KR19990053454A - Beam lead bonding apparatus and method for beam lead bonding defect detection - Google Patents
Beam lead bonding apparatus and method for beam lead bonding defect detection Download PDFInfo
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- KR19990053454A KR19990053454A KR1019970073080A KR19970073080A KR19990053454A KR 19990053454 A KR19990053454 A KR 19990053454A KR 1019970073080 A KR1019970073080 A KR 1019970073080A KR 19970073080 A KR19970073080 A KR 19970073080A KR 19990053454 A KR19990053454 A KR 19990053454A
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Abstract
본 발명에 의한 빔리드본딩 불량 검출용 빔리드본딩장치는 빔리드본딩을 실시하면서 제어부의 빔리드본딩불량 검출용 전류를 본딩헤드, 트랜스듀서, 빔리드본딩부, 빔리드, 반도체칩, 히터블럭을 순차적으로 거쳐 다시 제어부의 접지단으로 피드백시킨다.In the beam lead bonding apparatus for detecting a beam lead bonding failure according to the present invention, the beam head bonding current is detected by the control unit for the beam lead bonding failure detection of the head, the transducer, the beam lead bonding unit, the beam lead, the semiconductor chip, and the heater block. After sequentially passing through the feedback to the ground terminal of the control unit.
따라서, 본 발명은 상기 피드백된 전류의 세기를 검출하여 빔리드본딩의 양, 불량을 판단하므로 공정의 신뢰성을 향상시킨다.Therefore, the present invention improves the reliability of the process by detecting the intensity of the feedback current and determining the amount and defect of beam lead bonding.
Description
본 발명은 마이크로 BGA(ball grid array)의 빔리드본딩에 관한 것으로, 더욱 상세하게는 빔리드본딩을 실시함과 아울러 빔리드본딩의 양, 불량을 검출하여 빔리드본딩의 신뢰성을 확보하도록 한 빔리드본딩불량검출용 빔리드본딩장치 및 방법에 관한 것이다.The present invention relates to beam lead bonding of a micro ball grid array (BGA), and more particularly, to perform beam lead bonding, and to detect the amount and defect of beam lead bonding, thereby ensuring the reliability of beam lead bonding. The present invention relates to a beam lead bonding apparatus and method for lead bonding defect detection.
일반적으로 널리 알려진 바와 같이, 전자기기와 정보기기의 메모리용량이 대용량화함에 따라 DRAM과 SRAM과 같은 반도체 메모리칩의 고집적화가 가속화하고 칩사이즈가 증대하고 있다. 그리고, 전자기기와 정보기기의 경량화 추세에 따라 반도체칩 패키지의 경박단소화 및 고신뢰성이 요구되고 있다.As is generally known, as the memory capacities of electronic devices and information devices are increased, high integration of semiconductor memory chips such as DRAM and SRAM is accelerating, and chip sizes are increasing. In addition, as the electronic devices and information devices become lighter in weight, thin and short and high reliability of semiconductor chip packages are required.
이에 따라, 반도체 제조회사들은 반도체칩의 크기에 해당하는 칩스케일 패키지를 개발하기 시작하였는데, 이들은 자사 고유의 칩스케일 아이디어를 이용하여 구조 및 제조방법을 달리하고 있다. 이러한 칩스케일 패키지중의 일종인 마이크로 BGA(micro-BGA)가 크게 주목받아 왔다.As a result, semiconductor manufacturers have begun to develop chip-scale packages corresponding to the size of semiconductor chips, which use their own chip-scale ideas to change the structure and manufacturing method. One of such chip-scale packages, micro BGA (micro-BGA), has attracted much attention.
도 1은 종래 기술에 의한 마이크로 BGA의 빔리드본딩장치를 나타낸 개략도이다.1 is a schematic view showing a beam lead bonding apparatus of a micro BGA according to the prior art.
도 1에 도시된 바와 같이, 종래의 빔리드본딩장치는 절연성 빔리드본딩부(41)가 초음파진동하는 트랜스듀서(43)의 선단부에 지지되고 상기 트랜스듀서(43)가 본딩헤드(45)로부터 공급되는 전류에 의해 초음파진동하고, 상기 본딩헤드(45)가 제어부(47)에 의해 제어되는 구조로 이루어져 있다. 여기서, 빔리드본딩부(41)는 봉형구조로서 세라믹, 텅스텐카바이드(Tungsten Carbide) 또는 다이아몬드의 재질로 이루어져 있다.As shown in FIG. 1, the conventional beam lead bonding apparatus is supported by the tip of the transducer 43 in which the insulating beam lead bonding portion 41 is ultrasonically vibrated, and the transducer 43 is moved from the bonding head 45. Ultrasonic oscillation is performed by the supplied current, and the bonding head 45 is controlled by the controller 47. Here, the beam lead bonding portion 41 is made of a material of ceramic, tungsten carbide or diamond as a rod-shaped structure.
이와 같이 구성된 빔리드본딩장치를 이용하여 빔리드본딩과정을 살펴보면, 먼저, 반도체칩(1)이 탄성 접착제(3),(4)에 의해 마이크로 BGA의 기판인 폴리이미드테이프(11)의 하면에 접착되고, 상기 폴리이미드테이프(11)가 양측 빔리드본딩용 캐리어프레임(20)의 사이에 위치하도록 접착테이프(30)에 의해 캐리어프레임(20)의 하면에 접착되어 있다. 여기서, 폴리이미드테이프(11)의 하면에 소정 패턴의 빔리드(13)가 접착되어 있다Referring to the beam lead bonding process using the beam lead bonding device configured as described above, first, the semiconductor chip 1 is formed on the bottom surface of the polyimide tape 11 which is a substrate of the micro BGA by the elastic adhesives 3 and 4. The polyimide tape 11 is bonded to the lower surface of the carrier frame 20 by the adhesive tape 30 so that the polyimide tape 11 is positioned between the beam frames for both beam lead bonding. Here, the beam lead 13 of a predetermined pattern is adhered to the lower surface of the polyimide tape 11.
이러한 상태의 캐리어프레임(20)을 빔리드본딩장치의 지지대(도시 안됨)에 지지한다. 이때, 반도체칩(1)의 하면이 빔리드본딩을 양호하게 하도록 소정 온도의 히터블럭(50)의 상부면에 접촉하여 가열된다.The carrier frame 20 in this state is supported by a support (not shown) of the beam lead bonding apparatus. At this time, the lower surface of the semiconductor chip 1 is heated in contact with the upper surface of the heater block 50 at a predetermined temperature to improve beam lead bonding.
이후, 제어부(47)가 트랜스듀서(43)를 이동시키는 이동부(도시 안됨)를 제어하여 봉형태의 빔리드본딩부(41)를 처음 빔리드본딩할 빔리드(13)에 해당하는, 폴리이미드테이프(11)의 관통홀(15) 상의 위치로 이동시키고 나서 트랜스듀서(43)를 소정의 경로를 따라 하강시킴에 따라 빔리드본딩부(41)도 폴리이미드테이프(11)의 관통홀(15)을 통과하여 상기 경로를 따라 이동한다. 여기서, 빔리드본딩부(41)가 절연성 재질, 예를 들어 세라믹, 텅스텐카바이드(Tungsten Carbide) 또는 다이아몬드의 재질로 이루어져 있다.Thereafter, the control unit 47 controls the moving unit (not shown) for moving the transducer 43 so that the poly corresponding to the beam lead 13 to beam-bond the rod-shaped beam lead bonding unit 41 for the first time. As the transducer 43 is moved down along the predetermined path after moving to the position on the through hole 15 of the mid tape 11, the beam lead bonding portion 41 also has a through hole (of the polyimide tape 11). Go through the path 15). Here, the beam lead bonding portion 41 is made of an insulating material, for example, ceramic, tungsten carbide or diamond.
따라서, 해당 빔리드(13)의 일측이 폴리이미드테이프(11)로부터 분리되면서 절곡되어 반도체칩(1)의 본딩패드(도시 안됨)에 접촉한다.Accordingly, one side of the beam lead 13 is bent while being separated from the polyimide tape 11 to contact the bonding pad (not shown) of the semiconductor chip 1.
그러고 나면, 본딩헤드(45)가 트랜스듀서(43)를 제어하여 초음파 진동시키므로 빔리드본딩부(41)도 초음파 진동하여 빔리드(13)와 본딩패드를 접합시킨다.Then, since the bonding head 45 controls the transducer 43 to cause ultrasonic vibration, the beam lead bonding portion 41 also ultrasonically vibrates to bond the beam lead 13 to the bonding pad.
이후, 하나의 빔리드(13)가 빔리드본딩 완료되면, 빔리드본딩부(41)를 다음 빔리드본딩할 빔리드(13)로 이동시켜 상기 방식으로 빔리드본딩을 실시한다.Subsequently, when one beam lead 13 is completed, the beam lead bonding unit 41 moves the beam lead bonding unit 41 to the beam lead 13 to be next beam lead bonded, thereby performing beam lead bonding.
이와 같은 방법에 의해 모든 빔리드(13)와 상기 본딩패드를 대응하여 본딩하여 빔리드본딩을 완료한다.In this manner, the beam lead bonding is completed by bonding all the beam leads 13 and the bonding pads correspondingly.
그러나, 종래에는 빔리드본딩시 빔리드(13)가 반도체칩(1)의 본딩패드에 정상적으로 접합하지 못하고 접합 표시만 남는 NSOP(non-sticking of pad) 현상이 발생하거나 또는 빔리드(13)가 상기 본딩패드에 정상적으로 접합하였더라도 빔리드(13)의 접합면적이 좁아 전기적 특성에 악영향을 미치는 NSOL(non-sticking of lead) 현상이 자주 발생함에도 불구하고 빔리드본딩공정 도중에 이를 전혀 검출할 수 없었다.However, conventionally, when the beam lead bonding, the non-sticking of pad (NSOP) phenomenon in which the beam lead 13 does not normally bond to the bonding pad of the semiconductor chip 1 and only the bonding mark remains, or the beam lead 13 Even though the bonding pad is normally bonded to the bonding pad, although the bonding area of the beam lead 13 is narrow, a non-sticking of lead (NSOL) phenomenon, which adversely affects electrical characteristics, frequently occurs, it cannot be detected at all during the beam lead bonding process.
따라서, 본 발명의 목적은 빔리드본딩을 실시하면서 빔리드본딩불량을 검출하여 공정의 신뢰성을 향상시키도록 한 빔리드본딩불량검출용 빔리드본딩장치 및 방법을 제공하는데 있다.Accordingly, an object of the present invention is to provide a beam lead bonding apparatus and method for beam lead bonding defect detection, which detects beam lead bonding defects while performing beam lead bonding to improve process reliability.
도 1은 종래 기술에 의한 마이크로 BGA의 빔리드본딩장치를 나타낸 개략도.1 is a schematic view showing a beam lead bonding apparatus of a micro BGA according to the prior art.
도 2는 본 발명에 의한 빔리드본딩불량검출용 빔리드본딩장치를 나타낸 개략도.Figure 2 is a schematic diagram showing a beam lead bonding device for detecting the beam lead bonding failure according to the present invention.
<도면의주요부분에대한부호의설명>Explanation of symbols on the main parts of the drawing
1: 반도체칩 3,4: 탄성 접착제 11: 폴리이미드테이프 13: 빔리드 15: 관통홀 20: 캐리어프레임 30: 접착테이프 41: 빔리드본딩부 43: 트랜스듀서 45: 본딩헤드 47: 제어부 50: 히터블럭DESCRIPTION OF SYMBOLS 1 Semiconductor chip 3, 4 Elastic adhesive 11: Polyimide tape 13: Beam lead 15: Through hole 20: Carrier frame 30: Adhesive tape 41: Beam lead bonding part 43: Transducer 45: Bonding head 47: Control part 50: Heater Block
이와 같은 목적을 달성하기 위한 본 발명에 의한 빔리드본딩불량검출용 빔리드본딩장치는Beam lead bonding apparatus for detecting beam lead bonding defects according to the present invention for achieving the above object
마이크로 BGA의 기판에 형성된 빔리드와 반도체칩의 본딩패드를 대응하여 빔리드본딩하는, 전도성 재질로 이루어진 빔리드본딩부;A beam lead bonding unit made of a conductive material to beam lead bond the beam lead formed on the substrate of the micro BGA with the bonding pad of the semiconductor chip;
상기 빔리드본딩부를 선단부에 지지하며 초음파진동시키는 트랜스듀서;A transducer for ultrasonically vibrating the beam lead bonding portion while supporting the tip portion;
상기 트랜스듀서의 초음파진동을 위해 상기 트랜스듀서에 전기를 전달하는 본딩헤드; 그리고A bonding head transferring electricity to the transducer for ultrasonic vibration of the transducer; And
상기 본딩헤드를 제어함과 아울러 상기 빔리드본딩의 양, 불량 여부를 검출하는 제어부를 포함하는 것을 특징으로 한다.And a control unit for controlling the bonding head and detecting the amount and defect of the beam lead bonding.
또한, 이와 같은 목적을 달성하기 위한 본 발명에 의한 빔리드본딩불량검출용 빔리드본딩방법은In addition, the beam lead bonding method for detecting the beam lead bonding failure according to the present invention for achieving the above object
따라서, 상기 제어부의 전류가 상기 빔리드본딩의 불량을 검출하기 위해 상기 본딩헤드, 상기 트랜스듀서, 상기 빔리드본딩부, 상기 빔리드, 상기 반도체칩, 상기 히터블럭을 순차적으로 거쳐 피드백된다. 상기 제어부가 상기 피드백되는 전류의 세기를 검출하여 상기 빔리드본딩 불량을 검출한다.Accordingly, the current of the control unit is sequentially fed back through the bonding head, the transducer, the beam lead bonding unit, the beam lead, the semiconductor chip, and the heater block to detect a failure of the beam lead bonding. The control unit detects the beam lead bonding failure by detecting the strength of the feedback current.
이하, 본 발명에 의한 빔리드본딩불량검출용 빔리드본딩장치를 첨부한 도면을 참조하여 상세히 설명하기로 한다. 종래의 부분과 동일한 부분에는 동일한 부호를 부여한다.Hereinafter, a beam lead bonding apparatus for detecting beam lead bonding defects according to the present invention will be described in detail with reference to the accompanying drawings. The same code | symbol is attached | subjected to the part same as a conventional part.
도 2는 본 발명에 의한 빔리드본딩불량검출용 빔리드본딩장치를 나타낸 개략도이다.2 is a schematic diagram showing a beam lead bonding apparatus for detecting a beam lead bonding defect according to the present invention.
도 2에 도시된 바와 같이, 본 발명의 빔리드본딩불량 검출장치는 빔리드본딩부(42)가 빔리드본딩부(41)와 달리 도전성이고, 히터블럭(50)이 제어부(47)에 전기적으로 연결된 것을 제외하면 도 1의 구조와 동일하다.As shown in FIG. 2, in the beam lead bonding failure detecting apparatus of the present invention, the beam lead bonding unit 42 is conductive unlike the beam lead bonding unit 41, and the heater block 50 is electrically connected to the control unit 47. Except that connected to is the same as the structure of FIG.
이와 같이 구성된 빔리드본딩장치를 이용하여 빔리드본딩불량 검출방법을 살펴보면, 먼저, 반도체칩(1)이 탄성의 접착제(3),(4)에 의해 BGA기판인 폴리이미드테이프(11)의 하면에 접착되고, 상기 폴리이미드테이프(11)가 양측 빔리드본딩용 캐리어프레임(20)의 사이에 위치하도록 접착테이프(30)에 의해 캐리어프레임(20)의 하면에 접착되어 있다.Looking at the beam lead bonding failure detection method using the beam lead bonding device configured as described above, first, the semiconductor chip 1 is the bottom surface of the polyimide tape 11 of the BGA substrate by the elastic adhesive (3), (4) The polyimide tape 11 is bonded to the lower surface of the carrier frame 20 by the adhesive tape 30 so that the polyimide tape 11 is positioned between the carrier frames 20 for both beam lead bonding.
이러한 상태의 캐리어프레임(20)을 빔리드본딩장치의 지지대(도시 안됨)에 지지한다. 이때, 반도체칩(1)의 하면이 빔리드본딩을 양호하게 하도록 소정 온도로의 히터블럭(50)의 상부면에 접촉하여 가열된다.The carrier frame 20 in this state is supported by a support (not shown) of the beam lead bonding apparatus. At this time, the lower surface of the semiconductor chip 1 is heated in contact with the upper surface of the heater block 50 at a predetermined temperature to improve beam lead bonding.
이후, 제어부(47)가 트랜스듀서(43)를 이동시키는 이동부(도시 안됨)를 제어하여 빔리드본딩부(42)를 처음 빔리드본딩할 빔리드(13)에 해당하는, 폴리이미드테이프(11)의 관통홀(15) 상의 위치로 이동시키고 나서 트랜스듀서(43)를 소정의 경로를 따라 하강시킴에 따라 빔리드본딩부(42)가 BGA기판(11)의 관통홀(15)을 통과하여 상기 경로를 따라 이동한다.Subsequently, the control unit 47 controls a moving unit (not shown) for moving the transducer 43 so that the polyimide tape (corresponding to the beam lead 13 to beam lead bonding the beam lead bonding unit 42 first) The beam lead bonding portion 42 passes through the through hole 15 of the BGA substrate 11 by moving it to a position on the through hole 15 of 11) and then lowering the transducer 43 along a predetermined path. To move along the path.
따라서, 해당 빔리드(13)가 BGA기판(11)으로부터 분리되면서 절곡되어 반도체칩(1)의 본딩패드(도시 안됨)에 접촉한다.Accordingly, the beam lead 13 is bent while being separated from the BGA substrate 11 to be in contact with a bonding pad (not shown) of the semiconductor chip 1.
그러고 나면, 본딩헤드(45)가 트랜스듀서(43)를 제어하여 초음파진동시키므로 빔리드본딩부(42)도 초음파진동하여 빔리드(13)와 상기 본딩패드를 접합시킨다. 이와 동시에 제어부(47)의 빔리드불량 검출용 전류가 본딩헤드(45)와 트랜스듀서(43), 빔리드본딩부(42), 빔리드(13), 반도체칩(1)의 본딩패드 및 히터블럭(50)을 순차적으로 거쳐 다시 제어부(47)의 접지단으로 피드백된다.Then, since the bonding head 45 controls the transducer 43 to ultrasonically vibrate, the beam lead bonding part 42 also ultrasonically vibrates to bond the beam lead 13 to the bonding pad. At the same time, the current for detecting the lead failure of the control unit 47 is coupled to the bonding head 45 and the transducer 43, the beam lead bonding unit 42, the beam lead 13, and the bonding pad and heater of the semiconductor chip 1. The block 50 is sequentially fed back to the ground terminal of the controller 47.
상기 제어부(47)가 상기 피드백된 전류의 세기를 검출하여 해당 빔리드본딩의 양, 불량 여부를 판단한다. 즉, 양호한 빔리드본딩의 경우, 상기 패드백된 전규의 세기가 크고, 불량한 빔리드본딩의 경우, 상기 패드백된 전류의 세기가 약한 것으로 검출된다.The controller 47 detects the strength of the feedback current and determines whether the beam lead bonding is bad or not. That is, in the case of good beam lead bonding, the strength of the pad backed electrical power is large, and in the case of poor beam lead bonding, it is detected that the strength of the pad back current is weak.
이후, 하나의 빔리드(13)가 빔리드본딩완료되면, 빔리드본딩부(42)를 다음 빔리드본딩할 빔리드(13)로 이동시켜 상기 방식으로 빔리드본딩을 실시한다.Then, when one beam lead 13 is completed, the beam lead bonding unit 42 moves the beam lead bonding unit 42 to the beam lead 13 to be next beam lead bonded to perform beam lead bonding in this manner.
이와 같은 방법에 의해 모든 빔리드(13)와 상기 본딩패드를 대응하여 본딩하여 빔리드본딩을 완료한다.In this manner, the beam lead bonding is completed by bonding all the beam leads 13 and the bonding pads correspondingly.
이상에서 살펴본 바와 같이, 본 발명에 의한 빔리드본딩불량검출용 빔리드본딩장치는 빔리드본딩을 실시하면서 제어부의 빔리드본딩불량검출용 전류를 본딩헤드, 트랜스듀서, 빔리드본딩부, 빔리드, 반도체칩, 히터블럭을 순차적으로 거쳐 다시 제어부의 접지단으로 피드백시킨다.As described above, the beam lead bonding apparatus for detecting beam lead bonding defects according to the present invention performs beam lead bonding and performs current detection for detecting the beam lead bonding defects of the control unit, such as a bonding head, a transducer, a beam lead bonding unit, and a beam lead. The semiconductor chip and the heater block are sequentially fed back to the ground terminal of the controller.
따라서, 본 발명은 상기 피드백된 전류의 세기를 검출하여 빔리드본딩의 양, 불량을 판단하므로 공정의 신뢰성을 향상시킨다.Therefore, the present invention improves the reliability of the process by detecting the intensity of the feedback current and determining the amount and defect of beam lead bonding.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019970073080A KR19990053454A (en) | 1997-12-24 | 1997-12-24 | Beam lead bonding apparatus and method for beam lead bonding defect detection |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019970073080A KR19990053454A (en) | 1997-12-24 | 1997-12-24 | Beam lead bonding apparatus and method for beam lead bonding defect detection |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100610143B1 (en) * | 2000-07-21 | 2006-08-09 | 삼성전자주식회사 | Beam lead bonding apparatus detecting cutting failure of beam leads and method for bonding beam leads using the same |
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1997
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100610143B1 (en) * | 2000-07-21 | 2006-08-09 | 삼성전자주식회사 | Beam lead bonding apparatus detecting cutting failure of beam leads and method for bonding beam leads using the same |
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