KR20000046820A - Apparatus for supplying etching gas for semiconductor vaporization chamber - Google Patents

Apparatus for supplying etching gas for semiconductor vaporization chamber Download PDF

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Publication number
KR20000046820A
KR20000046820A KR1019980063547A KR19980063547A KR20000046820A KR 20000046820 A KR20000046820 A KR 20000046820A KR 1019980063547 A KR1019980063547 A KR 1019980063547A KR 19980063547 A KR19980063547 A KR 19980063547A KR 20000046820 A KR20000046820 A KR 20000046820A
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KR
South Korea
Prior art keywords
hydrofluoric acid
deposition chamber
bottle
vaporization chamber
deposition
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KR1019980063547A
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Korean (ko)
Inventor
손상수
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김영환
현대반도체 주식회사
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Application filed by 김영환, 현대반도체 주식회사 filed Critical 김영환
Priority to KR1019980063547A priority Critical patent/KR20000046820A/en
Publication of KR20000046820A publication Critical patent/KR20000046820A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching

Abstract

PURPOSE: An apparatus for supplying an etching gas for a semiconductor vaporization chamber is provided to implement a filter on one side of a fluorine bottle to prevent operation error. CONSTITUTION: An apparatus for supplying an etching gas for a semiconductor vaporization chamber includes a vaporization chamber(11), a fluorine bottle(12), and a nitride supplier(13). The vaporization chamber(11) performs the vaporization process. The fluorine bottle(12) is implemented on one side of the vaporization chamber so as to etch the vaporization gas on the vaporization chamber. The fluorine bottle supplies the fluorine gas into the vaporization chamber. The nitride supplier(13) supplies the nitrogen gas into the fluorine bottle for bubbling off the fluorine solution in the fluorine bottle. A filter is further implemented for filtering off the fluorine gas which is supplied into the vaporization chamber.

Description

반도체 증착챔버용 식각가스 공급구조Etch gas supply structure for semiconductor deposition chamber

본 발명은 반도체 증착챔버용 식각가스 공급구조에 관한 것으로, 특히 불산 증기만을 증착챔버로 공급하여 식각을 진행함으로써 공정 불량을 방지할 수 있도록 한 것이다.The present invention relates to an etching gas supply structure for a semiconductor deposition chamber, and in particular, by supplying only the hydrofluoric acid vapor to the deposition chamber to perform the etching to prevent the process failure.

일반적으로 반도체 제조공정 중 증착장비는 증착챔버 내에 반응가스를 주입하여 일정한 온도와 압력으로 웨이퍼에 증착막을 형성하기 위한 것으로서, 이러한 증착장비가 도 1에 도시되어 있는 바, 이에 대해 설명하면 다음과 같다.In general, a deposition apparatus during a semiconductor manufacturing process is for forming a deposition film on a wafer at a predetermined temperature and pressure by injecting a reaction gas into a deposition chamber. Such a deposition apparatus is illustrated in FIG. 1. .

도시한 바와 같이, 종래 기술에 의한 증착장비는 컨베이어(미도시)에 의해 웨이퍼가 이송되면서 증착공정을 진행하기 위한 수개의 증착챔버(1)가 설치되고, 상기 증착챔버(1)의 일측에는 증착공정을 진행하고 난 뒤 증착챔버(1)에 증착된 반응가스를 식각하기 위해 불산(HF)을 공급하는 불산병(2)이 설치되며, 상기 불산병(2)의 일측에는 상기 불산병(2)에 들어 있는 불산 용액을 버블링시키기 위해 불산병(2)에 질소가스를 공급하는 질소공급수단이 설치된다.As shown, the deposition apparatus according to the prior art is provided with several deposition chambers 1 for carrying out the deposition process while the wafer is transported by a conveyor (not shown), and one side of the deposition chamber 1 is deposited After the process, a hydrofluoric acid bottle (2) for supplying hydrofluoric acid (HF) is installed to etch the reaction gas deposited in the deposition chamber (1), and one side of the hydrofluoric acid bottle (2) has the hydrofluoric acid bottle (2). The nitrogen supply means for supplying nitrogen gas to the hydrofluoric acid bottle (2) is installed in order to bubble the hydrofluoric acid solution contained in).

상기 질소공급수단은 질소공급부(3)와, 이 질소공급부(3)로부터 공급되는 질소가스의 압력을 조절하기 위한 레귤레이터(4)와, 이 레귤레이터의 일측에 설치되어 공급되는 질소가스의 유량을 조절하는 유량조절기(5)로 구성된다.The nitrogen supply means includes a nitrogen supply unit 3, a regulator 4 for adjusting the pressure of the nitrogen gas supplied from the nitrogen supply unit 3, and a flow rate of nitrogen gas installed and supplied to one side of the regulator. It consists of a flow regulator (5).

미설명부호 (V1) 내지 (V6)은 솔레노이드 밸브이다.Reference numerals V1 to V6 denote solenoid valves.

상기와 같은 증착챔버를 식각하기 위한 동작을 설명하면 다음과 같다.An operation for etching the deposition chamber as described above is as follows.

컨베이어에 의해 이송된 웨이퍼가 증착챔버(1)에 유입되어 소정의 증착공정을 진행하고 난 뒤에는 질소공급부(3)로부터 제 1 내지 제 3솔레노이드 밸브(V1∼V3)를 통해 상기 증착챔버(1)에 질소가스를 공급하여 증착챔버(1)의 저면에 형성된 다수개의 배기홀(1a)로 증착가스를 배기시킨다.After the wafer transferred by the conveyor flows into the deposition chamber 1 and undergoes a predetermined deposition process, the deposition chamber 1 from the nitrogen supply unit 3 through the first to third solenoid valves V1 to V3. Nitrogen gas is supplied to the exhaust gas to be exhausted through the plurality of exhaust holes 1a formed at the bottom of the deposition chamber 1.

이와 같이 증착챔버(1) 내부의 증착가스를 퍼지시킨 뒤에는 상기 질소공급부(3)로부터 불산병(2)에 질소를 공급하여 불산병(2)에 저장되어 있는 불산 용액을 버블링시킨다.After purging the deposition gas inside the deposition chamber 1 as described above, nitrogen is supplied from the nitrogen supply unit 3 to the hydrofluoric acid bottle 2 to bubble the hydrofluoric acid solution stored in the hydrofluoric acid bottle 2.

상기 불산병(2)에 발생된 불산 증기는 제 4 내지 제 6솔레노이드 밸브(V4∼V6)를 통해 증착챔버(1)의 상부 및 하부로 공급되어 증착챔버(1) 내부에 증착되어 있는 증착가스를 식각하게 된다.Deposition gas generated in the hydrofluoric acid bottle 2 is supplied to the upper and lower portions of the deposition chamber 1 through the fourth to sixth solenoid valves V4 to V6 and deposited in the deposition chamber 1. Will be etched.

그러나, 상기와 같은 종래 기술은 불산병(2)으로부터 버블링된 불산 증기가 증착챔버(1)로 공급될 때 불산 증기에 액화성 불산도 포함되어 공급되므로 식각 정도를 반감시키는 문제점이 있었다.However, the prior art as described above has a problem in that the amount of etching is halved because the hydrofluoric acid vapor bubbled from the hydrofluoric acid bottle 2 is supplied to the deposition chamber 1 and the liquid hydrofluoric acid is also supplied.

본 발명은 이러한 문제점을 해결하기 위한 것으로, 불산 용액은 여과된 상태로 불산 증기만을 증착챔버로 공급하여 식각을 진행함으로써 공정 불량을 방지할 수 있는 반도체 증착챔버용 식각가스 공급구조를 제공하는데 그 목적이 있다.The present invention is to solve this problem, to provide an etching gas supply structure for the semiconductor deposition chamber that can prevent the process failure by supplying only the hydrofluoric acid vapor to the deposition chamber in a filtered state to the etching chamber. There is this.

도 1은 종래 기술에 의한 반도체 증착챔버용 식각가스 공급구조를 보인 개략도.1 is a schematic view showing an etching gas supply structure for a semiconductor deposition chamber according to the prior art.

도 2는 본 발명에 의한 반도체 증착챔버용 식각가스 공급구조를 보인 개략도.Figure 2 is a schematic diagram showing an etching gas supply structure for a semiconductor deposition chamber according to the present invention.

** 도면의 주요부분에 대한 부호의 설명 **** Explanation of symbols for main parts of drawings **

11 ; 증착챔버 12 ; 불산병11; Deposition chamber 12; Foshan disease

13 ; 질소공급부 16 ; 필터13; Nitrogen supply section 16; filter

17 ; 체크밸브17; Check valve

상기 목적을 달성하기 위한 본 발명은 증착공정을 진행하기 위한 증착챔버와, 이 증착챔버의 일측에 설치되어 증착챔버에 증착된 증착가스를 식각하기 위해 증착챔버에 불산 증기를 공급하는 불산병과, 이 불산병의 일측에 설치되어 상기 불산병에 들어 있는 불산 용액을 버블링시키기 위해 불산병에 질소가스를 공급하는 질소공급부를 포함하여 구성된 반도체 증착챔버용 식각가스 공급구조에 있어서, 상기 불산병의 일측에 상기 증착챔버로 공급되는 불산 증기를 여과해 주기 위한 필터를 설치하는 것을 특징으로 한다.The present invention for achieving the above object is a deposition chamber for proceeding the deposition process, and installed in one side of the deposition chamber and a hydrofluoric acid bottle for supplying the hydrofluoric acid vapor to the deposition chamber for etching the deposition gas deposited on the deposition chamber, and An etching gas supply structure for a semiconductor deposition chamber comprising a nitrogen supply unit installed on one side of a hydrofluoric acid bottle and supplying nitrogen gas to the hydrofluoric acid bottle to bubble the hydrofluoric acid solution contained in the hydrofluoric acid bottle. It characterized in that for installing a filter for filtering the hydrofluoric acid vapor supplied to the deposition chamber.

이하, 본 발명에 의한 반도체 증착챔버용 식각가스 공급구조를 첨부도면에 도시한 실시예에 따라 설명하면 다음과 같다.Hereinafter, the etching gas supply structure for the semiconductor deposition chamber according to the present invention will be described according to the embodiment shown in the accompanying drawings.

본 발명에 의한 증착장비는 도 2에 도시한 바와 같이, 증착공정을 진행하기 위한 수개의 증착챔버(11)와, 이 증착챔버(11)의 일측에 설치되어 증착공정을 진행한 뒤 증착챔버(11)에 증착된 증착가스를 식각하기 위해 증착챔버(11)에 불산 증기를 공급하기 위해 내부에 소정량의 불산 용액이 들어있는 불산병(12)과, 이 불산병(12)의 일측에 설치되어 상기 불산병(12)에 들어 있는 불산 용액을 버블링시키기 위해 불산병(12)에 질소가스를 공급하는 질소공급부(13)를 포함하여 구성된다.As shown in FIG. 2, the deposition apparatus according to the present invention is provided with several deposition chambers 11 for carrying out a deposition process and one side of the deposition chamber 11 to proceed with a deposition process. A hydrofluoric acid bottle 12 having a predetermined amount of hydrofluoric acid solution therein for supplying hydrofluoric acid vapor to the deposition chamber 11 to etch the deposition gas deposited in 11), and installed on one side of the hydrofluoric acid bottle 12 And a nitrogen supply unit 13 for supplying nitrogen gas to the hydrofluoric acid bottle 12 to bubble the hydrofluoric acid solution contained in the hydrofluoric acid bottle 12.

그리고 상기 불산병(12)과 질소공급부(13)의 사이에는 불산병(12)으로 공급되는 질소가스의 압력 및 유량을 조절하기 위한 레귤레이터(14)와 유량조절기(15)가 설치된다.In addition, a regulator 14 and a flow controller 15 for controlling the pressure and flow rate of the nitrogen gas supplied to the hydrofluoric acid bottle 12 are installed between the hydrofluoric acid bottle 12 and the nitrogen supply unit 13.

한편, 상기 불산병(12)의 일측에는 상기 불산병(12)에서 버블링되어 증착챔버(11)로 공급되는 불산 증기에 포함되어 공급되는 액화성 불산을 여과해 주기 위한 필터(16)가 설치되며, 이 필터(16)의 일단부에는 불산 용액 회수라인(L)이 불산병(11)에 연결되는데, 이때 상기 불산 용액 회수라인(L)에는 불산 증기가 불산병(11)으로 역류되는 것을 방지하기 위한 체크밸브(17)가 구비된다.On the other hand, one side of the hydrofluoric acid bottle 12 is provided with a filter 16 for filtering the liquefied hydrofluoric acid, which is contained in the hydrofluoric acid vapor bubbled from the hydrofluoric acid bottle 12 and supplied to the deposition chamber 11 is supplied. At one end of the filter 16, a hydrofluoric acid solution recovery line L is connected to the hydrofluoric acid bottle 11, where the hydrofluoric acid vapor is flowed back into the hydrofluoric acid bottle 11. It is provided with a check valve 17 to prevent.

미설명 부호 (11a)는 증착챔버(11) 내부에 잔존하는 증착가스를 배기시키기 위한 배기홀이고, (V1) 내지 (V4)는 솔레노이드 밸브이다.Reference numeral 11a denotes an exhaust hole for exhausting the deposition gas remaining in the deposition chamber 11, and V1 to V4 are solenoid valves.

따라서, 본 발명에서는 증착공정이 완료된 증착챔버(11)에 불산 증기를 공급할 때 질소공급부(13)로부터 공급된 질소가스에 의해 버블링된 불산 증기만이 상기 필터(16)를 통과하여 증착챔버(11)에 공급되므로 증착챔버(11)의 식각 불량을 방지할 수 있게 된다.Therefore, in the present invention, when the hydrofluoric acid vapor is supplied to the deposition chamber 11 in which the deposition process is completed, only the hydrofluoric acid vapor bubbled by the nitrogen gas supplied from the nitrogen supply unit 13 passes through the filter 16 and the deposition chamber ( Since it is supplied to 11, it is possible to prevent the etching failure of the deposition chamber (11).

이상에서 설명한 바와 같이, 본 발명에 의한 반도체 증착챔버용 식각가스 공급구조는 불산병의 일측에 필터를 설치하여 액화성 불산은 여과된 상태로 불산 증기만을 증착챔버로 공급하여 식각을 진행함으로써 공정 불량을 방지하게 된다.As described above, the etching gas supply structure for the semiconductor deposition chamber according to the present invention is provided with a filter on one side of the hydrofluoric acid bottle and the process is defective by supplying only the hydrofluoric acid vapor to the deposition chamber while the liquefied hydrofluoric acid is filtered. Will be prevented.

Claims (1)

증착공정을 진행하기 위한 증착챔버와, 이 증착챔버의 일측에 설치되어 증착챔버에 증착된 증착가스를 식각하기 위해 증착챔버에 불산 증기를 공급하는 불산병과, 이 불산병의 일측에 설치되어 상기 불산병에 들어 있는 불산 용액을 버블링시키기 위해 불산병에 질소가스를 공급하는 질소공급부를 포함하여 구성된 반도체 증착챔버용 식각가스 공급구조에 있어서, 상기 불산병의 일측에 상기 증착챔버로 공급되는 불산 증기를 여과해 주기 위한 필터를 설치하는 것을 특징으로 하는 반도체 증착챔버용 식각가스 공급구조.A deposition chamber for carrying out the deposition process, a hydrofluoric acid bottle installed at one side of the deposition chamber and supplying hydrofluoric acid vapor to the deposition chamber for etching the deposition gas deposited in the deposition chamber, and installed at one side of the hydrofluoric acid bottle; An etching gas supply structure for a semiconductor deposition chamber including a nitrogen supply unit for supplying nitrogen gas to a hydrofluoric acid bottle to bubble a hydrofluoric acid solution contained in a bottle, wherein the hydrofluoric acid vapor is supplied to the deposition chamber at one side of the hydrofluoric acid bottle Etching gas supply structure for a semiconductor deposition chamber, characterized in that to install a filter for filtering.
KR1019980063547A 1998-12-31 1998-12-31 Apparatus for supplying etching gas for semiconductor vaporization chamber KR20000046820A (en)

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