KR19980061491A - Thin film type optical path control device and its manufacturing method - Google Patents

Abstract

Disclosed are a thin film type optical path adjusting device having an actuator having two supporting parts and a manufacturing method thereof. The device includes an active matrix having M × N transistors formed therein and a drain pad formed on one side thereof, and i) one side contacting an upper portion of the active matrix through two support parts, and the other side being interposed with a first air gap. A lower electrode stacked in parallel with the active matrix to which an image signal is applied, ii) a strained layer stacked on top of the lower electrode to cause deformation according to an electric field, and iii) an upper portion formed on top of the strained layer to which a bias voltage is applied. An actuator having an electrode. According to the present invention, by forming an actuator having two support portions on the top of the active matrix, it is possible to minimize the initial tilting of the actuator to improve the horizontality of the actuator, and to improve the light efficiency of the light beam incident from the light source. Can be.

Description

Thin film type optical path control device and its manufacturing method

The present invention relates to Actuated Mirror Arrays (AMA), which is a thin film type optical path adjusting device, and a method of manufacturing the same. More particularly, the present invention relates to a method of manufacturing a light beam incident from a light source by forming an actuator having two support portions on top of an active matrix. The present invention relates to a thin film type optical path adjusting device capable of improving light efficiency and a method of manufacturing the same.

In general, an optical path adjusting apparatus or an optical modulator capable of adjusting a light beam incident from a light source may be variously applied to optical communication, image processing, and information display apparatus. In general, such devices are classified into two types according to their optical properties.

One type is a direct view type image display device, such as a CRT (Cathode Ray Tube), and the other type is a projection type image display device, a liquid crystal display (LCD), an AMA, or a deformable mirror device (DMD). And the like. Although the CRT device has excellent image quality, there is a problem that the weight and volume of the device increase and the manufacturing cost increases as the screen is enlarged. On the other hand, the liquid crystal display (LCD) has an advantage in that the optical structure is simple to form a thin layer so that the weight of the device can be reduced and the volume can be reduced. However, the liquid crystal display has a disadvantage in that the efficiency is low enough to have a light efficiency of 1 to 2% due to polarization of light, the response speed of the liquid crystal material is slow, and the inside thereof is easily overheated. Therefore, an image display device such as AMA or DMD has been developed to solve the above problem. Currently, AMA has a light efficiency of 10% or more, compared to a DMD device having a light efficiency of about 5%.

The AMA reflects light incident from a light source at each of the mirrors installed therein, and the reflected light passes through a slit to be projected onto a sprinkler to adjust a light beam to form an image. Device. Therefore, the structure and operation principle thereof are simple, and high light efficiency can be obtained compared to a liquid crystal display device or a DMD. In addition, the contrast is improved to obtain a bright and clear image. The mirrors built into the AMA are inclined by the electric field generated in correspondence with the slits. Therefore, the luminous flux incident from the light source is adjusted at a predetermined angle to form an image on the screen. In general, each actuator causes deformation in accordance with the electric field generated by the applied electric image signal and the bias voltage.

When the actuator causes deformation, each of the mirrors mounted on top of the actuator is inclined. Accordingly, the inclined mirrors can reflect light incident from the light source at a predetermined angle. Piezoelectric materials such as PZT (Pb (Zr, Ti) O ₃ ), or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as actuators for driving the respective mirrors. In addition, the actuator can be configured as a warping material such as PMN (Pb (Mg, Nb) O ₃ ).

The optical path control device using AMA is largely classified into a bulk type and a thin film type. The bulk optical path control device is described, for example, in US Pat. Nos. 5,085, 497 (issued to Gregory Um, et al.), 5, 159, 225 (issued to Gregory Um, et al.), 5, 175. , Issued to Gregory Um, et al. The bulk optical path control device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer having a metal electrode therein in an active matrix including a transistor, and then processes it by sawing and mirrors on the top. It is done by installation. However, bulk devices require high precision in design and manufacture because the actuators must be separated by a sawing method, and the response speed of the deformation part is slow. Therefore, a thin film type optical path control apparatus that can be manufactured using a semiconductor manufacturing process has been developed.

Such a thin film type optical path control device is disclosed in Patent Application No. 95-13353 (name of the invention: a method of manufacturing the optical path control device), which the applicant has filed a patent on May 26, 1995. FIG. 1 is a plan view of the thin film type optical path adjusting device described in the preceding application, and FIG. 2 is a cross-sectional view taken along line AA ′ of the device shown in FIG. 1.

As shown in Fig. 1 and Fig. 2, the thin film type optical path control device is composed of an active matrix 1 and an actuator 3 provided on the active matrix 1.

The active matrix 1 is composed of a semiconductor such as silicon (Si), and includes M × N (M, N is an integer) MOS (Metal Oxide Semiconductor) transistors (not shown). In addition, the active matrix 1 may be formed of an insulating material such as glass, alumina (Al ₂ O ₃ ), or the like. A pad 5 is formed on one side of the active matrix 1. The pad 5 is electrically connected to a transistor embedded in the active matrix 1.

The actuator 3 comprises a membrane 7, a plug 9, a bottom electrode 11, an active layer 15 and a top electrode 17. It is composed of

As shown in FIG. 1, the membrane 7 has a rectangular concave portion formed at one side of a center portion of the actuator 3, and a quadrangular protrusion portion corresponding to the concave portion is formed at the other side thereof. . The protrusion of the membrane of the actuator adjacent to the concave portion of the membrane 7 is fitted, and the protrusion of the membrane 7 is fitted into the concave portion of the adjacent actuator. Also, referring to FIG. 2, a portion of one side of the membrane 7 is in contact with an upper portion of the active matrix 1 in which the pad 5 is formed, and the other side of the membrane 7 is disposed through an air gap 8. It is formed to be parallel to the matrix 1.

The plug 9 is formed perpendicular to the portion of the membrane 7 in which the pad 5 is formed. The plug 9 is electrically connected to the pad 5. The lower electrode 11 is formed on the membrane 7, and the deformable portion 15 is formed on the lower electrode 11. The upper electrode 17 is formed on the deformation part 15. The upper electrode 17 performs not only a function of the electrode but also a mirror reflecting a light beam incident from a light source.

Hereinafter, a manufacturing method of the thin film type optical path control device will be described with reference to the drawings.

3A to 3E show a manufacturing process diagram of the apparatus shown in FIG. Referring to FIG. 3A, a sacrificial layer 2 made of Phospho-Silicate Glass (PSG) is stacked on an active matrix 1 having a pad 5 formed on one side thereof. The sacrificial layer 2 is formed to have a thickness of about 1.0 to 2.0 μm by using a chemical vapor deposition (CVD) method. Subsequently, a photo resist (not shown) is applied on the sacrificial layer 2, and then a portion of the sacrificial layer 2 is etched to pad the top 5 of the active matrix 1. Expose the part in which is formed.

Referring to FIG. 3B, a membrane 7 having a thickness of about 0.1 μm to about 1.0 μm is stacked on the exposed portion of the active matrix 1 and the sacrificial layer 2. The membrane 7 is formed by sputtering or chemical vapor deposition (CVD) of silicon nitride (Si ₃ N ₄ ). Subsequently, a portion of the membrane 7 formed on the exposed portion of the active matrix 1 is etched by the conventional photolithography method to form the opening 6. Subsequently, a plug 9 made of a metal having good electrical conductivity such as tungsten (W) or titanium (Ti) is formed through the opening 6. The plug 9 is formed using a lift-off method to be electrically connected to the pad 5.

The lower electrode 11 is stacked on top of the membrane 7 in which the opening 6 is formed. The lower electrode 11 is formed to have a thickness of about 500 to 2000 Å by vacuum evaporation or sputtering of a metal such as platinum (Pt) or platinum-titanium (Pt-Ti). Form. The lower electrode 11 is electrically connected to the plug 9, so that the pad 5, the plug 9 and the lower electrode 11 are electrically connected to each other.

Referring to FIG. 3C, the deformation part 15 is stacked on the lower electrode 11. The deformable portion 15 is formed to have a thickness of about 0.1 μm to 1.0 μm using piezoelectric materials such as PZT or PLZT, or electrostrictive materials such as PMN. The deformable portion 15 is formed using a sol-gel method or a chemical vapor deposition method (CVD).

The upper electrode 17 is stacked on the deformable portion 15. The upper electrode 17 is formed to have a thickness of about 500 to 1000 kPa by sputtering or vacuum deposition. Subsequently, the upper electrode 17, the deformable part 15, the lower electrode 11, and the membrane 7 are sequentially etched from the top by using a photolithography method to pattern the pattern. In this case, the upper electrode 17, the deformable part 15, and the lower electrode 11 are etched to be separated from the upper electrode, the deformable part, and the lower electrode of the adjacent actuator, respectively. At the same time, the membrane 7 is etched to be connected with the membrane of the adjacent actuator. In addition, a protective layer 18 is formed by coating a photoresist on a side surface generated when the upper electrode 17 and the actuators are separated from each other.

