JPH02299125A - Forming method for electrode and electron beam display device - Google Patents

Abstract

PURPOSE:To form an electrode in a pattern different from the light nontransparent pattern serving as a photo-mask on a substrate and form a shape different from the spacer opening pattern by arranging a light reflecting layer. CONSTITUTION:A light nontransparent electrode pattern 2 is formed with a Cr material at the preset thickness by the vacuum deposition method and the photolithograph etching method on a light transparent substrate 1 made of quartz glass or the like. An ITO film 3 of a transparent electrode is vacuum-formed at the preset thickness on the lower face of the substrate 1, and a positive type photo-resist 4 is coated on it. A light reflecting plate 5 is arranged about 60mum apart from the resist 4, and the ultraviolet parallel light 6 is radiated from the above of the substrate 1 for exposure. The light reflecting plate 5 is formed into a shape arranged with a plane portion and square cones at the pitch of about 50mum, and it is manufactured by machining a glass material. The photo-resist near square cones of the light reflecting plate 5 is wholly eliminated after exposure and development, the photo-resist near the plane section forms a shape smaller than the electrode pattern 2, then an ITO electrode 3' is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode forming method and a display device that utilize a resist pattern shape obtained by self-line exposure using a reflector.

[Prior Art] In general, the formation of electrodes using resist patterns using the self-line exposure method eliminates the alignment process by not using a photomask, simplifies the process, and provides absolute positional accuracy between the substrate pattern serving as a mask and the electrode pattern. In the improvement section.

In the conventional method of forming electrodes using self-line exposure, a light-opaque pattern, such as an electrode pattern, on a light-transmitting substrate is usually transferred to a resist pattern on the substrate in a 1:1 ratio, thereby changing the electrode shape. This method also forms a pattern with the same shape as the light-opaque pattern on the substrate, or an inverted pattern.

FIGS. 11(a), (b), and (c) are diagrams showing a conventional example. In FIG. 11, 27 is a light-transmissive substrate, 28 is a light-impermeable electrode pattern formed on the substrate 27, and 29 is a transparent conductive material deposited on the opposite surface of the substrate 27 to the surface on which the electrode pattern is formed. I, which is a membrane
The TO film 30 is a photoresist coated on the 9 surfaces of the 2 ITO films.

As shown in FIG. 3A, parallel ultraviolet light 6 is irradiated from the upper surface of the substrate, and the photoresist 30 is exposed to ultraviolet light that has passed through the substrate 27 and ITO film 29 using the electrode pattern 28 as a photomask. When the photoresist 30 is a positive type resist, a photoresist pattern 30' having the same shape as the electrode pattern 28 can be formed as shown in FIG. 3(b). Next, the ITO film 29 is etched using the obtained photoresist pattern 30' as an etching mask, and the ITO electrode 29', which is a transparent conductive film having the same shape as the electrode pattern 28, is etched.
is formed.

[Problems to be Solved by the Invention] However, in the above conventional example, since the electrode pattern on the substrate directly becomes a photomask, it is not possible to obtain a resist pattern different from the electrode pattern, that is, the light-opaque pattern. This method had a problem in that it was not possible to form a shaped electrode.

Furthermore, since Selfaline utilizes light transmission, it is not possible to use materials other than light transmitting materials as the substrate material. Furthermore, the electrode material to be formed must also be a light-transmitting material, and there is a drawback in that only very limited materials can be used for both the substrate material and the electrode material to be formed.

[Means for Solving the Problems (and Effects)] According to the present invention, by disposing a light reflecting plate on the opposite side of the light irradiation surface of the substrate, the direction of the light transmitted through the substrate is directed by the reflecting plate. Alternatively, unexposed photoresist areas can be exposed. This makes it possible to form a photoresist pattern with a shape different from that of the light-opaque pattern on the substrate, and this is used to form the electrodes.

Furthermore, even if a substrate made of a light-opaque material is used, partial openings are provided in the substrate and the light transmission is utilized to form an electrode having a shape different from that of the opening pattern. be able to.

In addition, as a method for forming the electrode, an etching method or the like can be used after forming the resist pattern, and by side-etching the side wall of the substrate or structure that is the electrode support, the formed electrode can be formed into an overhanging shape. Therefore, the electron beam is less likely to be irradiated onto the electrode support (and charge-up on the electrode support can be reduced).

Hereinafter, the present invention will be described in detail based on the drawings. A first embodiment of the present invention is shown in FIGS. 1(a), (b), (c) and FIG.

In FIG. 1, 1 is a light-transmitting substrate made of glass material;
2 is a light-opaque electrode pattern formed on the upper surface of the substrate; 3
4 is an ITO film which is a transparent conductive film deposited on the lower surface of the substrate 1; 4 is a positive photoresist coated on the ITO film 3;
Reference numeral 5 denotes a light reflecting plate disposed close to the coated surface of the photoresist 4.

FIG. 2 is a perspective view showing the light reflecting surface of the light reflecting plate 5 shown in FIG. As shown in the figure, the reflecting surface of the light reflecting plate 5 has a flat central portion and a shape in which square pyramids are lined up at both ends.

The reflective surface of the light reflecting plate 5 is arranged to face the photoresist 4, and as shown in FIG. 1(a), parallel light 6 having a wavelength to which the photoresist is sensitive is irradiated from the upper surface of the substrate 1. As a result, the parallel light 6 is reflected at the position of the electrode pattern 2, and the other parts are exposed to the substrate l and ITO.
The light passes through the film 3 and reaches the photoresist 4 for exposure. Further, the parallel light 6 passes through the photoresist 4, reaches the surface of the light reflecting plate 5, and is reflected. At this time, the parallel light 6 is reflected in a divergent manner at both ends of the light reflecting plate 5 having a square pyramid shape. Then, this divergent 1 reflected light reaches the photoresist 4 again and performs re-exposure, but the electrode pattern 2
The photoresist 4 located below is also exposed. Therefore, the photoresist 4 near the square heel of the light reflecting plate 5 is exposed despite the presence of the electrode pattern 2, so that no photoresist pattern is formed under the electrode pattern 2 after development. On the other hand, since the central part of the light reflecting plate 5 is a flat surface, the parallel light 6 is reflected in a direction substantially perpendicular to the reflecting surface. Areas other than the vicinity of the outer shape of pattern 2 are not exposed. Therefore, the photoresist near the flat part of the light reflecting plate 5 has a shape substantially the same as or smaller than the shape of the developed electrode pattern 2, thereby forming a photoresist pattern 4'. Such a photoresist pattern 4'
The cross-sectional shape of is shown in FIG. 1(b).

In addition, the photoresist pattern 4 obtained in FIG. 1(b)
FIG. 1C shows the cross-sectional shape of the ITO electrode 3' after the ITO film 3 is etched using a photoresist pattern 4' and the photoresist pattern 4' is peeled off.

In this embodiment, both ends of the light reflecting plate 5 are shaped like a square pyramid, but the shape is not limited to this (it may also be a surface that reflects light diffusely, such as a sanded surface of glass. Although the central part of the light reflecting plate 5 is made flat, for example, the light reflecting plate 5 may be partially removed, or more specifically, it may have a hole so that the parallel light 6 is not reflected at all.Furthermore, In order to partially reduce the amount of light reflection, a blackening material such as carbon material is partially coated on a material with high light absorption rate, such as a light reflecting plate in the shape of a square pyramid on the entire surface, and the nearby photoresist is exposed. Alternatively, it is possible to prevent re-exposure. Exposure or re-exposure of the photoresist can also be controlled by the presence or absence of a metal coating with high light reflectance.

FIGS. 3(a), (b), and (C) show the second embodiment of the present invention.
An embodiment of the invention is shown.

In FIG. 3, numeral 7 denotes a spacer made of glass material and having a plurality of partial openings in a flat plate.

8 is an electrode material made of a metal thin film deposited on the upper surface of the spacer 7, 9 is a negative photoresist coated on the electrode material 8, 5 is a light reflecting plate, and 6 is a parallel beam.

In this figure, as in the first embodiment, a light reflecting plate 5 is placed close to the photoresist 9, and parallel light 6 is irradiated from the lower surface of the spacer 7. As a result, the parallel light 6 that has passed through the opening of the spacer 7 and the photoresist 9 is reflected by the light reflecting plate 5, and the photoresist 9 is partially exposed again. When the exposed photoresist 9 is developed, the third
As shown in Figure (b), at both ends of the light reflecting plate 5 where the reflection angle is large, the entire surface of the photoresist 9 is exposed to light and remains on the electrode material 8. In addition, in the central portion where the reflection angle is small, the photoresist 9 in the central portion 9 of the electrode material 8 is not exposed to light, so that the electrode material 8 has a removed shape.

The electrode material 8 is etched using the photoresist pattern 9' obtained in FIG.
The cross-sectional shape of the electrode 8' after peeling off is shown in FIG. 3C.

As described above, by arranging the light reflecting plate 5 close to the photoresist surface and re-exposing the photoresist surface by reflecting parallel light, the shape of the light-impermeable electrode pattern 2 and the electrode material 8 differs. It is possible to form different resist patterns, and furthermore, it is possible to form electrode patterns of different shapes. These different patterns can be adjusted by adjusting the presence or absence of reflection from the light reflecting plate, the reflection angle, the reflection direction, the set position (distance to the photoresist), etc.

In particular, in the second embodiment, the support for the electrode to be formed is a spacer substrate having an opening, and the electrode material 8 deposited on the upper surface of this spacer is first self-lined during deposition in a pattern of openings in the spacer, and then , the electrode material 8 itself becomes a light-opaque pattern for self-line exposure using the reflective plate of the present invention. Furthermore, it also serves as an electrode material that is etched by the self-aligned resist pattern, and can be finally formed into a shape that is completely different from the open pattern of the spacer.

In this embodiment, the case where etching was used as the electrode formation method was described, but the present invention is not limited to this.
It goes without saying that the formed photoresist pattern can be used for lift-off formation of a thin film or as a resist for plating.

[Example] Examples of the present invention will be specifically described in detail below.

1(a), an electrode pattern 2 made of a Cr material having a thickness of 1000 mm is formed on a substrate 1 made of quartz glass by vacuum evaporation and photolithography. Next, ITO, which is a transparent electrode, is placed on the bottom surface of the substrate 1 to a thickness of 1000 mm.
A vacuum film was formed, and then 0FPR80 manufactured by Tokyo Ohka Kogyo ■ was applied on top of it.
A 0-positive type photoresist 4 was applied. A light reflecting plate 5 was placed approximately 60 μm apart from the surface of the photoresist 4, and parallel ultraviolet light 6 was irradiated from above the substrate 1 for exposure.

As shown in FIG.
It consists of square pyramids arranged at a pitch of #Lm, and was created by machining a glass material.

The surface of the square heel is vacuum-deposited with aluminum.

After exposure and development, as shown in FIG. 1(b), all of the photoresist near the rectangular trowel portion of the light reflecting plate 5 disappeared, and the photoresist near the flat portion was formed in a slightly smaller shape than the electrode pattern 2. The ITO film 3 was wet-etched using the obtained photoresist pattern, and then the photoresist was peeled off to obtain the ITO electrode 3' shown in FIG. 1(c).

In FIG. 4, reference numeral 7 denotes a spacer made of glass material and having an opening 10, and the opening 10 has an opening size of approximately 16 mm.
00pmX 400 p, tn, opening interval approximately 800
It is pm. 8 is an electrode material made of a metal thin film deposited on the upper surface of the spacer 7, and 9 is a negative photoresist coated on the electrode material 8. Reference numeral 11 denotes a light reflecting plate, which, as shown in FIG. 5, has a linear slope with a pitch of about 125 gm. 6 indicates parallel light.

As shown in Figure 4 (a), first, a photosensitive glass material (l
(manufactured by OYA or Corning), the spacer 7 provided with the opening 10 was formed. Next, an electrode material 8 made of Ni having a thickness of approximately 5,000 yen was deposited on the upper surface of the spacer 7 by a vacuum film forming method, and a dry film negative photoresist 9 was coated thereon. After that, the light reflecting plate 11
The light reflecting surface of is opposed to the photoresist 9 and
pm position, and parallel ultraviolet light 6 was irradiated from the lower surface of the spacer 7.

Here, the parallel light 6 exposes the photoresist 9 located in the opening 10, and the transmitted light is further reflected by the light reflecting plate 11 to partially expose the photoresist 9 on the electrode material 8. At this time, the photoresist 9 in the direction perpendicular to the linear slope on the surface of the light reflecting plate 11 is exposed to a position deeper than the opening because the angle of light reflection is large, but the photoresist 9 in the direction parallel to the linear slope Since the angle of light reflection is small, only the vicinity of the opening is exposed. Hence, exposure.

The photoresist pattern after development was obtained in the form of a continuous line in the direction perpendicular to the linear slope of the light reflecting plate 11, as shown in FIG. 4(b).

When the electrode material 8 was wet-etched using the line-shaped photoresist 9' and the line-shaped photoresist 9' was peeled off, the electrode material 8 was removed as shown in FIG. 4(C).
Line-shaped electrodes 8 connected at the position of the opening 10
' could be formed. Furthermore, the adjacent lines of each electrode were electrically isolated and insulated from each other, and did not form a short circuit.

When the electrodes and spacers formed in this example are placed between a multi-electron-emitting device substrate arranged in a line and a face plate on which a phosphor and a transparent conductive film are deposited, and electrons are emitted under vacuum, Such an electrode is used as a modulation electrode for emitted electrons, and such a spacer is used as a member for maintaining a distance between the electron emitting substrate and the face plate,
It was possible to create an electron beam display device.

A partial configuration diagram of the electron beam display device in this case is shown in FIG. In this figure, 12 is an electron-emitting device substrate, 13
14 is an electron emitting part, 14 is a phosphor, 15 is a transparent conductive film,
16 is the face plate, 7 is the spacer.

8' is an electrode.

``Doctor L''--FIG. 7 shows a third embodiment of the present invention. In this embodiment, the spacer 7 in the second embodiment is replaced by a support for an electrode that is to form a focus electrode used in an electron beam display device. Although the cross-sectional view of FIG. 7 is used for explanation, the method of forming the photoresist, the shape of the opening, etc. are the same as those of FIG. 4.

Figure 7 (a), (b), (C), (d)
, (e) shows a cross-sectional view in the X direction when this embodiment is applied to FIG. 4, and (a'), (b'), (c
'), (d'), and (e') show cross-sectional views in the Y direction.

In FIGS. 7(a) and (a'), 17 is a focus electrode material made of a thin metal plate, 18 is an insulating layer deposited on the upper surface of the focus electrode material 17, 19 is an electrode material deposited on the insulating layer 18, and 20 is a focus electrode material made of a thin metal plate. A resist 21 is coated and patterned on the lower surface of the focus electrode material 17, and a photoresist 21 is coated on the electrode material 19. Figure 7 (a), (a)
As shown in , an insulating layer 1 made of a SiO□ thin film with a thickness of 5 pm is formed on the upper surface of the focus electrode material 17 by a vacuum film forming method.
8 and an electrode material 19 made of a Ni thin film with a thickness of 1 μm was deposited. Thereafter, the resist 20 is patterned as an etching resist for providing openings, and the resist 21 is
was applied onto the electrode material 19 to protect it from etching.

Etching is performed using such a resist, and the result is shown in FIG. 7(b).
) and (b') were provided, and the resists 20 and 21 were peeled off to form a focus electrode 17'. Next, as shown in FIGS. 7(c) and 7(c'), the electrode material 19 is coated with a dry film negative photoresist 9, the light reflecting plate 11 is placed, and the focus electrode 17' is exposed from the bottom surface of the focus electrode 17'. Parallel ultraviolet light 6 was irradiated. Here, the parallel light 6 is reflected by the light reflecting plate 11, and also partially exposes the photoresist 9 on the electrode material 19. However, since the reflection angle of the light reflecting plate 11 is shallow in the X-direction cross-section shown in FIG. 7(c) and deep in the Y-direction cross-section, the photoresist pattern after exposure and development is as shown in FIGS. 7(d) and (d'). ) (In the X direction, the photoresist 9 in the center on the electrode material 19 is unexposed and removed, but in the Y direction, the entire surface of the photoresist 9 on the electrode material 19 is exposed and left. A linear photoresist pattern 9' as shown in FIG. 4(b) was obtained.

The electrode material 19 is wet-etched using this line-shaped photoresist pattern 9', and the photoresist pattern 9'
When the electrode material 19 was peeled off, it was possible to form a linear electrode 19' in which the electrode material 19 was joined at the position of the opening, as shown in FIGS. 7(e) and 7(e').

Electrode 19' and focus electrode 1 formed in this example
7' as the modulation electrode and the focus electrode as in Example 2, an electron beam display device could be obtained. Furthermore, in the case of an electron beam display device, the insulating layer 18 of the electrode formed as shown in FIG. Charge-up of the insulating layer 18 due to valence electrons was reduced.

A fourth embodiment of the present invention is shown in FIG. In FIG. 9, 22 is a spacer made of photosensitive glass, 23 is a focus electrode made of a Ni thin film with a thickness of 1 pm, and 24 is an insulating layer made of a SiO□ thin film with a thickness of 10 pm.

25 is a modulation electrode made of a Ni thin film with a thickness of 1 pm, and 26 is an insulating layer made of a SiO□ thin film with a thickness of 10 μm.

In this embodiment, a focus electrode 23. Insulating layer 24. The modulating electrode 25 and the insulating layer 26 are sequentially deposited, and the modulating electrode 25 and the insulating layer 26 are formed in a line shape by the electrode forming method of the present invention using a light reflecting plate. After formation, side etching was performed on the insulating layers 24 and 26 by wet etching to set them back from the electrodes. This could be used in an electron beam display device as in Example 2. A partial configuration diagram of the electron beam display device in this case is shown in FIG. 1O.

[Effects of the Invention] As described above, by arranging a light reflecting plate, an electrode can be formed in a shape different from that of a light-opaque pattern that is to be a photomask on a substrate. Conventionally, a light-transmitting substrate material must be used as a material for resist pattern formation using the self-line exposure method, and when using the etching method, the workpiece must be a transparent film such as ITO. there were. However, according to the self-line exposure method of the present invention, it is also possible to use a light-opaque substrate that has an aperture through which light can pass, and furthermore, it is possible to use a light-opaque substrate that has an aperture through which light can pass. This has the effect of making it possible to process and pattern objects, making it possible to process a wide range of materials.

In addition, because the self-line exposure method is used, the mutual positional accuracy of the light-opaque pattern that is to become a photomask on the substrate and the formed electrode pattern is very good, and the special There is no need to create a photomask, and the mask alignment process can be omitted and the process can be simplified.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing the first embodiment and first example of the present invention, and FIG. 2 is a sectional view showing the light reflecting plate used in the first embodiment and first example of the present invention. FIG. 3 is a sectional view showing a second embodiment of the present invention; FIG. 4 is a perspective view showing a second embodiment of the present invention; FIG. 5 is a cross-sectional view showing a second embodiment of the present invention. FIG. 6 is a sectional view showing a display device according to a second embodiment of the present invention, and FIGS. 7 and 8 are a perspective view showing a light reflecting plate used in an embodiment of the present invention. 9 is a sectional view showing the fourth embodiment of the present invention; FIG.
FIG. 11 is a sectional view showing a display device according to a fourth embodiment of the present invention, and FIG. 11 is a sectional view showing a conventional example. 1.27 - Light-transparent substrate 2.28 - Light-opaque electrode pattern 3.29 - ITO film 3', 29' - ITO electrode 4 - Positive photoresist 4', 9', 30' - Photoresist pattern 5 - Light reflecting plate 6 - Parallel light 7.22 - Spacer 8 - Electrode material 8' - Electrode 9 - Negative photoresist l〇 - Opening 11 - Light reflecting plate 12 - Electron emitting device substrate 13 - Electron emitting part 14 - Phosphor 15 - Transparent conductive film (ITO film) 16 - Face plate 17, 23 - Focus electrode material 17' - Focus electrode 18, 24, 26 - Insulating layer 19 - Electrode material 19' - Electrode 20 - Patterned resist 21.30 - Photoresist 25 - Modulation electrode

Claims (6)

[Claims] (1) At least a part of the electrode support made of a substrate or a structure is light-transmissive, and in self-alignment exposure for transferring the light-transmitting pattern to the photoresist on the electrode support, the photoresist coated surface is A light reflecting plate is arranged, and the photoresist is exposed to light reflected by the light reflecting plate, and in the obtained photoresist pattern shape,
A method for forming an electrode, the method comprising forming an electrode. (2) The method for forming an electrode according to claim 1, wherein the side wall of the electrode support is side-etched. (3) the electrode support is made of a light-opaque material;
2. The method of forming an electrode according to claim 1, further comprising using a substrate partially having an opening through which light passes. (4) When forming an electrode of an electron beam display device including at least an electron-emitting device substrate, a target for forming an image, and a spacer disposed between the device substrate and the target, the spacer is used as a support for the electrode. 2. The method of forming an electrode according to claim 1, wherein the method is used as an electrode. (5) Formation of the electrode according to claim 1, characterized in that a spacer having a focus electrode on the electrode support side surface of the spacer and having an insulating layer on the focus electrode is used as the electrode support. Method. (6) An electron beam display device comprising an electrode obtained by the method according to any one of claims 1 to 5.