JP4943466B2 - Semiconductor device manufacturing method and substrate processing apparatus - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a method for manufacturing a semiconductor device, and more particularly to an oxide film or a metal on a substrate such as a semiconductor wafer (hereinafter referred to as a wafer) using a thermochemical reaction in the manufacturing process of the semiconductor device. The present invention relates to an effective substrate processing technique for performing a desired process such as film formation.

  In a semiconductor device manufacturing process, a vertical semiconductor manufacturing apparatus may be used as a substrate processing apparatus for forming an oxide film or a metal film on a wafer.

A conventional vertical semiconductor manufacturing apparatus of this type includes a processing furnace composed of a reaction vessel and a heater, and exhausts gas while introducing gas into the reaction vessel to be heated. There are various methods for introducing gas into the reaction vessel.
For example, in the vertical semiconductor manufacturing apparatus shown in FIG. 18, a reaction tube 2 as a cylindrical outer tube made of a heat-resistant material such as quartz glass is provided almost vertically on a manifold 5 made of a metal material such as stainless steel. It has been. A cylindrical tube 3 as an inner tube is provided inside the reaction tube 2. A boat 4 that holds a plurality of wafers W is provided inside the cylindrical tube 3. A gas introduction port 6 and an exhaust port 7 are provided in the manifold 5. Further, a heater 1 is provided so as to surround the outer periphery of the reaction tube 2 so that the inside of the reaction tube 2 can be heat-treated at a predetermined temperature. The reaction vessel 2, the cylindrical tube 3 and the manifold 5 constitute a reaction vessel.
During film formation, a predetermined film forming gas is introduced from the inlet 6 provided in the manifold 5 into the reaction tube 2 maintained at a predetermined pressure as indicated by an arrow. A gas introduced into the reaction tube from the lower side of the reaction tube 2 is exhausted to the upper side of the reaction tube 2 through the wafer processing space 10, and a cylindrical space formed between the reaction tube 2 and the cylindrical tube 3. Through the exhaust port 7 provided in the manifold 5. As described above, the manufacturing apparatus shown in FIG. 18 has the inlet 6 provided in the manifold 5, introduces a film forming gas from below the wafer processing space 10, and exhausts it from above.

  The basic configuration of the vertical semiconductor manufacturing apparatus shown in FIG. 19 is the same as that shown in FIG. 18, but is different in the following points. In order to extend the introduction port 6 to the wafer processing space 10, a plurality of gas nozzles 16 having different lengths are raised from the manifold 5 into the wafer processing space 10. A film forming gas is introduced from the top of each gas nozzle 16 located on the side of the wafer W as shown by an arrow, and exhausted from the lower exhaust port 7 (see, for example, Patent Document 1).

The vertical semiconductor manufacturing apparatus shown in FIG. 20 has the same basic configuration as that of FIG. 18, but differs in the following points. In order to extend the inlet 6 to the wafer processing space 10, one gas nozzle 26 is raised from the manifold 5. The gas nozzle 26 is provided with a large number of holes facing a plurality of wafers W, and a film forming gas is introduced from the side of each wafer W as indicated by an arrow, and exhausted from the lower exhaust port 7. .
If the diameters of the many holes provided in the gas nozzle 26 are the same, the gas pressure is lower in the hole provided in the lower part (upstream side of the gas) and the hole provided in the upper part (downstream side of the gas). Since they are different, the film forming gas flow rate cannot be made uniform in each hole. Therefore, in this type of gas nozzle, the diameter of the hole is changed between the lower part and the upper part in order to make the film forming gas flow rate uniform.

Further, the vertical semiconductor manufacturing apparatus shown in FIG. 21 has a single tube configuration in which the reaction vessel is constituted only by the reaction tube 2 and is not provided with a cylindrical tube or a manifold. Then, a gas nozzle 36 communicating with the introduction port 6 is placed on the outer wall of the reaction tube 2 from the lower side of the reaction tube 2 to the ceiling of the reaction tube 2, and the film forming gas is shown from the upper side of the wafer processing space 10 by an arrow. Is exhausted from the lower exhaust port 7.

The conventional vertical semiconductor manufacturing apparatus as described above has the following various problems.
For example, in the case shown in FIG. 18, since the film forming gas is introduced from below and exhausted upward, the film forming gas hardly flows to the center of the wafer W, resulting in a difference in film thickness between the wafer center and the outer periphery. There is a problem of affecting the film thickness uniformity in the wafer surface. Further, when the wafers W positioned at the lower and upper portions in the wafer processing space 10 are compared, the film forming gas is consumed at the lower portion. However, there is a problem that a film thickness difference that the film thickness becomes thicker occurs, which affects the film thickness uniformity between wafer surfaces.

Further, in the case shown in FIG. 19, although the film thickness uniformity within and between the wafer surfaces is satisfied for the time being, maintenance is poor because a plurality of gas nozzles having different lengths are required. Further, since the gas nozzle 16 is provided in the wafer processing space 10, adhesion and deposition of reaction products occur. For example, in the case of Si ₃ N ₄ film formation, adhesion and deposition of reaction products occur remarkably. In addition, when the film formation conditions are changed, there are many cases in which the change in the film formation conditions cannot be handled unless the length and number of the gas nozzles 16 are changed. Has the problem of being restricted.

In the case shown in FIG. 20, since the gas nozzle 26 is provided in the wafer processing space 10, adhesion and deposition of reaction products occur. In particular, since the reaction product adheres and accumulates in the holes of the gas nozzle 26, there arises a problem that the holes must be maintained. For example, in film formation in which reaction products such as Si ₃ N ₄ are liable to adhere and accumulate, holes are blocked and the holes must be frequently maintained. In addition, when the film formation conditions are changed, the type of the gas nozzle must be changed so as to change the size of the hole. If the type of the gas nozzle is not changed, the conditions under which the film can be formed are limited. There's a problem. Further, when the reaction product is cleaned, the hole of the gas nozzle 26 becomes large due to etching, so that there is a problem that the hole size cannot be managed without replacing the gas nozzle.

  Further, the one shown in FIG. 21 has the problem of affecting the film thickness uniformity within and between the wafer surfaces as in the case shown in FIG.

JP 2000-68214 A

  As described above, in a conventional substrate processing apparatus that introduces gas from below the reaction tube and exhausts it upward, or introduces gas from above the reaction tube and exhausts it from below, it is difficult for gas to pass between the substrates. There was a problem that the film thickness uniformity within and between the substrates could not be improved. In addition, in a conventional substrate processing apparatus in which gas is introduced from the side of the reaction tube by a gas nozzle and exhausted from above, the film thickness is uniform within and between the wafer surfaces unless the gas supply tube is maintained and replaced many times. There was a problem that the performance could not be improved.

  The object of the present invention has been made in view of the above-mentioned problems of the prior art, and it is possible to perform in-plane / multiple wafer formation at once without performing maintenance and replacement of the gas supply pipe many times. It is an object of the present invention to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of improving the film thickness uniformity between surfaces.

  According to one aspect of the present invention, a reaction tube having a processing chamber capable of processing a plurality of substrates arranged in a direction perpendicular to the substrate processing surface, and heating provided so as to surround the outer periphery of the reaction tube A gas introduction pipe reaching at least the outside of the heating device is provided on a side surface of the reaction tube in a region where the substrate is processed inside the reaction tube, and the gas introduction pipe includes the gas introduction pipe. There is provided a substrate processing apparatus in which a gas jet port for jetting gas from an introduction pipe to a processing chamber is provided in a slit shape so as to extend over at least a plurality of substrates in a direction perpendicular to the substrate processing surface. The

  According to the present invention, it is possible to improve the processing uniformity within and between the surfaces of a plurality of substrates to be processed at one time without performing maintenance and replacement of the gas supply pipes many times.

1 is a schematic side view of a vertical semiconductor manufacturing apparatus according to a first embodiment of the present invention. 1 is a schematic plan view of a vertical semiconductor manufacturing apparatus according to a first embodiment of the present invention. It is the schematic of the gas introduction pipe | tube and gas exhaust pipe | tube of the reaction tube which are the 1st Embodiment of this invention. It is the schematic of the gas introduction pipe | tube and gas exhaust pipe | tube of a reaction tube which are the 1st modification of 1st Embodiment. It is the schematic of the gas introduction pipe | tube and gas exhaust pipe | tube of a reaction pipe which are the 2nd and 3rd modification of 1st Embodiment. It is a schematic plan view of the plasma vertical semiconductor manufacturing apparatus which is the 4th modification of 1st Embodiment. It is a plasma generation circuit diagram which is the 4th modification of 1st Embodiment. It is a schematic side view of the upper part of the reaction tube which is the 5th modification of 1st Embodiment. It is a schematic side view of the upper part of the reaction tube which is the 6th modification of 1st Embodiment. It is a schematic side view of the upper part of the reaction tube which is the 7th modification of 1st Embodiment. It is a schematic side view of the film-forming gas flow prevention means to the upper part of the reaction tube which is the 8th modification of 1st Embodiment. It is a schematic side view of the film-forming gas flow prevention means to the upper part of the reaction tube which is the 9th modification of 1st Embodiment. It is a schematic side view of the film-forming gas flow prevention means to the lower part of the reaction tube which is the 10th modification of 1st Embodiment. It is a schematic side view of the film-forming gas flow prevention means to the lower part of the reaction tube which is the 11th modification of 1st Embodiment. It is a schematic side view of the film-forming gas flow prevention means to the lower part of the reaction tube which is the 12th modification of 1st Embodiment. It is a schematic side view at the time of using the Versi gas of the vertical semiconductor manufacturing apparatus which is the 13th modification of 1st Embodiment. It is a schematic side view of the vertical type semiconductor manufacturing apparatus which is one Example of this invention. It is a schematic side view of the vertical type semiconductor manufacturing apparatus of a prior art example. It is a schematic side view of the vertical type semiconductor manufacturing apparatus of a prior art example. It is a schematic side view of the vertical type semiconductor manufacturing apparatus of a prior art example. It is a schematic side view of the vertical type semiconductor manufacturing apparatus of a prior art example. It is a schematic side view of the vertical semiconductor manufacturing apparatus which is the 2nd Embodiment of this invention. It is a principal part enlarged view of the vertical type semiconductor manufacturing apparatus which is the 2nd Embodiment of this invention. It is a schematic plan view of the vertical type semiconductor manufacturing apparatus which is the 2nd Embodiment of this invention. It is a principal part enlarged view of the vertical type semiconductor manufacturing apparatus which is the 2nd Embodiment of this invention. It is a schematic side view of the boat which is the 1st modification of 2nd Embodiment. It is a schematic side view of the vertical type semiconductor manufacturing apparatus which is the 2nd modification of 2nd Embodiment. It is a principal part enlarged view of the vertical type semiconductor manufacturing apparatus which is the 3rd modification of 2nd Embodiment. It is a schematic side view of the vertical semiconductor manufacturing apparatus which is the 3rd Embodiment of this invention. It is a cross-sectional view of the processing furnace before accommodating the temperature detector which is the 3rd Embodiment of this invention. FIG. 31 is a longitudinal sectional view taken along line A-A ′ of FIG. 30. It is a cross-sectional view of the processing furnace after accommodating the temperature detector which is the 3rd Embodiment of this invention. It is a gas flow rate simulation model figure in the slit-shaped gas jet nozzle of embodiment of this invention. It is explanatory drawing of the simulation result in the case of the 300 mm wafer in the slit-shaped gas jet nozzle of embodiment of this invention. It is explanatory drawing of the simulation result in the case of the 450 mm wafer in the slit-shaped gas jet nozzle of embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings.

<Processing furnace>
FIG. 1 is a schematic configuration diagram of a processing furnace 202 of a vertical semiconductor manufacturing apparatus as a substrate processing apparatus suitably used in the first embodiment of the present invention, and is shown as a vertical cross-sectional view. FIG. 2 is a cross-sectional view of the processing furnace 202.

《Outline of processing furnace》
The vertical semiconductor device includes a processing furnace 202 including a cylindrical reaction tube 203 and a heater 206 as a cylindrical heating device. The cylindrical reaction tube 203 has therein a processing chamber 201 capable of processing a plurality of wafers 200 arranged in a direction perpendicular to a wafer processing surface as a substrate processing surface. The cylindrical heater 206 is provided so as to surround the outer periphery of the reaction tube 203. A gas introduction tube 230 and a gas exhaust tube 231 that reach at least the outside of the heater 206 are provided on the side surface of the reaction tube 203.
In particular, the gas introduction pipe 230 is divided into a plurality of sections in a direction perpendicular to the processing surface (main surface) of the wafer 200. Further, the gas exhaust pipe 231 is also divided into a plurality in the direction perpendicular to the processing surface of the wafer 200. The gas introduction pipe 230 and the gas exhaust pipe 231 are arranged on a straight line passing through the diameter of the wafer 200 arranged in the reaction tube 203.

