KR20010003045A - Method for manufacturing organic field emission display device - Google Patents

Method for manufacturing organic field emission display device Download PDF

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Publication number
KR20010003045A
KR20010003045A KR1019990023176A KR19990023176A KR20010003045A KR 20010003045 A KR20010003045 A KR 20010003045A KR 1019990023176 A KR1019990023176 A KR 1019990023176A KR 19990023176 A KR19990023176 A KR 19990023176A KR 20010003045 A KR20010003045 A KR 20010003045A
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thin film
surface treatment
transparent material
display device
organic
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KR1019990023176A
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Korean (ko)
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KR100345068B1 (en
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주성후
이주현
김우영
이원건
김선웅
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김영환
현대전자산업 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/361—Temperature

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE: A method for manufacturing an organic EL is provided to improve the interfacial adhesive force at an upper layer by rapidly carrying out the surface treatment of ITO thin film. CONSTITUTION: A method for manufacturing an organic EL comprises the step of depositing transparent material on a transparent substrate(20). The transparent material formed on the transparent substrate(20) is an anode electrode(21) having the superior electric conductivity and light transmissivity. Then, the surface of the transparent material(21) is chemically etched. The etching process is carried out by using HCI, HNO3, HF, CH3COOH, H2PO4. Alternatively, the etching process can be carried out by using an acid mixture or a dilute solution.

Description

유기 전계발광 표시소자의 제조방법{Method for manufacturing organic field emission display device}Method for manufacturing organic electroluminescent display device {Method for manufacturing organic field emission display device}

본 발명은 유기 전계발광 표시소자의 제조방법에 관한 것으로, 특히 유기 전계발광 표시소자의 양극전극 표면처리방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an organic electroluminescent display device, and more particularly, to a method for treating an anode electrode surface of an organic electroluminescent display device.

유기전계발광표시소자(Organic field emission display device)는 휴대용 단말기, CNS(Car Navigation System), 게임기의 표시판, 노트북 및 벽걸이 텔레비젼에 사용되는 차세대 영상 표시장치이다.Organic field emission display devices are the next generation image display devices used in portable terminals, car navigation systems (CNS), display panels of game machines, laptops, and wall-mounted televisions.

도 1은 종래의 유기전계발광 표시소자를 나타낸 도면으로서, 도 1에 도시된 바와 같이, 유리와 같은 투명기판(10) 상에 양극전극(11)과 음극전극(13)이 유기박막층(12)의 개재하에 서로 대향하여 배치되어, 양극전극(11)과 음극전극(13) 사이에 가해지는 전압(V)에 의하여 유기박막층(12)에서 빛이 발광하여 투과한다. 양극전극(11)은 정공(hole)을 공급하여 주는 역할을 하며, 음극전극(13)은 전자를 공급하여 주는 역할을 한다. 또한, 유기박막층(12)은 정공수송층(12A), 발광층(12B) 및 전자수송층(12C)을 포함한다.1 is a view illustrating a conventional organic light emitting display device, and as shown in FIG. 1, an anode electrode 11 and a cathode electrode 13 are formed on an organic thin film layer 12 on a transparent substrate 10 such as glass. Are disposed to face each other under the interposition of the light, and light is emitted and transmitted through the organic thin film layer 12 by the voltage V applied between the anode electrode 11 and the cathode electrode 13. The anode electrode 11 serves to supply holes, and the cathode electrode 13 serves to supply electrons. In addition, the organic thin film layer 12 includes a hole transport layer 12A, a light emitting layer 12B, and an electron transport layer 12C.

상기한 구성으로 된 유기전계발광 표시소자는, 양극전극(11)에 (＋) 전압이 인가되고, 음극전극(13)에 (－) 전압이 인가되면, 양극전극(11)으로 정공이 주입되고, 음극전극(13)으로 전자가 주입되어 유기박막층(12) 내에서 전자와 정공의 재결합에 의하여 빛이 발하게 된다.In the organic light emitting display device having the above-described configuration, when a positive voltage is applied to the positive electrode 11 and a negative voltage is applied to the negative electrode 13, holes are injected into the positive electrode 11. Electrons are injected into the cathode electrode 13 to emit light by recombination of electrons and holes in the organic thin film layer 12.

