KR20000020883A - Apparatus for preventing air inflow of semiconductor automatic etching equipment - Google Patents

Apparatus for preventing air inflow of semiconductor automatic etching equipment Download PDF

Info

Publication number
KR20000020883A
KR20000020883A KR1019980039674A KR19980039674A KR20000020883A KR 20000020883 A KR20000020883 A KR 20000020883A KR 1019980039674 A KR1019980039674 A KR 1019980039674A KR 19980039674 A KR19980039674 A KR 19980039674A KR 20000020883 A KR20000020883 A KR 20000020883A
Authority
KR
South Korea
Prior art keywords
valve
air
chamber
pump
vacuum
Prior art date
Application number
KR1019980039674A
Other languages
Korean (ko)
Inventor
이재철
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1019980039674A priority Critical patent/KR20000020883A/en
Publication of KR20000020883A publication Critical patent/KR20000020883A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for preventing an air inflow of a semiconductor automatic etching equipment is provided to replace and repair a valve by intercepting the inflow of the exterior air. CONSTITUTION: A first valve(26) is provided between a chamber(10) and a chamber side valve(19). A second valve(28) is provided between a pump(12) and a pump side valve(21). A vacuum line(16) is provided to the pump side valve. A gas supplying line(14) is provided to the chamber side valve. A gas assembly comprises a 3 way valve(24), an air valve(22), a flux controller(18), and an air valve(20). Thereby, an air is not flowed in the chamber in replacing and repairing the valve.

Description

반도체 자동식각 설비의 공기유입 방지장치Air inflow prevention device of semiconductor automatic etching facility

본 발명은 반도체 자동식각 설비의 공기유입 방지장치에 관한 것으로서, 보다 상세하게는 가스어셈블리로부터 공급되는 라인에 설치된 밸브를 수리하는 동안 공정챔버 또는 진공펌프로의 공기의 유입을 차단하도록 각각의 전단에 단속밸브를 더 설치하는 반도체 자동식각 설비의 공기유입 방지장치에 관한 것이다.The present invention relates to a device for preventing air inflow of a semiconductor automatic etching apparatus, and more particularly, to a front end of each device to block the inflow of air into a process chamber or a vacuum pump while repairing a valve installed in a line supplied from a gas assembly. The present invention relates to an air inflow prevention device for a semiconductor automatic etching installation further comprising an intermittent valve.

반도체 장치 제조라인에 설치된 자동식각 설비 등과 같은 공정챔버에는 진공이 형성된 후 공정이 수행되고, 공정이 종료되면 소정 레벨의 진공도가 유지된 상태에서 웨이퍼 등과 같은 피공정물이 이송된다. 이러한 진공상태는 청정도가 요구되는 반도체 장치 제조공정에서는 특히 중요한 요소이며, 진공상태가 해소되어 대기압 상태로 자주 전환되면 공정챔버가 오염되고, 또 다시 진공상태로 되기 위해서는 진공펌프가 무리하게 작동되어야 한다. 또한 수리를 위해 진공이 형성된 소정 부위를 점검해야 하는 경우에도 최대한 진공상태를 해제시키지 않도록 하는 것이 요구된다.The process is performed after a vacuum is formed in a process chamber such as an automatic etching facility installed in a semiconductor device manufacturing line, and when a process is completed, a workpiece such as a wafer is transferred while a predetermined level of vacuum is maintained. This vacuum is particularly important in the semiconductor device manufacturing process, which requires cleanliness. When the vacuum is resolved and frequently converted to atmospheric pressure, the process chamber is contaminated and the vacuum pump must be operated excessively in order to become vacuum again. . In addition, it is required not to release the vacuum as much as possible even if it is necessary to check a predetermined part where the vacuum is formed for repair.

공정가스가 공급되어 공정이 이루어지는 공정챔버의 예가 도1에 도시되어 있다. 도1은 종래의 반도체 장치 제조설비의 자동식각 설비의 예를 나타내는 것으로서, 공정챔버(10)와 진공펌프(12)가 각각 가스공급라인(14)과 진공라인(16)에 연결되어 있고, 이들 각각의 라인(14, 16) 상에 챔버측밸브(19)와 펌프측밸브(21)가 각각 설치되어 있다.An example of a process chamber in which a process gas is supplied to perform a process is shown in FIG. 1 shows an example of an automatic etching facility of a conventional semiconductor device manufacturing facility, wherein a process chamber 10 and a vacuum pump 12 are connected to a gas supply line 14 and a vacuum line 16, respectively. Chamber-side valves 19 and pump-side valves 21 are provided on the lines 14 and 16, respectively.

이들 밸브(19, 21)가 연결되는 라인에는 다양한 가스가 공급되는 라인이 각각 구비되어 있고, 도시하지 않은 가스공급부로부터 순차적으로 3웨이밸브(24), 에어밸브(22), 유량제어기(18) 및 에어밸브(20)가 설치되어 있다.Lines to which these valves 19 and 21 are connected are provided with lines for supplying various gases, respectively, and three-way valves 24, air valves 22, and flow controllers 18 are sequentially provided from a gas supply unit (not shown). And an air valve 20.

전술한 바와 같이 구성된 종래의 자동식각 설비는 도시하지 않은 소정 제어부의 제어동작에 의해 진공펌프(12)가 작동되어 공정챔버(10)에 진공이 형성되고, 챔버측밸브(19)가 닫히면서 가스공급부로부터 공정가스가 공정챔버(10)로 공급되어 공정이 수행된다. 그리고, 공정이 종료되면, 가스공급이 중단되고, 에어밸브(20) 및 챔버측밸브(19)가 닫히면서 펌프측밸브(21)가 열리며, 진공펌프(12)가 작동하여 잔류하는 가스가 배출된다.In the conventional automatic etching facility configured as described above, the vacuum pump 12 is operated by a control operation of a predetermined controller (not shown) to form a vacuum in the process chamber 10, and the chamber side valve 19 is closed. Process gas is supplied from the supply unit to the process chamber 10 to perform the process. When the process is completed, the gas supply is stopped, the air valve 20 and the chamber side valve 19 are closed, the pump side valve 21 is opened, and the vacuum pump 12 operates to maintain the gas. Discharged.

이러한 공정의 흐름이 지속적으로 진행되면서 에어밸브(20) 및 챔버측밸브(19)의 개폐가 정확히 이루어지지 않는 사고가 발생되었다. 이는 에어밸브(20)의 개폐가 내부에 형성되어 있는 팁(tip)의 왕복운동으로 이루어지는데, 반복적인 왕복운동으로 팁이 마모되어서 발생되는 것이다. 이에 의해 팁의 상태에 따라 교체해야 하는데, 팁을 교체하기 위해서는 설비를 정지시킨 상태에서 해당 밸브를 해체했다.As the flow of this process continues, an accident occurred in which opening and closing of the air valve 20 and the chamber side valve 19 were not made correctly. The opening and closing of the air valve 20 is made of a reciprocating motion of the tip (tip) formed therein, it is caused by the wear of the tip by repeated reciprocating motion. As a result, the tip must be replaced according to the state of the tip. In order to replace the tip, the valve was dismantled while the equipment was stopped.

그런데, 유량제어기(18)의 전단에 설치되어 있는 에어밸브(22)의 교체는 수월하게 이루어지는데 반해, 후단에 설치되어 있는 에어밸브(20) 및 챔버측밸브(19)의 팁 교체시 공정챔버(10)와 진공라인(16)에 외부공기가 유입되어 파티클에 의해 오염되거나, 공정챔버(10) 내부의 진공상태가 불안정해짐으로써 진공펌프(12)에 손상이 가해졌다.By the way, it is easy to replace the air valve 22 provided at the front end of the flow controller 18, while the process chamber at the time of tip replacement of the air valve 20 and the chamber side valve 19 provided at the rear end External air flows into the 10 and the vacuum line 16 and is contaminated by particles, or the vacuum pump 12 is damaged due to an unstable vacuum inside the process chamber 10.

따라서, 종래에는 전술한 바와 같이 개폐동작이 원활하게 이루어지지 않은 밸브의 팁을 교체할 때 외부공기의 유입으로 인하여 진공라인(16) 또는 공정챔버(10)의 진공분위기가 불안정해지고, 진공펌프(12)의 동작에 무리가 가해져서 손상되는 등의 문제점이 있었다.Therefore, in the related art, when the tip of the valve, which is not smoothly opened or closed, is replaced as described above, the vacuum atmosphere of the vacuum line 16 or the process chamber 10 becomes unstable due to the inflow of external air, and the vacuum pump ( There was a problem such as damage to the operation of 12).

본 발명의 목적은, 진공이 형성되어 있는 분위기를 안정적으로 유지시키면서 공정챔버로의 외부공기의 유입을 차단하면서 밸브의 수리 및 교체가 이루어지도록 하는 반도체 자동식각 설비의 공기유입 방지장치를 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide a device for preventing air inflow of a semiconductor automatic etching facility, which allows the valve to be repaired and replaced while blocking the inflow of external air into the process chamber while maintaining a stable atmosphere in which a vacuum is formed. have.

도1은 종래의 반도체 자동식각 설비의 가스공급라인을 나타내는 도면이다.1 is a view showing a gas supply line of a conventional semiconductor automatic etching facility.

도2는 본 발명에 따른 반도체 자동식각 설비의 공기유입 방지장치의 실시예를 나타내는 도면이다.2 is a view showing an embodiment of the air inflow prevention apparatus of the semiconductor automatic etching facility according to the present invention.

※ 도면의 주요 부분에 대한 부호의 설명※ Explanation of codes for main parts of drawing

10 : 공정챔버 12 : 진공펌프10: process chamber 12: vacuum pump

14 : 가스공급라인 16 : 진공라인14 gas supply line 16 vacuum line

18 : 유량제어기 19 : 챔버측밸브18: flow controller 19: chamber side valve

20, 22 : 에어밸브 21 : 펌프측밸브20, 22: air valve 21: pump side valve

24 : 3웨이밸브 26, 28 : 단속밸브24: 3-way valve 26, 28: intermittent valve

상기 목적을 달성하기 위한 본 발명에 따른 반도체 자동식각 설비의 공기유입 방지장치는, 라인을 통해 후단에 개폐용 에어밸브를 구비하는 가스어셈블리로 공정가스가 공급되고, 상기 가스어셈블리로부터 단일 가스공급라인을 통해 챔버측밸브가 설치된 공정챔버로 공정가스가 공급되며, 상기 가스공급라인에 분기된 진공라인에 펌프측밸브가 설치된 진공펌프가 구비되어 이루어지는 반도체 자동식각설비에 있어서, 상기 공정챔버와 상기 챔버측밸브사이에 설치된 제1밸브 및 상기 진공펌프와 상기 펌프측밸브 사이에 설치된 제2밸브가 구비되어 상기 에어밸브의 수리시 공기가 상기 공정챔버 및 상기 진공펌프로 유입되지 않도록 이루어지며, 상기 제1밸브 및 제2밸브는 자동 또는 수동에 의해 작동되는 밸브가 사용될 수 있다.In order to achieve the above object, the apparatus for preventing air inflow of a semiconductor automatic etching apparatus according to the present invention includes a process gas supplied to a gas assembly having an air valve for opening and closing at a rear end through a line, and a single gas supply line from the gas assembly. A process gas is supplied to a process chamber in which a chamber side valve is installed through the process chamber, and a vacuum pump having a pump side valve is installed in a vacuum line branched to the gas supply line. A first valve provided between the side valve and the second valve provided between the vacuum pump and the pump side valve is provided so that air does not flow into the process chamber and the vacuum pump when the air valve is repaired. Valve 1 and valve 2 are automatic or manual Solvent operated valves may be used.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2는 본 발명에 따른 자동식각 설비의 공기유입 방지장치를 나타내는 도면으로, 도1에서 설명한 동일 또는 동일부재에 있어서는 동일부호를 붙여 상세한 설명은 생략한다.FIG. 2 is a view showing an air inflow prevention apparatus of an automatic etching apparatus according to the present invention. In the same or the same members described with reference to FIG.

도2를 참조하면, 가스공급라인(14)의 공정챔버(10)와 챔버측밸브(19) 사이에 단속밸브(26)가 설치되어 있고, 진공라인(16)의 진공펌프(12)와 펌프측밸브(21) 사이에 단속밸브(28)가 설치되어 있다.Referring to FIG. 2, an intermittent valve 26 is installed between the process chamber 10 and the chamber side valve 19 of the gas supply line 14, and the vacuum pump 12 and the pump of the vacuum line 16 are provided. An intermittent valve 28 is provided between the side valves 21.

공정이 진행될 때에는 도시하지 않은 가스공급부로부터 공정가스가 3웨이밸브(24) 및 에어밸브(22)를 통하고, 가스에 따라 공급되는 양이 다르게 설정되어 있어서 조절되도록 하는 유량제어기(18)를 통하게 된다. 여기서 3웨이밸브(24)에는 질소가스를 공급하여 퍼지(purge)시키기 위한 별도의 라인(도시하지 않음)이 설치되어 있다. 그리고, 유량제어기(18)의 후단에 설치되어 있는 에어밸브(20)를 통해 챔버측밸브(19) 및 단속밸브(26)를 통해 공정챔버(10)로 공정가스가 공급된다.When the process is in progress, the process gas from the gas supply unit (not shown) passes through the three-way valve 24 and the air valve 22, and through the flow controller 18 to adjust the amount supplied according to the gas is set differently do. Here, the three-way valve 24 is provided with a separate line (not shown) for supplying and purging nitrogen gas. Then, the process gas is supplied to the process chamber 10 through the chamber side valve 19 and the intermittent valve 26 through the air valve 20 provided at the rear end of the flow controller 18.

그리고, 공정이 종료되면 단속밸브(28)와 펌프측밸브(21)를 제외한 모든 밸브들이 닫히면서 진공펌프(12)가 작동되어 라인에 잔류하는 가스가 배출된다. 본 발명의 가스어셈블리는 전술한 3웨이밸브(24), 에어밸브(22), 유량제어기(18) 및 에어밸브(20)들이 집합되어 있는 구조를 일컫는다.When the process is completed, all the valves except the intermittent valve 28 and the pump side valve 21 are closed, and the vacuum pump 12 is operated to discharge the gas remaining in the line. The gas assembly of the present invention refers to a structure in which the above-described three-way valve 24, air valve 22, flow controller 18, and air valve 20 are assembled.

공정진행중 또는 유지보수를 위한 작업중에 에어밸브(20), 챔버측밸브(19) 및 펌프측밸브(21)의 이상이 발생되면, 이를 수리하거나 교체해야 한다. 이때 해당 밸브를 분해하여 교체 또는 수리가 이루어지는데, 대개의 수리는 밸브(19, 20, 21)에 형성되어 있는 팁(도시하지 않음)을 교체하는 것이 보통이다.If an abnormality occurs in the air valve 20, the chamber side valve 19, and the pump side valve 21 during the process or during the maintenance work, it should be repaired or replaced. At this time, the valve is disassembled and replaced or repaired. In most repairs, a tip (not shown) formed in the valves 19, 20, and 21 is replaced.

교체 또는 수리를 위해서는 각각의 단속밸브들(26, 28)을 밀폐시킨 다음, 해당 밸브(19, 20, 21)를 분해하여 작업이 이루어짐으로써 진공펌프(12)와 공정챔버(10)로 외부의 공기가 유입되는 것이 방지된다.For the purpose of replacement or repair, the intermittent valves 26 and 28 are sealed, and then the valves 19, 20 and 21 are disassembled and the work is performed to the outside of the vacuum pump 12 and the process chamber 10. Ingress of air is prevented.

챔버측밸브(19)와 펌프측밸브(21)는 각각에 서로 다른 라인을 통해 개폐신호가 공급되고, 서로의 개폐상태가 다르다. 즉, 공정이 진행되는 동안에는 챔버측밸브(19)가 개방되고, 펌프측밸브(21)는 밀폐된다. 그리고, 공정이 종료되면 펌프측밸브(21)가 개방되고, 챔버측밸브(19)는 밀폐된다.The chamber side valve 19 and the pump side valve 21 are each supplied with an open / close signal through different lines, and the open / close states are different from each other. That is, the chamber side valve 19 is opened and the pump side valve 21 is closed while the process is in progress. When the process is completed, the pump side valve 21 is opened and the chamber side valve 19 is closed.

이들 단속밸브들(26, 28)은 편의상 또는 설비가 설치되어 있는 상태에 따라 자동개폐되는 자동밸브를 사용할 수 있고, 수동에 의해 개폐될 수 있는 밸브로 구성될 수 있다.These intermittent valves 26 and 28 may use automatic valves that are automatically opened and closed according to the convenience or the installed state of the equipment, and may be configured as valves that can be opened and closed manually.

전술한 바와 같이 본 발명에 따른 실시예에 의하면, 진공펌프(12) 및 공정챔버(10)로의 외부공기의 유입이 발생되지 않도록 단속밸브(26, 28)를 설치하여 에어밸브(20)의 수리 및 교체가 이루어져서 외부공기로 인한 오염이 방지되는 이점이 있다.As described above, according to the embodiment of the present invention, the air valve 20 is repaired by installing the control valves 26 and 28 to prevent the inflow of external air into the vacuum pump 12 and the process chamber 10. And the replacement is made has the advantage of preventing contamination by external air.

따라서, 본 발명에 의하면 수리가 요구되는 밸브를 교체하는 작업수행이 원활히 이루어지고, 외부공기로부터 공정챔버 및 진공라인의 오염이 방지되는 효과가 있다.Therefore, according to the present invention, the work performed to replace the valve requiring repair is smoothly performed, and contamination of the process chamber and the vacuum line from the outside air is prevented.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (1)

라인을 통해 후단에 개폐용 에어밸브를 구비하는 가스어셈블리로 공정가스가 공급되고, 상기 가스어셈블리로부터 단일 가스공급라인을 통해 챔버측밸브가 설치된 공정챔버로 공정가스가 공급되며, 상기 가스공급라인에 분기된 진공라인에 펌프측밸브가 설치된 진공펌프가 구비되어 이루어지는 반도체 자동식각설비에 있어서,The process gas is supplied to a gas assembly having an air valve for opening and closing at a rear end through a line, and the process gas is supplied from the gas assembly to a process chamber in which a chamber side valve is installed through a single gas supply line. In a semiconductor automatic etching equipment comprising a vacuum pump provided with a pump side valve in a branched vacuum line, 상기 공정챔버와 상기 챔버측밸브사이에 설치된 제1밸브; 및A first valve disposed between the process chamber and the chamber side valve; And 상기 진공펌프와 상기 펌프측밸브 사이에 설치된 제2밸브;A second valve disposed between the vacuum pump and the pump side valve; 가 구비되어 상기 에어밸브의 수리시 공기가 상기 공정챔버 및 상기 진공펌프로 유입되지 않도록 이루어짐을 특징으로 하는 반도체 자동식각 설비의 공기유입 방지장치.Is provided with a device for preventing the air inlet of the semiconductor automatic etching equipment, characterized in that the air is not made to flow into the process chamber and the vacuum pump when repairing the air valve.
KR1019980039674A 1998-09-24 1998-09-24 Apparatus for preventing air inflow of semiconductor automatic etching equipment KR20000020883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019980039674A KR20000020883A (en) 1998-09-24 1998-09-24 Apparatus for preventing air inflow of semiconductor automatic etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019980039674A KR20000020883A (en) 1998-09-24 1998-09-24 Apparatus for preventing air inflow of semiconductor automatic etching equipment

Publications (1)

Publication Number Publication Date
KR20000020883A true KR20000020883A (en) 2000-04-15

Family

ID=19551791

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980039674A KR20000020883A (en) 1998-09-24 1998-09-24 Apparatus for preventing air inflow of semiconductor automatic etching equipment

Country Status (1)

Country Link
KR (1) KR20000020883A (en)

Similar Documents

Publication Publication Date Title
JP6047672B1 (en) Vacuum processing equipment
KR101451189B1 (en) Solenoid bypass system for continuous operation of pneumatic valve
KR20000020883A (en) Apparatus for preventing air inflow of semiconductor automatic etching equipment
KR100446455B1 (en) Vacuum gate valve
KR200195123Y1 (en) Gate valve for process chamber of semiconductor
KR20070033114A (en) Semiconductor fabricating apparatus and method thereof
KR100431332B1 (en) Apparatus for supplying cooling gas of semiconductor equipment
KR102298895B1 (en) Gas exhausting equipment operating method for cleaning exhaust pipe of semiconductor production facility
KR19990025801A (en) Gas supply device for semiconductor device manufacturing
KR20010019003A (en) Backward preventing apparatus for semiconductor etching equipment
KR0165718B1 (en) Reducing apparatus and method of damper actuating pressure
KR20060120324A (en) Multi chamber device for semiconductor fabrication apparatus
KR100227830B1 (en) Vacuum system for semiconductor process chamber and gas-supplying method
KR20070107516A (en) Vacuum line for semiconductor manufacturing device and method for maintenance of vacuum exhaust unit
KR200180891Y1 (en) Gas suppling machine
KR19990030011U (en) Wafer back cooling gas supply and exhaust system
KR20000010864U (en) Vacuum system with rapid exhaust valve
KR0132423Y1 (en) Chemical supplier for semiconductor process
KR0136232Y1 (en) Apparatus for fabricating a semiconductor device
KR19990031612A (en) Exhaust system and method for operating exhaust system of semiconductor device manufacturing facilities
KR200202052Y1 (en) Exhausting apparatus of wafer chamber
KR20060135457A (en) Gas processing system
KR20040079060A (en) exhaust gas system of semiconductor device manufacturing equipment
KR20000000953A (en) Chemical fluid supplying apparatus for a manufacturing a semiconductor device
KR20020080925A (en) process gas supplying system for semiconductor device manufacturing equipment

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination