KR19990038727U - Reduction of Foreign Matter in Vessel for Semiconductor Wafer Drying Equipment - Google Patents

Abstract

The present invention relates to a structure for reducing foreign substances in a vessel for semiconductor wafer drying equipment. In the related art, the temperature of the pure water on the wafer before the inhalation of isopropyl alcohol vapor in the vessel is 40 to 45 ° C., so the temperature inside the wafer and the vessel is similar. Therefore, if isopropyl alcohol vapor at about 110-120 ° C is supplied inside the vessel in such a state, the isopropyl alcohol vapor is rapidly cooled to remove the foreign matter from the wafer because normal reaction with pure water on the wafer is impossible. In addition, the pure water on the wafer may remain in the form of water spots. Therefore, the present invention raises the internal temperature during the drying process to improve the reactivity between isopropyl alcohol vapor and pure water. By a heat source supply means provided to surround the wafer during the drying process By raising the temperature of a cell, to enhance the reactivity of the pure water that has accumulated on the wafer by the active molecular motion of the isopropyl alcohol, and to achieve a complete removal of pure water, thereby reducing as much as possible as well as what the like foreign matters remain on the wafer.

Description

Reduction of Foreign Matter in Vessel for Semiconductor Wafer Drying Equipment

The present invention relates to a vessel for semiconductor wafer drying equipment (VESSEL), and more particularly to a foreign material reduction structure of the vessel for semiconductor wafer drying equipment to reduce the occurrence of foreign matters left on the wafer during the drying process, or foreign matter.

As shown in FIG. 1, a general semiconductor wafer drying apparatus includes a process chamber 1 for performing an etching process, a cleaning process, and a drying process, and isopropyl alcohol vapor at about 110 to 120 ° C. in the process chamber 1. It is largely divided into isopropyl alcohol supply unit (not shown).

On one side of the process chamber 1, a wafer is seated and an opening 1a is formed so that the vessel 10 having the upper and lower surfaces opened therein is introduced or drawn out, and the vessel 10 is formed inside the process chamber 1. The seating part 2 is formed to be seated, and at the upper end of the process chamber 1, a chemical supply line (not shown) for etching the deposition film attached to the wafer W and a process chamber for cleaning operation are performed. (1) a pure water supply line (not shown) for supplying pure water of about 40 to 45 DEG C and an isopropyl alcohol supply line (4) (shown in FIG. 4) for supplying isopropyl alcohol vapor. The lower side of the process chamber 1 is connected to the chemical discharge line (not shown) and the pure water discharge line 5 (shown in FIG. 4) for discharging the pure water present in the process chamber when the cleaning operation is completed. have.

As shown in FIG. 2, the vessel 10 is made of a Teflon material so as to have excellent chemical resistance, and transmits vibration to the wafer W to remove foreign substances attached to the wafer W. The vibrator 11 is provided, and the support frame 12 is provided so that it may lead in or out of the process chamber 1 along the linear arm 3.

Referring to the operation of the semiconductor wafer drying apparatus according to the prior art configured as described above are as follows.

After the wafer W is seated in the vessel 10 by the wafer transfer robot (not shown), the wafer W is introduced into the process chamber 1 along the linear arm 3, and the etching operation is performed by the chemical. When this is completed, the chemical is discharged, and a predetermined amount of pure water is introduced into the vessel 10 through the pure water supply line 5 connected to the process chamber 1 to remove chemicals and foreign substances on the wafer W. You will be working.

When the predetermined wafer cleaning operation is completed as described above, pure water is discharged through the pure water discharge line 5 as shown in FIG. 4, and isopropyl alcohol vapor supplied from the isopropyl alcohol supply part flows into the vessel 10. In order to react with the pure water on the wafer W, the drying operation is performed to remove the pure water.

However, in the prior art as described above, since the temperature of the pure water buried in the wafer W before the isopropyl alcohol vapor flows into the vessel 10 is 40 to 45 ° C, the temperature inside the wafer W and the vessel 10 is also increased. It will be similar. In this state, when isopropyl alcohol vapor of about 110 to 120 ° C. is supplied to the inside of the vessel 10, the isopropyl alcohol vapor is rapidly cooled and normal reaction with pure water buried in the wafer W is impossible. Not only could not remove the foreign matter on the), there was a problem that the pure water on the wafer (W) can remain in the form of water spots.

Accordingly, the present invention has been devised to solve the above-mentioned problems, and the reactivity between isopropyl alcohol vapor and pure water supplied to react with pure water is increased by increasing the temperature inside the process chamber during the wafer drying process. The purpose of the present invention is to provide a foreign matter reduction structure of a vessel for semiconductor wafer drying equipment to reduce foreign matter generation.

1 is a perspective view showing an operation in which a vessel is inserted into a general process chamber.

Figure 2 is a plan view showing a vessel according to the prior art.

Figure 3 is a side view showing the vessel according to the prior art.

Figure 4 is a cross-sectional view showing an operation to proceed the drying process by the vessel is introduced into the interior of the process chamber according to the prior art.

5 is a plan view showing a vessel according to the present invention.

Figure 6 is a side view showing the vessel according to the present invention.

Explanation of symbols on the main parts of the drawings

10; Vessel 11; Heat source supply means

In order to achieve the object of the present invention as described above, the vessel of the semiconductor wafer drying equipment comprising a heat source supply means to increase the internal temperature during the drying process to improve the reactivity of isopropyl alcohol vapor and pure water. A foreign substance reduction structure is provided.

Hereinafter, an embodiment of the foreign material reduction structure of the vessel for semiconductor wafer drying equipment according to the present invention will be described with reference to the accompanying drawings.

A predetermined space portion is formed inside the vessel 10 to accommodate a plurality of wafers W, and both sides of the space portion are provided with an ultrasonic vibrator 11 for shaking off foreign matter from the wafer W. The support frame 12 is installed on one side of the vessel 10 so as to be drawn into the process chamber along the linear arm as in the prior art.

However, in the present invention, the temperature of the inside of the vessel 10 is increased during the drying process to improve the reactivity of isopropyl alcohol and pure water to surround the space part to facilitate the removal of pure water on the wafer (W). Feed means are provided.

The heat source supply means is composed of a heater 13 for supplying a heat source inside the vessel 10 and a power terminal 13a for supplying power to the heater 13.

Referring to the operation of the vessel for semiconductor wafer drying equipment according to the present invention configured as described above are as follows.

When the wafer W, which has been etched by the chemical, is disposed inside the process chamber by a wafer transfer robot (not shown), a predetermined amount of pure water is introduced into the process chamber through the pure water supply line and buried in the wafer W. After cleaning to remove chemicals and foreign substances, the pure water is discharged through the pure water discharge line, and isopropyl alcohol vapor supplied from the isopropyl alcohol supply part flows into the vessel 10 and is buried in the wafer W. It reacts with the pure water and proceeds with drying to remove the pure water.

At this time, by supplying a heat source from the heat source supply means 13 inherent in the vessel 10 to raise the temperature in the process chamber of about 40 ~ 45 ℃ to about 80 ℃, it is introduced into the vessel 10 As isopropyl alcohol vapor is not rapidly cooled due to the temperature difference between the inner wall of the vessel 10 and the wafer W, as in the prior art, the isopropyl alcohol vapor reacts with pure water to become a liquid state and is discharged into the pure water discharge line. It will completely remove water spots and foreign objects.

As described above, the foreign material reduction structure of the vessel for semiconductor wafer drying equipment according to the present invention is raised by the active molecular motion of isopropyl alcohol vapor by raising the temperature of the vessel by a heat source supply means installed to surround the wafer during the drying process. By improving the reactivity with the pure water on the wafer to achieve a complete removal of the pure water, and also to minimize the remaining foreign matter on the wafer.

Claims (1)

The foreign material reduction structure of the vessel for semiconductor wafer drying equipment, characterized in that the heat source supply means for increasing the internal temperature during the drying process to improve the reactivity of isopropyl alcohol vapor and pure water.