KR20000032666A - Photoresist mask and method for patterning substrate of liquid crystal display using photoresist mask - Google Patents
Photoresist mask and method for patterning substrate of liquid crystal display using photoresist mask Download PDFInfo
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- KR20000032666A KR20000032666A KR1019980049209A KR19980049209A KR20000032666A KR 20000032666 A KR20000032666 A KR 20000032666A KR 1019980049209 A KR1019980049209 A KR 1019980049209A KR 19980049209 A KR19980049209 A KR 19980049209A KR 20000032666 A KR20000032666 A KR 20000032666A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
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- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
본 발명은 노광마스크를 이용하여 액정표시장치 등의 기판의 패턴 및 소자를 구성하는데 있어서, 노광마스크를 개량하여 작업공정을 개선하고, 그에 따라 패턴 및 소자의 제조수율을 향상하는 것에 관한 것이다.The present invention relates to improving the work process by improving the exposure mask in forming a pattern and an element of a substrate such as a liquid crystal display device using an exposure mask, thereby improving the production yield of the pattern and the element.
일반적으로 액정표시장치는 도 1 및 도 2(도 1의 a-b선을 따라 절단하여 나타내는 단면도)에 나타내는 바와 같이 게이트버스라인(60)이 수평방향으로 형성되고, 데이터버스라인(70)이 상기 게이트버스라인과 교차하도록 수직방향으로 형성된다.In general, as shown in FIGS. 1 and 2 (cross-sectional view taken along line ab of FIG. 1), a liquid crystal display device has a gate bus line 60 formed in a horizontal direction, and a data bus line 70 is formed on the gate. It is formed vertically to intersect with the busline.
상기 게이트버스라인(60) 및 데이터버스라인(70)의 교차부에는 소스전극(70a), 드레인전극(70b), 게이트전극(60a), 반도체층(80) 등으로 구성되는 TFT가 형성되고, 드레인전극(70b)에는 화소전극(40)이 접촉되도록 형성된다.TFTs formed of a source electrode 70a, a drain electrode 70b, a gate electrode 60a, a semiconductor layer 80, and the like are formed at an intersection of the gate bus line 60 and the data bus line 70. The pixel electrode 40 is in contact with the drain electrode 70b.
상기 구성 요소들은 투명기판(10) 위에 적층되는 구조 즉, 게이트버스라인에서 분기하는 게이트전극(60a) 위에 SiNx,SiOx 등의 무기막으로 된 게이트절연막(50)이 형성되고, 상기 게이트전극부의 게이트절연막 위에 섬모양의 a-Si 반도체층(80a)과 상기 a-Si 반도체층의 표면위에 양쪽으로 분리되도록 n+형 a-Si 반도체층(80b,80b)이 형성되어 반도체층(80)을 구성한다.The components are stacked on the transparent substrate 10, that is, a gate insulating film 50 made of an inorganic film such as SiNx, SiOx is formed on the gate electrode 60a branching from the gate bus line, the gate of the gate electrode portion A semiconductor layer 80 is formed by forming an island-like a-Si semiconductor layer 80a and an n + type a-Si semiconductor layer 80b and 80b so as to be separated on both surfaces of the a-Si semiconductor layer. do.
양쪽으로 분리된 n+형 a-Si 반도체층(80b,80b)에는 각각 소스전극(70a) 및 드레인전극(70b)이 접촉되고, 그 위에 기판 전면을 덮도록 보호막(55)이 이 덮이고 그 보호막(55) 위에 화소전극(40)이 콘택홀을 통하여 드레인전극(70b)과 접촉되도록 형성된다.The source electrode 70a and the drain electrode 70b are in contact with the n + type a-Si semiconductor layers 80b and 80b separated on both sides, and a protective film 55 is covered to cover the entire surface of the substrate thereon. The pixel electrode 40 is formed on the 55 to contact the drain electrode 70b through the contact hole.
상기와 같이 구성되는 게이트버스라인 및 데이터버스라인의 패턴 및 TFT 스위칭소자는 노광마스크를 이용한 수회의 포토공정에 의하여 구성된다.The pattern of the gate bus line and the data bus line and the TFT switching element constituted as described above are constituted by several photo processes using an exposure mask.
종래의 포토공정은 하나의 예로 도 3a와 같이 투명기판(10) 위에 패턴을 형성하고자하는 금속막(90)이 형성되고, 금속막 위에는 한 예로 포지형의 포토레지스트막(100)이 형성되어 있는 기판에 광 투과부(88a)와 광 차단부(88b)만으로 구성되어 있는 노광마스크(88)를 위치 맞춤한다.In the conventional photo process, as an example, as illustrated in FIG. 3A, a metal film 90 to form a pattern is formed on the transparent substrate 10, and a positive photoresist film 100 is formed on the metal film as an example. The exposure mask 88 composed of only the light transmitting portion 88a and the light blocking portion 88b is positioned on the substrate.
이어서, 상기 노광마스크(88)가 위치 맞춤된 기판 위에 UV광 등을 조사하면 광 투과부(88a)를 통과한 UV광이 포지형의 포토레지스트(100)와 반응하여 포토레지스트(100)가 현상되고, 그 포토레지스트의 노광 현상에 의하여 도 3b와 같이 소정의 포토레지스트 패턴(100a)이 형성된다.Subsequently, when UV light is irradiated onto the substrate on which the exposure mask 88 is positioned, the UV light passing through the light transmitting part 88a reacts with the positive photoresist 100 to develop the photoresist 100. By the exposure development of the photoresist, a predetermined photoresist pattern 100a is formed as shown in Fig. 3B.
상기 포토레지스트(100)가 소정의 패턴으로 형성되면 그 포토레지스트의 패턴을 소정의 온도로 경화한 후, 상기 포토레지스트(100a)의 패턴을 따라 하층의 금속막(90)을 웨트(wet)에칭이나 드라이(dry)에칭 방법으로 식각하고, 금속막 위에 남아있는 포토레지스트 패턴막(100a)을 제거하여 도 3c와 같은 금속패턴막(90a)을 형성한다.When the photoresist 100 is formed in a predetermined pattern, the pattern of the photoresist is cured at a predetermined temperature, and the wet metal etching of the lower metal layer 90 is wet-etched along the pattern of the photoresist 100a. Or by a dry etching method, the photoresist pattern film 100a remaining on the metal film is removed to form the metal pattern film 90a as shown in FIG. 3C.
종래 포토공정의 다른 예로서 도 4a와 같이 투명기판(10) 위에 패턴을 형성하고자하는 금속막(90),(91)이 형성되고, 금속막 위에는 포지형의 포토레지스트막(100)이 형성되어 있는 기판에 광 투과부(88a)와 광 차단부(88b)만으로 구성되어 있는 노광마스크(88)를 위치 맞춤한다.As another example of the conventional photo process, as shown in FIG. 4A, the metal films 90 and 91 to form a pattern are formed on the transparent substrate 10, and a positive photoresist film 100 is formed on the metal film. The exposure mask 88 which consists only of the light transmission part 88a and the light shielding part 88b is aligned to the board | substrate which exists.
이어서, 노광마스크(88)가 위치 맞춤된 기판 위에 UV광 등을 조사하면 광 투과부(88a)를 통과한 UV광이 포지형의 포토레지스트(100)와 반응하여 포토레지스트(100)가 현상되고, 그 포토레지스트의 노광 현상에 의하여 도 4b와 같이 소정의 포토레지스트 패턴(100a)이 형성된다.Subsequently, when UV light or the like is irradiated onto the substrate on which the exposure mask 88 is positioned, UV light passing through the light transmitting part 88a reacts with the positive photoresist 100 to develop the photoresist 100. By the exposure development of the photoresist, a predetermined photoresist pattern 100a is formed as shown in FIG. 4B.
상기 포토레지스트 패턴(100a)을 소정의 온도로 경화하고, 그 패턴막을 마스크로하여 하층의 금속막(90),(91)을 동시에 웨트(wet)에칭이나 드라이(dry)에칭 방법으로 식각하고, 그 금속막 위에 남아있는 포토레지스트 패턴(100a)을 제거하여 도 4c와 같은 금속패턴막(90a)(91a)을 형성한다.The photoresist pattern 100a is cured to a predetermined temperature, and the metal layers 90 and 91 of the lower layer are simultaneously etched by wet or dry etching using the pattern film as a mask. The photoresist pattern 100a remaining on the metal film is removed to form metal pattern films 90a and 91a as shown in FIG. 4C.
상기 도 3a∼도 3c, 도 4a∼도 4c와 같은 과정을 거치는 포토공정을 수회에 걸쳐 실시하므로써, 상기 액정표시장치의 게이트버스라인 및 데이터버스라인의 패턴과 TFT스위칭소자 등을 적층 구조로 형성할 수 있다.By performing the photo process through the process as shown in Figs. 3A to 3C and Figs. 4A to 4C several times, the pattern of the gate bus line and the data bus line and the TFT switching element of the liquid crystal display are formed in a stacked structure. can do.
그런데, 상기 종래의 포토공정에 의하여 구성되는 기판의 패턴은 노광마스크 (88)가 광을 완전히 통과 시키는 투과부와 광을 완전히 차단시키는 차단부만으로 되어 있으므로 도 3c와 같이 금속패턴막(90a)은 대략 직사각형의 모양으로 패턴이 형성된다. 따라서 , 상기 금속패턴막(90a) 위에 다른 막을 도포할 경우에는 그 막이 화살표방향을 타고넘는 스텝커버리지(step coverage) 특성이 열악해지는 문제점이 있다.By the way, since the pattern of the board | substrate comprised by the said conventional photo process consists only of the permeation | transmission part through which the exposure mask 88 passes light completely, and the blocking part which completely blocks light, as shown in FIG. 3C, the metal pattern film 90a is substantially The pattern is formed in the shape of a rectangle. Therefore, when another film is coated on the metal pattern film 90a, there is a problem in that the step coverage characteristic of the film over the direction of the arrow becomes poor.
또, 적층된 2개의 층을 동시에 패터닝할 때는 도 4c와 같이 금속패턴막(90a),(90b)을 동일한 모양으로 밖에 형성할 수 없고, 금속막패턴(90a)(90b)을 각각 다른 모양으로 형성하고자 할 경우에는 2번의 패턴공정을 거쳐야하는 문제점이 있다.When the two stacked layers are simultaneously patterned, only the metal pattern films 90a and 90b can be formed in the same shape as in FIG. 4C, and the metal film patterns 90a and 90b are formed in different shapes. If it is to be formed, there is a problem to go through two pattern processes.
본 발명은 상기와 같은 문제점을 해결하기 위하여 노광마스크의 구조를 광을 완전히 차단하는 부분과, 광을 일부 흡수하는 부분, 광을 완전히 통과시키는 부분으로 구성한다.In order to solve the problems described above, the present invention includes a structure of the exposure mask that completely blocks light, a portion that partially absorbs light, and a portion that completely passes light.
즉, 노광마스크는 투명기판 위에 Cr산화계열막, ITO막을 소정의 패턴으로 형성하여 구성하고, 상기 Cr산화계열막이 광을 완전히 차단하는 부분, 상기 ITO막이 광을 일부흡수하는 부분, Cr산화계열막과 ITO막이 형성되어있지 않은 투명기판 부분은 광을 완전히 통과시키는 부분이 되도록 한다.That is, the exposure mask is formed by forming a Cr oxide based film and an ITO film on a transparent substrate in a predetermined pattern, a portion where the Cr oxide based film completely blocks light, a portion where the ITO film absorbs some light, and a Cr oxide based film. The portion of the transparent substrate on which the and ITO films are not formed is a portion that completely passes light.
상기와 같이 광을 완전히 차단하거나 완전히 통과 시키는 영역 외에 광의 일부를 흡수하는 영역을 구성함으로써, 그 광 흡수층에 의하여 포토레지스트의 패턴의 두께가 임으로 조정될 수 있도록 하고, 그 포토레지스트의 패턴을 따라 형성되는 하층의 금속막 등의 패턴을 원하는 모양으로 형성한다.By forming a region that absorbs part of the light in addition to the region that completely blocks or completely passes the light as described above, the thickness of the pattern of the photoresist can be arbitrarily adjusted by the light absorbing layer, and is formed along the pattern of the photoresist. Patterns, such as a lower metal film, are formed in a desired shape.
따라서, 본 발명의 목적은 기판 위에 형성되는 게이트버스라인, 데이터버스라인 및 TFT소자의 패턴의 스텝커버리지 특성을 좋게하고, 포토공정 수를 줄이면서 원하는 모양으로 손쉽게 패턴을 형성할 수 있는 노광마스크를 제공하는데 있고,Therefore, an object of the present invention is to improve the step coverage characteristics of the pattern of the gate bus line, data bus line and TFT elements formed on the substrate, and to reduce the number of photo processes, an exposure mask that can easily form a pattern in a desired shape To provide,
본 발명의 또 다른 목적은 상기 노광마스크를 이용하여 액정표시장치의 기판의 패턴을 형성함으로써, 기판의 제조수율을 향상하고, 제조비용을 절감하는데 있다.Still another object of the present invention is to form a pattern of a substrate of a liquid crystal display using the exposure mask, thereby improving the manufacturing yield of the substrate and reducing the manufacturing cost.
도 1은 일반적인 액정표시장치의 평면도이고,1 is a plan view of a general liquid crystal display device;
도 2는 도 1의 단면도이고,2 is a cross-sectional view of FIG. 1,
도 3a∼도 3c는 종래의 노광방법의 한 예를 설명하기 위한 단면도이고,3A to 3C are cross-sectional views for explaining an example of a conventional exposure method,
도 4a∼도 4c는 종래의 노광방법의 다른 예를 설명하기 위한 단면도이고,4A to 4C are cross-sectional views for explaining another example of the conventional exposure method,
도 5a∼도 5c는 본 발명의 노광방법의 한 예를 설명하기 위한 단면도이고,5A to 5C are cross-sectional views for explaining one example of the exposure method of the present invention.
도 6a∼도 6c는 본 발명의 노광방법의 다른 예를 설명하기 위한 단면도이고,6A to 6C are cross-sectional views for explaining another example of the exposure method of the present invention;
도 7a, 도 7b는 본 발명의 노광마스크의 단면도이다.7A and 7B are cross-sectional views of the exposure mask of the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
10,20 투명기판 25 ITO막10,20 Transparent substrate 25 ITO film
30 Cr산화막 88,188 노광마스크30 Cr oxide film 88,188 exposure mask
88a,188a 광투과부 88b,188b 광차단부88a, 188a light transmitting part 88b, 188b light blocking part
188c 광 흡수부 90,91 금속막188c Light Absorption Section 90,91 Metal Film
90a,91a 금속패턴막 100 포토레지스트막90a, 91a Metal Pattern Film 100 Photoresist Film
100a 포토레지스트 패턴100a photoresist pattern
본 발명의 목적 달성을 위하여 본 발명의 노광마스크는 광이 투과되는 영역, 광이 차단되는 영역, 광의 일부가 흡수되는 영역으로 패턴이 구성된다.In order to achieve the object of the present invention, the exposure mask of the present invention is a pattern is composed of a region through which light is transmitted, a region through which light is blocked, and a region where a portion of light is absorbed.
상기 노광마스크의 광이 차단되는 영역의 패턴은 Cr산화막에 의하여 구성되고, 광의 일부가 흡수되는 영역의 패턴은 ITO막에 의하여 구성되고, 광이 투과되는 영역의 패턴은 투명기판의 양면 노출에 의하여 구성된다.The pattern of the region where the light of the exposure mask is blocked is constituted by Cr oxide film, the pattern of the region where part of the light is absorbed is constituted by the ITO film, and the pattern of the region where light is transmitted is exposed by double-sided exposure of the transparent substrate. It is composed.
상기 노광마스크는 투명기판 위에 ITO막의 패턴과 Cr산화막의 패턴을 적층하여 구성된다.The exposure mask is formed by laminating a pattern of an ITO film and a pattern of a Cr oxide film on a transparent substrate.
또, 상기 노광마스크는 투명기판 위에 Cr산화막의 패턴을 형성하고, 상기 Cr산화막의 내부에 제1 ITO막의 패턴을 형성하여 구성한다.The exposure mask is formed by forming a pattern of a Cr oxide film on a transparent substrate and forming a pattern of a first ITO film inside the Cr oxide film.
특히, 상기 ITO막은 20%∼40%의 광을 흡수하여 차단하도록 구성된다.In particular, the ITO film is configured to absorb and block 20% to 40% of light.
상기와 같이 구성되는 노광마스크를 이용하여 액정표시장치의 기판의 패턴을 형성하는 방법은 적어도 1층이상의 금속막 또는 비금속막이 적층된 기판에 포토레지스트막을 형성하는 공정, 상기 포포레지스트막이 형성된 기판위에 광이 투과되는 영역, 광이 차단되는 영역, 광의 일부가 흡수되는 영역으로 패턴이 형성된 노광마스크를 위치맞춤하여 상기 포토레지스트를 노광하는 공정을 포함한다.A method of forming a pattern of a substrate of a liquid crystal display device by using the exposure mask configured as described above is a step of forming a photoresist film on a substrate on which at least one metal film or a non-metal film is laminated, and light on the substrate on which the photoresist film is formed. And exposing the photoresist by aligning an exposure mask on which a pattern is formed into a region to be transmitted, a region where light is blocked, and a region where a portion of light is absorbed.
이하, 본 발명의 노광마스크를 이용한 패턴형성 방법을 도 5a∼도 5c 및 도 6a∼도 6c를 참고하여 상세히 설명한다.Hereinafter, a pattern forming method using the exposure mask of the present invention will be described in detail with reference to FIGS. 5A to 5C and 6A to 6C.
먼저, 도 5a와 같이 투명기판(10) 위에 금속막(90)을 증착하여 형성하고, 상기 금속막 위에 하나의 예로 포지형의 포토레지스트(100)를 소정의 두께로 도포한 기판을 준비한다.First, as shown in FIG. 5A, a metal film 90 is deposited on the transparent substrate 10, and a substrate on which the positive photoresist 100 is coated to a predetermined thickness is provided as an example on the metal film.
상기 포토레지스트가 도포된 기판에 광 투과부(188a), 광 차단부(188b), 20%∼40%의 광을 흡수하는 광 흡수부(188c)로 구성되어 있는 노광마스크(88)를 위치 맞춤한다.Position the exposure mask 88 including the light transmitting portion 188a, the light blocking portion 188b, and the light absorbing portion 188c that absorbs 20% to 40% of the light on the photoresist-coated substrate. .
이어서, 상기 노광마스크(188)가 위치 맞춤된 기판 위에 UV광 등을 조사하면 노광마스크(188)의 광 투과부(188a)와, 광 흡수부(188b)를 통과한 UV광이 포토레지스트(100)와 반응하여 포토레지스트(100)가 현상되고, 그 포토레지스트의 노광 현상에 의하여 도 5b와 같이 금속막(90) 위에 소정의 포토레지스트 패턴(100a)이 형성된다.Subsequently, when the exposure mask 188 is irradiated with UV light or the like on the positioned substrate, the UV light passing through the light transmitting part 188a and the light absorbing part 188b of the exposure mask 188 is photoresist 100. In response to the photoresist 100 is developed, a predetermined photoresist pattern 100a is formed on the metal film 90 as shown in FIG. 5B by the exposure development of the photoresist.
상기 광 흡수부를 통과한 빛은 상기 광 흡수부에 의하여 일부가 흡수되므로 포토레지스트에 도달하는 빛의 양이 적어지고, 그에 따라 포토레지스트의 일부 두께만 빛과 반응하게 된다.Since the light passing through the light absorbing portion is partially absorbed by the light absorbing portion, the amount of light reaching the photoresist decreases, so that only a partial thickness of the photoresist reacts with the light.
상기 포토레지스트(100)가 노광 현상에 의하여 소정의 패턴으로 형성되면 그 포토레지스트의 패턴을 소정의 온도로 경화한 후, 상기 포토레지스트(100a)의 패턴을 따라 하층의 금속막(90)을 웨트(wet)에칭이나 드라이(dry)에칭 방법으로 식각하고, 금속막 위에 남아있는 포토레지스트 패턴막(100a)을 제거하여 도 5c와 같은 금속패턴막(90a)을 형성한다.When the photoresist 100 is formed in a predetermined pattern by an exposure phenomenon, the pattern of the photoresist is cured to a predetermined temperature, and then the lower metal film 90 is wetted along the pattern of the photoresist 100a. Etching is performed by wet or dry etching, and the photoresist pattern film 100a remaining on the metal film is removed to form the metal pattern film 90a as illustrated in FIG. 5C.
상기 도 5a 및 도 5c의 구조에서 알 수 있는 것처럼 노광마스크에 광흡수부(188c)가 구성됨으로써, 금속패턴막(90a)을 1회의 포토공정에 의하여 계단형상 즉, 금속패턴막의 두께를 위치에 따라 임으로 조정할 수 있는 구조로 할 수 있다.As can be seen from the structures of FIGS. 5A and 5C, the light absorption part 188c is formed in the exposure mask, so that the metal pattern film 90a is stepped, i.e., the thickness of the metal pattern film is positioned in a single photo process. Therefore, the structure can be arbitrarily adjusted.
본 제조방법에 있어서는 금속패턴막(90a)의 가장자리부가 약간 식각되어 굴곡이 형성될 수 있도록 노광마스크에 광 흡수부(188c)의 패턴을 구성함으로써 금속패턴막(90a) 위에 다른 절연막을 증착할 경우에 절연막이 화살표방향을 따라 금속패턴막을 타고 넘는 스텝커버리지 특성이 개선되므로 단차부에서 층간 금속패턴막의 쇼트불량을 방지할 수 있다.In the present manufacturing method, when an insulating film is deposited on the metal pattern film 90a by forming a pattern of the light absorbing portion 188c in the exposure mask so that the edge portion of the metal pattern film 90a is slightly etched to form a bend. Since the step coverage characteristic of the insulating film passing through the metal pattern film along the arrow direction is improved, short defects of the interlayer metal pattern film at the stepped portion can be prevented.
또한, 도 6a와 같이 투명기판(10) 위에 패턴을 형성하고자하는 제1,제2금속막(90),(91)이 형성되고, 제2금속막 위에는 포지형의 포토레지스트막(100)이 형성되어 있는 기판의 경우에 있어서도 광 투과부(188a), 광 차단부(88b), 광 흡수부(188c)로 구성되어 있는 본 발명의 노광마스크(188)를 이용하면 1회의 포토공정으로 패턴의 형상이 다른 2개의 금속패턴막을 구성할 수 있다.In addition, as shown in FIG. 6A, first and second metal layers 90 and 91 for forming a pattern are formed on the transparent substrate 10, and a positive photoresist layer 100 is formed on the second metal layer. Also in the case of the formed substrate, when the exposure mask 188 of the present invention composed of the light transmitting portion 188a, the light blocking portion 88b, and the light absorbing portion 188c is used, the shape of the pattern can be achieved in one photo process. Two other metal pattern films can be formed.
즉, 도 6b와 같이 2층의 금속막(90)(91)위에 본 발명의 노광마스크(188)를 이용하여 형성된 포토레지스트 패턴막(100a)을 마스크로 하여 하층의 제1,제2금속막(90),(91)을 동시에 웨트(wet)에칭이나 드라이(dry)에칭 방법으로 식각하고, 그 금속막 위에 남아있는 포토레지스트 패턴막(100a)을 제거하면 도 6c와 같이 패턴 형상이 각각 다른 금속패턴막(90a)(91a)이 형성된다.That is, as shown in FIG. 6B, the first and second metal films of the lower layer are formed by using the photoresist pattern film 100a formed on the two metal layers 90 and 91 using the exposure mask 188 of the present invention as a mask. When 90 and 91 are simultaneously etched by wet or dry etching, and the photoresist pattern film 100a remaining on the metal film is removed, the pattern shapes are different as shown in FIG. 6C. Metal pattern films 90a and 91a are formed.
상기와 같이 1회의 포토공정으로 2층을 다른 형상으로 패턴형성할 수 있으므로 포토공정 회수의 과다로 인한 제조불량을 감소시킬 수 있고, 그에 따라 제조수율을 높일 수 있다.As described above, since the two layers may be patterned in different shapes in one photo process, manufacturing defects due to excessive photo process recovery may be reduced, and thus manufacturing yield may be increased.
특히, 본 발명의 노광마스크(188)는 도 7a와 같이 투명기판(20) 위에 ITO(Indium Tin Oxide:25)막을 소정의 패턴으로 형성하고, 상기 ITO막 위에 Cr산화막(30)을 소정의 패턴으로 형성하여 구성하거나, 도 7b와 같이 투명기판(20) 위에 증착된 Cr산화막(30)의 내부에 ITO막(25)의 패턴을 형성하여 구성한다.In particular, the exposure mask 188 of the present invention forms an indium tin oxide (ITO) film on a transparent substrate 20 in a predetermined pattern as shown in FIG. 7A, and forms a Cr oxide film 30 on the ITO film in a predetermined pattern. 7B or a pattern of the ITO film 25 is formed inside the Cr oxide film 30 deposited on the transparent substrate 20 as shown in FIG. 7B.
물론 상기 ITO막과 Cr산화막이 서로 뒤바뀐 구조로 노광마스크의 패턴을 형성하더라도 본 발명이 의도하는 노광마스크의 구조를 구현할 수 있다.Of course, even if the ITO film and the Cr oxide film are inverted with each other to form a pattern of the exposure mask can implement the structure of the exposure mask intended by the present invention.
상기 도 7a 및 도 7b의 구조에 있어서, 188a의 영역은 광 투과부로 작용하고, 188b의 영역은 광 차단부로 작용하고, 188c의 영역은 20%∼40%의 광을 흡수하는 광 흡수부로 작용한다.In the structures of FIGS. 7A and 7B, the region of 188a serves as a light transmitting portion, the region of 188b serves as a light blocking portion, and the region of 188c serves as a light absorbing portion that absorbs 20% to 40% of light. .
상기 도 7b의 188c 영역의 광 흡수부는 ITO막(25)을 얇은 Cr산화막(25)이 센드위치하여 구성되는 것으로써 Cr산화막의 두께에 따라 광의 흡수량을 미세조정할 수 있다.The light absorbing portion in the region 188c of FIG. 7B is formed by the thin Cr oxide film 25 being placed in the ITO film 25, so that the amount of light absorption can be finely adjusted according to the thickness of the Cr oxide film.
본 발명의 노광마스크의 구조는 광을 차단하거나 통과시키는 2분법적 방법 으로 광의 투과를 컨트롤하는 종래의 노광마스크 구조와는 달리 광의 일부를 흡수하는 광 흡수층을 추가로 구성함으로써, 3분법적 이상의 방법으로 광의 투과를 컨트롤할 수 있도록 구성되는 것을 특징으로 함으로써, 상기 노광마스크에 의하여 패턴이 형성된 금속막의 단차부는 스텝커버리지의 특성이 좋아지도록 모양을 구성할 수 있고, 적층된 2개의 금속층을 한번의 포토공정으로 각기 다른 모양의 패턴으로 형성할 수 있어서 포토공정 과정에서 발생하는 불량을 줄임과 아울러 기판의 제조수율을 향상하는 효과가 있다.The structure of the exposure mask of the present invention differs from the conventional exposure mask structure that controls the transmission of light in a two-part method of blocking or passing light, thereby further comprising a light absorbing layer that absorbs a portion of the light, thereby providing a method of three or more steps. It is characterized in that it is configured to control the transmission of light, the stepped portion of the metal film patterned by the exposure mask can form the shape so that the characteristics of the step coverage is improved, and the two stacked metal layers in one photo Since the process can be formed in a pattern of a different shape, there is an effect to reduce the defects generated in the photo process process and to improve the manufacturing yield of the substrate.
Claims (6)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100590754B1 (en) * | 1999-03-12 | 2006-06-15 | 삼성전자주식회사 | Manufacturing method of thin film transistor substrate for liquid crystal display |
| KR100590753B1 (en) * | 1999-02-27 | 2006-06-15 | 삼성전자주식회사 | Thin film transistor substrate for liquid crystal display and manufacturing method thereof |
| KR100601168B1 (en) * | 1999-05-13 | 2006-07-13 | 삼성전자주식회사 | Thin film transistor substrate and manufacturing method thereof |
| KR100601167B1 (en) * | 1999-02-22 | 2006-07-13 | 삼성전자주식회사 | Photolithographic etching method of a thin film and manufacturing methods of a thin film transistor array panel for a liquid crystal display using the same |
| KR100601170B1 (en) * | 1999-04-26 | 2006-07-13 | 삼성전자주식회사 | Thin film transistor panels for display device and manufacturing methods thereof |
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| JPH02299125A (en) * | 1989-05-15 | 1990-12-11 | Canon Inc | Forming method for electrode and electron beam display device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100601167B1 (en) * | 1999-02-22 | 2006-07-13 | 삼성전자주식회사 | Photolithographic etching method of a thin film and manufacturing methods of a thin film transistor array panel for a liquid crystal display using the same |
| KR100590753B1 (en) * | 1999-02-27 | 2006-06-15 | 삼성전자주식회사 | Thin film transistor substrate for liquid crystal display and manufacturing method thereof |
| KR100590754B1 (en) * | 1999-03-12 | 2006-06-15 | 삼성전자주식회사 | Manufacturing method of thin film transistor substrate for liquid crystal display |
| KR100601170B1 (en) * | 1999-04-26 | 2006-07-13 | 삼성전자주식회사 | Thin film transistor panels for display device and manufacturing methods thereof |
| KR100601168B1 (en) * | 1999-05-13 | 2006-07-13 | 삼성전자주식회사 | Thin film transistor substrate and manufacturing method thereof |
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