KR20010028025A - Device for preheating wafer - Google Patents

Device for preheating wafer Download PDF

Info

Publication number
KR20010028025A
KR20010028025A KR1019990040062A KR19990040062A KR20010028025A KR 20010028025 A KR20010028025 A KR 20010028025A KR 1019990040062 A KR1019990040062 A KR 1019990040062A KR 19990040062 A KR19990040062 A KR 19990040062A KR 20010028025 A KR20010028025 A KR 20010028025A
Authority
KR
South Korea
Prior art keywords
wafer
elevator
preheating
heater
main
Prior art date
Application number
KR1019990040062A
Other languages
Korean (ko)
Inventor
노상호
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019990040062A priority Critical patent/KR20010028025A/en
Publication of KR20010028025A publication Critical patent/KR20010028025A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: An apparatus for preheating a wafer is provided to improve productivity by performing a preheating process during an interval of time from wafer loading to wafer heating. CONSTITUTION: An apparatus for manufacturing a semiconductor device has main and auxiliary elevators(21,22) and a heater(25) for heating a wafer loaded on the auxiliary elevator. A protecting unit(30) is located on an outer of the main elevator. A reflecting plate(31) is adhered to the inside of an upper part of the protecting unit, transferring heat reflected from the heater to the elevated wafer.

Description

웨이퍼의 예비 가열장치{Device for preheating wafer}Device for preheating wafer

본 발명은 웨이퍼의 예비 가열장치에 관한 것으로서, 보다 상세하게는 화학기상증착 공정중 미리 웨이퍼를 가열하는 예비 가열 공정에서 웨이퍼의 로딩시 미리 가열을 행하여 공정 시간을 단축함으로써 생산성을 향상시킬 수 있는 웨이퍼의 예비 가열장치에 관한 것이다.The present invention relates to a preheating apparatus for a wafer, and more particularly, a wafer capable of improving productivity by shortening the process time by preheating the wafer during loading in a preheating process in which the wafer is heated in advance during the chemical vapor deposition process. It relates to a preheater of.

종래에 웨이퍼의 예비 가열장치는 도 1 에 도시한 바와 같이 도시하지 않은 챔버 내에는 구동수단(10)이 장착되어 있고, 상기 구동수단(10)에는 메인 엘리베이터(11)가 승강 가능케 결합되어 있으며, 상기 메인 엘리베이터(11)의 상측에는 그 상측에 안착된 웨이퍼(W)를 미세하게 승강시키는 보조 엘리베이터(12)가 장착되어 있다.Conventionally, the preheating apparatus for the wafer has a driving means 10 mounted in a chamber (not shown) as shown in FIG. 1, and the main elevator 11 is liftably coupled to the driving means 10. On the upper side of the main elevator 11, an auxiliary elevator 12 for finely raising and lowering the wafer W seated thereon is mounted.

그리고, 상기 메인 엘리베이터(11)의 상측에는 안내부재(13)가 위치되어 있고, 상기 안내부재(13)의 하측에는 서셉터(14)가 장착되어 있으며, 상기 안내부재(13)의 상측에는 열을 발생시키는 히터(15)가 형성되어 있다.In addition, a guide member 13 is positioned above the main elevator 11, a susceptor 14 is mounted below the guide member 13, and a column is positioned above the guide member 13. The heater 15 which produces | generates is formed.

이와 같이 구성된 종래의 예비 가열장치는 보조 엘리베이터(12) 상에 웨이퍼(W)가 로딩되면 구동수단(10)이 작동하여 메인 엘리베이터(11)를 상승시킨 후 서셉터(14)의 위치보다 2mm정도 낮은 위치에서 히터(15)에 의해 예비 가열이 이루어지게 된다.In the conventional preliminary heating apparatus configured as described above, when the wafer W is loaded on the auxiliary elevator 12, the driving means 10 operates to raise the main elevator 11, and then about 2 mm from the position of the susceptor 14. Preheating is done by the heater 15 in a low position.

이는 보조 엘리베이터(12)의 상측에 웨이퍼(W)가 로딩될 때 약 80℃의 온도에서 구동수단(10)의 작동에 의해 메인 엘리베이터(11)가 상승할 때까지 약 5 내지 7초 동안 소요되고, 이어서 약 350℃의 온도가 유지되는 상승 위치로 이동함에 따라 급격한 온도 변화에 의해 웨이퍼(W)가 상당한 열충격을 받게 된다.This takes about 5 to 7 seconds until the main elevator 11 is raised by the operation of the driving means 10 at a temperature of about 80 ° C. when the wafer W is loaded on the upper side of the auxiliary elevator 12. Subsequently, the wafer W is subjected to a significant thermal shock by the rapid temperature change as it moves to the elevated position where the temperature of about 350 ° C is maintained.

그리고, 웨이퍼(W)가 상승된 후에는 45초 동안 예비 가열 상태가 지속되는데, 이는 현재 적용되고 있는 S-RAM(Static RAM), NVM(Non Volatile Memory), 비 메모리 반도체 디바이스 등의 USG 공정에서 하강 지점에서 상승할 때까지의 시간 동안 가열이 이루어지지 않게 됨으로써 생산성이 저하되는 문제점을 내재하고 있었다.After the wafer W is raised, the preheating state is maintained for 45 seconds, which is used in USG processes such as static RAM (S-RAM), non-volatile memory (NVM), and non-memory semiconductor devices. There was a problem in that the productivity was lowered by not being heated for a time until the rising point from the falling point.

이는 웨이퍼의 품질 면에서 예비 가열 시간을 줄이는 것은 불가능하며, 예비 가열 시간은 서셉터의 공정 온도에 비례하는 것으로 알려져 있다.It is not possible to reduce the preheating time in terms of wafer quality, which is known to be proportional to the process temperature of the susceptor.

따라서, 생산성을 향상시키기 위해서는 예비 가열 시간은 그대로 유지하면서 웨이퍼의 로딩시부터 상승시 까지의 시간 동안 예비 가열하는 것이 바람직한 것으로 알려져 있다.Therefore, in order to improve productivity, it is known that it is preferable to preheat during the time from the loading of a wafer until a rise, maintaining the preheating time as it is.

따라서, 본 발명은 상술한 종래 기술의 문제점들을 해결하기 위하여 발명된 것으로서, 본 발명의 목적은 웨이퍼의 로딩시부터 가열시 까지의 시간 동안 예비 가열이 이루어지도록 하여 생산성을 향상시킬 수 있는 웨이퍼의 예비 가열장치를 제공하는데 있다.Accordingly, the present invention has been invented to solve the above-described problems of the prior art, and an object of the present invention is to preliminarily prepare a wafer to improve productivity by performing preheating for a period from the loading of the wafer to the heating. It is to provide a heating device.

도 1 은 종래 웨이퍼의 예비 가열장치를 나타내는 개략도이다.1 is a schematic view showing a preheater of a conventional wafer.

도 2 는 본 발명에 의한 웨이퍼의 예비 가열장치를 나타내는 도면이다.2 is a view showing a preliminary heating apparatus for a wafer according to the present invention.

도 3 은 본 발명에 의한 웨이퍼의 예비 가열장치의 요부를 나타내는 사시도이다.It is a perspective view which shows the principal part of the preheating apparatus of the wafer which concerns on this invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

21: 메인 엘리베이터 22: 보조 엘리베이터21: main elevator 22: auxiliary elevator

25: 히터 30: 보호부재25: heater 30: protection member

31: 반사판31: Reflector

이와 같은 목적을 달성하기 위한 본 발명에 따른 웨이퍼의 예비 가열장치는, 승강되는 메인 및 보조 엘리베이터와, 상기 보조 엘리베이터 상에 로딩된 웨이퍼를 가열하는 히터를 구비하는 반도체 제조장치에 있어서, 상기 메인 엘리베이터의 외측에는 보호부재가 위치되고, 상기 보호부재의 상부 내측에는 상승되는 웨이퍼에 히터로부터 반사된 열을 전달하여 가열하는 반사판이 부착된 것을 특징으로 한다.According to an aspect of the present invention, there is provided a preliminary heating apparatus for a wafer, which includes a main and an auxiliary elevator lifted and a heater for heating a wafer loaded on the auxiliary elevator. The outer side of the protective member is located, the upper inner side of the protective member is characterized in that the reflective plate for heating by transferring the heat reflected from the heater is attached.

따라서, 본 발명에서는 웨이퍼가 로딩된 후부터 상승하는 동안에도 반사판으로부터 전달되는 열이 웨이퍼에 전달되어 예비 가열이 이루어짐으로써 전체적인 예비 가열 시간이 단축되고, 이에 따라 공정 시간을 단축하여 생산성이 향상될 뿐만 아니라 급격하게 웨이퍼로 전달되는 열에 의한 열충격이 완화되는 것이다.Therefore, in the present invention, the heat transferred from the reflecting plate is transferred to the wafer and the preheating is performed even during the ascending time after the wafer is loaded, thereby shortening the overall preheating time, thereby shortening the process time and improving productivity. The thermal shock due to the heat transferred to the wafer is alleviated.

