KR19990012513U - Low Pressure Chemical Vapor Deposition Equipment for Semiconductor Manufacturing - Google Patents
Low Pressure Chemical Vapor Deposition Equipment for Semiconductor Manufacturing Download PDFInfo
- Publication number
- KR19990012513U KR19990012513U KR2019970025615U KR19970025615U KR19990012513U KR 19990012513 U KR19990012513 U KR 19990012513U KR 2019970025615 U KR2019970025615 U KR 2019970025615U KR 19970025615 U KR19970025615 U KR 19970025615U KR 19990012513 U KR19990012513 U KR 19990012513U
- Authority
- KR
- South Korea
- Prior art keywords
- pressure
- wafer
- load lock
- lock chamber
- low pressure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 공정 튜브를 저압으로 유지하는 펌프와 공정 튜브 사이에 형성되어 개폐되므로써 공정 튜브내의 압력을 조절하는 압력밸브에서의 누압발생에 의한 웨이퍼 손상을 방지하는 로드 록실이 형성되는 반도체 제조용 저압화학 기상증착장치에 관한 것으로 종래 저압화학 기상증착장치에서와 같이 내부 튜브와 펌프 사이를 압력 밸브의 개폐만으로 조절할 때 공정시 생성되는 부산물이 압력밸브의 사이에 점진적으로 증착되어 공정 완료후 압력 밸브가 완전히 닫히지 않으므로써 누압이 발생하고 이에따라 펌프의 저압이 내부 튜브에 작용하여 웨이퍼 보우트가 이동될 때 내부 압력의 저항에 의하여 웨이퍼가 손상되는 것은 물론 압력변화에 따라 웨이퍼에 불순물이 증착되어 웨이퍼의 성능이 저하되는 문제점이 있었던 바 본 고안은 내부 튜브와 압력 밸브의 사이에 로드 록실을 형성하여 압력밸브 작동의 불량함이 감지되면 내부 튜브와 압력밸브의 사이를 차단하는 동시에 로드 록실로 연통되는 보조 압력밸브를 개방하여 내부 튜브를 대기압상태로 유지하여 웨이퍼 보우트 이동시의 웨이퍼 손상을 방지하며 불순물의 생성을 억제하여 웨이퍼의 성능을 향상시키는 잇점이 있는 반도체 제조용 저압화학 기상증착장치이다.The present invention is a low pressure chemical vapor phase for semiconductor manufacturing in which a load lock chamber is formed between a pump that maintains a process tube at a low pressure and a process tube to open and close, thereby preventing wafer damage due to pressure generation at a pressure valve that regulates the pressure in the process tube. As a conventional low pressure chemical vapor deposition apparatus, by-products generated during the process are gradually deposited between the pressure valves when the inner tube and the pump are controlled only by opening and closing of the pressure valve, so that the pressure valve is not completely closed after the completion of the process. As a result, the pressure is generated and accordingly, the low pressure of the pump acts on the inner tube, and when the wafer boat is moved, the wafer is damaged by the resistance of the internal pressure, and impurities are deposited on the wafer as the pressure changes, thereby degrading the performance of the wafer. There was a problem with the present invention If a load lock chamber is formed between the pressure valves to detect a malfunction of the pressure valve, the inner tube is kept at atmospheric pressure by opening an auxiliary pressure valve communicating with the load lock chamber while blocking the gap between the inner tube and the pressure valve. It is a low pressure chemical vapor deposition apparatus for semiconductor manufacturing that has the advantage of preventing wafer damage during boat movement and suppressing generation of impurities to improve wafer performance.
Description
본 고안은 반도체 제조용 저압화학 기상증착장치에 관한 것으로, 특히 공정 튜브를 저압으로 유지하는 펌프와 공정 튜브 사이에 형성되어 개폐되므로써 공정 튜브내의 압력을 조절하는 압력밸브에서의 누압(Leak pressure) 발생에 의한 웨이퍼 손상을 방지하는 로드 록실(Load lock room)이 형성되는 반도체 제조용 저압화학 기상증착장치에 관한 것이다.The present invention relates to a low pressure chemical vapor deposition apparatus for semiconductor manufacturing, and in particular, is formed between a pump holding a process tube at a low pressure and a process tube to open and close a leak pressure in a pressure valve that controls the pressure in the process tube. The present invention relates to a low pressure chemical vapor deposition apparatus for semiconductor manufacturing, in which a load lock room for preventing wafer damage due to the wafer is formed.
일반적으로 반도체 제조공정에서 웨이퍼를 증착하는 방법으로 저압 화학 기상증착(Low-pressure Chemical-vapor deposition)이 널리 사용되며 이러한 증착방법은 웨이퍼의 두께 및 저항의 균일성이 우수하고 저온 및 저압공정으로 반응로와 웨이퍼로부터의 자동 도핑이 감소가 가능하며 다량으로 웨이퍼를 적재하여 증착할 수 있는 장점이 있어 널리 사용되고 있다.Generally, low-pressure chemical vapor deposition is widely used as a method of depositing a wafer in a semiconductor manufacturing process, and the deposition method has excellent uniformity of thickness and resistance of the wafer and reacts with low temperature and low pressure processes. The automatic doping from the furnace and the wafer can be reduced, and the wafer can be loaded and deposited in a large amount, which is widely used.
종래의 일반적인 저압 화학기상 증착장치는, 도 1에서 도시된 바와 같이, 내·외부 튜브(3)(5)로 형성되는 공정 챔버(1)와, 상기 공정 챔버(1)의 내부튜브(3)에 다수개의 웨이퍼(7)를 적재하는 웨이퍼 보우트(9)와, 상기 공정 챔버(1)의 내부 튜브(3)에 연결되어 저압을 유지하는 펌프(11)와, 상기 펌프(11)를 공정 챔버(1)에 상호 체결하는 연결관(13)과, 상기 연결관(13)을 개폐하는 압력밸브(15)와, 상기 연결관(13)의 내측 일단에 설치되어 압력을 조절하는 자동 압력 조절기(17)와, 상기 자동 압력 조절기(17)와 공정 챔버(1)의 사이에 설치되어 부산물을 제거하는 필터(19)와, 상기 내부튜브(3)와 연결관(13) 내측에 각각 형성되어 압력을 감지하는 압력감지센서(21)(23)로 구성된다.Conventional low pressure chemical vapor deposition apparatus, as shown in Figure 1, the process chamber 1 formed of the inner and outer tubes (3) (5), and the inner tube (3) of the process chamber (1) A wafer boat 9 for loading a plurality of wafers 7 in the wafer, a pump 11 connected to the inner tube 3 of the process chamber 1 to maintain a low pressure, and the pump 11 for a process chamber (1) a connecting pipe 13 to be mutually fastened, a pressure valve 15 for opening and closing the connecting pipe 13, and an automatic pressure regulator installed on one end of the inside of the connecting pipe 13 to adjust the pressure ( 17 and a filter 19 installed between the automatic pressure regulator 17 and the process chamber 1 to remove the by-products, and formed inside the inner tube 3 and the connection pipe 13, respectively. Consists of a pressure sensor 21, 23 to detect the.
이러한 저압화학 기상증착장치에서의 웨이퍼 가공과정을 설명하면 다음과 같다.The wafer processing in the low pressure chemical vapor deposition apparatus is described below.
도 1을 참조하면 내부 튜브(3)의 내측에 웨이퍼(7)가 다 수개 적재된 웨이퍼 보우트(9)가 설치된다. 이러한 상태에서 연결관(13)으로 상기 내부 튜브(3)에 상호 체결된 펌프(11)를 작동하여 공정 챔버(1)의 내부를 저압상태로 유지한다.Referring to FIG. 1, a wafer boat 9 having a plurality of wafers 7 installed inside the inner tube 3 is installed. In this state, the pump 11 coupled to the inner tube 3 by the connecting tube 13 is operated to maintain the inside of the process chamber 1 at a low pressure state.
따라서 작업이 진행되는 동안 공정 챔버(1)의 내측에 설치된 웨이퍼(7)는 저압 상태에서 공정막을 형성하게 된다. 이때 상기 공정 챔버(1)내의 압력은 내부 튜브(3)의 일측에 형성된 압력감지센서(21)와 연결관(17) 내측에 형성된 압력감지센서(23)에 의하여 조절된다.Therefore, the wafer 7 installed inside the process chamber 1 while the operation is in progress forms a process film in a low pressure state. In this case, the pressure in the process chamber 1 is controlled by the pressure sensor 21 formed on one side of the inner tube 3 and the pressure sensor 23 formed inside the connection pipe 17.
이렇게 공정이 완료되면 공정 챔버(1)와 펌프(11)사이에 형성된 압력 밸브(15)를 닫아 펌프(11)에 의한 압력저하를 차단하는 한편 공정가스 주입관(25)을 통하여 내부 튜브(3)에 질소가스를 투입하여 대기압상태로 유지하므로써 웨이퍼 보우트(9)를 이동가능케 한 후 웨이퍼(7)를 탈거한다.When the process is completed, the pressure valve 15 formed between the process chamber 1 and the pump 11 is closed to block the pressure drop by the pump 11, while the inner tube 3 passes through the process gas injection pipe 25. The wafer boat 9 is movable by removing nitrogen from the wafer 7 by introducing nitrogen gas into the wafer) and maintaining it at atmospheric pressure.
그러나, 종래 저압화학 기상증착장치에서와 같이 내부 튜브와 펌프 사이를 압력밸브의 개폐만으로 조절할 때 공정시 생성되는 부산물이 압력밸브의 사이에 점진적으로 증착되어 공정 완료후 압력 밸브가 완전히 닫히지 않으므로써 누압이 발생하고 이에따라 펌프의 저압이 내부 튜브에 작용하여 웨이퍼 보우트가 이동될 때 내부 압력의 저항에 의하여 웨이퍼가 손상되는 것은 물론 압력변화에 따라 웨이퍼에 불순물이 증착되어 웨이퍼의 성능이 저하되는 문제점이 있었다.However, as in the conventional low pressure chemical vapor deposition apparatus, when adjusting the pressure between the inner tube and the pump by only opening and closing the pressure valve, by-products generated during the process are gradually deposited between the pressure valves, so that the pressure valve is not completely closed after the completion of the process. As a result, the low pressure of the pump acts on the inner tube, and when the wafer boat is moved, the wafer is damaged by the resistance of the internal pressure, and impurities are deposited on the wafer according to the pressure change, thereby degrading the performance of the wafer. .
본 고안의 목적은 내부 튜브와 압력 밸브의 사이에 로드 록실을 형성하여 압력밸브 작동의 불량함이 감지되면 내부 튜브와 압력밸브의 사이를 차단하는 동시에 로드 록실로 연통되는 보조 압력밸브를 개방하여 내부 튜브를 대기압상태로 유지하여 웨이퍼 보우트 이동시의 웨이퍼 손상을 방지하며 불순물의 생성을 억제하여 웨이퍼의 성능을 향상시키는 반도체 제조용 저압화학 기상증착장치를 제공하는 데 있다.The purpose of the present invention is to form a load lock chamber between the inner tube and the pressure valve, and if it is detected that the operation of the pressure valve is defective, the auxiliary pressure valve communicating with the load lock chamber is opened by cutting off the inner tube and the pressure valve. The present invention provides a low pressure chemical vapor deposition apparatus for semiconductor manufacturing that maintains a tube at atmospheric pressure to prevent wafer damage during wafer boat movement and suppresses generation of impurities to improve wafer performance.
본 고안은 상기의 목적을 달성하고자, 웨이퍼가 다 수개 적재되는 웨이퍼 보오트와, 내·외부 튜브로 형성되며 상기 웨이퍼 보오트를 내부튜브에 장입하여 증착 작업하는 공정 챔버와, 상기 공정 챔버를 저압으로 유지하는 펌프와, 압력밸브에 의해 개폐되며 상기 공정 챔버와 펌프를 상호 연결하는 연결관으로 구성되는 통상의 저압화학 기상증착장치에 있어서, 상기 공정 챔버와 압력밸브 사이에 밀폐되어 형성되는 로드 록실과, 상기 로드 록실과 압력 밸브 사이에 형성되어 로드 록실을 개폐하는 개폐문과, 상기 연결관이 로드 록실을 관통하는 소정부위의 일측에 형성되는 보조 압력밸브와, 각 부위의 압력을 감지하는 압력감지센서로 구성되는 것을 특징으로 한다.The present invention, in order to achieve the above object, a wafer boat that is loaded with a plurality of wafers, a process chamber formed by the inner and outer tubes, the wafer chamber is charged into the inner tube and deposited, and the process chamber low pressure In the conventional low pressure chemical vapor deposition apparatus composed of a pump to be maintained by the pressure valve, which is opened and closed by a pressure valve and interconnects the process chamber and the pump, the load lock is formed between the process chamber and the pressure valve is sealed An opening / closing door formed between the seal, the load lock chamber and the pressure valve to open and close the load lock chamber, an auxiliary pressure valve formed at one side of the predetermined portion through which the connecting pipe passes through the load lock chamber, and a pressure sensing sensing pressure of each part It is characterized by consisting of a sensor.
도 1은 종래의 저압화학 기상증착장치를 개략적으로 도시한 구성도이고,1 is a schematic view showing a conventional low pressure chemical vapor deposition apparatus,
도 2는 본 고안의 저압화학 기상증착장치를 개략적으로 도시한 구성도이다.Figure 2 is a schematic diagram showing a low pressure chemical vapor deposition apparatus of the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
1 : 공정 챔버3 : 내부 튜브1: process chamber 3: inner tube
5 : 외부 튜브7 : 웨이퍼5: outer tube 7: wafer
9 : 웨이퍼 보우트11 : 펌프9: wafer boat 11: pump
13 : 연결관15 : 압력밸브13 connection pipe 15 pressure valve
17 : 자동 압력 조절기19 : 필터17: automatic pressure regulator 19: filter
21, 23, 107, 109, 111, 113 : 압력감지센서21, 23, 107, 109, 111, 113: pressure sensor
100 : 로드 록실101 : 개폐문100: load lock room 101: opening and closing door
103 : 보조 압력밸브105 : 가스 유입관103: auxiliary pressure valve 105: gas inlet pipe
이하, 첨부된 도면을 참조하여 본 고안을 설명하겠다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
도 2는 본 고안의 저압화학 기상증착장치를 개략적으로 도시한 구성도이다.Figure 2 is a schematic diagram showing a low pressure chemical vapor deposition apparatus of the present invention.
웨이퍼(7)가 다 수개 적재되는 웨이퍼 보우트(9)가 내부 튜브(3)에 투입되는 공정 챔버(1)의 일측에 저압을 발생하는 펌프(11)가 연결관(13)으로 상호 연결된다.A pump 11 for generating a low pressure on one side of the process chamber 1 into which the wafer boat 9, in which a plurality of wafers 7 are loaded, is introduced into the inner tube 3 is connected to the connection pipe 13.
이러한 연결관(13)에는 압력 밸브(15)가 형성되어 펌프(11)와 공정 챔버(1)의 사이를 개폐하여 공정 챔버(1)내의 압력을 조절한다.A pressure valve 15 is formed in the connection pipe 13 to control the pressure in the process chamber 1 by opening and closing the pump 11 and the process chamber 1.
상기 압력 밸브(15)와 공정 챔버(1)의 사이에 위치하는 연결관(13)의 외주연에는 압력 밸브(15)의 이상발생시 공정 챔버(1)와 펌프(11)의 압력을 보조적으로 조절하는 로드 록실(100)이 형성된다.On the outer circumference of the connecting pipe 13 positioned between the pressure valve 15 and the process chamber 1, the pressure of the process chamber 1 and the pump 11 is auxiliaryly controlled when an abnormality occurs in the pressure valve 15. The load lock chamber 100 is formed.
이러한 로드 록실(100)에는 압력 밸브(15)와 면하는 부분에 개폐가능토록 형성된 개페문(101)이 설치되고 로드 록실(100)의 내측을 관통하는 연결관(13)의 일측에는 보조 압력 밸브(103)가 형성된다. 또한 상기 로드 록실(100)의 일측에는 질소가스를 유입하면서 압력을 조절하는 가스 유입관(105)이 형성된다.The load lock chamber 100 is provided with an opening door 101 formed so as to be openable and close to a portion facing the pressure valve 15, and an auxiliary pressure valve at one side of the connecting pipe 13 passing through the inside of the load lock chamber 100. 103 is formed. In addition, one side of the load lock chamber 100 is formed with a gas inlet pipe 105 for adjusting the pressure while introducing nitrogen gas.
상기 로드 록실(100)의 보조 압력 밸브(103)는 주요부분에 형성된 압력감지수단에 의하여 개폐된다.The auxiliary pressure valve 103 of the load lock chamber 100 is opened and closed by pressure sensing means formed in the main part.
이러한 압력감지수단은 공정 챔버(1) 내측에 설치되어 공정 챔버(1)의 압력을 측정하는 압력감지센서(109)와, 로드 록실(100)의 내측에 설치되는 압력감지센서(107) , 압력 밸브(15)에 작용하는 압력을 측정하는 압력감지센서(113) 및 공정 챔버(1) 외측의 압력을 측정하는 압력감지센서(111)로 이루어진다.The pressure sensing means is installed inside the process chamber 1, the pressure sensor 109 for measuring the pressure of the process chamber 1, the pressure sensor 107 is installed inside the load lock chamber 100, pressure It consists of a pressure sensor 113 for measuring the pressure acting on the valve 15 and a pressure sensor 111 for measuring the pressure outside the process chamber (1).
한편 상기 공정 챔버(1)와 로드 록실(100)의 사이에 위치하는 연결관(13)에는 공정시 발생하는 부산물을 제거하는 필터(19)가 형성됨은 물론이다.On the other hand, the connecting pipe 13 located between the process chamber 1 and the load lock chamber 100 is a filter 19 for removing the by-products generated during the process is a matter of course.
본 고안의 저압화학 기상증착장치에 의한 웨이퍼 가공과정을 알아보면 다음과 같다.The process of wafer processing by the low pressure chemical vapor deposition apparatus of the present invention is as follows.
도면 2를 참조하면 공정 챔버(1)의 내부 튜브(3)에 웨이퍼(7)가 설치된 웨이퍼 보우트(9)가 투입된다. 이러한 상태에서 공정 챔버(1)의 압력을 저압으로 유지하기 위하여 공정 챔버(1)의 일측에 연결된 펌프(11)를 작동시키고 상호 연결부위의 압력 밸브(15)는 개방한다.Referring to FIG. 2, a wafer boat 9 provided with a wafer 7 is introduced into the inner tube 3 of the process chamber 1. In this state, the pump 11 connected to one side of the process chamber 1 is operated to maintain the pressure of the process chamber 1 at a low pressure, and the pressure valve 15 at the interconnect portion is opened.
이렇게 공정 챔버(1)를 저압으로 유지하는 상태에서 웨이퍼(7)의 가공이 완료되면 상기 압력 밸브(15)를 닫고 내부에 질소가스를 유입하여 공정 챔버(1)내의 압력을 대기압상태로 전환한다.When the processing of the wafer 7 is completed in the state in which the process chamber 1 is maintained at a low pressure, the pressure valve 15 is closed and nitrogen gas is introduced into the inside to convert the pressure in the process chamber 1 to the atmospheric pressure state. .
이러한 상태에서 공정 챔버(1)의 내측에 설치된 압력감지센서(109)에서 측정된 압력과, 공정 챔버(1)의 외부에 설치된 압력감지센서(111)에서 측정된 외기압과의 압력을 비교하여 압력이 동일한 경우에는 웨이퍼(7)를 탈거가능토록 웨이퍼 보우트(9)를 적절한 위치에 이동시킨다.In this state, the pressure measured by the pressure sensor 109 installed inside the process chamber 1 and the pressure of the outside air pressure measured by the pressure sensor 111 installed outside the process chamber 1 are compared. When the pressure is the same, the wafer boat 9 is moved to an appropriate position so that the wafer 7 can be removed.
이때 상기 공정 챔버(1)와 외부의 압력이 일치하지 않을 경우, 즉, 펌프(11)와 공정 챔버(1)의 사이에 형성되어 펌프(11)의 저압을 차단하는 압력 밸브(15)에 공정시 생성되는 부산물이 부착되어 완전히 닫히지 않으므로써 공정이 완료된 후에도 공정 챔버(1)가 저압상태를 지속적으로 유지하는 경우에는 웨이퍼 보우트(9)의 이동시 이에 작용하는 압력에 의한 웨이퍼(7) 손상과 부산물의 생성을 방지하기 위하여 웨이퍼 보우트(9)가 움직이지 않아야 한다.At this time, when the pressure between the process chamber 1 and the external pressure does not match, that is, between the pump 11 and the process chamber 1 is formed in the pressure valve 15 to block the low pressure of the pump 11 When the process chamber 1 is kept at a low pressure even after the process is completed because the by-products generated during the process are attached and do not close completely, damage and by-products of the wafer 7 due to the pressure acting upon the movement of the wafer boat 9 are caused. The wafer boat 9 should not move in order to prevent the formation of cracks.
따라서 공정 챔버(1)의 압력감지센서(109)와 외부에 형성된 압력감지센서(111)에서 압력이 일치하지 않으면 웨이퍼 보우트(9)를 정지시키고 로드 록실(100)과 압력 밸브(15)의 사이를 차단하는 개폐문(101)을 작동시켜 펌프(11)측을 폐쇄한다.Therefore, if the pressure does not match between the pressure sensor 109 of the process chamber 1 and the pressure sensor 111 formed outside, the wafer boat 9 is stopped and the load lock chamber 100 and the pressure valve 15 are separated. Operate the opening and closing door 101 to block the closing of the pump (11) side.
이러한 상태에서 로드 록실(100)의 내측을 관통하는 연결관(13)의 일측에 형성된 보조 압력밸브(103)를 개방하여 공정 챔버(1)와 로드 록실(100)이 상호 연통되도록 형성한 후 로드 록실(100)의 일측에 형성된 가스 유입관(105)을 통하여 질소가스를 유입하여 공정 챔버(1)내의 압력을 조절한다.In this state, the auxiliary pressure valve 103 formed at one side of the connection pipe 13 penetrating the inside of the load lock chamber 100 is opened to form the process chamber 1 and the load lock chamber 100 in communication with each other. Nitrogen gas is introduced through the gas inlet pipe 105 formed at one side of the lock chamber 100 to adjust the pressure in the process chamber 1.
이렇게 펌프(11)가 차단된 상태에서 상기 로드 록실(100)을 통하여 공정 챔버(1)내의 압력이 대기압과 동일하게 조절되고 공정 챔버(1)와 로드 록실(100) 및 공정 챔버(1)의 외측에 설치된 각 압력감지센서(107)(109)(111)에 의하여 각 부분에서의 압력이 동일하게 측정되면 웨이퍼 보우트(9)를 작동시켜 웨이퍼(7)를 탈거한다.In this state in which the pump 11 is blocked, the pressure in the process chamber 1 is controlled to be equal to atmospheric pressure through the load lock chamber 100 and the process chamber 1 and the load lock chamber 100 and the process chamber 1 When the pressure in each part is equally measured by the pressure sensor 107, 109, 111 provided in the outer side, the wafer boat 9 is operated, and the wafer 7 is removed.
상기에서 상술된 바와 같이, 본 고안은 내부 튜브와 압력 밸브의 사이에 로드 록실을 형성하여 압력밸브 작동의 불량함이 감지되면 내부 튜브의 압력밸브의 사이를 차단하는 동시에 로드 록실로 연통되는 보조 압력밸브를 개방하여 내부 튜브를 대기압상태로 유지하여 웨이퍼 보우트 이동시의 웨이퍼 손상을 방지하며 불순물의 생성을 억제하여 웨이퍼의 성능을 향상시키는 잇점이 있다.As described above, the present invention forms a load lock chamber between the inner tube and the pressure valve, and when a failure of the pressure valve is detected, the auxiliary pressure communicates with the load lock chamber while blocking the pressure valve of the inner tube. The valve is opened to maintain the inner tube at atmospheric pressure to prevent wafer damage during wafer boat movement and to suppress the generation of impurities to improve wafer performance.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970025615U KR200174032Y1 (en) | 1997-09-10 | 1997-09-10 | Low pressure chemical vapor deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970025615U KR200174032Y1 (en) | 1997-09-10 | 1997-09-10 | Low pressure chemical vapor deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990012513U true KR19990012513U (en) | 1999-04-06 |
| KR200174032Y1 KR200174032Y1 (en) | 2000-03-02 |
Family
ID=19510147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970025615U KR200174032Y1 (en) | 1997-09-10 | 1997-09-10 | Low pressure chemical vapor deposition apparatus |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200174032Y1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101115222B1 (en) * | 2010-03-02 | 2012-02-14 | 주식회사 엘지실트론 | System for sensing mis-operation, Low pressure chemical vapor deposition apparatus and A method for controlling the same |
-
1997
- 1997-09-10 KR KR2019970025615U patent/KR200174032Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR200174032Y1 (en) | 2000-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100246115B1 (en) | Processing apparatus in low pressure and its method | |
| KR100267580B1 (en) | Semiconductor device fabrication apparatus, load-lock chamber and semiconductor device fabrication method of using the semiconductor device fabrication apparatus | |
| US6074202A (en) | Apparatus for manufacturing a semiconductor material | |
| US7695231B2 (en) | Vacuum pumping system, driving method thereof, apparatus having the same, and method of transferring substrate using the same | |
| JP4298025B2 (en) | Vacuum pressure control system | |
| US7165443B2 (en) | Vacuum leakage detecting device for use in semiconductor manufacturing system | |
| KR200174032Y1 (en) | Low pressure chemical vapor deposition apparatus | |
| US20070175395A1 (en) | Semiconductor device manufacturing equipment including a vacuum apparatus and a method of operating the same | |
| JP3305817B2 (en) | Semiconductor manufacturing apparatus and wafer processing method | |
| KR20060134465A (en) | Exhausting apparatus of low pressure chemical vapour deposition equipmeent | |
| KR20060085716A (en) | Slot valve for double sealing in semiconductor equipment | |
| KR970003595Y1 (en) | Plasma cvd apparatus having anti-reverse flow structure | |
| JP3137806B2 (en) | Method and apparatus for opening vacuum chamber to atmosphere | |
| KR200211271Y1 (en) | Loadlock-chamber of semiconductor fabricating device | |
| KR100631919B1 (en) | vacuum pressure system and using method there of | |
| KR20010107138A (en) | Chemical vapor deposition apparatus | |
| KR200244729Y1 (en) | Low pressure chemical vapor deposition equipment for semiconductor manufacturing | |
| KR200222594Y1 (en) | Automatic pressure control system of wafer depositor | |
| KR0166855B1 (en) | Coating apparatus of wafer passivation film | |
| JPH07171374A (en) | Method for operating exhaust valve | |
| JPH11186355A (en) | Load locking mechanism, substrata processing device and substrate processing method | |
| KR20060057460A (en) | Deposition equipment used to manufacture semiconductor device | |
| KR100932118B1 (en) | Vacuum system of semiconductor manufacturing equipment | |
| KR200183770Y1 (en) | Nitrogen purge device for dry etching device | |
| KR20030039452A (en) | Loadlock chamber for semiconductor fabrication apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20101125 Year of fee payment: 12 |
|
| LAPS | Lapse due to unpaid annual fee |