KR19990025801A - Gas supply device for semiconductor device manufacturing - Google Patents

Abstract

The present invention relates to a gas supply device for manufacturing a semiconductor device used in a process such as etching and deposition in the semiconductor device manufacturing process.

The present invention is a process gas supply line piped from the process gas source to the process chamber; A non-process gas supply line for supplying non-process gases and connected to the process gas supply line by a first manual valve; And a vent line branched from a rear end of the process gas supply line and connected to a second manual valve immediately before an exhaust port.

Therefore, by attaching a manual valve to prevent the flow of gas by the internal leak of the automatic valve to prevent the leakage of the leak check gas or purge gas to prevent mixing with the process gas to prevent process defects in the semiconductor device manufacturing process, unreacted process It is effective in preventing fire from explosion due to direct exhaust of gas.

Description

Gas supply device for semiconductor device manufacturing

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas supply device for semiconductor device manufacturing, and more particularly, to a gas supply device for semiconductor device manufacturing with a manual valve for blocking an internal leak of an automatic valve.

In general, a semiconductor device manufacturing process is manufactured by repeatedly performing a number of processes such as photo, etching, deposition, ion implantation process. Most of these processes are performed in an enclosed process chamber and are performed by supplying process gas into the process chamber according to the process.

1 is a schematic configuration diagram showing a gas supply apparatus for manufacturing a semiconductor device by a conventional method.

As shown in Figure 1, the gas supply device is configured as follows. A non-process gas supply line 80 and a process gas supply line connected to the process gas supply line and supplying a process gas supply line 82 and non-process gases that are connected to the process chamber from the process gas supply source 44. It consists of a vent line or the like branched at the rear end of the tube and connected to the exhaust port. The process gas supply line 82 is equipped with a pressure gauge 46 for indicating the pressure in the line and a regulator 54 for adjusting the pressure.

In the above gas supply apparatus, the automatic valve 38 blocks the purge gas or the leak check gas and passes only the process gas during the process. Therefore, the process gas is supplied to the process chamber 58 through the regulator 54 and performs an etching and deposition process.

When the process is completed in this way, the automatic valve 43 cuts off the process gas to stop the process gas supply, the automatic valve 38 is opened and the purge gas passes. As a result, the purge gas cleans the process gas supply line 82 and the process chamber 58. When the wafer is replaced, the purge gas is shut off again by the automatic valve 38 and the process gas is supplied to repeat the process. Do this. In addition, a leak check gas is flowed in order to confirm the gas leak in the apparatus, and the gas leak state in the apparatus is also checked.

However, the pneumatically operated automatic valve used in such a gas supply device is less reliable in the ON / OFF operability than the manual valve. This is because a seat that prevents the flow of gas inside due to a number of toxic and corrosive gases used in the semiconductor device manufacturing process and abrasion due to frequent operation (opening / closing) completely fills the hole of the valve. Because you can not block. However, as a gas supply device for semiconductors has been developed as a more convenient automatic device, a case of installing an automatic valve is more common than a conventional manual valve. The gas supply device is a leak check gas when the process proceeds due to the internal leak of the automatic valve 38 due to the above problems even after the leak check gas and the purge gas closed the automatic valve 38 after the leak check or purge of the equipment Alternatively, the purge gas flows into the process gas supply line, causing process defects due to mixing with the process gas, or supplied to the process chamber by the internal leak of the automatic valves 50 and 60 of the vent lines 84 and 86 during process progress. As unreacted process gas is discharged directly to the exhaust port, there is a problem that a fire may occur due to the explosion.

SUMMARY OF THE INVENTION An object of the present invention is to provide a gas supply device for manufacturing a semiconductor device for preventing a risk of a fire due to a process defect and an explosion caused by a leak of an automatic valve.

The specific object of the present invention is to prevent leak check gas or purge gas from entering the process chamber by mixing the process gas with the leak of an automatic valve that blocks the leak check gas or purge gas remaining in the line after the leak check or purge. Secondly, the unreacted process gas is discharged directly to the exhaust port due to the leak of the automatic valve of the vent line during the process to prevent the fire caused by the explosion.

1 is a schematic configuration diagram showing a gas supply apparatus for manufacturing a semiconductor device by a conventional method.

2 is a schematic diagram illustrating a gas supply apparatus for manufacturing a semiconductor device according to the present invention.

※ Explanation of symbols for main parts of drawing

30; Purge gas source 32; Leak Check Gas Supply Source

34, 36, 38, 43, 48, 50, 56, 60,; Automatic valve

46; Pressure gauges 40, 52, 62; Check valve

42; First manual valve 44; Process gas source

54; Regulator 58; Process chamber

66; Exhaust port 64; 2nd manual valve

80; Unprocess gas supply line 82; Process gas supply line

84; First vent line 86; 2nd vent line

Gas supply device for semiconductor device manufacturing used in the etching and deposition process according to the present invention for achieving the above object is a process gas supply line which is connected to the process chamber from the process gas source, supply the non-process gas, the process gas supply And a non-process gas supply line connected to the first manual valve in the line, and a vent line branched from the rear end of the process gas supply line and immediately connected to the second manual valve just before the exhaust port.

Preferably, the non-process gas uses helium as the leak check gas and nitrogen as the purge gas. The first manual valve and the second manual valve are preferably three-way valves. Preferably, a check valve is attached to the front end of the manual valve. The vent line is preferably composed of a first vent line and a second vent line and connected to a second vent line.

Hereinafter, with reference to the accompanying drawings a specific embodiment of the present invention will be described in detail.

2 is a schematic diagram illustrating a gas supply apparatus for manufacturing a semiconductor device according to the present invention.

As shown in FIG. 2, the process gas from the process gas source 44 has a gas shutoff force along the process gas supply line in the state in which the automatic valve 38 is blocked to block the purge gas or the leak check gas. The process gas from the process gas source 44 passes through the strong first manual valve 42 and passes through the automatic valve 48 with the automatic valves 50 and 60 of the first and second vent lines closed. It passes through a regulator 54 that adjusts the pressure to fit the process chamber 58. The process gas that has passed through the regulator 54 passes through the automatic valve 56 and is supplied to the process chamber 58. At this time, the purge gas or the leak check gas remaining in the non-process gas supply line 80 after the purge or the leak check performed before the process is completely shut off by the first manual valve 42 and according to the internal leak of the automatic valve 38. Prevents process defects caused by the mixing of purge gas or leak check gas. When the process is completed in this way, the automatic valve 43 cuts off the process gas supply source 44 to stop the supply of the process gas, and the automatic valve of the first vent line 84 and the second vent line 86 is stopped. (50, 60) is opened and vented, the automatic valve 38 is opened, and the first manual valve 42 allows only the purge gas of the purge gas source 30 or the leak check gas of the leak check gas source 32 to pass therethrough. The process gas supply line 82 and the process chamber 58 are cleaned, and when the wafer is replaced, the purge gas or the leak check gas is shut off by the automatic valve 38 and the first manual valve 42 is Repeat the process so that only the process gas is supplied. The check valves 40, 52, and 62 of the gas supply device only serve to prevent the reverse flow of the preceding gas, but not to block the leak.

In the process, nitrogen gas is usually used as the purge gas. This is because it is safe to purge a chamber or an exhaust port by using a stable and harmless gas. Helium gas is generally used as the leak check gas, because helium gas having a smaller particle size than other gases is used, so if there is no leak of helium, there is no leak of a gas having a larger particle diameter.

In addition, the first vent line 84 and the second vent line 86 are connected to the second manual valve 64 immediately before the exhaust port 66, so that the internal exhaust of the automatic valves 50 and 60 during the process proceeds. (66) to prevent the risk of fire resulting from the explosion of unreacted process gases.

Therefore, according to the present invention, as described above, a manual valve is installed after the automatic valve to prevent gas flow due to internal leakage of the automatic valve, thereby preventing the leakage of the leak check gas or the purge gas, thereby preventing the mixing of the process gas and the semiconductor device. It is effective in preventing process defects in the manufacturing process and in preventing the explosion risk by fire due to the direct release of unreacted process gas.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (6)

In the gas supply device for manufacturing a semiconductor device used in the process of etching, deposition, etc., A process gas supply line connected to the process chamber from a process gas source; A non-process gas supply line for supplying non-process gases and connected to the process gas supply line by a first manual valve; And A vent line branched from a rear end of the process gas supply line and connected to a second manual valve immediately before an exhaust port; Gas supply device for semiconductor device manufacturing, characterized in that it comprises a. The method of claim 1, The non-process gas is a gas supply device for manufacturing a semiconductor device, characterized in that helium as the leak check gas, using nitrogen as the purge gas. The method of claim 1, Gas supply apparatus for manufacturing a semiconductor device, characterized in that using the three-way valve as the first manual valve. The method of claim 1, Gas supply device for semiconductor device manufacturing, characterized in that the check valve is attached to the front end of the first manual valve. The method of claim 1, The vent line comprises a first vent line and a second vent line, and is connected to a second manual valve. The method of claim 4, wherein Gas supply device for manufacturing a semiconductor device, characterized in that the second manual valve is a three-way valve.