KR19980037482A - Manufacturing method of liquid crystal display device and liquid crystal display device manufactured by the manufacturing method - Google Patents
Manufacturing method of liquid crystal display device and liquid crystal display device manufactured by the manufacturing method Download PDFInfo
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- KR19980037482A KR19980037482A KR1019960056232A KR19960056232A KR19980037482A KR 19980037482 A KR19980037482 A KR 19980037482A KR 1019960056232 A KR1019960056232 A KR 1019960056232A KR 19960056232 A KR19960056232 A KR 19960056232A KR 19980037482 A KR19980037482 A KR 19980037482A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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Abstract
본 발명의 액정표시장치는 게이트버스라인, 데이터버스라인 및 스위칭소자를 덮는 보호막이 벤조싸이클로부텐(benzocyclobuten:BCB) 등의 유기절연막과 SiNx 등의 무기절연막의 적층구조로 형성되고, 스위칭소자의 드레인전극 부분의 보호막에는 콘택홀이 형성된다. 이 콘택홀을 통하여 스위칭소자의 드레인전극과 연결된 화소전극이 보호막 위에 형성된다.In the liquid crystal display of the present invention, a protective film covering the gate bus line, the data bus line, and the switching element is formed by a lamination structure of an organic insulating film such as benzocyclobuten (BCB) and an inorganic insulating film such as SiNx, and the drain of the switching device. A contact hole is formed in the protective film of the electrode portion. The pixel electrode connected to the drain electrode of the switching element is formed on the passivation layer through the contact hole.
특히 스위칭소자의 드레인전극 부분의 보호막에 형성된 콘택홀은 두번의 공정을 거쳐 형성된다. 즉, BCB막을 도포한 후 1차콘택홀을 형성하고, 이 1차콘택홀이 형성된 BCB막 위에 무기절연막을 증착한 후 1차콘택홀의 직경보다 작은 2차콘택홀을 1차콘택홀 내에 형성한다.In particular, the contact hole formed in the protective film of the drain electrode portion of the switching element is formed through two processes. That is, after applying the BCB film, a primary contact hole is formed, and an inorganic insulating film is deposited on the BCB film on which the primary contact hole is formed, and then a secondary contact hole smaller than the diameter of the primary contact hole is formed in the primary contact hole. .
따라서 본 발명의 액정표시장치는 1차콘택홀을 포함하여 BCB막 전체가 무기절연막으로 덮이고, 이 무기절연막 위에 무기절연막과 열팽창계수가 비슷한 화소전극이 형성되기 때문에 BCB막의 열팽창계수와 화소전극의 열팽창계수의 차이로 발생하는 화소전극의 단선불량을 줄일 수 있다.Therefore, in the liquid crystal display of the present invention, the entire BCB film including the primary contact hole is covered with an inorganic insulating film, and a pixel electrode having a thermal expansion coefficient similar to that of the inorganic insulating film is formed on the inorganic insulating film, so that the thermal expansion coefficient of the BCB film and the thermal expansion of the pixel electrode are formed. The disconnection defect of the pixel electrode caused by the difference in coefficient can be reduced.
Description
본 발명은 액정을 구동하거나 제어하기 위해 스위칭소자가 내장된 액정표시장치의 제조과정에서 스위칭소자와 연결되는 화소전극이 단선되는 불량을 줄이는 것에 관한 것이다. 특히 박막트랜지스터(TFT)를 스위칭소자로 사용하는 액정표시장치에 있어서 TFT 등을 덮는 보호막을 형성하고, TFT와 연결되는 화소전극을 유기물의 보호막 위에 형성할 때 콘택홀 부분에서 집중적으로 발생하는 화소전극의 단선불량으로 인한 point defect(포인트 디팩트)불량을 줄이는 제조방법 및 그 제조방법에 의하여 제조되는 액정표시장치의 구조에 관한 것이다.The present invention relates to reducing the defect of disconnection of the pixel electrode connected to the switching element in the manufacturing process of the liquid crystal display device with a switching element is built in to drive or control the liquid crystal. Particularly, in a liquid crystal display device using a thin film transistor (TFT) as a switching element, a protective film covering a TFT or the like is formed, and when the pixel electrode connected to the TFT is formed on the protective film of an organic material, the pixel electrode intensively occurs in the contact hole portion. The present invention relates to a manufacturing method of reducing point defects due to disconnection defects and a structure of a liquid crystal display device manufactured by the manufacturing method.
종래의 액정표시장치는 도 1과 같이 게이트버스라인(17)은 수평으로 형성되어 있고, 상기 게이트버스라인(17)에서 분기한 게이트전극(17a)이 형성되어 있다.In the conventional liquid crystal display, as shown in FIG. 1, the gate bus lines 17 are horizontally formed, and the gate electrodes 17 a branched from the gate bus lines 17 are formed.
데이터버스라인(15)은 종으로 형성되어 있고, 상기 데이터버스라인(15a)에서 분기한 소스전극(15a)이 형성되어 있다. 상기 소스전극(15a)과 게이트전극(17a)이 교차하는 부분에 TFT(8)가 형성되어 있고, 드레인전극(15b)은 화소전극(4)과 전기적으로 접촉되도록 형성되어 있다.The data bus line 15 is formed vertically, and a source electrode 15a branched from the data bus line 15a is formed. The TFT 8 is formed at a portion where the source electrode 15a and the gate electrode 17a intersect, and the drain electrode 15b is formed to be in electrical contact with the pixel electrode 4.
상기와 같이 형성된 종래 액정표시장치의 단면은 도 1의 II-II선을 따라 절단하여 나타낸 도 2와 같은 구조를 포함한다.The cross section of the conventional liquid crystal display device formed as described above includes the structure as shown in FIG. 2, which is cut along the line II-II of FIG. 1.
상기 도 2는 투명기판(11) 위에 게이트버스라인에서 분기하는 게이트전극(17a)이 형성되어있다. 상기 게이트전극(17a)층 위에는 절연성을 향상시키고 힐락(hillock)을 방지하기 위하여 양극산화막(35)이 형성되어 있다. 상기 게이트전극(17a)이 형성된 투명기판(11) 위에 SiNx, SiOx 등의 무기절연막으로 된 게이트절연막(23)이 형성되어 있다. 상기 게이트전극(17a) 부분의 게이트절연막(23) 위에 비정질실리콘(이하 a-Si라칭한다)등으로 된 반도체층(22)이 형성되어 있다. 상기 반도체층(22)위에 오믹접촉층(25)이 형성되어 있다. 상기 오믹접촉층(25)과 접촉되도록 데이터버스라인(15)에서 분기하는 소스전극(15a)과 드레인전극(15b)이 소정의 간격을 두고 형성되어 있다. 상기 소스/드레인전극(15a,15b)을 덮도록 BCB등의 유기절연막으로 된 보호막(26)이 형성되어 있다. 상기 드레인전극 부분의 콘택홀(31)을 통하여 드레인전극(15b)과 접촉되는 화소전극(4)이 보호막(26) 위에 형성되어 있다.In FIG. 2, a gate electrode 17a branching from a gate bus line is formed on the transparent substrate 11. An anodization layer 35 is formed on the gate electrode 17a layer in order to improve insulation and prevent hillock. A gate insulating film 23 made of an inorganic insulating film such as SiNx or SiOx is formed on the transparent substrate 11 on which the gate electrode 17a is formed. A semiconductor layer 22 made of amorphous silicon (hereinafter referred to as a-Si) or the like is formed on the gate insulating film 23 in the gate electrode 17a portion. An ohmic contact layer 25 is formed on the semiconductor layer 22. The source electrode 15a and the drain electrode 15b branching from the data bus line 15 are formed at predetermined intervals so as to contact the ohmic contact layer 25. A protective film 26 made of an organic insulating film such as BCB is formed to cover the source / drain electrodes 15a and 15b. The pixel electrode 4, which is in contact with the drain electrode 15b through the contact hole 31 of the drain electrode portion, is formed on the passivation layer 26.
상기 보호막(26)은 낮은 유전율을 갖고, 기판면을 평탄화할 수 있는 유기절연막(BCB) 등을 사용하여 보호막 위에 형성되는 화소전극을 데이터버스라인 등에 중첩함으로써 고개구율의 액정표시장치를 구성할 수 있고, 또한 이로 인하여 화소전극의 전압왜곡현상 및 크로스토크현상은 발생하지 않는다.The passivation layer 26 has a low dielectric constant and a high aperture ratio liquid crystal display device may be formed by superimposing a pixel electrode formed on the passivation layer on a data bus line or the like by using an organic insulating layer (BCB) or the like that can planarize the substrate surface. Also, due to this, voltage distortion and crosstalk phenomenon of the pixel electrode do not occur.
그런데 도 2와 같이 구성되는 종래의 액정표시장치는 유기절연막으로 된 보호막 위에 화소전극이 되는 투명전극 즉, 예를 들어 ITO막을 패터닝하면 유기절연막과 ITO막의 밀착성이 나쁘기 때문에 ITO막이 박리되는 불량이 일어난다. 또한, 유기절연막(BC)의 열팽창계수(50~60 ppm/℃)와 ITO막의 열팽창계수(5~7 ppm/℃)의 차이 때문에 도 2의 콘택홀(31)의 A부분에서 집중적으로 ITO막의 단선이 발생한다. 상기 ITO막의 단선불량은 액정표시장치를 완성하였을 때 화면의 점결함의 원인이 된다.However, in the conventional liquid crystal display device configured as shown in FIG. 2, when the transparent electrode serving as the pixel electrode, that is, the ITO film is patterned on the passivation film made of the organic insulating film, for example, the adhesion between the organic insulating film and the ITO film is poor, resulting in a defect that the ITO film is peeled off. . In addition, due to the difference between the thermal expansion coefficient (50 to 60 ppm / ° C.) of the organic insulating film BC and the thermal expansion coefficient (5 to 7 ppm / ° C.) of the ITO film, the ITO film is concentrated in the A portion of the contact hole 31 of FIG. 2. Disconnection occurs. The disconnection defect of the ITO film may cause defects on the screen when the liquid crystal display device is completed.
본 발명은 상기와 같은 문제점을 해결하기 위하여 게이트버스라인, 데이터버스라인 및 스위칭소자를 덮는 보호막을 유기절연막인 벤조싸이클로부텐(benzocyclobuten:BCB)와 무기절연막인 SiNx(열팽창계수:5~7 ppm/℃) 등의 적층구조로 형성하고, 상기 스위칭소자의 드레인전극 부분의 보호막에 형성되는 콘택홀은 두번의 공정을 거쳐 형성한다. 즉, BCB막을 도포한 후 1차콘택홀을 형성하고, 이 1차콘택홀이 형성된 BCB막 위에 무기절연막을 증착한 후 1차콘택홀의 직경보다 작은 2차콘택홀을 형성한다. 상기와 같이 보호막과 콘택홀을 형성함으로써 ITO막이 박리되는 불량을 줄일 수 있고, 콘택홀 부분에서 집중적으로 발생하는 ITO막의 단선불량을 방지할 수 있다.In order to solve the above problems, the present invention provides a protective film covering the gate bus line, the data bus line, and the switching element, benzocyclobuten (BCB), which is an organic insulating film, and SiNx (coefficient of thermal expansion: 5-7 ppm /, an inorganic insulating film). And a contact hole formed in the protective film of the drain electrode portion of the switching element through two steps. That is, after the BCB film is applied, a primary contact hole is formed, and an inorganic insulating film is deposited on the BCB film on which the primary contact hole is formed, and then a secondary contact hole smaller than the diameter of the primary contact hole is formed. By forming the protective film and the contact hole as described above, the defect that the ITO film is peeled off can be reduced, and the disconnection defect of the ITO film that occurs intensively in the contact hole part can be prevented.
도 1은 종래의 액정표시장치의 평면도이고,1 is a plan view of a conventional liquid crystal display device;
도 2는 종래의 액정표시장치의 단면도이고,2 is a cross-sectional view of a conventional liquid crystal display device;
도 3은 본 발명의 액정표시장치의 단면도이고,3 is a cross-sectional view of the liquid crystal display device of the present invention;
도 4a ~ 도 4h는 본 발명의 제조공정도이다.4A to 4H are manufacturing process diagrams of the present invention.
본 발명의 액정표시장치는 게이트버스라인, 데이타버스라인 및 스위칭소자를 포함하여 덮는 보호막은 제1절연막과 제2절연막이 적층되어 있고, 상기 보호막을 관통하는 콘택홀은 그 측면이 제2절연막으로 덮여있고, 상기 콘택홀을 통하여 상기 스위칭소자와 연결되며 상기 제2절연막 위에 형성된 화소전극을 포함하도록 구성되어 있다.In the liquid crystal display of the present invention, a protective film covering a gate bus line, a data bus line, and a switching element has a first insulating film and a second insulating film laminated thereon, and a contact hole penetrating through the protective film has a side surface thereof as a second insulating film. The pixel electrode is covered and connected to the switching device through the contact hole, and includes a pixel electrode formed on the second insulating layer.
이에 대한 구조를 도 3에 나타냈다. 상기 도 3의 104는 화소전극, 111은 투명기판, 115는 데이터버스라인, 115a는 소스전극, 115b는 드레인전극, 117a는 게이트전극, 122는 반도체층, 125는 오믹접촉층, 126a는 유기절연막으로 된 보호막, 126b는 무기막으로 된 보호막, 131은 콘택홀, 135는 양극산화막이다.The structure thereof is shown in FIG. 3. 3 is a pixel electrode, 111 is a transparent substrate, 115 is a data bus line, 115a is a source electrode, 115b is a drain electrode, 117a is a gate electrode, 122 is a semiconductor layer, 125 is an ohmic contact layer, and 126a is an organic insulating film 126b is an inorganic film, 131 is a contact hole, and 135 is an anodized film.
상기와 같이 구성된 액정표시장치는 유기절연막과 화소전극 사이에 무기절연막을 형성함으로써 화소전극의 밀착성이 좋아지고, 화소전극의 박리가 방지된다.In the liquid crystal display device configured as described above, the inorganic insulating film is formed between the organic insulating film and the pixel electrode to improve the adhesion between the pixel electrodes, and the peeling of the pixel electrode is prevented.
또한, 화소전극을 구성하는 ITO막과 열팽창계수가 비슷한 SiNx등의 무기절연막이 유기절연막 위에 형성되기 때문에 종래의 콘택홀 부분에서 많이 발생하는 ITO막의 단선불량을 방지할 수 있다.In addition, since an inorganic insulating film such as SiNx having a thermal expansion coefficient similar to that of the ITO film constituting the pixel electrode is formed on the organic insulating film, it is possible to prevent the disconnection defect of the ITO film that is frequently generated in the conventional contact hole portion.
상기 보호막 126a는 폴리이미드(Polyimide:PI)계 수지막, 아크릴(acrylic)계 수지막, 또는 페놀(phenol), 폴리에스테르(polyester), 실리콘(sillicon), 아크릴(acrylic), 우레탄(urethane) 등의 열경화성 수지, 폴리카보네이트(polycarbonate), 폴리에틸렌(polyethylene), 폴리스틸렌(polystyrene) 등의 열가소성 수지를 사용할 수 있으며, 아래 표1-1의 벤조싸이클로부텐(benzocyclobuten:BCB), F첨가 폴리이미드(polyimide:PI)등의 유기절연막과, 퍼플로오르사이클로부텐(perfluorocy-clobutane:PFCB), 플로오르사이클로부텐(Fluoropolyallylehter:FPAE), 등의 유기절연막을 사용할 수 있다.The protective layer 126a may be a polyimide (PI) -based resin film, an acrylic resin film, or a phenol, polyester, silicone, acrylic, urethane, or the like. Thermosetting resin, polycarbonate, polyethylene, polystyrene, and other thermoplastic resins may be used, and benzocyclobuten (BCB) and F-added polyimide of Table 1-1 below may be used. Organic insulating films, such as PI), and organic insulating films, such as perfluorocyclobutane (PFCB) and fluorocyclobutene (FPAE), can be used.
