CN109638176A - The production method and oled substrate of oled substrate - Google Patents
The production method and oled substrate of oled substrate Download PDFInfo
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- CN109638176A CN109638176A CN201811544627.8A CN201811544627A CN109638176A CN 109638176 A CN109638176 A CN 109638176A CN 201811544627 A CN201811544627 A CN 201811544627A CN 109638176 A CN109638176 A CN 109638176A
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- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 73
- 238000001039 wet etching Methods 0.000 claims abstract description 23
- 230000003746 surface roughness Effects 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 claims 1
- 229960002050 hydrofluoric acid Drugs 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 4
- 229920001621 AMOLED Polymers 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000027756 respiratory electron transport chain Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides the production method and oled substrate of a kind of oled substrate.The production method of the oled substrate on TFT layer by forming one layer of electrode thin film layer, wet etching is carried out to the electrode thin film layer first, reduce the surface roughness of the electrode thin film layer, patterned process is carried out to the electrode thin film layer again and obtains pixel electrode, improve the flatness of pixel electrode, a possibility that reducing point discharge, reducing OLED failure, improves the reliability of OLED.
Description
Technical field
The present invention relates to field of display technology more particularly to the production methods and oled substrate of a kind of oled substrate.
Background technique
Organic LED display device (Organic Light Emitting Display, OLED) has spontaneous
Light, driving voltage are low, luminous efficiency is high, the response time is short, clarity and contrast are high, nearly 180 ° of visual angles, use temperature ranges
Width is known as being the display for most having development potentiality by industry, it can be achieved that many advantages, such as Flexible Displays are with large area total colouring
Device.
OLED device generally includes: substrate, the hole injection layer on anode, is set to sky at the anode on substrate
Hole transmission layer on the implanted layer of cave, the luminous material layer on hole transmission layer, the electronics on luminous material layer pass
Defeated layer, the electron injecting layer on electron transfer layer and the cathode on electron injecting layer.The principle of luminosity of OLED device
It is semiconductor material and luminous organic material under electric field driven, passes through carrier injection and composite guide photoluminescence.Specifically,
OLED device generallys use tin indium oxide (ITO) electrode and metal electrode respectively as the anode and cathode of device, in certain electricity
Under pressure driving, electrons and holes are injected into electron transfer layer and hole transmission layer, electrons and holes point from cathode and anode respectively
Not Jing Guo electron transfer layer and hole transmission layer move to luminous material layer, and meet in luminous material layer, form exciton simultaneously
Excite light emitting molecule, the latter issues visible light by radiative relaxation.
OLED according to driving method can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and
Active array type OLED (Active Matrix OLED, AMOLED) two major classes, i.e. directly addressing and film transistor matrix are sought
Two class of location.Wherein, AMOLED has the pixel in array arrangement, belongs to active display type, and luminous efficacy is high, is typically used as
Large scale display device high-definition.
There are many reason of OLED device fail, and one of which is that the flatness of oled substrate is bad, is made on oled substrate
There is abnormal protrusion, these abnormal protrusions be easy to cause point discharge and lead to OLED device electric leakage or short circuit, thus generate
Non-luminous region, while because the Joule heat that high current density generates at this easily leads to organic material denaturation, organic material stratum boundary
Face mixing and interface fall off and generate dim spot.For example, the driving voltage V of common white light OLED is about 12.5V, anode and cathode
Between thicknesses of layers d=2500A=2.5X10-7M, then voltage density ξ=V/d=5X10 in OLED device7V/m。
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of oled substrate, and the flatness of pixel electrode can be improved,
A possibility that reducing point discharge, reducing OLED failure, improves the reliability of OLED.
The object of the invention is also to provide a kind of oled substrate, the flatness of pixel electrode is high, reduces point discharge,
OLED high reliablity.
To achieve the above object, the present invention provides a kind of production method of oled substrate, include the following steps:
Step S1, underlay substrate is provided, forms TFT layer on the underlay substrate；
Step S2, one layer of electrode thin film layer is formed on the TFT layer, and wet etching is carried out to drop to the electrode thin film layer
The surface roughness of the low electrode thin film layer；
Step S3, patterned process is carried out to the electrode thin film layer and obtains pixel electrode.
In the step S2, wet etching is carried out to the electrode thin film layer using hydrochloric acid, hydrofluoric acid or potassium hydroxide solution.
In the step S2, before carrying out wet etching to the electrode thin film layer, the thickness of the electrode thin film layer is big
In the thickness of the pixel electrode.
The difference of the thickness of the thickness of the electrode thin film layer and the pixel electrode is 10-500A.
The TFT layer includes that the grid of the grid being set on the underlay substrate, the covering underlay substrate and grid is exhausted
Edge layer, is set on the active layer and connect respectively with the active layer both ends active layer on the gate insulating layer
Source electrode and drain electrode and the covering gate insulating layer, active layer, the passivation layer in source electrode and drain electrode.
The via hole and drain contact that the pixel electrode runs through passivation layer by one.
The material of the electrode thin film layer is the combination of one or both of ITO and Ag.
In the step S2, to the electrode thin film layer carry out wet etching and reduce with a thickness of 10-500A.
The present invention also provides a kind of oled substrates, comprising: underlay substrate, the TFT layer on the underlay substrate and
Pixel electrode on the TFT layer；
By forming one layer of electrode thin film layer on the TFT layer, wet etching is carried out to reduce to the electrode thin film layer
The surface roughness of the electrode thin film layer, then patterned process is carried out to the electrode thin film layer and obtains the pixel electrode.
The TFT layer includes that the grid of the grid being set on the underlay substrate, the covering underlay substrate and grid is exhausted
Edge layer, is set on the active layer and connect respectively with the active layer both ends active layer on the gate insulating layer
Source electrode and drain electrode and the covering gate insulating layer, active layer, the passivation layer in source electrode and drain electrode；
The via hole and drain contact that the pixel electrode runs through passivation layer by one；
The material of the electrode thin film layer is the combination of one or both of ITO and Ag.
Beneficial effects of the present invention: the production method of oled substrate of the invention on TFT layer by forming one layer of electrode
Film layer carries out wet etching to the electrode thin film layer first, reduces the surface roughness of the electrode thin film layer, then to the electricity
Very thin film layer carries out patterned process and obtains pixel electrode, improves the flatness of pixel electrode, reduces point discharge, reduces OLED
A possibility that failure, improves the reliability of OLED.The flatness of oled substrate of the invention, pixel electrode is high, reduces tip and puts
Electricity reduces a possibility that OLED fails, the high reliablity of OLED.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the flow chart of the production method of oled substrate of the invention；
Fig. 2 is the schematic diagram of the production method step S1 of oled substrate of the invention；
Fig. 3 is the schematic diagram of the production method step S2 of oled substrate of the invention；
Fig. 4 is the signal of the schematic diagram and oled substrate of the invention of the production method step S3 of oled substrate of the invention
Figure.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the present invention provides a kind of production method of oled substrate, include the following steps:
Step S1, referring to Fig. 2, providing underlay substrate 10, TFT layer 20 is formed on the underlay substrate 10；
Step S2, referring to Fig. 3, one layer of electrode thin film layer 30 is formed on the TFT layer 20, to the electrode thin film layer
30 carry out wet etchings to reduce the surface roughness of the electrode thin film layer 30；
Step S3, referring to Fig. 4, carrying out patterned process to the electrode thin film layer 30 obtains pixel electrode 40.
It should be noted that the present invention on TFT layer 20 by forming one layer of electrode thin film layer 30, it is thin to the electrode first
Film layer 30 carries out wet etching, reduces the surface roughness of the electrode thin film layer 30, then carry out figure to the electrode thin film layer 30
Case handles to obtain pixel electrode 40, improves the flatness of pixel electrode 40, reduces point discharge, reduces the possibility of OLED failure
Property, improve the reliability of OLED.
Specifically, in the step S2, using hydrochloric acid (HCL), hydrofluoric acid (HF) or potassium hydroxide (KOH) solution to described
Electrode thin film layer 30 carries out wet etching.
Specifically, in the step S2, before carrying out wet etching to the electrode thin film layer 30, the electrode thin film layer
30 thickness is greater than the thickness of the pixel electrode 40.The namely appropriate thickness for increasing electrode thin film layer 30 of the present invention, is protected
Card carries out wet etching to electrode thin film layer 30, reduces the surface roughness of the electrode thin film layer 30 later without keeping electrode thin
Film layer 30 disconnects.
Further, the difference of the thickness of the thickness and pixel electrode 40 of the electrode thin film layer 30 is 10-500A, when
It can also be so adjusted, and ensured below film layer crystallization thickness with processing method according to practical film layer.
Specifically, the TFT layer 20 includes grid 21, the covering underlay substrate 10 on the underlay substrate 10
And it the gate insulating layer 22 of grid 21, the active layer 23 on the gate insulating layer 22, is set on the active layer 23 simultaneously
The source electrode 24 that is connect respectively with 23 both ends of active layer and drain electrode 25 and the covering gate insulating layer 22, active layer 23,
Passivation layer 26 on source electrode 24 and drain electrode 25.
Specifically, the via hole 261 that the pixel electrode 40 runs through passivation layer 26 by one is contacted with drain electrode 25.
Specifically, the material of the electrode thin film layer 30 is one or both of ITO (tin indium oxide) and Ag's (silver)
Combination.
Specifically, in the step S2, wet etching is carried out to the electrode thin film layer 30 and reduce with a thickness of 10-
500A。
Referring to Fig. 4, the production method based on above-mentioned oled substrate, the present invention also provides a kind of oled substrates, comprising: lining
Substrate 10, the TFT layer 20 on the underlay substrate 10 and the pixel electrode 40 on the TFT layer 20；
By forming one layer of electrode thin film layer 30 on the TFT layer 20, wet etching is carried out to the electrode thin film layer 30
To reduce the surface roughness of the electrode thin film layer 30, then the electrode thin film layer 30 progress patterned process is obtained described
Pixel electrode 40.
It should be noted that the present invention on TFT layer 20 by forming one layer of electrode thin film layer 30, it is thin to the electrode first
Film layer 30 carries out wet etching, reduces the surface roughness of the electrode thin film layer 30, then carry out figure to the electrode thin film layer 30
Case handles to obtain pixel electrode 40, improves the flatness of pixel electrode 40, reduces point discharge, reduces the possibility of OLED failure
Property, improve the reliability of OLED.
Specifically, carrying out wet etching to the electrode thin film layer 30 using hydrochloric acid, hydrofluoric acid or potassium hydroxide solution.
Specifically, the thickness of the electrode thin film layer 30 is greater than before carrying out wet etching to the electrode thin film layer 30
The thickness of the pixel electrode 40.The namely appropriate thickness for increasing electrode thin film layer 30 of the present invention, guarantees to electrode film
Layer 30 carries out wet etching, reduces the surface roughness of the electrode thin film layer 30 later without disconnecting electrode thin film layer 30.
Further, the difference of the thickness of the thickness and pixel electrode 40 of the electrode thin film layer 30 is 10-500A, when
It can also be so adjusted, and ensured below film layer crystallization thickness with processing method according to practical film layer.
Specifically, the TFT layer 20 includes grid 21, the covering underlay substrate 10 on the underlay substrate 10
And it the gate insulating layer 22 of grid 21, the active layer 23 on the gate insulating layer 22, is set on the active layer 23 simultaneously
The source electrode 24 that is connect respectively with 23 both ends of active layer and drain electrode 25 and the covering gate insulating layer 22, active layer 23,
Passivation layer 26 on source electrode 24 and drain electrode 25.
Specifically, the via hole 261 that the pixel electrode 40 runs through passivation layer 26 by one is contacted with drain electrode 25.
Specifically, the material of the electrode thin film layer 30 is the combination of one or both of ITO and Ag.
Specifically, to the electrode thin film layer 30 carry out wet etching and reduce with a thickness of 10-500A.
In conclusion the production method of oled substrate of the invention on TFT layer by forming one layer of electrode thin film layer, it is first
Wet etching first is carried out to the electrode thin film layer, reduces the surface roughness of the electrode thin film layer, then to the electrode thin film layer
It carries out patterned process and obtains pixel electrode, improve the flatness of pixel electrode, reduce point discharge, what reduction OLED failed can
Energy property, improves the reliability of OLED.The flatness of oled substrate of the invention, pixel electrode is high, reduces point discharge, reduces
A possibility that OLED fails, the high reliablity of OLED.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (10)
1. a kind of production method of oled substrate, which comprises the steps of:
Step S1, underlay substrate (10) are provided, forms TFT layer (20) on the underlay substrate (10)；
Step S2, one layer of electrode thin film layer (30) is formed on the TFT layer (20), the electrode thin film layer (30) is carried out wet
It etches to reduce the surface roughness of the electrode thin film layer (30)；
Step S3, patterned process is carried out to the electrode thin film layer (30) and obtains pixel electrode (40).
2. the production method of oled substrate as described in claim 1, which is characterized in that in the step S2, using hydrochloric acid, hydrogen
Fluoric acid or potassium hydroxide solution carry out wet etching to the electrode thin film layer (30).
3. the production method of oled substrate as described in claim 1, which is characterized in that in the step S2, to the electricity
Before very thin film layer (30) carries out wet etching, the thickness of the electrode thin film layer (30) is greater than the thickness of the pixel electrode (40)
Degree.
4. the production method of oled substrate as claimed in claim 3, which is characterized in that the thickness of the electrode thin film layer (30)
And the difference of the thickness of the pixel electrode (40) is 10-500A.
5. the production method of oled substrate as described in claim 1, which is characterized in that the TFT layer (20) includes being set to institute
It states the grid (21) on underlay substrate (10), the gate insulating layer (22) for covering the underlay substrate (10) and grid (21), set
In on the gate insulating layer (22) active layer (23), be set to the active layer (23) on and respectively with the active layer (23)
The source electrode (24) of both ends connection and drain electrode (25) and cover the gate insulating layer (22), active layer (23), source electrode (24) and
The passivation layer (26) to drain on (25).
6. the production method of oled substrate as claimed in claim 5, which is characterized in that the pixel electrode (40) passes through consistent
The via hole (261) for wearing passivation layer (26) is contacted with drain electrode (25).
7. the production method of oled substrate as described in claim 1, which is characterized in that the material of the electrode thin film layer (30)
For the combination of one or both of ITO and Ag.
8. the production method of oled substrate as described in claim 1, which is characterized in that in the step S2, to the electrode
Film layer (30) carry out wet etching and reduce with a thickness of 10-500A.
9. a kind of oled substrate characterized by comprising underlay substrate (10), the TFT layer being set on the underlay substrate (10)
(20) and be set to the TFT layer (20) on pixel electrode (40)；
By forming one layer of electrode thin film layer (30) on the TFT layer (20), wet corrosion is carried out to the electrode thin film layer (30)
It carves to reduce the surface roughness of the electrode thin film layer (30), then patterned process is carried out to the electrode thin film layer (30) and is obtained
To the pixel electrode (40).
10. oled substrate as claimed in claim 9, which is characterized in that the TFT layer (20) includes being set to the underlay substrate
(10) gate insulating layer (22) of grid (21), the covering underlay substrate (10) and grid (21) on is set to the grid
Active layer (23) on insulating layer (22) is set on the active layer (23) and connect respectively with the active layer (23) both ends
In source electrode (24) and drain electrode (25) and the covering gate insulating layer (22), active layer (23), source electrode (24) and drain electrode (25)
Passivation layer (26)；
The pixel electrode (40) is contacted by a via hole (261) through passivation layer (26) with drain electrode (25)；
The material of the electrode thin film layer (30) is the combination of one or both of ITO and Ag.
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| CN201811544627.8A CN109638176A (en) | 2018-12-17 | 2018-12-17 | The production method and oled substrate of oled substrate |
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| CN201811544627.8A CN109638176A (en) | 2018-12-17 | 2018-12-17 | The production method and oled substrate of oled substrate |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141975A (en) * | 2021-11-30 | 2022-03-04 | 深圳市华星光电半导体显示技术有限公司 | Method for improving roughness of anode film layer of OLED device and laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1717141A (en) * | 2004-06-29 | 2006-01-04 | 日本东北先锋公司 | Organic EL panel and method of forming the same |
| CN1901246A (en) * | 2005-07-19 | 2007-01-24 | 东北先锋公司 | Self-emission panel and method of manufacturing same |
| CN101953231A (en) * | 2008-02-15 | 2011-01-19 | 昭和电工株式会社 | Method for treating surface of electrode, electrode, and process for producing organic electroluminescent element |
| JP2015138765A (en) * | 2014-01-24 | 2015-07-30 | 日本放送協会 | Organic electroluminescent element, method for manufacturing the same, and display device |
| CN108231836A (en) * | 2016-12-09 | 2018-06-29 | 乐金显示有限公司 | Organic light-emitting display device and its manufacturing method |
-
2018
- 2018-12-17 CN CN201811544627.8A patent/CN109638176A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1717141A (en) * | 2004-06-29 | 2006-01-04 | 日本东北先锋公司 | Organic EL panel and method of forming the same |
| CN1901246A (en) * | 2005-07-19 | 2007-01-24 | 东北先锋公司 | Self-emission panel and method of manufacturing same |
| CN101953231A (en) * | 2008-02-15 | 2011-01-19 | 昭和电工株式会社 | Method for treating surface of electrode, electrode, and process for producing organic electroluminescent element |
| JP2015138765A (en) * | 2014-01-24 | 2015-07-30 | 日本放送協会 | Organic electroluminescent element, method for manufacturing the same, and display device |
| CN108231836A (en) * | 2016-12-09 | 2018-06-29 | 乐金显示有限公司 | Organic light-emitting display device and its manufacturing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141975A (en) * | 2021-11-30 | 2022-03-04 | 深圳市华星光电半导体显示技术有限公司 | Method for improving roughness of anode film layer of OLED device and laser |
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| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20190416 |
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