KR100209945B1 - An actuated mirror arrays having large deformable actuators therein - Google Patents

Abstract

A thin film type optical path adjusting device capable of increasing the driving angle of an actuating part is disclosed. The apparatus includes an active matrix including a drain, a protective layer, and an etch stop layer, and a first actuating portion and a second actuating portion formed on top of the active matrix. The first actuating part has a first membrane, a first lower electrode, a first deforming part, and a first upper electrode, and the second actuating part has a second membrane, a second lower electrode, a second deforming part, and a first upper electrode. 2 has an upper electrode. Therefore, the device can drive the mirror at twice the driving angle to increase the light efficiency, and can improve the contrast to produce a bright and clear image.

Description

Thin film type optical path control device with large displacement

The present invention relates to a thin film type optical path control device using AMA (Actuated Mirror Arrays), and more particularly to a thin film type optical path control device that can increase the driving angle of the mirror while having a small area.

An optical path adjusting device or an optical modulator capable of adjusting the light flux may be variously applied to optical communication, image processing, and information display apparatus. In general, such devices are classified into two types according to their optical properties. One type is a direct view type image display device, such as a CRT (Cathode Ray Tube), and the other type is a projection type image display device, a liquid crystal display (LCD), an AMA, or a deformable mirror device (DMD). ) And the like. Although the CRT device has excellent image quality, there is a problem that the weight and volume of the device increase and the manufacturing cost increases as the screen is enlarged. On the other hand, the liquid crystal display (LCD) has an advantage in that the optical structure is simple to form a thin layer so that the weight of the device can be reduced and the volume can be reduced. However, the liquid crystal display device is inferior in efficiency to have a light efficiency of 1 to 2% due to the polarized light, the response speed of the liquid crystal material is slow, the inside thereof is easy to overheat. Therefore, an image display device such as AMA or DMD has been developed to solve the above problem. Currently, AMA has a light efficiency of 10% or more, compared to a DMD device having a light efficiency of about 5%.

The AMA is a device that can adjust the luminous flux so that each of the mirrors installed therein reflects the light incident from the light source at a predetermined angle, and the reflected light passes through a slit and is projected onto the screen to form an image. to be. Therefore, the structure and operation principle thereof are simple, and high light efficiency can be obtained compared to a liquid crystal display device or a DMD. In addition, the contrast is improved to obtain a bright and clear image. The mirrors built into the AMA are inclined by the electric field generated in correspondence with the slits. Therefore, the luminous flux incident from the light source is adjusted at a predetermined angle to form an image on the screen. In general, each actuator causes deformation in accordance with the electric field generated by the applied electric image signal and the bias voltage.

When the actuator causes deformation, each of the mirrors mounted on top of the actuator is inclined. Accordingly, the inclined mirrors can reflect light incident from the light source at a predetermined angle. Piezoelectric materials such as PZT (Pb (Zr, Ti) O ₃ ), or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as actuators for driving the respective mirrors. In addition, the actuator can be configured as a warping material such as PMN (Pb (Mg, Nb) O ₃ ).

The optical path control device using AMA is largely classified into a bulk type and a thin film type. Such bulk devices are disclosed, for example, in US Pat. Nos. 5,085,497 (issued to Gregory Um, et al.), 5,159,225 (issued to Gregory Um), 5,175,465 (issued to Gregory Um, et al.) And the like. have. The bulk device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer on which a metal electrode is formed, and mounts it on an active matrix in which a transistor is built, and then processes it by sawing and installs a mirror on the top. Is done. However, bulk devices require high precision in design and manufacture because the actuators must be separated by a sawing method, and the response speed of the deformation part is slow. Therefore, a thin film type device which can be manufactured using a semiconductor manufacturing process has been developed.

Such a thin film type optical path control device is disclosed in Korean Patent Application No. 95-13358 (name of the invention: optical path control device) filed by the applicant to the Korean Intellectual Property Office.

FIG. 1 shows a plan view of the thin film type optical path adjusting device described in the above prior application, and FIG. 2 shows a cross-sectional view taken along the line AA ′ of the device shown in FIG. 1. As shown in Fig. 1 and Fig. 2, the thin film type optical path adjusting device is composed of an active matrix 1 and an actuator 3 formed on the active matrix 1. The active matrix 1 is made of a semiconductor such as silicon (Si), and includes M x N (M, N is an integer) MOS transistors (not shown). In addition, the active matrix 1 may be formed of an insulating material such as glass and alumina (Al ₂ O ₃ ).

The pad 5 is formed on one side of the active matrix 1. The pad 5 is electrically connected to the MOS transistor embedded in the active matrix 1.

The actuator 3 is composed of a membrane 7, a plug 9, a lower electrode 11, a deformable portion 15, and an upper electrode 17. The membrane 7 is laminated to have a thickness of about 0.01 to 1.0 탆 using an insulating material such as nitride. As shown in FIG. 1, the membrane 7 has a rectangular concave portion formed at one side of a center portion of the actuator 3, and a quadrangular protrusion portion corresponding to the concave portion is formed at the other side thereof. . The protrusion of the membrane of the actuator adjacent to the rectangular concave portion is fitted, and the protrusion of the membrane 7 is fitted into the concave portion of the adjacent membrane. Also, referring to FIG. 2, the membrane 7 is formed such that one side is in contact with the top of the active matrix 1 and the other side is parallel to the active matrix 1 via an air gap 8. .

The plug 9 is formed perpendicular to the portion of the membrane 7 in which the pad 5 is formed. The plug 9 is formed by filling a metal such as tungsten (W) or titanium (Ti) and is electrically connected to the pad 5. The lower electrode 11 is stacked on the membrane 7 so as to have a thickness of about 500 to 2000 microns using platinum (Pt), titanium, or the like. A stripe 13 is formed on one side of the lower electrode 11 to expose the membrane 7. The stripe 13 uniformly operates the upper electrode 17 as a reflective layer to prevent diffuse reflection of the luminous flux, thereby improving light efficiency.

The deformable portion 15 is formed on the lower electrode 11 so as to have a thickness of about 0.01 to 1.0 탆 using piezoelectric materials such as PZT or PLZT, or electrostrictive materials such as PMN. The deformable portion 15 is formed to fill the stripe 13 formed on one side of the lower electrode 11. The upper electrode 17 is formed on the deformable portion 15 so as to have a thickness of about 500 to 1000 mW by using a metal having good electrical conductivity and reflective properties such as aluminum (Al) or silver (Ag). The upper electrode 17 performs not only a function of an electrode but also a mirror reflecting an incident light beam.

In the above-described thin film type optical path adjusting device, the image signal generated from the MOS transistor embedded in the active matrix 1 is applied to the lower electrode 11 through the pad 5 and the plug 9. At the same time, a bias voltage is applied to the upper electrode 17 to generate an electric field between the upper electrode 17 and the lower electrode 11. The deformable portion 15 contracts in a direction perpendicular to the electric field so that the actuator 3 bends in a direction opposite to the direction in which the membrane 7 is formed, thereby allowing the light beam incident from the light source to the upper portion of the upper portion of the actuator 3. Electrode 17 reflects. The light beam reflected by the upper electrode 17 is projected onto the screen through the slit.

However, in the above-described thin film type optical path control device, only a part of the upper electrode reflects the light beam, thereby reducing the driving angle and lowering the light efficiency. In addition, since the displacement of the actuator by the deformable portion is small, there is a problem that the contrast is lowered because the driving angle of the mirror is small. Accordingly, an object of the present invention is to provide a thin film type optical path control apparatus capable of increasing the driving angle of a mirror by increasing the displacement of the actuator.

1 is a plan view of a thin film type optical path adjusting device described in the applicant's prior application.

FIG. 2 is a cross-sectional view taken along line A′A ′ of the apparatus shown in FIG. 1.

3 is a plan view of a thin film type optical path control apparatus according to the present invention.

4 is a cross-sectional view of the apparatus shown in FIG. 3 taken along line B′B ′.

5 is a cross-sectional view taken along line C-C 'of the apparatus shown in FIG.

6 to 9B are manufacturing process diagrams of the apparatus shown in FIGS. 4 and 5.

<Explanation of symbols for main parts of drawing>

31: Active matrix 32: Drain

33: protective layer 35: etching prevention layer

36: sacrificial layer 37: 1st membrane

38: first air gap 39: first lower electrode

40: 2nd membrane 41: 1st deformation | transformation part

42: via contact 43: first upper electrode

47: 1st actuating part 51: 2nd actuating part

53: second lower electrode 55: second deformable portion

57: second upper electrode 59: second air gap

61: Mirror

In order to achieve the above object, the present invention,

An active matrix in which M × N (M and N are integer) transistors are formed and a drain is formed on one side;

One side of the first side of the active matrix is in contact with the other side of the first membrane formed to be parallel to the active matrix via a first air gap, the first lower electrode formed on the upper portion of the first membrane, the first lower electrode A first actuating part including a first deformable part formed on an upper part, and a first upper electrode formed on the first deformable part; And

A second membrane integrally formed with the first membrane so as to be parallel to the active matrix on the other side of the active matrix, a second lower electrode formed on the second membrane, and a second deformation formed on the second lower electrode And a second upper electrode formed on the second deformable part, and a second actuator formed integrally with the first actuating part.

The active matrix further includes a passivation layer formed on the active matrix and an etch stop layer formed on the passivation layer.

The protective layer is formed to have a thickness of about 0.1 to 1.0 µm using phosphorus silicate glass (PSG), and the etch stop layer is formed to have a thickness of about 1000 to 2000 µm using nitride.

Preferably, the first lower electrode has a shape in which one side portion is bent at a right angle toward a portion where the first actuating portion and the second actuating portion are connected, and the second lower electrode has one side portion at the first lower electrode. It has a shape bent at a right angle toward the portion connecting the first actuating portion and the second actuating portion so as not to overlap the bent portion of the bent portion, the bent portion of the second lower electrode is bent portion of the first lower electrode It extends longer and is formed to reach the center of the first membrane.

Also preferably, the second lower electrode has an 'L' shape around the center of a portion where the first actuating portion and the second actuating portion are connected, and the first lower electrode has a mirror shape. It has an L 'shape.

In the thin film type optical path control device, a first lower electrode is connected to the second upper electrode, the first upper electrode is connected to the second lower electrode, and the second actuating part of the second upper electrode One side is in contact with the upper side and the other side further comprises a mirror formed to be parallel to the second upper electrode via the second air gap. Preferably, the first actuating part and the second actuating part are driven in opposite directions to each other.

In the thin film type optical path adjusting device according to the present invention, an image signal generated from an MOS transistor embedded in an active matrix is applied to the first lower electrode, and a bias voltage is applied to the first upper electrode. Therefore, an electric field is generated between the first upper electrode and the first lower electrode. This electric field causes deformation of the first deformable portion between the first upper electrode and the first lower electrode. The first deformable part contracts in a direction perpendicular to the electric field, and thus the first actuating part is bent at a driving angle having a magnitude of θ. At the same time, a bias voltage is applied to the second lower electrode of the second actuating part from the first upper electrode of the first actuating part. In addition, an image signal is applied to the second upper electrode of the second actuating part from the first lower electrode of the first actuating part. Therefore, a reverse electric field is generated between the second upper electrode and the second lower electrode of the second actuating part opposite to the electric field of the first actuating part. Accordingly, the second deformed portion contracts and the second actuating portion is bent in a direction opposite to the first actuating portion with a driving angle of θ magnitude. In other words, the sum of the driving angles of the first actuating part and the second actuating part is 2θ. Since the mirror reflecting the light beam is provided on the upper part of the second actuating part, the mirror is inclined with a driving angle of 2θ.

Therefore, the above-described thin film type optical path adjusting device according to the present invention can drive the mirror at a driving angle twice as large as that of the optical path adjusting device described in the preceding application while having a narrow area. Therefore, the light efficiency of the light beam incident from the light source can be increased, and the contrast can be improved to form a clear image.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

3 is a plan view showing a thin film type optical path control device according to the present invention, FIG. 4 is a cross-sectional view taken along line BB ′ of the device shown in FIG. 3, and FIG. 5 is a CC of the device shown in FIG. A cross-sectional view taken along the line ′ is shown, and FIGS. 6 to 9B are manufacturing process drawings of the apparatus shown in FIGS. 4 and 5.

Referring to FIG. 3, the apparatus for controlling a thin film type optical path includes a first actuator 47 and a second actuator 51 integrally formed on an active matrix 31 and an upper portion of the active matrix 31. Include. In FIG. 4, the same reference numerals are used for the same members as in FIG.

3 and 4, the active matrix 31 includes a drain 32 formed on one side of the active matrix 31, and a protection layer 33 formed on the active matrix 31 and the drain 32. And an etch stop layer 35 formed on the passivation layer 33.

The first actuating part 47 has one side in contact with the etch stop layer 35 having a drain 32 formed at the bottom thereof, and the other side thereof is parallel to the etch stop layer 35 via the first air gap 38. The first membrane 37 formed, the first lower electrode 39 formed on the first membrane 37, the first deformable portion 41 formed on the first lower electrode 39, and the first Via contact 42 formed vertically from one upper portion of the deformable portion 41 to the drain 32, and a first upper electrode 43 formed on the other upper portion of the first deformable portion 41. It is composed.

In FIG. 5, the same reference numerals are used for the same members as in FIG. 4. Referring to FIG. 5, the second actuating part 51 may include a second membrane 40 integrally formed with the first membrane 37 of the first actuating part 47, and the first actuating part ( 47 and the first upper electrode 43 of the first actuating part 47 and the second formed on the second membrane 40 at one side of the portion where the second actuating part 51 is connected 2, the lower electrode 53, the second deformable part 55 formed on the second lower electrode 53, and a portion where the first actuating part 47 and the second actuating part 51 are connected to each other. The second upper electrode 57 formed on the second deformable portion 55 and in contact with the first lower electrode 39 of the first actuating portion 47 on the other side, and the second upper electrode 57. One side is in contact with the upper portion of the) and the other side includes a mirror 61 formed to be parallel to the second upper electrode 57 via the second air gap (59).

Hereinafter, a manufacturing process of a thin film type optical path control device according to the present invention will be described with reference to the drawings.

Referring to FIG. 6, a silicate glass Phospho is formed on top of an active matrix 31 in which M × N (M and N are integers) MOS transistors (not shown) are formed and a drain 32 is formed on one side. A protective layer 33 is laminated using -Silicate Glass: PSG. The protective layer 33 is formed to have a thickness of about 1.0 to about 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 33 prevents the active matrix 31 from being damaged by the subsequent process.

The etch stop layer 35 is formed by depositing nitride on the upper portion of the protective layer 33 to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (LPCVD) method. The etch stop layer 35 prevents the active matrix 31 from being etched and damaged during the subsequent etching process.

The sacrificial layer 36 is formed on the upper portion of the etch stop layer 35 to have a thickness of about 1.0 to about 2.0 μm using phosphorous silicate glass (PSG) using an atmospheric pressure chemical vapor deposition (APCVD) method. Laminated. At this time, since the sacrificial layer 36 made of in-silicate glass covers the surface of the active matrix 31 in which the MOS transistor is embedded, the flatness of the surface is very poor. Accordingly, the surface of the sacrificial layer 36 is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method. Subsequently, a portion of the sacrificial layer 36 is etched to expose a portion of the etch stop layer 35 in which the drain 32 is formed at the lower portion.

7A is a manufacturing process diagram of the first actuating part 47, and FIG. 7B is a manufacturing process diagram of the second actuating part 51. 7C shows a plan view of the first actuating part 47 and the second actuating part 51 shown in FIGS. 7A and 7B. 7A to 7C, the first membrane 37 and the second membrane 40 are simultaneously stacked using nitride on the sacrificial layer 36. The first membrane 37 is formed on the exposed portion of the etch stop layer 35 and the sacrificial layer 36, and the second membrane 40 is integral with the first membrane 37. Is formed on top of the The first membrane 37 and the second membrane 40 are formed to have a thickness of about 0.1 to 1.0 탆 by low pressure chemical vapor deposition (LPCVD). Subsequently, the first membrane 37 and the second membrane 40 are patterned so that the first membrane 37 and the second membrane 40 together have an 'L' shape.

The first lower electrode 39 and the second lower electrode 53 are stacked on top of the first membrane 37 and the second membrane 40, respectively. The first lower electrode 39 and the second lower electrode 53 are formed to have a thickness of about 500 to 2000 micrometers by using a sputtering method of platinum or titanium. Subsequently, as shown in FIG. 7C, the first lower electrode 39 of the first actuating part 47 and the second lower electrode 53 of the second actuating part 51 are patterned, respectively. The first lower electrode 39 has a shape in which one side portion is bent at a right angle toward a portion where the first actuating portion 47 and the second actuating portion 51 are connected to each other, and is formed on the first membrane 37. . In addition, the second lower electrode 53 may be perpendicular to the portion where the first actuator 47 and the second actuator 51 are connected so that one side thereof does not overlap with the bent portion of the first lower electrode 39. The bent portion of the second lower electrode 53 extends longer than the bent portion of the first lower electrode 39 to reach the center of the first membrane 37. Accordingly, the second lower electrode 53 has an 'L' shape around the center of the portion where the first actuating part 47 and the second actuating part 51 are connected, and the first lower electrode 39 ) Has a mirror-shaped 'L' shape.