Referring to FIG. 3D, the sacrificial layer 2 is etched using an oxide buffered etchant (BOE) in which ammonium fluoride (NH ₄ F) and hydrogen fluoride (HF) are mixed to form an air gap. gap) 8 is formed. In addition, the protective layer 18 is removed by a wet etching method, and the remaining etching solution is washed with deionized water. Subsequently, a photoresist is coated on the upper electrode 17 to form a mask 19.

Referring to FIG. 3E, a portion of the membrane 7 connected to a membrane of an adjacent actuator is etched by using a reactive ion etching (RIE) method using the mask 19 as an etching mask. Then, the mask 19 is removed by an oxygen (O ₂ ) plasma method to complete the AMA device.

In the thin film type optical path adjusting device having the above-described structure, an image signal generated from the MOS transistor embedded in the active matrix 1 is applied to the lower electrode 11 through the pad 5 and the plug 9. At the same time, a bias voltage is applied to the upper electrode 17 to generate an electric field between the upper electrode 17 and the lower electrode 11. By this electric field, the deformation | transformation part 15 shrinks in the direction perpendicular | vertical to an electric field. Accordingly, the actuator 3 is bent in the direction opposite to the direction in which the membrane 7 is formed, and the upper electrode 17 on the actuator 3 reflects the light beam incident from the light source. The light beam reflected by the upper electrode 17 is projected onto the screen through the slit to form an image.

However, in the thin film type optical path adjusting device described in the preceding application, since the actuator is supported by one support portion, the horizontal portion on the other side of the unsupported actuator is inclined downward even without applying an electric field, thereby causing initial tilting. tilting). As a result, the reflection angle of the mirror reflecting the light beam incident from the light source is not constant, which causes a problem of lowering the light efficiency.

Accordingly, an object of the present invention is to form an actuator having two support portions on the top of the active matrix, thereby preventing the initial tilt of the actuator to improve the flatness of the actuator, and to improve the light efficiency of the light beam incident from the light source. It is to provide an adjusting device and a method of manufacturing the same.

1 is a plan view of a thin film type optical path adjusting device described in the applicant's prior application.

2 is a cross-sectional view taken along line AA ′ of the apparatus shown in FIG. 1.

3A to 3E are manufacturing process diagrams of the apparatus shown in FIG.

Figure 4 is a perspective view of a thin film type optical path control apparatus according to the present invention.

FIG. 5 shows a cross-sectional view taken along line B-B 'of the device of FIG.

6A to 6D are manufacturing process diagrams of the apparatus shown in FIG. 5.

7 is a view showing a state in which the strained layer causes deformation when an electric field is applied to the upper electrode and the lower electrode after the polarization treatment is performed on the apparatus shown in FIG. 4.

Explanation of symbols on the main parts of the drawings

131: active matrix 133: actuator

135: drain pad 137: protective layer

139: etch stop layer 141: plug

143: sacrificial layer 145: lower electrode

147: strained layer 149: upper electrode

151: air gap

In order to achieve the above object, the present invention provides an active matrix comprising an M × N transistor and a drain pad formed on one side thereof; I) a lower electrode on which one side is in contact with the upper portion of the active matrix through two support parts, and the other side is stacked in parallel with the active matrix via an air gap to apply an image signal, and ii) the upper electrode on the lower electrode. And a deformable layer that causes deformation according to an electric field, and iii) an actuator having an upper electrode formed on the deformable layer and to which a bias voltage is applied.

In order to achieve the above object, the present invention provides a method comprising: providing an active matrix having M × N transistors embedded therein and a drain pad formed on one side thereof; And i) a lower electrode formed on both sides of the active matrix, i) both sides of which are in contact with the top of the active matfix through two support parts, and the other side of which is parallel to the active matrix via an air gap, ii) an upper portion of the lower electrode. And iii) forming an actuator having an upper electrode formed on the deformable layer.

