KR20010026433A - The Fabrication Technology of Single Electron Tunnel Diodes Using Focused Ion Beam Nanoparticle Process - Google Patents
The Fabrication Technology of Single Electron Tunnel Diodes Using Focused Ion Beam Nanoparticle Process Download PDFInfo
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- KR20010026433A KR20010026433A KR1019990037745A KR19990037745A KR20010026433A KR 20010026433 A KR20010026433 A KR 20010026433A KR 1019990037745 A KR1019990037745 A KR 1019990037745A KR 19990037745 A KR19990037745 A KR 19990037745A KR 20010026433 A KR20010026433 A KR 20010026433A
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- Prior art keywords
- ion beam
- single electron
- electron tunnel
- focused ion
- tunnel junction
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 14
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 230000007547 defect Effects 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000523 sample Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
단전자 터널링 소자는 현재의 고밀도 메모리 집적회로 소자를 대체할 수 있는 테라바이트급 이상의 메모리소자제작을 가능하게 하는 차세대 초고밀도 메모리소자이다. 현재까지 단전자 터널링 소자의 제작에 있어서 가장 큰 문제점은 상온에서 열적요동에 의한 제어의 어려움과 공정의 복잡함으로 인해 재현성 및 신뢰성이 떨어진다는 것이다. 이 중에서 가장 시급히 해결되야 할 문제는 상온에서 열적요동을 효과적으로 제어할 수 있는 방법의 개발과 공정의 단순화로 신뢰성을 확보하여 실제 공정에 적용가능한 소자를 제작하는데 목적이 있다.The single electron tunneling device is a next generation ultra high density memory device that enables fabrication of terabyte or more memory devices that can replace current high density memory integrated circuit devices. Until now, the biggest problem in the fabrication of single-electron tunneling device is that the reproducibility and reliability are inferior due to the difficulty of controlling by thermal fluctuations at room temperature and the complexity of the process. The most urgent problem to be solved is the development of a method capable of effectively controlling thermal fluctuations at room temperature and the simplification of the process to secure reliability and to manufacture a device applicable to the actual process.
차세대 초고밀도 메모리 집적회로 소자로 주목받고 있는 단전자 트랜지스터 제작의 새로운 접근으로 상온동작을 가능하게 하며 공정의 단순화로 신뢰성 및 재현성을 높일 수 있는 기술로 사료된다.The new approach to the production of single-electron transistors, which is drawing attention as the next generation ultra high density memory integrated circuit device, is expected to enable room temperature operation and to improve the reliability and reproducibility by simplifying the process.
도 1 집속이온빔을 이용한 단전자 터널 접합 형성 과정Figure 1 Process of forming a single electron tunnel junction using a focused ion beam
도 2 단전자 터널 접합 이미지Fig. 2 Single-electron tunnel junction image
도 3 단전자 터널 다이오드 특성 측정 결과Fig. 3 Measurement result of single electron tunnel diode
＜도면의 주요부분에 대한 부호의 설명＞<Description of the code | symbol about the principal part of drawing>
1 : 집속이온빔 프르브 2 : 단전자 터널접합 생성지역1: focused ion beam probe 2: single electron tunnel junction generation area
3 : 금속층(알루미늄) 4 : 절연체층(SiO2또는 MgO)3: metal layer (aluminum) 4: insulator layer (SiO 2 or MgO)
5 : 기판(p-Si) 6 : 소스전극5 substrate (p-Si) 6 source electrode
7 : 드레인 전극 8 : 가변전원7: drain electrode 8: variable power supply
9 : 전류계(pico-ampere meter) 10 : 스퍼터 영역9: pico-ampere meter 10: sputter area
11 : 전자 채널 영역11: electron channel region
본 발명은 기가 또는 테라바이트급 이상의 차세대 초고밀도 메모리 집적회로 소자로 사용될 수 있는 단전자 터널링 소자 제작방법에 있어서 집속이온빔을 이용하는 새로운 기술이다. 단전자 터널링 소자는 소스에서 드레인으로 이동하는 전자가 터널 접합으로 연결된 섬에 구속되는 현상에 의해 나타나는 Coluomb blockade 효과와 이로 인한 전도도의 진동효과를 이용하는 소자이다. 이를 제작하기 위해서 근본적으로 전자를 구속할 수 있는 금속 혹은 양자 반도체 군섬을 인공적으로 또는 자연발생적으로 형성하여야 한다. 일반적으로 이를 형성하기 위해 직접적인 혹은 간접적인 여러 가지 방법을 사용하게 된다.The present invention is a novel technique using a focused ion beam in a method for manufacturing a single electron tunneling device that can be used as a next generation ultra high density memory integrated circuit device of more than a gigabyte or terabytes. The single-electron tunneling device utilizes the Coluomb blockade effect caused by the phenomenon that electrons moving from the source to the drain are confined to the island connected by the tunnel junction, and thus the vibration effect of the conductivity. In order to fabricate this, a metal or quantum semiconductor island, which can fundamentally constrain electrons, must be formed artificially or naturally. Generally, there are a variety of direct and indirect ways to form this.
집속이온빔을 이용해 효과적인 나노입자 군섬을 형성하기 위해 Ga+빔 중심부근의 방사선 효과에 의해 생성되는 결함에 의해 나노입자를 형성하는 방법이 발명의 핵심이다. 즉, 전자이동을 위한 전자채널 형성부근에 집속이온빔을 노출시키면 전자채널에 결함이 생기게 되고 이 결함으로 인해 전자를 구속할 수 있는 효과적인 나노군섬들이 형성되며 이 섬들은 열적요동에 의해 정확한 동작이 어려운 상온에서도 단전자 터널링 소자의 기본특성인 Coulomb blockade 효과를 나타낸다.The core of the invention is a method of forming nanoparticles by defects generated by the radiation effect near the center of the Ga + beam to form an effective group of nanoparticle islands using a focused ion beam. In other words, if the focused ion beam is exposed near the electron channel formation for electron transport, defects are generated in the electron channel, and this defect forms effective nano-group islands that can confine the electrons. Even at room temperature, the Coulomb blockade effect, which is a basic characteristic of a single electron tunneling device, is exhibited.
도 1 에 집속이온빔을 이용한 방법에 대한 개략적인 묘사가 나타나 있다. 이러한 집속이온빔에 의하여 제작된 상온동작 단전자 터널접합에 대한 상이 도 2 에 나타나 있다.A schematic depiction of the method using the focused ion beam is shown in FIG. 1. An image of the room temperature operating single-electron tunnel junction manufactured by the focused ion beam is shown in FIG. 2.
단전자 터널링 소자의 제작공정은 두단계로 다음과 같이 요약된다.The manufacturing process of the single electron tunneling device is summarized as follows in two steps.
1. 시료증착단계로서 Si기판위에 절연체층으로 SiO2또는 MgO를 2000 ∼ 3000 Å 두께로 증착하고 그 위에 알루미늄을 1000 Å 이하의 두께로 증착한다.1. As a sample deposition step, SiO 2 or MgO is deposited on the Si substrate as an insulator layer at a thickness of 2000 to 3000 GPa and aluminum is deposited to a thickness of 1000 GPa or less.
2. 광리소그래피법을 이용해 Al 금속층을 식각한 후 Ga+빔을 이용해 도 2 의 패턴형태로 소스, 드레인을 연결하는 Al 금속선을 제거한다. 이때 가속 전압은 15 kV, 빔전류는 50 pA 이다. 제작된 단전자 터널 다이오드에 대한 전류-전압 및 전도도-전압 축을 통하여 확인된 성능 특성평가결과가 도 3 에 나타나 있다.2. The Al metal layer is etched by the photolithography method, and then the Al metal line connecting the source and the drain in the pattern form of FIG. 2 is removed by using a Ga + beam. The acceleration voltage is 15 kV and the beam current is 50 pA. The performance characteristic evaluation results confirmed through the current-voltage and conductivity-voltage axes of the fabricated single electron tunnel diode are shown in FIG. 3.
집속이온빔 나노입자 공정을 이용해 상온동작 가능한 단전자 터널다이오드 제작의 성공으로부터 실제 차세대 초고집적 메모리 소자로 사용될 수 있는 단전자 트랜지스터개발에 대한 획기적인 새로운 방법을 제시하여 상용화된 단전자 트랜지스터 개발의 촉진제 역할을 할 것으로 사료된다.From the success of manufacturing single-electron tunnel diodes that can operate at room temperature using the focused ion beam nanoparticle process, we have shown a breakthrough new method for the development of single-electron transistors that can be used as the next-generation ultra-high-density memory devices. It is believed to be.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100352579B1 (en) * | 2000-02-28 | 2002-09-12 | 김태환 | Methods of Lithography and Nanocrystalline Formation in situ by Using the Focused Ion Beam. |
| KR100907241B1 (en) * | 2007-07-12 | 2009-07-10 | 한국원자력연구원 | A method for controling the operation mode of nano-wire transistor using proton beam |
-
1999
- 1999-09-06 KR KR1019990037745A patent/KR20010026433A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100352579B1 (en) * | 2000-02-28 | 2002-09-12 | 김태환 | Methods of Lithography and Nanocrystalline Formation in situ by Using the Focused Ion Beam. |
| KR100907241B1 (en) * | 2007-07-12 | 2009-07-10 | 한국원자력연구원 | A method for controling the operation mode of nano-wire transistor using proton beam |
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