8A is a manufacturing process diagram of the first actuating portion 47, FIG. 8B is a manufacturing process diagram of the second actuating portion 51, and FIG. 8C is a first actuating portion 47 shown in FIGS. 8A and 8B. ) And the second actuating part 51 are shown. 8A through 8C, a first deforming part 41 and a second deforming part 55 are formed on the first lower electrode 39 and the second lower electrode 53, respectively. The first deformable portion 41 and the second deformable portion 55 are laminated using a piezoelectric material such as ZnO to have a thickness of about 0.01 to 1.0 탆. The first deformable part 41 and the second deformable part 55 are formed using a sol-gel method or a chemical vapor deposition (CVD) method, and then rapid thermal annealing (RTA). Phase change by heat treatment using the method. Subsequently, as shown in FIG. 8C, the first deformable portion 41 of the first actuating portion 47 and the second deformable portion 55 of the second actuating portion 51 are patterned. The first deforming portion 41 is formed to cover a portion of the first lower electrode 39 except for the portion bent at a right angle. In addition, the second deformable portion 55 of the second actuating portion 51 is also formed to cover a portion of the second lower electrode 53 except for the portion bent at a right angle. The first upper electrode 43 and the second upper electrode 57 are formed on the first deformable part 41 and the second deformable part 55. The first upper electrode 43 and the second upper electrode 57 are formed to have a thickness of about 500 to 1000 mW using a sputtering method of a metal having excellent electrical conductivity such as aluminum or silver. Subsequently, as shown in FIG. 8C, the first upper electrode 43 and the second upper electrode 57 are patterned.

One side portion of the first upper electrode 43 of the first actuating portion 47 is in contact with the bent portion of the second lower electrode 53 and is formed on the upper portion of the first deformation portion 41. In addition, one side of the second upper electrode 57 of the second actuating part 51 is in contact with the bent portion of the first lower electrode 39, and is formed on the second deformable part 55. Accordingly, the first lower electrode 39 of the first actuating part 47 is connected to the second upper electrode 57 of the second actuating part 51 and the first of the first actuating part 47. The upper electrode 43 is connected to the second lower electrode 53 of the second actuating part 51. As a result, the image signal generated from the transistor embedded in the active matrix 31 is applied to the first lower electrode 39 and the second upper electrode 57, and the bias voltage is applied to the first upper electrode 43 and the second lower electrode. It is applied to the electrode 53. Therefore, the electric field generated between the first upper electrode 43 and the first lower electrode 39 and the electric field generated between the second upper electrode 57 and the second lower electrode 53 have opposite directions.

9A is a manufacturing process diagram of the first actuating part 47, and FIG. 9B is a manufacturing process diagram of the second actuating part 51.

Referring to FIG. 9A, the first deforming part 41, the first lower electrode 39, the first membrane 37, the etch stop layer 35, and the protective layer 33 of the first actuating part 47 are provided. ) Is sequentially etched to form the via contact 42. The via contact 42 is formed by a lift-off method using tungsten or titanium. The via contact 42 is formed from the upper portion of the first deformable portion 41 to the drain 32 to electrically connect the drain 32 and the first lower electrode 39. Subsequently, a mirror 61 is formed on the second upper electrode 57 of the second actuating part 51. The mirror 61 is formed of a metal such as aluminum or platinum so as to have a thickness of about 500 to 1000 mm by using a conventional photolithography method and sputtering method. One side of the mirror 61 is bent to contact the upper portion of the second upper electrode 57, and the other side is formed to be parallel to the second upper electrode 57 via the second air gap 59. The first actuating part 47 and the second actuating part 51 are completed by forming the first air gap 38 by etching the sacrificial layer 36 with hydrogen fluoride (HF) vapor.

In the above-described thin film type optical path control device according to the present invention, an image signal generated from a MOS transistor (not shown) embedded in the active matrix 31 is applied to the first lower electrode 39. 43, a bias voltage is applied. Therefore, an electric field is generated between the first upper electrode 43 and the first lower electrode 39. Due to this electric field, the first deformation portion 41 between the first upper electrode 43 and the first lower electrode 39 causes deformation. The first deformable portion 41 is contracted in a direction perpendicular to the electric field, whereby the first actuating portion 47 is bent with a driving angle of θ size. At the same time, a bias voltage is applied from the first upper electrode 43 of the first actuating part 47 to the second lower electrode 53 of the second actuating part 51. In addition, an image signal is applied to the second upper electrode 57 of the second actuating part 51 from the first lower electrode 39 of the first actuating part 47. Therefore, the electric field generated between the first upper electrode 43 and the first lower electrode 39 between the second upper electrode 57 and the second lower electrode 53 of the second actuating part 51 is not included. Reverse electric field occurs. Accordingly, the second deformable portion 55 is contracted so that the second actuating portion 51 is bent in a direction opposite to the first acting portion 47 with a driving angle of θ size. That is, the sum of the driving angles of the first actuator 47 and the second actuator 51 is 2θ. Since the mirror 61 reflecting the light beam is provided on the upper portion of the second actuating part 51, the mirror 61 is inclined with a driving angle of 2θ.

Therefore, the above-described thin film type optical path adjusting device according to the present invention can drive the mirror at a driving angle twice that of the optical path adjusting device disclosed in the preceding application while having a narrow area. Therefore, the light efficiency of the light beam incident from the light source can be increased, and the contrast can be improved to form a clear image.

As mentioned above, although this invention was demonstrated and demonstrated in detail by the preferable Example, this invention is not limited by this and it is possible for a person skilled in the art to modify and improve it within a normal range.

Claims (10)

An active matrix 31 in which M × N (M and N are integer) transistors are formed and a drain 32 is formed on one side; A first membrane 37 and the first membrane 37 formed to be in contact with an upper portion of one side of the active matrix 31 and the other side is parallel to the active matrix 31 via a first air gap 38. A first lower electrode 39 formed on an upper portion of the first lower electrode 39, a first deformable portion 41 formed on the first lower electrode 39, and a first upper electrode formed on the first deformable portion 41. A first actuating portion 47 comprising 43; And A second membrane 40 integrally formed with the first membrane 37 so as to be parallel to the active matrix 31 on the other side of the active matrix 31, and a second formed on the second membrane 40. A lower electrode 53, a second deformable portion 55 formed on the second lower electrode 53, and a second upper electrode 57 formed on the second deformable portion 55. Thin film type optical path control device comprising a second actuator (51) formed integrally with the first actuator (47). The protective layer 33 formed on the active matrix 31 and the drain 32 and the etch stop layer 35 formed on the protective layer 33. Thin film type optical path control device further comprising a. 3. The thin film type optical path adjusting device according to claim 2, wherein the protective layer (33) is formed to have a thickness of about 1.0 to 2.0 [mu] m using phosphorus silicate (PSG). 3. The thin film type optical path adjusting device according to claim 2, wherein the etch stop layer (35) is formed to have a thickness of about 1000 to 2000 mm3 using nitride. The method of claim 1, wherein the first lower electrode 39 has a shape in which one side is bent at a right angle toward a portion where the first actuating part 47 and the second actuating part 51 are connected. The lower electrode 53 is perpendicular to the portion where the first actuating portion 47 and the second actuating portion 47 are connected so that one side thereof does not overlap with the bent portion of the first lower electrode 39. It has a curved shape, characterized in that the bent portion of the second lower electrode 53 extends longer than the bent portion of the first lower electrode 39 to reach the central portion of the first membrane 37 Thin film type optical path control device. The method of claim 5, wherein the second lower electrode 53 has an 'L' shape around the center of the portion where the first actuating portion 47 and the second actuating portion 51 are connected. And the first lower electrode 39 has a mirror-shaped 'L' shape. The method of claim 1, wherein the first lower electrode 39 is connected to the second upper electrode 57, and the first upper electrode 43 is connected to the second lower electrode 53. Thin film type optical path control device. 2. The second upper actuator 57 of claim 1, wherein one side of the second actuator 51 is in contact with the upper portion of the second upper electrode 57, and the other side of the second actuating portion 51 is disposed through the second air gap 59. Thin film type optical path control device, characterized in that it further comprises a mirror (61) formed in parallel with. The apparatus of claim 8, wherein the mirror (61) is formed by a sputtering method using aluminum or platinum. The apparatus of claim 1, wherein the first actuating part (47) and the second actuating part (51) are driven in opposite directions to each other.