In the thin film type optical path adjusting device according to the present invention, an image signal is applied to a lower electrode which is a signal electrode through a drain pad and a plug from a transistor embedded in an active matrix. In addition, a bias voltage is applied to the upper electrode, which is a common electrode, to generate an electric field between the upper electrode and the lower electrode. By this electric field, the strained layer laminated between the upper electrode and the lower electrode causes deformation. In the present invention, the actuator is driven by using the shear mode piezoelectric characteristics of the piezoelectric material constituting the strained layer. That is, when the strained layer is polarized in the horizontal direction with the active matrix and an electric field is applied to the upper electrode and the lower electrode, the strained layer exhibits shear strain in the direction parallel to the polarization direction. . In the actuator including the deformable layer, both sides of the actuator are supported by two support parts, so that the other side of the actuator, which is not supported by the active matrix, is bent at a predetermined angle, and the upper electrode on the actuator receives the light beam incident from the light source. Reflect. The light beam reflected at a predetermined angle by the upper electrode is projected onto the screen through the slit to form an image.

Therefore, the present invention forms an actuator having two support portions on top of the active matrix, thereby preventing the initial tilt of the actuator, thereby improving the horizontality of the actuator, and consequently improving the light efficiency of the light beam incident from the light source.

Hereinafter, a method of manufacturing a thin film type optical path control apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Figure 4 is a perspective view of a thin film type optical path control apparatus according to the present invention, Figure 5 is a cross-sectional view taken along the line B-B 'of the apparatus of FIG.

4 and 5, the thin film type optical path control apparatus according to the present invention includes an actuator matrix 131 having a drain pad 135 formed on one side and an actuator formed on the active matrix 131. 133.

The active matrix 131 includes a passivation layer 137 stacked on the active matrix 131 and the drain pad 135 and an etch stop layer stacked on the passivation layer 137. (139). In the active matrix 131, M x N (M and N are integers) MOS transistors (not shown) are embedded.

The actuator 133 has two support parts formed at both lower sides thereof and in contact with the etch stop layer 139, and the other side of the actuator 133 is stacked in parallel with the etch stop layer 139 through an air gap 151. A bottom electrode 145, an active layer 147 stacked on top of the lower electrode 145, and a top electrode 149 stacked on top of the deformation layer 147. And a plug 141 vertically formed from the lower portion of the lower electrode 145 to the drain pad 135 through the etch stop layer 139 and the protective layer 137.

In addition, referring to FIG. 4, the lower electrode 145 has a rhombus shape in a central portion thereof, and a pair of corresponding angle portions of two pairs of corresponding angles of the lower electrode 145 having the rhombus shape protrude in a rectangular shape. Is formed. Both side portions formed integrally with the rectangular protruding portion of the lower electrode 145 contact the upper portion of the active matrix 131 through two support portions.

Hereinafter, a method of manufacturing the above-described thin film type optical path control apparatus will be described in detail with reference to the accompanying drawings.

6A to 6D are manufacturing process diagrams of the apparatus shown in FIGS. 4 and 5. In Figs. 6A to 6D, the same reference numerals are used for the same members as Figs. 4 and 5.

Referring to FIG. 6A, a protective layer 137 is formed by using silicate glass PSG on an active matrix 131 having M × N transistors (not shown) and a drain pad 135 formed on one side thereof. )). The protective layer 137 is formed to have a thickness of about 0.1 μm to 1.0 μm using a chemical vapor deposition (CVD) method. The protective layer 137 prevents the active matrix 131 from being damaged during subsequent processing.

An etch stop layer 139 made of nitride is stacked on the passivation layer 137. The etch stop layer 139 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 139 prevents the protective layer 137 and the active matrix 131 from being etched during the subsequent etching process. Subsequently, the etch stop layer 139 and the protective layer 137 are etched from the portion of the etch stop layer 139 where the drain pad 135 is formed below, and then the plug 141 is formed. The plug 141 is vertically formed from the etch stop layer 139 to the drain pad 135 using a tungsten, platinum, or the like lift-off method. Therefore, the image signal is applied to the lower electrode 145 through the drain pad 135 and the plug 141 from the transistor embedded in the active matrix 131.

Referring to FIG. 6B, a sacrificial layer 143 is stacked on the etch stop layer 139 and the plug 141. The sacrificial layer 143 is formed to have a thickness of about 0.5 μm to 2.0 μm by using an silicate glass (PSG) method using an atmospheric pressure chemical vapor deposition (APCVD) method. In this case, since the sacrificial layer 143 covers the upper portion of the active matrix 131 in which the transistor is embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer 143 is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method.

After the surface of the sacrificial layer 143 is planarized, the sacrificial layer 143 is patterned to form two support portions of the actuator 133 which is subsequently formed. That is, a portion of the support layer of the actuator 133 is formed by exposing a portion of the etch stop layer 139 having the plug 141 formed below and a portion of the other side of the etch stop layer 139 in which the plug 141 is not formed. .

