KR20000030079A - Structure of chuck to catch semiconductor weiper - Google Patents

Structure of chuck to catch semiconductor weiper Download PDF

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Publication number
KR20000030079A
KR20000030079A KR1019990045014A KR19990045014A KR20000030079A KR 20000030079 A KR20000030079 A KR 20000030079A KR 1019990045014 A KR1019990045014 A KR 1019990045014A KR 19990045014 A KR19990045014 A KR 19990045014A KR 20000030079 A KR20000030079 A KR 20000030079A
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KR
South Korea
Prior art keywords
chuck
semiconductor wafer
temperature
high temperature
gripping portion
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Application number
KR1019990045014A
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Korean (ko)
Inventor
김명규
Original Assignee
김명규
주시회사 코로
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Publication date
Application filed by 김명규, 주시회사 코로 filed Critical 김명규
Priority to KR1019990045014A priority Critical patent/KR20000030079A/en
Publication of KR20000030079A publication Critical patent/KR20000030079A/en
Priority to KR10-2000-0060932A priority patent/KR100367374B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE: A structure of a chuck is provided to previously prevent the damage of a product or the generation of a defective product caused by the sudden change of temperature generated when any one between the semiconductor wafer and a plane glass is held with the chuck of common temperature and to improve the reliability of the product and productivity by reducing the detect rate. CONSTITUTION: A high temperature state is always kept in a holding unit(104) even when a chamber waits outside by supplying power after embedding a heater unit(105) in the holding unit of the chuck(101). Thereby, the chuck keeps the high temperature state, not affected from the outside temperature even in a waiting state. In addition, when the holding unit of the waiting chuck is contacted to a lower face of the semiconductor wafer and plane plate glass arranged in a high temperature state inside the chamber, keeping a high temperature, the damage of a product caused by the sudden difference of temperature is prevented since the mutual difference of temperature between the semiconductor wafer and the plane plate glass is small.

Description

반도체 웨이퍼 파지용 척의 구조{STRUCTURE OF CHUCK TO CATCH SEMICONDUCTOR WEIPER}STRUCTURE OF CHUCK TO CATCH SEMICONDUCTOR WEIPER}

본 발명은 일측에 형성된 회동공이 회동축의 아암에 회동가능토록 삽입되며 아암의 일단에서 소정각도로 회동가능토록 결합되어 있는 반도체 웨이퍼 파지용 척의 구조에 관한 것으로, 특히 상기 척의 타단에 형성되어 반도체 웨이퍼와 액정평판유리(TFT-LCD 평판 그라스)중 어느 하나를 파지하도록 된 파지부와, 상기 파지부가 소정의 온도를 가지고 반도체 웨이퍼나 액정평판유리를 파지할 수 있도록 하기 위하여 파지부에 내장되는 히터부를 포함함으로써, 고열의 반도체 웨이퍼와 평판그라스중 어느 하나를 상온의 척으로 파지할 때 발생하는 급격한 온도변화에 의한 제품의 파손이나 불량제품의 발생를 미연에 방지하고, 궁극적으로는 고신뢰성의 제품을 생산함과 동시에 불량률의 감소를 이루어 생산성을 향상시킬 수 있도록 하는 반도체 웨이퍼 파지용 척의 구조에 관한 것이다.The present invention relates to a structure of a semiconductor wafer holding chuck in which a rotatable hole formed on one side is rotatably inserted into an arm of a pivot shaft and coupled so as to be rotatable at a predetermined angle at one end of the arm, and in particular, is formed at the other end of the chuck. And a gripping portion configured to hold any one of the TFT-LCD flat panel glass, and a heater portion embedded in the gripping portion to allow the gripping portion to hold the semiconductor wafer or the liquid crystal flat glass at a predetermined temperature. This prevents product breakage and defective products caused by rapid temperature changes occurring when holding either a high-temperature semiconductor wafer or plate glass with a chuck at room temperature, thereby producing a highly reliable product. At the same time, semiconductor wafer waves can be used to increase productivity by reducing defect rates. It relates to a structure for the chuck.

일반적으로 척(CHUCK)(1)은 가공된 반도체 웨이퍼를 챔버(도시하지 않음)내부에서 외부로 인출하여 카세트(도시하지 않음)로 로딩시키기 위한 것으로, 웨이퍼 로봇의 다절 링크 아암(2)에 결합되어 챔버로부터 반도체 웨이퍼와 평판그라스중 어느 하나를 흡착파지하여 외부로 인출하고 외부에 배치된 카세트에 로딩시키도록 된 것이다.In general, the chuck CHUCK 1 is for taking out the processed semiconductor wafer from the inside of a chamber (not shown) to the outside and loading it into a cassette (not shown), which is coupled to the multi-link arm 2 of the wafer robot. Thus, either one of the semiconductor wafer and the plated glass is sucked from the chamber and drawn out to the outside and loaded into a cassette disposed outside.

상기와 같은 종래 척의 기술을 도1에서 설명하면 다음과 같다.Description of the conventional chuck as described above is as follows.

먼저, 상기 척(1)을 다절 링크의 아암(2)에 소정각도로만 회동가능토록 결합시킨다.First, the chuck 1 is coupled to the arm 2 of the multiple link so as to be rotatable only at a predetermined angle.

따라서, 상기 다절 링크 아암(2)은 회전축(10)의 회전운동을 직선운동으로 변환시킴과 동시에 아암(2)의 끝단에 결합된 척(1)을 도1과 같이 소정거리로 직선운동시킨다.Accordingly, the multi-link arm 2 converts the rotational movement of the rotational shaft 10 into linear motion and linearly moves the chuck 1 coupled to the end of the arm 2 at a predetermined distance as shown in FIG.

상기와 같이 아암(2)에 의해 척(1)이 소정거리만큼 전진하게 되면 척(1)의 끝단에 형성된 파지부(3)는 챔버내부로 진입하여 반도체 웨이퍼나 평판그라스의 저부에 접촉된다.As described above, when the chuck 1 is advanced by the arm 2 by a predetermined distance, the gripping portion 3 formed at the end of the chuck 1 enters the chamber and contacts the bottom of the semiconductor wafer or plate glass.

이때, 상기 척(1)의 결합공(4)에 결합되는 흡입기(도시하지 않음)가 흡입공(5)으로 공기를 흡입하여 파지부(3)의 상면에 접촉된 반도체 웨이퍼나 평판그라스를 흡착함으로써, 상기 척(1)의 후진시 반도체 웨이퍼나 평판그라스가 파지부(3)로부터 탈리되는 것을 방지하도록 하는 바, 상기 흡입공(5)은 척(1)내부의 에어 유로(6)를 통하여 파지부(3)에 형성된 흡착공(7)과 연결되어 있어 흡입공(5)으로 공기를 흡입하게 되면 흡착부(8)의 공기가 흡착공(7)을 통하여 흡입공(5)측으로 흡출되므로 반도체 웨이퍼나 평판그라스의 저면과 접촉된 흡착부(8)가 진공상태로 되며, 이때, 상기 반도체 웨이퍼나 평판그라스가 흡착부(8)에 안정되게 흡착되는 것이다.At this time, an inhaler (not shown) coupled to the coupling hole 4 of the chuck 1 sucks air into the suction hole 5 and adsorbs the semiconductor wafer or plate glass that is in contact with the upper surface of the holding part 3. This prevents the semiconductor wafer or the platen glass from being detached from the gripping portion 3 when the chuck 1 is retracted. The suction hole 5 is formed through the air passage 6 inside the chuck 1. It is connected to the suction hole (7) formed in the gripper 3, when the air is sucked into the suction hole (5), the air of the suction unit (8) is sucked to the suction hole (5) side through the suction hole (7) The adsorption part 8 which contacts the bottom face of a semiconductor wafer or flat plate glass is made into a vacuum state, At this time, the said semiconductor wafer or flat plate glass is stably adsorb | sucked to the adsorption part 8.

따라서, 상기와 같이 파지부(3)에 반도체 웨이퍼나 평판그라스가 흡착되면 상기 회전축(10)의 반대회동에 의해 다절 링크가 원 위치로 도1과 같이 복귀되며, 이에 따라, 상기 척(1)은 전진한 거리 만큼 후진하게 되어 상기 반도체 웨이퍼나 평판그라스를 챔버내부에서 외부로 인출하게 된다.Therefore, when the semiconductor wafer or the plate glass is adsorbed to the holding part 3 as described above, the broken link is returned to its original position as shown in FIG. 1 by the reverse rotation of the rotating shaft 10, and thus, the chuck 1 Is retracted by an advanced distance, and the semiconductor wafer or plate glass is withdrawn from the inside of the chamber to the outside.

그리고, 상기와 같이 인출된 반도체 웨이퍼나 평판그라스를 카세트에 로딩시킴으로써 반도체 웨이퍼나 평판그라스가 다음 공정으로 이송될 수 있도록 한다.Then, the semiconductor wafer or plated glass is loaded into the cassette so that the semiconductor wafer or plated glass is transferred to the next process.

그러나, 상기한 바와 같은 종래의 인출작업시에는 챔버내의 온도를 고온인 상태로 유지하여 작업을 이루기 때문에 반도체 웨이퍼나 평판그라스는 고온의 상태로 챔버 내부에 배치되며, 상기 챔버의 외부에 상온인 상태로 배치되었던 척(1)이 챔버의 내부로 진입하여 고온의 반도체 웨이퍼나 평판그라스의 저면에 접촉되면 고온의 반도체 웨이퍼나 평판그라스와 파지부간의 급격한 온도차에 의한 순간적인 열교환이 이루어 지며, 상기한 바와 같은 온도차에 의해 반도체 웨이퍼나 평판그라스가 파손되어 제품의 생산성을 저하시키고, 아울러, 원가의 상승요인으로 작용되며 나아가서 제품의 경쟁력을 저하시키는 문제점등을 가지게 된다.However, in the conventional drawing operation as described above, the semiconductor wafer or the flat plate glass is disposed inside the chamber at a high temperature, and the temperature is at room temperature outside of the chamber because the operation is performed by maintaining the temperature in the chamber at a high temperature. When the chuck 1 disposed in the chamber enters the chamber and contacts the bottom surface of the high temperature semiconductor wafer or the plate glass, instantaneous heat exchange occurs due to a sudden temperature difference between the high temperature semiconductor wafer or the plate glass and the gripper. Due to such a temperature difference, the semiconductor wafer or the flat plate glass is damaged, which lowers the productivity of the product, and also acts as an increase factor of the cost, further reducing the competitiveness of the product.

상기와 같은 문제점을 해결하기 위하여 안출된 본 발명은 고온의 반도체 웨이퍼나 평판그라스의 저면에 척의 파지부가 접촉될 때 심각한 온도차가 발생하지 않도록 하여 제품의 파손발생을 방지하고 제품의 불량발생을 미연에 방지하여 생산성을 향상시키고 제품의 경쟁력을 제고시킬 수 있도록 하는 목적을 제공한다.In order to solve the above problems, the present invention prevents the occurrence of breakage of the product and prevents the failure of the product by preventing a serious temperature difference when the gripping portion of the chuck contacts the bottom of a high temperature semiconductor wafer or flat glass. To improve productivity and increase the competitiveness of the product.

상기와 같은 목적을 달성하기 위하여 본 발명은 상기 척의 타단에 형성되어 반도체 웨이퍼와 액정평판유리(TFT-LCD 평판 그라스)중 어느 하나를 파지하도록 된 파지부와,In order to achieve the above object, the present invention provides a gripping portion formed on the other end of the chuck to hold any one of a semiconductor wafer and a liquid crystal flat glass (TFT-LCD flat glass);

상기 파지부가 소정의 온도를 가지고 반도체 웨이퍼나 액정평판유리를 파지할 수 있도록 하기 위하여 파지부에 내장되는 히터부를 포함하면 된다.What is necessary is just to include the heater part integrated in a holding part so that the holding part may hold a semiconductor wafer or liquid crystal flat glass at a predetermined temperature.

그리고, 상기 척의 파지부에 복사열을 전가시키기 위한 복사열발생장치를 파지부의 상부 또는 하부 중 어느 한 곳에 배치하면 된다.The radiant heat generator for transferring radiant heat to the gripping portion of the chuck may be disposed at any one of the upper and lower portions of the gripping portion.

도1은 종래 척의 사용상태를 도시한 도면.1 is a view showing a state of use of a conventional chuck.

도2는 본 발명 척의 구조를 도시한 부분단면 평면도.Figure 2 is a partial cross-sectional plan view showing the structure of the present invention chuck.

도3은 본 발명 척의 사용상태를 도시한 도면.3 is a view showing a state of use of the chuck of the present invention.

도4은 본 발명의 다른 웨이퍼 로봇과 척을 도시한 도면.Figure 4 illustrates another wafer robot and chuck of the present invention.

-도면부호의 설명-Explanation of Drawings

101-척 102-회동공101-chuck 102- pupil

103-아암 104-파지부103-arm 104-grip

105-히터부 106-흡입공105-heater 106-suction hole

107-흡착부 108-회동축107-Adsorption 108-Spindle

110-다절링크110-multi-link

이하, 본 발명의 구성을 도2내지 도4에서 설명하면 다음과 같다.Hereinafter, the configuration of the present invention will be described in Figures 2 to 4 as follows.

일측에 형성된 회동공(102)이 회동축(108)의 아암(103)에 회동가능토록 삽입되며 아암(103)의 일단에서 소정각도로 회동가능토록 결합되어 있는 반도체 웨이퍼 파지용 척의 구조에 있어서, 상기 척(101)의 타단에 형성되어 반도체 웨이퍼와 액정평판유리(TFT-LCD 평판 그라스)중 어느 하나를 파지하도록 된 파지부(104)와, 상기 파지부(104)가 소정의 온도를 가지고 반도체 웨이퍼나 액정평판유리를 파지할 수 있도록 하기 위하여 파지부(104)에 내장되는 히터부(105)를 포함한다.In the structure of the semiconductor wafer holding chuck in which the rotating hole 102 formed on one side is inserted into the arm 103 of the rotating shaft 108 so as to be rotatable and coupled so as to be rotatable at a predetermined angle at one end of the arm 103. A holding part 104 formed at the other end of the chuck 101 so as to hold one of a semiconductor wafer and a liquid crystal flat glass (TFT-LCD flat glass), and the holding part 104 has a predetermined temperature. In order to hold the wafer or the liquid crystal flat glass, the heater unit 105 included in the holding unit 104 is included.

그리고, 상기 척(101)의 파지부(104)에 복사열을 전가시키기 위한 복사열발생장치를 파지부(104)의 상부 또는 하부 중 어느 한 곳에 배치한다.In addition, a radiant heat generator for transferring radiant heat to the gripping portion 104 of the chuck 101 is disposed at any one of the upper and lower portions of the gripping portion 104.

상기한 구성으로 이루어진 본 발명의 기술을 도2내지 도4에서 설명하면 다음과 같다.2 to 4, the technique of the present invention having the above-described configuration will be described.

상기 척(101)의 파지부(104)에는 도2에 도시한 바와 같이 히터부(105)를 내장한 후, 전원을 공급하여 줌으로써 챔버(도시하지 않음)밖에서 대기중일 때에도 파지부(104)가 항상 고온상태를 유지할 수 있도록 한다.As shown in FIG. 2, the gripper 104 of the chuck 101 has a heater 105 embedded therein, and then supplies power to the gripper 104 even when the gripper 104 is waiting outside the chamber (not shown). Make sure to keep the high temperature at all times.

따라서, 도3과 같이 다절링크(110)에 결합된 척(101)은 챔버(도시하지 않음)밖에서 대기상태에 있더라도 외부온도에 영향을 받지 않고 항상 고온상태를 유지할 수 있게 된다.Therefore, as shown in FIG. 3, the chuck 101 coupled to the multi-link 110 may be maintained at a high temperature at all times without being influenced by the external temperature even when the chuck 101 is in a standby state outside the chamber (not shown).

상기와 같이 대기중인 척(101)의 파지부(104)가 고온상태를 유지한 채 챔버내부에 고온상태로 배치된 반도체 웨이퍼(도시하지 않음)와 평판그라스(도시하지 않음)중 어느 하나의 저면에 접촉되면,상기 파지부(104)는 내장된 히터부(105)에 의해 고온의 상태이기 때문에 반도체 웨이퍼나 평판그라스와 상호 온도차가 미진하여 급격한 온도차에 의한 제품의 파손을 방지할 수 있게 된다.As described above, the bottom surface of any one of a semiconductor wafer (not shown) and flat plate glass (not shown) disposed in a high temperature state inside the chamber while the holding portion 104 of the waiting chuck 101 is maintained at a high temperature state. When the contact portion is in contact with the holding part 104 is a high temperature state by the built-in heater 105, the temperature difference between the semiconductor wafer and the flat plate glass is small, it is possible to prevent damage of the product due to a sudden temperature difference.

그리고, 파지부(104)에 파지된 반도체 웨이퍼나 평판그라스는 종래의 기술과 같이 흡입공(106)으로 공기를 흡입함으로써 흡착부(107)와 반도체 웨이퍼나 평판그라스의 접촉면사이를 진공상태로 만들어 반도체 웨이퍼나 평판그라스를 흡착하여 챔버밖으로 인출하면 된다.The semiconductor wafer or plate glass held by the holding unit 104 sucks air into the suction hole 106 as in the prior art, thereby making a vacuum state between the adsorption unit 107 and the contact surface of the semiconductor wafer or plate glass. The semiconductor wafer or plate glass may be adsorbed and taken out of the chamber.

또한, 본 발명의 실시예로서는 복사열을 발생시키는 복사열발생장치(도시하지 않음)을 파지부(104)의 상,하부중 어느 한 곳에 배치하여 복사열발생장치로부터 발생되는 복사열을 파지부(104)로 전가시킬 수 있도록 함으로써, 상기 파지부(104)가 항상 고온의 상태를 유지할 수 있도록 한다.In addition, according to the embodiment of the present invention, a radiant heat generating device (not shown) for generating radiant heat is disposed at either the upper or lower part of the holding part 104 to transfer radiant heat generated from the radiant heat generating device to the holding part 104. By doing so, the holding unit 104 can always maintain a high temperature state.

상기한 바와 같이 본 발명은 척의 파지부에 히터부를 내장하여 전원을 공급하여 항상 고온상태를 유지시켜 반도체 웨이퍼나 평판그라스의 작업공정을 수행하는 고온의 챔버내에서 상기 반도체 웨이퍼나 평판그라스를 인출할 때 파지부와 반도체 웨이퍼나 평판그라스와의 온도차를 미진하게 하여 온도차에 의해 발생하는 제품파손을 미연에 방지할 수 있도록 하여 제품의 신뢰성을 향상시키고 생산성을 증가시키는 매우 유용한 발명이다.As described above, according to the present invention, the semiconductor wafer or the flat glass can be taken out in a high temperature chamber in which a heater is built in the gripping part of the chuck to supply power to maintain the high temperature at all times to perform the work process of the semiconductor wafer or flat glass. When the temperature difference between the gripper and the semiconductor wafer or plate glass is insignificant, product damage caused by the temperature difference can be prevented in advance, thereby improving the reliability of the product and increasing productivity.

Claims (2)

일측에 형성된 회동공이 회동축의 아암에 회동가능토록 삽입되며 아암의 일단에서 소정각도로 회동가능토록 결합되어 있는 반도체 웨이퍼 파지용 척의 구조에 있어서,In the structure of the semiconductor wafer holding chuck in which the rotating hole formed on one side is inserted into the arm of the rotating shaft to be rotatable and coupled so as to be rotatable at a predetermined angle at one end of the arm. 상기 척의 타단에 형성되어 반도체 웨이퍼와 액정평판유리(TFT-LCD 평판 그라스)중 어느 하나를 파지하도록 된 파지부와,A gripping portion formed at the other end of the chuck to hold one of a semiconductor wafer and a liquid crystal flat glass (TFT-LCD flat glass); 상기 파지부가 소정의 온도를 가지고 반도체 웨이퍼나 액정평판유리를 파지할 수 있도록 하기 위하여 파지부에 내장되는 히터부를 포함하는 것을 특징으로 하는 반도체 웨이퍼 파지용 척의 구조.And a heater part embedded in the gripping portion to allow the gripping portion to hold the semiconductor wafer or the liquid crystal flat glass at a predetermined temperature. 상기 척의 파지부에 복사열을 전가시키기 위한 복사열발생장치를 파지부의 상부 또는 하부 중 어느 한 곳에 배치하는 것을 특징으로 하는 반도체 웨이퍼 파지용 척의 구조.And a radiation heat generating device for transferring radiant heat to the gripping portion of the chuck, either at the top or the bottom of the gripping portion.
KR1019990045014A 1999-10-18 1999-10-18 Structure of chuck to catch semiconductor weiper KR20000030079A (en)

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Citations (4)

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JPH0676924A (en) * 1992-07-28 1994-03-18 Ngk Insulators Ltd Semiconductor wafer heating device
JPH0722321A (en) * 1993-07-06 1995-01-24 Toshiba Corp Plasma cvd device
KR970019735U (en) * 1995-10-06 1997-05-26 엘지반도체주식회사 Chuck for sputtering deposition of semiconductor manufacturing equipment
JPH11176910A (en) * 1997-10-07 1999-07-02 Dainippon Screen Mfg Co Ltd Substrate carrier and substrate processor equipped with the same

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Publication number Priority date Publication date Assignee Title
KR940000304Y1 (en) * 1990-12-31 1994-01-19 대우전자부품주식회사 Baking system of semiconductor device fabricating process
JP2507478Y2 (en) * 1991-06-26 1996-08-14 株式会社エンヤシステム Wafer reversal sticking device
JPH08264616A (en) * 1995-03-27 1996-10-11 Tokyo Electron Ltd Vacuum treating apparatus and wafer transfer apparatus in vacuum treating chamber
KR0144876B1 (en) * 1995-07-28 1998-08-17 김광호 Uv irradiation apparatus
KR19990074935A (en) * 1998-03-16 1999-10-05 윤종용 Semiconductor device manufacturing apparatus having a heating device installed in the movement path of the wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0676924A (en) * 1992-07-28 1994-03-18 Ngk Insulators Ltd Semiconductor wafer heating device
JPH0722321A (en) * 1993-07-06 1995-01-24 Toshiba Corp Plasma cvd device
KR970019735U (en) * 1995-10-06 1997-05-26 엘지반도체주식회사 Chuck for sputtering deposition of semiconductor manufacturing equipment
JPH11176910A (en) * 1997-10-07 1999-07-02 Dainippon Screen Mfg Co Ltd Substrate carrier and substrate processor equipped with the same

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