KR19980021867U - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing device Download PDFInfo
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- KR19980021867U KR19980021867U KR2019960035189U KR19960035189U KR19980021867U KR 19980021867 U KR19980021867 U KR 19980021867U KR 2019960035189 U KR2019960035189 U KR 2019960035189U KR 19960035189 U KR19960035189 U KR 19960035189U KR 19980021867 U KR19980021867 U KR 19980021867U
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- gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
Abstract
본 고안은 퍼난스의 도어 및 래어 양쪽에 가스를 주입하는 씨브이드 장치에 관한 것이며, 종래의 씨브이디 장치는 퍼난스의 가스가 주입되는 래어쪽과 가스가 주입되지 않는 도어쪽에 장착된 웨이퍼 위에 원하는 층이 증착되는 비율이 다른 문제점과, 원하는 층에 불순물 원자가 균일하게 도핑되지 않는 문제점이 있었다. 이와같은 문제점을 감안한 본 고안 퍼난스의 래어 및 도어 양쪽에 가스를 주입시키고, 가스주입구를 사용하여 주입되는 가스를 퍼난스의 안쪽까지 균일하게 주입하는 특징이 있다. 이와같은 특징의 본 고안은 퍼난스의 래어쪽과 도어쪽에 장착된 실리콘 웨이퍼 위에 원하는 층이 증착되는 비율이 같으며, 균일한 비율로 도핑된 원하는 측을 얻을 수 있는 효과가 있다.The present invention relates to a seed device for injecting gas into both the door and the lair of the furnace, and the conventional seed device is a wafer mounted on the rare side to which the gas of the furnace is injected and the door side to which the gas is not injected. There was a problem that the ratio of the desired layer is deposited on the above, and that the impurity atoms are not uniformly doped in the desired layer. In consideration of such a problem, the gas is injected into both the rare and the door of the present invention, and the gas injected using the gas inlet is uniformly injected to the inside of the furnace. The present invention of the above characteristics has the same ratio of depositing a desired layer on the silicon wafer mounted on the rare side and the door side of the furnace, and has the effect of obtaining the desired side doped at a uniform ratio.
Description
본 고안은 반도체 제조장치에 관한 것으로, 특히 퍼난스(furnance)의 도어(door) 및 래어(rear) 양쪽에 가스를 주입하는 씨브이디(chemical Vapor Deposition) 장치에 관한 것이다.The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a chemical vapor deposition apparatus for injecting gas into both a door and a rear door of a furnace.
종래의 씨브이디 장치는 도 1에 도시된 바와같이, 다수의 가열 코일(1a)을 구비하여 각 부분별로 온도의 조절이 가능한 퍼난스(1)와, 상기 퍼난스(1)의 래어(8)쪽에 연결되어 퍼난스(1)의 압력에 따라 개패되는 자동 압력 제어 밸브(2)와, 상기 자동 압력 제어 밸브(2)를 통해 퍼난스(1) 내의 가스를 외부로 배출하는 배기펌프(3)와 ; 상기 퍼난스(1)의 래어(8)쪽에 각각의 가스 소스(4), (5)를 연결하는 가스라인(6)으로 구성되며, 이와같이 구성된 씨브이디 장치의 동작을 실리콘 웨이퍼 위에 불순물 원자가 도핑된 다결정 실리콘층을 증착시키는 방법을 예로하면 설명하면 다음과 같다.As shown in FIG. 1, the conventional CD device includes a plurality of heating coils 1a and a furnace 1 capable of adjusting temperature for each part, and a lair 8 of the furnace 1. And an exhaust pump 3 which discharges the gas in the furnace 1 to the outside through the automatic pressure control valve 2 connected to the side) and opened in accordance with the pressure of the furnace 1. )Wow ; The gas line 6 connects each of the gas sources 4 and 5 to the lair 8 side of the furnace 1, and the impurity atoms are doped on the silicon wafer to operate the CD device. Referring to the method of depositing the polycrystalline silicon layer as an example as follows.
먼저, 피난스(1)내에 실리콘 웨이퍼(7)를 장착하고, 퍼난스(1)내에 있는 기체를 배기펌프(3)를 사용하여 외부로 배기시켜 다결정 실리콘층 내에 원하지 않는 불순물 원자가 도핑되는 것을 방지한다.First, the silicon wafer 7 is mounted in the financing 1, and the gas in the financing 1 is exhausted to the outside using the exhaust pump 3 to prevent the doping of unwanted impurity atoms in the polycrystalline silicon layer. do.
그 다음, 가열 코일(1a)를 사용하여 퍼난스(1)내를 씨브이디법으로 다결정 실리콘층을 형성시키기에 적합한 온도로 유지시킨다.Then, the heating coil 1a is used to maintain the inside of the furnace 1 at a temperature suitable for forming the polycrystalline silicon layer by the CD method.
그 다음, 사일렌(SiH4) 및 도판트 가스를 사일렌 소스(4) 및 도판트 가스 소스(5)의 가스밸브(11), (11a)를 열어줌으로써, 사일렌과 도판트가스가 퍼나스(1)의 래어(8)쪽에 연결된 가스라인(6)을 통하여 퍼난스(1)의 내부로 주입된다. 이때 퍼난스(1)의 내부로 주입되는 가스의 양이 많은 경우, 자동 압력 제어 밸브(2)가 열리고, 배기펌프(3)에 의해 퍼난스(1) 밖으로 배기된다.Subsequently, by opening the gas valves 11 and 11a of the silene source 4 and the dopant gas source 5, the silene and the dopant gas are furnaces. It is injected into the furnace 1 through the gas line 6 connected to the rare 8 side of (1). At this time, when the amount of gas injected into the furnace 1 is large, the automatic pressure control valve 2 is opened and exhausted out of the furnace 1 by the exhaust pump 3.
상기에서 주입된 사일렌과 도판트 가스가 반응하여 퍼난스(1) 내의 실리콘 웨이퍼(7)의 표면에는 불순물 원자로 도핑된 다결정 실리콘층이 증착되며, 반응 후 남은 가스는 자동 압력 제어 밸브(2)를 통한 배기 펌프(3)에 의해 펀난스(1) 밖으로 배기된다.The injected silicon and the dopant gas react with each other to deposit a polycrystalline silicon layer doped with impurity atoms on the surface of the silicon wafer 7 in the furnace 1, and the remaining gas is reacted with the automatic pressure control valve 2. It is exhausted out of the funnel 1 by the exhaust pump 3 through.
그러나, 상기한 종래의 씨브이디 장치는 주입되는 가스의 유량을 조절하기 어렵고, 퍼난스의 가스가 주입되는 래어쪽과 주입되지 않는 도어쪽에 기체의 밀도가 달라 양측에 장착된 웨이퍼에 원하는 층이 증착되는 비율이 다른 문제점과, 원하는 층에 불순물 원자가 균일하게 도핑되지 않는 문제점이 있었다.However, in the conventional CD device, it is difficult to control the flow rate of the injected gas, and the desired layer is formed on the wafer mounted on both sides because the density of the gas is different on the rare side where the gas of the furnace is injected and the non-injected door There are problems of different deposition rates and a problem that impurity atoms are not uniformly doped in a desired layer.
상기한 문제점을 감안한 본 고안은 퍼난스내로 유입되는 가스의 유량을 조절함이 용이하고, 퍼난스내에 균일한 기체 밀도를 유지할 수 있는 씨브이디 장치의 제공을 목적으로 한다.The present invention in view of the above problems is to provide a CD device that can easily control the flow rate of the gas flowing into the furnace, and can maintain a uniform gas density in the furnace.
도 1은 종래의 씨브이디 장치의 구조도.1 is a structural diagram of a conventional CD device.
도 2는 본 고안에 의한 씨브이디 장치의 구조도.2 is a structural diagram of the CD device according to the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
1 : 퍼나스1a : 가열코일1: Furnace 1a: Heating coil
2, 2a : 자동 압력 제어 밸브3, 3a : 배기펌프2, 2a: Automatic pressure control valve 3, 3a: Exhaust pump
4, 4a : 사일렌 소스5, 5a : 도판트 소스4, 4a: Silene source 5, 5a: Dopant source
6, 6a : 가스라인7 : 웨이퍼6, 6a: gas line 7: wafer
8 : 래어9 : 도어8: Rare 9: Door
10 : 가스주입기10 gas injector
상기와 같은 목적은 퍼난스내에 균일하게 가스를 주입하는 가스주입기를 구비하고, 퍼난스의 양쪽에 가스를 주입 함으로써 달성되는 것으로, 첨부한 도면을 참조하여 상세히 설명하면 다음과 같다.The above object is achieved by injecting gas into the furnace uniformly and injecting gas into both sides of the furnace, which will be described in detail with reference to the accompanying drawings.