[표 1-1]Table 1-1
본 발명에서 보호막 126a는 하나의 예로 벤조싸이클로부텐(benzocyclobuten:BCB)을 사용하였다.In the present invention, the protective layer 126a uses benzocyclobuten (BCB) as an example.
이하 실시예에서 본 발명의 액정표시장치의 제조방법에 대하여 상세히 설명한다.Hereinafter, a method of manufacturing the liquid crystal display device of the present invention will be described in detail.
실시예Example
본 발명의 액정표시장치의 제조과정을 도 4a~4h의 제조공정 단면도 및 도 3에 의하여 설명한다.A manufacturing process of the liquid crystal display of the present invention will be described with reference to the manufacturing process sectional view of FIGS. 4A to 4H and FIG. 3.
먼저 투명기판(111) 위에 Al(알루미늄)금속막 등을 증착하고, 상기 금속막 위에 포토레지스트를 도포하고, 상기 포토레지스트를 소정의 패턴이 되도록 현상하고, 상기 현상된 패턴에 따라 금속막을 웨트(wet)에칭 등의 방법으로 에칭하여 게이트버스라인에서 분기하는 게이트전극(117a)을 형성한다. 게이트전극(117a)은 단차를 개선하기 위하여 테이퍼진 형태로 형성하는 것이 바람직하다(도 4a).First, an Al (aluminum) metal film or the like is deposited on the transparent substrate 111, a photoresist is applied on the metal film, the photoresist is developed to a predetermined pattern, and the metal film is wetted according to the developed pattern. The etching is performed by wet etching or the like to form a gate electrode 117a branching from the gate bus line. The gate electrode 117a is preferably formed in a tapered form to improve the level difference (Fig. 4A).
이어서 절연성을 향상시키고 힐락을 방지하기 위하여 게이트전극(117a) 등에 양극산화막(135)을 형성한다(도 4b).Subsequently, an anodization film 135 is formed on the gate electrode 117a and the like in order to improve insulation and prevent hillock (FIG. 4B).
상기 공정에 이어서 게이트절연막(123)이 되는 SiNx, SiOx 등의 무기절연막과 반도체층(122)이 되는 a-Si층과 오믹접촉층(125)이 되는 n+형 a-Si층을 연속 증착하여 적층한다(도 4c).Subsequently, an inorganic insulating film such as SiNx or SiOx, which becomes the gate insulating film 123, and an a-Si layer serving as the semiconductor layer 122 and an n + type a-Si layer serving as the ohmic contact layer 125 are successively deposited. Lamination (FIG. 4C).
이어서 상기 n+형 a-Si층 위에 포토레지스트를 도포하고 상기 포토레지스트를 소정의 패턴이 되도록 현상하고 상기 현상된 패턴에 따라 n+형 a-Si층과 a-Si층을 동시에 에칭하여 오믹접촉층(125)과 반도체층(122)을 형성한다(도 4d).Subsequently, a photoresist is applied on the n + type a-Si layer, the photoresist is developed to a predetermined pattern, and the n + type a-Si layer and the a-Si layer are simultaneously etched according to the developed pattern. A layer 125 and a semiconductor layer 122 are formed (FIG. 4D).
이어서 Cr 또는 Al금속막 등을 기판의 전체면에 스퍼터링법 등으로 증착하고, 상기 금속막 위에 포토레지스트를 도포하고, 상기 포토레지스트를 소정의 패턴이 되도록 현상하고, 상기 현상된 패턴에 따라 금속막을 에칭하여 데이타버스라인(115)에서 분기하는 소스전극(115a)과 드레인전극(115b)을 형성한다. 상기 형성된 소스전극(115a) 및 드레인전극(115b)을 마스크로 사용하여 소스·드레인전극 사이의 n+형 a-Si층을 제거한다(도 4e).Subsequently, a Cr or Al metal film or the like is deposited on the entire surface of the substrate by a sputtering method or the like, a photoresist is applied on the metal film, the photoresist is developed to a predetermined pattern, and the metal film is formed in accordance with the developed pattern. By etching, the source electrode 115a and the drain electrode 115b branching from the data bus line 115 are formed. Using the formed source electrode 115a and the drain electrode 115b as a mask, the n + type a-Si layer between the source and drain electrodes is removed (FIG. 4E).
