KR19990034521A - Liquid crystal display device and its manufacturing method and manufacturing equipment for producing the liquid crystal display device - Google Patents

Abstract

The present invention relates to a liquid crystal display device and a method for manufacturing the same, and to a manufacturing equipment for producing the liquid crystal display device, wherein after forming a doped silicon layer, for source / drain formation under vacuum conditions without undergoing a cleaning process In order to form a metal layer, the process of forming a doped semiconductor layer for forming an ohmic contact layer and the process of forming a conductive layer for forming a source / drain electrode are continuously performed in a vacuum state, and the conductive layer Patterned to form a source / drain electrode, and then a doped semiconductor layer is etched using the source / drain electrode as a mask to form an ohmic contact layer, and a pre-deposition cleaning operation for forming a conductive layer, By omitting the separation of the ohmic contact layer, the manufacturing process is simplified, and a natural oxide film is formed at the boundary between the ohmic contact layer and the source / drain electrodes. Prevents the formation or penetration of foreign objects.

Description

Liquid crystal display and its manufacturing method and manufacturing equipment for producing the liquid crystal display

The present invention relates to a liquid crystal display device and a method for manufacturing the same, and to a manufacturing equipment for producing the liquid crystal display device. In particular, after the doped silicon layer is formed, source / drain formation is maintained under vacuum without a cleaning process. A liquid crystal display device for forming a metal layer for use, a method for manufacturing the same, and a manufacturing equipment for producing the liquid crystal display device.

The manufacturing equipment for manufacturing the liquid crystal display device, like the general semiconductor manufacturing equipment, is located in relation to each chamber (chamber) for deposition, etching, cleaning, etc., from the chamber to the chamber by the automatic control device Substrate inflow and outflow is made.

Cleaning in a liquid crystal display is a process of removing foreign matter and particles on a glass substrate, and aims to improve yield by minimizing defects of TFTs. This includes initial cleaning to clean the pure glass substrate and pre-depo cleaning to remove foreign substances and particles generated before and after deposition. Cleaning is pure physical force using pure water. Ultrasonic or ultraviolet rays are used to remove or decompose organic or inorganic substances formed on the glass substrate or the substrate.

1A to 1D are cross-sectional views illustrating a conventional first technology, and illustrate a cross-sectional view of a manufacturing process of a BCE liquid crystal display.

Referring to FIG. 1A, after the first conductive layer is formed on the insulating substrate 100 cleaned by the cleaning process, the first conductive layer is patterned by a photolithography process to form the gate electrode 11. Subsequently, after deposition is performed on the entire exposed substrate, the first insulating layer 12, the semiconductor layer, and the doped semiconductor layer are successively formed. Next, the doped semiconductor layer is patterned by a photolithography process to form an ohmic contact layer 14. Subsequently, the active layer 13 is formed by etching the semiconductor layer at the bottom thereof using the ohmic contact layer 14 as a mask.

Referring to FIG. 1B, after the deposition pretreatment is performed on the entire surface of the exposed substrate, a second conductive layer 15L for forming the source / drain electrodes is formed.

Referring to FIG. 1C, the second conductive layer is patterned by a photolithography process to form a source electrode 15S and a drain electrode 15D. Subsequently, the ohmic contact layer 14 at the bottom thereof is etched using the source electrode 15S and the drain electrode 15D as a mask, and the ohmic contact layer positioned between the source electrode 15S and the drain electrode 15D ( 14) Remove the part.

Referring to FIG. 1D, after the deposition pretreatment is performed on the exposed substrate, the second insulating layer 16 is formed. Subsequently, the second insulating film is patterned by a photolithography process to form a contact hole H exposing a part of the drain electrode 15D. Subsequently, after the deposition pre-cleaning is performed on the entire surface of the exposed substrate, a transparent conductive layer is formed, and the transparent conductive layer is patterned by a photolithography process to form the pixel electrode 17.

2A to 2D are diagrams for explaining a second technology, which is a cross-sectional view of a manufacturing process of an ES (Etch Sopper) type liquid crystal display device.

Referring to FIG. 2A, after forming a first conductive layer on the insulating substrate 200 cleaned by the cleaning process, the first conductive layer is patterned by a photolithography process to form the gate electrode 21. Subsequently, after pre-depo cleaning is performed on the entire exposed substrate, the first insulating film 22, the semiconductor layer 23 L and the silicon nitride film are successively formed. Next, the silicon nitride film is patterned by a photolithography process to form an etch stopper 29.

Referring to FIG. 2B, pre-deposition cleaning is performed on the entire surface of the exposed substrate to form a doped semiconductor layer. Thereafter, the doped semiconductor layer is patterned by a photolithography process to form an ohmic contact layer 24, and then the semiconductor layer at the bottom thereof is etched using the ohmic contact layer 24 as a mask to form an active layer 23. To form.

Referring to FIG. 2C, after the deposition pretreatment is performed on the entire surface of the exposed substrate, a second conductive layer 25 L for forming the source / drain electrodes is formed.

Referring to FIG. 2D, the second conductive layer 25 L is patterned by a photolithography process to form a source electrode 25S and a drain electrode 25D. Subsequently, the ohmic contact layer at the bottom thereof is etched using the source electrode 25S and the drain electrode 25D as a mask to remove a portion of the ohmic contact layer positioned between the source electrode 25S and the drain electrode 25D. .

Referring to FIG. 2E, after the deposition pretreatment is performed on the entire exposed substrate, the second insulating layer 26 is formed. Subsequently, the second insulating layer 26 is patterned by a photolithography process to form a contact hole H exposing a part of the drain electrode 25D. Subsequently, after the deposition pre-cleaning is performed on the entire surface of the exposed substrate, a transparent conductive layer is formed, and the transparent conductive layer is patterned by a photolithography process to form a pixel electrode 27.

In the above-described conventional techniques, an ohmic contact layer including a doped semiconductor layer is formed, a deposition pretreatment is performed on a substrate, and a second conductive layer for forming a source / drain electrode is formed on the ohmic contact layer. Form. However, since the process of forming the ohmic contact layer and the conducting material deposition process for forming the second conductive layer are performed in separate chambers, the vacuum processing conditions are broken during the process of transporting the substrate. Exposed. As a result, a natural oxide film is formed on the surface of the ohmic contact layer, thereby increasing the size of contact resistance at the boundary between the source / drain electrodes formed of the ohmic contact layer and the second conductive layer. In addition, as shown in FIG. 3, the foreign material 40 is positioned on the substrate during the transport of the substrate in the process of forming the second conductive layer 35L or at the top of the ohmic contact layer 34 during the cleaning process. In the process of photoetching the second conductive layer 35L, a misalignment is caused to cause open or disconnection of the source electrode 35S or the signal line 35L.

According to the present invention, a process of forming a doped semiconductor layer for forming an ohmic contact layer and a process of forming a conductive layer for forming a source / drain electrode are continuously performed under conditions that do not break a vacuum, thereby providing an ohmic contact layer and a source. It is an object of the present invention to provide a liquid crystal display device and a method of manufacturing the same to prevent a natural oxide film from being formed at a boundary between a drain electrode and a foreign material.

In addition, a process of forming a doped semiconductor layer for forming an ohmic contact layer and a process of forming a conductive layer for forming a source / drain electrode are successively performed, and the conductive layer is patterned to form a source / drain electrode. After that, the doped semiconductor layer is etched using the source / drain electrodes as a mask to form an ohmic contact layer, thereby eliminating the pre-deposition cleaning operation for forming the conductive layer and separating the ohmic contact layer portion at the upper end of the channel region. It is to provide a liquid crystal display device and a method of manufacturing the simplified manufacturing process.

In addition, the present invention provides a method of manufacturing the liquid crystal display device, by connecting the chamber for forming the doped semiconductor layer and the chamber for forming the conductive layer in a vacuum state, so that the vacuum conditions are not broken. An object of the present invention is to provide an LCD manufacturing apparatus capable of performing the processes.

According to an embodiment of the present invention, a scan line extending in a first direction on a insulating substrate, a signal line extending in a second direction crossing the first direction, and a gate electrode positioned at an intersection of the signal line and the scan line, and extending on the scan line And a thin film transistor including a source electrode extending over the signal line, a drain electrode corresponding to the source electrode, an active layer overlapping the gate electrode and connected to the source electrode and the drain electrode, and a drain electrode of the thin film transistor. The liquid crystal display device comprising a pixel electrode connected to the liquid crystal display device, wherein the active layer is formed to overlap the signal line, the source electrode, the drain electrode, and the gate electrode.

The present invention provides a process for forming a scan line and a gate electrode extending in the scan line on an insulating substrate, a step of sequentially forming a first insulating film, a doped semiconductor layer, and a conductive layer covering the scan line and the gate electrode; Forming a ohmic contact layer by performing a photolithography process to form a signal line, a source electrode, and a drain electrode; and an etching process using the signal line, a source electrode, and a drain electrode as a mask on the doped semiconductor layer; Forming an active layer by performing a photolithography process on the semiconductor layer, forming a second insulating layer covering the entire surface of the exposed substrate and exposing a part of the drain electrode, and a pixel connected to the drain electrode; It is a manufacturing method of a liquid crystal display device including the process of forming an electrode. In this case, the present invention is characterized in that after forming the doped semiconductor layer, the conductive layer is formed in a vacuum state.

The present invention provides a process of forming a scan line and a gate electrode extending in the scan line on an insulating substrate, sequentially forming a first insulating film, a semiconductor layer, a doped semiconductor layer, and a conductive layer covering the scan line and the gate electrode; A photolithography process is performed on the conductive layer to form a signal line, a source electrode, and a drain electrode, and an etch process using the signal line, the source electrode, and a drain electrode as a mask is performed on the doped semiconductor layer to form an ohmic contact layer. Forming an active layer by performing a photolithography process on the semiconductor layer, forming a second insulating film covering the entire surface of the exposed substrate and exposing a part of the drain electrode; In the liquid crystal display device manufacturing equipment for proceeding the manufacturing process of the liquid crystal display device comprising the step of forming a pixel electrode connected to Characterized in that for connecting the second chamber for forming the conductive layer and the first chamber for forming the doped semiconductor layer in a vacuum state.

1A through 1D are cross-sectional views of a manufacturing process of a liquid crystal display device according to a conventional first technique.

2A through 2E are cross-sectional views of a manufacturing process of a liquid crystal display device according to a second conventional technology.

3 is a view for explaining the problems of the prior art.

4A through 4D are cross-sectional views illustrating a manufacturing process of a liquid crystal display device according to a first embodiment of the present invention.

5A through 5E are cross-sectional views of a manufacturing process of a liquid crystal display according to a second exemplary embodiment of the present invention.

6 is a plan view of a liquid crystal display according to the present invention.

7A and 7B are schematic views for explaining a vacuum connection state of a chamber in a liquid crystal display manufacturing apparatus according to the present invention.

4A through 4D are cross-sectional views illustrating a manufacturing process of a back channel etching (BCE) type liquid crystal display device in order to explain a first embodiment of the manufacturing process of the liquid crystal display device according to the present invention. The manufacturing process of this invention is demonstrated with reference to FIG.

Referring to FIG. 4A, after the first conductive layer is formed on the insulating substrate 400 cleaned by the cleaning process, the first conductive layer is patterned by a photolithography process to form the gate electrode 41. Subsequently, after the pre-depo cleaning is performed on the entire surface of the exposed substrate, the first insulating film 42, the semiconductor layer 43L, and the doped semiconductor layer 44L are successively formed (hereinafter, referred to as "A" process). Is called). The formation of these layers takes place in a PECVD chamber, so that vacuum is maintained during the process.

Subsequently, the substrate under process is moved to a sputtering chamber under conditions that do not break the vacuum state, which is the process environment in which the deposition process was performed, and a second conductive layer 45L is formed by depositing a conductive material in the sputtering chamber (hereinafter referred to as " B "process).

As mentioned, the " A " process and the " B " process are carried out in vacuum in separate chambers that satisfy different preconditions. However, when the two chambers are connected in a vacuum state as described above, the "A" process and the "B" process may be continuously performed while maintaining the vacuum. Therefore, when forming the doped semiconductor layer 44L and the second conductive layer 45L, it is possible to prevent the formation of a natural oxide film between two layers caused by exposure to the outside due to the change of the chamber and the chamber.

In this case, as shown in FIG. 7A, the "A" chamber (CHAMBER A) for the "A" process and the "B" chamber (CHAMBER B) for the "B" process are inlined while maintaining a vacuum condition. -line) method, process "A" in "A" chamber (CHAMBER A), transfer substrate to "B" chamber (CHAMBER B) under vacuum, and proceed with process "B". have. Therefore, the "A" process and the "B" process can proceed continuously in a vacuum state. In addition, as shown in FIG. 7B, the chambers for the "A" process and the "B" process, for example, the "A" chamber (CHAMBER A) and the "B" chamber (CHAMBER B) and the load unit (LOAD) and By arranging the unload unit UNLOAD in a cluster manner, by making the internal spaces connecting these chambers into a vacuum state, the "A" process and the "B" process can be continuously performed in a vacuum state.

Referring to FIG. 4B, the second conductive layer is patterned by a photolithography process to form a signal line 45L, a source electrode 45S, and a drain electrode 45D. Next, the ohmic contact layer 44 is formed by etching the doped semiconductor layer at the bottom using the signal line 45L, the source electrode 45S and the drain electrode 45D as a mask. In this case, the conventional liquid crystal display device manufacturing method performed a separate etching process to remove the ohmic contact layer located on the upper end of the channel region, in the present invention, the ohmic contact layer 44 is separated in one etching process. You can run the job. Therefore, the etching process can be reduced by one step.

Referring to FIG. 4C, the exposed semiconductor layer is patterned by a photolithography process to form an active layer 43. At this time, the active layer 43 is patterned such that the channel region, which is a portion corresponding to the source electrode 45S and the drain electrode 45D, remains as shown in the plan view shown in FIG. 6. At this time, the portion overlapping the signal line 45L, the source electrode 45S and the drain electrode 45D also remains in the active layer 43.

Referring to FIG. 4D, after the deposition pre-cleaning is performed on the exposed substrate, the second insulating layer 46 is formed. Subsequently, the second insulating film is patterned by a photolithography process to form a contact hole H exposing a part of the drain electrode 45D. Subsequently, after the deposition pretreatment is performed on the entire surface of the exposed substrate, a transparent conductive layer is formed, and the transparent conductive layer is patterned by a photolithography process to form the pixel electrode 47.

5A to 5E illustrate a second embodiment of the manufacturing process of the liquid crystal display according to the present invention. The manufacturing process of this invention is demonstrated with reference to FIG.

Referring to FIG. 5A, after forming a first conductive layer on the insulating substrate 500 cleaned by the cleaning process, the first conductive layer is patterned by a photolithography process to form the gate electrode 51. Subsequently, after pre-depo cleaning is performed on the entire surface of the exposed substrate, the first insulating film 52, the semiconductor layer 53L and the second insulating film are successively formed. Subsequently, the second insulating film is patterned by a photolithography process to form an etch stopper 59.

Referring to FIG. 5B, after pre-deposition cleaning is performed on the entire surface of the exposed substrate, a doped semiconductor layer 54 L is formed (hereinafter referred to as “A” process). The formation of the doped semiconductor layer takes place in the PECVD chamber, so that vacuum is maintained during the process.

Subsequently, the substrate being processed is moved to a sputtering chamber under conditions that do not break the vacuum state, which is the process environment in which the deposition process has been performed, and the second conductive layer 55L is deposited by depositing a conductive material in the sputtering chamber (hereinafter, referred to as ""). B "process or below).

As mentioned, the " A " process and the " B " process are carried out in vacuum in separate chambers that satisfy different preconditions. However, when the two chambers are connected in a vacuum state as described above, the "A" process and the "B" process may be continuously performed while maintaining the vacuum. Therefore, when forming the doped semiconductor layer 54L and the second conductive layer 55L, it is possible to prevent the formation of a natural oxide film between the two layers caused by exposure to the outside due to the change of the chamber and the chamber.

Since the construction of the manufacturing equipment for the "A" process and the "B" process has already been mentioned in the first embodiment of the present invention, the description thereof is omitted.

Referring to FIG. 5C, the second conductive layer is patterned by a photolithography process to form a signal line 55L, a source electrode 55S, and a drain electrode 55D, and then the signal line 55L and the source electrode 55S. The ohmic contact layer 54 is formed by etching the doped semiconductor layer at the bottom thereof using the drain electrode 55D as a mask. At this time, the portion of the ohmic contact layer positioned between the source electrode 55S and the drain electrode 55D is also removed, and damage to the semiconductor layer can be prevented due to the presence of the etch stopper 59. In this case, the conventional liquid crystal display device manufacturing method performs a separate etching process to remove the ohmic contact layer portion located on the upper end of the channel region, but as mentioned in this embodiment, the ohmic contact in one etching process Separation of layers can be performed. Therefore, the etching process can be reduced by one step.

Referring to FIG. 5D, the exposed semiconductor layer is patterned by a photolithography process to form an active layer 53. At this time, the active layer 53 is patterned such that the channel region, which is a portion corresponding to the source electrode 55S and the drain electrode 55D, remains as shown in the plan view shown in FIG. 6. At this time, the portion overlapping the signal line 55L, the source electrode 55S and the drain electrode 55D also remains in the active layer 53.

Referring to FIG. 5E, after the deposition pre-cleaning is performed on the exposed substrate, the second insulating layer 56 is formed. Subsequently, the second insulating film is patterned by a photolithography process to form a contact hole H exposing a part of the drain electrode 55D. Subsequently, after the deposition pre-cleaning is performed on the entire surface of the exposed substrate, a transparent conductive layer is formed, and the transparent conductive layer is patterned by a photolithography process to form a pixel electrode 57.

6 is a plan view of a liquid crystal display device implemented according to the present invention described above.

As can be seen from the drawing, the signal line 65L extending in the first direction and the scanning line 61L extending in the second direction cross the insulating substrate (not shown) to form a pixel. The gate line 61G extends and protrudes from the scan line 61L, and the source electrode 65S protrudes from the signal line 65L. Further, the drain electrode 65D is formed corresponding to the source electrode 65S. The active layer 63 has a portion of the channel region overlapping the gate electrode 65G and the source / drain electrodes 65S and 65D, and as can be seen from the manufacturing process, the signal line 65L and the source / drain electrode Since the semiconductor layer located at the lower end after the formation of the (65S) and the 65D is formed by a photolithography process, a pattern is also formed along these. And the pixel electrode 67 connected to the drain electrode 65D is formed in the whole part of a pixel.

In the present invention, a process for forming a semiconductor layer for an ohmic contact layer and a process for forming a conductive layer for a source / drain are continuously performed in a vacuum. Therefore, by changing the chamber, the substrate is exposed to the outside, thereby preventing the formation of a natural oxide film formed at the boundary between the ohmic contact layer and the source / drain electrodes, thereby reducing the contact resistance between the ohmic contact layer and the conductive layer. It is possible to omit the pre-deposition cleaning work carried out before the formation process. In addition, a separate etching process for removing the ohmic contact layer portion of the upper portion of the channel region may be omitted.

Claims (12)

A scan line extending in a first direction on the insulating substrate, a signal line extending in a second direction crossing the first direction, a gate electrode positioned at an intersection of the signal line and the scan line and extending to the scan line; A thin film transistor including a source electrode extending to a signal line, a drain electrode corresponding to the source electrode, an active layer overlapping the gate electrode and connected to the source electrode and the drain electrode, and connected to the drain electrode of the thin film transistor. In a liquid crystal display device comprising a pixel electrode, And the active layer is formed to overlap the signal line, the source electrode, the drain electrode, and the gate electrode. The method according to claim 1, And an ohmic contact layer is formed at a portion where the signal line, the source electrode, the drain electrode, and the active layer contact each other. The method according to claim 1 or 2, And an etch stopper disposed above the active layer and formed above the gate electrode. Forming a scan line on the insulating substrate and a gate electrode extending on the scan line; Sequentially forming a first insulating film, a semiconductor layer, a doped semiconductor layer, and a conductive layer covering the scan line and the gate electrode; Performing a photolithography process on the conductive layer to form a signal line, a source electrode and a drain electrode; Forming an ohmic contact layer by performing an etching process using the signal line, a source electrode, and a drain electrode as a mask on the doped semiconductor layer; Performing a photolithography process on the semiconductor layer to form an active layer; Forming a second insulating film covering the entire surface of the exposed substrate and exposing a part of the drain electrode; And forming a pixel electrode connected to the drain electrode. The method according to claim 4, And forming a etch stopper on the first insulating film. The method according to claim 4 or 5, And after forming the doped semiconductor layer, forming the conductive layer in a vacuum state. The method according to claim 4 or 5, And forming the semiconductor layer such that the active layer overlaps the signal line, the source electrode, the drain electrode, and the gate electrode. The method according to claim 4 or 5, And the active layer is an amorphous silicon layer. Forming a scan line and a gate electrode extending on the scan line in the insulating substrate, sequentially forming a first insulating film, a semiconductor layer, a doped semiconductor layer, and a conductive layer covering the scan line and the gate electrode; Forming a ohmic contact layer by performing a photolithography process to form a signal line, a source electrode, and a drain electrode; and an etching process using the signal line, a source electrode, and a drain electrode as a mask on the doped semiconductor layer; Forming an active layer by performing a photolithography process on the semiconductor layer, forming a second insulating layer covering the entire surface of the exposed substrate and exposing a part of the drain electrode, and a pixel connected to the drain electrode; In the liquid crystal display manufacturing apparatus for proceeding the manufacturing process of the liquid crystal display device comprising the step of forming an electrode, And a first chamber for forming the doped semiconductor layer and a second chamber for forming the conductive layer in a vacuum state. The method according to claim 9, And the first chamber and the second chamber are connected in an in-line manner. The method according to claim 9, And connecting the first chamber and the second chamber in a cluster manner. The method according to claim 9, And the first insulating film, the semiconductor layer, and the doped semiconductor layer are successively formed in the first chamber.