Referring to FIG. 6C, the lower electrode 145, which is a signal electrode, is stacked on top of the exposed etch stop layer 139 and on the sacrificial layer 143. The lower electrode 145 is formed to have a thickness of about 0.1 μm to about 1.0 μm using a metal such as platinum (Pt) or platinum-tantalum (Pt-Ta) using a sputtering method. The lower electrode 145 is formed on the sacrificial layer 143 on which the surface is planarized, and thus is stacked evenly. An image signal is applied to the lower electrode 145, which is a signal electrode, from the transistor embedded in the active matrix 131 through the drain pad 135 and the plug 141. The lower electrode 145 simultaneously performs the functions of the membrane and the lower electrode in the thin film type optical path adjusting device described in the previous application. This eliminates the need for a membrane manufacturing process and simplifies the manufacturing process. Subsequently, Iso-Cutting is performed to separate the lower electrode 145 into a predetermined pixel shape.

Subsequently, a strain layer 147 formed of PZT or PLZT is formed on the lower electrode 145. The strained layer 147 is formed to have a thickness of about 0.1 to 1.0 μm, preferably about 0.4 μm, by using a sol-gel method, sputtering method, or chemical vapor deposition (CVD) method, and then rapid thermal annealing. : Phase change by heat treatment by RTA) method. The strained layer 147 is deformed by an electric field generated between the upper electrode 149 and the lower electrode 145. The strained layer 147 is also formed on the upper portion of the lower electrode 145, which is formed flat, so that the surface is stacked evenly.

The upper electrode 149 is stacked on top of the strained layer 147. The upper electrode 149 is formed of a metal having excellent electrical conductivity such as aluminum (Al), platinum, or silver (Ag) to have a thickness of about 0.1 to 1.0 μm using a sputtering method. Subsequently, the upper electrode 149, the deformable layer 147, and the lower electrode 145 are sequentially patterned from the upper portion of the upper electrode 149 to form a center portion of a rhombus shape and a pair of pairs of corresponding angles of the rhombus. Corresponding angle portions are formed in a shape projecting in a rectangular shape. The lower electrode 145 may be formed in a circular or quadrangular shape.

Referring to FIG. 6D, the sacrificial layer 143 is etched using hydrogen fluoride (HF) vapor to form an air gap 151, and then cleaned and dried to complete the actuator 133. Then, a rinse and dry treatment is performed to remove the remaining etching solution to complete the AMA device.

After completing the M × N thin film type AMA devices as described above, the active matrix 131 is formed by sputtering or evaporation of a metal such as chromium (Cr), nickel (Ni), or gold (Au). Is deposited at the bottom of the to form an ohmic contact (not shown). In addition, contrast is provided to a tape carrier package (TCP) (not shown) bonding for applying a bias voltage to a subsequent upper electrode 149 which is a common electrode and an image signal to a lower electrode 145 which is a signal electrode. The active matrix 131 is cut to a predetermined thickness. Subsequently, a photoresist layer (not shown) is formed on the pad of the AMA panel so that the pad of the AMA panel (not shown) has a sufficient height in preparation for TCP bonding. Subsequently, a portion of the photoresist layer on which the pad is formed is patterned to expose the pad of the AMA panel. Subsequently, the photoresist layer is etched using a dry etching method or a wet etching method, and the active matrix 131 is completely cut into a predetermined shape, and then the pad of the AMA panel and the pad of TCP are ACF (Anisotropic Conductive Film). (Not shown) to complete the manufacture of the thin film AMA module (module).

FIG. 7 illustrates a strained layer 147 when an electric field is applied to the upper electrode 149 and the lower electrode 145 after polarizing the piezoelectric material constituting the strained layer 147 of FIG. 4. ) Shows a state in which deformation occurs. Referring to FIG. 7, when the strained layer 147 is polarized in the horizontal direction with the active matrix 131 (see + -direction in the drawing), an electric field is applied to the actuator 133. The strained layer 147 exhibits shear strain in a polarization direction and a direction parallel to the direction of the arrow (arrow). At this time, since both sides of the actuator 133 including the deformable layer 147 are supported by two support parts, the other side of the actuator 133 which is not supported is bent at a predetermined angle. The light beam incident from the light source is reflected by the upper electrode 149 on the actuator 133 and then is projected onto the screen through the slit to form an image.

In the above-described thin film type optical path control apparatus according to the present invention, the image signal transmitted through the pad of the TCP and the pad of the AMA panel is transmitted through the transistor, the drain pad 135 and the plug 141 built in the active matrix 131. It is applied to the lower electrode 145 which is a signal electrode. At the same time, a bias voltage is applied to the upper electrode 149, which is a common electrode, to generate an electric field between the upper electrode 149 and the lower electrode 145. The strained layer 147 between the upper electrode 149 and the lower electrode 145 causes deformation by this electric field.

Conventionally, since the strained layer is supported on one support, when the electric field is applied, the upper electrode of the upper part of the actuator is operated by the operating principle of tilting the actuator at a predetermined angle while the strained layer contracts in a direction perpendicular to the electric field. The light beam incident from the light source was reflected. The light beam reflected by the upper electrode is projected onto the screen through the slit to form an image. In contrast, in the present invention, the actuator 133 is driven using a shear mode piezoelectric characteristic of the piezoelectric material constituting the strained layer 147. That is, after polarizing the active matrix 131 to the strained layer 147 in the horizontal direction, and applying an electric field to the device, the strained layer 147 shears the strain in the direction parallel to the polarization direction. (shear strain). At this time, since both sides of the deformable layer 147 are supported by two supporting portions, the other unsupported portion of the actuator 133 including the deformable layer 147 is predetermined by shear deformation of the deformable layer 147. Will be bent at an angle. The light beam incident from the light source is reflected by the upper electrode 149 on the actuator 133 and then is projected onto the screen through the slit to form an image.

In the thin film type optical path control apparatus and its manufacturing method according to the present invention, by forming an actuator having two support portions on the top of the active matrix, the initial tilt of the actuator is minimized to improve the horizontality of the actuator, and as a result, incident from the light source The light efficiency of the luminous flux can be improved.

As described above, although described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified without departing from the spirit and scope of the invention described in the claims below. And can be changed.

Claims (9)

An active matrix 131 having M × N transistors embedded therein and a drain pad 135 formed on one side thereof; And i) The lower electrode 145 on which both sides contact the upper portion of the active matrix 131 through two support parts, and the other side is stacked in parallel with the active matrix 131 via the air gap 151 to which an image signal is applied. ), ii) a strained layer 147 stacked on top of the lower electrode 145 to cause deformation according to an electric field, and iii) an upper electrode 149 formed on the strained layer 147 and applied with a bias voltage. Thin film type optical path control device comprising an actuator (133) having a. The method of claim 1, wherein the active matrix 131 includes a passivation layer 137 formed on the active matrix 131 and the drain pad 135, and an etch stop layer 139 formed on the passivation layer 137. And a plug (141) vertically formed through the etch stop layer (139) and the protective layer (137) to the drain pad (135). The lower electrode 145 has a center portion having a rhombus shape, and a pair of corresponding angle portions of two pairs of corresponding angles of the lower electrode having the rhombus shape have a flat plate shape protruding in a quadrangular shape. Thin film type optical path control device. The thin film type optical path control device according to claim 1, wherein the lower electrode (145) has a central shape or a circular shape. Providing an active matrix having M × N transistors and a drain pad formed on one side thereof; And On the upper part of the active matrix, i) a lower electrode formed on both sides of the active matrix in contact with the upper part of the active matrix through two supporting parts, the other side is parallel to the active matrix via an air gap, ii) formed on the upper part of the lower electrode And iii) forming an actuator having an upper electrode formed on top of the strained layer. The method of claim 5, wherein forming the actuator comprises: i) forming a protective layer on top of the drain pad and the active matrix, ii) forming an etch stop layer on top of the protective layer, iii) And forming a plug vertically through the etch stop layer and the passivation layer to the drain pad. The method of claim 5, wherein the forming of the lower electrode comprises: i) forming a sacrificial layer on top of the etch stop layer and the plug, and ii) using spin-on glass (SOG) on the surface of the sacrificial layer. Planarization using a method, or a CMP method, and iii) etching and patterning the sacrificial layer to expose two portions of an etch stop layer having a plug formed thereon and a portion of the other side of the etch stop layer having no plug formed thereon, thereby providing two actuators. The manufacturing method of the thin film type optical path control apparatus, characterized in that is performed after the step of forming a portion to be formed of the support portion. 6. The method of claim 5, wherein the forming of the actuator comprises polarizing the strain layer in a horizontal direction with respect to an active matrix. 7. The thin film type optical path control method according to claim 8, wherein the polarized strain layer exhibits shear strain in a direction parallel to the polarization direction by an electric field generated between the lower electrode and the upper electrode. Method of manufacturing the device.