KR19980039928A - Semiconductor Chemical Vapor Deposition Equipment - Google Patents

Abstract

The present invention relates to a semiconductor chemical vapor deposition apparatus capable of shortening the time for heating a wafer placed in a process chamber to a process temperature to improve productivity.

The configuration of the present invention is a plurality of process chamber 21 and the elevator 23, the load lock chamber 22 provided between the process chamber 21 and the elevator 23, and the load lock chamber 22 In the semiconductor chemical vapor deposition apparatus provided with a robot 24 installed to remove a wafer from a cassette placed in an elevator 23 and transfer and convey it to a process chamber 21, a preheating chamber on one side of the load lock chamber 22. (25) is installed, and a heating block (26) capable of transferring up and down in the preheating chamber (25), and a heater (27) capable of heating a plurality of wafers on the heating block (26). ).

As a result, the time for raising the temperature inside the process chamber to the process temperature is shortened, and the productivity is improved. The pre-heating by the Ar plasma performed at the beginning of the process is not necessary, thereby preventing device damage and thermal damage by the Ar plasma. have.

Description

Semiconductor Chemical Vapor Deposition Equipment

The present invention relates to a semiconductor chemical vapor deposition apparatus, and more particularly to a semiconductor chemical vapor deposition apparatus that can improve the productivity by shortening the time to heat the wafer placed in the process chamber to the process temperature.

1 shows a conventional chemical vapor deposition apparatus, in which a wafer is provided with a plurality of process chambers 11 for performing a process, and the process chamber 11 maintains high vacuum, so that the wafer is loaded in the standby state. The chamber 12 is transferred into the process chamber 11 in a high vacuum state.

That is, a plurality of elevators 13 are provided outside one side of the load lock chamber 12, and a cassette (not shown) on which a plurality of wafers are stacked is placed in the elevator 13. Accordingly, the robot 14 transfers the wafer loaded in the cassette into the load lock chamber 12 through the entrance through the elevator 13 to make the interior of the load lock chamber 12 stand by. Thereafter, the door communicating with the elevator 13 is closed and the inside of the load lock chamber 12 is brought close to the vacuum in the process chamber 11. Then, the door between the load lock chamber 12 and the process chamber 11 is opened to open the wafer. The process chamber 11 is transferred to the process chamber 11, and then the temperature inside the process chamber 11 is raised to the process temperature to perform the process on the wafer.

When the process is completed in this way, the door between the load lock chamber 12 and the process chamber 11 is opened again, the robot 14 takes the wafer out of the process chamber 11, and the load lock chamber 12 Since the vacuum is in a standby state, the door between the elevators 13 is opened to load the wafer into the cassette.

In the conventional chemical vapor deposition apparatus in which the process is performed through this process, the internal temperature is increased to maintain the process atmosphere in the process chamber 11, and preheating is performed by the Ar plasma at the beginning of the process. Done. At this time, it takes a considerable time to heat up to a proper temperature, and this process is repeated every time the process for each wafer is progressed, so that the productivity is not only reduced, but also there are problems such as plasma damage and thermal effects on the device. .

The present invention is to solve the conventional problems as described above, the object of which is to shorten the time required to heat the inside of the process chamber to a suitable temperature to improve the productivity, and to the Ar plasma damage and thermal effects on the device It is to provide a semiconductor chemical vapor deposition apparatus that can prevent damage caused by.

1 is a plan view schematically showing a conventional semiconductor chemical vapor deposition apparatus.

Figure 2 is a plan view schematically showing a chemical vapor deposition apparatus according to the present invention.

Figure 3 is a cross-sectional structural view showing a preheating chamber of the chemical vapor deposition apparatus according to the present invention.

※ Explanation of symbols for main parts of drawing

21: process chamber 22: load lock chamber

23: elevator 24: robot

25: pre-heating chamber 26: heating block

27: heater

The above object is a plurality of process chambers and elevators, a load lock chamber provided between the process chamber and the elevator, a robot installed in the load lock chamber to take the wafer from the cassette placed in the elevator to transfer and convey to the process chamber In the semiconductor chemical vapor deposition apparatus configured, a preheating chamber is installed on one side of the load lock chamber, a heating block which can be transferred up and down in the preheating chamber, and a plurality of wafers are placed on the heating block. It can be achieved by a semiconductor chemical vapor deposition apparatus characterized by having a heater capable of heating.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 2 shows a semiconductor chemical vapor deposition apparatus according to the present invention, the wafer is provided with a plurality of process chambers 21 for performing a process, the process chamber 21 maintains a high vacuum, so the wafer is in a standby state Is transferred to the process chamber 21 in a high vacuum state through the load lock chamber 22.

The load lock chamber 22 is provided with a robot 24 for transferring and conveying wafers. A plurality of elevators 23 are provided outside one side of the load lock chamber 22, and the elevator 23 is provided with a robot 24. A cassette on which a plurality of wafers are loaded is placed.

In addition, one side of the load lock chamber 22 is provided with a pre-heating chamber 25, the heating block 26 is installed in the pre-heating chamber 25 to be movable in the up and down direction, the heating The block 26 has a configuration in which a plurality of heaters 27 are arranged up and down to heat the wafer.

Therefore, when the robot 24 removes the wafer from the cassette placed on the elevator 23 and places it on the heater 27 in the preheating chamber 25, the wafer is preheated by the heater 27, and the preheated wafer The process is performed by removing the robot 24 again and transferring the robot 24 into the process chamber 21. At this time, when the wafer preheated in the preheating chamber 25 is transferred to the process chamber 21 through the load lock chamber 22, the load lock chamber 22 is in a vacuum state, so heat transfer due to conduction can be ignored. The wafer can be transferred to the process chamber 21 while maintaining the preheated state.

The chemical vapor deposition apparatus of the present invention in which the process is performed through this process is supplied with the wafer preheated, so that preheating by the Ar plasma performed at the beginning of the process is not required to maintain the process atmosphere in the process chamber 21. Therefore, the time for raising the temperature inside the process chamber 21 to the process temperature is shortened.

As described above, according to the semiconductor chemical vapor deposition apparatus according to the present invention, the time for raising the temperature inside the process chamber to the process temperature is shortened to improve productivity, and preheating by the Ar plasma performed at the beginning of the process is required. There is an effect that the device damage and thermal damage by the Ar plasma is prevented.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (1)

A semiconductor chemical vapor structure comprising a plurality of process chambers and elevators, a load lock chamber provided between the process chambers and the elevator, and a robot installed in the load lock chamber to take wafers from the cassette placed in the elevator and transfer and transfer the wafers to the process chambers. In the vapor deposition apparatus, A preheating chamber is installed on one side of the load lock chamber, and a heating block for transferring up and down is installed in the preheating chamber, and the heating block is provided with a heater capable of placing and heating a plurality of wafers. A semiconductor chemical vapor deposition apparatus characterized by the above-mentioned.