KR19980022880A - Manufacturing method of AI victim layer of FED device - Google Patents

Abstract

The present invention provides an Al sacrificial layer of an FED device capable of forming a uniform Al sacrificial layer by etching and lift-off of a photoresist to form an Al sacrificial layer by a spindt type metal FED process. A method for forming an Al sacrificial layer of an FED device, comprising: coating a photoresist 15 on a gate electrode 14 having holes 9 formed thereon; Etching the photoresist 15 until the gate electrode 14 is exposed in the hole 9 by partial etching, and depositing the Al sacrificial layer 16 on the etched photoresist 15 by sputtering. After the step of removing the photoresist 15 can be obtained a uniform Al sacrificial layer has an excellent reproducibility effect.

Description

Manufacturing method of Al victim layer of FED device

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a field-EMISSION DISPLAY (FED), in particular a process of spind type metal FED, which is uniform Al sacrificial layer by etching and lift-off of photoresist using self alignment. The present invention relates to a method for manufacturing an Al sacrificial layer of the FED apparatus capable of forming a metal.

The FED emits electrons from the emitter tip and impinges on the fluorescent material of the anode, in which the transparent conductive film is formed, and uses the light generated by the stimulus when the fluorescent material is stimulated to excite and transition the outermost electrons of the phosphor As a field emission device that displays a desired image, it has the advantage of expressing high-resolution and high-brightness color patterns with a minimum of power, and can replace other display devices such as cathode ray tubes and liquid crystal displays (LCDs). Is going on.

Conventionally, as shown in FIG. 1, a cathode electrode 2 is laid on a substrate 1 and a gate insulating layer 3 is applied thereon as one of the processes for fabricating an FED device, and then the gate electrode 4 is applied. After the formation, the gate electrode 4 is partially removed by the exposure of the electron beam, and the gate insulating layer 3 is isotropically etched, and then an Al sacrificial layer is applied to form the conical metal tip thereon. As a result, Al sacrificial layer 7 has been gradient deposited.

However, when the Al sacrificial layer 7 is inclinedly deposited by E-BEAM deposition as described above, the formed surface layer forming the Al sacrificial layer having a large area is not uniform, and thus the edge shape and the hole ( There arises a problem that there is no uniformity such as the size of 8).

In addition, since the Al sacrificial layer is not uniformly applied when using the gradient deposition method to form the Al sacrificial layer, the uniformity worsens as the size of the substrate increases, and there is a problem in reproducibility.

Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide an Al sacrificial layer using a photoresist to form a uniform Al sacrificial layer of etching and lift-off. It is to provide a method for producing a sacrificial layer.

1 is a view showing a state coated on a gate electrode of a conventional FED device.

Figures 2a to 2c is a view showing the step of producing the Al sacrificial layer of the present invention.

Explanation of symbols for main parts of the drawings

9: hole 14: gate electrode

15: Photoresist 16: Al Sacrifice

In order to achieve the above object, the manufacturing method of the Al sacrificial layer of the FED device of the present invention is a method of forming an Al sacrificial layer of the FED device, the step of coating a photoresist on the gate electrode formed hole, The photoresist is etched until the gate electrode is exposed in the hole by partial etching of the resist, and the photoresist is removed after the Al sacrificial layer is deposited by sputtering on the etched photoresist.

With reference to the accompanying drawings a manufacturing method of the Al Al sacrificial layer of the FED device of the present invention configured as described above will be described in detail.

2A to 2C are diagrams showing the steps for producing the Al sacrificial layer of the present invention.

In the manufacturing of the FED device, as shown in FIG. 2A, the gate insulating layer 13 is laid on the upper side of the cathode electrode 12 on the substrate 10, and the hole is formed on the substrate 10. The photoresist 15 is coated on the gate electrode 14 on which the 19 is formed.

As shown in FIG. 2B, the photoresist 15 coated on the gate electrode 14 is partially exposed until the gate electrode 14 is exposed in the hole 9 formed in the metal tip. Etch 15).

After the Al sacrificial layer 16 is deposited on the etched photoresist 15 by the sputtering method, as shown in FIG. 2C, the torges 15 remaining in the hole 19 are removed. 19) Al sacrificial layer formed inside is also removed.

The Al sacrificial layer of the present invention uses the photoresist to etch the Al layer by the sputtering method using an etching process and a lift-off, so even Al sacrificial layer is used even for a large-area substrate. It has an excellent effect on the reproducibility of obtaining a layer.

Claims (2)

A method of forming an Al sacrificial layer of an FED device, comprising: coating a photoresist 15 on a gate electrode 14 having a hole 19 formed therein; Etching the photoresist 15 by partially etching the photoresist 15 until the gate electrode 14 is exposed in the hole 9; And removing the photoresist (15) after the deposition of the Al sacrificial layer (16) by the sputtering method on the etched photoresist (15). The method of claim 1, wherein the Al sacrificial layer (16) is deposited by E-BEAM.