이하, 본 발명의 바람직한 실시예를 첨부된 도면에 의하여 더욱 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.

도 2 는 본 발명에 의한 웨이퍼의 예비 가열장치를 나타내는 도면으로서, 구동 수단(20)은 도시하지 않은 챔버의 내측에 위치된다.2 is a view showing a preliminary heating apparatus for a wafer according to the present invention, wherein the driving means 20 is located inside the chamber (not shown).

상기 구동수단(20)의 상측에는 메인 엘리베이터(21)가 승강 가능케 결합되어 있고, 상기 메인 엘리베이터(21)의 상측에는 보조 엘리베이터(22)가 결합되며, 상기 보조 엘리베이터(22)의 상측에는 웨이퍼(W)가 로딩된다.The main elevator 21 is coupled to the upper side of the drive means 20 to be elevated, the secondary elevator 22 is coupled to the upper side of the main elevator 21, the wafer (above the upper side of the auxiliary elevator 22) W) is loaded.

상기 메인 엘리베이터(21)의 상측에는 안내부재(23)가 위치되며, 상기 안내부재(23)의 저면에는 서셉터(24)가 위치되고, 상기 안내부재(23)의 상측에는 열을 발생시키는 히터(25)가 구비된다.A guide member 23 is positioned above the main elevator 21, a susceptor 24 is positioned on a bottom surface of the guide member 23, and a heater that generates heat above the guide member 23. 25 is provided.

상기 메인 엘리베이터(21)의 외측에는 상측이 개구된 보호부재(30)가 위치되고, 상기 보호부재(30)의 상부 내측에는 히터(25)로부터 발산되는 열을 웨이퍼(W)반사시키는 반사판(31)이 부착되어 있다.The outer side of the main elevator 21, the upper side of the protection member 30 is opened, the upper side of the protection member 30, the reflection plate 31 for reflecting the wafer (W) heat emitted from the heater 25 ) Is attached.

상기 반사판(31)은 금속 또는 유리 등으로 형성될 수 있음은 물론이다.Of course, the reflective plate 31 may be formed of metal or glass.

그리고, 상기 보호부재(30)는 도 3 에 도시한 바와 같이 일측에 웨이퍼(W)를 로딩 또는 언로딩하기 위한 투입구(32)가 형성되어 있다.In addition, as shown in FIG. 3, the protection member 30 is provided with an inlet 32 for loading or unloading the wafer W on one side.

이와 같이 구성된 본 발명에 의한 웨이퍼의 예비 가열장치는 보호부재(30)의 투입구(32)를 통하여 보조 엘리베이터(22)상에 웨이퍼(W)를 로딩하고, 구동수단(20)을 작동시켜 메인 엘리베이터(21)를 상승시키게 된다.The preheating apparatus of the wafer according to the present invention configured as described above loads the wafer W on the subsidiary elevator 22 through the inlet 32 of the protective member 30, and operates the driving means 20 to operate the main elevator. Will raise (21).

이때, 상기 보조 엘리베이터(22) 상에 로딩된 웨이퍼(W)가 상승하는 시간은 약 5 내지 7초 정도 소요되는데, 상기 웨이퍼(W)가 메인 엘리베이터(21)의 작동에 의해 상승하는 동안에도 히터(25)로부터 발산된 열이 도 2 에서 화살표로 도시한 바와 같이 보호부재(30)의 상부 내측에 부착된 반사판(31)에 의해 반사되어 웨이퍼(W)로 전달됨으로써 예비 가열이 이루어지게 된다.At this time, the time that the wafer (W) loaded on the auxiliary elevator 22 rises for about 5 to 7 seconds, while the wafer (W) is raised by the operation of the main elevator (21) heater Heat emitted from the 25 is reflected by the reflecting plate 31 attached inside the upper portion of the protective member 30 as shown by the arrow in FIG. 2 and transferred to the wafer W, thereby preliminary heating is performed.

그리고, 상승된 웨이퍼(W)는 계속적으로 38초 내지 40초 동안 예비 가열이 이루어짐으로써 전체적인 예비 가열 시간을 5 내지 7초 정도 단축시키는 것이 가능케 되는 것이다.Then, the preheated wafer W is continuously made for 38 to 40 seconds, thereby reducing the overall preheating time by 5 to 7 seconds.

따라서, 전체적인 웨이퍼의 예비 가열 시간이 단축됨으로써 생산성이 향상되고, 웨이퍼가 상승하는 이동간에도 반사판으로부터 열이 전달됨으로써 급격한 열전달에 의한 열충격을 완화하는 것이 가능케 되는 것이다.Therefore, productivity is improved by shortening the preheating time of the entire wafer, and heat can be alleviated by rapid heat transfer by transferring heat from the reflector even during the movement of the wafer.

상술한 바와 같이 본 발명에 의하면, 웨이퍼가 로딩된 후부터 상승하는 동안에도 반사판으로부터 전달되는 열이 웨이퍼에 전달되어 예비 가열이 이루어짐으로써 전체적인 예비 가열 시간이 단축되고, 이에 따라 공정 시간을 단축하여 생산성이 향상될 뿐만 아니라 급격하게 웨이퍼로 전달되는 열에 의한 열충격이 완화되는 등의 여러 가지 효과가 있다.As described above, according to the present invention, even after the wafer is loaded, the heat transferred from the reflecting plate is transferred to the wafer and the preheating is performed, thereby shortening the overall preheating time, thereby shortening the process time and improving productivity. In addition to being improved, there are various effects such as the thermal shock caused by the heat rapidly transferred to the wafer.

Claims (1)

승강되는 메인 및 보조 엘리베이터와, 상기 보조 엘리베이터 상에 로딩된 웨이퍼를 가열하는 히터를 구비하는 반도체 제조장치에 있어서,A semiconductor manufacturing apparatus comprising a main and an auxiliary elevator to be elevated and a heater for heating a wafer loaded on the auxiliary elevator, 상기 메인 엘리베이터의 외측에는 보호부재가 위치되고, 상기 보호부재의 상부 내측에는 상승되는 웨이퍼에 히터로부터 반사된 열을 전달하여 가열하는 반사판이 부착된 것을 특징으로 하는 웨이퍼의 예비 가열장치.A protection member is positioned outside the main elevator, and a reflection plate for transferring heat reflected from a heater to a wafer to be raised is attached to an upper inside of the protection member.
KR1019990040062A 1999-09-17 1999-09-17 Device for preheating wafer KR20010028025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990040062A KR20010028025A (en) 1999-09-17 1999-09-17 Device for preheating wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990040062A KR20010028025A (en) 1999-09-17 1999-09-17 Device for preheating wafer

Publications (1)

Publication Number Publication Date
KR20010028025A true KR20010028025A (en) 2001-04-06

Family

ID=19612006

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990040062A KR20010028025A (en) 1999-09-17 1999-09-17 Device for preheating wafer

Country Status (1)

Country Link
KR (1) KR20010028025A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100968478B1 (en) * 2007-01-17 2010-07-07 주식회사 포시산업 Water storage apparatus with structure of multiple layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100968478B1 (en) * 2007-01-17 2010-07-07 주식회사 포시산업 Water storage apparatus with structure of multiple layers

Similar Documents

Publication Publication Date Title
CN101903980B (en) Stage structure and heat treatment apparatus
US5820367A (en) Boat for heat treatment
KR100199680B1 (en) Resist treatment method and resist treatment device
KR900000977A (en) Heat treatment method of substrate and apparatus thereof
KR100221984B1 (en) Method and apparatus for heat treatment
KR970009471A (en) Heating furnace
JP2007519232A (en) Apparatus and apparatus for suppressing thermally induced motion of workpiece
TW201903903A (en) Heat treatment method
JP2010135531A (en) Vacuum heating device
KR20010028025A (en) Device for preheating wafer
KR100608214B1 (en) Heat treatment method of semiconductor wafer
JP4121840B2 (en) Heat treatment apparatus and heat treatment method
KR101257991B1 (en) Transfer device and processing system having same
JP5456257B2 (en) Heat treatment equipment
JP2000269137A (en) Semiconductor manufacturing apparatus and wafer handling method
JP2006019565A (en) Heat treatment apparatus
JP5403984B2 (en) Substrate heat treatment equipment
JPH09307221A (en) Flow solder device and soldering method of mounting board
JP2686498B2 (en) Semiconductor manufacturing equipment
JP4466942B2 (en) Heat treatment equipment
KR0148714B1 (en) Susceptor for low pressure chemical vapour deposition apparatus
JP3609156B2 (en) Substrate heating device
JPH023909A (en) Heating equipment
JPH0888192A (en) Vertical high speed heat treatment equipment
JPH10284569A (en) Wafer conveyer

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination