KR20000019810A - Ion-injection apparatus for manufacturing semiconductor device - Google Patents

Ion-injection apparatus for manufacturing semiconductor device Download PDF

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Publication number
KR20000019810A
KR20000019810A KR1019980038083A KR19980038083A KR20000019810A KR 20000019810 A KR20000019810 A KR 20000019810A KR 1019980038083 A KR1019980038083 A KR 1019980038083A KR 19980038083 A KR19980038083 A KR 19980038083A KR 20000019810 A KR20000019810 A KR 20000019810A
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KR
South Korea
Prior art keywords
orient
wafer
semiconductor device
ion implantation
ring
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KR1019980038083A
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Korean (ko)
Inventor
김동낙
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윤종용
삼성전자 주식회사
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Priority to KR1019980038083A priority Critical patent/KR20000019810A/en
Publication of KR20000019810A publication Critical patent/KR20000019810A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: An ion-injection apparatus is provided to increase productivity of a semiconductor device by improving an o-ring of an orient and prevent a wafer from moving or being dropped by loading/unloading the wafer after the wafer is adhered closely. The ion-injection apparatus can minimize particles caused by the abrasion of the o-ring. CONSTITUTION: An ion-injection apparatus comprises an orient(20) capable of loading/unloading a wafer during an ion-injection process, the orient(20) further comprising an o-ring(22) of teflon material having a predetermined area along the circumference of the orient(20).

Description

반도체소자 제조용 이온주입장치Ion implantation device for semiconductor device manufacturing

본 발명은 반도체소자 제조용 이온주입장치에 관한 것으로서, 보다 상세하게는 이온주입의 수행시 웨이퍼(Wafer)를 로딩/언로딩(Loading/Unloading)시킬 수 있는 오리엔트(Orient)를 개선시킨 반도체소자 제조용 이온주입장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus for manufacturing a semiconductor device, and more particularly to an ion for fabricating a semiconductor device having an improved orient that can load / unload a wafer during ion implantation. It relates to an injection device.

일반적으로 반도체소자는 상기 반도체소자로 제조할 수 있는 웨이퍼를 대상으로 하는 다양한 단위공정 등을 수행함으로써 제조된다.In general, a semiconductor device is manufactured by performing various unit processes and the like for a wafer that can be manufactured with the semiconductor device.

이러한 단위공정 중에서 상기 웨이퍼(Wafer)의 전기적 특성을 변화시키는 단위공정은 상기 웨이퍼 내에 불순물을 주입시키는 이온주입공정으로 이루어진다.Among these unit processes, the unit process for changing the electrical characteristics of the wafer consists of an ion implantation process for injecting impurities into the wafer.

여기서 상기 이온주입공정을 수행할 수 있는 이온주입장치는 공정조건 등에 따라 중전류이온주입장치, 고전류이온주입장치 및 고에너지이온주입장치 등으로 구분할 수 있다.Here, the ion implantation apparatus capable of performing the ion implantation process may be classified into a medium current ion implantation apparatus, a high current ion implantation apparatus, and a high energy ion implantation apparatus according to process conditions.

이러한 이온주입장치 중에서 상기 고에너지이온주입장치에는 도1에 도시된 바와 같이 웨이퍼(W)를 로딩/언로딩시킬 수 있는 오리엔트(10)가 구비된다.Among these ion implantation devices, the high energy ion implantation device includes an orient 10 capable of loading / unloading the wafer W as shown in FIG. 1.

여기서 상기 오리엔트(10)에는 그 원주부를 따라서 오-링(O-ring)(12)을 구비시켜 상기 웨이퍼(W)의 로딩/언로딩시 면접되도록 한다.The orient 10 is provided with an O-ring 12 along its circumference to be interviewed during loading / unloading of the wafer W.

즉, 상기 오리엔트(10)의 오-링(12)에 면접시켜 상기 웨이퍼(W)를 로딩/언로딩시키는 것이다.That is, the wafer W is loaded / unloaded by interviewing the o-ring 12 of the orient 10.

그러나 종래의 오리엔트(10)에 구비되는 오-링(12)은 웨이퍼(W)와 면접하는 면적이 협소하여 약간의 충격에도 상기 웨이퍼(W)가 쉽게 흔들리거나 또는 드롭(Drop)되는 상황이 빈번하게 발생하였다.However, the O-ring 12 provided in the conventional orient 10 has a small area interviewed with the wafer W, so that the wafer W is easily shaken or dropped even with a slight impact. Occurred.

그리고 상기 오-링(12)이 고무재질로 이루어져 있었기 때문에 지속적으로 사용할 경우 상기 고무재질의 오-링(12)은 쉽게 마모되었고, 이에 따라 상기 웨이퍼(W)의 로딩/언로딩시 상기 웨이퍼(W)를 드롭시키는 원인으로 작용하였다.Since the o-ring 12 is made of a rubber material, the o-ring 12 of the rubber material is easily worn when continuously used, and thus the wafer (w / w) when the wafer W is loaded / unloaded. It acted as a cause of dropping W).

따라서 종래의 이온주입장치에 구비되는 오리엔트의 오-링으로 인하여 전술한 결함 등이 노출됨으로써 반도체소자의 제조에 따른 생산성이 저하되는 문제점이 있었다.Therefore, the above-described defects are exposed due to the o-ring of the orients provided in the conventional ion implantation apparatus, thereby causing a problem in that the productivity of manufacturing the semiconductor device is lowered.

본 발명의 목적은, 이온주입장치에 구비되는 오리엔트의 오-링을 개선시켜 전술한 결함 등을 해소함으로써 반도체소자의 제조에 따른 생산성을 향상시키기 위한 반도체소자 제조용 이온주입장치을 제공하는 데 있다.SUMMARY OF THE INVENTION An object of the present invention is to provide an ion implantation device for manufacturing a semiconductor device for improving productivity according to the fabrication of a semiconductor device by improving the o-ring of an orient provided in the ion implantation device and eliminating the above-mentioned defects.

도1은 종래의 반도체소자 제조용 이온주입장치에 구비되는 오리엔트를 설명하기 위한 평면도이다.1 is a plan view for explaining an orient provided in a conventional ion implantation device for manufacturing a semiconductor device.

도2는 본 발명에 따른 반도체소자 제조용 이온주입장치의 일 실시예를 설명하기 위한 모식도이다.2 is a schematic diagram for explaining an embodiment of an ion implantation apparatus for manufacturing a semiconductor device according to the present invention.

도3은 본 발명에 따른 반도체소자 제조용 이온주입장치에 구비되는 오리엔트를 설명하기 위한 평면도이다.3 is a plan view for explaining an orientation provided in the ion implantation apparatus for manufacturing a semiconductor device according to the present invention.

※도면의 주요부분에 대한 부호의 설명※ Explanation of symbols for main parts of drawing

W : 웨이퍼 10, 20 : 오리엔트W: Wafer 10, 20: Orient

12, 22 : 오-링12, 22: O-ring

상기 목적을 달성하기 위한 본 발명에 따른 반도체소자 제조용 이온주입장치는, 이온주입의 수행시 웨이퍼를 로딩/언로딩시킬 수 있는 오리엔트가 구비되는 반도체소자 제조용 이온주입장치에 있어서, 상기 오리엔트에는 그 원주부를 따라서 소정의 면적을 가지는 테프론재질의 오-링이 더 구비되는 것을 특징으로 한다.In the ion implantation apparatus for manufacturing a semiconductor device according to the present invention for achieving the above object, in the ion implantation apparatus for manufacturing a semiconductor device is provided with an orient capable of loading / unloading the wafer at the time of performing the ion implantation, the original O-rings of Teflon material having a predetermined area along the main portion is characterized in that it is further provided.

이하, 본 발명의 구체적인 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2는 본 발명에 따른 반도체소자 제조용 이온주입장치의 일 실시예를 설명하기 위한 모식도이고, 도3은 본 발명에 따른 반도체소자 제조용 이온주입장치에 구비되는 오리엔트를 설명하기 위한 평면도이다.2 is a schematic view for explaining an embodiment of the ion implantation apparatus for manufacturing a semiconductor device according to the present invention, Figure 3 is a plan view for explaining an orient provided in the ion implantation apparatus for manufacturing a semiconductor device according to the present invention.

먼저, 도2는 이온주입장치 중에서 고에너지이온주입장치에 구비되는 오리엔트(20)를 나타낸다.First, FIG. 2 shows an orient 20 provided in a high energy ion implantation device among ion implantation devices.

즉, 이온주입의 수행시 웨이퍼(W)를 로딩/언로딩시킬 수 있도록 상기 오리엔트(20)를 구비시키는 것으로써, 이러한 오리엔트(20)에는 그 원주부를 따라서 구비되어 있는 오-링(22)에 면접시켜 상기 웨이퍼를 로딩/언로딩시키는 것이다.That is, the orient 20 is provided to load / unload the wafer W when performing ion implantation, such that the orient 20 has an o-ring 22 provided along the circumference thereof. The wafer is loaded / unloaded by an interview.

여기서 본 발명은 상기 오-링(22)을 도2 및 도3에 도시된 바와 같이 상기 원주부의 소정의 영역을 따라서 구비시키는 것이 아니라 상기 오리엔트(20)의 원주부를 따라서 소정의 면적을 가지도록 구비시킨다.In the present invention, the o-ring 22 is not provided along a predetermined area of the circumference as shown in FIGS. 2 and 3, but has a predetermined area along the circumference of the orient 20. Equipped to make.

그리고 본 발명은 상기 오-링(22)을 상기 웨이퍼(W)의 로딩/언로딩시 그 흡착력을 향상시킬 수 있고, 또한 내마모성을 가지는 테프론(Teflon)재질로 형성시킬 수 있다.In addition, the present invention may improve the adsorption force of the O-ring 22 when loading / unloading the wafer W, and may be formed of a Teflon material having wear resistance.

이에 따라 본 발명은 상기 웨이퍼(W)를 완전히 밀착시킨 상태에서 로딩/언로딩을 수행함으로써, 상기 웨이퍼(W)가 흔들리거나, 드롭되는 상황의 발생을 최소화시킬 수 있다.Accordingly, in the present invention, loading / unloading is performed in a state where the wafer W is completely in contact with each other, thereby minimizing the occurrence of a situation in which the wafer W is shaken or dropped.

또한 상기 오-링(22)을 내마모성을 가지는 테프론재질로 형성시킴으로써 상기와 같은 상황의 발생을 최소화시킬 뿐만 아니라 상기 오-링(22)의 마모로 인한 파티클(Particle)의 발생을 최소화시킬 수도 있다.In addition, the O-ring 22 may be formed of a Teflon material having wear resistance, thereby minimizing the occurrence of such a situation and minimizing the generation of particles due to wear of the O-ring 22. .

따라서, 본 발명에 의하면 이온주입장치에 구비되는 오리엔트의 오-링을 개선시켜 전술한 결함 등을 해소함으로써 반도체소자의 제조에 따른 생산성이 향상되는 효과가 있다.Therefore, according to the present invention, the o-ring of the orients provided in the ion implantation apparatus is improved to solve the above-described defects, thereby improving productivity according to the manufacture of the semiconductor device.

이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (1)

이온주입의 수행시 웨이퍼(Wafer)를 로딩/언로딩(Loading/Unloading)시킬 수 있는 오리엔트(Orient)가 구비되는 반도체소자 제조용 이온주입장치에 있어서,In the ion implantation device for manufacturing a semiconductor device provided with an orient (Orient) that can load / unload the wafer during the ion implantation, 상기 오리엔트에는 그 원주부를 따라서 소정의 면적을 가지는 테프론(Teflon)재질의 오-링(O-ring)이 더 구비되는 것을 특징으로 하는 반도체소자 제조용 이온주입장치.The orient is an ion implantation device for manufacturing a semiconductor device, characterized in that the O-ring (O-ring) of a Teflon material having a predetermined area along the circumference is further provided.
KR1019980038083A 1998-09-15 1998-09-15 Ion-injection apparatus for manufacturing semiconductor device KR20000019810A (en)

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