KR20000031410A - Forming method of light shielding film of charge coupled device by high frequency plasma etching - Google Patents
Forming method of light shielding film of charge coupled device by high frequency plasma etching Download PDFInfo
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- KR20000031410A KR20000031410A KR1019980047452A KR19980047452A KR20000031410A KR 20000031410 A KR20000031410 A KR 20000031410A KR 1019980047452 A KR1019980047452 A KR 1019980047452A KR 19980047452 A KR19980047452 A KR 19980047452A KR 20000031410 A KR20000031410 A KR 20000031410A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000001020 plasma etching Methods 0.000 title claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000010849 ion bombardment Methods 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- XJVBHCCEUWWHMI-UHFFFAOYSA-N argon(.1+) Chemical compound [Ar+] XJVBHCCEUWWHMI-UHFFFAOYSA-N 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 9
- 230000010354 integration Effects 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract description 4
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 239000002923 metal particle Substances 0.000 abstract description 2
- 239000007787 solid Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
Description
본 발명은 고주파 플라즈마 에칭에 의한 고체촬상소자의 차광막 형성방법에 관한 것으로, 특히 고체촬상소자의 차광막으로 사용되는 메탈층의 단차부분에 완만한 슬로프를 형성해 주어 마이크로 렌즈를 통해 입사되는 광 집적효율을 향상시킬 수 있는 고주파 플라즈마 에칭에 의한 고체촬상소자의 차광막 형성방법에 관한 것이다.The present invention relates to a method for forming a light shielding film of a solid state image pickup device by high frequency plasma etching, and in particular, by forming a gentle slope in a step portion of a metal layer used as a light shielding film of a solid state image pickup device to reduce light integration efficiency incident through a microlens. A light shielding film forming method of a solid state image pickup device by high frequency plasma etching which can be improved.
잘 알려진 바와같이 1970 년대에 들어서면서 MOS LSI 기술의 발전과 함께 등장한 이래 발전해 온 고체촬상소자(CCD;Charged Coupled Device)는 캠코더, 비디오폰 및 디지털 카메라에서 사용되는 장치로서, 앞으로도 사무자동화 기기 등에서 활용범위가 넓은 디바이스이다.As is well known, the Charged Coupled Device (CCD), which has been developed since the advent of the MOS LSI technology in the 1970s, is used in camcorders, video phones, and digital cameras. It is a wide range of devices.
도 1 은 종래의 고체촬상소자의 층상 구조를 보인 단면도로서, 하나의 셀을 도시하고 있다. 이를 도시된 층상 구조에 의거하여 설명하면, n형 기판(2) 상에 형성된 p- 웰(4)의 상부에 이온주입 방법에 의해 하이 도핑된 n+ 수광 영역(6)이 형성되어 pn 접합 포토다이오드를 형성하고 있고, 상기 n+ 수광 영역(6)의 측방으로 로우 도핑된 n+ 도전 영역(8)이 형성되어 상기 n+ 수광 영역(6) 및 p- 웰(4) 영역과 함께 MOS 트랜지스터를 형성하고 있으며, 그 상부에는 절연층(10)이 형성됨과 아울러 절연층(10)의 상부에는 드라이버소자의 구동신호를 인가하기 위한 전송전극(12) 및 상기 n+ 수광 영역(6)에 대응하는 부분이 오픈된 차광막(14)이 순차 형성되고, 상기 차광막(14)의 상부로는 입사광선을 투과시키는 칼라필터(16) 및 마이크로 렌즈(18)가 순차 배치되고, 그 위로 유리기판(20)이 덧대어진 구조로 되어 있다.1 is a cross-sectional view showing a layered structure of a conventional solid state image pickup device, showing one cell. Based on the illustrated layer structure, a high-doped n + light-receiving region 6 is formed by an ion implantation method on the p-well 4 formed on the n-type substrate 2 to form a pn junction photodiode. And n + conductive regions 8 which are low-doped to the side of the n + light receiving region 6 are formed to form a MOS transistor together with the n + light receiving region 6 and the p-well 4 region. In addition, an insulating layer 10 is formed on the upper portion, and a transfer electrode 12 and a portion corresponding to the n + light-receiving region 6 for applying a driving signal of a driver element are opened on the insulating layer 10. A light shielding film 14 is sequentially formed, and a color filter 16 and a micro lens 18 for transmitting incident light are sequentially disposed on the light blocking film 14, and the glass substrate 20 is padded thereon. It is.
이러한 구조로 된 고체촬상소자는 구동회로의 신호전하를 전송하는 전송전극(12)과 상기 n+ 도전 영역(8)과의 사이의 절연막(10)에 의해 역치전압(thresold voltage)이 설정되어지며, 입사광선의 수광시에 n+ 수광 영역(6)의 신호전하가 이동하는 통로가 되는 채널은 상기 n+ 수광 영역(6)과 n+ 도전 영역(8)의 사이에 형성된다. 그리고, 다른 셀 간의 도전영역 사이에는 채널스토퍼(p+)가 형성된다.In the solid state image pickup device having such a structure, a threshold voltage is set by the insulating film 10 between the transfer electrode 12 which transfers the signal charge of the driving circuit and the n + conductive region 8. A channel which becomes a passage through which the signal charge of the n + light-receiving region 6 moves when the incident light is received is formed between the n + light-receiving region 6 and the n + conductive region 8. A channel stopper p + is formed between the conductive regions between the different cells.
상기 차광막(14)은 주로 메탈층으로 형성되는데, 이 메탈층의 형성시 오픈된 부분에서 발생하는 단차에 의해 입사광선을 집광하는 마이크로 렌즈(18) 제작 후의 광 해상도(light resolution) 및 감도(sensitivity)가 저하되고, 이로 인해 전송효율의 감소 및 빛의 잔상이 남는 현상이 발생하게 된다. 이는 마이크로 렌즈(18)에서 집광된 빛을 n+ 수광 영역(6)으로 입사시키는 광 집적 효율이 저하되기 때문에 발생된다.The light shielding film 14 is mainly formed of a metal layer, and the light resolution and sensitivity after fabrication of the microlens 18 condensing incident light by a step generated in an open portion during formation of the metal layer. ) Decreases, resulting in a decrease in transmission efficiency and the afterimage of light. This occurs because the light integration efficiency of injecting the light collected by the microlens 18 into the n + light-receiving region 6 is lowered.
따라서, 본 발명은 차광막으로 사용되는 메탈층의 단차부에 완만한 슬로프를 형성해 주는 구조로 개선할 수 있는 고주파 플라즈마 에칭에 의한 고체촬상소자의 차광막 형성방법을 제공하는데 목적을 두고 있다.Accordingly, an object of the present invention is to provide a method for forming a light shielding film for a solid state image pickup device by high frequency plasma etching, which can be improved to a structure in which a gentle slope is formed in a step portion of a metal layer used as a light shielding film.
상기의 목적을 달성하기 위하여 본 발명에 따르면, 신호전하를 전송하는 전송전극의 상부에 설치되며 마이크로 렌즈를 통해 입사되는 광선을 차폐하는 메탈로 된 차광막을 고주파 플라즈마 에칭 공정을 이용한 아르곤 양이온의 이온 충격에 의해 표면 소프트 에칭하여 상기 차광막의 오픈된 단차부에 완만한 슬로프를 형성하여 줌으로써 마이크로 렌즈를 통해 입사되는 광선의 집적 효율을 향상시킬 수 있도록 한 것을 특징으로 하는 고주파 플라즈마 에칭에 의한 고체촬상소자의 차광막 형성방법이 제공된다.In order to achieve the above object, according to the present invention, an ion bombardment of argon cation using a high frequency plasma etching process on a metal light shielding film installed on top of a transmission electrode for transmitting signal charges and shielding light incident through a microlens. The surface of the solid-state imaging device by the high-frequency plasma etching, characterized in that to improve the integration efficiency of the light incident through the micro lens by forming a gentle slope in the open stepped portion of the light shielding film by A light shielding film forming method is provided.
도 1 은 종래의 고체촬상소자의 층상 구조를 보인 단면도1 is a cross-sectional view showing a layered structure of a conventional solid state image pickup device.
도 2 는 본 발명의 방법을 설명하기 위한 에칭 처리 전과 에칭 처리 후의 차광막의 형상을 보인 고체촬상소자의 일부 발취 단면도Fig. 2 is a partial extraction cross-sectional view of a solid state image pickup device showing the shape of a light shielding film before and after etching for explaining the method of the present invention.
* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
12-전송 전극 140-차광막12-transmission electrode 140-shading film
이하, 도면을 참조하여 본 발명의 바람직한 실시예를 더욱 상세히 설명한다.Hereinafter, with reference to the drawings will be described a preferred embodiment of the present invention in more detail.
참고로, 도 1을 통해 설명한 종래와 동일한 부분에 대하여는 중복설명의 회피와 설명의 명료성을 위하여 동일한 부호를 부여하기로 하며, 본 발명에서 언급하지 않은 도 1 의 부분은 종래와 동일한 구조이다.For reference, the same parts as in the related art described with reference to FIG. 1 will be denoted by the same reference numerals for avoidance of overlapping description and clarity of explanation, and the parts of FIG.
도 2를 통해 알 수 있듯이, 본 발명은 신호전하를 전송하는 전송전극(12)의 상부에 설치되며 마이크로 렌즈(18)를 통해 입사되는 광선을 차폐하는 메탈층으로 된 차광막(140)을 고주파 플라즈마 에칭 공정을 이용한 아르곤 양이온(Ar+)의 이온 충격에 의해 표면 소프트 에칭하여 상기 차광막(140)의 오픈된 표면의 단차부(A)에 완만한 슬로프를 형성하여 주는데 특징이 있다.As can be seen from Figure 2, the present invention is a high frequency plasma shielding film 140 made of a metal layer is installed on the upper portion of the transmission electrode 12 for transmitting the signal charge and shields the light incident through the micro lens 18 The surface soft etching is performed by the ion bombardment of the argon cation (Ar + ) using the etching process to form a gentle slope in the stepped portion A of the open surface of the light shielding film 140.
상기 고주파 플라즈마 에칭 공정은 기존의 고체촬상소자 제조시에 사용되는 자연 산화막 제거용의 고주파 에칭 공정을 고진공 내 인시튜 공정으로 차광막(140)을 형성하기 위한 메탈 데포지션 후에 진행함으로써, 자연 산화막을 제거하는 대신에 차광막(140)의 오픈된 단차부(A)의 표면에 분포하는 메탈 입자들을 이온 충격(ion bombardment)에 의해 떨어뜨려 완만한 슬로프를 형성하여 준다.The high frequency plasma etching process removes the natural oxide film by performing a high frequency etching process for removing the natural oxide film used in the conventional solid state imaging device manufacturing after the metal deposition for forming the light shielding film 140 in an in-vacuum in-vacuum process. Instead, metal particles distributed on the surface of the open stepped portion A of the light blocking film 140 are dropped by ion bombardment to form a gentle slope.
즉, 종래에는 차광막(140) 형성을 위한 메탈 데포지션의 단일 스텝 공정이 진행된 후 기판을 챔버 외부로 반출함에 따라 차광막(140)으로 사용되는 메탈층 위에 자연 산화막이 형성되어 이 자연 산화막을 제거해 주는 공정으로 이행되었으나, 본 발명은 메탈 데포지션 후에 기판을 챔버 외부로 반출하지 않고 메탈을 수세한 후 곧바로 고주파 플라즈마 에칭에 의한 아르곤 이온의 충격으로 메탈층의 단차부(A)에 소프트 에칭이 실현되게 하는 것이다.That is, in the related art, as a single step process of metal deposition for forming the light shielding film 140 is performed, a natural oxide film is formed on the metal layer used as the light shielding film 140 to remove the natural oxide film as the substrate is taken out of the chamber. Although the present invention has been implemented, the present invention allows soft etching to be realized in the stepped portion A of the metal layer due to the impact of argon ions by high frequency plasma etching immediately after washing the metal without carrying the substrate out of the chamber after the metal deposition. It is.
여기에서, 차광막(140)을 형성하는 메탈층의 두께는 4000±500Å정도이고, 이의 에칭 두께는 400Å 정도로 조정함이 바람직하다. 이렇게 얻어지는 메탈층의 에칭율과 선택비는 챔버 내부의 진공도, 가스의 혼합비, 기판의 온도, 방전 전력 등에 따라 달라지기 때문에 그의 조성을 주의 깊게 선택하여야 한다.Here, the thickness of the metal layer forming the light shielding film 140 is about 4000 ± 500 kPa, and the etching thickness thereof is preferably adjusted to about 400 kPa. Since the etching rate and the selectivity of the metal layer thus obtained vary depending on the degree of vacuum in the chamber, the mixing ratio of the gas, the temperature of the substrate, the discharge power, etc., its composition must be carefully selected.
이러한 방법으로 차광막(140)으로 사용된 메탈층의 단차부(A)를 라운드형의 표면으로 형성하면, 차광막(140)의 오픈된 부분의 개구율이 커지게 되므로 차광막(140)의 오픈된 반경보다 렌즈 구경이 큰 마이크로 렌즈(18)로부터 집광되어 입사되는 광의 집적 효율을 향상되며, 이에 따라 고체촬상소자의 광 해상도 및 감도를 향상시킬 수 있게 되는 것이다.In this way, when the stepped portion A of the metal layer used as the light shielding film 140 is formed as a round surface, the opening ratio of the open portion of the light shielding film 140 is increased, so that the opening radius of the light shielding film 140 is larger than the open radius of the light shielding film 140. The integration efficiency of the light that is collected and incident from the microlens 18 having a large lens aperture is improved, thereby improving the optical resolution and sensitivity of the solid state image pickup device.
이상에서 설명한 바와같이 본 발명은 차광막으로 사용되는 메탈층을 침적형성한 후 이 메탈층을 고주파 플라즈마 에칭 공정에 의한 인시튜 공정으로 표면 소프트 에칭하여 마이크로 렌즈와 수광 영역 사이에서 오픈된 차광막의 단차 부분을 라운드형으로 형성하여 줌으로써 광 집적효율을 향상시킬 수 있으므로 고체촬상소자의 광 해상도 및 감도를 향상시킬 수 있는 효과가 있다.As described above, the present invention deposits and forms a metal layer used as a light shielding film, and then surface-etches the metal layer in an in-situ process by a high frequency plasma etching process to open the stepped portion of the light shielding film opened between the microlens and the light receiving region. Since the optical integration efficiency can be improved by forming a round shape, the optical resolution and sensitivity of the solid state image pickup device can be improved.
한편, 본 발명은 특정의 바람직한 실시예에 국한하지 않고 청구범위에 기재된 기술적 권리 내에서는 당업계의 통상적인 지식에 의하여 다양한 응용이 가능함은 물론이다.On the other hand, the present invention is not limited to the specific preferred embodiment, it is a matter of course that a variety of applications are possible by ordinary knowledge in the art within the technical rights described in the claims.
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| KR (1) | KR20000031410A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100329212B1 (en) * | 2000-08-11 | 2002-03-21 | 박복수 | auto-linking device and method between consumer and member store |
| US7045872B2 (en) | 2003-04-09 | 2006-05-16 | Sharp Kabushiki Kaisha | Semiconductor light receiving device and manufacturing method for the same |
-
1998
- 1998-11-06 KR KR1019980047452A patent/KR20000031410A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100329212B1 (en) * | 2000-08-11 | 2002-03-21 | 박복수 | auto-linking device and method between consumer and member store |
| US7045872B2 (en) | 2003-04-09 | 2006-05-16 | Sharp Kabushiki Kaisha | Semiconductor light receiving device and manufacturing method for the same |
| KR100607905B1 (en) * | 2003-04-09 | 2006-08-03 | 샤프 가부시키가이샤 | Manufacturing method for semiconductor light receiving device |
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