이어서 보호막(126a)이 되는 벤조싸이클로부텐(benzocyclobuten:BCB)을 기판의 전면에 도포하고, 상기 보호막(126a) 위에 포토레지스트를 도포하고, 상기 포토레지스트를 소정의 패턴이 되도록 현상하고, 상기 현상된 패턴에 따라 보호막(126a)을 에칭하여 1차콘택홀(130)을 형성한다(도 4f). 상기 1차콘택홀(130)은 드레인전극(115b) 부분에 형성된다. 상기 보호막(126a)이 감광성BCB인 경우에는 포토레지스트 공정을 생략하고, 마스크를 사용하여 1차콘택홀(130)을 형성할 수 있다.Subsequently, a benzocyclobuten (BCB) serving as a protective film 126a is coated on the entire surface of the substrate, a photoresist is applied on the protective film 126a, and the photoresist is developed to have a predetermined pattern. The protective film 126a is etched according to the pattern to form the primary contact hole 130 (FIG. 4F). The primary contact hole 130 is formed in the drain electrode 115b. When the passivation layer 126a is a photosensitive BCB, the photoresist process may be omitted, and the primary contact hole 130 may be formed using a mask.
상기 보호막(126a)은 무기절연막에 비하여 작은 유전율을 갖고 있다. 따라서 이후의 공정에서 형성되는 화소전극과 상기 데이타버스라인 등이 중첩하는 부분에서 전기용량이 작아지기 때문에 리크전류로 인한 전압왜곡현상 및 크로스토크현상이 발생하지 않는다. 그러나 보호막(126a)으로 무기절연막을 사용하면 무기절연막의 유전율이 크기 때문에 데이터버스라인 부분의 전기 용량이 커진다.The protective film 126a has a smaller dielectric constant than the inorganic insulating film. Therefore, since the capacitance becomes small at the overlapping portion of the pixel electrode and the data bus line formed in a subsequent process, voltage distortion and crosstalk due to the leakage current do not occur. However, when the inorganic insulating film is used as the protective film 126a, the dielectric constant of the inorganic insulating film is large, so that the capacitance of the data bus line portion is increased.
이 전기용량이 크면 클수록 화소전극의 전압왜곡현상 및 크로스토크현상은 커진다.The larger the capacitance, the greater the voltage distortion and crosstalk of the pixel electrode.
그러나 본 발명은 유전율이 작은 유기절연막을 보호막(126a)으로 사용하기 때문에 전압왜곡현상 및 크로스토크현상은 발생하지 않는다. 또한 상기 보호막(126a)은 기판면을 평탄화 할 수 있어서 셀겝(cell gap)을 균일하게 하는데 유리하며, 배향막의 러빙공정에서 불량이 발생하지 않는다.However, in the present invention, since the organic insulating film having a small dielectric constant is used as the protective film 126a, voltage distortion and crosstalk phenomenon do not occur. In addition, the passivation layer 126a may flatten the surface of the substrate, which is advantageous in making the cell gap uniform, and no defect occurs in the rubbing process of the alignment layer.
따라서 상기 보호막(126a)은 고개율의 액정표시장치를 제조하고, 셀겝(cell gap)을 균일하게 하는데 유리하기 때문에 사용된 것이다.Therefore, the protective film 126a is used because it is advantageous to manufacture a liquid crystal display device having a high opening ratio and to uniform the cell gap.
이어서 보호막(126b)이 되는 SiNx, SiOx 등의 무기절연막을 1차콘택홀이 형성된 보호막(126a)위에 증착하고, 상기 증착된 보호막(126b) 위에 포토레지스트를 도포하고, 상기 포토레지스트를 소정의 패턴이 되도록 현상하고, 상기 현상된 패턴에 따라 보호막(126b) 에칭하여 2차콘택홀(131)을 형성한다(도 4g). 상기 2차콘택홀(131)은 1차콘택홀(130)의 직경보다 작도록 1차콘택홀(130) 내에 형성하여 1차콘택홀(130)의 측면에 증착된 무기절연막이 제거되지 않도록 한다.Subsequently, an inorganic insulating film such as SiNx or SiOx, which becomes the protective film 126b, is deposited on the protective film 126a having the primary contact hole, a photoresist is applied on the deposited protective film 126b, and the photoresist is formed in a predetermined pattern. The secondary contact hole 131 is formed by etching the protective film 126b according to the developed pattern (FIG. 4G). The secondary contact hole 131 is formed in the primary contact hole 130 to be smaller than the diameter of the primary contact hole 130 so that the inorganic insulating film deposited on the side of the primary contact hole 130 is not removed. .
이어서 보호막(126b) 위에 ITO(Indium Tin Oxide)을 증착하고, 사진식각 공정으로 상기 ITO막을 패터닝하여 화소전극(104)을 형성한다(도 4h). 상기 화소전극은 이미 설명한 것처럼 스위칭소자의 드레인전극(115b)과 접촉되며, 데이터버스라인 등에 중첩하여 형성할 수 있다.Subsequently, indium tin oxide (ITO) is deposited on the passivation layer 126b, and the ITO layer is patterned by a photolithography process to form a pixel electrode 104 (FIG. 4H). As described above, the pixel electrode may be in contact with the drain electrode 115b of the switching device and may overlap the data bus line.
상기와 같이 보호막(126a) 위에 무기절연막으로 된 보호막(126b)을 형성하는 이유는 BCB막과 ITO막이 서로 밀착성이 나쁘기 때문에 ITO막이 박리되지 않도록 하기 위해서이다. 또한, 유기절연막(BCB)의 열팽창계수(50~60 ppm/℃)와 ITO막의 열팽창계수(5~7 ppm/℃)의 차이 때문에 도 2의 콘택홀(31)의 A부분에서 집중적으로 발생하는 ITO막의 단선불량을 줄이기 위해서이다. 상기 ITO막의 열팽창계수는 무기절연막인 SiNx, SiOx 등의 열팽창계수와 비슷하다.The reason why the protective film 126b made of the inorganic insulating film is formed on the protective film 126a as described above is to prevent the ITO film from peeling off because the BCB film and the ITO film have poor adhesion to each other. In addition, due to the difference between the thermal expansion coefficient (50 to 60 ppm / ° C.) of the organic insulating film (BCB) and the thermal expansion coefficient (5 to 7 ppm / ° C.) of the ITO film, it occurs intensively in the A portion of the contact hole 31 of FIG. 2. This is to reduce the disconnection defect of the ITO membrane. The thermal expansion coefficient of the ITO film is similar to that of the inorganic insulating film SiNx, SiOx, and the like.
본 발명의 액정표시장치는 게이트버스라인, 데이타버스라인 및 스위칭소자를 포함하여 덮는 보호막을 BCB막과 무기절연막의 적층구조로 형성하고, 상기 보호막에 형성되는 콘택홀의 측면이 무기절연막으로 덮이도록 형성하는 것을 특징으로 한다.In the liquid crystal display of the present invention, a protective film including a gate bus line, a data bus line, and a switching element is formed in a stacked structure of a BCB film and an inorganic insulating film, and the side surface of the contact hole formed in the protective film is covered with an inorganic insulating film. Characterized in that.
상기와 같은 특징을 갖는 본 발명의 액정표시장치는 화소전극을 열팽창계수가 비슷한 무기절연막 위에 형성하기 때문에 종래의 유기절연막 한층만을 보호막으로 사용할 때 발생하는 화소전극의 단선불량을 방지할 수 있다. 또한, ITO로 된 화소전극과 SiNx, SiOx 등의 무기절연막은 서로 밀착성이 좋기 때문에 ITO로 된 화소전극이 박리되는 불량을 줄일 수 있다.The liquid crystal display device according to the present invention having the above characteristics can prevent the disconnection of the pixel electrode generated when only one organic insulating film is used as the protective film because the pixel electrode is formed on the inorganic insulating film having a similar thermal expansion coefficient. In addition, since the ITO pixel electrode and the inorganic insulating films such as SiNx and SiOx have good adhesion to each other, defects in which the ITO pixel electrode is peeled off can be reduced.
따라서 본 발명의 액정표시장치의 제조방법은 고개구율의 특성을 살리면서도 화소전극의 단선 불량으로 인한 화면의 점결함 불량을 줄일는 효과가 있다.Therefore, the manufacturing method of the liquid crystal display device of the present invention has the effect of reducing the defects of the screen defect caused by the disconnection of the pixel electrode while maintaining the characteristics of high opening ratio.
본 발명의 목적은 유기절연막을 보호막으로 사용할 때 콘택홀 부분에서 집중적으로 발생하는 ITO로 된 화소전극의 단선불량을 줄이는데 있다.An object of the present invention is to reduce the disconnection defect of the pixel electrode of ITO intensively generated in the contact hole when the organic insulating film is used as a protective film.
본 발명의 다른 목적은 화소전극을 패터닝할 때 화소전극이 박리되는 불량을 줄이는데 있다.Another object of the present invention is to reduce the defect that the pixel electrode is peeled off when patterning the pixel electrode.
본 발명의 또 다른 목적은 고개구율의 액정표시장치를 제공하는데 있다.Another object of the present invention is to provide a liquid crystal display device having a high opening ratio.
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KR20020022570A (en) * | 2000-09-20 | 2002-03-27 | 가나이 쓰토무 | Liquid crystal display device |
KR100344206B1 (en) * | 1997-03-07 | 2002-07-22 | 가부시끼가이샤 도시바 | Method for manufacturing array substrate and method for manufacturing lcd device |
KR100470020B1 (en) * | 2001-06-01 | 2005-02-04 | 엘지.필립스 엘시디 주식회사 | A Transflective LCD and method for fabricating thereof |
KR100675639B1 (en) * | 2004-08-30 | 2007-02-02 | 엘지.필립스 엘시디 주식회사 | Fabrication method of organic thin film transistor and liquid crystal display device |
US7196745B2 (en) | 2003-09-02 | 2007-03-27 | Sharp Kabushiki Kaisha | Active element substrate with simplified signal line arrangement having active elements and pixel electrodes and liquid crystal display device using the same |
KR100965588B1 (en) * | 2003-06-30 | 2010-06-23 | 엘지디스플레이 주식회사 | Method for fabricating liquid crystal display device |
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JP4431081B2 (en) | 2004-08-30 | 2010-03-10 | エルジー ディスプレイ カンパニー リミテッド | Method for manufacturing organic thin film transistor and method for manufacturing liquid crystal display element |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100344206B1 (en) * | 1997-03-07 | 2002-07-22 | 가부시끼가이샤 도시바 | Method for manufacturing array substrate and method for manufacturing lcd device |
KR20020022570A (en) * | 2000-09-20 | 2002-03-27 | 가나이 쓰토무 | Liquid crystal display device |
KR100470020B1 (en) * | 2001-06-01 | 2005-02-04 | 엘지.필립스 엘시디 주식회사 | A Transflective LCD and method for fabricating thereof |
KR100965588B1 (en) * | 2003-06-30 | 2010-06-23 | 엘지디스플레이 주식회사 | Method for fabricating liquid crystal display device |
US7196745B2 (en) | 2003-09-02 | 2007-03-27 | Sharp Kabushiki Kaisha | Active element substrate with simplified signal line arrangement having active elements and pixel electrodes and liquid crystal display device using the same |
US7440039B2 (en) | 2003-09-02 | 2008-10-21 | Sharp Kabushiki Kaisha | Active element substrate with simplified signal line arrangement having active elements and pixel electrodes and liquid crystal display device using the same |
KR100675639B1 (en) * | 2004-08-30 | 2007-02-02 | 엘지.필립스 엘시디 주식회사 | Fabrication method of organic thin film transistor and liquid crystal display device |
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