KR19990001285A - Pressure Sensing Device for Semiconductor Chemical Vapor Deposition Equipment - Google Patents

Abstract

The present invention relates to a pressure sensing device of a semiconductor chemical vapor deposition equipment, in the present invention through the buffer having a predetermined buffer function between the exhaust pipe and the sensor through the exhaust gas flowing through the exhaust pipe through the appropriately appropriately block the effect Thus, the life of the sensor can be extended and the sensing capability of the sensor can be improved.

Description

Pressure Sensing Device for Semiconductor Chemical Vapor Deposition Equipment

The present invention relates to a chemical vapor deposition apparatus for semiconductor manufacturing, and more particularly, semiconductor chemistry that can properly detect such a conversion when converting the pressure in the tube during the thin film deposition process from normal pressure to low pressure or from low pressure to atmospheric pressure The present invention relates to a pressure sensing device for vapor deposition equipment.

Generally, chemical vapor deposition is a process of depositing a thin film on a semiconductor substrate by chemical reaction after decomposing a gaseous compound and depositing a thin film without changing the properties of a silicon substrate unlike a thermal oxidation process or a diffusion process. Refers to the process to make.

At this time, the physical and chemical properties of the thin film obtained by chemical vapor deposition are determined by the properties of the substrate, such as amorphous, polycrystalline, surface roughness, and deposition conditions such as temperature, growth rate, and pressure.

Among these various variables, in particular, the above-mentioned pressure has a great influence on the equipment, and in the conventional chemical vapor deposition process, various sensing sensors are evacuated to control the pressure in the tube from normal pressure to low pressure or from low pressure to normal pressure. It is installed and used in the line.

1 is a cross-sectional view schematically showing the shape of the reduced pressure chemical vapor deposition equipment of the chemical vapor deposition equipment that performs this function.

As shown, the conventional pressure-sensitive chemical vapor deposition equipment is divided into four parts, the heater unit 100, the mounting unit 200, the vacuum unit 300 and the control unit (not shown).

In this case, the heater unit 100 includes a reaction tube 10 installed in the horizontal direction and a heating chamber 14 surrounding the reaction tube 10. One end of the reaction tube 10 is provided with a gas injection unit 12 for injecting a carrier gas and a source gas required for thin film deposition.

Here, the reaction tube 10 is a place where a thin film is deposited on a semiconductor substrate by chemical reaction after the source gas injected from the gas injection unit 12 together with the carrier gas is thermally decomposed.

At this time, the heating tube 14 is heated until the source gas in the reaction tube 10 can be thermally decomposed and chemical reaction.

On the other hand, the mounting unit 200 is a system for charging a boat (not shown) on which a semiconductor wafer is mounted into or into the reaction tube 10, and is located at one end of the reaction tube 10 described above, and the wafer is supported. And a soft lander head 18, to which the arm 16 and the end of the arm 16 are fixedly fixed.

On the other hand, the vacuum unit 300 includes an exhaust pipe 34, a gate valve 28, a pumping system 20, a first pressure detector 31, a second pressure detector 32, and a third pressure detector ( 36) and the atmospheric pressure presence / absence detection unit 33.

At this time, the exhaust pipe 34 is a passage through which the gas of the reaction tube 10 is exhausted, one end thereof is connected to the pumping system 20, and the other end thereof is connected to the other end of the reaction tube 10. Here, the gate valve 28 is located at a predetermined portion of the exhaust pipe 34 described above to adjust the amount of exhaust gas exhausted through the exhaust pipe 34, thereby adjusting the pressure of the reaction tube 10.

The pumping system 20 described above makes the vacuum system 26 which makes the reaction tube 10 low pressure by discharging the gas in the reaction tube 10 and makes the reaction tube 10 in the low pressure state higher. High vacuum system 22. At this time, a rotary pump is commonly used in the vacuum system 20, and a buster pump is typically used in the high vacuum system.

Meanwhile, the first pressure detector 31 and the second pressure detector 32 are positioned between the gate valve 28 and the reaction tube 10 and include a pressure sensing sensor. At this time, the pressure sensor detects the pressure in the reaction tube (10).

The third pressure sensing unit 36 described above is positioned between the gate valve 28 and the pumping system 20 and includes a sensor for pressure sensing. In this case, the pressure sensing sensor assists to easily operate the equipment by sensing the pressure in the exhaust pipe 34 rather than detecting the pressure in the reaction tube 10.

On the other hand, the control unit described above is a main device for controlling all the states of the heater unit 100, and is interfaced with the heater unit 100 and the vacuum unit 300 to collect the state of the heater unit 100 and the vacuum unit 300 By doing so, it is possible to edit a program for carrying out a series of steps.

FIG. 2 is a schematic cross-sectional view illustrating an enlarged first and second pressure detectors and an atmospheric pressure presence / absence detector.

In this case, reference numeral 52 denotes a sensor attachment port communicating and protruding at a predetermined position of the exhaust pipe, 54 a connection portion attached to the end of the sensor attachment port, and 31, 32, and 33 are attached to the sensor attachment port by the aforementioned connection portion. Indicates a sensor for pressure sensing.

Reference numeral 51 also indicates the direction in which the exhaust gas flows in the exhaust pipe.

However, there are some serious problems with conventional semiconductor chemical vapor deposition equipment having such a configuration.

First, as shown in FIG. 2, a part of the pressure sensing sensor is inserted into the exhaust pipe, wherein a flow of heating exhaust gas in the exhaust pipe directly contacts the pressure sensing sensor to corrode the resistance elements inside the sensor. Cause a problem of deteriorating the detection ability. Accordingly, the pressure sensing sensor results in controlling the pressure in the reaction tube higher or lower than the set value, and causes a malfunction of the normal pressure / non-pressure when detecting the presence / absence of the atmospheric pressure.

Secondly, as described above, the pressure sensing sensor is directly attached to the sensor attachment port which is communicated with and drawn out at a predetermined position of the exhaust pipe. Such a structure causes the space of the exhaust pipe to be narrowed and thus the pressure during operation of the vacuum part. It causes the damage of the sensor for detection and the defective port for sensor attachment.

Accordingly, an object of the present invention is to provide a pressure sensing device of a semiconductor chemical vapor deposition apparatus that can improve the pressure sensing device for sensing the pressure in the reaction tube, thereby extending the life of the sensor and improving the sensing capability of the sensor. .

1 is a cross-sectional view schematically showing the configuration of a conventional semiconductor chemical vapor deposition equipment.

2 is a cross-sectional view schematically showing the configuration of a conventional pressure sensing device.

Figure 3 is a cross-sectional view schematically showing the shape of the pressure sensing device of the semiconductor chemical vapor deposition apparatus according to the present invention.

According to an aspect of the present invention, there is provided a semiconductor chemical vapor deposition apparatus including an exhaust pipe connected to a heater and a pressure sensing device positioned at a predetermined portion of the exhaust pipe, the first port communicating with and protruding from the exhaust pipe; A first connection part attached to an end of the first port; A buffer part connected to the first port by the first connection part; Second ports communicating with and protruding from the buffer part; Second, third and fourth connections attached to ends of the second ports; And first and second pressure surge sensors and atmospheric pressure presence / absence sensors attached to the second ports by the second, third, and fourth connecting portions.

Accordingly, in the present invention, failure and failure of the pressure sensing device can be properly prevented.

Hereinafter, the pressure sensing device of the semiconductor chemical vapor deposition apparatus according to the present invention with reference to the accompanying drawings in more detail.

3 is a schematic cross-sectional view of a pressure sensing device of a semiconductor chemical vapor deposition apparatus according to the present invention.

Hereinafter, with reference to this will be described in detail the configuration and operation of the present invention.

As shown, the first port 84 communicates with and protrudes at a predetermined position of the exhaust pipe 80. At this time, the buffer portion 400 is provided at the end of the first port 84 by the first connection portion 86, and a plurality of second ports 401 communicate with each other at a predetermined position of the buffer portion 400. do.

On the other hand, a second connection portion 87 is attached to the first portion of the second port 401, the second connection portion 87 connects the first pressure sensing sensor 97 to the buffer unit 400. In addition, a third connector 88 is attached to the center of the second ports 401, and the third connector 88 connects the second pressure sensing sensor 98 to the buffer unit 400.

In addition, a fourth connecting portion 89 is attached to the last portion of the second ports 401, and the fourth connecting portion 89 connects the atmospheric pressure / non-sensing sensor 99 to the buffer 400.

Unlike the related art, the present invention has a buffer unit 400 interposed between the first and second pressure sensing sensors 97 and 98, the atmospheric pressure presence / absence sensor 99, and the exhaust pipe 80 connected thereto. do.

In this case, the buffer unit 400 has an effect of the flow of the exhaust gas 82 flowing through the exhaust pipe 80 on the above-described first and second pressure sensing sensors 97 and 98 and the atmospheric pressure presence / absence sensor 99. Minimize the role.

As described above, conventionally, the exhaust gas 82 flowing through the exhaust pipe 80 directly contacts the first and second pressure sensing sensors 97 and 98 and the atmospheric pressure presence / absence sensor 99, thereby causing corrosion thereof. This has resulted in accelerating costs, and thus, unexpected accidents have frequently occurred, with facilities frequently down.

However, in the case of the present invention, as described above, the first and second pressure sensing sensors 97 and 98 and the normal pressure presence / absence sensor 99 are simultaneously operated in the exhaust pipe 80 by the buffer unit 400. By being separated, the exhaust gas 82 flowing through the exhaust pipe 80 can have no influence on them, and thus, the first and second pressure sensing sensors 97 and 98 and the atmospheric pressure presence / absence sensor ( The problem of corrosion that occurred in 99) is solved properly.

Furthermore, in the case of the present invention, the space of the exhaust pipe 80 is properly secured by the separation and installation of the first and second pressure sensing sensors 97 and 98 and the normal pressure presence / absence sensor 99 as described above. In addition, it is possible to appropriately prevent damage to the sensor that may be caused during operation of the vacuum unit.

The present invention is not only limited to chemical vapor deposition equipment, but also has useful effects throughout all semiconductor manufacturing facilities using a predetermined process gas.

And while certain embodiments of the invention have been described and illustrated, it will be apparent that the invention may be embodied in various modifications by those skilled in the art.

Such modified embodiments should not be understood individually from the technical spirit or point of view of the present invention and such modified embodiments should fall within the scope of the appended claims of the present invention.

As described above in detail, the pressure sensing device of the semiconductor chemical vapor deposition apparatus according to the present invention intervenes a buffer portion having a predetermined buffer function between the exhaust pipe and the sensor, and thereby the influence of the exhaust gas flowing through the exhaust pipe on the sensor. By properly blocking, the life of the sensor can be extended and the sensor's sensing ability can be improved.

Claims (1)

In the semiconductor chemical vapor deposition equipment comprising an exhaust pipe connected to the heater and a pressure sensing device located at a predetermined portion of the exhaust pipe, A first port communicating with and protruding from the exhaust pipe; A first connection part attached to an end of the first port; A buffer part connected to the first port by the first connection part; Second ports communicating with and protruding from the buffer part; Second, third and fourth connections attached to ends of the second ports; Pressure sensing device of the semiconductor chemical vapor deposition apparatus comprising a first, second pressure sudden sensor and the atmospheric pressure presence / absence sensor attached to the second ports by the second, third, fourth connection portion .