KR19990019774A - High dielectric constant ceramic composition - Google Patents
High dielectric constant ceramic composition Download PDFInfo
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- KR19990019774A KR19990019774A KR1019970043211A KR19970043211A KR19990019774A KR 19990019774 A KR19990019774 A KR 19990019774A KR 1019970043211 A KR1019970043211 A KR 1019970043211A KR 19970043211 A KR19970043211 A KR 19970043211A KR 19990019774 A KR19990019774 A KR 19990019774A
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- 239000000203 mixture Substances 0.000 title claims abstract description 19
- 239000000919 ceramic Substances 0.000 title claims abstract description 15
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims abstract description 22
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 11
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims abstract description 11
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 11
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000470 constituent Substances 0.000 claims 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 abstract description 16
- 238000009413 insulation Methods 0.000 abstract description 13
- 238000005245 sintering Methods 0.000 abstract description 12
- 239000003985 ceramic capacitor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 6
- -1 0.10 mol% Chemical compound 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/0302—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity characterised by unspecified or heterogeneous hardness or specially adapted for magnetic hardness transitions
- H01F1/0311—Compounds
- H01F1/0313—Oxidic compounds
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/016—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on manganites
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
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Abstract
본 발명은 티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.20∼1.30mol%, 산화셀륨(CeO2) 0.20∼0.30mol%, 산화코발트(Co3O4) 0.10∼0.30mol%, 산화망간(MnO2) 0.05∼0.10mol%, 산화안티모니(Sb2O3) 0.10∼0.20mol%, 산화구리(CuO) 0.10∼0.50mol%를 기본조성물로 갖는 고유전율계 자기 조성물에 관한 것으로서, 상기 고유전율 자기 조성물의 유전율이 3,800이상, 절연저항이 1013Ω㎝이상이고, 1,250℃ 이하의 온도에서 소결이 가능하며, -55℃∼125℃의 온도 범위 내에서 용량변화량이 ±15% 이하인 EIA(Electronic Industry Association) 규격의 X7R 온도특성을 만족하여, MLCC(Multi-Layer Ceramic Capacitor)의 재료로 사용되는 고유전율계 자기 조성물에 관한 것이다.100 mol% of barium titanate (BaTiO 3 ), 1.20 to 1.30 mol% of neodymium oxide (Nb 2 O 5 ), 0.20 to 0.30 mol% of cerium oxide (CeO 2 ), 0.10 to 0.30 of cobalt oxide (Co 3 O 4 ) High dielectric constant magnetic composition having mol%, manganese oxide (MnO 2 ) 0.05-0.10 mol%, antimony oxide (Sb 2 O 3 ) 0.10-0.20 mol%, and copper oxide (CuO) 0.10-0.50 mol% as a basic composition The dielectric constant of the high-k dielectric ceramic composition is more than 3,800, the insulation resistance is 10 13 Ωcm or more, sintering is possible at a temperature of 1,250 ℃ or less, the capacity change within the temperature range of -55 ℃ to 125 ℃ The present invention relates to a high dielectric constant ceramic composition used as a material for a multi-layer ceramic capacitor (MLCC) that satisfies the X7R temperature characteristic of the Electronic Industry Association (EIA) standard of ± 15% or less.
Description
본 발명은 고유전율계 자기 조성물에 관한 것으로서, 특히 MLCC(Multi-Layer Ceramic Capacitor)의 재료로 사용되는 고유전율계 자기 조성물에 관한 것이다.The present invention relates to a high dielectric constant ceramic composition, and more particularly, to a high dielectric constant ceramic composition used as a material of a multi-layer ceramic capacitor (MLCC).
상기 고유전율계 자기 조성물이라 함은 -55℃∼125℃의 온도 범위 내에서 용량변화량이 ±15% 이하인 EIA(Electronic Industry Association) 규격의 X7R 특성을 만족시키는 물질이다.The high dielectric constant ceramic composition is a material that satisfies the X7R characteristic of the EIA (Electronic Industry Association) standard having a capacity change of ± 15% or less within a temperature range of -55 ° C to 125 ° C.
종래의 고유전율계 자기 조성물이라 함은 티탄산바륨(BaTiO3)과 산화네오븀(Nb2O5)에 티탄산칼슘(CaTiO3), 산화니켈(NiO3), 산화코발트(CoO), 산화마그네슘(MgO), 산화비스무스(Bi2O3), 산화셀륨(CeO2), 산화주석(MnO2), 산화아연(ZnO)등이 첨가되어 조성되었다.Conventional high dielectric constant ceramic compositions include barium titanate (BaTiO 3 ) and neodymium oxide (Nb 2 O 5 ), calcium titanate (CaTiO 3 ), nickel oxide (NiO 3 ), cobalt oxide (CoO), and magnesium oxide ( MgO), bismuth oxide (Bi 2 O 3 ), cerium oxide (CeO 2 ), tin oxide (MnO 2 ), zinc oxide (ZnO) and the like were added and formed.
그러나 상기와 같이 조성된 종래의 고유전율계 자기 조성물은 소결성 및 유전율의 온도 안정성이 우수한 반면, 1,300℃이상의 높은 소결온도를 갖고, 절연저항이1011㎝ 정도로 낮으며, 고온에서 팔라듐(Pd) 전극과 반응하여 사용되기 어려워지는 문제점이 있었다.However, while the conventional high dielectric constant magnetic composition prepared as described above has excellent sinterability and temperature stability of dielectric constant, has a high sintering temperature of 1,300 ° C. or higher, insulation resistance is as low as 10 11 cm, and a palladium (Pd) electrode at high temperature. There was a problem that becomes difficult to use in response to.
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 유전율이 3,800 이상, 1,240℃ 이하의 온도에서 소결이 가능하고, 절연저항이 1013Ω㎝이상이며, EIA(Electronic Industry Association) 규격의 X7R 온도특성을 만족하는 고유전율계 자기 조성물을 제조함에 그 목적이 있다.The present invention has been made to solve the problems described above, the dielectric constant is 3,800 or more, sintering is possible at a temperature of 1,240 ℃ or less, the insulation resistance is 10 13 Ωcm or more, EIA (Electronic Industry Association) standard The purpose is to prepare a high-k dielectric ceramic composition that satisfies the X7R temperature characteristic.
본 발명은 티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.20∼1.30mol%, 산화셀륨(CeO2) 0.20∼0.30mol%, 산화코발트(Co3O4) 0.10∼0.30mol%, 산화망간(MnO2) 0.05∼0.10mol%, 산화안티모니(Sb2O3) 0.10∼0.20mol%, 산화구리(CuO) 0.10∼0.50mol%로 조성된 고유전율계 자기 조성물에 관한 것이다.100 mol% of barium titanate (BaTiO 3 ), 1.20 to 1.30 mol% of neodymium oxide (Nb 2 O 5 ), 0.20 to 0.30 mol% of cerium oxide (CeO 2 ), 0.10 to 0.30 of cobalt oxide (Co 3 O 4 ) High dielectric constant magnetic composition composed of mol%, manganese oxide (MnO 2 ) 0.05-0.10 mol%, antimony oxide (Sb 2 O 3 ) 0.10-0.20 mol%, and copper oxide (CuO) 0.10-0.50 mol% will be.
산화네오븀(Nb2O5)은 결정립의 성장을 제한하여 미세한 결정립을 형성시키고, 산화셀륨(CeO2)은 액상을 형성하여 치밀한 조직을 갖게 하며, 산화코발트(Co3O4)와 산화망간(MnO2)는 소량이 첨가되어 온도특성과 절연저항 등의 전기특성을 변화시키고, 산화안티모니(Sb2O3)와 산화구리(CuO)는 소결온도를 낮추는 역할을 한다.Nebium oxide (Nb 2 O 5 ) restricts the growth of grains to form fine grains, and cerium oxide (CeO 2 ) forms a liquid phase to have a dense structure, cobalt oxide (Co 3 O 4 ) and manganese oxide A small amount of (MnO 2 ) is added to change electrical properties such as temperature characteristics and insulation resistance, and antimony oxide (Sb 2 O 3 ) and copper oxide (CuO) serve to lower the sintering temperature.
표1을 참조하여 본 발명의 실시예를 설명하면 다음과 같다. 티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.20∼1.30mol%, 산화셀륨(CeO2) 0.20∼0.30mol%, 산화코발트(Co3O4) 0.10∼0.30mol%, 산화망간(MnO2) 0.05∼0.10mol%, 산화안티모니(Sb2O3) 0.10∼0.20mol%, 산화구리(CuO) 0.10∼0.50mol%을 평량하여 혼합시키고, 100℃에서 건조시킨다. 건조된 혼합분말을 압력을 가하여 성형시키고, 1,220∼1,240℃의 소결온도 범위내에서 소결시킨다. 소결된 소체에 은(Ag) 전극을 도포하여 소부한다. 이와같이 전극이 부착된 시편의 유전율, 유전손실, 절연저항, 유전율의 온도특성(TCC)를 측정한 결과 유전율은 25℃에서 3,860∼4,430, 유전손실은 25℃에서 0.8∼1.4, 절연저항은 1×1013∼2×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 -0∼+4%와 -12∼-4%인특성을 나타냈다.Referring to Table 1, an embodiment of the present invention will be described. 100 mol% of barium titanate (BaTiO 3 ), 1.20 to 1.30 mol% of neodybium oxide (Nb 2 O 5 ), 0.20 to 0.30 mol% of cerium oxide (CeO 2 ), 0.10 to 0.30 mol% of cobalt oxide (Co 3 O 4 ), 0.05 to 0.10 mol% of manganese oxide (MnO 2 ), 0.10 to 0.20 mol% of antimony oxide (Sb 2 O 3 ), and 0.10 to 0.50 mol% of copper oxide (CuO) are weighed and mixed, followed by drying at 100 ° C. The dried mixed powder is molded by applying pressure and sintered within a sintering temperature range of 1,220 to 1,240 ° C. A silver (Ag) electrode is applied to the sintered body and baked. As a result of measuring the dielectric constant, dielectric loss, insulation resistance, and temperature characteristic of the dielectric constant (TCC) of the specimen with electrode, the dielectric constant was 3860 ~ 4,430 at 25 ℃, 0.8 ~ 1.4 at 25 ℃, and insulation resistance was 1 ×. The temperature characteristics (TCC) of 10 13 to 2 × 10 13 Ωcm and dielectric constant were -0 to + 4% and -12 to -4% at -55 ° C and 125 ° C, respectively.
실시예 1Example 1
티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.20mol%, 산화셀륨(CeO2) 0.20mol%, 산화코발트(Co3O4) 0.10mol%, 산화망간(MnO2) 0.05mol%, 산화안티모니(Sb2O3) 0.10mol%, 산화구리(CuO) 0.40mol%를 구성성분으로 갖는 고유전율계 자기 조성물을 소결온도 1,220℃에서 상기의 방법으로 제조한 결과 유전율은 25℃에서 4,200, 유전손실은 25℃에서 1.2, 절연저항은 1×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 -3%와 -10%인 특성을 나타냈다.100 mol% barium titanate (BaTiO 3 ), 1.20 mol% neodymium oxide (Nb 2 O 5 ), 0.20 mol% celium oxide (CeO 2 ), 0.10 mol% cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ) A dielectric constant of 0.05 mol%, antimony oxide (Sb 2 O 3 ), 0.10 mol%, and copper oxide (CuO) 0.40 mol% was prepared by the above method at the sintering temperature of 1,220 ° C. 4,200 at 25 ℃, dielectric loss at 1.2, 1.2, insulation resistance 1 × 10 13 Ω㎝, and the temperature characteristic (TCC) of dielectric constant were -3% and -10% at -55 ℃ and 125 ℃, respectively. .
실시예 2Example 2
티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.20mol%, 산화셀륨(CeO2) 0.20mol%, 산화코발트(Co3O4) 0.15mol%, 산화망간(MnO2) 0.05mol%, 산화안티모니(Sb2O3) 0.20mol%, 산화구리(CuO) 0.30mol%를 구성성분으로 갖는 고유전율계 자기 조성물을 소결온도 1,220℃에서 상기의 방법으로 제조한 결과 유전율은 25℃에서 4,430, 유전손실은 25℃에서 1.4, 절연저항은 1×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 -4%와 -12%인 특성을 나타냈다.100 mol% barium titanate (BaTiO 3 ), 1.20 mol% neodymium oxide (Nb 2 O 5 ), 0.20 mol% celium oxide (CeO 2 ), 0.15 mol% cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ) The dielectric constant of 0.05 mol%, antimony oxide (Sb 2 O 3 ), 0.20 mol%, and copper oxide (CuO) as a component of the high dielectric constant ceramic composition was prepared by the above method at the sintering temperature of 1,220 ° C. The dielectric loss was 4,430 at 25 ℃, 1.4 at 25 ℃, insulation resistance was 1 × 10 13 Ω㎝, and the temperature characteristic (TCC) of dielectric constant was -4% and -12% at -55 ℃ and 125 ℃, respectively. .
실시예 3Example 3
티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.20mol%, 산화셀륨(CeO2) 0.30mol%, 산화코발트(Co3O4) 0.20mol%, 산화망간(MnO2) 0.05mol%, 산화안티모니(Sb2O3) 0.20mol%, 산화구리(CuO) 0.30mol%를 구성성분으로 갖는 고유전율계 자기 조성물을 소결온도 1,220℃에서 상기의 방법으로 제조한 결과 유전율은 25℃에서 4,250, 유전손실은 25℃에서 1.1, 절연저항은 1×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 +4%와 -10%인 특성을 나타냈다.100 mol% barium titanate (BaTiO 3 ), 1.20 mol% neodymium oxide (Nb 2 O 5 ), 0.30 mol% cerium oxide (CeO 2 ), 0.20 mol% cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ) The dielectric constant of 0.05 mol%, antimony oxide (Sb 2 O 3 ), 0.20 mol%, and copper oxide (CuO) as a component of the high dielectric constant ceramic composition was prepared by the above method at the sintering temperature of 1,220 ° C. 4250 at 25 ℃, dielectric loss at 1.1 at 25 ℃, insulation resistance at 1 × 10 13 Ω㎝, temperature characteristic of dielectric constant (TCC) at + 55% and 125 ℃ at + 55% and -10%, respectively. .
실시예 4Example 4
티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.30mol%, 산화셀륨(CeO2) 0.20mol%, 산화코발트(Co3O4) 0.10mol%, 산화망간(MnO2) 0.10mol%, 산화안티모니(Sb2O3) 0.10mol%, 산화구리(CuO) 0.10mol%를 구성성분으로 갖는 고유전율계 자기 조성물을 소결온도 1,240℃에서 상기의 방법으로 제조한 결과 유전율은 25℃에서 3,860, 유전손실은 25℃에서 0.8, 절연저항은 2×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 +3%와 -8%인 특성을 나타냈다.100 mol% barium titanate (BaTiO 3 ), 1.30 mol% neodymium oxide (Nb 2 O 5 ), 0.20 mol% cerium oxide (CeO 2 ), 0.10 mol% cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ) The dielectric constant of 0.10 mol%, antimony oxide (Sb 2 O 3 ), 0.10 mol% and 0.10 mol% of copper oxide (CuO) as a component was prepared by the above method at the sintering temperature of 1,240 ° C. The dielectric loss was 3,860 at 25 ℃, 0.8 at 25 ℃, insulation resistance was 2 × 10 13 Ω㎝, and the temperature characteristic of dielectric constant (TCC) was + 3% and -8% at -55 ℃ and 125 ℃, respectively. .
실시예 5Example 5
티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.30mol%, 산화셀륨(CeO2) 0.20mol%, 산화코발트(Co3O4) 0.20mol%, 산화망간(MnO2) 0.10mol%, 산화안티모니(Sb2O3) 0.10mol%, 산화구리(CuO) 0.30mol%를 구성성분으로 갖는 고유전율계 자기 조성물을 소결온도 1,240℃에서 상기의 방법으로 제조한 결과 유전율은 25℃에서 3,900, 유전손실은 25℃에서 0.8, 절연저항은 2×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 -3%와 -4%인 특성을 나타냈다.100 mol% of barium titanate (BaTiO 3 ), 1.30 mol% of neobium oxide (Nb 2 O 5 ), 0.20 mol% of cerium oxide (CeO 2 ), 0.20 mol% of cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ) The dielectric constant of 0.10 mol%, antimony oxide (Sb 2 O 3 ), 0.10 mol%, and copper oxide (CuO) as a component was prepared by the above method at the sintering temperature of 1,240 ° C. The dielectric loss was 3,900 at 25 ℃, 0.8 at 25 ℃, insulation resistance was 2 × 10 13 Ω㎝, and the temperature characteristic (TCC) of dielectric constant was -3% and -4% at -55 ℃ and 125 ℃, respectively. .
실시예 6Example 6
티탄산바륨(BaTiO3)100mol%, 산화네오븀(Nb2O5) 1.30mol%, 산화셀륨(CeO2) 0.30mol%, 산화코발트(Co3O4) 0.30mol%, 산화망간(MnO2) 0.10mol%, 산화안티모니(Sb2O3) 0.10mol%, 산화구리(CuO) 0.50mol%를 구성성분으로 갖는 고유전율계 자기 조성물을 소결온도 1,240℃에서 상기의 방법으로 제조한 결과 유전율은 25℃에서 4,020, 유전손실은 25℃에서 0.9 절연저항은 1×1013Ω㎝, 유전율의 온도특성(TCC)은 -55℃와 125℃에서 각각 -6%와 -5%인 특성을 나타냈다.100 mol% barium titanate (BaTiO 3 ), 1.30 mol% neodymium oxide (Nb 2 O 5 ), 0.30 mol% cerium oxide (CeO 2 ), 0.30 mol% cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ) The dielectric constant of 0.10 mol%, antimony oxide (Sb 2 O 3 ), 0.10 mol% and copper oxide (CuO) as a component of the high dielectric constant ceramic composition was prepared at the sintering temperature of 1,240 ° C. according to the above method. The dielectric loss was 4,020 at 25 ℃, 0.9 at 25 ℃, and the insulation resistance was 1 × 10 13 Ω㎝, and the temperature characteristic (TCC) of dielectric constant was -6% and -5% at -55 ℃ and 125 ℃, respectively.
본 발명에 의한 상기 고유전율계 자기 조성물은 3,800 이상의 유전율을 갖고 1,250℃ 이하의 소결온도를 갖고있으며, 1013Ω㎝이상의 절연저항값을 갖고, -55℃∼125℃의 온도 범위 내에서 용량변화량이 ±15% 이하인 EIA(Electronic Industry Association) 규격의 X7R 온도특성을 만족하므로 고신뢰성 MLCC(Multi-Layer Ceramic Capacitor)의 제조를 가능하게 하는 효과가 있다.The high dielectric constant ceramic composition according to the present invention has a dielectric constant of 3,800 or more, a sintering temperature of 1,250 ° C or less, an insulation resistance value of 10 13 Ωcm or more, and a capacity change within a temperature range of -55 ° C to 125 ° C. It satisfies the X7R temperature characteristic of the Electronic Industry Association (EIA) standard of ± 15% or less, thereby making it possible to manufacture highly reliable multi-layer ceramic capacitors (MLCCs).
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