《Reaction tube》
As shown in FIG. 1, the processing furnace 202 includes a reaction tube 203. The reaction tube 203 is installed vertically. The reaction tube 203 is, for example, quartz (SiO ₂ ) or silicon carbide (SiC).
) And the like, and is formed in a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 201 is formed inside the reaction tube 203. The reaction tube 203 is configured to be able to process the wafer 200 in the wafer processing space 204 in a state where the wafer 200 is aligned in multiple stages in the vertical direction in a horizontal posture by a substrate holder described later. Here, the wafer processing space 204 is a space where the wafer 200 can actually be processed in the processing chamber 201.

<Gas introduction pipe / exhaust pipe>
On the side surface of the reaction tube 203, a gas introduction tube 230 for introducing gas into the reaction tube 203 and a gas exhaust tube 231 for exhausting the reaction tube 203 are provided. The gas introduction pipe 230 and the gas exhaust pipe 231 are formed of the same material as the reaction tube 203 and are arranged on a horizontal straight line passing through the center of the wafer 200 arranged in the reaction tube 203. The gas introduction pipe 230 and the gas exhaust pipe 231 are used to introduce / exhaust gas introduction / exhaust into / from the wafer processing space 204 from the horizontal direction, and the gas run-up region before the gas reaches the inside of the reaction tube 203 is the wafer 200 In order to be provided in parallel with the processing surface, it is provided so as to reach the outside of the heater 206 described later. The gas introduction pipe 230 has a size such that a gas ejection port 212 for ejecting gas from the gas introduction pipe 230 to the wafer processing space 204 extends over at least a plurality of wafers 200 in a direction perpendicular to the wafer processing surface. It is provided in a slit shape. The gas exhaust pipe 231 has a size such that a gas exhaust port 213 for exhausting gas from the wafer processing space 204 to the gas exhaust pipe 231 extends over at least a plurality of wafers 200 in a direction perpendicular to the wafer processing surface. It is provided in a slit shape.

  Here, the gas introduction pipe 230 and the gas exhaust pipe 231 of the reaction tube 203 are long in the lateral direction, and the gas ejection port 212 through which gas is ejected from the gas introduction pipe 230 to the processing chamber 201 is perpendicular to the wafer processing surface. If the slits are formed so as to straddle at least a plurality of wafers 200, the gas flow tends to be laminar and the gas flow can be unidirectional, and the gas entering between the wafers 200 can be obtained. The amount can be made uniform. Therefore, a gas having a uniform concentration and a uniform speed can be sent between the wafer surfaces, and the uniformity between the wafer surfaces and the in-plane film thickness is improved. Further, the gas can be supplied to the wafer without reducing the gas flow velocity from the upstream end of the gas introduction pipe to the substrate.

  The gas introduction pipe 230 and the gas exhaust pipe 231 of the first embodiment have a flat body shape. For example, as shown in FIG. 3, it has a vertically long elliptical shape along the axial direction of the reaction tube 203. A side surface position of the reaction tube 203 provided with the gas introduction pipe 230 and the gas exhaust pipe 231 is a position facing the wafer processing space 204. The gas introduction tube 230 and the gas exhaust tube 231 are horizontally connected to the side surface of the reaction tube 203. The gas introduction pipe 230 and the gas exhaust pipe 231 are integrally connected to the reaction pipe 203 so that both pipe axes are aligned on a straight line. This integral connection is, for example, a welding connection. Thus, by providing the gas introduction pipe 230 and the gas exhaust pipe 231 on the side surface of the reaction tube 203, the gas flow in the processing chamber 201 is changed to a side flow.

The gas introduction pipe 230 has a plurality of gas introduction compartments that are partitioned in a direction perpendicular to the processing surface of the wafer 200, and gas flows in each gas introduction compartment. Moreover, the gas ejection port 212 is formed in each of the gas introduction section. In the illustrated example, the gas introduction pipe 230 has gas introduction compartments 230 a to 230 h divided into eight by a partition wall 228.
Further, process gas supply units 249a to 249h and first inert gas supply units 250a to 250h are connected to the upstream sides of the plurality of gas introduction partition units 230a to 230h of the gas introduction pipe 230, respectively.
Thus, when the wafer 200 is processed in the reaction tube 203, if the wafer 200 is disposed at any position in the wafer processing space 204 facing the gas introduction compartments 230a to 230h, the processing gas supply is performed. When the processing gas is supplied from the parts 249a to 249h and the wafer 200 is not disposed at any position in the wafer processing space 204 facing the gas introduction partition parts 230a to 230h, the first inert gas supply part 250a. An inert gas such as N ₂ gas can be supplied from ˜250 h.

The gas exhaust pipe 231 has a plurality of gas exhaust compartments partitioned in a direction perpendicular to the processing surface of the wafer 200, and exhausts the wafer processing space 204 from each gas exhaust compartment. Moreover, the gas exhaust port 213 is formed in each of the gas exhaust compartments. In the illustrated example, the gas exhaust pipe 231 has eight gas exhaust partition portions 231a to 231h partitioned by a partition wall 229. The gas exhaust compartments 231a to 231h and the gas introduction compartments 230a to 230h are horizontally opposed to each other with compartments having the same subscript attached, with the reaction tube 203 in between.
Thus, when the wafer 200 is processed in the reaction tube 203, if the wafer 200 is disposed at any position in the wafer processing space 204 facing the gas exhaust partition sections 231a to 231h, the gas exhaust is performed. When the processing gas is exhausted from the partition portions 231a to 231h and the wafer 200 is not disposed at any position in the wafer processing space 204 facing the gas exhaust partition portions 231a to 231h, the gas exhaust partition portions 231a to 231h are concerned. It is possible to exhaust the inert gas from.

The gas ejection port 212 is preferably not divided only at the location of the gas ejection port 212 that is downstream of the gas introduction pipe 230. That is, it is preferable to provide one gas outlet 212 for one gas introduction section in the gas introduction pipe 230. Considering the strength of the gas introduction pipe 230, it is better to divide the gas outlet 212. However, if such a division is provided, the gas flowing in the gas introduction pipe 230 is likely to collide with the divided area. End up. For this reason, for example, the reaction product generated by preheating the processing gas is clogged at the part where it is separated, the part that is evenly divided at the time of cleaning cannot be cleaned, or the segregated part cannot be prevented from changing over time. End up. In particular, if the size of the segmented portion changes with time, there is a problem such that it becomes impossible to form a film in the same state as before the change with time.
On the other hand, if the gas injection port 212 is not divided, and if one gas injection port is provided for one gas introduction section in the gas introduction pipe 230, the flow rate of the one gas introduction section is set to one gas injection section. Can be ejected from the exit. Further, during the rotation of the wafer 200, considering the inside of the wafer 200, since the distance from the gas outlet 212 to the center of the wafer 200 is the longest, the flow velocity at the center of the wafer 200 tends to be slow. However, when the flow rate flowing through one gas introduction section is ejected from one gas ejection port 212, the gas having the same amount of heat reaches the center of the wafer 200 without lowering the flow rate of the gas. Can be made.

The gas ejection port 212 preferably has an opening area having the same area as the cross-sectional area in the direction perpendicular to the wafer processing surface of the gas introduction section. As a result, gas can be supplied more smoothly, and the above-described adverse effects can be eliminated. In addition, you may provide a throttle part in one gas jet outlet 212 so that the opening area of the gas jet outlet 212 may be made smaller than the cross-sectional area of the gas introduction partition part in the direction perpendicular to the wafer processing surface. As a result, the gas flow rate can be further increased. In this case, the change in the cross-sectional area A ′ of the gas outlet 212 on the inner wall of the reaction tube 203 from the cross-sectional area A of the gas inlet 211 of the gas inlet tube 230 may be A = A ′ or A> A ′. .

"heater"
The processing furnace 202 has a heater 206 as a heating device. The heater 206 has a cylindrical shape and is provided so as to cover the outer periphery of the reaction tube 203. The heater 206 is vertically installed by being supported by a heater base 251 as a holding plate. The reaction tube 203 is installed vertically by being supported by the heater base 251.
The heater 206 includes a cylindrical heat insulator 260 whose upper part is closed and whose lower part is opened, and a gas introduction pipe 230.
Is formed so that the gas exhaust pipe 231 can be horizontally taken out from the side surface of the reaction tube 203 to the outside of the heater 206. And an outlet 262 for the gas exhaust pipe.
These inlets 261 and outlets 262 are formed, for example, as groove-shaped notches that extend upward from the lower end of the heat insulator 260.
Thereby, when the heater 206 is put on the reaction tube 203 from above the reaction tube 203, the gas introduction tube 230 and the gas exhaust tube 231 provided on the side surface of the reaction tube 203 are prevented from interfering with the heater 206. It is possible to cover the outer periphery of the tube 203.
As a result of covering the outer periphery of the reaction tube 203 with the heater 206, the ends of the gas introduction tube 230 and the gas exhaust tube 231 that reach the outside of the heater 206 opposite to the reaction tube connection portion protrude to both outer sides of the heater 206. Become.

  As described above, when the inlet 261 and the outlet 262 are formed as groove-shaped notches extending upward from the lower end of the heat insulator 260, the following advantages are obtained as compared with the conventional case. When gas is supplied by starting up a gas nozzle or the like from the lower end of the heater as in the past, the gas is heated in the gas nozzle, and processing is performed depending on the height of the gas nozzle or the height of the wafer arranged in the vertical direction. The gas temperature is different among a plurality of wafers. However, a notch is formed in the heater over the entire wafer processing region, and the gas introduction pipe 230 and the gas exhaust pipe 231 are inserted into the notch so that the gas introduction pipe 230 and the gas exhaust pipe 231 are formed in the wafer 200. When installed horizontally, the temperature of the processing gas can be made uniform between wafer surfaces, that is, between a plurality of wafers processed at one time.

The heat insulator 260 is provided with a heating element. As shown in FIG. 2, the heating elements include a first heating element 266 that heats the reaction tube 203, a second heating element 267 that heats the gas introduction pipe 230, and a third heating element that heats the gas exhaust pipe 231. It is composed of a body 268.
The first heating element 266 is provided between the inner wall of the heat insulator 260 and the reaction tube 203. The first heating element 266 is provided along the inner wall of each zone that is divided into zones in the vertical direction as in the prior art, and is not provided at the inlet 261 and outlet 262, but reacts with the inner wall of the heat insulator 260. It is divided into two places between the pipe 203 and provided. The second heating elements 267 are provided between the introduction port 261 and the gas introduction pipe 230 by attachment jigs 271 respectively. The third heating elements 268 are provided between the outlet 262 and the gas exhaust pipe 231 by the attachment jigs 272, respectively. The first heating element 266 is configured by, for example, a resistance heater, and the second heating element 267 and the third heating element 268 are configured by, for example, an infrared lamp.

"mechanism"
Below the reaction tube 203, a seal cap 219 is provided as a furnace port lid capable of airtightly closing the lower end opening of the reaction tube 203. On the opposite side of the seal cap 219 from the processing chamber 201, a rotation mechanism 254 for rotating a boat 217 as a substrate holder described later is installed. A rotation shaft 255 of the rotation mechanism 254 passes through the seal cap 219 and is connected to the boat 217, and is configured to rotate the wafer 200 by rotating the boat 217. Although not shown in FIG. 1, the boat 217 can be carried into and out of the processing chamber 201 by a boat elevator as an elevating mechanism.

"boat"
The boat 217 as the substrate holder is made of, for example, quartz (SiO ₂ ) or silicon carbide (S
It is made of a heat-resistant glass material such as iC), and is configured to hold a plurality of wafers 200 in a horizontal posture and in a state where their centers are aligned with each other and held in multiple stages in the vertical direction. Specifically, the boat 217 includes a plurality of support columns 217a arranged in a cylindrical shape so as to support the outer periphery of the wafer 200, a top plate 217b that closes an upper portion between the plurality of support columns 217a, and a plurality of support columns 217a. And a bottom plate 217c that closes the lower part. In addition, at the lower part of the boat 217, quartz (SiO ₂ ) or silicon carbide (SiC) having the same shape as the wafer 200 is formed as a heat insulating part 216.
A plurality of heat insulating plates made of a heat resistant glass material such as the like are arranged, and the heat from the heater 206 is difficult to be transmitted to the lower part of the reaction tube 203.
The processing furnace 202 according to the present embodiment is configured as described above.

<< Thin Film Formation Method >>
Next, a method of forming a thin film on the wafer 200 under a reduced pressure by a CVD method as a step of the semiconductor device manufacturing process using the processing furnace 202 having the above configuration will be described.

《Import process》
A plurality of wafers 200 are loaded into the boat 217 (wafer charge), and as shown in FIG. 1, the boat 217 holding the plurality of wafers 200 is lifted by the boat elevator and loaded into the processing chamber 201 (boat loading). Is done. In this state, the seal cap 219 is in a state where the lower end of the reaction tube 203 is sealed. Moreover, the wafer 200 is arrange | positioned in each predetermined position of the wafer processing space 204 facing the gas introduction division parts 230a-230h by boat loading. In this case, the wafer processing space 204 is partitioned in accordance with the partitioning of the gas introduction pipe 230 and the gas exhaust pipe 231 in order to ensure the side flow in the wafer processing space 204 for each of the gas introduction partitioning sections 230a to 230h. As described above, the wafer 200 is preferably disposed at a position facing the partition wall 228 of the gas introduction pipe 230 and the partition wall 229 of the gas exhaust pipe 231.

《Pressure and temperature stabilization process》
The processing chamber 201 is evacuated to a desired pressure (degree of vacuum) through the exhaust pipe 231. In addition, the inside of the processing chamber 201 is heated by the heater 206 so as to have a desired temperature. Subsequently, the wafer 200 is rotated by rotating the boat 217 by the rotation mechanism 254.

<< Gas introduction process, substrate processing process, exhaust process >>
Next, the processing gas is supplied from the processing gas supply units 249 a to 249 h and is introduced into the wafer processing space 204 through the gas introduction compartments 230 a to 230 h of the gas introduction pipe 230. In this case, when the wafer 200 is disposed at a wafer processing space position facing the gas introduction compartments 230a to 230h, the processing gas is introduced from the processing gas supply units 249a to 249h.
When the wafer 200 is not disposed at the wafer processing space position facing the gas introduction compartments 230a to 230h, the inert gas is introduced from the first inert gas supply units 250a to 250h.
The introduced gas passes through the processing chamber 201 in the horizontal direction and is exhausted from the gas exhaust compartments 231a to 231h of the gas exhaust pipe 231. When the gas passes through the processing chamber 201, the gas contacts the processing surface of the rotating wafer 200 in parallel, and a thin film is deposited (deposited) on the surface of the wafer 200 by a thermal CVD reaction.

<Normal pressure recovery process>
When a preset processing time elapses, the inert gas is supplied from the first inert gas supply units 250a to 250h, the inside of the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is increased. Return to normal pressure.

<< Unloading process >>
Thereafter, the seal cap 219 is lowered, the lower end of the reaction tube 203 is opened, and the processed wafer 200 is unloaded from the lower end of the reaction tube 203 while being held by the boat 217 (boat unloading). The Thereafter, the processed wafer 200 is transferred to the boat 2.
17 is taken out (wafer discharge).

<< Effects of First Embodiment >>
As described above, according to the first embodiment, one or more of the following effects are exhibited.

《Improved processing uniformity within and between surfaces》
According to the first embodiment, since the gas introduction pipe 230 and the gas exhaust pipe 231 are connected horizontally to the side surface of the reaction tube 203, the introduction of gas and the exhaust of gas are introduced into the reaction tube 203 from the horizontal direction. Exhaust (can be a side flow). Therefore, the gas introduced from the gas introduction pipe 230 is introduced in a direction parallel to the processing surface of the wafer 200, and the gas easily flows between the wafers 200.
Since the gas introduction pipe 230 and the gas exhaust pipe 231 reach the outside of the heater 206 from the side surface of the reaction pipe 203, the gas introduction pipe 230 or the gas exhaust pipe 231 is connected to the inside of the reaction pipe 203 or the heater 206 and the reaction pipe. The diameter of the reaction tube 203 can be reduced as compared with the case where it does not reach the outside of the heater 206, for example, provided along the line 203. Since the gas flows in a space that easily flows, the film forming gas is more likely to flow between the wafers 200 when the diameter of the reaction tube 203 is reduced.
Further, a gas introduction pipe 230 and a gas exhaust pipe 231 are provided symmetrically with respect to the wafer 200 installed in the processing chamber 201. Accordingly, it is possible to improve the processing uniformity within and between the plurality of wafers 200 processed at a time.

In particular, the gas introduction pipe 230 and the gas exhaust pipe 231 are arranged on a straight line passing through the diameter of the wafer 200 arranged in the reaction tube 203 to be a gas running region before the gas reaches the inside of the reaction tube 203. Since the gas introduction compartments 230a to 230h are arranged in a direction parallel to the processing surface of the wafer 200, it becomes easier for the gas to flow between the wafers 200, and the processing uniformity within the surface of the plurality of wafers 200 to be processed at one time. Can be improved more.
Further, the gas introduction pipe 230 and the gas exhaust pipe 231 are partitioned into a plurality in a direction perpendicular to the processing surface of the wafer 200, and the deposition gas flows into the partitioned gas introduction partition sections 230a to 230h. become. Further, the processing gases introduced from the plurality of gas introduction compartments 230a to 230h of the gas introduction pipe 230 are exhausted from the plurality of gas exhaust compartments 231a to 231h of the gas exhaust pipe 231, respectively, and are indicated by arrows. As described above, the deposition gas flows in parallel at a plurality of locations in the vertical direction of the wafer processing space 204. Accordingly, the processing gas can be supplied to the wafer 200 from the horizontal direction and exhausted from the horizontal direction, so that the processing gas is smoothly supplied between the wafers 200. Therefore, the processing uniformity between the surfaces of the plurality of wafers 200 processed at a time can be further improved.
In this manner, in addition to the gas introduction pipe 230, the gas exhaust section 231 a to 231 h are similarly provided in the stacking direction of the wafers 200 with respect to the gas exhaust pipe 231. The processing uniformity during the process can be further improved.

<Loading effect>
Further, by introducing the film forming gas in a direction parallel to the processing surface of the wafer 200, the film forming gas can be made to flow evenly between a large number of wafers 200 to be formed at one time. Reacts with the wafer in the processing chamber, so the amount of gas decreases as the film forming gas advances in the processing chamber, and the upstream wafer is compared with the wafer on the upstream side of the film forming gas. However, it is possible to prevent the phenomenon that the thickness of the wafer on the downstream side becomes too small.

《Dummyless》
In addition, the dummy effect can be realized by the loading effect free. The dummyless process will be described.
In recent years, in the IC manufacturing method, since the form of production has changed from small-quantity mass production to multi-variety small-quantity production, it is desired to shorten the time from preparation of products to completion. For example, in a CVD apparatus for manufacturing a large amount of the same product such as a DRAM, the number of wafers 200 loaded into the boat 217 is the maximum number of boats loaded. However, in the case of high-mix low-volume production such as system LSIs, it becomes difficult to maintain the number of wafers 200 loaded on the boat at the maximum number of boats loaded, which is 50 to 70% of the maximum number of boats loaded. It is necessary to process at a high rate, or to process two or three wafers in extreme cases.
In such a case, in order to suppress variations in film formation between processing operations (hereinafter referred to as batches), it is common practice to control the processing conditions between the batches in the same way. Has been. For example, when the number of wafers (hereinafter referred to as product wafers) to be processed in one batch is reduced, the number of wafers that are not products (hereinafter referred to as dummy wafers) is replaced with the reduced number of product wafers. By replenishing, it is practiced to control the processing conditions of the batch in which the number of sheets has decreased to the same as the processing conditions of the batch in which the number of sheets does not decrease.
According to the present embodiment, since the deposition gas supply amount is uniform for all the wafers, it is not necessary to fill the processing chamber 201 with a dummy wafer that does not require deposition when performing the deposition process ( (Dummy-less), the deposition gas is allowed to flow only in the gas introduction compartment where the product wafer to be deposited exists, and the other gas introduction compartment is not filled with the dummy wafer, and the purge gas is allowed to flow from the gas introduction compartment. It is possible to form a film by adjusting the gas flow rate. In addition, by performing gas introduction for each gas introduction section and providing a flow rate control means for each, and controlling the gas introduction flow rate, film formation in each section can be managed more.
As a result, the amount of film forming gas used is kept low, and a dummy wafer for filling is not required, so that the operating cost (running cost) can be greatly reduced. Further, by performing exhaust for each gas exhaust section, and providing automatic pressure control means for each section and performing automatic pressure control (APC), film formation in each section can be managed more.
Further, when the loading rate of the wafers 200 into the boat is low, the processing gas is introduced from the processing gas supply units 249a to 249h when the wafers 200 are disposed at the wafer processing space positions facing the gas introduction partition units 230a to 230h. When the wafer 200 is not disposed at the wafer processing space position opposite to the gas introduction compartments 230a to 230h, the inert gas can be introduced from the first inert gas supply units 250a to 250h. Can be reduced. That is, since the inert gas is supplied instead of the processing gas from the partition portion of the gas introduction pipe at the position where the wafer is not disposed, adhesion / deposition of reaction products in the reaction tube of the partition portion can be suppressed.

《Heater heating》
In addition, since the processing gas is heated by the first heating element 266 and the second heating element 267 in the running region in the gas introduction section 230a to 230h of the gas introduction pipe 230, the processing gas is sufficiently heated to a temperature at which it can react. Preheating can be performed, and wafer processing can be performed efficiently. Further, when a liquid raw material or a raw material that is liable to be liquefied at normal temperature and pressure is used as the gas raw material, liquefaction in the gas introduction pipe 230 can be prevented. Further, since the exhaust gas exhausted from the gas exhaust pipe 231 is heated by the third heating element 268, adhesion of reaction products in the gas exhaust pipe 231 can be prevented.
Further, in addition to the first heating element 266, the heating element 206 is provided with a second heating element 267 and a third heating element 268, whereby the gas introduction pipe 230 and the gas exhaust pipe 231 are introduced into the heater 206. Even when the tube notch is formed, the second heat generating element 267 and the third heat generating element can be controlled separately from the main first heat generating element 266 with respect to the escape of heat from the introduction port and the exhaust port. Since the body 268 is provided, it is possible to effectively suppress the occurrence of a cold spot in the notch for the gas introduction pipe.

《Improved pressure resistance and heat resistance》
In addition, since the partition walls 228 and 229 are provided in the vertical direction inside each of the gas introduction pipe 230 and the gas exhaust pipe 231, the gas introduction pipe 230 and the gas exhaust pipe 231 and thus the reaction tube 203 to which these are connected. Withstand pressure and heat resistance can be improved.

<< Modification of First Embodiment >>
Although the first embodiment has been described above, the present invention can be variously modified.

<< Modifications of gas introduction pipe and gas exhaust pipe >>
In the first embodiment, as shown in FIG. 3, the vertically elongated oval pipe is vertically moved by the partition walls 228 and 229 in one gas introduction pipe 230 and one gas exhaust pipe 231. Although the case where the plurality of gas introduction partition portions 230a to 230h and the gas exhaust partition portions 231a to 231h are integrally provided by partitioning in the direction has been described, the present invention is not limited to this.
For example, as in the first modification shown in FIG. 4, a plurality of cylindrical gas introduction pipes 230 and gas exhaust pipes 231 are arranged in the vertical direction of the reaction pipe 203, respectively, with common flanges 232 and 233. A plurality of gas introduction compartments 230a to 230h and gas exhaust compartments 231a to 231h may be provided independently by bonding.
Alternatively, as in the modification shown in FIG. 5, a gas inlet pipe 230 or a gas exhaust pipe 231 is provided with a plurality of partition portions integrally provided, and a plurality of partition portions are independently provided on either one of them. You may make it use what was provided. In FIG. 5A, a gas introduction pipe 230 integrally provided with a plurality of gas introduction compartments 230 a to 230 h is used, and a plurality of gas exhaust compartments 231 a to 231 h are provided independently on the gas exhaust pipe 231. The 2nd modification using the thing is shown. Further, in FIG. 5B, a gas introduction pipe 230 provided with a plurality of gas introduction compartments 230 a to 230 h is used, and a plurality of gas exhaust compartments 231 a to 231 h are integrated with the gas exhaust pipe 231. Each of the third modified examples using what is provided in FIG.
Further, the shapes of the gas introduction pipe 230 and the gas exhaust pipe 231 are not limited to those illustrated in FIGS. 3 to 5. Further, the arrangement and the number of the partition portions are not limited to those in the illustrated example.

<Plasma excitation>
By the way, in the CVD method, there is a case where a processing gas is plasma-excited and introduced into a reaction tube in order to increase the reactivity. FIG. 6 is a cross-sectional view of a processing furnace of a fourth modified example having such a plasma excitation function.
As shown in FIG. 6, a plasma generation source 274 is provided in the gas introduction tube 230. The plasma generation source 274 is provided on the opposite side of the gas introduction tube 230 from the reaction tube connection portion so as to avoid interference with the second heating element 267 provided on the reaction tube connection portion side of the gas introduction tube 230. The plasma generation source 274 has a parallel plate electrode 275, for example. The parallel plate electrodes 275 are provided along the flat side wall surfaces of the gas introduction tube 230 so as to sandwich the left and right sides of the gas introduction tube 230.
As shown in FIG. 7, the plasma generation source 274 is supplied with, for example, an AC power supply 277, an LC circuit 279 that oscillates a voltage signal of the AC power supply 277 boosted by the transformer 278, and oscillation power from the LC circuit 279. Parallel plate electrode 275.
Plasma is generated in the gas run-up region of each gas introduction section of the gas introduction pipe 230 by the plasma generation source 274 described above. The gas introduced from the gas introduction pipe 230 is excited by the plasma generated in the gas run-up region. A film is formed on the wafer 200 by the excitation gas with enhanced reactivity and exhausted from the gas exhaust pipe 231.
As described above, since the parallel plate electrode 275 is arranged outside the processing chamber so as to sandwich the vertically long elliptical gas introduction tube 230, the introduced gas is converted into plasma by the gas introduction tube 230, and the plasma-excited gas is then applied to the substrate. Can be easily supplied.

《Reduction of deposition gas usage》
By the way, as in the fifth modified example shown in FIG. 8, generally, a cylindrical reaction tube 203 having a processing chamber capable of processing a plurality of wafers 200 is formed in a dome shape at the upper portion thereof to react. The tube 203 is configured to satisfy the pressure strength. For this reason, there is a problem that the deposition gas flows into the upper space 208 of the dome-shaped reaction tube 203 and is exhausted without contributing to the deposition. In particular, when the reaction tube 203 is a side flow type, since the flow of the film forming gas occurs in the uppermost compartment, the amount of film forming gas used in this compartment increases, and the gas flowing in the compartments of the other stages The flow rate balance with the flow rate becomes a problem. Further, there is the deposition gas flows into the upper space 208, a problem that the reaction product on the inner wall of the upper space 208 from being deposited-deposited.

  Therefore, in the fifth modification shown in FIG. 8, the top plate 217 b of the boat 217 is arranged at the same height as the upper end of the gas introduction pipe 230. According to this, since the top plate 217b of the boat 217 is arranged at the same height as the upper end of the gas introduction pipe 230, the side flow of the processing gas supplied from the gas introduction pipe 230 into the reaction pipe 203 is disturbed. As a result, the processing gas can be made difficult to flow upward from the top plate 217b of the reaction tube 203.

  However, in the fifth modification shown in FIG. 8, there is still room for improvement because the path (gas flow space) to the upper space 208 of the reaction tube 203 is not blocked.

  Therefore, in this improved embodiment, the top plate 217b of the boat 217 is arranged at the same height as the upper end of the gas introduction tube 230, and the upper portion of the reaction tube 203 is positioned above the wafer processing space 204. A gas blocking part for blocking the flow of gas into the space 208 is provided. In this case, the gas blocking part may be provided inside the reaction tube 203 or may be configured as an outer wall of the reaction tube 203. If a gas blocking part is provided above the wafer processing space 204 of the reaction tube 203, the processing gas does not flow above the wafer processing space 204 of the reaction tube 203, so that the above-described problems can be solved.

  When a gas blocking unit is provided above the wafer processing space 204 of the reaction tube 203, the gas blocking unit extends in a direction perpendicular to the processing surface of the wafer 200 to reinforce the tube wall of the reaction tube 203. A reinforcing member is provided. This is because the pressure blocking strength of the reaction tube 203 can be improved by providing the gas blocking portion with the reinforcing member.

  Now, as the gas blocking part provided above the wafer processing space 204 of the reaction tube 203, for example, as in the sixth modification shown in FIG. 9, a partition plate as a gas blocking part Some have 282 between the upper space (upper region) 208 and the wafer processing space (wafer processing region) 204 of the reaction tube 203. A reaction tube 203 extending in a direction perpendicular to the processing surface of the wafer 200 between the partition plate 282 and a tube wall of the reaction tube 203 extending in a direction perpendicular to the processing surface of the wafer 200. A plurality of ribs 283 are provided as reinforcing members for reinforcing the tube wall. Thus, when the partition plate 282 is provided inside the reaction tube 203, the existing reaction tube 203 having a dome-shaped upper portion can be effectively used.

  For example, the gas blocking part is configured as the outer wall of the reaction tube 203. For example, as in the seventh modification shown in FIG. Some have a gas shut-off section. A rib 285 as a reinforcing member is erected outside the flat upper portion 284. As described above, when the flat upper portion 284 forms the tube wall of the reaction tube 203, the structure of the reaction tube 203 can be simplified as compared with that in FIG.

By using the reaction tube 203 that satisfies the pressure strength using the ribs 283 and 285 of the sixth and seventh modifications as described above, the processing gas supplied from the gas introduction tube 230 into the reaction tube 203 can be changed. Further, it is possible to make it difficult to flow upward from the top plate 217b of the reaction tube 203. Therefore, the amount of film forming gas used and the number of cleaning steps for the reaction product adhering to the wall surface facing the upper space 208 can be reduced. In addition, the amount of cleaning gas used can be reduced.

In the sixth and seventh modified examples shown in FIGS. 9 and 10 described above, the partition plate 282 reinforced by ribs 283 and 285 as means for preventing the film forming gas from flowing into the upper space 208 of the reaction tube 203. Although the flat upper portion 284 is provided, the present invention is not limited to this.
For example, in the eighth modification shown in FIG. 11, the top plate 217 b of the boat 217 is arranged at the same height as the upper end of the gas introduction pipe 230 as marked with a circle, and then the top plate 217 b of the boat 217 is arranged. Is made at least larger than the size of the wafer 200, and the gap between the top plate 217b and the inner wall of the reaction tube 203 is made small. Preferably, the outer diameter of the top plate 217b is made larger than the cylindrical diameter of the cylindrical column in which the plurality of columns 217a are arranged, so that the gap with the inner wall of the reaction tube 203 is made smaller.
In the ninth modification shown in FIG. 12, the top plate 217 b of the boat 217 is arranged at the same height as the upper end of the gas introduction pipe 230 as marked by a circle, and then the upper end of the gas introduction pipe 230. Has a projecting portion 234 protruding radially inward from the inner wall surface of the reaction tube 203 to reduce the gap with the top plate 217b.
According to the eighth and ninth modified examples, the pressure resistance of the reaction tube 203 cannot be improved as compared with the sixth and seventh modified examples, but the film forming gas is in the upper space of the reaction tube 203. It is possible to prevent the flow into 208 with a simple configuration.
As shown in FIG. 12, if the upper end of the gas exhaust pipe 231 also has a protrusion 234 that protrudes inward from the inner wall surface of the reaction tube 203, the processing gas exhausted from the reaction tube 203 to the gas exhaust pipe 231 is reduced. The flow into the upper space 208 of the reaction tube 203 can be made difficult.

In the above-described embodiment, the gas flowing into the upper space 208 of the reaction tube 203 is considered as a problem. However, the gas flow is generated not only in the upper space 208 but also in the lower space 210 of the reaction tube 203.
Therefore, as in the tenth modification shown in FIG. 13, the bottom plate 217 c of the boat is arranged at the same height as the lower end of the gas introduction pipe 230. According to this, since the bottom plate 217c of the boat 217 is disposed at the same height as the lower end of the gas introduction pipe 230, the processing gas supplied from the gas introduction pipe 230 into the reaction pipe 203 is supplied to the bottom plate 217c of the reaction pipe 203. It can be made difficult to flow downward.
However, in the tenth modification shown in FIG. 13, there is still room for improvement because the path (gas flow space) to the lower space 210 of the reaction tube 203 is not blocked.

Therefore, as in the eleventh modification shown in FIG. 14, the outer diameter of the bottom plate 217c of the boat 217 is made at least larger than the size of the wafer 200, and the gap between the bottom plate 217c and the inner wall of the reaction tube 203 is made small. Preferably, the gap between the bottom plate 217c and the inner wall of the reaction tube 203 is made smaller by making the outer diameter of the bottom plate 217c larger than the cylindrical cylindrical diameter in which a plurality of columns 217a are arranged.
In the twelfth modification shown in FIG. 15, the bottom plate 217 c of the boat 217 is arranged at the same height as the lower end of the gas introduction pipe 230, and the lower end of the gas introduction pipe 230 is smaller in diameter than the inner wall surface of the reaction pipe 203. A protrusion 244 that protrudes inward in the direction is provided to reduce the gap with the bottom plate 217c. Accordingly, it is possible to make it difficult for the processing gas supplied from the gas introduction pipe 230 into the reaction tube 203 to flow into the reaction tube 203 and below the bottom plate 217 c of the boat 217.
In addition, as shown in FIG. 15, if the lower end of the gas exhaust pipe 231 has a protruding portion 244 that protrudes inward from the inner wall surface of the reaction tube 203, the processing gas exhausted from the reaction tube 203 to the gas exhaust pipe 231 can be reduced. Further, it is possible to make it difficult to flow below the bottom plate 217c of the reaction tube 203.
Therefore, the amount of film forming gas used and the number of cleaning steps for the reaction product adhering to the wall surface facing the lower space 210 can be reduced. In addition, the amount of cleaning gas used can be reduced. In addition, when the upper and lower ends of the gas introduction pipe 230 and the gas exhaust pipe 231 have protrusions 244 that protrude inward from the inner wall surface of the reaction tube 203, a boat that arranges a plurality of wafers 200 in a direction perpendicular to the wafer processing surface. Compared with the case of forming 217, the structure becomes easier.

《Purge gas》
According to the embodiment as described above, it is possible to reliably prevent the gas from flowing into the upper space 208 or the lower space 210 of the reaction tube 203. However, there is still room for improvement in order to more reliably prevent the gas from flowing into the upper space 208 or the lower space 210 of the reaction tube 203.
Therefore, in the thirteenth modification shown in FIG. 16, a gas nozzle 247 for introducing a purge gas is provided as a second inert gas supply unit separately from the gas introduction pipe 230 for film forming gas. The gas nozzle 247 extends from the lower side of the reaction tube 203 along the outer wall of the reaction tube 203 and communicates with the upper space 208 at the dome-shaped top. A shower plate 243 having a large number of holes is provided in the upper space 208 in the reaction tube 203. An inert gas such as N ₂ gas is introduced from the gas nozzle 247 into the upper space 208 of the reaction tube 203 as indicated by an arrow,
The film is supplied onto the top plate 217b of the boat 217 through a large number of holes provided in the shower plate 243, thereby preventing the deposition gas from flowing upward from the top plate 217b. The second inert gas supply unit is provided to supply gas to the upper space 208 in the reaction tube 203 via the shower plate 243, but the gas supply method is not limited to this. In short, the second inert gas supply unit may be provided so as to be able to supply the inert gas above the wafer processing space of the reaction tube 203.
More preferably, a gas supply pipe 248 as a third inert gas supply unit is connected to the seal cap 219 so as to communicate with the inside of the processing chamber 201, and as indicated by an arrow, an inert gas, For example, N ₂ gas or the like may be introduced to prevent the deposition gas from flowing into the lower space 210 of the bottom plate 217c of the boat 217. The third inert gas supply unit is provided so as to supply gas from the gas supply pipe 248 connected to the seal cap 219, but the gas supply method is not limited to this. In short, the third inert gas supply unit may be provided so as to supply the inert gas below the wafer processing space of the reaction tube 203.

By introducing purge gas from the upper and lower parts of these reaction tubes 203, purge gas is supplied from a direction opposite to the direction of film formation gas supply / exhaust, and the film formation gas supply to an area different from the wafer processing area is shut off. Since the film formation gas flow rate is adjusted for film formation, the amount of film formation gas used, the cleaning process of the reaction product adhering to the wall surface, or the amount of cleaning gas used can be further reduced.
The introduction of the purge gas from the upper part or / and the lower part of the reaction tube 203 is preferably performed not only at the time of film formation but also at the time of purging after film formation or returning to the atmosphere, thereby reducing the film formation time. Can do. Further, in the above embodiment, the film formation in the reduced pressure has been described, but the pressure in the furnace is not limited to the heat treatment, and for example, the film formation under the atmospheric pressure, oxidation, annealing treatment, etc. Common.

FIG. 22 is a schematic configuration diagram of a processing furnace 202 of a vertical semiconductor manufacturing apparatus as a substrate processing apparatus suitably used in the second embodiment of the present invention, and is shown as a vertical cross-sectional view.
<Processing furnace>
The processing furnace shown in FIG. 22 is described as a mode different from the processing furnace shown in FIG. The basic configuration of the processing furnace is the same as the corresponding components of the processing furnace of the first embodiment described above with reference to FIG. 22 differs from FIG. 1 in that the partition wall is provided on the boat as well as the gas introduction pipe and the gas exhaust pipe. FIG. 23 is an enlarged view of the main part of the processing furnace 202. FIG. 24 is a cross-sectional view of the processing furnace 202.

《Division wall》
The boat 217 is provided with a processing partition wall 221 that partitions the boat 217 into a plurality of vertical directions with respect to the processing surface of the wafer 200. For example, the processing partition walls 221 of the boat 217 are equally arranged in the vertical direction with respect to the processing surface of the wafer 200. Each processing partition wall 221 is formed in a disk shape having the same diameter as the bottom plate 217c and the top plate 217b of the boat 217, for example.
Specifically, as shown in FIG. 23, each processing partition wall 221 is more radially outward than the plurality of columns 217a arranged in a cylindrical shape so as to face the inner wall of the cylindrical reaction tube 203. It sticks out. The boat 217, in other words, the wafer processing space 204 is partitioned into a plurality of processing partition sections 220 in the vertical direction by these processing partition walls 221, and gas flows through each processing partition section 220. In the illustrated example, the wafer processing space 204 has processing partition portions 220 a to 220 h divided into eight by processing partition walls 221, and thereby, from one processing partition portion 220 to another processing partition portion 220. Alternatively, introduction of the film forming gas from another processing partition unit 220 to the one processing partition unit 220 can be suppressed. Therefore, a more uniform processing of a large number of wafers 200 is possible.

The plurality of wafers 200 are respectively supported in a horizontal state by grooves 217d as a plurality of substrate support portions formed on the plurality of support columns 217a of the boat 217, respectively.
For example, as shown in FIG. 25, a plurality of grooves 217d are formed in each of a plurality of support columns 217a so that a plurality of wafers 200 can be supported in each of processing partitions 220 adjacent vertically. It is preferable that the intervals between the plurality of grooves 217d provided in each of the plurality of support columns 217a of the processing partition units 220 adjacent to each other in the upper and lower sides are formed so that the intervals between the plurality of wafers 200 are equal.
In addition, a plurality of grooves 217d are formed in each of the plurality of support columns 217a so that the plurality of wafers 200 can be supported between the processing partition walls 221 adjacent to each other in the vertical direction (vertical direction in FIG. 25) with respect to the processing surface of the wafer 200. Forming. The interval between the plurality of grooves 217d provided in each of the plurality of columns 217a between the processing partition walls 221 adjacent in the vertical direction (vertical direction in FIG. 25) with respect to the processing surface of the wafer 200 is set with respect to the processing surface of the wafer 200. It is preferable that the plurality of wafers 200 supported between the processing partition walls 221 adjacent in the vertical direction (vertical direction in FIG. 25) are formed uniformly so as to be even.
Note that the substrate support portion is not limited to the groove formed by dropping from the surface of the support column 217a to the inside, and may be a protrusion or a protrusion formed by protruding from the surface of the support column 217a.

  Further, each processing partition wall 221 of the boat 217 and each introduction pipe partition wall 228 corresponding to each processing partition wall 221 are arranged at the same height so that gas can be introduced into each partition. Further, the processing partition wall 221 and the introduction pipe partition wall 228 of the boat 217 are formed to have the same thickness so that gas can be introduced as much as possible in each section without leakage. If each processing partition wall 221 and each introduction pipe partition wall 228 of the boat 217 have the same height and the same thickness, it becomes easy to partition the gas introduction partition.

  In addition, by disposing the processing gas supply units 249a to 249h and the inert gas supply units 250a to 250h in the center portions of the respective gas introduction partition units 230a to 230h, that is, in the middle between the introduction pipe partition walls 228, Gas can be supplied to each of the plurality of wafers 200 between the processing partition walls 221 more evenly.

Further, each processing partition wall 221 of the boat 217 and each gas exhaust pipe partition wall 229 corresponding to each processing partition wall 221 are arranged at the same height so that gas can be exhausted for each section. Further, the thickness of the processing partition wall 221 and the gas exhaust pipe partition wall 229 of the boat 217 is formed to be the same thickness so that the gas can be exhausted as much as possible without leakage for each section.

  Further, it is not necessary that all the wafers 200 arranged in the vertical direction in the substrate processing region 224 partitioned between the processing partition walls 221 are product wafers. For example, the uppermost and lowermost wafers 200 in the substrate processing region 224 may be dummy wafers instead of being product wafers. By providing a dummy wafer, the intermediate wafer can be uniformly processed without wasting the product wafer.

<< Effects of Second Embodiment >>
As described above, according to the second embodiment, one or more of the following effects are exhibited.

<< Improved uniformity of in-plane and inter-film thickness >>

  Since the processing partition wall 221 for partitioning the boat 217 into a plurality of parts in the direction perpendicular to the processing surface of the wafer 200 is provided on the boat 217, the film forming gas is allowed to flow for each processing partition unit 220 partitioned by the processing partition wall 221. be able to. Moreover, since one processing partition part 220 and the other processing partition part 220 are partitioned by the processing partition wall 221, unnecessary gas flow into and out of the processing partition part 220 is suppressed. It is possible to obtain an appropriate gas flow rate. Therefore, the loading effect can be prevented, and the processing uniformity within and between the surfaces of the plurality of wafers 200 processed at a time can be further improved.

Further, the gas introduction pipe 230 and the gas exhaust pipe 231 also include an introduction pipe partition wall 228 and an exhaust pipe partition wall 229 that partition the gas introduction pipe 230 and the gas exhaust pipe 231 into a plurality of directions perpendicular to the processing surface of the wafer 200. Since each is provided, it can be introduced into each processing partition 220 from the horizontal direction and exhausted (can be a side flow).
That is, the gas introduction pipe 230 and the gas exhaust pipe 231 are partitioned into a plurality in a direction perpendicular to the processing surface of the wafer 200, and the deposition gas flows into the partitioned gas introduction partition sections 230a to 230h. become. Further, the processing gases introduced from the plurality of gas introduction compartments 230a to 230h of the gas introduction pipe 230 are exhausted from the plurality of gas exhaust compartments 231a to 231h of the gas exhaust pipe 231, respectively, and are indicated by arrows. As described above, the deposition gas flows in parallel at a plurality of locations in the vertical direction of the wafer processing space 204. Accordingly, the processing gas can be supplied to the wafer 200 from the horizontal direction and exhausted from the horizontal direction, so that the processing gas is smoothly supplied between the wafers 200. Therefore, the loading effect can be prevented, and the processing uniformity within and between the surfaces of the plurality of wafers 200 processed at a time can be further improved.

  Further, since each partition wall is provided in a direction perpendicular to the processing surface of the wafer 200, the gas introduced from the gas introduction pipe 230 is introduced in a direction parallel to the processing surface of the wafer 200. It becomes easy to flow between the wafers 200. Further, the gas introduction pipe 230 and the gas exhaust pipe 231 are arranged on a straight line passing through the diameter of the wafer 200 arranged in the reaction tube 203 to be a gas running region before the gas reaches the inside of the reaction tube 203. Since the gas introduction compartments 230 a to 230 h are in a direction parallel to the processing surface of the wafer 200, the gas can flow more easily between the wafers 200. Therefore, the loading effect can be prevented, and the processing uniformity within and between the surfaces of the plurality of wafers 200 processed at a time can be further improved.

Further, since the processing partition wall 221, the gas introduction pipe partition wall 228 and the gas exhaust pipe partition wall 229 of the boat 217 are opposed to each other with the same number and the same height, the film forming gas is evenly distributed between the processing partition portions. It can flow. In addition, since the wafers 200 are evenly arranged in the processing compartments 220 formed in the boat 217, the deposition gas can be made to flow evenly between the wafers 200 in the processing compartments. Therefore, the loading effect can be prevented, and the processing uniformity within and between the surfaces of the plurality of wafers 200 processed at a time can be further improved.

  As described above, according to the second embodiment, since the processing partition wall 221 is also provided in the boat 217, the processing uniformity within and between the surfaces of a plurality of wafers processed at a time can be improved. However, for example, when the processing partition wall 221 is not provided in the boat 217, there is a possibility that a flow path 227 perpendicular to the wafer processing surface is formed between the reaction tube 203 and the boat 217. Therefore, in the processing chamber 201, in addition to the horizontal gas flow, a vertical flow through the flow path 227 is also formed. That is, when the processing partition wall 221 is not provided on the boat 217, the deposition gas flows out from one processing partition section 220 to another processing partition section 220 or another processing section in the processing chamber 201. The introduction of the film forming gas from the part 220 to the one processing partition part 220 cannot be suppressed. For this reason, the flow rate of the film forming gas is different between the processing compartments 220 and affects the film thickness uniformity between the wafer surfaces in the processing compartments and between the wafer surfaces between the processing compartments. In the embodiment described above, such a problem can be solved.

  Further, according to the second embodiment, since the gas flow is set to the side flow, the gas introduction pipe is provided on the side surface of the reaction tube, so that the maintenance performance is greatly improved as compared with the case where the gas nozzle is provided. To be improved. Further, since the gas introduction pipe is provided outside the wafer processing space, adhesion and deposition of reaction products do not occur compared to the case where it is provided in the wafer processing space. In addition, according to the second embodiment, since the processing gas or the inert gas can be selectively introduced from each partition portion of the gas introduction pipe, the film formation conditions can be changed without changing the gas introduction pipe. It is possible to cope with the change and the conditions under which the film can be formed are not limited. Therefore, it is possible to improve the processing uniformity within and between the surfaces of a plurality of substrates processed at a time only by performing desired maintenance or replacement for the gas introduction pipe.

<< Modification of Second Embodiment >>
While the second embodiment has been described above, various modifications can be made to the present invention.

《Process partition wall shape, arrangement and number》
In the above-described embodiment, the processing partition walls provided in the boat are formed in a disk shape, and the arrangement and number of the processing partition walls are exemplified, but the shape, arrangement, and number of the processing partition walls are not limited thereto.

《Assembly boat》
In the above-described embodiment, the boat 21 is an integrated body, but an assembly that can be disassembled in units of processing sections may be used. For example, the boat 217 is a laminated body of boat components. A boat is assembled by arranging a plurality of boat components so that other boat components are sequentially placed on one boat component.

  For example, as in the first modification shown in FIG. 26, the basic configuration of the boat 217 is the same as described above. The boat 217 includes boat components 290 having the same shape obtained by dividing the boat 217 in the height direction. The boat component includes a plurality of short columns 290a arranged in a cylindrical shape so as to support the outer peripheral portion of the wafer 200, a disk-shaped top plate 290b that closes an upper portion between the plurality of short columns 290a, and a plurality of It has a disk-shaped bottom plate 290c that closes the lower part between the short columns 290a. A plurality of substrate support portions for supporting the outer peripheral portion of the wafer 200 are cut in the side surfaces of the plurality of short columns 290a.

  When the other boat component is placed on one boat component 290, the top plate 290b is engaged with the top plate 290b of one boat component 290 and the bottom plate 290c of the other boat component 290b. A convex engaging portion 291 is provided, and a concave engaged portion 292 is provided on the bottom plate 290c. The engaged portion 292 may be provided on the top plate 290b, and the engaging portion 291 may be provided on the bottom plate 290c. Further, in order to sequentially connect the short columns 290a of the boat component 290, the upper part of the short column 290a of one boat component and the lower part of the short column 290a of the other boat component are fitted. In addition, a through-hole is provided in the upper part of the short column 290a, and a protruding part that protrudes from the lower surface of the bottom plate 290c is provided in the lower part of the short column 290a. Note that a protruding portion may be provided at the upper portion of the short column 290a, and a bored hole may be provided at the lower portion of the short column 290a.

  The top plate 290b and the bottom plate 290c described above constitute a processing partition wall. When the other boat components 290 are sequentially placed on one boat component 290, a laminated boat is assembled. The processing partition wall in the middle part of the boat excluding the bottom plate 290c and the top plate 290b of the assembled boat is composed of the top plate 290b of one boat component 290 and the bottom plate 290c of the other boat component 290 that rides on it. The two-sheet structure.

  In this way, a boat can be constituted by a plurality of boat components 290, and the boat can be partitioned by the top plate 290b and the bottom plate 290c that serve as boundaries between the boat components 290 by stacking the boat components 290. is there. According to this embodiment, the number of stacked boat components can be easily changed according to the number of processed wafers.

《Gas exhaust pipe》
In the above embodiment, the gas exhaust pipe as well as the gas inlet pipe is provided on the side surface of the reaction tube in the substrate processing region. However, the present invention is not limited to this. Compared with the case where the gas exhaust pipe is provided on the side surface of the reaction tube in the substrate processing region, the in-plane uniformity of the wafer and the uniformity between the surfaces are slightly inferior. For example, as in the second modification shown in FIG. In addition, when the reaction vessel includes the reaction tube 203 and the manifold 209, the gas introduction tube 230 may be provided on the side surface of the reaction tube 203, and the gas exhaust tube 231 may be provided on the manifold 209. In this case, it is preferable that the gas introduction tube 230 provided on the side surface of the reaction tube 203 is provided with introduction tube partition walls 228 so as to be partitioned into a plurality of portions in a direction perpendicular to the processing surface of the wafer 200. In addition, this modification is applicable to all the 1st-3rd embodiment.

《Processing partition wall》
Further, in the above-described embodiment, each processing partition wall 221 provided in the boat 217 is formed in a disk shape having the same diameter as the bottom plate 217c and the top plate 217b of the boat 217. It is not limited to. The processing partition wall should be at least larger than the wafer size, and preferably larger than the outer peripheral side of the column so as to surround the boat column. In this case, instead of increasing the diameter of the processing partition wall of the boat, the partition walls of the gas introduction pipe 230 and / or the gas exhaust pipe 231 may be projected.

FIG. 28 shows a third modification in which the partition wall of such a gas introduction pipe 230 and / or a gas exhaust pipe 231 is projected.
After the processing partition wall 221 of the boat and the introduction tube partition wall 228 are arranged at the same height, the introduction tube partition wall 228 has a protrusion 228 a that protrudes inward from the inner wall surface of the reaction tube 203. Further, after arranging the processing partition wall 221 and the exhaust pipe partition wall 229 of the boat 217 at the same height, the exhaust pipe partition wall 229 has a protruding portion 229 a that protrudes radially inward from the inner wall surface of the reaction tube 203. .
The processing partition wall 221 provided in the boat 217 may be formed to extend from the outer peripheral side of the plurality of columns 217a to the outside, but the introduction pipe partition wall 228 and / or the exhaust pipe partition wall 229 may be formed as the reaction tube 2.
If the protrusions 228a and 229a projecting radially inward from the inner wall surface of 03 are provided, the structure of the reaction tube is facilitated.

  Next, a third embodiment of the substrate processing apparatus of the present invention will be described with reference to FIG. The processing furnace shown in FIG. 29 is schematically described as a mode different from the processing furnace shown in FIG. The basic configuration of the processing furnace is the same as the corresponding components of the processing furnace of the second embodiment described above with reference to FIG. 29 differs from FIG. 22 in that a temperature sensor 270 serving as a temperature detector is accommodated in the protruding portion 244 provided in the gas introduction pipe 230 and the gas exhaust pipe 231. FIG. 30 is a cross-sectional view of the processing furnace before housing the temperature sensor, FIG. 31 is a vertical cross-sectional view taken along the line AA ′ of FIG. 30, and FIG. 32 is a cross-sectional view of the processing furnace after housing the temperature sensor. .

  A temperature sensor 270 as a temperature detector for measuring the temperature of the wafer processing space 204 is installed in the reaction tube 203 of such a processing furnace. The temperature sensor extends in a direction perpendicular to the wafer processing surface of the plurality of wafers 200 arranged. A temperature controller (see reference numeral 238 in FIG. 17) is electrically connected to the temperature sensor 270. The temperature control unit is configured to control each zone of the heater 206 divided into zones in the vertical direction. The temperature control unit controls the temperature of the wafer processing space 204 at a desired timing by adjusting the power supply to the heater 206 based on the temperature information detected by the temperature sensor 270 so that the temperature of the wafer processing space 204 becomes a desired temperature. It is configured.

  Further, the gas introduction pipe 230 and the gas exhaust pipe 231 have projecting portions 244 that protrude radially inward from the inner wall surface of the reaction tube 203 at least at the upper end and the lower end. In the illustrated example of FIGS. 30 and 31, the protruding portion 244 is configured by a ring 244 a that is integrally provided along the inner wall surface of the reaction tube 203. The ring 244a is provided not only at the upper and lower ends of the gas introduction pipe 230 and the gas exhaust pipe 231 but also at the intermediate portion. These rings 244a include a gas introduction pipe partition wall 228 of each gas introduction section including the upper and lower ends of the gas introduction pipe 230, and a gas exhaust pipe including the upper and lower ends of the gas exhaust pipe 231 corresponding to the horizontal direction. It arrange | positions so that the gas exhaust pipe division wall 229 of a division part may be connected in the same surface.

Each ring 244a is provided with a plurality of notches 252 for accommodating a temperature sensor 270 for detecting the temperature in the processing chamber 201 at the same position in the circumferential direction perpendicular to the processing surface of the wafer. . The plurality of notches 252 are provided at a plurality of locations excluding the position on the center line connecting the gas introduction pipe 230 and the gas exhaust pipe 231 so that the temperature sensor accommodated in the notch 252 does not obstruct the gas flow. Provided.
As shown in FIG. 32, in each of the rings 244a provided in the vertical direction, a plurality of temperature sensors 270 are accommodated in the vertical direction in the notch portions 252 at the same position in the vertical direction.

As described above, the processing furnace according to the third embodiment is provided with the rings 244a protruding inward from the inner wall surface of the reaction tube 203 in each partition, and these rings 244a are arranged evenly in the vertical direction of the reaction tube 203. Has been. Therefore, the gas introduced into the reaction tube 203 from the gas ejection port 212 flows evenly to each wafer 200. Further, since the ring 244a protrudes inside the reaction tube 203 and fills a part of the unnecessary gas flow space 215 between the wafer 200 and the reaction tube 203, the unnecessary gas flow space 215 is reduced, and the ring 244a moves inside and outside the partition portion. Unnecessary gas flow is suppressed. Therefore, the introduced gas flow rate is a gas flow rate appropriately used for film formation.
Further, since the ring 244a has a notch 252 and the temperature sensor 270 can be stored in the notch 252, the temperature sensor 270 can be prevented from falling down or misaligned, and the temperature sensor installation position can be reproduced. The nature also increases. Therefore, the temperature sensor 270 can detect an appropriate temperature.

  Incidentally, in the above-described embodiment, the gas ejection port 212 for ejecting gas from the gas introduction pipe 230 to the processing chamber 201 is provided in a slit shape. The size of the slit is set so as to extend over at least a plurality of wafers 200 in a direction perpendicular to the wafer processing surface. It is known that the gas flow condition, the gas temperature distribution, and the like vary depending on the ratio of the vertical and horizontal lengths of the gas outlet 212, the ratio of the width of the gas outlet 212 and the length of the gas introduction pipe 230, and the like. Therefore, it is preferable that the optimum form of the gas outlet 212 having the slit shape can be specified. Therefore, a gas flow rate simulation in the reaction tube was performed using the shape of the gas outlet 212 as a parameter so that the optimum shape of the gas outlet 212 having a slit shape can be specified.

  FIG. 33 is a simulation model diagram, and FIGS. 34 and 35 are explanatory diagrams of simulation results.

  The model shown in FIG. 33 is a reaction tube model in which only one gas introduction section (for example, 230a) and gas exhaust section (for example, 231a) are extracted from the gas introduction pipe 230 and the gas exhaust pipe 231. In the gas introduction section 230a and the gas exhaust section 231a, a gas ejection port 212 and a gas ejection port 213 are provided in a slit shape so as to straddle the eight wafers 200, respectively. Two gas introduction pipes 214 were connected to the gas introduction section 230a. The distance between the wafer 200 and the inner wall of the reaction tube 203 was fixed to 5 mm, and the height b of the side surface of the reaction tube 203 provided with the gas introduction section 230a and the gas exhaust section 231a was fixed to 90 mm. Dimensions a and c were used as parameters. The dimension a is the inner width of the gas introduction pipe 230 or the inner width of the gas exhaust pipe 231, or the width of the gas outlet 212 or the width of the gas discharge port 213, and the dimension c is the length of the gas introduction pipe 230.

  34 and 35 are side cross-sectional views showing the gas flow rate results at the center in the vertical direction of the reaction tube 203 (at a height of 45 mm from the bottom). The gas flow rate is displayed by the dither method. As illustrated as a representative example in FIG. 35, among the plurality of zones represented by the dither method, the zone B that is blacker has a higher gas flow rate, and the gray zones G1, G2, G3, and G4 having different shades are the reaction tubes. (B> G1> G2> G3> G4). Moreover, the gas flow rate is a scalar display.

  FIG. 34 is a diagram showing a simulation result when a 300 mm diameter wafer is processed. The gas flow rate of 0.5 L / min respectively supplied from the two pipes and the gas pressure of the gas exhausted from the gas exhaust pipe were 30 Pa.

In FIG. 34A, the lengths of the gas introduction pipe and the gas exhaust pipe are 190 mm each, and the inner width of the gas introduction pipe and the gas exhaust pipe and the width of the gas outlet and the gas outlet are 20 mm with respect to the 300 mm wafer. It is said. In other words, the widths of the gas outlet and the gas outlet are 1/15 of the width of the wafer.
In this embodiment, the black portions are at the gas introduction pipe, the gas exhaust pipe, and the wafer center. That is, the gas ejected from the gas introduction outlet passes through the wafer center at the same flow velocity as that in the gas introduction pipe and reaches the gas exhaust pipe.
That is, if the inner width of the gas introduction pipe / gas exhaust pipe and the width of the gas jet outlet / gas exhaust outlet are set to 1/15 of the width of the wafer, the gas flow tends to be laminar. The amount of gas entering between the wafers can be made uniform. Therefore, a gas having a uniform gas concentration and gas velocity can be sent between the wafer surfaces, and the uniformity between the wafer surfaces and the in-plane film thickness is improved. Further, the gas can be supplied without reducing the gas flow velocity from the upstream end of the gas introduction pipe to the wafer.

In FIG. 34B, the lengths of the gas introduction pipe and the gas exhaust pipe are 190 mm and 300 m, respectively.
For the m wafer, the inner width of the gas introduction pipe / gas exhaust pipe and the width of the gas outlet / gas outlet are set to 100 mm. In other words, the widths of the gas outlet and the gas outlet are one third of the width of the wafer.
Even in this configuration, although the black zone range is smaller than that in (A), the black portion is in the gas introduction pipe, the gas exhaust pipe, and the wafer center as in (A). That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

In FIG. 34C, the length of the gas introduction pipe / gas exhaust pipe is 190 mm, and the inner width of the gas introduction pipe / gas exhaust pipe and the width of the gas outlet / gas outlet are 150 mm for a 300 mm wafer. It is said. In other words, the widths of the gas outlet and the gas outlet are half the width of the wafer diameter.
Even in this embodiment, the black zone range is smaller than in (A) and (B), but the black portion is in the gas introduction pipe, the gas exhaust pipe, and the wafer center as in (A). That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

In FIG. 34D, the length of the gas introduction pipe / gas exhaust pipe is 190 mm, and the inner width of the gas introduction pipe / gas exhaust pipe and the width of the gas outlet / gas outlet are 200 mm for a 300 mm wafer. It is said. In other words, the widths of the gas outlet and the gas outlet are two-thirds of the wafer diameter.
In this embodiment, the black portion is not at the wafer center. That is, the gas ejected from the gas ejection port passes through the center of the wafer at a lower flow velocity than inside the gas introduction pipe. Therefore, it becomes much more difficult to ensure the desired film thickness uniformity as compared with the above (A) to (C).

In FIG. 34E, the lengths of the gas introduction pipe and the gas exhaust pipe are each 285 mm, and the inner width of the gas introduction pipe and the gas exhaust pipe, and the width of the gas outlet and the gas outlet are 20 mm with respect to the 300 mm wafer. It is said.
Even in this configuration, although the black zone range is smaller than that in (A), the black portion is in the gas introduction pipe, the gas exhaust pipe, and the wafer center as in (A). That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

In FIG. 34 (F), the lengths of the gas introduction pipe and the gas exhaust pipe are each set to 95 mm, and the inner width of the gas introduction pipe and the gas exhaust pipe and the width of the gas outlet and the gas outlet are set to 20 mm with respect to the 300 mm wafer. It is said.
Even in this configuration, although the black zone range is smaller than that in (A), as in (A), the black portions are located in the gas introduction pipe, the gas exhaust pipe, and the wafer center as in (A). That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

In FIG. 34G, the lengths of the gas introduction pipe and the gas exhaust pipe are each 190 mm, and the inner width of the gas introduction pipe and the width of the gas outlet are 150 mm for a 300 mm wafer. Further, the inner width of the gas exhaust pipe and the width of the gas exhaust port are set to 20 mm.
Even in this configuration, although the black zone range is smaller than that in (A), the black portion is in the gas introduction pipe, the gas exhaust pipe, and the wafer center as in (A). That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

In FIG. 34H, the lengths of the gas introduction pipe and the gas exhaust pipe are each 190 mm, and the inner width of the gas introduction pipe and the width of the gas outlet are 20 mm with respect to a 300 mm wafer. The inner width of the gas exhaust pipe and the width of the gas exhaust port are 150 mm.
Even in this configuration, although the black zone range is smaller than that in (A), the black portion is at the center of the gas introduction pipe, gas exhaust pipe, and wafer as in (A). That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

  FIG. 35 is a diagram showing a simulation result when processing a wafer having a diameter of 450 mm. The gas flow rate was 1.125 L / min, which was about 2.25 times that of the 300 mm wafer, and the gas pressure of the gas exhausted from the gas exhaust pipe was 30 Pa, the same as that of the 300 mm wafer.

In FIG. 35A, the lengths of the gas introduction pipe and the gas exhaust pipe are 285 mm, respectively, and the inner width of the gas introduction pipe and the gas exhaust pipe and the width of the gas outlet and the gas outlet are 30 mm with respect to the 450 mm wafer. Yes. In other words, the widths of the gas outlet and the gas outlet are 1/15 of the width of the wafer.
In this embodiment, the black portions are at the gas introduction pipe, the gas exhaust pipe, and the wafer center. That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.

In FIG. 35 (B), the length of the gas introduction pipe / gas exhaust pipe is 285 mm, and the inner width of the gas introduction pipe / gas exhaust pipe and the width of the gas outlet / gas outlet are 225 mm for a 450 mm wafer. Yes. In other words, the widths of the gas outlet and the gas outlet are half the width of the wafer diameter.
Even in this configuration, although the black zone range is smaller than that in FIG. 34A, the black portions are in the gas introduction pipe, the gas exhaust pipe, and the wafer center as in FIG. That is, the gas ejected from the gas ejection port passes through the center of the wafer at the same flow rate as that in the gas introduction pipe and reaches the gas exhaust pipe.
The minimum width of the gas introduction pipe is preferably a minimum size of 6.35 mm to which the gas pipe can be connected.

What can be said from the simulation results described above is as follows.
The lateral width a of the gas outlet should be smaller than the diameter of the wafer. As a result, the gas can be supplied from the upstream end of the gas introduction pipe to the wafer without reducing the gas flow velocity.

  Preferably, a <b, where a is the lateral width of the gas outlet and b is the height. If a <b, the gas can be supplied without reducing the gas flow velocity from the upstream end of the gas introduction pipe to the wafer. In order to process a plurality of wafers, if the height b of the gas ejection port is to be increased, the width a should be reduced from the viewpoint of pressure resistance.

Preferably, a <c, where a is the lateral width of the gas outlet and c is the length of the gas inlet tube. If the heat (heat source) temperature, gas pressure, and gas flow rate are constant and an attempt is made to give the gas as much heat as possible in the preheating region, the length c of the gas in the traveling direction with respect to the heating source is increased. The width a should be reduced accordingly.
Preferably, the lateral width of the gas outlet and / or gas outlet is preferably ½ or less of the diameter of the wafer, and more preferably, the lateral width of the gas outlet and / or gas outlet is the diameter of the wafer. It is preferable that the width is 1/3 or less, and more preferably, the lateral width of the gas outlet and / or the gas outlet is 1/15 or less compared to the diameter of the wafer.

  Preferred embodiments of the present invention will be additionally described.

According to the substrate processing apparatus of the first aspect, a reaction tube having a processing chamber capable of processing a plurality of substrates arranged in a direction perpendicular to the substrate processing surface, and an outer periphery of the reaction tube are enclosed. A gas introducing pipe reaching at least the outside of the heating apparatus is provided on a side surface of the reaction tube in a region where the substrate is processed inside the reaction tube. A substrate processing apparatus in which a gas ejection port for ejecting a gas from the gas introduction pipe into the processing chamber is provided in a slit shape so as to span at least a plurality of substrates in a direction perpendicular to the substrate processing surface. Is provided.
Since the gas introduction tube is provided on the side surface of the reaction tube in the region where the substrate is processed inside the reaction tube, the gas flow supplied from the gas introduction tube into the reaction tube becomes a side flow, and the substrate processing efficiency is increased. Can be improved. In addition, the gas introduction pipe is provided with a gas ejection port for ejecting gas from the gas introduction pipe to the processing chamber in a slit shape so as to span at least a plurality of substrates in a direction perpendicular to the substrate processing surface. Therefore, the amount of gas entering between the substrates can be made uniform, and the uniformity between the substrate surfaces and the in-plane film thickness is improved.

In the first aspect, the gas introduction pipe has a plurality of gas introduction compartments that are partitioned in a direction perpendicular to the processing surface of the substrate, and the gas ejection ports are respectively provided in the gas introduction compartments. It is preferable that it is formed.
When the gas introduction pipe has a plurality of gas introduction compartments that are partitioned in a direction perpendicular to the processing surface of the substrate, and the gas ejection port is formed in each of the gas introduction compartments, the gas is introduced between the substrates. Can be reliably and evenly flown, and a loading effect can be prevented. Further, since unnecessary gas flow into and out of the compartment is suppressed, it is possible to obtain an appropriate gas flow rate for processing. Accordingly, it is possible to improve the film thickness uniformity within and between the surfaces of a large number of substrates formed at one time.

  Preferably, the gas ejection port is formed one by one for each gas introduction section. In this way, by forming one gas injection port for one gas introduction section in the gas introduction pipe, one introduction flow rate can be ejected from one gas injection port. Without lowering the gas flow velocity, the gas having the same amount of heat can reach the center of the substrate.

  Preferably, the gas outlet has an opening area having the same area as a cross-sectional area perpendicular to the substrate processing surface of the gas introduction section. When the gas outlet has an opening area having the same area as the cross-sectional area in the direction perpendicular to the substrate processing surface of the gas introduction section, gas can be supplied more smoothly to the substrate processing surface.

In the first aspect, it is preferable that the gas introduction pipe has at least a distance from the gas jet outlet to a gas inlet pipe upstream end portion larger than a distance between both ends of the gas jet outlet in the substrate circumferential direction. It is good to be formed.
Further, when the gas introduction part of the reaction tube is lengthened to the side in such a configuration, the gas is supplied to the substrate processing surface without reducing the gas flow rate from the upstream tip of the gas introduction pipe to the substrate. be able to.

  In the first aspect, it is preferable that the gas introduction pipe is formed over the entire lateral area located in the substrate processing region. If the gas introduction pipe is formed in the entire side region located in the substrate processing region, the substrate processing region can be covered with the side flow.

In the first aspect, it is preferable that a gas exhaust pipe is further provided on a side surface of the reaction tube in a region where the substrate is processed inside the reaction tube, and the gas exhaust pipe includes the processing chamber. The gas exhaust port for exhausting gas from the gas exhaust pipe to the gas exhaust pipe is preferably provided in a slit shape so as to extend over at least a plurality of substrates in a direction perpendicular to the substrate processing surface.
A gas exhaust pipe is further provided on a side surface of the reaction tube. The gas exhaust pipe has at least a plurality of gas exhaust ports that exhaust gas from the processing chamber to the gas exhaust pipe in a direction perpendicular to the substrate processing surface. If the slits are provided in such a size as to straddle the substrate, not only the introduction of gas but also the exhaust also becomes a side flow, so that the efficiency of substrate processing can be further improved. Further, the amount of gas entering between the substrates can be made uniform, and the uniformity between the substrate surfaces and the in-plane film thickness is further improved.

The gas exhaust pipe has a plurality of gas exhaust compartments partitioned in a direction perpendicular to the processing surface of the substrate, and the gas exhaust port is formed in each of the gas exhaust compartments. Is preferred.
In this way, not only the gas introduction pipe but also the gas exhaust pipe has the gas exhaust section, and the gas exhaust port is formed in each of the gas exhaust sections, the gas is allowed to flow between the substrates reliably and evenly. Can prevent loading effects. Further, since unnecessary gas flow into and out of the compartment is suppressed, it is possible to obtain an appropriate gas flow rate for processing. Accordingly, it is possible to improve the film thickness uniformity within and between the surfaces of a large number of substrates formed at one time.

A processing gas supply unit and a first inert gas supply unit are connected to each upstream side of the gas introduction partition unit, and a position facing each gas introduction partition unit when the substrate is processed in the reaction tube When a substrate is disposed on the substrate, a processing gas is supplied from the processing gas supply unit, and when a substrate is not disposed at a position facing each gas introduction section, an inert gas is supplied from the inert gas supply unit. It is preferable to further include a gas control unit.
Since the gas control section supplies not the processing gas but the inert gas from the gas introduction section at the position where the substrate is not disposed, it is possible to suppress the adhesion and deposition of reaction products in the reaction tube.

In the first aspect, it is preferable that the apparatus further includes a plasma generating device in which an electrode is disposed outside the processing chamber so as to sandwich the gas introduction tube, and the gas is converted into plasma by the gas introduction tube.
An electrode is arranged outside the processing chamber so as to sandwich the gas introduction tube, and further equipped with a plasma generator that converts the gas into plasma with the gas introduction tube, a remote plasma method can be realized, so that the substrate is not damaged at a time. It is possible to improve the film thickness uniformity between the surfaces of a plurality of substrates to be formed.

In the first aspect, it is preferable that a second inert gas supply unit for supplying an inert gas into the reaction tube from above the reaction tube is further provided.
If the second inert gas supply unit that supplies the inert gas into the reaction tube from above the reaction tube is provided, the flow of the processing gas to the upper side of the reaction tube can be prevented.

  Moreover, it is preferable that a third inert gas supply unit for supplying an inert gas into the reaction tube from below the reaction tube is further provided. When the third inert gas supply unit that supplies the inert gas into the reaction tube from the lower side of the reaction tube is provided, it is possible to prevent the processing gas from flowing into the lower side of the reaction tube.

  In the first aspect, it is preferable that a gas blocking part is further provided above the reaction tube. If a gas blocking part is provided above the reaction tube, it is possible to prevent the processing gas from flowing into the reaction tube.

  Preferably, the gas blocking portion further includes a reinforcing member that extends in a direction perpendicular to the processing surface of the substrate and reinforces the wall of the reaction tube. If the gas blocking part is provided with a reinforcing member, the pressure resistance of the reaction tube can be improved.

  Preferably, the gas blocking part constitutes a wall of the reaction tube. If the gas blocking part forms the tube wall of the reaction tube, the configuration can be simplified.

  Further, preferably, the gas blocking part is provided on an inner wall of the reaction tube. If the gas blocking part is provided on the inner wall of the reaction tube, the existing reaction tube can be used effectively.

Preferably, at least upper ends and lower ends of the gas introduction pipe and the gas exhaust pipe have protrusions protruding inward from the inner wall surface of the reaction pipe.
When the upper end of the gas introduction pipe has a protrusion protruding inward from the inner wall surface of the reaction tube, the processing gas supplied from the gas introduction pipe into the reaction tube can be made difficult to flow upward from the top plate of the reaction tube. . In addition, when the lower end of the gas introduction pipe has a protruding portion protruding inward from the inner wall surface of the reaction tube, the processing gas supplied from the gas introduction pipe into the reaction tube may be less likely to flow downward from the bottom plate of the reaction tube. it can. Further, when the upper and lower ends of the gas introduction pipe and the gas exhaust pipe have protrusions protruding inward from the inner wall surface of the reaction tube, a plurality of substrates are formed in a substrate holder arranged in a direction perpendicular to the substrate processing surface. Compared to the case, the structure becomes easier.

  Preferably, the protruding portion is provided with a notch at the same position in the circumferential direction with respect to the processing surface of the substrate. If the protrusions are provided with notches that are the same in the circumferential direction with respect to the processing surface of the substrate, the temperature detector can be accommodated in these notches.

  Preferably, a temperature detector for detecting the temperature in the processing chamber is housed in the notch of the protrusion. Since the temperature detector for detecting the temperature in the processing chamber is housed in the cutout portion of the protruding portion, the reproducibility of the installation position of the temperature detector is good and can be detected stably.

Further, according to the second aspect, the cylindrical reaction tube having a processing chamber capable of processing a plurality of substrates arranged in a direction perpendicular to the substrate processing surface and the outer periphery of the reaction tube are surrounded. A substrate processing apparatus is provided in which a gas introduction pipe and a gas exhaust pipe reaching at least the outside of the heating apparatus are provided on a side surface of the reaction tube.
Since both the reaction tube and the heating device are cylindrical, it is excellent in uniform heating and the substrate processing efficiency can be further improved. In addition, since the gas introduction pipe and the gas exhaust pipe reaching at least the outside of the heating device are provided on the side surface of the reaction tube, the diameter of the reaction tube is reduced, and the gas can easily flow between the substrates. Therefore, it is possible to improve the film thickness uniformity within and between the surfaces of a plurality of substrates formed at one time.

Further, according to the third aspect, the cylindrical reaction tube having a processing chamber capable of processing a plurality of substrates arranged in a direction perpendicular to the substrate processing surface and the outer periphery of the reaction tube are enclosed. A gas introduction pipe that reaches at least the outside of the heating apparatus is provided on a side surface of the reaction tube in a region where the substrate is processed inside the reaction tube. The introduction pipe is formed in a slit-like shape so that a gas ejection port for ejecting gas from the gas introduction pipe to the processing chamber extends over at least a plurality of substrates in a direction perpendicular to the substrate processing surface. Provided is a substrate processing apparatus.
Since the gas introduction tube is provided on the side surface of the reaction tube in the region where the substrate is processed inside the reaction tube, the gas flow supplied from the gas introduction tube into the reaction tube becomes a side flow, and the substrate processing efficiency is increased. Can be improved. In addition, the gas introduction pipe is provided with a gas ejection port for ejecting gas from the gas introduction pipe to the processing chamber in a slit shape so as to span at least a plurality of substrates in a direction perpendicular to the substrate processing surface. Therefore, the amount of gas entering between the substrates can be made uniform, and the uniformity between the substrate surfaces and the in-plane film thickness is improved. In addition, since both the reaction tube and the heating device are cylindrical, it is excellent in uniform heating and the substrate processing efficiency can be further improved.

Further, according to the method for manufacturing a semiconductor device processed using the substrate processing apparatus of the first aspect, the step of carrying the substrate into the reaction tube, and the gas injection while maintaining the gas flow rate in the gas introduction tube. Provided is a method for manufacturing a semiconductor device, which includes a step of processing a substrate by heating the inside of the reaction tube with the heating device while introducing a gas from an outlet between the substrates in the reaction tube, and a step of unloading the substrate from the reaction tube. Is done. According to this, the amount of gas entering between the substrates can be made uniform, the gas concentration and the gas velocity can be sent to each substrate uniformly between the surfaces, between the substrate surfaces, in-plane The film thickness uniformity is improved.

Further, according to the fourth aspect, there is provided a cylindrical reaction container having a processing chamber capable of processing a plurality of substrates arranged in a direction perpendicular to the substrate processing surface, and the inside of the reaction container. A gas introduction pipe and a gas exhaust pipe extending in a direction perpendicular to the side face are provided on a side face of the reaction tube in a region for processing a substrate, and at least the gas introduction pipe is provided with the treatment from the gas introduction pipe. There is provided a reaction vessel in which a gas jet port for jetting gas into a chamber is provided in a slit shape so as to extend over at least a plurality of substrates in a direction perpendicular to the substrate processing surface.
Since the reaction tube is cylindrical, it is excellent in uniform heating and the substrate processing efficiency can be further improved. In addition, since the gas introduction pipe and the gas exhaust pipe are provided on the side surface of the reaction tube, the diameter of the reaction tube is reduced and the gas can easily flow between the substrates. Therefore, it is possible to improve the film thickness uniformity within and between the surfaces of a plurality of substrates formed at one time. In addition, the gas introduction pipe is provided with a gas ejection port for ejecting gas from the gas introduction pipe to the processing chamber in a slit shape so as to span at least a plurality of substrates in a direction perpendicular to the substrate processing surface. Therefore, the amount of gas entering between the substrates can be made uniform, and the uniformity between the substrate surfaces and the in-plane film thickness is improved.

  In the first aspect, it is preferable that the ejection port is formed so that the horizontal width with respect to the substrate processing surface is ½ or less with respect to the diameter of the substrate. With this configuration, the gas ejected from the gas introduction port can pass through the center of the substrate at the same flow rate as that in the gas introduction pipe.

In the first aspect, it is preferable that the ejection port is formed so that the horizontal width with respect to the substrate processing surface is 1/15 or less with respect to the diameter of the substrate. With this configuration, the gas flow can be in one direction, the amount of gas entering between the substrates can be made uniform, and the gas concentration and gas velocity can be made uniform between the surfaces. It can be sent to the substrate, and the uniformity between the substrate surfaces and the in-plane film thickness is improved.
According to the fifth aspect, a step of carrying a plurality of substrates arranged in a direction perpendicular to the substrate processing surface into the processing chamber, and a gas is allowed to flow between the rotating substrates in the processing chamber from the gas introduction pipe. A substrate processing method comprising: a step of processing a substrate by causing a gas to reach a central portion of the substrate processing surface of the substrate while maintaining a gas flow rate in the gas introduction pipe when processing the substrate. . According to this, the amount of gas entering between the substrates can be made uniform, and the gas concentration and the gas velocity can be sent to each substrate uniformly between the surfaces. The film thickness uniformity is improved.

<< Description of Examples to which the Processing Furnace of the Embodiment is Applied >>
FIG. 17 is a schematic configuration diagram of a processing furnace 202 of a substrate processing apparatus according to an example that is preferably used in the embodiment of the present invention. The basic components of the processing furnace are the same as the corresponding components of the processing furnace according to the first embodiment described with reference to FIG. 1, and therefore will not be repeatedly described here. System / gas exhaust system, heater system and control system will be described.

<Gas introduction system>
A processing gas, for example, a film forming gas, is supplied to the upstream side of each of the plurality of gas introduction sections 230a to 230h of the gas introduction pipe 230 via MFCs (mass flow controllers) 241a to 241h as gas flow controllers. Process gas supply units 249a to 249h, and first inert gas supply units 250a to 250h for supplying a first inert gas, for example, N ₂ gas.
Is connected. A gas flow rate control unit 235 is electrically connected to the MFCs 241a to 241h, and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired amount.
When processing the wafer 200 in the reaction tube 203 by the above-described MFCs 241a to 241h, if the wafer 200 is disposed at a position facing the gas introduction compartments 230a to 230h, the processing gas supply units 249a to 249h When the processing gas is supplied and the wafer 200 is not disposed at a position facing the gas introduction compartments 230a to 230h, the inert gas is supplied from the first inert gas supply units 250a to 250h. . The MFCs 241a to 241h constitute the gas control unit described above.

<Gas exhaust system>
A vacuum exhaust device such as a vacuum pump is provided downstream of each of the plurality of gas exhaust compartments 231a to 231h of the gas exhaust pipe 231 via pressure sensors 245a to 245h as pressure detectors and pressure adjusting devices 242a to 242h. 246a to 246h are connected, and are configured to be evacuated so that the pressure in the processing chamber 201 becomes a predetermined pressure (degree of vacuum). A pressure controller 236 is electrically connected to the pressure regulators 242a to 242h and the pressure sensors 245a to 245h, and the pressure controller 236 is based on the pressure detected by the pressure sensors 245a to 245h. ˜242h is configured to control at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure.

<Heater system>
The heat insulator 260 of the heater 206 includes a cylindrical side wall heat insulating material 264 and a circular ceiling heat insulating material 265 that closes the upper portion of the side wall heat insulating material 264.
A heater wire 266 a as the first heating element 266 is provided between the side wall heat insulating material 264 and the reaction tube 203. The heater element wire 266a is formed in a zigzag shape, and is provided in a ring shape along the inner wall of the side wall heat insulating material 264 of each zone divided into zones in the vertical direction, as in the prior art.
The gas inlet tube side wall heater 267a as the second heating element 267 is provided between the gas inlet tube notch 261a and the gas inlet tube 230. The gas inlet tube side wall heating body 267a is provided along the inner wall of the gas inlet tube notch 261a.
The side wall heating body 267a for the gas introduction pipe as the third heating element 268 is provided between the gas exhaust pipe cutout 262a and the gas exhaust pipe 231. The gas exhaust pipe side wall heater 268a is provided along the inner wall of the gas exhaust pipe cutout 262a.
The gas inlet pipe side wall heating body 267a and the gas exhaust pipe side wall heating body 268a are provided so as to be spread over at least the inner wall of the notch portion in the vicinity of the gas inlet pipe 230 or the gas exhaust pipe 231. It is preferably provided not only on one side wall of the gas introduction pipe cutout portion 261a or the gas exhaust pipe cutout portion 262a, but also on both opposing inner side walls, and on the inside of the gas introduction pipe cutout portion 261a or the gas exhaust pipe cutout portion 262a. More preferably, it is also provided on the wall.
Preferably, when the side wall heater 267a for gas introduction pipe and the side wall heater 268a for gas exhaust pipe are provided across each zone of the heater wire 266a, the controllability becomes fine. The power source that supplies power to the gas inlet tube side wall heater 267a and the gas exhaust tube side wall heater 268a is a power source different from the power source that supplies power to the heater wire 266a.

<Control system>
The processing furnace control system includes temperature control and other controls as described below.
"Temperature control"
In the vicinity of the outside of the reaction tube 203, a temperature sensor 263 is installed as a temperature detector. A temperature control unit 238 is electrically connected to the heater 206 and the temperature sensor 263, and the temperature in the processing chamber 201 is adjusted by adjusting the power supply to the heater 206 based on the temperature information detected by the temperature sensor 263. Is controlled at a desired timing so as to have a desired temperature distribution. Note that the temperature sensor 263 may be the temperature sensor 270 described in the third embodiment.
Further, a temperature sensor 269 as a temperature detector is installed in the notch portion 261a for the gas introduction pipe (see FIGS. 2 and 6). A temperature control unit 238 is electrically connected to the side wall heating body 267a for the gas introduction pipe and the temperature sensor, and adjusts the state of energization to the side wall heating body 267a for the gas introduction pipe based on the temperature information detected by the temperature sensor. Thus, the temperature in the gas introduction pipe 230 is controlled at a desired timing so as to become a desired temperature.
Furthermore, a temperature sensor 270 as a temperature detector is installed in the gas exhaust pipe notch 262a (see FIGS. 2 and 6). A temperature control unit 238 is electrically connected to the gas exhaust pipe side wall heater 268a and the temperature sensor, and adjusts the degree of energization to the gas exhaust pipe side wall heater 268a based on the temperature information detected by the temperature sensor. Thus, the temperature in the gas exhaust pipe 231 is controlled at a desired timing so as to become a desired temperature.
The temperature control unit 238 is configured to control the above-described heater element wire 266a, the gas inlet pipe side wall heater 267a, and the gas exhaust pipe side wall heater 268a by different systems.
A drive control unit 237 is electrically connected to the rotation mechanism 254 and the boat elevator, and is configured to control at a desired timing so as to perform a desired operation.

<Other controls>
The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus. ing. These gas flow rate control unit 235, pressure control unit 236, drive control unit 237, temperature control unit 238, and main control unit 239 are configured as a controller 240.
The processing furnace 202 according to the embodiment is configured as described above.
<Example of processing conditions>
As an example, the processing conditions for processing a wafer in the processing furnace of the embodiment include, for example, in the formation of a Si ₃ N ₄ film, a processing pressure of 30 Pa and a gas species of dichlorosilane gas (SiH ₂ Cl ₂ ), ammonia gas (NH ₃ ), and the gas supply flow rate of each compartment is SiH ₂ Cl ₂ 0
. Examples are 1 sccm and NH ₃ 0.5 sccm.
Further, a processing temperature of 760 ° C. in the reaction tube 203 heated by the heater wire 266a, a temperature of 300 ° C. in the gas introduction tube 230 heated by the gas inlet tube side wall heating body 267a, and a gas exhaust side wall heater 268a. The temperature of the gas exhaust pipe 231 heated by the above is exemplified by 300 ° C.
The wafer is processed by keeping each processing condition constant at a certain value within each range.

200 wafer (substrate)
210 Processing chamber 203 Reaction tube 206 Heater (heating device)
230 Gas introduction pipe 231 Gas exhaust pipes 230a to 230h Partition parts 249a to 249h Process gas supply parts 250a to 250h First inert gas supply part 235 Gas flow rate control part (gas control part)

Claims (2)

Carrying a plurality of substrates arranged in a direction perpendicular to the substrate processing surface into a processing chamber provided inside a reaction tube provided so as to surround the outer periphery by a heating device;
A gas is introduced into a gas introduction pipe provided so as to reach at least the outside of the heating device at a side surface of the reaction tube in a region where the substrate is processed in the reaction tube, A step of jetting the gas into the processing chamber from a gas jet port provided in a slit shape in a size that spans at least a plurality of the substrates in the vertical direction, and processing the substrate;
In the gas introduction pipe, there are provided a plurality of gas introduction compartments that are partitioned in a direction perpendicular to the substrate processing surface, and the gas outlet is formed in each of the plurality of gas introduction compartments,
In the step of processing the substrate,
In the gas introduction compartment where the substrate is disposed at an opposing position among the plurality of gas introduction compartments, a processing gas is supplied to the processing chamber from the gas outlet of the gas introduction compartment. And
Among the plurality of gas introduction compartments, in the gas introduction compartment where the substrate is not disposed at an opposing position, an inert gas is supplied from the gas outlet of the gas introduction compartment to the processing chamber. A method for manufacturing a semiconductor device to be supplied . A reaction tube having therein a processing chamber capable of processing a plurality of substrates arranged in a direction perpendicular to the substrate processing surface;
A heating device provided so as to surround the outer periphery of the reaction tube,
A gas introduction tube reaching at least the outside of the heating device is provided on the side surface of the reaction tube in the region where the substrate is processed inside the reaction tube,
The gas introduction pipe is formed in each of the plurality of gas introduction compartments divided in a direction perpendicular to the processing surface of the substrate and in each of the gas introduction compartments, and at least a plurality of gas introduction pipes in the direction perpendicular to the substrate processing surface. A gas spout that is provided in a slit shape in such a size as to straddle a single substrate and ejects the gas into the processing chamber,
The gas outlet is formed in each of the gas introduction sections,
A processing gas supply unit and an inert gas supply unit are connected to each upstream side of the gas introduction section,
In the gas introduction compartment where the substrate is disposed at an opposing position among the plurality of gas introduction compartments, a processing gas is supplied to the processing chamber from the gas outlet of the gas introduction compartment. And in the gas introduction section where the substrate is not disposed at the opposing position among the plurality of gas introduction sections, the gas injection port of the gas introduction section is inactive to the processing chamber. A substrate processing apparatus further comprising a gas control unit for supplying a gas.