KR20000045288A - Method for forming contact metal film of semiconductor device - Google Patents

Method for forming contact metal film of semiconductor device Download PDF

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Publication number
KR20000045288A
KR20000045288A KR1019980061846A KR19980061846A KR20000045288A KR 20000045288 A KR20000045288 A KR 20000045288A KR 1019980061846 A KR1019980061846 A KR 1019980061846A KR 19980061846 A KR19980061846 A KR 19980061846A KR 20000045288 A KR20000045288 A KR 20000045288A
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South Korea
Prior art keywords
metal film
contact hole
contact
contact metal
gas
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KR1019980061846A
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Korean (ko)
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KR100293827B1 (en
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김종석
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김영환
현대전자산업 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation

Abstract

PURPOSE: A method for forming a contact metal film of a semiconductor device is provided to reduce the working time of a polishing process by uniformly depositing the contact metal film. CONSTITUTION: An insulation layer(3) including a contact hole(H) is formed on an upper portion of a conductive layer(1). Gas including atoms forming a contact metal film(7) are exposed to the upper portion of the insulation layer(3) and an inner wall of the contact hole(H). Then, a plasma process is carried out to return the atoms forming the contact metal film(7), so that the atoms are deposited to the upper portion of the insulation layer(3) and an inner wall of the contact hole(H). The gas exposing process and the plasma process are performed at least one time.

Description

반도체 소자의 접촉 금속막 형성방법Method for forming contact metal film of semiconductor device

본 발명은 반도체 소자의 제조방법에 관한 것으로, 보다 구체적으로는, 콘택홀 내벽에서 절연막과 콘택 플러그간을 접착시키는 접촉 금속막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method of forming a contact metal film in which an insulating film and a contact plug are adhered on an inner wall of a contact hole.

일반적으로, 반도체 소자가 고집적화되어 감에 따라 알루미늄 금속 배선막으로는 미세한 콘택홀을 매립하기 어렵다. 이에따라, 콘택홀내에 공간 매립 특성이 용이한 텅스텐 금속막을 충진시키어 플러그를 형성하고, 플러그와 콘택되도록 금속막을 배치시키는 기술이 제안되었다.In general, as semiconductor devices become highly integrated, it is difficult to fill minute contact holes with an aluminum metal wiring film. Accordingly, a technique has been proposed in which a tungsten metal film is easily filled in a contact hole to form a plug, and a metal film is disposed to contact the plug.

이때, 콘택 플러그와 절연막 사이에 접촉 특성이 우수하지 않아, 콘택홀 내벽에 접착제로서 티타늄막 또는 탄탈륨막을 피복한다음, 콘택홀내에 텅스텐 물질을 충진시킨다.At this time, the contact property between the contact plug and the insulating film is not excellent, and the inner wall of the contact hole is coated with a titanium film or tantalum film as an adhesive, and then tungsten material is filled in the contact hole.

이러한 접촉 금속막은 RF 스퍼터링 방식, 스퍼터링 콜리메이티드(sputtering collimated) 증착 방식, IMP(ionized metal plasma) 방식등으로 형성된다. 이때, 접촉 금속막은 콘택홀 저면에 존재하는 불순물을 효과적으로 제거하기 위하여, 접촉 금속막을 두껍게 형성되도록 한다.The contact metal film is formed by an RF sputtering method, a sputtering collimated deposition method, an ionized metal plasma (IMP) method, or the like. In this case, the contact metal film is formed to have a thick contact metal film in order to effectively remove impurities present in the bottom of the contact hole.

그러나, 상술한 바와 같이, 콘택홀 저면의 접촉 금속막을 두껍게 형성하면, 콘택홀 저면의 불순물은 용이하게 차단할 수 있으나, 접촉 금속막의 두께가 두꺼워짐에 따라, 콘택홀의 입구부에서 오버행(overhang)이 발생되어, 네가티브 슬로프(negative slope)를 이룬다.However, as described above, when the contact metal film on the bottom of the contact hole is thick, impurities on the bottom of the contact hole can be easily blocked, but as the thickness of the contact metal film becomes thick, an overhang is formed at the inlet of the contact hole. Generated, forming a negative slope.

이로 인하여 후속으로 진행되는 플러그 형성 공정시, 금속막을 매립하는데 어려움이 있다.As a result, in the subsequent plug formation process, there is a difficulty in embedding the metal film.

또한, 접촉 금속막의 두께가 증가됨에 따라, 텅스텐 금속막을 증착하고, 콘택홀 측벽 절연막이 노출되도록 연마하는 공정시 제거 비율이 증가되어, 생산성을 저하시키는 문제점이 발생되었다.In addition, as the thickness of the contact metal film is increased, a removal rate is increased during the process of depositing a tungsten metal film and polishing the contact hole sidewall insulating film to be exposed, thereby causing a problem of lowering productivity.

이러한 문제점을 해결코자 종래의 다른 방법은 반응 기체와 환원 기체를 동시에 주입하여, 가스상 반응(gas phase reaction)으로 접촉 금속막을 형성하는 방법이 제안되었다. 그러나, 상기 방법은 접촉 금속막의 증착시 증착 균일도가 확보되기 어렵고, 500℃ 이상에서 불순물을 제거하여 주는 공정이 요구되어, 알루미늄 금속을 배선으로 사용하기 형성하기 어렵다는 문제점이 있다.In order to solve this problem, another conventional method has been proposed in which a reaction metal and a reducing gas are simultaneously injected to form a contact metal film by a gas phase reaction. However, the above method has a problem that it is difficult to ensure the uniformity of deposition during deposition of the contact metal film, and a process for removing impurities at 500 ° C. or more is difficult to form aluminum metal as a wiring.

따라서, 본 발명은 콘택홀 내벽에 피복되는 접촉 금속막의 증착 균일도를 향상시킬 수 있는 반도체 소자의 접촉 금속막 형성방법을 제공하는 것을 목적으로 한다.Accordingly, an object of the present invention is to provide a method for forming a contact metal film of a semiconductor device capable of improving the deposition uniformity of a contact metal film coated on an inner wall of a contact hole.

도 1 내지 도 4는 본 발명에 따른 접촉 금속막 형성방법을 설명하기 위한 단면도.1 to 4 are cross-sectional views illustrating a method of forming a contact metal film according to the present invention.

(도면의 주요 부분에 대한 부호의 설명)(Explanation of symbols for the main parts of the drawing)

1 - 전도체 2 - 난반사 방지막1-Conductor 2-Anti-reflective coating

3 - 절연막 4 - 흡착물3-insulating film 4-adsorbate

6 - 휘발되는 가스 성분 7 - 접촉 금속막6-gas component volatilized 7-contact metal film

상기한 본 발명의 목적을 달성하기 위하여, 본 발명의 일 실시예에 따르면, 본 발명은 전도층 상부에 콘택홀을 포함하는 절연층을 형성하는 단계와, 상기 절연층 상부 및 콘택홀 내벽에 접촉 금속막을 구성하는 원자를 포함하는 가스를 익스포즈시켜서, 상기 가스 성분들을 절연층 상부 및 콘택홀 내벽에 흡착시키는 단계와, 상기 접촉 금속막을 구성하는 원자만을 환원시키도록 플라즈마 처리하여, 상기 절연층 상부 및 콘택홀 내벽에 접촉 금속막을 구성하는 원자들을 증착하는 단계, 및 상기 접촉 금속막을 구성하는 원자를 포함하는 가스를 익스포즈시키는 단계와, 상기 플라즈마 처리하는 단계를 적어도 한 번 이상 반복 수행하여 접촉 금속막을 형성하는 단계를 포함한다.In order to achieve the above object of the present invention, according to an embodiment of the present invention, the present invention comprises the steps of forming an insulating layer including a contact hole on top of the conductive layer, the upper contact with the insulating layer and the inner wall of the contact hole Exposing a gas containing atoms constituting a metal film, adsorbing the gas components to an upper portion of the insulating layer and an inner wall of the contact hole, and performing a plasma treatment to reduce only the atoms constituting the contact metal film, the upper portion of the insulating layer And depositing atoms constituting the contact metal film on the inner wall of the contact hole, exposing a gas containing the atoms constituting the contact metal film, and repeating the plasma treatment at least one or more times. Forming a film.

여기서, 상기 접촉 금속막을 구성하는 원자를 포함하는 가스는 TiCl4가스, 또는 TaCl5가스이다.Here, the gas containing the atoms constituting the contact metal film is TiCl 4 gas or TaCl 5 gas.

또한, 상기 플라즈마 처리시 이용되는 플라즈마는 수소 플라즈마이고, 상기 익스포즈시 챔버내 압력은 0.1 내지 100 torr 정도이며, 상기 익스포즈시 절연막 및 콘택홀 내벽에 흡착되는 흡착물의 두께는 10 내지 30Å 정도이다.In addition, the plasma used in the plasma treatment is hydrogen plasma, the pressure in the chamber during the exposure is about 0.1 to 100 torr, the thickness of the adsorbate adsorbed on the inner wall of the insulating film and the contact hole during the exposure is about 10 to 30 kPa .

또한, 상기 콘택홀을 형성하는 단계와 가스를 익스포즈시키는 단계 사이에, 콘택홀 기저부에 발생되는 불순물을 제거하기 위한 RF 에칭 공정을 추가로 실시하는 것을 특징으로 한다.In addition, between the forming of the contact hole and the step of exposing the gas, an RF etching process for removing impurities generated in the bottom of the contact hole is further performed.

본 발명에 의하면, 콘택홀 내벽 및 상면에 접촉 금속막을 구성하는 원자를 주성분으로 하는 가스를 익스포즈시킨다음, 환원력이 강한 플라즈마로 처리함으로써, 접촉 금속막을 구성하는 원자들만이 콘택홀 내벽 및 상면에 고르게 흡착된다. 이러한 공정을 여러번 반복 실시하여, 고른 두께를 지닌 접촉 금속막을 형성한다.According to the present invention, a gas mainly containing atoms constituting the contact metal film on the inner wall and the upper surface of the contact hole is exposed, and then treated with plasma having a strong reducing power, so that only atoms forming the contact metal film are formed on the inner wall and the upper surface of the contact hole. Adsorbed evenly. This process is repeated several times to form a contact metal film having an even thickness.

이에따라, 플러그 금속막을 매립하기가 용이해지며, 매립후 연마 공정이 진행되는 시간이 짧아져서 생산성이 증대된다.Accordingly, the plug metal film is easily embedded, and the time required for the polishing process after embedding is shortened to increase productivity.

(실시예)(Example)

이하 첨부한 도면에 의거하여 본 발명의 바람직한 실시예를 자세히 설명하도록 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

첨부한 도면 도 1 내지 도 4는 본 발명에 따른 접촉 금속막 형성방법을 설명하기 위한 단면도이다.1 to 4 are cross-sectional views illustrating a method of forming a contact metal film according to the present invention.

먼저, 도 1에 도시된 바와 같이, 전도층(1) 상부에 난반사 방지막(2)을 증착한다음, 난반사 방지막(2) 상부에 층간 절연막(3)을 형성한다. 이어서, 난반사 방지막(2)의 소정 부분이 오픈되도록 층간 절연막(3)을 식각하여, 콘택홀(H)을 형성한다.First, as shown in FIG. 1, an antireflection film 2 is deposited on the conductive layer 1, and then an interlayer insulating film 3 is formed on the antireflection film 2. Subsequently, the interlayer insulating film 3 is etched so that a predetermined portion of the diffuse reflection prevention film 2 is opened to form a contact hole H.

다음으로, 도 2에 도시된 바와 같이, 접촉 금속막을 구성하는 원자를 주성분으로 하는 가스 예를들어, TiCl4, TaCl5가스를 익스포즈(expose)시켜서, 상기 가스 성분(4)들 예를들어 Ti, Cl(또는 Ta, Cl)이 콘택홀(H) 측벽 및 절연막 상부에 흡착되도록 한다. 이때, 익스포즈시 챔버내 압력은 0.1 내지 100 torr 정도가 되고, 익스포즈시 절연막 및 콘택홀 내벽에 흡착되는 흡착물(Ti, Cl 또는 Ta, Cl)의 두께는 10 내지 30Å 정도가 됨이 바람직하다. 이때, 접촉 금속막을 구성하는 원자를 주성분으로 하는 가스를 익스포즈시키기 전에, 프리클리닝 공정인 RF 에칭 공정을 추가로 실시하여, 콘택홀(H) 기저부에 발생되는 불순물을 제거하여 줄 수 있다.Next, as shown in FIG. 2, a gas mainly composed of atoms constituting the contact metal film, for example, TiCl 4 and TaCl 5 gas is exposed to expose the gas components 4, for example. Ti, Cl (or Ta, Cl) is adsorbed on the contact hole (H) sidewall and the insulating film. At this time, the pressure in the chamber during exposure is about 0.1 to 100 torr, the thickness of the adsorbate (Ti, Cl or Ta, Cl) adsorbed on the inner wall of the insulating film and the contact hole during exposure is preferably about 10 to 30 kPa. Do. At this time, before exposing the gas containing the atoms constituting the contact metal film as a main component, an RF etching process, which is a precleaning process, may be further performed to remove impurities generated at the bottom of the contact hole H.

그리고나서, 도 3에 도시된 것과 같이, 환원력이 매우 강한 가스 플라즈마, 예를 들어, 수소 가스 플라즈마를 쪼여준다. 그러면, 수소와, 흡착된 물질 중 Cl(6)이 반응하여 HCl이 형성되어 공기중으로 휘발되고, 콘택홀 내벽 및 상면에는 Ti 또는 Ta 원자들이 고르게 남아있게 된다. 이때, 상기 수소 플라즈마 처리 공정에 의하여 콘택홀 저면의 불순물이 용이하게 제거되어, 별도로 콘택홀 저면에 접촉 금속막의 두께를 두껍게 형성할 필요가 없게 된다.Then, as shown in FIG. 3, a gas plasma having a very strong reducing power, for example, a hydrogen gas plasma, is split. Then, hydrogen and Cl (6) in the adsorbed material react to form HCl to volatilize into the air, and Ti or Ta atoms remain evenly on the inner wall and the upper surface of the contact hole. At this time, impurities in the bottom of the contact hole are easily removed by the hydrogen plasma treatment process, and there is no need to form a thick contact metal film on the bottom of the contact hole.

그후, 상기와 같은 환원 반응을 여러번 예를들어 3번 정도 반복 실시하여, 도 4와 같이 고른 두께를 갖는 접촉 금속막(7)이 형성된다.Thereafter, the above reduction reaction is repeated three times, for example, about three times to form a contact metal film 7 having an even thickness as shown in FIG.

그리고나서, 도면에서는 도시되어 있지 않지만, 접촉 금속막(7) 상부에 티타늄 질화막을 증착하고, 콘택홀내에 텅스텐 물질을 매립시키어, 텅스텐 플러그를 형성한다.Then, although not shown in the figure, a titanium nitride film is deposited on the contact metal film 7 and a tungsten material is embedded in the contact hole to form a tungsten plug.

이상에서 자세히 설명된 바와 같이, 본 발명에 의하면, 콘택홀 내벽 및 상면에 접촉 금속막을 구성하는 원자를 주성분으로 하는 가스를 익스포즈시킨다음, 환원력이 강한 플라즈마로 처리함으로써, 접촉 금속막을 구성하는 원자들만이 콘택홀 내벽 및 상면에 고르게 흡착된다. 이러한 공정을 여러번 반복 실시하여, 고른 두께를 지닌 접촉 금속막을 형성한다.As described in detail above, according to the present invention, an atom constituting the contact metal film by exposing a gas mainly composed of atoms constituting the contact metal film on the inner wall and the upper surface of the contact hole, and then treating the plasma with a strong reducing force. Only are evenly adsorbed on the inner wall and the upper surface of the contact hole. This process is repeated several times to form a contact metal film having an even thickness.

이에따라, 플러그 금속막을 매립하기가 용이해지며, 매립후 연마 공정이 진행되는 시간이 짧아져서 생산성이 증대된다.Accordingly, the plug metal film is easily embedded, and the time required for the polishing process after embedding is shortened to increase productivity.

또한, 상기 플라즈마 공정으로 콘택홀 저면의 불순물들이 용이하게 제거되어, 콘택홀 저면에서는 접촉 금속막을 두껍게 형성할 필요가 없다.In addition, impurities in the bottom of the contact hole are easily removed by the plasma process, so that the contact metal film does not need to be thickly formed on the bottom of the contact hole.

기타, 본 발명은 그 요지를 일탈하지 않는 범위에서 다양하게 변경하여 실시할 수 있다.In addition, this invention can be implemented in various changes within the range which does not deviate from the summary.

Claims (6)

전도층 상부에 콘택홀을 포함하는 절연층을 형성하는 단계;Forming an insulating layer including a contact hole on the conductive layer; 상기 절연층 상부 및 콘택홀 내벽에 접촉 금속막을 구성하는 원자를 포함하는 가스를 익스포즈시켜서, 상기 가스 성분들을 절연층 상부 및 콘택홀 내벽에 흡착시키는 단계;Exposing a gas containing atoms constituting a contact metal film on the insulating layer and on the inner wall of the contact hole, and adsorbing the gas components on the insulating layer and on the inner wall of the contact hole; 상기 접촉 금속막을 구성하는 원자만을 환원시키도록 플라즈마 처리하여, 상기 절연층 상부 및 콘택홀 내벽에 접촉 금속막을 구성하는 원자들을 증착하는 단계; 및Performing plasma treatment to reduce only atoms constituting the contact metal film, thereby depositing atoms constituting the contact metal film on the insulating layer and on the inner wall of the contact hole; And 상기 접촉 금속막을 구성하는 원자를 포함하는 가스를 익스포즈시키는 단계와, 상기 플라즈마 처리하는 단계를 적어도 한 번 이상 반복 수행하는 것을 특징으로 하는 반도체 소자의 접촉 금속막 형성방법.Exposing a gas containing atoms constituting the contact metal film and repeating the plasma treatment at least one or more times. 제 1 항에 있어서, 상기 접촉 금속막을 구성하는 원자를 포함하는 가스는 TiCl4가스, 또는 TaCl5가스인 것을 특징으로 하는 반도체 소자의 접촉 금속막 형성방법.The method of forming a contact metal film of a semiconductor device according to claim 1, wherein the gas containing atoms constituting the contact metal film is TiCl 4 gas or TaCl 5 gas. 제 1 항 또는 제 2 항에 있어서, 상기 플라즈마 처리시 이용되는 플라즈마는 수소 플라즈마인 것을 특징으로 하는 반도체 소자의 접촉 금속막 형성방법.The method of forming a contact metal film of a semiconductor device according to claim 1 or 2, wherein the plasma used in the plasma treatment is hydrogen plasma. 제 1 항에 있어서, 상기 익스포즈시 챔버내 압력은 0.1 내지 100 torr 정도가 되는 것을 특징으로 하는 반도체 소자의 접촉 금속막 형성방법.The method of claim 1, wherein the pressure in the chamber during exposure is about 0.1 to about 100 torr. 제 1 항 또는 제 4 항에 있어서, 상기 익스포즈시 절연막 및 콘택홀 내벽에 흡착되는 흡착물의 두께는 10 내지 30Å 정도인 것을 특징으로 하는 반도체 소자의 접촉 금속막 형성방법.The method of claim 1 or 4, wherein the thickness of the adsorbate adsorbed on the inner wall of the insulating film and the contact hole during the exposure is about 10 to 30 kPa. 제 1 항에 있어서, 상기 콘택홀을 형성하는 단계와 가스를 익스포즈시키는 단계 사이에, 콘택홀 기저부에 발생되는 불순물을 제거하기 위한 RF 에칭 공정을 추가로 실시하는 것을 특징으로 하는 반도체 소자의 접촉 금속막 형성방법.The semiconductor device as claimed in claim 1, further comprising performing an RF etching process for removing impurities generated at the bottom of the contact hole between the forming of the contact hole and exposing the gas. Metal film formation method.
KR1019980061846A 1998-12-30 1998-12-30 Method for forming contact metal film of semiconductor device KR100293827B1 (en)

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Publication number Priority date Publication date Assignee Title
KR100414870B1 (en) * 2001-06-30 2004-01-13 주식회사 하이닉스반도체 Method for fabricating capacitor using atomic layer deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100414870B1 (en) * 2001-06-30 2004-01-13 주식회사 하이닉스반도체 Method for fabricating capacitor using atomic layer deposition

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