KR100504536B1 - Method for Manufacturing Liquid Crystal Display devices - Google Patents
Method for Manufacturing Liquid Crystal Display devices Download PDFInfo
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- KR100504536B1 KR100504536B1 KR10-2002-0017362A KR20020017362A KR100504536B1 KR 100504536 B1 KR100504536 B1 KR 100504536B1 KR 20020017362 A KR20020017362 A KR 20020017362A KR 100504536 B1 KR100504536 B1 KR 100504536B1
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- South Korea
- Prior art keywords
- thin film
- liquid crystal
- crystal display
- amorphous ito
- hydrofluoric acid
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 29
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 150000002736 metal compounds Chemical class 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000002253 acid Substances 0.000 description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 150000003377 silicon compounds Chemical class 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000004148 unit process Methods 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum compound Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
본 발명은 불산으로 비정질 ITO를 식각하는 액정표시소자 제조방법에 관한 것으로, 본 발명의 액정표시소자 제조방법은 기판 상에 게이트 배선 및 데이터 배선에 연결된 복수개의 박막트랜지스터를 형성하고, 상기 박막트랜지스터를 포함하는 기판 상에 보호막을 형성하고, 상기 보호막 상에 비정질 ITO 박막을 증착하고, 상기 게이트 배선 및 데이터 배선으로 정의되는 화소영역의 화소전극을 형성하기 위해 상기 비정질 ITO 박막의 일부를 불산으로 식각함으로써 상기 박막트랜지스터의 절연막, 보호막 및 비정질 ITO를 각각을 상기 불산과 같은 하나의 식각액으로 식각할 수 있기 때문에 생산성을 높일 수 있다.The present invention relates to a liquid crystal display device manufacturing method for etching amorphous ITO with hydrofluoric acid, the liquid crystal display device manufacturing method of the present invention forms a plurality of thin film transistors connected to a gate wiring and a data wiring on a substrate, the thin film transistor Forming a protective film on the substrate, depositing an amorphous ITO thin film on the protective film, and etching a portion of the amorphous ITO thin film with hydrofluoric acid to form a pixel electrode of a pixel region defined by the gate wiring and data wiring. Since the insulating film, the protective film, and the amorphous ITO of the thin film transistor can be etched with one etchant such as hydrofluoric acid, productivity can be increased.
Description
본 발명은 액정표시소자 제조방법에 관한 것으로서, 특히, 투명 전극의 비정질 ITO를 불산으로 식각하기 위한 액정표시소자 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a method for manufacturing a liquid crystal display device for etching amorphous ITO of a transparent electrode with hydrofluoric acid.
일반적으로 액정표시장치는 소형화, 경량화, 박형화가 가능한 표시장치로서 널리 사용되고 있다. 이와 같은 액정표시소자는 콘트라스트(contrast) 비가 크고, 계조 표시나 동화상 표시에 적합하며 전력소비가 작다는 장점 때문에, CRT(cathode ray tube)의 단점을 극복할 수 있는 대체수단으로써 점차 그 사용 영역이 확대되고 있다.BACKGROUND ART In general, liquid crystal displays are widely used as displays that can be miniaturized, lightweight, and thin. Such liquid crystal display devices have a high contrast ratio, are suitable for gray scale display or moving image display, and have low power consumption. Therefore, the liquid crystal display device is gradually used as an alternative means to overcome the disadvantage of cathode ray tube (CRT). It is expanding.
이러한 액정표시소자의 액정패널은 게이트 배선 및 데이터 배선에 의해 정의된 화소 영역에 박막트랜지스터와 화소전극을 구비한 하부 기판과, 컬러필터층과 공통전극을 구비한 상부 기판과, 상기 두 기판 사이에 개재된 액정층으로 구성된다.The liquid crystal panel of the liquid crystal display device includes a lower substrate having a thin film transistor and a pixel electrode in a pixel region defined by gate wiring and data wiring, an upper substrate having a color filter layer and a common electrode, and interposed between the two substrates. It consists of the liquid crystal layer.
일반적으로 액정표시장치는 전계생성전극이 각각 형성되어 있는 두 기판을 두 전극이 형성되어 있는 면이 마주 대하도록 배치하고 두 기판 사이에 액정 물질을 주입한 다음, 두 전극에 전압을 인가하여 생성되는 전기장에 의해 액정 분자를 움직이게 함으로써, 이에 따라 달라지는 빛의 투과율에 의해 화상을 표현하는 장치이다.In general, a liquid crystal display device is formed by arranging two substrates on which electric field generating electrodes are formed so that the surfaces on which the two electrodes are formed face each other, injecting a liquid crystal material between the two substrates, and then applying a voltage to the two electrodes. By moving the liquid crystal molecules by an electric field, the device expresses an image by the transmittance of light that varies accordingly.
이와 같은 액정표시장치는 다양한 형태로 이루어질 수 있는데, 현재 박막 트랜지스터와 박막 트랜지스터에 연결된 화소 전극이 행렬 방식으로 배열된 능동 행렬 액정표시장치(Active Matrix LCD : AM-LCD)가 해상도 및 동영상 구현 능력이 우수하여 가장 주목받고 있다.Such a liquid crystal display may be formed in various forms. Currently, an active matrix LCD (AM-LCD) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has a high resolution and a moving image capability. It is excellent and attracts the most attention.
이러한 액정표시장치는 하부 기판에 화소전극이 형성되어 있고, 상부 기판에 공통전극이 형성되어 있는 구조로, 두 전극 사이에 걸리는 기판에 수직한 방향의 전기장에 의해 액정 분자를 구동하는 방식이다.The liquid crystal display device has a structure in which a pixel electrode is formed on a lower substrate, and a common electrode is formed on an upper substrate, and the liquid crystal molecules are driven by an electric field in a direction perpendicular to the substrate applied between the two electrodes.
이하, 도면을 참조하여 일반적인 액정표시소자에 대하여 상세히 설명한다.Hereinafter, a general liquid crystal display device will be described in detail with reference to the accompanying drawings.
도 1a는 종래 기술에 따른 액정표시소자의 평면도이고, 도 1b는 도 1a의 I∼I'에 대한 단면도이다.1A is a plan view of a liquid crystal display device according to the related art, and FIG. 1B is a cross-sectional view taken along line II ′ of FIG. 1A.
도 1a에 도시된 바와 같이, 액정표시소자는 복수개의 게이트 배선(1)과 복수개의 데이터 배선(3)으로 정의되는 복수의 화소영역(도시하지 않음)과, 상기 화소영역에 상응하는 화소전극(8)과, 상기 게이트 배선(1)의 신호에 따라 스위칭 되어 상기 데이터 배선(3)의 신호를 상기 화소전극(8)에 인가하는 박막 트랜지스터(7)를 포함하여 구성된다.As shown in FIG. 1A, a liquid crystal display device includes a plurality of pixel regions (not shown) defined by a plurality of gate lines 1 and a plurality of data lines 3, and a pixel electrode corresponding to the pixel regions ( 8) and a thin film transistor 7 which is switched in accordance with the signal of the gate wiring 1 to apply the signal of the data wiring 3 to the pixel electrode 8.
여기서, 상기 게이트 배선(1) 및 데이터 배선(3)은 전기적인 저항을 줄이기 위해 알루미늄계 화합물의 반투명 금속으로 이루어져 있고, 상기 화소전극(8)은 ITO와 같은 빛의 투과성이 양호한 투명 금속으로 이루어져 있다.Here, the gate wiring 1 and the data wiring 3 are made of a translucent metal of an aluminum compound to reduce electrical resistance, and the pixel electrode 8 is made of a transparent metal having good light transmittance such as ITO. have.
또한, 도 1b에 도시된 바와 같이, 액정표시소자는 하부 기판(9) 상에 일방향으로 형성된 게이트 배선(1)과 상기 게이트 배선(1)에서 돌출하도록 형성된 게이트 전극(2)과, 상기 게이트 배선(1)을 포함한 기판 전면에 형성된 게이트 절연막(11)과, 상기 게이트 전극에 상측의 게이트 절연막(11)위에 섬 모양으로 형성된 반도체층(12)과, 상기 반도체층(12)의 양 가장자리에 데이터 배선(3)을 포함하여 형성된 소스/드레인 전극(5a)(5b)을 포함하여 이루어진다. 즉, 상기 게이트전극(2), 반도체층(12) 및 소스/드레인 전극(5a)(5b)으로 이루어진 박막 트랜지스터(7)(Thin Film Transistor ; TFT)의 구조를 이루고, 상기 박막트랜지스터(7)를 포함한 하부 기판(9) 전체에 걸쳐 형성된 보호막(13)과, 상기한 보호막(13) 위에서 드레인 전극(5b)과 연결되어 형성된 화소전극(8)과 액정의 규칙적인 배열을 위한 상기 배향막(17a)을 더 포함하여 이루어진다.In addition, as shown in FIG. 1B, the liquid crystal display device includes a gate wiring 1 formed in one direction on the lower substrate 9, a gate electrode 2 formed to protrude from the gate wiring 1, and the gate wiring. A gate insulating film 11 formed on the entire surface of the substrate including (1), a semiconductor layer 12 formed in an island shape on the gate insulating film 11 above the gate electrode, and data at both edges of the semiconductor layer 12; Source / drain electrodes 5a and 5b formed by including the wiring 3 are included. That is, the thin film transistor 7 includes the gate electrode 2, the semiconductor layer 12, and the source / drain electrodes 5a and 5b, and forms the thin film transistor 7. A protective film 13 formed over the entire lower substrate 9, the pixel film 8 connected to the drain electrode 5b on the protective film 13, and the alignment film 17a for regular arrangement of liquid crystals. ) Is further included.
그리고, 상기 상부 기판(10) 위에 상기한 게이트 배선(1), 데이터 배선(3), 및 박막 트랜지스터(7)에 상응하는 부분의 빛을 차단하기 위해 형성된 차광막(14)과, 상기한 차광막(14) 위에 색상을 구현하기 위해 형성된 컬러필터층(15)과, 상기 하부 기판의 화소 전극으로부터 전위차를 갖기 위해 형성된 공통전극(16)과, 상기 공통전극(16) 위에 액정의 규칙적인 배열을 위해 형성된 상기 배향막(17b)을 더 포함하여 이루어진다. 또한 하부 기판(9)과 상부 기판(10)을 일정공간을 유지하게 합착 되고 사이에 형성된 액정층(23)을 더 포함하여 이루어진다.The light blocking film 14 formed to block light of portions corresponding to the gate wiring 1, the data wiring 3, and the thin film transistor 7 on the upper substrate 10, and the light blocking film ( 14) a color filter layer 15 formed to realize color on the common substrate, a common electrode 16 formed to have a potential difference from the pixel electrode of the lower substrate, and a regular array of liquid crystals formed on the common electrode 16; The alignment layer 17b is further included. In addition, the lower substrate 9 and the upper substrate 10 are bonded to each other to maintain a predetermined space, and further comprises a liquid crystal layer 23 formed between.
도면에는 도시하지 않았지만, 상기 하부 기판(9)과 상부 기판(10) 사이에 일정공간을 갖도록 하기 위해 스패이서가 산포되어 있다.Although not shown in the figure, a spacer is distributed in order to have a predetermined space between the lower substrate 9 and the upper substrate 10.
여기서, 상기 화소 전극은 스퍼터링 방법으로 형성된 비정질(Amorphous)의 투명전극(Indium Tin Oxide : ａ-ITO)으로 이루어져 있다.The pixel electrode may be formed of an amorphous transparent electrode (a-ITO) formed by a sputtering method.
한편, 이와 같은 구조의 액정표시소자 제조공정은 실리콘 반도체 제조공정과 유사하여 기판 상에 박막을 증착(Thin Film Deposition)하고, 사진석판인쇄법(Photolithography)에 따른 일련의 공정, PR(Photo Resistor)도포, 노광, 식각(Etching), 세정(Cleaning)과 같은 단위공정을 이용하여 상기 기판 상에 증착된 박막을 패터닝(Patterning)한다. 이때, 이와 같은 단위 공정은 상기 박막의 형성에 따라 다수의 반복 작업을 요한다. On the other hand, the manufacturing process of the liquid crystal display device having such a structure is similar to the silicon semiconductor manufacturing process, thin film deposition on the substrate (Thin Film Deposition), a series of processes according to the photolithography, Photo Resistor (PR) The thin film deposited on the substrate is patterned by using a unit process such as coating, exposure, etching, and cleaning. At this time, such a unit process requires a plurality of repetitive operations according to the formation of the thin film.
특히, 종래 기술의 액정표시소자 제조방법은 상기 식각 공정에서 주로 산(Acid)을 이용하는데, 전기적인 저항을 줄이기 위해 알루미늄계 금속화합물을 주성분으로 하는 상기 게이트 배선, 게이트 전극, 데이터 배선 또는 소스/드레인 전극들은 인산, 질산 및 초산 등의 묽은 약산을 이용하여 형성할 수 있고, 광 투과성을 높이기 위한 비정질 ITO로 이루어진 상기 화소전극은 옥살산 또는 염산과 같은 묽은 약산을 이용하여 형성할 수 있다.In particular, the liquid crystal display device manufacturing method of the prior art mainly uses an acid in the etching process, the gate wiring, gate electrode, data wiring or source / mainly composed of an aluminum-based metal compound in order to reduce the electrical resistance The drain electrodes may be formed using dilute weak acids such as phosphoric acid, nitric acid and acetic acid, and the pixel electrode made of amorphous ITO for enhancing light transmittance may be formed using dilute weak acids such as oxalic acid or hydrochloric acid.
예컨대, 500Å의 비정질 ITO(Amorphous Indium Tin Oxide) 박막을 식각하기 위하여 약 10% 내지 20%의 옥살산 또는 염산에 70초 내지 300 초의 식각 공정시간이 소요된다.For example, an etching process time of about 70 to 300 seconds is required for about 10% to 20% of oxalic acid or hydrochloric acid to etch 500 Å of amorphous ITO (Amorphous Indium Tin Oxide) thin film.
반면, 실리콘 산화막(SiO2) 또는 실리콘 질화막(SiNx)과 같은 실리콘 화합물로 이루어진 상기 게이트 절연막, 반도체층, 보호막은 약 수%의 농도의 불산(HF)과 같은 묽은 강산을 이용하여 형성할 수 있다.On the other hand, the gate insulating film, the semiconductor layer, and the protective film made of a silicon compound such as a silicon oxide film (SiO 2 ) or a silicon nitride film (SiNx) may be formed using a thin strong acid such as hydrofluoric acid (HF) at a concentration of about several percent. .
따라서, 종래 기술의 액정표시소자 제조방법은 알루미늄계 금속화합물과 비정질 ITO는 인산, 질산, 초산, 옥살산 및 염산과 같은 묽은 약산을 이용하여 식각할 수 있고, 실리콘 화합물은 불산과 같은 묽은 강산을 이용하여 식각할 수 있다.Therefore, in the liquid crystal display device manufacturing method of the prior art, aluminum-based metal compound and amorphous ITO can be etched using dilute weak acid such as phosphoric acid, nitric acid, acetic acid, oxalic acid and hydrochloric acid, and silicon compound using dilute strong acid such as hydrofluoric acid. Can be etched.
하지만, 이와 같은 종래 기술의 액정표시소자 제조방법은 다음과 같은 문제점이 있다.However, the liquid crystal display device manufacturing method of the prior art has the following problems.
첫째, 종래 기술의 액정표시소자 제조방법은 상기 알루미늄계 금속화합물 또는 비정질 ITO를 식각하기 위하여 인산, 질산, 초산, 옥살산 및 염산과 같은 여러 종류의 약산을 사용할 경우 다양한 상기 약산 중 일부가 미비하거나, 이들을 사용하는 식각장비의 고장으로 대체 장비가 없을 경우 전체 생산장비의 가동을 중지해야 하기 때문에 생산성이 떨어진다.First, in the liquid crystal display device manufacturing method of the prior art, when using various types of weak acids such as phosphoric acid, nitric acid, acetic acid, oxalic acid and hydrochloric acid to etch the aluminum-based metal compound or amorphous ITO, some of the various weak acids are insufficient, Productivity drops because of failure of etching equipment that uses them, and without the replacement equipment, the entire production equipment must be shut down.
즉, 상기 박막트랜지스터의 절연막 및 보호막으로 이루어진 상기 실리콘 화합물을 식각하기 위한 장비가 많이 사용되기 때문에 주로 여분의 장비가 일부 구비되어 있고, 상기 알루미늄계 금속화합물 또는 비정질 ITO를 식각은 각각의 식각 용액에 따라 다른 식각장비들로 이루어져 있으므로 여분의 장비가 거의 구비되어 있지 않다. 따라서, 이들 상기 금속물 식각 장비중 고장이 발생할 경우 상기 금속물의 식각 공정에 다른 식각장비를 사용할 수 없다. 더욱이, 상기 불산과 같은 강산을 식각액으로 하는 식각 장비의 유휴가 있을 경우 상기 금속물의 식각 공정에 사용할 수 없기 때문에 생산성이 떨어진다.That is, because a lot of equipment for etching the silicon compound consisting of the insulating film and the protective film of the thin film transistor is used a lot of extra equipment is mainly provided, and etching the aluminum-based metal compound or amorphous ITO to each etching solution As it consists of different etching equipment, there is almost no extra equipment. Therefore, when a failure occurs among these metal etching equipment, other etching equipment cannot be used in the etching process of the metal. Further, when there is idle of the etching equipment using a strong acid such as hydrofluoric acid as an etching solution, productivity is lowered because it cannot be used in the etching process of the metal.
둘째, 종래 기술의 액정표시소자 제조방법은 상기 금속 박막을 식각하기 위해 높은 농도의 묽은 약산을 사용할 경우 상기 약산의 원액의 소모가 많아져 제조 단가가 높아지기 때문에 생산성이 떨어진다.Second, the liquid crystal display device manufacturing method of the prior art is low productivity because the use of a high concentration of dilute weak acid to etch the metal thin film increases the production cost of the weak solution of the weak acid increases the manufacturing cost.
셋째, 상기 게이트 배선, 데이터 배선, 화소 전극과 같은 알루미늄 금속화합물 또는 비정질 ITO는 묽은 약산을 이용하여 식각이 이루어질 경우 식각 공정에 소요되는 시간이 많이 걸리기 때문에 생산성이 떨어진다.Third, the aluminum metal compound such as the gate wiring, the data wiring, the pixel electrode, or the amorphous ITO is less productive because the etching process takes a long time when the etching is performed using a weak weak acid.
본 발명은 상기와 같은 문제점을 해결하기 위해 안출한 것으로서, 상기 알루미늄계 금속화합물과 비정질 ITO를 불산으로 식각함으로써 생산성이 높은 액정표시소자 제조방법을 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a method of manufacturing a liquid crystal display device having high productivity by etching the aluminum-based metal compound and amorphous ITO with hydrofluoric acid.
상기 목적을 달성하기 위한 본 발명의 액정표시소자 제조방법은, 기판 상에 게이트 배선 및 데이터 배선에 연결된 복수개의 박막트랜지스터를 형성하는 공정과, 상기 박막트랜지스터를 포함하는 기판 상에 보호막을 형성하는 공정과, 상기 보호막 상에 비정질 ITO 박막을 증착하는 공정과, 상기 게이트 배선 및 데이터 배선으로 정의되는 화소영역의 화소전극을 형성하기 위해 상기 비정질 ITO 박막의 일부를 불산으로 식각하는 공정을 포함하여 이루어지는 것을 특징으로 한다.According to an aspect of the present invention, a method of manufacturing a liquid crystal display device includes: forming a plurality of thin film transistors connected to a gate line and a data line on a substrate; and forming a protective film on a substrate including the thin film transistor. And depositing an amorphous ITO thin film on the passivation layer, and etching a portion of the amorphous ITO thin film with hydrofluoric acid to form a pixel electrode of a pixel region defined by the gate wiring and data wiring. It features.
본 발명의 액정표시소자 제조방법은 묽은 불산을 이용하여 실리콘 화합물 뿐만 아니라 비정질 ITO와 알루미늄계 금속화합물을 식각할 수 있기 때문에 생산성을 향상시킬 수 있다.In the liquid crystal display device manufacturing method of the present invention, since not only the silicon compound but also amorphous ITO and aluminum-based metal compound can be etched using dilute hydrofluoric acid, productivity can be improved.
이하, 도면을 참조하여 본 발명의 액정표시소자 제조방법을 상세히 설명한다.Hereinafter, a method of manufacturing a liquid crystal display device of the present invention will be described in detail with reference to the drawings.
도 2는 본 발명에 따른 액정표시소자의 제조 단면도로서, 본 발명의 액정표시소자 제조방법은 하부 기판(109) 상에 일방향으로 게이트 배선(도시하지 않음) 및 상기 게이트 배선에서 돌출하도록 게이트 전극(102)을 형성하고, 상기 게이트 전극(102)을 포함한 기판 전면에 게이트 절연막(111)을 형성하고, 상기 게이트 전극 상측 게이트 절연막(111)위에 반도체층(112)을 형성하고, 상기 반도체층(112)의 양 가장자리에 데이터 배선(103) 및 소스/드레인 전극(105a)(105b)을 형성한다. 즉, 상기 기판 상에 상기 게이트전극(102), 게이트 절연막(111), 반도체층(112) 및 소스/드레인 전극(105a)(105b)으로 이루어진 박막 트랜지스터(도시하지 않음)(Thin Film Transistor ; TFT)를 형성한다.FIG. 2 is a cross-sectional view illustrating a manufacturing method of a liquid crystal display device according to an exemplary embodiment of the present invention. 102 is formed, a gate insulating layer 111 is formed on the entire surface of the substrate including the gate electrode 102, a semiconductor layer 112 is formed on the gate insulating layer 111 above the gate electrode, and the semiconductor layer 112 is formed. The data line 103 and the source / drain electrodes 105a and 105b are formed at both edges of the " That is, a thin film transistor (not shown) including the gate electrode 102, the gate insulating layer 111, the semiconductor layer 112, and the source / drain electrodes 105a and 105b on the substrate (Thin Film Transistor; TFT) ).
다음, 상기 박막트랜지스터를 포함한 하부 기판(109) 전체에 걸쳐 보호막(113)을 형성하고, 상기한 보호막(113) 위에서 상기 드레인 전극(105b)과 연결되도록 비정질 ITO를 증착하고, 상기 게이트 배선 및 데이터 배선(103)으로 정의되는 화소영역에 상응하는 화소전극(108)을 형성하기 위해 상기 비정질 ITO를 패터닝하는 것을 포함한다.Next, a passivation layer 113 is formed over the entire lower substrate 109 including the thin film transistor, and an amorphous ITO is deposited on the passivation layer 113 so as to be connected to the drain electrode 105b. Patterning the amorphous ITO to form a pixel electrode 108 corresponding to the pixel region defined by the wiring 103.
여기서, 상기 비정질 ITO의 패터닝 방법은 사진석판인쇄법에 따라 PR도포, 노광, 식각, 세정과 같은 단위공정을 이용하여 상기 하부 기판 상에 증착된 박막을 패터닝한다.Here, the patterning method of the amorphous ITO patterning the thin film deposited on the lower substrate using a unit process such as PR coating, exposure, etching, cleaning according to the photolithography printing method.
특히, 상기 비정질 ITO의 식각은 1% 내지 20%의 불산을 이용하여 이루어지는데, 바람직하게는 30℃의 온도에서 2%의 상기 불산을 사용하여 500Å의 상기 비정질ITO를 약 60초 내지 100초 동안 식각할 수 있다.In particular, the etching of the amorphous ITO is performed using 1% to 20% hydrofluoric acid, preferably 500% of the amorphous ITO using about 2% of the hydrofluoric acid at a temperature of 30 ° C for about 60 seconds to 100 seconds. It can be etched.
이때, 상기 비정질 ITO가 상기 불산에 식각되는 반응식은 다음과 같다.In this case, the reaction scheme in which the amorphous ITO is etched in the hydrofluoric acid is as follows.
먼저, 상기 비정질 ITO의 구성은 인듐산화물(In2O3)과 주석산화물(SnO2)이 비정질의 화합물로 결합되어 있기 때문에 각각에 대하여 다음과 같은 반응식을 갖는다.First, since the amorphous ITO is composed of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ) as an amorphous compound, the amorphous ITO has the following scheme.
In2O3 + 6HF ?? 2InF3 + 3H2OIn 2 O 3 + 6HF ?? 2InF 3 + 3H 2 O
SnO2 + 4HF ?? SnF4 +2H2OSnO 2 + 4HF ?? SnF 4 + 2H 2 O
즉, 상기 비정질 ITO의 식각 반응에서 생성된 상기 H2O는 상기 불산을 묽게 만들고 상기 InF3 및 SnF4는 상기 불산의 용액에 용해되어 이온 상태로 남게된다.That is, the H 2 O generated in the etching reaction of the amorphous ITO dilutes the hydrofluoric acid and the InF 3 and SnF 4 are dissolved in the solution of hydrofluoric acid and remain in the ionic state.
또한, 상기 불산을 사용할 경우 비정질 ITO뿐만 아니라, 상기 불산이 실리콘 화합물의 상기 보호막에 영향을 미칠 수 있다.In addition, when the hydrofluoric acid is used, not only amorphous ITO, but the hydrofluoric acid may affect the protective film of the silicon compound.
하지만, 상기 불산의 농도를 2% 정도로 묽게하여 사용하기 때문에 상기 불산이 상기 보호막에 거의 영향을 미칠 수가 없다. However, the hydrofluoric acid hardly affects the protective film because the hydrofluoric acid is diluted to about 2%.
따라서, 본 발명의 액정표시소자 제조방법은 묽은 불산을 이용하여 상기 비정질 ITO를 식각할 수 있기 때문에 상기 화소전극(108)을 신속하고 안정성 있게 형성할 수 있고, 상기 식각 공정에 있어서 상기 불산의 활용도를 높일 수 있다.Therefore, in the method of manufacturing the liquid crystal display of the present invention, since the amorphous ITO can be etched using dilute hydrofluoric acid, the pixel electrode 108 can be formed quickly and stably, and the utilization of the hydrofluoric acid in the etching process can be achieved. Can increase.
또한, 본 발명의 액정표시소자 제조방법은 상기 불산을 이용하여 실리콘 화합물을 식각하고, 상기 일정한 조건에서 상기 비정질 ITO를 식각할 수 있을 뿐만 아니라, 전기적인 저항이 낮기 때문에 상기 게이트 배선 및 데이터 배선으로 사용되는 알루미늄계 금속화합물을 식각할 수 있다.In addition, the method of manufacturing a liquid crystal display device of the present invention can not only etch the silicon compound using the hydrofluoric acid, but also the amorphous ITO under the predetermined conditions, and also has low electrical resistance to the gate wiring and data wiring. The aluminum-based metal compound used can be etched.
이상 상술한 바와 같이, 본 발명의 액정표시소자 제조방법은 다음과 같은 효과가 있다. As described above, the liquid crystal display device manufacturing method of the present invention has the following effects.
본 발명의 액정표시소자 제조방법은 불산과 같은 강산을 이용하여 비정질 ITO를 식각할 수 있기 때문에 신속하고 안정성 있게 화소전극을 형성할 수 있다.In the liquid crystal display device manufacturing method of the present invention, since the amorphous ITO can be etched using a strong acid such as hydrofluoric acid, the pixel electrode can be formed quickly and stably.
둘째, 본 발명의 액정표시소자 제조 방법은 비정질 ITO 및 알루미늄금속화합물을 식각할 수 있게 함으로써 불산의 활용성을 높일 수 있고, 상기 불산을 이용한 제조장비의 가동을 극대화시킬 수 있기 때문에 생산성을 높일 수 있다.Second, the liquid crystal display device manufacturing method of the present invention can increase the utilization of the hydrofluoric acid by allowing the etching of the amorphous ITO and aluminum metal compound, it is possible to maximize the operation of the manufacturing equipment using the hydrofluoric acid to increase the productivity have.
도 1a는 종래 기술에 따른 액정표시소자의 평면도.1A is a plan view of a liquid crystal display device according to the prior art.
도 1b는 도 1a의 I∼I'의 단면도.FIG. 1B is a sectional view taken along line II 'of FIG. 1A; FIG.
도 2는 본 발명에 따른 액정표시소자의 제조 단면도.2 is a cross-sectional view of manufacturing a liquid crystal display device according to the present invention;
*도면의 주요부분에 대한 설명** Description of the main parts of the drawings *
102 : 게이트 전극 103 : 데이터 배선102 gate electrode 103 data wiring
105a : 스스 전극 105b : 드레인 전극105a: self electrode 105b: drain electrode
108 : 화소 전극 109 : 하부 기판 108: pixel electrode 109: lower substrate
111 : 게이트 절연막 112 : 반도체층 111 gate insulating film 112 semiconductor layer
113 : 보호막113: shield
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR19980016213A (en) * | 1996-08-27 | 1998-05-25 | 구자홍 | Manufacturing method of liquid crystal display device |
| KR20000052288A (en) * | 1999-01-15 | 2000-08-16 | 구본준 | Method of fabricating Thin film Transistor |
| KR20010003045A (en) * | 1999-06-21 | 2001-01-15 | 김영환 | Method for manufacturing organic field emission display device |
| KR20020015237A (en) * | 2000-08-21 | 2002-02-27 | 구본준, 론 위라하디락사 | Material of Pixel Electrode in Liquid Crystal Display and Method of Etching the same |
| KR20030001879A (en) * | 2001-06-28 | 2003-01-08 | 동우 화인켐 주식회사 | Etchant for izo layer and etching method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR19980016213A (en) * | 1996-08-27 | 1998-05-25 | 구자홍 | Manufacturing method of liquid crystal display device |
| KR20000052288A (en) * | 1999-01-15 | 2000-08-16 | 구본준 | Method of fabricating Thin film Transistor |
| KR20010003045A (en) * | 1999-06-21 | 2001-01-15 | 김영환 | Method for manufacturing organic field emission display device |
| KR20020015237A (en) * | 2000-08-21 | 2002-02-27 | 구본준, 론 위라하디락사 | Material of Pixel Electrode in Liquid Crystal Display and Method of Etching the same |
| KR20030001879A (en) * | 2001-06-28 | 2003-01-08 | 동우 화인켐 주식회사 | Etchant for izo layer and etching method thereof |
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