KR20010008425A - Method for removing tungsten-residues of wafer - Google Patents
Method for removing tungsten-residues of wafer Download PDFInfo
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- KR20010008425A KR20010008425A KR1019980062497A KR19980062497A KR20010008425A KR 20010008425 A KR20010008425 A KR 20010008425A KR 1019980062497 A KR1019980062497 A KR 1019980062497A KR 19980062497 A KR19980062497 A KR 19980062497A KR 20010008425 A KR20010008425 A KR 20010008425A
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- South Korea
- Prior art keywords
- wafer
- tungsten
- residues
- lifting
- deposited
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 28
- 239000010937 tungsten Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 20
- 238000005530 etching Methods 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
본 발명은 텅스텐을 메탈층으로 적층한 웨이퍼에 관한 것으로서, 특히, 웨이퍼를 써셉터(Susceptor)의 리프팅핀에 고정하여서 챔버내에서 들어올린 후 웨이퍼의 저면으로부터 빽사이드에칭물질을 분사하여 웨이퍼의 베벨지역에 잔류된 텅스텐잔류물질을 제거하도록 하는 웨이퍼의 텅스텐잔류물질 제거방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer in which tungsten is laminated with a metal layer. In particular, the wafer is fixed to a lifting pin of a susceptor, lifted up in a chamber, and then a backside etching material is sprayed from the bottom of the wafer to bevel the wafer. The present invention relates to a method for removing tungsten residues from a wafer to remove residual tungsten residues from a region.
일반적으로, 웨이퍼에 메탈라인(Metal Line)은 다수의 층에 절연된 상태로 형성되어지며, 절연막을 적층한 후 식각으로 절연막에 콘택홀을 형성한 후 이 콘택홀내에 텅스텐등과 같은 메탈층을 적층하여서 식각으로 도전층으로 사용하도록 하였다.In general, a metal line is formed on a wafer in an insulated state in a plurality of layers, and after forming an insulating layer, a contact hole is formed in the insulating layer by etching and then a metal layer such as tungsten is formed in the contact hole. The laminate was used as an electrically conductive layer by etching.
이러한 메탈층은 웨이퍼의 절연막 상에 적층한 후에 챔버(Chamber)내에서 에치빽(Etch Back)공정으로 불필요한 부분에 존재하는 텅스텐을 제거하도록 한 후, 다양한 후속공정을 진행하게 된다.After the metal layer is deposited on the insulating film of the wafer, tungsten existing in the unnecessary portion is removed by an etch back process in a chamber, and then various subsequent processes are performed.
그런데, 상기한 바와 같이, 웨이퍼의 절연막 상에 텅스텐을 증착할 때 CVD장비를 사용하여 화학기상증착법(CVD; Chemical Vapor Deposition)으로 증착하게 되는 데, 이 장비를 사용하는 경우 도 1에 도시된 바와 같이, 웨이퍼(10)의 측면 저면부분을 지칭하는 베벨지역(Bevel Region)에 텅스텐잔류물질(17)이 제거되지 않은 상태로 잔류되므로 후속 텅스텐층 에치빽(Etch Back)공정 및 그 이후의 후속공정에서 파티클 소오스(Partical Source)로 작용하는 문제점을 지니고 있었다.However, as described above, when the tungsten is deposited on the insulating film of the wafer, it is deposited by chemical vapor deposition (CVD) using a CVD apparatus. Similarly, since the tungsten residual material 17 remains unremoved in the bevel region, which refers to the side bottom portion of the wafer 10, the subsequent tungsten layer etch back process and subsequent processes thereafter. Had a problem of acting as a particle source.
즉. 상기 웨이퍼(10)의 베벨지역(18)에 잔류된 텅스텐잔류물질(17)은 상층으로 공급되는 식각물질로 인하여 상부면에 있는 불필요한 텅스텐층을 제거되지만 베벨지역(18)은 측면 저면부분에 있으므로 쉽게 제거되지 않게 되어 이 후속공정에서 베쓰(Bath) 혹은 챔버(Chamber)의 오염원으로 작용하므로 웨이퍼의 특성을 저하시키는 문제점을 지니게 된다.In other words. The tungsten residual material 17 remaining in the bevel region 18 of the wafer 10 is removed from the tungsten layer on the upper surface due to the etching material supplied to the upper layer, but the bevel region 18 is located at the bottom side of the side surface. Since it is not easily removed, it acts as a contaminant of the bath or chamber in this subsequent process, and thus has a problem of deteriorating wafer characteristics.
본 발명의 목적은 웨이퍼의 상부면에 텅스텐층을 적층하면서 웨이퍼의 모서리 저면부분에 적층되어 있는 텅스텐잔류물질을 제거하기 위하여 웨이퍼를 써셉터(Susceptor)의 리프팅핀에 고정하여서 챔버내에서 들어 올린 후 웨이퍼의 저면으로부터 빽사이드에칭물질을 분사하여 웨이퍼의 베벨지역에 잔류된 텅스텐잔류물질을 제거하도록 하는 것이 목적이다.An object of the present invention is to raise the inside of the chamber by fixing the wafer to the lifting pin of the susceptor in order to remove the tungsten residual material deposited on the bottom edge of the wafer while laminating a tungsten layer on the upper surface of the wafer The purpose is to inject a backside etching material from the bottom surface of the wafer to remove tungsten residues remaining in the bevel area of the wafer.
도 1은 일반적인 웨이퍼에 메탈증착공정으로 텅스텐을 표면에 증착한 후 상태를 보인 도면이고,1 is a view showing a state after depositing tungsten on the surface by a metal deposition process on a typical wafer,
도 2는 본 발명에 따른 텅스텐잔류물질 제거방법을 보인 도면이다.2 is a view showing a method for removing tungsten residual material according to the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
10 : 웨이퍼 15 : 텅스텐층10 wafer 15 tungsten layer
17 : 텅스텐잔류물질 18 : 베벨지역17: Tungsten residue material 18: Bevel area
20 : 써섭터 25 : 리프팅핀20: susceptor 25: lifting pin
30 : 샤워헤드 40 : 빽사이드에칭물질30: shower head 40: backside etching material
이러한 목적은 웨이퍼 상에 화학기상증착법으로 텡스텐층을 적층하는 단계와; 상기 단계 후에 웨이퍼를 챔버 내에 설치된 써셉터의 리프팅핀에 고정시킨 후 리프팅핀을 상측으로 상승시키는 단계와; 상기 단계 후에 웨이퍼의 저면으로 부터 베벨지역에 증착된 팅스텐잔류물질을 SF6, 및 Ar의 혼합가스를 소오스가스로 사용하는 플라즈마를 이용하여 제거하도록 하는 단계와; 상기 단계 후에 웨이퍼를 지지하는 리프팅핀을 하측으로 이동시켜 원상태로 복귀시킨 후 플라즈마로 에칭하여 웨이퍼에 증착된 텅스텐층을 식각하는 단계를 포함하여 이루어진 반도체소자의 잔류물질 제거방법을 제공함으로써 달성된다.This object comprises the steps of laminating a tungsten layer on the wafer by chemical vapor deposition; After the step of fixing the wafer to the lifting pin of the susceptor installed in the chamber and lifting the lifting pin upwards; Removing the tinting residue material deposited at the bevel region from the bottom of the wafer after the step by using a plasma using a mixture gas of SF 6 and Ar as a source gas; After the above step is achieved by providing a method for removing the residual material of the semiconductor device comprising the step of moving the lifting pin supporting the wafer downward to return to the original state and then etching with plasma to etch the tungsten layer deposited on the wafer.
그리고, 상기 웨이퍼의 텅스텐잔류물질을 제거할 때 플라즈마를 이용하도록 하고, 200 ∼ 300W의 파워로 5 ∼ 20초 동안 진행하도록 한다.Then, the plasma is used to remove the tungsten residual material of the wafer, and proceed for 5 to 20 seconds at a power of 200 to 300W.
이하, 첨부한 도면을 참조하여 본 발명의 바람직한 일실시예에 대해 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
도 1은 일반적인 웨이퍼에 메탈증착공정으로 텅스텐을 표면에 증착한 후 상태를 보인 도면이고, 도 2는 본 발명에 따른 텅스텐잔류물질 제거방법을 보인 도면이다.1 is a view showing a state after depositing tungsten on the surface by a metal deposition process on a typical wafer, Figure 2 is a view showing a method for removing the residual tungsten material according to the present invention.
도 1에 도시된 바와 같이, 웨이퍼(10) 상에 화학기상증착법으로 텡스텐층(15)을 적층하도록 한다.As shown in FIG. 1, the tungsten layer 15 is laminated on the wafer 10 by chemical vapor deposition.
그리고, 도 2에 도시된 바와 같이, 상기 단계 후에 웨이퍼(10)를 챔버 내에 설치된 써셉터(20)의 리프팅핀(25)에 고정시킨 후 리프팅핀(25)을 상측으로 상승시키도록 한다.As shown in FIG. 2, after the step 10, the wafer 10 is fixed to the lifting pin 25 of the susceptor 20 installed in the chamber, and then the lifting pin 25 is raised upward.
그리고, 상기 단계 후에 웨이퍼(10)의 저면으로 부터 베벨지역(18)에 증착된 팅스텐잔류물질(17)을 SF6, 및 Ar의 혼합가스를 화살표로 표시된 바와 같이, 공급하여 제거하도록 한다.Then, after the step, the Tingsten residual material 17 deposited in the bevel region 18 from the bottom of the wafer 10 is supplied and removed, as indicated by the arrows, of the mixed gas of SF 6 and Ar.
이때, 상기 웨이퍼(10)의 텅스텐잔류물질(17)을 제거할 때 플라즈마를 이용하도록 하고, 200 ∼ 300W의 파워로 5 ∼ 20초 동안 진행하는 것이 바람직하다.At this time, the plasma is used to remove the tungsten residual material 17 of the wafer 10, and it is preferable to proceed for 5 to 20 seconds at a power of 200 to 300W.
그리고, 상기 단계 후에 웨이퍼(10)를 지지하는 리프팅핀(25)을 하측으로 이동시켜 원상태로 복귀시킨 후 플라즈마로 에칭하여 웨이퍼(10)에 증착된 텅스텐층(15)을 식각하도록 한다.After the above step, the lifting pin 25 supporting the wafer 10 is moved downward to return to the original state and then etched by plasma to etch the tungsten layer 15 deposited on the wafer 10.
상기한 바와 같이, 본 발명에 따른 웨이퍼의 텅스턴잔류물질 제거방법을 이용하게 되면, 웨이퍼의 상부면에 텅스텐층을 적층하면서 웨이퍼의 모서리 저면부분에 적층되어 있는 텅스텐잔류물질을 제거하기 위하여 웨이퍼를 써셉터(Susceptor)의 리프팅핀에 고정하여서 챔버내에서 들어 올린 후 웨이퍼의 저면으로 부터 빽사이드에칭물질을 분사하여 웨이퍼의 베벨지역에 잔류된 텅스텐잔류물질을 제거하므로 파티클 소오스를 제거할 뿐만아니라 챔버의 오염을 방지하도록 하는 매우 유용하고 효과적인 발명이다.As described above, when the tungsten residual material removal method of the wafer according to the present invention is used, the wafer is removed to remove the tungsten residual material deposited on the bottom edge of the wafer while the tungsten layer is laminated on the upper surface of the wafer. It is fixed to the lifting pin of the susceptor, lifted up in the chamber and sprayed backside etching material from the bottom of the wafer to remove the tungsten residues remaining in the bevel area of the wafer. It is a very useful and effective invention to prevent contamination of the.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980062497A KR20010008425A (en) | 1998-12-30 | 1998-12-30 | Method for removing tungsten-residues of wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019980062497A KR20010008425A (en) | 1998-12-30 | 1998-12-30 | Method for removing tungsten-residues of wafer |
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| KR20010008425A true KR20010008425A (en) | 2001-02-05 |
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| KR1019980062497A KR20010008425A (en) | 1998-12-30 | 1998-12-30 | Method for removing tungsten-residues of wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100770535B1 (en) * | 2005-12-28 | 2007-10-25 | 동부일렉트로닉스 주식회사 | Manufacturing method of semiconductor device |
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1998
- 1998-12-30 KR KR1019980062497A patent/KR20010008425A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100770535B1 (en) * | 2005-12-28 | 2007-10-25 | 동부일렉트로닉스 주식회사 | Manufacturing method of semiconductor device |
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