112A
Even if the profile of 2C has irregular irregularities,
Alternatively, it may be smooth. The arrangement of the protrusions 112A in one pixel may be regular or random. The concave portion 112B may be surrounded by a raised portion 112A that is continuous along the circumferential direction of the concave portion 112B, or may be surrounded by a discontinuous raised portion 112A along the circumferential direction of the concave portion 112B in some cases. You may.

In such a method of manufacturing a crater-type field emission device, the step of forming a striped cathode electrode on a support is more specifically performed by supporting the striped cathode electrode covering a plurality of spheres. Forming on the body and removing the sphere to remove a portion of the cathode electrode covering the sphere, thereby forming a plurality of ridges for emitting electrons, and being surrounded by each ridge, Forming a cathode electrode having a concave portion reflecting a part of the shape.

It is preferable to remove the sphere by a change in state and / or chemical change of the sphere. Here, the state change and / or chemical change of the sphere means a change such as expansion, sublimation, foaming, gas generation, decomposition, combustion, and carbonization, or a combination thereof. For example, when the sphere is made of an organic material, it is more preferable to remove the sphere by burning it. The removal of the sphere and the removal of the portion of the cathode electrode that covers the sphere, or the removal of the sphere and the removal of the portion of the cathode electrode, the insulating layer, and the gate electrode that cover the sphere do not necessarily need to occur simultaneously. For example, if a part of the sphere remains after removing the part of the cathode electrode covering the sphere or the insulating layer or the gate electrode part in addition to the part, the remaining sphere may be removed later.

In particular, when the sphere is made of an organic material, when the sphere is burned, for example, carbon monoxide, carbon dioxide, and water vapor are generated, the pressure in the closed space near the sphere increases, and the cathode electrode near the sphere is Explodes when a certain pressure limit is exceeded. Due to the force of the rupture, the portion of the cathode electrode covering the sphere is scattered to form a raised portion and a concave portion, and the sphere is removed. Alternatively, for example, when the sphere is burned, the cathode electrode, the insulating layer, and the gate electrode explode when a certain breakdown voltage limit is exceeded, based on a similar mechanism. Due to the force of the burst, the portions of the cathode electrode, the insulating layer, and the gate electrode covering the sphere are scattered, an opening is formed at the same time as the protrusion and the recess, and the sphere is removed. That is, there is no opening in the insulating layer and the gate electrode before the sphere is removed, and the opening is formed with the removal of the sphere. At this time, since the initial process of burning the sphere proceeds in the closed space, a part of the sphere may be carbonized. It is preferable that the thickness of the portion of the cathode electrode covering the sphere be thin enough to be scattered by bursting. In addition, it is preferable that the thickness of the portion of the cathode electrode, the insulating layer, and the gate electrode covering the sphere be thin enough to be scattered by rupture. Particularly, regarding the insulating layer, the thickness of the portion not covering the sphere is preferable. Preferably, the height is approximately the same as the diameter of the sphere.

In [Crater-type field emission device (Part 3)] described below, the sphere can be removed by a change in state and / or chemical change of the sphere. Sometimes it is easier to do In [Crater-type field emission device (No. 4)] described later, the opening is already completed before the sphere is removed. However, when the size of the opening is larger than the diameter of the sphere, The sphere can be removed by external force. Here, the external force is a physical force such as a blowing pressure of air or an inert gas, a blowing pressure of a cleaning liquid, a magnetic attraction force, an electrostatic force, a centrifugal force, or the like. [Crater-type field emission device (Part 3)] or [Crater-type field emission device (Part 4)] is different from [Crater-type field emission device (Part 1)] in that a portion of the cathode electrode that covers the sphere is different. Or, in some cases, there is no need to further scatter the insulating layer or the gate electrode, so the cathode electrode,
There is an advantage that residues of the insulating layer or the gate electrode are hardly generated.

[Crater-type field emission device (No. 3)] or [Crater-type field emission device (No. 4)]
In the sphere used in the above, at least the surface is made of a material having a large interfacial tension as compared with the interfacial tension (surface tension) of the material constituting the cathode electrode, the insulating layer and the gate electrode depending on the constitution. Is preferred. Thereby, in [Crater type field emission device (No. 4)], the cathode electrode, the insulating layer and the gate electrode did not cover at least the top of the sphere, and the opening was formed in the insulating layer and the gate electrode from the beginning. The state is obtained. How large the diameter of the opening is, for example, the relationship between the thickness of the material constituting the cathode electrode, the insulating layer or the gate electrode and the diameter of the sphere, the method of forming the cathode electrode, the insulating layer or the gate electrode, the cathode It depends on the interfacial tension (surface tension) of the material constituting the electrode, the insulating layer and the gate electrode.

[Crater-type field emission device (No. 3)] or [Crater-type field emission device (No. 4)]
In the above, the sphere only has to have at least the surface satisfying the above-mentioned condition regarding interfacial tension. That is, the portion having an interfacial tension higher than the interfacial tension of each of the cathode electrode, the insulating layer, and the gate electrode may be only the surface of the sphere or the entire surface, or the surface of the sphere and / or The whole constituent material may be any of an inorganic material, an organic material, and a combination of an inorganic material and an organic material. In [Crater-type field emission device (No. 3)] or [Crater-type field emission device (No. 4)], the cathode electrode and the gate electrode are made of a normal metal-based material, and the insulating layer is a silicon oxide-based material such as glass. In the case of being composed of, a hydroxyl group derived from adsorbed moisture is present on the surface of the metal-based material, and a hydroxyl group derived from dangling bonds of Si—O bonds and adsorbed moisture is present on the surface of the insulating layer, and the It is usually high. Therefore, it is particularly effective to use a sphere having a hydrophobic surface treatment layer. As a constituent material of the hydrophobic surface treatment layer, a fluorine-based resin, for example, polytetrafluoroethylene can be used. When the sphere has a hydrophobic surface treatment layer, the inside of the hydrophobic surface treatment layer is referred to as a core material, and the core material is made of a polymer material other than glass, ceramics, and fluororesin. Any of these may be used.

The organic material constituting the sphere is not particularly limited, but a general-purpose polymer material is preferable. However, in the case of a polymer material having an extremely high degree of polymerization or an extremely high content of multiple bonds, the combustion temperature becomes too high, and the cathode electrode, the insulating layer, and the gate electrode may be adversely affected when the sphere is removed by combustion. There is. Therefore, it is preferable to select a polymer material that can be burned or carbonized at a temperature at which there is no risk of adversely affecting these materials. In particular, when the insulating layer is formed using a material that needs to be fired in a later step, such as a glass paste, a polymer material that can be burned or carbonized at the firing temperature of the glass paste from the viewpoint of reducing the number of steps as much as possible. It is preferable to select Typical firing temperature for glass paste is about 530 ° C
Therefore, the combustion temperature of such a polymer material is 350 to 500
It is preferable to be about ΔC. Representative polymer materials include styrene, urethane, acrylic, vinyl, divinylbenzene, melamine, formaldehyde, and polymethylene homopolymers and copolymers. Alternatively, a fixed-type sphere having an adhesive force may be used as the sphere in order to secure a reliable arrangement on the support. As the fixed type sphere, a sphere made of an acrylic resin can be exemplified.

Alternatively, for example, a heat-expandable microsphere encapsulated with a vinylidene chloride-acrylonitrile copolymer as an outer shell, isobutane as a foam material, and encapsulated can be used as a sphere. In the [crater-type field emission device (No. 1)], when the heat-expandable microspheres are heated using such heat-expandable microspheres, the polymer of the outer shell is softened, and the contained isobutane is gasified and expanded. As a result, a true spherical hollow body having a particle size of about four times as large as that before the expansion is formed. As a result, [Crater type field emission device (No. 1)]
In the first aspect, a raised portion that emits electrons and a concave portion that is surrounded by the raised portion and reflects a part of the shape of a sphere can be formed in the cathode electrode. Further, in addition to the concave portion and the raised portion, an opening penetrating the gate electrode and the insulating layer can be formed. In this specification, the expansion of the heat-expandable microsphere due to heating is also included in the concept of the removal of the sphere. Thereafter, the thermal expansion type microspheres may be removed using an appropriate solvent.

In [Crater-type field emission device (No. 1)], after arranging a plurality of spheres on a support, a cathode electrode covering the spheres may be formed. In this case, or alternatively, in [Crater-type field emission device (No. 3)] or [Crater-type field emission device (No. 4)] described below, as a method of arranging a plurality of spheres on a support, On a support. For example, in the field of manufacturing a liquid crystal display device, a technique of spraying spacers for maintaining a constant panel interval can be applied to the spraying of spheres. Specifically, a so-called spray gun that sprays a sphere from a nozzle with compressed gas can be used. When the sphere is ejected from the nozzle, the sphere may be dispersed in a volatile solvent. Alternatively, the spheres can be sprinkled using a device or method commonly used in the field of electrostatic powder coating. For example, using a corona discharge, a sphere negatively charged by an electrostatic powder spray gun can be sprayed toward a grounded support. The sphere used is
Since it is very small as described later, when it is sprayed on the support, it adheres to the surface of the support by, for example, electrostatic force, and does not easily fall off the support in the subsequent steps. After arranging a plurality of spheres on the support, if the spheres are pressurized, overlapping of the plurality of spheres on the support can be eliminated, and the spheres can be densely arranged in a single layer on the support. it can.

Alternatively, a composition layer composed of a composition obtained by dispersing a sphere and a cathode electrode material in a dispersion medium is formed on a support, as in [Crater-type field emission device (2)] described later. Thus, after disposing a plurality of spheres on the support and coating the spheres with the cathode electrode made of the cathode electrode material, the dispersion medium can be removed. The composition may be in the form of a slurry or a paste, and the composition and viscosity of the dispersion medium may be appropriately selected according to the desired properties. As a method for forming the composition layer on the support, a screen printing method is suitable. Typically, the cathode electrode material is preferably fine particles whose sedimentation speed in the dispersion medium is lower than that of a sphere. Examples of a material constituting such fine particles include carbon, barium, strontium, and iron. After removing the dispersion medium,
If necessary, the cathode electrode is fired. Examples of the method for forming the composition layer on the support include a spraying method, a dropping method, a spin coating method, and a screen printing method. It should be noted that the sphere is arranged and the sphere is covered with a cathode electrode made of a cathode electrode material. Depending on the method of forming the composition layer, it is necessary to pattern the cathode electrode.

Alternatively, in [Crater-type field emission device (No. 3)] or [Crater-type field emission device (No. 4)] described later, a composition comprising a composition in which a sphere is dispersed in a dispersion medium is used. After the material layer is formed on the support, and the plurality of spheres are arranged on the support, the dispersion medium can be removed. The composition may be in the form of a slurry or a paste, and the composition and viscosity of the dispersion medium may be appropriately selected according to the desired properties. Typically,
By using an organic solvent such as isopropyl alcohol as a dispersion medium, the dispersion medium can be removed by evaporation. Examples of the method for forming the composition layer on the support include a spraying method, a dropping method, a spin coating method, and a screen printing method.

By the way, the gate electrode and the cathode electrode extend in directions different from each other (for example, the angle formed by the projected image of the striped gate electrode and the projected image of the striped cathode electrode is 90 degrees). It is patterned in a stripe shape, and electrons are emitted from the ridges located in the overlap region. Therefore, the raised portion is functionally
It only has to exist in the overlapping area. However, even if the ridges and recesses exist in an area other than the overlapping area,
Such ridges and recesses remain covered with the insulating layer,
It does not perform any function of emitting electrons. Therefore, no problem occurs even if the sphere is arranged on the entire surface.

On the other hand, when removing the portions of the cathode electrode, the insulating layer and the gate electrode (gate electrode) covering the sphere, the arrangement position of each sphere and the formation position of the opening correspond one to one. Therefore, an opening is formed in a region other than the overlapping region. Hereinafter, an opening formed in a region other than the overlapping region is referred to as an “ineffective opening” and is distinguished from an original opening that contributes to electron emission. By the way, even if an invalid opening is formed in a region other than the overlapping region, the invalid opening does not function as a field emission device at all, and does not adversely affect the operation of the field emission device formed in the overlapping region.
This is because the gate electrode is not formed at the upper end of the invalid opening even if the protrusion and the concave portion are exposed at the bottom of the invalid opening, or the gate electrode is formed at the upper end of the invalid opening. Even if it is formed, the raised portion and the concave portion are not exposed at the bottom, or the raised portion and the concave portion are not exposed at the bottom of the invalid opening, and the gate electrode is not formed at the upper end. This is simply because the surface of the support is exposed. Therefore, no problem occurs even if the sphere is arranged on the entire surface. The hole formed on the boundary between the overlapping area and the other area is included in the opening.

The diameter of the sphere is determined by the desired diameter of the opening, the diameter of the recess, the size of the display screen of the display device using the field emission element, the number of pixels, the size of the overlapping area, and the electric field to form one pixel. The selection can be made in accordance with the number of the emitting elements, but it is preferable to select in the range of 0.1 to 10 μm. For example, a sphere that is commercially available as a spacer for a liquid crystal display device has a favorable particle size distribution of 1 to 3%, and it is preferable to use this. Ideally, the shape of the sphere is a true sphere, but it need not be. In addition, depending on the method of manufacturing the field emission device, as described above, either the opening or the ineffective opening may be formed at the place where the sphere is arranged.
It is preferable to arrange at a density of about 0 to 5000 pieces / mm ² . For example, if spheres are arranged on the support at a density of about 1000 spheres / mm ² , for example, if the size of the overlapping area is 0.5 mm × 0.2 mm, about 100 spheres exist in this overlapping area. , About 100 ridges will be formed. If such a number of protrusions are formed in one overlapping region, the variation in the diameter of the concave portion due to the variation in the particle size distribution and the sphericity of the sphere is almost averaged, and in practice, one pixel ( (Or one sub-pixel), and the emission electron current density and luminance per pixel become substantially uniform.

[Crater-type field emission device (No. 1)] or [Crater-type field emission device (No. 2) described later)
~ [Crater type field emission device (No. 4)]
A part of the shape of the sphere is reflected in the shape of the concave portion forming the electron emitting portion. The profile of the tip portion of the raised portion may have irregular irregularities or may be smooth. In 2)], since this tip is formed by breaking the cathode electrode,
The tip of the raised portion is likely to have an irregular shape. If the tip is sharpened to the ridge due to the breakage, the tip can function as a highly efficient electron-emitting portion, which is advantageous. In [Crater type field emission device (No. 1)] to [Crater type field emission device (No. 4)], each of the raised portions surrounding the concave portion is substantially annular, and the concave portion and the raised portion in this case are formed as a whole. As a crater or caldera.

The arrangement of the ridges on the support may be regular or random, depending on the method of arranging the spheres. When the above-mentioned dry method or wet method is adopted,
The arrangement of the ridges on the support is random.

[Crater type field emission device (No. 1)]
In [Crater type field emission device (No. 4)], when an opening is formed in the insulating layer after the formation of the insulating layer, protection is performed after obtaining the raised portion so that the tip of the raised portion is not damaged. A structure in which a protective layer is removed after forming a layer and forming an opening can also be employed. Chromium can be exemplified as a material forming the protective layer.

Hereinafter, a method of manufacturing the field emission device of [Crater type field emission device (No. 1)] will be described with reference to FIGS. 27 to 30. FIGS. ),
FIG. 29A is a schematic partial end view, FIG. 30A and FIG. 30B are schematic partial cross-sectional views, and FIG.
(B), (B) of FIG. 28 and (B) of FIG.
30 is a partial perspective view schematically showing a wider range than (A) of FIG. 7, (A) of FIG. 28, and (A) of FIG.

[Step-800] First, the cathode electrode 112 covering the plurality of spheres 87 is formed on the support 11. Specifically, first, the sphere 87 is arranged on the entire surface of the support 11 made of, for example, a glass substrate. The sphere 87 is
For example, it is made of a polymethylene-based polymer material, has an average diameter of about 5 μm, and has a particle size distribution of less than 1%. Approximately 1000 spheres 87 were placed on the support 11 using a spray gun.
Place randomly at a density of mm ² . Spraying using a spray gun may be carried out by a method in which spheres are mixed with a volatile solvent and sprayed, or a method in which the spheres are sprayed from a nozzle in a powder state. The placed sphere 87 is held on the support 11 by electrostatic force. This state is shown in FIGS. 27A and 27B.

[Step-810] Next, the cathode electrode 112 is formed on the sphere 87 and the support 11. FIGS. 28A and 28B show a state in which the cathode electrode 112 is formed.
Shown in The cathode electrode 112 can be formed, for example, by screen-printing a carbon paste in a stripe shape. At this time, the sphere 87 is
Since they are arranged on the entire upper surface, some of the spheres 87 are not covered with the cathode electrode 112 as shown in FIG. 28B. Next, the cathode electrode 11
The cathode electrode 112 is dried at, for example, 150 ° C. in order to remove moisture and a solvent contained in 2 and flatten the cathode electrode 112. At this temperature, the sphere 87 does not undergo any state change and / or chemical change. Instead of the screen printing using a carbon paste as described above, a conductive material layer for the cathode electrode constituting the cathode electrode 112 is formed on the entire surface, and the conductive material layer for the cathode electrode is formed by ordinary lithography and dry etching. The stripe-shaped cathode electrode 112 can also be formed by patterning using a technique. When a lithography technique is applied, a resist layer is usually formed by a spin coating method.
If the number of rotations is about 500 rpm and the rotation time is about several seconds, the sphere 87 can be held on the support 11 without falling off or displacing.

[Step-820] Next, by removing the sphere 87, the cathode electrode 11 covered with the sphere 87 is removed.
2 is removed, a plurality of raised portions 112A for emitting electrons, and the sphere 8 surrounded by each raised portion 112A.
A cathode electrode 112 having a concave portion 112B that reflects a part of the shape of the cathode 7 is formed. This state is shown in FIGS. 29 (A) and (B). Specifically, the cathode electrode 1
The sphere 87 is burned by heating at about 530 ° C., also serving as firing of No. 12. As the sphere 87 burns, the pressure in the enclosed space in which the sphere 87 is trapped increases,
When the portion of the cathode electrode 112 covering the sphere 87 exceeds a certain withstand pressure limit, it is ruptured and removed. as a result,
A raised portion 112A and a concave portion 112B are formed in a part of the cathode electrode 112 formed on the support 11.
When a part of the sphere remains as a residue after the sphere is removed, it depends on the material constituting the sphere to be used.
The residue may be removed using an appropriate cleaning solution.

[Step-830] Then, the cathode electrode 1
An insulating layer 13 is formed on the support 12 and the support 11. Specifically, for example, a glass paste is screen-printed on the entire surface to a thickness of about 5 μm. Next, the insulating layer 13 is dried at, for example, 150 ° C. in order to remove moisture and a solvent contained in the insulating layer 13 and to flatten the insulating layer 13. Instead of screen printing using a glass paste as described above, an SiO ₂ film may be formed by, for example, a plasma CVD method.

[Step-840] Next, on the insulating layer 13,
A stripe-shaped gate electrode 14 is formed (see FIG. 30A). The gate electrode 14 can be formed, for example, by screen-printing a carbon paste in a stripe shape. The direction in which the projected image of the striped gate electrode 14 extends at this time forms an angle of 90 degrees with the direction in which the projected image of the striped cathode electrode 112 extends. Next, the gate electrode 14 and the insulating layer 13 are removed after drying the gate electrode 14 at, for example, 150 ° C. in order to remove moisture and a solvent contained in the gate electrode 14 and planarize the gate electrode 14. The constituent material is fired. Instead of screen printing using carbon paste, a gate electrode constituting the gate electrode 14 is formed on the entire surface of the insulating layer 13, and then the gate electrode is patterned by using a normal lithography technique and a dry etching technique. Is also good.

[Step-850] After that, the gate electrode 14
Is formed in the gate electrode 14 and the insulating layer 13 in an overlapping region where the projected image of the cathode electrode 112 and the projected image of the cathode electrode 112 overlap with each other. The recess 112B is exposed. The opening 15 can be formed by forming a resist mask by a usual lithography technique and by etching using the resist mask. However, it is preferable to perform etching under a condition that a sufficiently high etching selectivity with respect to the cathode electrode 112 can be secured. Alternatively, it is preferable that a protective layer made of, for example, chromium is formed after forming the protruding portion 112A, and the protective layer is removed after the opening 15 is formed. After that, the resist mask is removed. Thus, the field emission device shown in FIG. 30B can be obtained.

As a modification of the method for manufacturing [Crater type field emission device (No. 1)], after [Step-810], [Step-830] to [Step-850] are executed, and then [ Step-820] may be performed. in this case,
The burning of the sphere and the firing of the material forming the gate electrode 14 and the insulating layer 13 may be performed simultaneously.

Alternatively, after [Step-810], [Step-830] is performed, and in the same step as [Step-840], the striped gate electrode having no opening is insulated. After forming on the layer, [Step-820]
Execute As a result, the portions of the cathode electrode 112, the insulating layer 13, and the gate electrode 14 that cover the sphere 87 are removed, thereby forming an opening penetrating the gate electrode 14 and the insulating layer 13 and emitting electrons. 112A, and the sphere 8 surrounded by the protrusion 112A
And a concave portion 112B reflecting a part of the shape of the cathode electrode 7 in the cathode electrode 112 located at the bottom of the opening.
Can be formed. That is, the pressure in the closed space in which the sphere 87 is confined increases with the burning of the sphere 87, and the cathode electrode 112, the insulating layer 13, and the gate electrode 14 in the portion covering the sphere exceed a certain withstand voltage limit. At this point, it ruptures, an opening is formed at the same time as the protrusion 112A and the recess 112B, and the sphere 87 is removed. The opening penetrates the gate electrode 14 and the insulating layer 13 and reflects a part of the shape of the sphere 87. At the bottom of the opening, a raised portion 112A that emits electrons and a concave portion 112B that is surrounded by the raised portion 112A and reflects a part of the shape of the sphere 87 remain.

[Crater type field emission device (No. 2)] Next, a method of manufacturing [Crater type field emission device (No. 2)] will be described with reference to FIG. The step of arranging 87 forms a composition layer 88 made of a composition obtained by dispersing the sphere 87 and the cathode electrode material in a dispersion medium on the support 11. The crater-type field emission device (No. 1) has a step of disposing a sphere 87 and covering the sphere with the cathode electrode 112 made of a cathode electrode material, and then removing the dispersion medium, that is, a wet method. Is different from the manufacturing method.

[Step-900] First, a plurality of spheres 87 are arranged on the support 11. Specifically, a composition layer 88 made of a composition in which the sphere 87 and the cathode electrode material 88B are dispersed in a dispersion medium 88A is formed on the support 11. That is, for example, isopropyl alcohol is added to the dispersion medium 8.
8A, a sphere 87 made of a polymethylene polymer material having an average diameter of about 5 μm;
A composition formed by dispersing carbon particles of μm as a cathode electrode material 88B in a dispersion medium 88A is screen-printed in stripes on the support 11 to form a composition layer 88. FIG. 31A shows a state immediately after the formation of the composition layer 88.

[Step-910] In the composition layer 88 held by the support 11, the sphere 87 is soon settled down and placed on the support 11, and the sphere 87 is separated from the support 11 by the support.
The cathode electrode material 88B is settled thereon, and the cathode electrode 112 made of the cathode electrode material 88B is formed. Thus, the plurality of spheres 87 can be arranged on the support 11 and the spheres 87 can be covered with the cathode electrode 112 made of the cathode electrode material. This state is shown in FIG.
(B) of FIG.

[Step-920] Thereafter, the dispersion medium 88A is removed, for example, by evaporation. This state,
This is shown in FIG.

[Step-930] [Step-820] to [Step-930] of [Crater type field emission device (1)]
850] or a modification of the method for manufacturing [Crater type field emission device (1)] to complete a field emission device similar to that shown in FIG. Can be.

[Crater-Type Field Emission Device (Part 3)] Next, a method for manufacturing [Crater-type field emission device (Part 3)] will be described. The step of forming a striped cathode electrode on a support is as follows. More specifically, a step of arranging a plurality of spheres on a support, a plurality of ridges emitting electrons, and a recess surrounded by each ridge and reflecting a part of the shape of the sphere. And a step of providing, on a support, a cathode electrode in which each protrusion is formed around a sphere, and a step of removing the sphere. The arrangement of the plurality of spheres on the support is performed by scattering the spheres. The sphere has a hydrophobic surface treatment layer. Hereinafter, [Crater type field emission device (No. 3)] will be described with reference to FIG.

[Step-1000] First, a plurality of spheres 187 are arranged on the support 11. Specifically, a plurality of spheres 187 are arranged on the entire surface of the support 11 made of a glass substrate. The sphere 187 is formed by coating a core material 187A made of, for example, a divinylbenzene polymer material with a surface treatment layer 187B made of a polytetrafluoroethylene resin, and has an average diameter of about 5 μm and a particle size distribution of less than 1%. .
The spheres 187 are randomly arranged on the support 11 at a density of about 1000 / mm ² using a spray gun. The arranged sphere 187 is adsorbed on the support 11 by electrostatic force. FIG. 32A shows a state in which the processes up to this point have been completed.

[Step-1010] Next, a plurality of raised portions 112A for emitting electrons, and each of the raised portions 112A are surrounded by the raised portions 112A.
And a concave portion 112B reflecting a part of the shape of the sphere 187
The cathode electrode 112 having the raised portions 112A formed around the spherical body 187 is provided on the support 11.
Specifically, in the same manner as described in [Crater-type field emission device (Part 1)], for example, carbon paste is screen-printed in a stripe shape. The surface is the surface treatment layer 18
7B, the carbon paste screen-printed on the sphere 187 is immediately flipped and dropped, and is deposited around the sphere 187 to form the raised portion 112B.
A is formed. The tip 112C of the raised portion 112A is
It is not as sharp as in the case of [Crater type field emission device (1)]. The portion of the cathode electrode 112 that enters between the sphere 187 and the support 11 serves as a recess 112B. In FIG. 32B, the cathode electrode 112 and the sphere 1
Although it is illustrated so that there is a gap between it and 87,
The cathode electrode 112 and the sphere 187 may be in contact with each other. Thereafter, the cathode electrode 112 is dried at, for example, 150 ° C. FIG. 32B shows a state in which the processes up to this point have been completed.

[Step-1020] Next, by applying an external force to the sphere 187, the sphere 187
Is removed. As a specific removing method, cleaning and blowing of compressed gas can be mentioned. FIG. 32C shows a state in which the processes up to this point have been completed. The removal of the sphere can be based on the state change and / or the chemical change of the sphere, and more specifically, for example, the sphere can be removed by combustion. The same applies to [Crater type field emission device (No. 4)] described below.

[Step-1030] Thereafter, [Step-830] to [Step-850] of [Crater type field emission device (1)] are executed, thereby obtaining substantially the same as shown in FIG. Can be obtained.

As a modification of the method for manufacturing [Crater type field emission device (No. 3)], [Step-1010]
Thereafter, [Step-830] to [Step-850] of [Crater type field emission device (1)] may be executed, and then [Step-1020] may be executed.

[Crater-type field emission device (No. 4)] Next, a method of manufacturing [Crater-type field emission device (No. 4)] will be described.
More specifically, the step of forming a striped cathode electrode on the support includes a step of arranging a plurality of spheres on the support, a plurality of ridges for emitting electrons, and each ridge. And a concave portion reflecting a part of the shape of the sphere, and each protuberance is provided on the support with a cathode electrode formed around the sphere. In addition, when providing the insulating layer on the entire surface, the insulating layer having an opening formed above the sphere,
Provided on the cathode electrode and the support. The removal of the sphere is performed after the formation of the opening. In the method for manufacturing the field emission device of [Crater type field emission device (No. 4)], the plurality of spheres are arranged on the support by scattering the spheres. The sphere has a hydrophobic surface treatment layer. Hereinafter, [Crater type field emission device (No. 4)] will be described with reference to FIGS.
This will be described with reference to FIG.

[Step-1100] First, a plurality of spheres 187 are arranged on the support 11. Specifically, the same step as [Step-1000] of [Crater type field emission device (No. 3)] is executed.

[Step-1110] Thereafter, the plurality of raised portions 112A for emitting electrons and the concave portion 11 which is surrounded by each raised portion 112A and reflects a part of the shape of the spherical body 187.
2B, and the cathode electrode 112 in which each raised portion 112 </ b> A is formed around the sphere 187 is provided on the support 11. Specifically, the same step as [Step-1010] of [Crater type field emission device (No. 3)] is performed.

[Step-1120] Next, an insulating layer 113 having an opening 15A formed above the sphere is provided on the cathode electrode 112 and the support 11. Specifically, for example, a glass paste is screen-printed on the entire surface to a thickness of about 5 μm. Screen printing using a glass paste can be performed in the same manner as in [Crater-type field emission device (No. 1)], except that the surface of the spherical body 187 has the surface treatment layer 18.
7B, the glass paste screen-printed on the sphere 187 is immediately flipped and dropped, and the sphere 1 of the insulating layer 113 is dropped by its own surface tension.
The upper part of 87 contracts. As a result, the top of the sphere 187 is exposed in the opening 15A without being covered by the insulating layer 113. This state is shown in FIG. In the illustrated example, the diameter of the upper end of the opening 15A is larger than the diameter of the sphere 187, but when the interfacial tension of the surface treatment layer 187B is smaller than the interfacial tension of the glass paste,
The diameter of the opening 15A tends to decrease. Conversely, when the interfacial tension of the surface treatment layer 187B is significantly higher than the interfacial tension of the glass paste, the diameter of the opening 15A tends to increase. Then, the insulating layer 113 is
Dry at 0 ° C.

[Step-1130] Next, a gate electrode 114 having an opening 15B communicating with the opening 15A is formed on the insulating layer 113. Specifically, for example, a carbon paste is screen-printed in a stripe shape. The screen printing using the carbon paste may be performed in the same manner as in [Crater type field emission device (No. 1)].
Because the surface of 87 is hydrophobic due to the surface treatment layer 187B, the carbon paste screen-printed on the sphere 187 is immediately repelled and contracts due to its own surface tension, and only on the surface of the insulating layer 113. It is in a state of attachment. At this time, the gate electrode 114 is
In some cases, the insulating layer 113 is formed so as to slightly extend from the opening end of the insulating layer 113 into the opening 15A. Thereafter, the gate electrode 114 is dried at, for example, 150 ° C. FIG. 33B shows a state in which the processes up to this point have been completed.
If the interfacial tension of the surface treatment layer 187B is smaller than the interfacial tension of the carbon paste, the diameter of the opening 15A tends to be smaller. Conversely, the surface treatment layer 187B
Is significantly larger than the interfacial tension of the carbon paste, the diameter of the opening 15A tends to increase.

[Step-1140] Next, the opening 15B,
The sphere 187 exposed at the bottom of the 15A is removed. Specifically, the sphere 187 is burned by heating at about 530 ° C., which is a typical firing temperature of a glass paste, also serving as firing of the cathode electrode 112, the insulating layer 113, and the gate electrode 114. At this time, unlike the [crater type field emission device (No. 1)], the openings 15A and 15B are formed in the insulating layer 113 and the gate electrode 114 from the beginning, so that the cathode electrode 112, the insulating layer 113, and the gate electrode Part of 114 does not scatter, and sphere 187
Is quickly removed. When the diameters of the upper ends of the openings 15A and 15B are larger than the diameter of the sphere 187, the sphere 187 can be removed without burning the sphere 187 by an external force such as washing or blowing compressed gas. It is possible. FIG. 3 shows a state in which the processes up to this point have been completed.
4 (A).

[Step-1150] Then, the opening 15A
When a part of the insulating layer 113 corresponding to the side wall surface is isotropically etched, the field emission device shown in FIG. 34B can be completed. Here, the end of the gate electrode 114 faces downward, which is preferable in order to increase the electric field intensity in the opening 15.

[Edge-type field emission device] FIG. 35A is a schematic partial sectional view of an edge-type field emission device.
The edge type field emission device includes a stripe-shaped cathode electrode 212 formed on the support 11, an insulating layer 13 formed on the support 11 and the cathode electrode 212, and a stripe formed on the insulating layer 13. Gate electrode 14
The opening 15 is provided in the gate electrode 14 and the insulating layer 13. An edge portion 212A of the cathode electrode 212 is exposed at the bottom of the opening 15.
By applying a voltage to the cathode electrode 212 and the gate electrode 14, an edge 212
A emits electrons.

As shown in FIG. 35B, the concave portion 1 is formed in the support 11 below the cathode electrode 212 in the opening 15.
1A may be formed. Alternatively, as shown in a schematic partial cross-sectional view of FIG. 35C, the first gate electrode 14A formed on the support 11 and the first gate electrode 14A The formed first insulating layer 13A, the cathode electrode 212 formed on the first insulating layer 13A, the first insulating layer 13A and the cathode electrode 2
12 and a second gate electrode 14B formed on the second insulating layer 13B. The opening 15 is formed by the second gate electrode 14B, the second insulating layer 13B, and the cathode electrode 21.
2 and the first insulating layer 13A.
The edge portion 212A of the cathode electrode 212 is exposed on the side wall 5. By applying a voltage to the cathode electrode 212, the first gate electrode 14A, and the second gate electrode 14B, the edge portion 212A of the cathode electrode 212
The electrons are emitted from.

For example, a method of manufacturing the edge type field emission device shown in FIG. 35C will be described below with reference to FIG. 36 which is a schematic partial end view of a support.

[Step-1200] First, a tungsten film having a thickness of about 0.2 μm is formed on a support 11 made of, for example, a glass substrate by a sputtering method. This tungsten film is patterned to form a first gate electrode 14A. Next, over the entire surface,
After forming a 0.3 μm thick first insulating layer 13A made of O _{2, a} striped cathode electrode 212 made of tungsten is formed on the first insulating layer 13A (see FIG. 36A). ).

[Step-1210] Thereafter, a second insulating layer 13 of, eg, SiO ₂ and having a thickness of 0.7 μm is formed on the entire surface.
B, and then a stripe-shaped second gate electrode 14B is formed over the second insulating layer 13B (see FIG. 36B). The constituent material and thickness of the second gate electrode 14B may be the same as or different from those of the first gate electrode 14A.

[Step-1220] Next, after forming a resist layer 89 on the entire surface, a resist opening 89A is formed on the resist layer 89 so as to partially expose the surface of the second gate electrode 14B. The planar shape of the resist opening 89A is rectangular. The long side of the rectangle is approximately 100 μm, and the short side is several μm to 10 μm. Subsequently, the resist opening 89
A of the second gate electrode 14B exposed on the bottom of
An opening is formed by anisotropic etching by the IE method. Next, the second insulating layer 13B exposed at the bottom of the opening is formed.
Is isotropically etched to form an opening (see FIG. 36C). Since the second insulating layer 13B is formed using SiO ₂ , wet etching using a buffered hydrofluoric acid aqueous solution is performed. The wall surface of the opening formed in the second insulating layer 13B recedes from the opening end surface of the opening formed in the second gate electrode 14B, and the amount of retreat at this time is controlled by the length of the etching time. be able to.
Here, wet etching is performed until the lower end of the opening formed in the second insulating layer 13B recedes from the opening end surface of the opening formed in the second gate electrode 14B.

Next, the cathode electrode 212 exposed on the bottom surface of the opening is dry-etched under the condition of using ions as a main etching species. In dry etching using ions as a main etching species, ions that are charged particles can be accelerated by applying a bias voltage to an object to be etched or by using an interaction between a plasma and a magnetic field. As the etching proceeds, the processed surface of the object to be etched becomes a vertical wall. However, in this process, the main etching species in the plasma have some incident components having an angle other than perpendicular, and the oblique incident components also occur due to scattering at the end of the opening, so that the cathode In the exposed surface of the electrode 212, even in a region where ions should not reach because it is originally shielded by the opening,
The main etching species enters with a certain probability. At this time, the incidence probability is higher for the main etching species having a smaller incident angle with respect to the normal line of the support 11, and the incidence probability is lower for the main etching species having a larger incidence angle.

Therefore, although the position of the upper end of the opening formed in the cathode electrode 212 is almost aligned with the lower end of the opening formed in the second insulating layer 13B, the position of the upper end is formed in the cathode electrode 212. The position of the lower end of the opening protrudes from the upper end. That is, the thickness of the edge portion 212A of the cathode electrode 212 becomes thinner toward the front end portion in the protruding direction, and the edge portion 212A is sharpened.
For example, by using SF ₆ as an etching gas, favorable processing of the cathode electrode 212 can be performed.

Next, the first insulating layer 13A exposed at the bottom of the opening formed in the cathode electrode 212 is isotropically etched to form an opening in the first insulating layer 13A. To complete. Here, wet etching using a buffered hydrofluoric acid aqueous solution is performed. First insulating layer 13
The wall surface of the opening formed in A is recessed from the lower end of the opening formed in cathode electrode 212. The amount of retreat at this time can be controlled by the length of the etching time.
When the resist layer 89 is removed after the opening 15 is completed, the structure shown in FIG. 35C can be obtained.

[Spindt Field Emission Device: Modification of Manufacturing Method-1] A modification of the method of manufacturing a Spindt field emission device described in [Spindt Field Emission Device] is described below. 37 to 3 which are schematic partial end views.
9, the Spindt-type field emission device (see FIG. 40) is basically manufactured based on the following steps. That is, (a) a step of forming the cathode electrode 12 on the support 11 (b) a step of forming the insulating layer 13 on the support 11 including the cathode electrode 12 (c) forming the gate electrode 14 on the insulating layer 13 Step of Forming (d) Opening 15 with Cathode Electrode 12 Exposed at Bottom
(E) a step of forming a conductive material layer 91 for forming an electron emission portion on the entire surface including the inside of the opening 15 (f) a conductive material layer located at the center of the opening 15 Forming a mask material layer 92 on the conductive material layer 91 so as to shield the region 91; (g) the etching rate of the conductive material layer 91 in the direction perpendicular to the support 11 Body 1
The conductive material layer 91 and the mask material layer 92 are etched under an anisotropic etching condition in which the etching rate is higher than the etching rate in the direction perpendicular to the first direction. For forming an electron emission electrode 16E having a shape on the cathode electrode 12 exposed in the opening 15

[Step-1300] First, a cathode electrode 1 made of chromium (Cr) is formed on a support 11 having a SiO ₂ layer having a thickness of about 0.6 μm formed on a glass substrate, for example.
2 is provided. Specifically, a cathode conductive material layer made of chromium is deposited on the support body 11 by, for example, a sputtering method or a CVD method, and the cathode material conductive material layer is patterned to form a plurality of cathode electrodes 12. Can be formed. Cathode electrode 12
Is 50 μm, for example, and the space between the cathode electrodes 12 is, for example, 30 μm. Thereafter, an insulating layer 13 made of SiO ₂ is formed on the entire surface, specifically, on the cathode electrode 12 and the support 11 by a plasma CVD method using TEOS (tetraethoxysilane) as a source gas. The thickness of the insulating layer 13 is about 1 μm. Next, a stripe-shaped gate electrode 14 extending in parallel to a direction orthogonal to the cathode electrode 12 is formed on the entire surface of the insulating layer 13.

Next, the overlapping region of the striped cathode electrode 12 and the striped gate electrode 14, that is, 1
An opening 15 penetrating through the gate electrode 14 and the insulating layer 13 is formed in the pixel region. The planar shape of the opening 15 is, for example, a circle having a diameter of 0.3 μm. Opening 15
Are generally formed in one pixel region (one overlapping region) in the order of hundreds to thousands. To form the opening 15, first, the opening 15 is formed in the gate electrode 14, and then, the opening 15 is formed in the insulating layer 13 using a resist layer formed by a normal photolithography technique as a mask. . RI
After the completion of E, the resist layer is removed by ashing (see FIG. 37A).

[Step-1310] Next, the adhesion layer 9 is formed on the entire surface.
0 is formed by a sputtering method (see FIG. 37B). The adhesion layer 90 is formed on the insulating layer 13 exposed on the region where the gate electrode is not formed or on the side wall surface of the opening 15.
And a conductive material layer 91 formed on the entire surface in the next step. Assuming that the conductive material layer 91 is formed of tungsten, the adhesion layer 90 made of tungsten is formed to a thickness of 0.07 μm by DC sputtering.

[Step-1320] Next, a conductive material layer 91 for forming an electron emission portion made of tungsten having a thickness of about 0.6 μm is formed on the entire surface including the inside of the opening 15 by hydrogen reduction pressure reduction CV.
It is formed by Method D (see FIG. 38A). On the surface of the conductive material layer 91 on which the film is formed, a concave portion 91A reflecting a step between the upper end surface and the bottom surface of the opening 15 is formed.

[Step-1330] Next, a mask material layer 92 is formed so as to shield the region of the conductive material layer 91 located at the center of the opening 15 (specifically, the concave portion 91A). Specifically, first, a thickness of 0.
A 35 μm resist layer is formed as a mask material layer 92 on the conductive material layer 91 (see FIG. 38B). The mask material layer 92 absorbs the concave portions 91A of the conductive material layer 91 and has a substantially flat surface. Next, the mask material layer 92 is etched by RIE using an oxygen-based gas. This etching is completed when the flat surface of the conductive material layer 91 is exposed. Thereby, the concave portions 91 of the conductive material layer 91 are formed.
The mask material layer 92 remains so that A is buried flat (see FIG. 39A).

[Step-1340] Next, the conductive material layer 91
Then, the mask material layer 92 and the adhesion layer 90 are etched to form a conical electron emission electrode 16E (see FIG. 39B). The etching of these layers is performed under anisotropic etching conditions in which the etching rate of the conductive material layer 91 is higher than the etching rate of the mask material layer 92. The etching conditions are illustrated in Table 3 below.

[Table 3] [Etching conditions for conductive material layer 91 etc.] SF ₆ flow rate: 150 SCCM O ₂ flow rate: 30 SCCM Ar flow rate: 90 SCCM Pressure: 35 Pa RF power: 0.7 kW (13.56 MHz)

[Step-1350] Thereafter, the side wall surface of the opening 15 provided in the insulating layer 13 inside the opening 15 is retreated under isotropic etching conditions.
Is completed. The isotropic etching can be performed by dry etching using radicals as a main etching species, such as chemical dry etching, or wet etching using an etchant. As an etching solution, for example, 49%
A 1: 100 (volume ratio) mixture of a hydrofluoric acid aqueous solution and pure water can be used.

Here, the mechanism for forming the electron emission electrode 16E in [Step-1340] will be described with reference to FIG. FIG. 41A is a schematic diagram showing how the surface profile of the object to be etched changes at regular time intervals with the progress of etching, and FIG. 5 is a graph showing a relationship between the center of an opening 15 and the thickness of an object to be etched. The thickness of the mask material layer at the center of the opening 15 is represented by h
_p, the height of the electron emission electrode 16E at the center of the opening 15, h _e.

Under the etching conditions shown in Table 3, the etching rate of the conductive material layer 91 is naturally higher than the etching rate of the mask material layer 92 made of the resist material.
In a region where the mask material layer 92 does not exist, the conductive material layer 9
1 immediately starts to be etched, and the surface of the object to be etched quickly descends. On the other hand, in the region where the mask material layer 92 exists, the etching of the conductive material layer 91 thereunder does not start unless the mask material layer 92 is first removed. rate of decrease in the thickness of the object to be etched is slow (h _p decreasing segment), the first time when the mask material layer 92 is lost,
Rate of decrease in the thickness of the object to be etched is similar to the nonexistent areas of the mask material layer 92 faster (h _e decreasing segment). h _e
The start time of the decreasing section is the latest at the center of the opening 15 where the thickness of the mask material layer 92 is maximum, and
Of the opening 15 having a small thickness. Thus, a conical electron emission electrode 16E is formed.

The ratio of the etching rate of the conductive material layer 91 to the etching rate of the mask material layer 92 made of the resist material is referred to as “resist selectivity”.
The fact that the selectivity to resist is an important factor in determining the height and shape of the electron-emitting electrode 16E will be described with reference to FIG. 42A shows the case where the resist selectivity is relatively small, and FIG. 42C shows the case where the resist selectivity is relatively large, and FIG. In this case, the shape of the electron emission electrode 16E is shown. The greater the selectivity to resist, the greater the mask material layer 9
Since the film thickness of the conductive material layer 91 becomes more severe than the film thickness of No. 2, the electron emission electrode 16E is found to be higher and sharper. The resist selectivity decreases as the ratio of O ₂ flow to SF ₆ flow increases. Also, when using an etching apparatus that can change the incident energy of ions by using a substrate bias, it is possible to increase the RF bias power or reduce the frequency of the AC power supply for bias application to select the resist. The ratio can be reduced. The value of the resist selectivity is selected to be 1.5 or more, preferably 2 or more, and more preferably 3 or more.

In the above-described etching, it is naturally necessary to secure a high selectivity with respect to the gate electrode 14 and the cathode electrode 12, but there is no problem at all under the conditions shown in Table 3. This is because the material forming the gate electrode 14 and the cathode electrode 12 is hardly etched by the fluorine-based etching species, and an etching selectivity of about 10 or more can be obtained under the above conditions.

[Spint Field Emission Device: Modification of Manufacturing Method-2] Modification of Manufacturing Method of Spindt Field Emission Device-2
Is a modification of Modification-1 of the manufacturing method of the Spindt-type field emission device. In Modification-2 of the manufacturing method, the region of the conductive material layer shielded by the mask material layer can be made narrower than in Modification-1 of Manufacturing Method. That is, in Modification-2 of the manufacturing method, reflecting a step between the upper end surface and the bottom surface of the opening, a substantially funnel-shaped concave portion including a columnar portion and an enlarged portion communicating with the upper end of the columnar portion is formed. After the mask material layer is formed on the entire surface of the conductive material layer in step (f), the mask material layer and the conductive material layer are formed in a plane parallel to the surface of the support. The removal leaves a mask material layer on the columnar portion.

Hereinafter, Modification-2 of the manufacturing method of the Spindt-type field emission device will be described with reference to FIGS. 43 to 45 which are schematic partial end views of a support and the like.

[Step-1400] First, the cathode electrode 12 is formed on the support 11. The conductive material layer for the cathode electrode including the cathode electrode 12 is made of, for example, a TiN layer (thickness 0.1 μm), a Ti layer (thickness 5 nm), an Al—Cu layer (thickness 0.4 μm), Layer (5 nm thick), TiN layer (0.02 μm thick) and T
An i-layer (0.02 μm) is laminated in this order to form a laminated film, and then the laminated film is formed by patterning in a stripe shape. In the drawing, the cathode electrode 12 is represented by a single layer. Next, an insulating layer 13 having a thickness of 0.7 μm is formed on the entire surface, specifically, on the support 11 and the cathode electrode 12 by TE
It is formed based on a plasma CVD method using OS (tetraethoxysilane) as a source gas. Next, a gate electrode 14 having a stripe shape is formed on the insulating layer 13.

Further, an etching stopper layer 93 made of, for example, SiO ₂ and having a thickness of 0.2 μm is formed on the entire surface. The etching stop layer 93 is not an indispensable member for the function of the field emission device, and serves to protect the gate electrode 14 when the conductive material layer 91 is etched in a later step. still,
The gate electrode 1 for the etching conditions of the conductive material layer 91
If 4 can have a sufficiently high etching resistance, the etching stop layer 93 may be omitted. Then, R
Etching stop layer 93, gate electrode 1 by IE method
4. An opening 15 penetrating the insulating layer 13 and exposing the cathode electrode 12 at the bottom is formed. Thus, FIG.
(A) is obtained.

[Step-1410] Next, an adhesion layer 90 made of tungsten, for example, having a thickness of 0.03 μm is formed on the entire surface including the inside of the opening 15 (see FIG. 43B).
Next, a conductive material layer 91 for forming an electron-emitting portion is formed on the entire surface including the inside of the opening 15. However, modification of manufacturing method-2
In the conductive material layer 91, the thickness of the conductive material layer 91 is selected such that a concave portion 91A deeper than the concave portion 91A described in the first modification of the manufacturing method is formed on the surface. That is, by appropriately setting the thickness of the conductive material layer 91, the stepped portion between the upper end surface and the bottom surface of the opening 15 is reflected, and the columnar portion 91B and the enlarged portion communicating with the upper end of the columnar portion 91B are reflected. 91
C can be formed on the surface of the conductive material layer 91.

[Step-1420] Next, the conductive material layer 91
Over the entire surface, for example, by electroless plating, a thickness of about 0.5
A mask material layer 92 of μm copper (Cu) is formed (see FIG. 44A). The electroless plating conditions are exemplified in Table 4 below.

[0280] [Table 4] Plating liquid: copper sulfate _{(CuSO 4 · 5H 2 O)} 7g / liter Formalin (37% HCHO) 20ml / l sodium hydroxide (NaOH) 10 g / l sodium potassium tartrate 20 g / l plating bath temperature ： 50 ℃

[Step-1430] After that, the mask material layer 92 and the conductive material layer 91 are removed in a plane parallel to the surface of the support 11 to leave the mask material layer 92 on the columnar portion 91B (step 1430). FIG. 44 (B)). This removal can be performed by, for example, a chemical mechanical polishing method (CMP method).

[Step-1440] Next, the conductive material layer 91
The conductive material layer 91, the mask material layer 92, and the adhesion layer 90 are etched under anisotropic etching conditions in which the etching rate of the adhesion layer 90 is higher than the etching rate of the mask material layer 92. As a result, a conical electron emission electrode 16E is formed in the opening 15 (see FIG. 45A). When the mask material layer 92 remains at the tip of the electron emission electrode 16E, the mask material layer 92 can be removed by wet etching using a dilute hydrofluoric acid aqueous solution.

[Step-1450] Next, the side wall surface of the opening 15 provided in the insulating layer 13 inside the opening 15 is receded under isotropic etching conditions, as shown in FIG. The field emission device is completed. At this time, the etching stop layer 93 is also removed. The isotropic etching may be the same as that described in Modification-1 of Manufacturing Method.

By the way, in the electron emission electrode 16E formed in the manufacturing method modification-2, the manufacturing method modification-1.
A sharper conical shape is achieved as compared with the electron-emitting electrode 16E formed by. This is due to the difference between the shape of the mask material layer 92 and the ratio of the etching rate of the conductive material layer 91 to the etching rate of the mask material layer 92. This difference will be described with reference to FIG. FIG.
6 is a diagram showing how the surface profile of the object to be etched changes at regular time intervals. FIG. 46A shows a case where a mask material layer 92 made of copper is used, and FIG. ) Is a mask material layer 92 made of a resist material.
Are respectively shown. For the sake of simplicity, it is assumed that the etching rate of the conductive material layer 91 is equal to the etching rate of the adhesion layer 90, and the illustration of the adhesion layer 90 is omitted in FIG.

When the mask material layer 92 made of copper is used (see FIG. 46A), the etching rate of the mask material layer 92 is sufficiently lower than the etching rate of the conductive material layer 91. The mask material layer 92 does not disappear in the inside, so that the electron emission electrode 16E having a sharp tip can be formed. On the other hand, when a mask material layer 92 made of a resist material is used (FIG. 46).
(B) shows that the etching rate of the mask material layer 92 is not so slow as compared with the etching rate of the conductive material layer 91, so that the mask material layer 92 is liable to disappear during the etching. Later electron emission electrode 16
The conical shape of E tends to be dull.

Also, the mask material layer 9 remaining on the columnar portion 91B
2 has an advantage that the shape of the electron emission electrode 16E is hard to change even if the depth of the columnar portion 91B slightly changes. In other words, the depth of the columnar portion 91B can change due to the thickness of the conductive material layer 91 and variations in step coverage, but since the width of the columnar portion 91B is substantially constant regardless of the depth,
The width of the mask material layer 92 is also substantially constant, and there is no great difference in the shape of the finally formed electron emission electrode 16E.
On the other hand, in the mask material layer 92 remaining in the concave portion 91A, the width of the mask material layer also changes depending on whether the concave portion 91A is shallow or deep, so that the concave portion 91A is shallow and the thickness of the mask material layer 92 is small. The thinner the thinner, the earlier the blunting of the conical shape of the electron emission electrode 16E starts. The electron emission efficiency of the field emission device is determined by the potential difference between the gate electrode and the cathode electrode, the distance between the gate electrode and the cathode electrode, the work function of the constituent materials of the electron emission portion, and the tip of the electron emission portion. It also changes depending on the shape. Therefore, it is preferable to select the shape of the mask material layer and the etching rate as described above as necessary.

[Spindt Field Emission Element: Modification-3 of Manufacturing Method] Modification-3 of the manufacturing method is a modification of Modification-2 of the manufacturing method. In a third modification of the manufacturing method, in the step (e), a substantially funnel including a columnar portion and an enlarged portion communicating with the upper end of the columnar portion reflecting the step between the upper end surface and the bottom surface of the opening. By forming a mask-shaped concave portion on the surface of the conductive material layer and forming a mask material layer on the entire surface of the conductive material layer in step (f), the mask material layer on the conductive material layer and in the enlarged portion is removed. The mask material layer is left on the column. Hereinafter, a modification of the manufacturing method of the Spindt-type field emission device-
3 will be described with reference to FIGS. 47 and 48 which are schematic partial end views of the support and the like.

[Step-1500] First, FIG.
Are performed in the same manner as in [Step-1400] to [Step-1420] of Modification-2 of the manufacturing method up to the formation of the mask material layer 92 shown in (a), and then the mask material layer on the conductive material layer 91 and in the enlarged portion 91C. By removing only 92, the columnar portion 91B
The mask material layer 92 is left (see FIG. 47A). At this time, for example, by performing wet etching using a diluted hydrofluoric acid aqueous solution, the mask material layer 9 made of copper is removed without removing the conductive material layer 91 made of tungsten.
Only 2 can be selectively removed. Columnar part 91B
The height of the mask material layer 92 remaining inside depends on the etching time, and this etching time is not so severe as long as the portion of the mask material layer 92 embedded in the enlarged portion 91C is sufficiently removed. Does not require Because
The discussion regarding the height of the mask material layer 92 is substantially the same as the discussion regarding the shallow depth of the columnar portion 91B described above with reference to FIG. 46A, and the height of the mask material layer 92 is finally formed. This does not significantly affect the shape of the electron emission electrode 16E.

[Step-1510] Next, the conductive material layer 91
The etching of the mask material layer 92 and the adhesion layer 90 is performed in the same manner as in the second modification of the manufacturing method to form the electron emission electrode 16E as shown in FIG. As a matter of course, the electron emission electrode 16E may have a conical shape as shown in FIG. 45A, but only the tip portion has a conical shape in FIG. 47B. Modified examples are shown. This shape corresponds to the mask material layer 92 embedded in the columnar portion 91B.
May be low or the etching rate of the mask material layer 92 is relatively high, but this does not hinder the function as the electron emission electrode 16E.

[Step-1520] Thereafter, the side wall surface of the opening 15 provided in the insulating layer 13 inside the opening 15 is retreated under isotropic etching conditions to complete the field emission device shown in FIG. Is done. The isotropic etching may be the same as that described in Modification-1 of Manufacturing Method.

[Spindt Field Emission Element: Modification-4 of Manufacturing Method] Modification-4 of the manufacturing method is a modification of Modification-1 of the manufacturing method. FIG. 49 is a schematic partial end view of the Spindt-type field emission device manufactured by Manufacturing Method Modification-4. Modification-4 of the manufacturing method is different from Modification-1 of the manufacturing method in that the electron-emitting portion includes a base 94 and a conical electron-emitting electrode 16 </ b> E stacked on the base 94. . Here, the base 94 and the electron emission electrode 16E are made of different conductive materials. Specifically, the base 9
Reference numeral 4 denotes a member for adjusting the distance between the electron emission electrode 16E and the opening end of the gate electrode 14, and has a function as a resistor layer and is formed of a polysilicon layer containing impurities. Have been. The electron emission electrode 16E is made of tungsten, and has a conical shape, more specifically, a conical shape. In addition, the base 94 and the electron emission electrode 16E
Between them, an adhesion layer 90 made of TiN is formed. Note that the adhesion layer 90 is not a component essential for the function of the electron emission portion, but is formed for manufacturing reasons. The opening 15 is formed by digging the insulating layer 13 from immediately below the gate electrode 14 to the upper end of the base 94.

Hereinafter, Modification-4 of the manufacturing method will be described with reference to FIGS. 50 to 52 which are schematic partial end views of a support and the like.

[Step-1600] First, the steps up to the formation of the opening 15 are performed in the same manner as in [Step-1300] of the first modification of the manufacturing method. Subsequently, a conductive material layer 94A for forming a base is formed on the entire surface including the inside of the opening 15. Conductive material layer 94A
Functions also as a resistor layer, is composed of a polysilicon layer, and can be formed by a plasma CVD method.
Next, a flattening layer 95 made of a resist layer is formed on the entire surface by a spin coating method so that the surface is substantially flat (see FIG. 50A). Next, both layers are etched under conditions that the etching rates of the planarizing layer 95 and the conductive material layer 94A are substantially equal to each other, and the bottom of the opening 15 is filled with a base 94 having a flat upper surface (see FIG. 50B). ). Etching can be performed by an RIE method using an etching gas containing a chlorine-based gas and an oxygen-based gas. Since the etching is performed after the surface of the conductive material layer 94A is once flattened by the flattening layer 95, the upper surface of the base 94 becomes flat.

[Step-1610] Next, an adhesion layer 90 is formed on the entire surface including the remaining portion of the opening 15, and
A conductive material layer 91 for forming an electron emission portion is formed on the entire surface including the remainder of
Is formed, and the remaining portion of the opening 15 is buried with a conductive material layer 91 (see FIG. 51A). The adhesion layer 90 is a 0.07 μm thick TiN layer formed by a sputtering method, and the conductive material layer 91 is a 0.6 μm thick tungsten layer formed by a low pressure CVD method. Conductive material layer 9
A concave portion 91 </ b> A is formed on the surface of the first member 1 so as to reflect a step between the upper end surface and the bottom surface of the opening 15.

[Step-1620] Next, the conductive material layer 91
A mask material layer 92 made of a resist layer is formed on the entire surface of the substrate by spin coating so that the surface is substantially flat (see FIG. 51B). The mask material layer 92 has a flat surface by absorbing the concave portions 91A on the surface of the conductive material layer 91. Next, the mask material layer 92 is etched by an RIE method using an oxygen-based gas (see FIG. 52A). This etching ends when the flat surface of the conductive material layer 91 is exposed. As a result, the mask material layer 92 is left flat in the concave portions 91A of the conductive material layer 91, and the mask material layer 92 is formed so as to shield the region of the conductive material layer 91 located at the center of the opening 15. I have.

[Step-1630] Next, the conductive material layer 9 is formed in the same manner as in [Step-1340] of Modification-1 of the manufacturing method.
1. When both the mask material layer 92 and the adhesion layer 90 are etched, the electron emission electrode 16E having a conical shape corresponding to the magnitude of the resist selectivity and the adhesion layer 90 are formed based on the above-described mechanism. Is completed (see FIG. 52B). Thereafter, when the side wall surface of the opening 15 provided in the insulating layer 13 inside the opening 15 is retreated, the field emission device shown in FIG. 49 can be obtained.

[Spindt Field Emission Device: Modification-5 of Manufacturing Method] Modification-5 of the manufacturing method is modification-2 of the manufacturing method. FIG. 54B is a schematic partial end view of the Spindt-type field emission device manufactured by Modification-5 of the manufacturing method. Modification of Manufacturing Method-5 is Modification of Manufacturing Method-
The difference from 2 is that the electron emission portion is composed of a base 94 and a conical electron emission electrode 16 </ b> E stacked on the base 94, as in Modification-4 of the manufacturing method. Here, the base 94 and the electron emission electrode 16E are made of different conductive materials. Specifically, the base 94 is a member for adjusting the distance between the electron emission electrode 16E and the opening end of the gate electrode 14, has a function as a resistor layer, and contains impurities. And a polysilicon layer. The electron emission electrode 16E is made of tungsten, and has a conical shape, more specifically, a conical shape. In addition, between the base 94 and the electron emission electrode 16E,
An adhesion layer 90 made of TiN is formed. Note that the adhesion layer 90 is not a component essential for the function of the electron emission portion, but is formed for manufacturing reasons. The opening 15 is formed by digging the insulating layer 13 from immediately below the gate electrode 14 to the upper end of the base 94.

Hereinafter, Modification-5 of the manufacturing method will be described with reference to FIGS. 53 and 54 which are schematic partial end views of a support and the like.

[Step-1700] First, the steps up to the formation of the opening 15 are performed in the same manner as in [Step-1300] of Modification-1 of the manufacturing method. Next, a conductive material layer for forming a base is formed on the entire surface including the inside of the opening 15, and the conductive material layer is etched, whereby a base 94 burying the bottom of the opening 15 can be formed. Although the illustrated base 94 has a flattened surface, the surface may be concave. The base 94 having a flattened surface can be formed by a process similar to [Step-1600] of the fourth modification of the manufacturing method. Further, an adhesive layer 90 and a conductive material layer 91 for forming an electron emitting portion are sequentially formed on the entire surface including the remaining portion of the opening 15. At this time, a substantially funnel-shaped concave portion 91A composed of a columnar portion 91B reflecting a step between the upper end surface and the bottom surface of the remaining portion of the opening 15 and an enlarged portion 91C communicating with the upper end of the columnar portion 91B is formed of a conductive material layer. The thickness of the conductive material layer 91 is selected so as to be generated on the surface of the conductive material layer 91. Next, a mask material layer 92 is formed over the conductive material layer 91.
This mask material layer 92 is formed using, for example, copper.
FIG. 53A shows a state in which the process up to this point has been completed.

[Step-1710] Next, the mask material layer 9
2 and the conductive material layer 91 are removed in a plane parallel to the surface of the support 11 to leave the mask material layer 92 on the columnar portion 91B (see FIG. 53B). This removal
It can be performed by a chemical mechanical polishing method (CMP method) in the same manner as in [Step-1430] of Modification-2 of the manufacturing method.

[Step-1720] Next, the conductive material layer 91
When the mask material layer 92 and the adhesion layer 90 are etched, the electron emission electrode 16E having a conical shape corresponding to the magnitude of the resist selectivity is formed based on the mechanism described above. The etching of these layers can be performed in the same manner as in [Step-1440] of Modification-2 of the manufacturing method. An electron emission portion is formed by the electron emission electrode 16E and the base 94, and the adhesion layer 90 remaining between the electron emission electrode 16E and the base 94. Of course, the electron emission portion may have a conical shape as a whole, but FIG.
4 shows a state where a part of 4 remains so as to bury the bottom of the opening 15. Such a shape can occur when the height of the mask material layer 92 buried in the columnar portion 91B is low or the etching rate of the mask material layer 92 is relatively high, but it does not hinder the function as the electron emission portion. There is no.

[Step-1730] Thereafter, the side wall surface of insulating layer 13 is recessed inside opening 15 under isotropic etching conditions, whereby the field emission device shown in FIG. 54B is completed. . The isotropic etching conditions may be the same as those described in Modification-1 of Manufacturing Method.

[Spindt Field Emission Element: Modification-6 of Manufacturing Method] Modification-6 of the manufacturing method is a modification of Modification-3 of the manufacturing method. Modification-6 of Manufacturing Method is Modification-3 of Manufacturing Method
The different point from the first embodiment is that the electron emission portion is composed of a base 94 and a conical electron emission electrode 16 </ b> E stacked on the base 94, similarly to the manufacturing method-4. Less than,
Modification-6 of the manufacturing method will be described with reference to FIG. 55 which is a schematic partial end view of a support and the like.

[Step-1800] Steps up to the formation of the mask material layer 92 are performed in the same manner as in [Step-1700] of Modification-5 of the manufacturing method. After that, only the mask material layer 92 on the conductive material layer 91 and in the enlarged portion 91C is removed to leave the mask material layer 92 on the columnar portion 91B (see FIG. 55). For example, wet etching using a diluted hydrofluoric acid aqueous solution is performed,
Only the mask material layer 92 made of copper can be selectively removed without removing the conductive material layer 91 made of tungsten. Subsequent processes such as the etching of the conductive material layer 91 and the mask material layer 92 and the isotropic etching of the insulating layer 13 can be all performed in the same manner as the manufacturing method modification-5.

[Flat-type field emission device (No. 3)] The flat-type field emission device (No. 3) is a modification of the above-described flat-type field emission device (No. 1). The flat field emission device (No. 3) is different from the flat field emission device (No. 1) in that it has a fourth structure. That is, the planar type field emission device (No. 3) comprises (A) a band-shaped spacer made of an insulating material disposed on the support 11, and (B) a band-shaped material layer 314A in which a plurality of openings 315 are formed. , And (C) an electron-emitting portion, and the strip-shaped material layer 3 is in contact with the top surface of the spacer and the opening 315 is located above the electron-emitting portion.
14A is stretched. The belt-shaped material layer 314A is fixed to the top surface of the spacer with a thermosetting adhesive (for example, an epoxy-based adhesive). Alternatively, as shown in FIG. 56, a schematic partial cross-sectional view near the end of the support 11 is shown in FIG.
Both ends of the strip-shaped material layer 314A may be fixed to the periphery of the support 11. More specifically, for example, a protrusion 316 is formed in advance on the periphery of the support 11, and a thin film 317 of the same material as the material forming the belt-shaped material layer 314 </ b> A is formed on the top surface of the protrusion 316. Keep it. Then, in a state where the strip-shaped material layer 314A is stretched, the thin film 317 is formed.
Is welded using, for example, a laser. The protrusion 316
Can be formed simultaneously with the formation of the spacer, for example.

Hereinafter, an example of a method for manufacturing the flat field emission device (No. 3) will be described.

[Step-1900] First, a striped conductive material for a cathode electrode extending in the first direction on the support 11 in the same manner as in [Step-600] of the flat field emission device (No. 1). Cathode electrode 12 composed of layers
(Comprising Cr).

[Step-1910] Next, the insulating layer 13 is formed on the entire surface in the same manner as in [Step-610] of the flat field emission device (No. 1). After that, an opening 15 is formed in the insulating layer 13 using a lithography technique and an etching technique. Alternatively, for example, by a screen printing method,
When the insulating layer 13 is formed, the opening 15 may be formed at the same time. Thus, the surface of the cathode electrode 12 corresponding to the electron emission portion can be exposed at the bottom of the opening 15. Here, the insulating layer 13 corresponds to a spacer.

[Step-1320] Thereafter, a strip-shaped material layer 314A having a plurality of openings 315 formed therein is formed.
The insulating layer 1 serving as a gate electrode support or a spacer such that the opening 315 is located above the electron-emitting portion.
3 and arranged in a second direction different from the first direction.
14A, so that a strip-shaped material layer 31 is formed.
4A, a gate electrode 314 having a plurality of openings 315 is located above the electron-emitting portion.

[0310] The method of forming such a gate electrode is as follows.
The present invention can be applied to the manufacture of the various field emission devices described above.

[Flat-type field emission device (No. 4)] The flat-type field emission device (No. 4) is a modification of the flat-type field emission device (No. 3). The flat field emission device (No. 4)
As shown in a schematic partial cross-sectional view of FIG. 57A, the cathode electrode 1 is different from the planar type field emission device (No. 3).
A partition 313 (corresponding to a spacer) is provided between the second electrode 2 and the cathode electrode 12. Cathode electrode 12, strip-shaped material layer 314A and gate electrode 314, and partition wall 3
FIG. 57B shows a schematic layout view of the thirteenth embodiment.

[0312] The strip-shaped material layer 314A is formed on the partition wall 31.
3 is fixed to the top surface with a thermosetting adhesive (for example, an epoxy-based adhesive). Alternatively, similarly to the schematic partial cross-sectional view shown in FIG. 56, both ends of the strip-shaped band-shaped material layer 314A may be fixed to the peripheral portion of the support 11. More specifically, for example, a protrusion 316 is formed in advance on the periphery of the support 11, and a belt-shaped material layer 314 </ b> A is formed on the top surface of the protrusion 316.
Is formed in advance. Then, with the strip-shaped material layer 314A stretched, the thin film 317 is welded to the thin film 317 by using, for example, a laser.

The flat field emission device (No. 4) can be manufactured by, for example, a manufacturing method described below.

[Step-2000] First, a partition 313 constituting a spacer (gate electrode support) on the support 11
Is formed based on, for example, a sandblast method.

[Step-2010] Thereafter, an electron-emitting portion is formed on the support 11. Specifically, a mask layer made of a resist material is formed on the entire surface by a spin coating method, and the mask layer in a region where a cathode electrode is to be formed between the partitions 313 is removed. afterwards,
In the same manner as in [Step-600] of the flat-type field emission device (No. 1), a cathode electrode conductive material layer made of chromium (Cr) is formed on the entire surface by a sputtering method, and then the mask layer is removed. As a result, the conductive material layer for the cathode electrode formed on the mask layer is also removed, and the cathode electrode 12 functioning as an electron emission portion is left between the partition walls 313.

[Step-2020] Thereafter, a strip-shaped band-shaped material layer 314A in which a plurality of openings 315 are formed.
Are arranged in such a manner that the plurality of openings 315 are positioned above the electron-emitting portions while being supported by the partition 313 serving as a spacer.
A, and a gate electrode 314 having a plurality of openings 315 is located above the electron-emitting portion. The disposing method of the strip-shaped material layer 314A may be as described above.

[0317] The method of forming such a gate electrode is as follows.
The present invention can be applied to the manufacture of the various field emission devices described above.

The planar shape of the opening 315 in the flat field emission device (No. 3) or the flat field emission device (No. 4) is not limited to a circle. Modification examples of the shape of the opening 315 provided in the belt-shaped material layer 314A are illustrated in FIGS. 58A, 58B, 58C, and 58D.

[Field Emission Element with Focusing Electrode] FIG. 59 is a schematic partial end view of the electron emitting portion 16 and the focusing electrode 60 in the display device according to the second configuration of the present invention. In the example shown in FIG. 59, a second insulating layer 413 is formed on the gate electrode 14 and the insulating layer 13 and the second
Focusing electrode 60 is formed on insulating layer 413.
In the focusing electrode 60 and the second insulating layer 413, the opening 15
There is provided an opening 415 communicating with the opening. Although the Spindt-type field emission device has been exemplified, the field emission device is not limited to this, and the various field emission devices described above can be used.

In the field emission device in which the focusing electrode 60 is combined, substantially, after the second insulating layer 413 is formed on the gate electrode 14 and the insulating layer 13, the second insulating layer 413 is formed. It is manufactured by including the step of forming the focusing electrode 60 thereon and then forming the opening 415 in the focusing electrode 60 and the second insulating layer 413 in the steps of the above-described various methods for manufacturing a field emission device. So you can
Detailed description is omitted. Incidentally, depending on the patterning of the focusing electrode, a focusing electrode of a type in which one or a plurality of electron-emitting portions or a focusing electrode unit corresponding to one or a plurality of pixels can be formed, or an effective area can be obtained. Can be formed as a focusing electrode of a type in which is covered with one sheet of conductive material.

The focusing electrode is formed not only by such a method but also by, for example, a 42% Ni—
After forming an insulating film made of, for example, SiO _{2 on} both surfaces of a metal plate made of an Fe alloy, a focusing electrode may be formed by forming an opening 415 by punching or etching a region corresponding to each pixel. it can. Then, the cathode panel, the metal plate, and the anode panel are stacked, and a frame is disposed on the outer peripheral portion of both panels, and a heat treatment is performed to bond the insulating film formed on one surface of the metal plate to the insulating layer 13. Then, the display device can be completed by bonding the insulating film formed on the other surface of the metal plate and the anode panel, integrating these members, and thereafter sealing them in a vacuum.

Although the present invention has been described based on the embodiments of the present invention, the present invention is not limited to these embodiments. The conditioning conditions, the configurations and structures of the display device and the field emission device, and the configurations and structures of the conditioning means described in the embodiments of the invention are merely examples, and can be appropriately changed. The method of manufacturing the emission element is also an example, and can be appropriately changed.

Further, various materials used in the manufacture of the cold cathode field emission device are also examples, and can be appropriately changed. In the cold cathode field emission device, one electron emission portion (electron emission electrode) corresponds to one opening portion. However, depending on the structure of the cold cathode field emission device, one opening portion is provided. A configuration in which a plurality of electron emission portions (electron emission electrodes) correspond to the portion, or a configuration in which one electron emission portion (electron emission electrode) corresponds to the plurality of openings. Alternatively, a mode in which a plurality of openings are provided in the gate electrode, one opening communicating with the plurality of openings in the insulating layer is provided, and one or a plurality of electron emission portions can be provided.

[0324] The gate electrode may be a gate electrode in which the effective area is covered with one sheet of conductive material (having an opening). In this case, a positive voltage (for example, 160 volts) is applied to the gate electrode. Then, for example, a switching element composed of a TFT is provided between the electron-emitting section constituting each pixel and the cathode electrode control circuit, and the state of application to the electron-emitting section constituting each pixel is changed by the operation of the switching element. Control to control the light emitting state of the pixel.

Alternatively, the cathode electrode may be a cathode electrode in which the effective area is covered with one sheet of conductive material. In this case, a voltage (for example, 0 volt) is applied to the cathode electrode. And, for example, a switching element composed of a TFT is provided between the electron emission unit and the gate electrode control circuit constituting each pixel,
By the operation of the switching element, the state of application to the electron-emitting portion constituting each pixel is controlled, and the light-emitting state of the pixel is controlled.

[0326]

According to the conditioning method of the present invention, it is possible to end discharge in a short period of time in a short time, and to cause damage to the cold-cathode field-emission device, thereby significantly deteriorating the quality of image display. Can be avoided. Further, after a discharge occurs and the electrical connection between the high-voltage circuit and the anode electrode is cut off, the electrical connection between the high-voltage circuit and the anode electrode can be automatically restored. In the implementation of the conditioning method of the present invention, there is no need to use any special parts or materials, so that the implementation can be performed at low cost. In addition, conditioning can be performed regardless of the presence or absence of the focusing electrode, and various circuits for conditioning can be incorporated in the completed cold cathode field emission display device. Can be used as it is as a kind of safety circuit at the time of displaying an image of the cold cathode field emission display. In addition, after the completion of the cold cathode field emission display, if the brightness of the cold cathode field emission display decreases due to the long-term use of the cold cathode field emission display, etc., the conditioning should be performed again. Is possible.

[Brief description of the drawings]

FIG. 1 is a conceptual diagram of a cold cathode field emission display according to a first configuration in Embodiment 1 of the present invention, and a circuit diagram of a configuration example of a current detection cutoff unit.

FIG. 2 is a schematic partial end view of the cold cathode field emission display device when conditioning is performed in the cold cathode field emission display device according to Embodiment 1 of the present invention. .

FIG. 3 is a schematic partial end view of the cold cathode field emission display device when conditioning is performed in the cold cathode field emission display device according to Embodiment 1 of the present invention; .

FIG. 4 is a diagram showing a voltage applied to both ends of a resistance element generated by a discharge current and a voltage applied to an anode electrode when conditioning is performed in the cold cathode field emission display according to the first configuration in the first embodiment of the invention. FIG. 4 is a diagram schematically showing a temporal change with respect to a voltage V.

FIG. 5 is a conceptual diagram of a cold cathode field emission display according to a first configuration in the second embodiment of the invention.

FIG. 6 is a conceptual diagram of a cold cathode field emission display according to a second configuration in Embodiment 3 of the present invention.

FIG. 7 is a conceptual diagram of a cold cathode field emission display according to a second configuration in Embodiment 4 of the present invention.

FIG. 8 is a conceptual diagram of a cold cathode field emission display according to a first configuration in Embodiment 5 of the present invention, and a schematic diagram for explaining a procedure for applying a pulsed high-voltage circuit supply voltage to an anode electrode. It is.

FIG. 9 is a conceptual diagram of a cold cathode field emission display according to a first configuration in a sixth embodiment of the present invention.

FIG. 10 is a conceptual diagram of a cold cathode field emission display according to a second configuration of the seventh embodiment of the present invention.

FIG. 11 is a conceptual diagram of a cold cathode field emission display according to a second configuration of the eighth embodiment of the present invention.

FIG. 12 is a schematic partial end view showing a typical configuration example of a cold cathode field emission display.

FIG. 13 is a schematic exploded perspective view of a part of the cathode panel and the anode panel.

FIG. 14 is a schematic partial end view of a support and the like for explaining a method of manufacturing a field emission device having a first structure including a Spindt-type field emission device.

FIG. 15 is a schematic partial end view of a support and the like for explaining a method of manufacturing the field emission device having the first structure including the Spindt-type field emission device, following FIG. 14;

FIG. 16 is a schematic partial end view of a substrate or the like for describing an example of a method for manufacturing an anode panel.

FIG. 17 is a schematic partial end view of a support and the like for explaining a method of manufacturing a field emission device having a first structure including a crown-type field emission device.

FIG. 18 is a schematic partial end view of a support and the like for describing a method of manufacturing the field emission device having the first structure including the crown-type field emission device, following FIG. 17;

FIG. 19 is a schematic partial end view of a support or the like for explaining a method of manufacturing the field emission device having the first structure including the crown-type field emission device, following FIG.
It is a partial perspective view.

FIG. 20 is a schematic partial cross-sectional view of a support and the like for describing a method of manufacturing a field emission device having a first structure including a flat field emission device.

FIG. 21 is a schematic partial cross-sectional view of a support and the like for describing a method of manufacturing a modification of the field emission device having the first structure including the flat field emission device.

FIG. 22 is a schematic partial end view of a support and the like for describing a method of manufacturing another modification of the field emission device having the first structure including the flat field emission device.

FIG. 23 is a schematic partial end view of a support and the like for explaining a method of manufacturing another modified example of the field emission device having the first structure including the flat field emission device, following FIG. 22; is there.

FIG. 24 is a schematic partial cross-sectional view of a support and the like for describing a method for manufacturing a field emission device having a second structure composed of a flat field emission device.

FIG. 25 is a schematic partial cross-sectional view of a modification of the field emission device having the second structure composed of the planar field emission device.

FIG. 26 is a schematic partial cross-sectional view of another modification of the field emission device having the second structure including the planar field emission device.

FIG. 27 is a schematic partial end view of a support or the like for explaining a method of manufacturing still another modified example of the field emission device having the second structure composed of the planar field emission device, and FIG. FIG.

FIG. 28 is a schematic partial end view of a support and the like for explaining a method of manufacturing another modification of the field emission device having the second structure composed of the planar field emission device, following FIG. 27; And a partial perspective view.

FIG. 29 is a schematic partial end view of a support and the like for explaining a method of manufacturing another modification of the field emission device having the second structure composed of the planar field emission device, following FIG. 28; And a partial perspective view.

FIG. 30 is a schematic partial cross-sectional view of a support and the like for illustrating a method of manufacturing another modification of the field emission device having the second structure composed of the planar field emission device, following FIG. 29; It is.

FIG. 31 is a schematic partial cross-sectional view of a support and the like for describing a method of manufacturing still another modified example of the field emission device having the second structure including the flat field emission device.

FIG. 32 is a schematic partial end view of a support or the like for describing a method of manufacturing still another modified example of the field emission device having the second structure composed of the planar field emission device.

FIG. 33 is a schematic partial end view of a support and the like for describing a method of manufacturing still another modified example of the field emission device having the second structure composed of the planar field emission device.

FIG. 34 is a schematic partial end view of a support and the like for explaining a method of manufacturing another modification of the field emission device having the second structure composed of the planar field emission device, following FIG. 33; It is.

FIG. 35 is a schematic partial cross-sectional view of a field emission device having a third structure including an edge type field emission device.

FIG. 36 is a schematic partial end view of a support and the like for explaining a method of manufacturing an example of a field emission device having a third structure composed of an edge type field emission device.

FIG. 37 is a schematic partial end view of a support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-1] for manufacturing the Spindt-type field emission device shown in FIG. 40; is there.

FIG. 38 is a schematic view of a support or the like for explaining [Spindt-type field emission device: modification of manufacturing method-1] for manufacturing the Spindt-type field emission device shown in FIG. 40, following FIG. 37; It is a partial end view.

FIG. 39 is a schematic view of a support or the like for explaining [Spindt-type field emission device: modification of manufacturing method-1] for manufacturing the Spindt-type field emission device shown in FIG. 40, following FIG. 38; It is a partial end view.

FIG. 40 is a schematic partial end view of a Spindt-type field emission device obtained by [Spindt-type field emission device: Modification of Manufacturing Method-1].

FIG. 41 is a view for explaining a mechanism for forming a conical electron emission portion.

FIG. 42 is a diagram schematically showing a relationship between a resist selectivity and the height and shape of an electron-emitting portion.

FIG. 43 is a schematic partial end view of a support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-2].

FIG. 44 is a schematic partial end view of the support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-2], following FIG. 43;

FIG. 45 is a schematic partial end view of the support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-2], following FIG. 44;

FIG. 46 is a diagram showing how the surface profile of an object to be etched changes at regular time intervals.

FIG. 47 is a schematic partial end view of a support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-3].

FIG. 48 is a schematic partial end view of the support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-3], following FIG. 47;

FIG. 49 is a schematic partial end view of a Spindt-type field emission device manufactured by [Spindt-type field emission device: modification of manufacturing method-4].

FIG. 50 is a schematic partial end view of a support or the like for explaining [Spindt-type field emission device: modification of manufacturing method-4].

FIG. 51 is a schematic partial end view of the support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-4], following FIG. 50;

FIG. 52 is a schematic partial end view of a support and the like for explaining [Spindt-type field emission device: modification of manufacturing method-4], following FIG. 51;

FIG. 53 is a schematic partial end view of a support and the like for explaining [Spindt-type field emission device: Modification-5 of manufacturing method].

FIG. 54 is a schematic partial end view of the support and the like for explaining [Spindt-type field emission device: Modification-5 of manufacturing method], following FIG. 53;

FIG. 55 is a schematic partial end view of a support and the like for describing [Spindt-type field emission device: modification-6 of manufacturing method].

FIG. 56 is a schematic partial end view of [Flat field emission device (No. 3)].

FIG. 57 is a schematic partial end view of [Flat field emission device (No. 4)].

FIG. 58 is a schematic plan view showing a plurality of openings of a gate electrode.

FIG. 59 is a schematic partial end view of a cold cathode field emission device having an electron emission portion and a focusing electrode.

[Explanation of symbols]

10: cathode panel, 11: support, 11A
... concave portions, 12, 112, 212 ... cathode electrodes, 112A ... raised portions, 112B ... concave portions, 11
2C: Tip, 212A: Edge, 13, 1
3A, 13B, 113, 313 ... insulating layer, 14, 1
4A, 14B, 114, 314... Gate electrode, 1
5, 15A, 15B, 44, 315 ... opening, 16
... Electron emission portions, 16A, 16B, 16C, 16D,
16E: electron emission electrode, 16A: electron emission electrode, 17: release layer, 18: conductor layer, 20 ...
.Anode panel, 21... Substrate, 22, 22R, 2
2G, 22B phosphor layer, 23 black matrix, 24 anode electrode, 25 frame, 3
0 ... cathode electrode control circuit, 31 ... gate electrode control circuit, 32 ... anode electrode control circuit, 40 ...
・ Current detection cutoff circuit, R: resistance element, C: capacitor, 41: switching circuit, 42: high voltage circuit, 43: gate voltage supply circuit, 44: gate driver , 45 ... High voltage circuit controller, 50 ...
· Comparator, 51 ··· Comparison value generation means, 52 ··· Latch circuit, 53 ··· Timer circuit, 54 ··· Off time setting means, 55 ··· NAND circuit, 56 ··· Isolation circuit , 57 ... on / off driver, 6
0: focusing electrode, 80: release layer, 81: conductive composition layer, 82: resistor layer, 83: selective growth region of carbon thin film, 84: mask layer, 85 ... metal particles, 86 ... carbon thin film, 87, 187 ... sphere, 1
87A: core material, 187B: surface treatment layer, 88
..Composition layer, 88A: dispersion medium, 88B: cathode electrode material, 89: resist layer, 89A: resist opening, 90: adhesion layer, 91: conductive material layer , 91A ... concave portion, 91B ... columnar portion, 91C
..Enlarged portion, 92: mask material layer, 93: etching stop layer, 94: base, 94A: conductive material layer, 95: flattening layer, 314A: strip-shaped material layer ,
316: Projection, 317: Thin film

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5C012 AA01 VV02 5C036 EE01 EF01 EF06 EF09 EG50 EH21

Claims (17)

[Claims] 1. A cathode panel provided with a plurality of cold cathode field emission devices each comprising a cathode electrode, a gate electrode, and an electron emission portion, and an anode panel provided with a phosphor layer and an anode electrode, at their peripheral portions. A method for conditioning a cold cathode field emission display device, comprising: (A) a current detection cutoff means connected to a cathode electrode; and (B) an electric current connection means connected to an anode electrode. A cathode electrode and a gate electrode are short-circuited by using conditioning means comprising a high-voltage circuit whose electrical connection state is controlled by the current detection and interruption means, and (a) the high-voltage circuit is electrically connected to the anode electrode do it,
The high-voltage circuit supply voltage applied from the high-voltage circuit to the anode electrode is gradually increased to a predetermined value. (B) While the high-voltage circuit supply voltage is raised to the predetermined value, the voltage between the anode electrode and the gate electrode is increased. Detecting a discharge current flowing through the current detection and interruption means due to the occurrence of the discharge of the high voltage circuit and the anode electrode for a predetermined time by the operation of the current detection and interruption means when the discharge current exceeds a specified value. A method for conditioning a cold cathode field emission display device, wherein an electrical connection between the cold cathode field emission display device is cut off. 2. A cathode panel provided with a plurality of cold cathode field emission devices each comprising a cathode electrode, a gate electrode, and an electron emission portion, and an anode panel provided with a phosphor layer and an anode electrode, each having a peripheral portion. A method for conditioning a cold cathode field emission display device, comprising: (A) a current detection cutoff means connected to a cathode electrode; and (B) an electric current connection means connected to an anode electrode. (C) a gate voltage supply circuit electrically connected to the gate electrode; and (D) a high voltage circuit electrically connected to the gate electrode. (A) a high voltage circuit and an anode electrode in a state in which a voltage is applied to the gate electrode from a gate voltage supply circuit using a conditioning means comprising The electrically connected,
The high-voltage circuit supply voltage applied from the high-voltage circuit to the anode electrode is gradually increased to a predetermined value. (B) While the high-voltage circuit supply voltage is raised to the predetermined value, the voltage between the anode electrode and the gate electrode is increased. A discharge current flowing through the current detection and interrupting means through the capacitor due to the occurrence of the discharge of the capacitor, and when the discharge current exceeds a specified value, the operation of the current detection and interrupting means causes the high voltage to be detected for a predetermined time. A method for conditioning a cold cathode field emission display device, comprising interrupting an electrical connection between a circuit and an anode electrode. 3. A cathode panel provided with a plurality of cold cathode field emission devices each comprising a cathode electrode, a gate electrode, and an electron emission portion, and an anode panel provided with a phosphor layer and an anode electrode, each having a peripheral portion. A method for conditioning a cold cathode field emission display device comprising a focusing electrode disposed between a gate electrode and an anode electrode, comprising: (A) a current detection and interruption means connected to the cathode electrode; (B) using a conditioning means consisting of a high voltage circuit electrically connected to the anode electrode, and the electrical connection state being controlled by the current detection cutoff means, and connecting the cathode electrode, the gate electrode and the focusing electrode to each other; In a short circuit state, (a) the high voltage circuit and the anode electrode are electrically connected,
The high-voltage circuit supply voltage applied from the high-voltage circuit to the anode electrode is gradually increased to a predetermined value. (B) While the high-voltage circuit supply voltage is raised to the predetermined value, the voltage between the anode electrode and the focusing electrode is increased. Detecting a discharge current flowing through the current detection and interruption means due to the occurrence of the discharge of the high voltage circuit and the anode electrode for a predetermined time by the operation of the current detection and interruption means when the discharge current exceeds a specified value. A method for conditioning a cold cathode field emission display device, wherein an electrical connection between the cold cathode field emission display device is cut off. 4. The conditioning means further comprises a gate voltage supply circuit electrically connected to the gate electrode. Instead of short-circuiting the cathode electrode, the gate electrode and the focusing electrode, the conditioning means includes a gate electrode and a focusing electrode. Are short-circuited, and a voltage is applied to the gate electrode from the gate voltage supply circuit.
4. The method according to claim 3, wherein the method is performed. 5. The method according to claim 1, wherein the steps (a) and (b) are performed while evacuating a space between the cathode panel and the anode panel. The method for conditioning a cold cathode field emission display device according to claim 1. 6. A cathode panel provided with a plurality of cold cathode field emission devices each comprising a cathode electrode, a gate electrode, and an electron emission portion, and an anode panel provided with a phosphor layer and an anode electrode, each having a peripheral portion. In the cold cathode field emission display device, the high voltage circuit supply voltage applied from the high voltage circuit to the anode electrode is increased stepwise to a predetermined value so that the voltage between the anode electrode and the cold cathode field emission device is increased. A method for conditioning a cold cathode field emission display device that causes a discharge to occur, wherein a pulse width of a pulsed high-voltage circuit supply voltage is PW ₁ , a pulse period is PW ₀ , and a pulse voltage value is PV, ) and a pulse voltage PV and the pulse period PW ₀ is constant, while successively to extend the pulse width PW _1, a high pulsed pulse voltage value PV to the anode electrode Applying a circuit supply voltage, if became (b) pulse width PW _1> pulse period PW _0, increasing the pulse voltage value PV, until the pulse voltage PV reaches the predetermined value, step (a) And a step (b) of repeating the method for conditioning a cold cathode field emission display. 7. The method for conditioning a cold cathode field emission display according to claim 6, wherein a focusing electrode is provided between the gate electrode and the anode electrode. 8. The method according to claim 1, wherein the steps (a) and (b) are repeated while the space between the cathode panel and the anode panel is evacuated until the pulse voltage value PV reaches the predetermined value. A method for conditioning a cold cathode field emission display according to claim 6. 9. The method according to claim 1, wherein after the space between the cathode panel and the anode panel is sealed, the steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value. The method for conditioning a cold cathode field emission display according to claim 6 or 7, wherein: 10. The method according to claim 1, further comprising repeating steps (a) and (b) while evacuating a space between the cathode panel and the anode panel until the pulse voltage value PV reaches the predetermined value. 7. The method according to claim 6, wherein after sealing a space between the anode and the anode panel, the steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value. 8. The method for conditioning a cold cathode field emission display according to item 7. 11. The gate electrode is electrically connected to a gate voltage supply circuit. In a state where a voltage is not applied from the gate voltage supply circuit to the gate electrode, the gate voltage is not changed until the pulse voltage value PV reaches the predetermined value. After repeating the steps (a) and (b), with the voltage applied to the gate electrode from the gate voltage supply circuit, the steps (a) and () are repeated until the pulse voltage value PV reaches the predetermined value. 8. The method according to claim 6, wherein b) is repeated again. 12. The method according to claim 1, further comprising: evacuating a space between the cathode panel and the anode panel while applying no voltage to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value. After the steps (a) and (b) are repeated, the steps (a) and (b) are performed while the voltage is applied to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value. )
12. The method according to claim 11, wherein is repeated. 13. After sealing the space between the cathode panel and the anode panel, the gate voltage supply circuit does not apply a voltage to the gate electrode until the pulse voltage value PV reaches the predetermined value. Step (a) and step (b)
And repeating steps (a) and (b) again while the voltage is applied to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value. The method for conditioning a cold cathode field emission display according to claim 11. 14. The method according to claim 1, further comprising: evacuating a space between the cathode panel and the anode panel while applying no voltage to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value. After the steps (a) and (b) are repeated, the steps (a) and (b) are performed while the voltage is applied to the gate electrode from the gate voltage supply circuit until the pulse voltage value PV reaches the predetermined value. )
Is repeated again, then, after sealing the space between the cathode panel and the anode panel, in a state where no voltage is applied to the gate electrode from the gate voltage supply circuit, until the pulse voltage value PV reaches the predetermined value, After the steps (a) and (b) are repeated, the steps (a) and (b) are repeated until the pulse voltage value PV reaches the predetermined value while a voltage is applied to the gate electrode from the gate voltage supply circuit. The method according to claim 11, wherein (b) is repeated again. 15. The step (a), the characterized in that depending on the discharge frequency and / or the discharge current between the anode electrode and the cold cathode field emission device, the pulse width PW _1, once shortening The method for conditioning a cold cathode field emission display according to claim 6 or 7, wherein: 16. In the step (a), the pulse voltage value PV is temporarily reduced according to a discharge frequency and / or a discharge current between the anode electrode and the cold cathode field emission device. The method for conditioning a cold cathode field emission display according to claim 6 or 7, wherein: 17. The step (a), the a, characterized in that depending on the discharge frequency and / or the discharge current between the anode electrode and the cold cathode field emission device, to interrupt the extension of the pulse width PW ₁ The method for conditioning a cold cathode field emission display according to claim 6 or 7, wherein: