KR19990083288A - 집속이온빔에의한단면형성관찰방법 - Google Patents
집속이온빔에의한단면형성관찰방법 Download PDFInfo
- Publication number
- KR19990083288A KR19990083288A KR1019990013700A KR19990013700A KR19990083288A KR 19990083288 A KR19990083288 A KR 19990083288A KR 1019990013700 A KR1019990013700 A KR 1019990013700A KR 19990013700 A KR19990013700 A KR 19990013700A KR 19990083288 A KR19990083288 A KR 19990083288A
- Authority
- KR
- South Korea
- Prior art keywords
- ion beam
- cross
- focused ion
- sample
- section
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 title description 9
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 230000001939 inductive effect Effects 0.000 claims description 2
- 238000000992 sputter etching Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 32
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000004075 alteration Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000000027 scanning ion microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/303—Electron or ion optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP98-108310 | 1998-04-17 | ||
| JP10108310A JPH11307417A (ja) | 1998-04-17 | 1998-04-17 | 集束イオンビームによる断面加工観察方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19990083288A true KR19990083288A (ko) | 1999-11-25 |
Family
ID=14481477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990013700A KR19990083288A (ko) | 1998-04-17 | 1999-04-17 | 집속이온빔에의한단면형성관찰방법 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH11307417A (zh) |
| KR (1) | KR19990083288A (zh) |
| TW (1) | TW386178B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583768B1 (ko) * | 2004-07-07 | 2006-05-26 | 한국과학기술원 | 광압을 이용한 입자빔 집속장치 |
| KR20200052347A (ko) * | 2017-10-10 | 2020-05-14 | 에이에스엠엘 네델란즈 비.브이. | 저선량 하전 입자 계측 시스템 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3872245B2 (ja) * | 2000-01-14 | 2007-01-24 | エスアイアイ・ナノテクノロジー株式会社 | 試料の断面構造観察方法 |
| JP5101845B2 (ja) * | 2006-08-21 | 2012-12-19 | エスアイアイ・ナノテクノロジー株式会社 | 集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 |
| TWI447385B (zh) * | 2011-09-16 | 2014-08-01 | Inotera Memories Inc | 一種使用聚焦離子束系統進行晶片平面成像的方法 |
-
1998
- 1998-04-17 JP JP10108310A patent/JPH11307417A/ja active Pending
-
1999
- 1999-04-16 TW TW088106147A patent/TW386178B/zh not_active IP Right Cessation
- 1999-04-17 KR KR1019990013700A patent/KR19990083288A/ko not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100583768B1 (ko) * | 2004-07-07 | 2006-05-26 | 한국과학기술원 | 광압을 이용한 입자빔 집속장치 |
| KR20200052347A (ko) * | 2017-10-10 | 2020-05-14 | 에이에스엠엘 네델란즈 비.브이. | 저선량 하전 입자 계측 시스템 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11307417A (ja) | 1999-11-05 |
| TW386178B (en) | 2000-04-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |