KR19990039059U - HQDIAL Beth's Pure Cooling System for Semiconductor Wafer Cleaning - Google Patents

Abstract

The present invention relates to a pure water cooling device of HQDial Bess for semiconductor wafer cleaning. In the related art, direct contact of pure water having a relatively high temperature to a sink formed of a fibish material having low heat resistance due to insufficient cooling of the pure water by a cooling water injection tube. When the welding part of the drain pipe deteriorates during the deterioration, or the deformed part is damaged by the physical impact of the coolant falling from the coolant jetting pipe, it causes a safety accident as well as an increase in the repair time due to the damage of the equipment. In the present invention, there is a possibility that the efficiency of the equipment is lowered. In the present invention, an inner tank in which high-temperature pure water is supplied to clean the wafer deposited therein, and an outer tank in which the pure water overflowed from the inner tank is freshly discharged to the outside of the equipment And cooling water dropped from the cooling water injection pipe attached to the bottom of the inner tank to the sink. The cooling water receiving plate is disposed between the sink and the inner tank so as to prevent the coolant from the inner tank and the cooling water sprayed from the cooling water injection pipe not directly contacting the sink. It is effective in preventing damage.

Description

HQDIAL Beth's pure water cooling system for semiconductor wafer cleaning

The present invention relates to a semiconductor wafer cleaning HCD dial, and more particularly, to a pure water cooling device for a semiconductor wafer cleaning HQQDial bath suitable for preventing the hot water from flooding and damaging the welding part of the sink.

Generally, the wet station supplies chemicals such as hydrogen peroxide (H ₂ O ₂ ) or pure water (DI Water) according to the characteristics of each bath to remove particles of the wafer after etching process using chemicals such as hydrofluoric acid (HF). It is intended that, in general, a first SC bath, a first Hot Quick Dump Rinse (HQDR) bath, a first rinse bath (Rinse Bath), a second SC bath, a second HQDR bath, a second rinse bath, an F / R bath, IPA baths are installed in sequence.

Among them, the HQDR bath is a pure water bath, which cleans a wafer after supplying pure water at about 80 ° C. repeatedly to clean chemically. FIG. 1 is a perspective view showing an example of a conventional HQDR bath.

As shown in the drawing, the conventional HQDR bath 1 has four base supports 3 generally disposed on an upper surface of the sink 2, and an edge of the base 1 on the top surface of the base support 3. A bath guide 4 having only a portion formed in a skeleton shape is fixedly installed, and the HQDR bath 1 is placed inside the bath support 3 to have a predetermined height.

One side of the sink 2 is formed with a drain port 2a for discharging the pure water overflowing from the bath 1, and a drain pipe 5 is welded to the bottom of the drain port 2a as shown in FIG. .

On the bottom of the bath 1, a cooling water injection pipe 6 for injecting cooling water is attached from the outside to cool the overflowing pure water.

In the drawings, reference numeral 1a denotes a Beth hooking jaw, 4a is a hook hanger plate, 7 is a pure shower, 8 is a pure jet tube, 9 is a bead separator.

The wafer cleaning process in the conventional HQDR bath is as follows.

First, when a plurality of wafers (not shown) are collectively transferred to the inside of the bath 1, from the pure water shower 7 and the pure water injection tube 8 provided on the upper and lower sides of the bath 1, respectively. About 80 ° C of pure water is sprayed upward and downward to drop particles adhering to the wafer, and then the pure water filled in the bath 1 overflows the bath 1 and falls into the sink 2, and the falling water The pure water flowed into the drain port 2a and was discharged to the outside through the drain pipe 5.

At this time, the pure water overflowing the bath 1 is mixed with the pure water from the cooling water is injected from the cooling water injection pipe 6 attached to the bottom of the bath 1 in consideration of the high temperature of about 80 ℃. The temperature of pure water was reduced.

However, in the conventional HQDR bath as described above, the cooling of the pure water by the cooling water injection pipe 6 is insufficient, so that the high temperature of the pure water is relatively high relative to the sink 2 formed of a PVC material having low heat resistance. Deterioration of the welding part of the drain pipe 5 during contact causes deformation, or the deformed part is damaged by the physical impact of the coolant falling from the coolant jet pipe 6, leading to safety accidents as well as damage to the equipment. There was a fear that the efficiency of the equipment would be lowered due to the increase in repair time.

Therefore, the present invention was devised in view of the problems of the conventional HQDR bath, and the high temperature pure water overflowing from the bath, as well as the cooling water sprayed from the cooling water injection pipe, do not directly contact the sink, so that the heat deformation and damage of the sink SUMMARY OF THE INVENTION An object of the present invention is to provide a pure water cooling device of HQDIAL BETH for cleaning a semiconductor wafer.

1 is a perspective view showing an example of a conventional HQ dials.

Figure 2 is a longitudinal sectional view showing a conventional HQ dials.

Figure 3 is a longitudinal cross-sectional view showing a HQ dial dial according to the present invention.

Figure 4 is a perspective view showing a cooling water receiving plate of HQ dialial according to the present invention.

* Description of the symbols for the main parts of the drawings *

2: sink 3: bath support

4: Beth Guide 10: Beth

11: inner tide 12: outer tide

20: cooling water receiving plate 21: drain

30: drain pipe

In order to achieve the object of the present invention, the inner tank in which the high-temperature pure water is supplied and the wafer deposited therein is cleaned, and the outer tank to allow the pure water overflowing from the inner tank to be freshly discharged to the outside of the equipment, Pure water cooling device of HQDIALESS for semiconductor wafer cleaning comprising a coolant receiving plate disposed between the sink and the inner tank so that the coolant falling from the coolant spray pipe attached to the bottom of the inner tank does not contact the sink. Is provided.

Hereinafter, a pure water cooling apparatus of HQDIAL BETH for cleaning a semiconductor wafer according to the present invention will be described in detail with reference to an embodiment shown in the accompanying drawings.

Figure 3 is a longitudinal sectional view showing a HQ dials according to the present invention, Figure 4 is a perspective view showing a cooling water receiving plate of the HQ dials according to the present invention.

As shown therein, the HQDR bath 10 according to the present invention includes an inner tank 11 in which a high temperature of pure water is supplied, and a wafer (not shown) deposited therein is cleaned, and the pure water overflowed from the inner tank 11. The sink 12 so that the fresh water is discharged to the outside of the equipment and the coolant dripping from the coolant jet pipe 6 attached to the bottom of the inner tank 11 does not touch the sink 2. It consists of a cooling water receiving plate 20 disposed between the (2) and the inner tank 911.

The outer tank 12 is formed so that its bottom surface is recessed to one side so that the pure water overflowed from the inner tank 11 is easily accumulated, and a drain hole (unsign) through which the drain pipe 30 communicates is formed at the lowermost point of the depression. .

The cooling water receiving plate 20 is formed of a fibish material in consideration of contamination during the process, and is coated with a Teflon material having a high heat resistance on the upper surface. In addition, the receiving plate drain port 21 is integrally formed on one side of the cooling water receiving plate 2, and the receiving plate drain port 21 is fitted into the drain pipe 5 communicating with the sink 2.

In the drawings, the same reference numerals are given to the same parts as in the prior art.

In the drawings, reference numeral 3 denotes a bath support, 4 a bath guide, and 9 a bath separator.

The wafer cleaning process in the HQDR bath according to the present invention as described above is as follows.

First, when a plurality of wafers (not shown) are collectively transferred to the inside of the inner tank 11, the pure water shower (not shown) and the pure water injection tube 8 provided on the upper and lower sides of the inner tank 11, respectively. About 80 ° C. of pure water is sprayed upward and downward from the particles to drop the particles attached to the wafer, and the pure water filled in the inner tank 11 overflows the inner tank 11 and flows into the outer tank 12. Pure water introduced into (12) is discharged to the outside of the equipment through the drain (unsigned) and the drain pipe (30).

On the other hand, a part of the pure water overflowed from the inner tank 11 is not dropped into the outer tank 12, but falls as it is, the pure water is mixed with the cooling water injected from the cooling water injection pipe 6 and cooled while sink sink 5 Is discharged to the outside through.

At this time, the coolant injected from the coolant injection pipe 6 is not directly in contact with the sink 2, but is accumulated in the coolant receiving plate 20 and flows into the sink drain hole (unsigned) through the receiving plate drain hole 21 to the outside. Will be leaked.

As a result, since the high-temperature pure water up to about 80 ° C. and the cooling water for cooling it do not directly contact the sink 2, the welded portion of the drain pipe 5 welded to the sink 2 is thermally deformed or broken. Is prevented.

As described above, the pure water cooling apparatus of HQDial Bess for semiconductor wafer cleaning according to the present invention mainly includes an inner tank in which high temperature pure water is supplied and the wafer deposited therein is cleaned, and pure water overflowing from the inner tank. The inner tank by fresh water is discharged to the outside of the equipment, and the cooling water receiving plate disposed between the sink and the inner tank in order to prevent the coolant falling from the cooling water injection pipe attached to the bottom of the inner tank to reach the sink. As well as the high-temperature pure water overflowing from the cooling water is not directly in contact with the sink in the cooling water injection pipe is effective in preventing the heat deformation and breakage of the sink in advance.

Claims (3)

From an inner bath where high temperature pure water is supplied and the wafers deposited therein are cleaned, an outer tank for fresh water overflowing from the inner tank to be freshly discharged to the outside of the equipment, and a cooling water spray pipe attached to the bottom of the inner tank. A pure water cooling device of HQDIAL BETH for semiconductor wafer cleaning, comprising: a cooling water receiving plate disposed between the sink and the inner tank to prevent the falling coolant from contacting the sink. The semiconductor wafer cleaning according to claim 1, wherein the outer tank has a bottom surface formed to be recessed to one side so that the pure water overflowed from the inner tank is easily accumulated, and a drain hole is formed at the lowest point of the recess to communicate with the drain pipe. Pure water chiller of HQDIALESS. According to claim 1, wherein the cooling water receiving plate is a pure water cooling device of HQDIALAL bath for semiconductor wafer cleaning, characterized in that the upper surface is coated with a heat resistant strong Teflon material.