한편, 양극전극(11)은 유기박막층(12)에서 발광된 빛이 투과되도록 빛의 투과도 및 전기 전도성이 우수한 ITO 박막을 스퍼터링 방법으로 형성한다. 또한, 음극전극(13)은 전자를 원활하게 공급하기 위하여 일함수가 낮은 금속으로 형성한다.Meanwhile, the anode electrode 11 forms an ITO thin film having excellent light transmittance and electrical conductivity so as to transmit light emitted from the organic thin film layer 12 by a sputtering method. In addition, the cathode electrode 13 is formed of a metal having a low work function to smoothly supply electrons.

그러나, 상기한 방법에 의해 형성된 ITO 박막은 균일도와 표면 거칠기가 동일하지 않게 되어 각 부위의 발광휘도가 다르게 나타날 뿐만 아니라, 화소의 일부가 발광하지 않는 다크 스팟(dark spot)이 형성되는 문제가 발생한다.However, the ITO thin film formed by the above-described method does not have the same uniformity and surface roughness, so that the luminance of each part is different from each other, and a dark spot is formed in which a part of the pixel does not emit light. do.

또한, 이러한 열악한 표면 거칠기에 의해 상부층인 유기박막층(12)과의 계면 접착성이 우수하지 못하여 소자가 불안정해진다.In addition, due to such poor surface roughness, the interface adhesion with the organic thin film layer 12 as the upper layer is not excellent, and the device becomes unstable.

이에 대하여, 종래에는 ITO 박막의 형성 후 O2, Ar등의 플라즈마를 이용한 건식식각으로 ITO 박막의 표면처리를 진행함으로써, 그의 표면 거칠기를 개선하였다. 그러나, 이러한 건식식각을 이용한 표면처리 방법은 진공챔버에서 이루어져야 하기 때문에, 플라즈마 식각용 장비의 설치비용이 높고 설치공간확보가 용이하지 못할 뿐만 아니라 공정시간이 긴 단점이 있다.In contrast, conventionally, after the formation of the ITO thin film, the surface roughness of the ITO thin film was improved by dry etching using plasma such as O 2 or Ar, thereby improving its surface roughness. However, since the surface treatment method using the dry etching is to be made in the vacuum chamber, there is a disadvantage that the installation cost of the equipment for plasma etching is high, the installation space is not easy, and the process time is long.

따라서, 본 발명은 상기한 종래의 문제점을 해결하기 위한 것으로서, 진공챔버를 이용하는 것 없이 비교전 단시간 내에 ITO 박막의 표면처리를 진행하여 화소에서의 균일한 발광휘도를 얻으면서 상부층과의 계면 접착성을 향상시킬 수 있는 유기 전계발광 표시소자의 제조방법을 제공하는 것이다.Accordingly, the present invention is to solve the above-mentioned problems, the surface treatment of the ITO thin film in a short time before the comparison without using a vacuum chamber to obtain a uniform emission luminance in the pixel, while interfacial adhesion with the upper layer It is to provide a method of manufacturing an organic electroluminescent display device that can improve the.

도 1은 종래의 유기전계발광 표시소자를 나타낸 단면도.1 is a cross-sectional view showing a conventional organic light emitting display device.

도 2는 본 발명의 실시예에 따른 유기 전계발광 표시소자의 양극전극 표면처리 방법을 설명하기 위한 단면도.2 is a cross-sectional view illustrating a method of treating a surface of an anode electrode of an organic light emitting display device according to an exemplary embodiment of the present invention.

도 3a 및 도 3b는 표면처리를 진행하기 전의 ITO 박막의 표면을 나타낸 평면도 및 사시도.3A and 3B are a plan view and a perspective view showing the surface of the ITO thin film before the surface treatment is performed.

도 4a 및 도 4b는 표면처리를 진행한 후의 ITO 박막의 표면을 나타낸 평면도 및 사시도.4A and 4B are a plan view and a perspective view showing the surface of the ITO thin film after the surface treatment.

도 5는 표면처리를 진행하기 전의 ITO 박막을 이용하여 제작한 유기 전계발광 표시소자①와 표면처리를 진행한 후의 ITO 박막을 이용하여 제작한 유기 전계발광 표시소자②의 전압에 따른 전류밀도를 나타낸 그래프.5 shows the current density according to the voltage of the organic electroluminescent display device ① fabricated using the ITO thin film before the surface treatment and the organic electroluminescent display device ② fabricated using the ITO thin film after the surface treatment. graph.

(도면의 주요부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)

10, 20 : 투명기판 11, 21 : 양극전극10, 20: transparent substrate 11, 21: anode electrode

12 : 유기박막층 12A : 정공수송층12: organic thin film layer 12A: hole transport layer

12B : 발광층 12C : 전자수송층12B: light emitting layer 12C: electron transport layer

13 : 음극전극13: cathode electrode

상기한 본 발명의 목적을 달성하기 위하여, 본 발명에 따른 유기 전계발광 표시소자의 제조방법은 투명기판 상에 양극전극 물질로서 빛이 투과도 및 전기 전도성이 우수한 투명물질을 증착하는 단계; 및 투명물질을 화학적 식각으로 표면처리하는 단계를 포함하고, 표면처리는 HCl, HNO3, HF, CH3COOH, H2PO4와 같은 산과, 이러한 산의 혼합물 또는 묽은용액등을 사용하여 진행한다.In order to achieve the above object of the present invention, a method of manufacturing an organic electroluminescent display device according to the present invention comprises the steps of depositing a transparent material having excellent light transmittance and electrical conductivity as a positive electrode material on a transparent substrate; And surface treating the transparent material by chemical etching, and the surface treatment is performed using an acid such as HCl, HNO 3 , HF, CH 3 COOH, H 2 PO 4 , a mixture of these acids, or a dilute solution. .

본 실시예에서, 투명물질은 ITO(In2O3:Sn) 박막 또는 SnO2 : Sb등을 포함한 물질로 형성한다. 또한, 표면처리는 -100 내지 200℃의 온도범위로 조절하여 진행한다. 또한, 표면처리는 투명물질의 두께가 30 내지 300nm가 되도록 조절하여 진행한다.In the present embodiment, the transparent material is formed of a material including an ITO (In 2 O 3 : Sn) thin film or SnO 2: Sb. In addition, the surface treatment is carried out by adjusting to a temperature range of -100 to 200 ℃. In addition, the surface treatment is carried out by adjusting the thickness of the transparent material to 30 to 300nm.

이하, 첨부된 도면을 참조하여 본 발명의 실시예를 설명한다.Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention.

도 2는 본 발명의 실시예에 따른 유기 전계발광 표시소자의 양극전극 표면처리 방법을 설명하기 위한 단면도이고, 도 3a 및 도 3b는 표면처리를 진행하기 전의 ITO 박막의 표면을 나타낸 평면도 및 사시도이고, 도 4a 및 도 4b는 ITO 박막의 표면처리를 진행한 후의 평면도 및 사시도이다.2 is a cross-sectional view illustrating a method of treating a surface of an anode electrode of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIGS. 3A and 3B are plan and perspective views illustrating a surface of an ITO thin film before surface treatment is performed. 4A and 4B are a plan view and a perspective view after performing a surface treatment of an ITO thin film.

도 2를 참조하면, 유리와 같은 투명기판(20) 상에 양극전극(21) 물질로서 빛이 투과도 및 전기 전도성이 우수한 투명물질로서 ITO(In2O3:Sn) 박막을 스퍼터링 방식으로 증착한다. 이때, 도 3a 및 도 3b에 도시된 바와 같이, ITO 박막의 표면 거칠기가 우수하지 못함을 알 수 있다. 또한, ITO 박막 대신에 SnO2 : Sb등을 포함한 전도성이 우수하고 투명한 물질을 사용할 수 있다.Referring to FIG. 2, an ITO (In 2 O 3 : Sn) thin film is deposited on a transparent substrate 20 such as glass as a transparent material having excellent light transmittance and electrical conductivity as a material of the anode electrode 21. . At this time, as shown in Figure 3a and 3b, it can be seen that the surface roughness of the ITO thin film is not excellent. In addition, instead of the ITO thin film, it is possible to use a highly conductive and transparent material including SnO 2: Sb.

이러한 표면거칠기를 개선하기 위하여, 상기 ITO 박막을 HCl, HNO3, HF, CH3COOH, H2PO4와 같은 산과 이러한 산의 혼합물 또는 묽은용액등을 사용한 화학적 식각으로 표면처리한다.In order to improve the surface roughness, the ITO thin film is surface treated by chemical etching using an acid such as HCl, HNO 3 , HF, CH 3 COOH, H 2 PO 4 , a mixture of these acids, or a dilute solution.

바람직하게, ITO 박막의 표면처리시, 표면처리 온도를 -100 내지 200℃의 범위로 조절하여 진행한다. 또한, 표면 처리후의 ITO 박막의 두께를 30 내지 300nm가 되도록 조절한다.Preferably, during the surface treatment of the ITO thin film, the surface treatment temperature is controlled by adjusting in the range of -100 to 200 ° C. In addition, the thickness of the ITO thin film after surface treatment is adjusted to be 30-300 nm.

예컨대, 도 4a 및 도 4b는 ITO 박막을 30%의 HCl 용액을 이용하여 30초 동안 화학적 식각으로 표면처리를 진행한 경우를 나타낸 도면으로서, 도 4a 및 도 4b에 도시된 바와 같이, 화학적 표면처리의 진행 후 ITO 박막의 표면 거칠기가 개선됨을 알 수 있다.For example, FIGS. 4A and 4B illustrate a case where the ITO thin film is surface treated by chemical etching for 30 seconds using 30% HCl solution. As shown in FIGS. 4A and 4B, the chemical surface treatment is performed. It can be seen that after the progress of the surface roughness of the ITO thin film is improved.

한편, 도 5는 표면처리를 진행하기 전의 ITO 박막을 이용하여 제작한 유기 전계발광 표시소자①와 상기한 화학적 표면처리를 진행한 후의 ITO 박막을 이용하여 제작한 유기 전계발광 표시소자②의 전압에 따른 전류밀도를 나타낸 그래프이다.5 shows the voltages of the organic electroluminescent display device ① fabricated using the ITO thin film before the surface treatment and the organic electroluminescent display device ② fabricated using the ITO thin film after the chemical surface treatment. It is a graph showing the current density according to.

도 5에 도시된 바와 같이, 화학적 표면처리를 진행한 후의 ITO 박막을 이용하여 제작한 유기 전계발광 표시소자②의 경우에, 인가되는 전압이 증가함에 따라 전류량이 급격히 증가함을 알 수 있다. 즉, ITO 박막이 화학적 표면처리에 의해 표면거칠기가 개선되고 전자의 주입특성이 향상된다. 또한, 유기 전계발광 표시소자는 전류의 양에 비례하여 소자에서 발과되는 빛의 휘도가 변화되기 때문에, ITO 박막의 표면처리에 의해 낮은 인가전압에서도 빛을 발하게 되어 소자의 구동전압이 낮아짐을 알 수 있다. 또한, 도 5의 그래프에서 알수 있는 바와 같이, 동일한 전압이 인가되는 경우, 보다 더 많은 양의 전류가 흐르기 때문에, 소자의 발광휘도가 향상된다.As shown in FIG. 5, in the case of the organic electroluminescent display device ② manufactured by using the ITO thin film after chemical surface treatment, it can be seen that the amount of current rapidly increases as the applied voltage increases. That is, the surface roughness of the ITO thin film is improved by chemical surface treatment and the electron injection characteristics are improved. In addition, since the luminance of light emitted from the device changes in proportion to the amount of current, the organic electroluminescent display device emits light even at a low applied voltage due to the surface treatment of the ITO thin film, thereby lowering the driving voltage of the device. Can be. Further, as can be seen in the graph of Fig. 5, when the same voltage is applied, a larger amount of current flows, so that the luminous luminance of the device is improved.

상기한 본 발명에 의하면, 비교적 단순한 화학적 방법으로 양극전극물질인 ITO 박막을 표면처리함으로써, 공정시간이 감소될 뿐만 아니라, 진공장비가 요구되지 않기 때문에 제조비용 및 공간확보등의 문제를 해결할 수 있다.According to the present invention described above, by treating the surface of the ITO thin film, which is a cathode electrode material, by a relatively simple chemical method, not only the processing time is reduced but also the vacuum equipment is not required, and thus problems such as manufacturing cost and space can be solved. .

또한, 양극전극의 표면 거칠기가 개선되어, 상부층과의 계면접착성이 향상되어 소자의 안정화가 이루어질 뿐만 아니라, 전자의 주입이 균일해지고 표면의 다크 스팟등이 제거되어 발광의 균일도가 향상됨으로써, 결국 소자의 표시특성이 향상된다.In addition, the surface roughness of the anode electrode is improved, and the interface adhesion with the upper layer is improved, thereby stabilizing the device, as well as the injection of electrons and the removal of dark spots on the surface, thereby improving the uniformity of light emission. The display characteristics of the device are improved.

또한, 본 발명은 상기 실시예에 한정되지 않고, 본 발명의 기술적 요지를 벗어나지 않는 범위내에서 다양하게 변형시켜 실시할 수 있다.In addition, this invention is not limited to the said Example, It can variously deform and implement within the range which does not deviate from the technical summary of this invention.

Claims (5)

투명기판 상에 양극전극 물질로서 빛이 투과도 및 전기 전도성이 우수한 투명물질을 증착하는 단계; 및,Depositing a transparent material having excellent light transmittance and electrical conductivity as an anode electrode material on the transparent substrate; And, 상기 투명물질을 화학적 식각으로 표면처리하는 단계를 포함하고,Surface treating the transparent material by chemical etching; 상기 표면처리는 HCl, HNO3, HF, CH3COOH, H2PO4와 같은 산과, 이러한 산의 혼합물 또는 묽은용액등을 사용하여 진행하는 것을 특징으로 하는 유기 전계발광 표시소자의 제조방법.The surface treatment is performed using an acid such as HCl, HNO 3 , HF, CH 3 COOH, H 2 PO 4 , a mixture of these acids, or a dilute solution. 제 1 항에 있어서, 상기 투명물질은 ITO(In2O3:Sn) 박막으로 형성하는 것을 특징으로 하는 유기 전계발광 표시소자의 제조방법.The method of claim 1, wherein the transparent material is formed of an ITO (In 2 O 3 : Sn) thin film. 제 1 항에 있어서, 상기 투명물질은 SnO2 : Sb등을 포함한 물질로 형성하는 것을 특징으로 하는 유기 전계발광 표시소자의 제조방법.The method of claim 1, wherein the transparent material is formed of a material including SnO 2: Sb. 제 1 항에 있어서, 상기 표면처리는 -100 내지 200℃의 온도범위로 조절하여 진행하는 것을 특징으로 하는 유기 전계발광 표시소자의 제조방법.The method of claim 1, wherein the surface treatment is performed by adjusting the temperature in a range of −100 to 200 ° C. 6. 제 4 항에 있어서, 상기 표면처리는 상기 투명물질의 두께가 30 내지 300nm가 되도록 조절하여 진행하는 것을 특징으로 하는 유기 전계발광 표시소자의 제조방법.5. The method of claim 4, wherein the surface treatment is performed by adjusting the thickness of the transparent material to be 30 to 300 nm.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100500269B1 (en) * 2001-11-01 2005-07-11 조수제 Cover plate for organic electroluminescence device and the method of its fabrication
KR100504536B1 (en) * 2002-03-29 2005-08-04 엘지.필립스 엘시디 주식회사 Method for Manufacturing Liquid Crystal Display devices
KR100765728B1 (en) * 2006-03-31 2007-10-11 성균관대학교산학협력단 Surface treatment method of ito using oxygen plasma and thermal treatment and oled device using the same method
KR100843386B1 (en) * 2007-04-12 2008-07-03 비오이 하이디스 테크놀로지 주식회사 A method for fabricating liquid crystal display device

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JPH01175118A (en) * 1987-12-28 1989-07-11 Central Glass Co Ltd Formation of transparent conducting film
JP4164150B2 (en) * 1998-03-31 2008-10-08 キヤノン株式会社 Method for producing optical functional thin film

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100500269B1 (en) * 2001-11-01 2005-07-11 조수제 Cover plate for organic electroluminescence device and the method of its fabrication
KR100504536B1 (en) * 2002-03-29 2005-08-04 엘지.필립스 엘시디 주식회사 Method for Manufacturing Liquid Crystal Display devices
KR100765728B1 (en) * 2006-03-31 2007-10-11 성균관대학교산학협력단 Surface treatment method of ito using oxygen plasma and thermal treatment and oled device using the same method
KR100843386B1 (en) * 2007-04-12 2008-07-03 비오이 하이디스 테크놀로지 주식회사 A method for fabricating liquid crystal display device
US7718329B2 (en) 2007-04-12 2010-05-18 Hydis Technologies Co., Ltd. Method of fabricating liquid crystal display device

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