도 2에 도시된 본 고안에 의한 씨브이디장치의 구성도에서와 같이, 본 고안은 다수의 가열코일(1a)을 구비하여 각 부분별로 온도의 조절이 가능한 퍼난스(1)와 ; 상기 퍼난스(1)의 래어(8)쪽과 도어(9)쪽에 각각 연결되어 펀나스(1)의 압력에 따라 자동으로 개패되는 두개의 자동 압력 제어 밸브(2), (2a)와 ; 상기 자동 압력 제어 밸브(2), (2a)를 통해 상기 퍼난스(1) 내의 가스를 외부로 배기하는 배기펌프(3), (3a)와 ; 실리콘 웨이퍼(7) 위에 원하는 층을 증착시키기 위해 주입되는 가스 소스(4), (4a), (5), (5a) 및 상기 퍼난스(1)의 래어(8)쪽 및 도어(9)쪽에 각각 연결된 가스라인(6), (6a)과 ; 상기 퍼난스(1)의 래어(8)쪽 가스라인(6)에 연결되어 퍼난스(1)의 안쪽까지 균일하게 가스를 주입하는 가스주입기(10)로 구성되며, 이와같이 구성된 씨브이디 장치의 동작을 실리콘 웨이퍼(8) 위에 불순물 원자가 도핑된 다결정 실리콘층을 증착하는 방법을 예로하여 설명하면 다음과 같다.As in the configuration diagram of the CD device according to the present invention shown in Figure 2, the present invention is provided with a plurality of heating coil (1a) and the furnace (1) capable of adjusting the temperature for each part; Two automatic pressure control valves (2) and (2a) connected to the lower (8) side and the door (9) side of the furnace (1) and automatically opened and closed according to the pressure of the funnas (1); Exhaust pumps (3) and (3a) for exhausting the gas in the furnace (1) to the outside through the automatic pressure control valves (2) and (2a); Gas source 4, 4a, 5, 5a and the ladle 8 side of the furnace 1 and the door 9 side which are injected to deposit the desired layer on the silicon wafer 7 Gas lines 6 and 6a connected to each other; It is composed of a gas injector 10 connected to the gas line 6 on the side of the furnace 8 of the furnace 1 and uniformly injects gas to the inside of the furnace 1. The operation will be described by way of example as a method of depositing a polycrystalline silicon layer doped with an impurity atom on the silicon wafer 8 as an example.
먼저, 실로콘 웨이퍼(7)를 퍼난스(1) 내에 수직으로 장착하고, 퍼난스(1) 내의기체를 배기펌프(3), (3a)를 사용하여 래어(8)쪽과 도어(9)쪽으로 배기시킨다.First, the xylocon wafer 7 is mounted vertically in the furnace 1, and the gas in the furnace 1 is placed on the lower 8 side and the door 9 using the exhaust pumps 3 and 3a. To the side.
그 다음, 가열코일(1a)를 사용하여 퍼난스(1)의 내부를 씨브이디 방법으로 실리콘 웨이퍼 위에 도핑된 다결정 실리콘층의 증착이 이루어지기 적당한 온도로 유지시킨다.Then, the inside of the furnace 1 using the heating coil 1a is maintained at a temperature suitable for the deposition of the doped polycrystalline silicon layer on the silicon wafer by the CD method.
그 다음, 사일렌 및 도판트 가스를 사일렌 소스(4), (4a) 및 도판트 가스 소스(5), (5a)의 가스밸브(11), (11a)를 열어줌으로써, 사일렌과 도판트 가스를 퍼난스(1)의 래어(8)쪽과 도어(9)쪽에 각각 연결된 가스라인(6)(6a)을 통하여 퍼난스(1)내에 주입시킨다.Then, the silene and the dopant gas are opened by opening the gas valves 11 and 11a of the silene sources 4 and 4a and the dopant gas sources 5 and 5a. The gas is injected into the furnace 1 through the gas lines 6 and 6a respectively connected to the rare 8 side and the door 9 side of the furnace 1.
이때, 퍼난스(1)의 래어(8)쪽으로 주입되는 사일렌 및 도판트 가스는 불순물 원자의 생성을 막기위해 석영으로 만든 가스주입기(10)을 통하여 퍼난스(1)의 내부까지 균일하게 주입된다. 그리고, 주입되는 사일렌 및 도판트 가스의 양이 많은 경우에는 상기 자동 압력 제어 밸브(2), (2a)가 열리고 배기펌프(3), (3a)의 동작에 의해 퍼난스(1)의 래어(8) 및 도어(9)쪽으로 외부로 사일렌 및 도판트 가스를 배기시켜 퍼난스(1)내의 사일렌 및 도판트 가스의 양을 조절한다.At this time, the xylene and dopant gases injected into the lair 8 of the furnace 1 are uniformly injected to the inside of the furnace 1 through the gas injector 10 made of quartz to prevent the generation of impurity atoms. do. In the case where the amount of xylene and dopant gas to be injected is large, the automatic pressure control valves 2 and 2a are opened, and the rarer of the furnace 1 is operated by the operation of the exhaust pumps 3 and 3a. The amount of the xylene and dopant gas in the furnace 1 is adjusted by evacuating the xylene and dopant gas to the outside toward the 8 and the door 9.
상기한 바와같이 가스가 퍼난스내에 균일하게 주입되고 그 주입되는 양을 용이하게 조절 함으로써, 퍼난스의 래어쪽과 도어쪽에 장착된 웨이퍼에 원하는 층이 증착되는 비율이 같으며, 실리콘 웨이퍼 위에 균일한 비율로 도핑된 층을 얻을 수 있는 효과가 있다.As described above, by uniformly injecting gas into the furnace and easily adjusting the injected amount, the ratio of the desired layer to be deposited on the wafer mounted on the rare side and the door side of the furnace is equal, and uniform on the silicon wafer. The effect is to obtain a doped layer in proportion.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019960035189U KR200177261Y1 (en) | 1996-10-24 | 1996-10-24 | Semiconductor manufacturing apparatus |
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|---|---|---|---|
| KR2019960035189U KR200177261Y1 (en) | 1996-10-24 | 1996-10-24 | Semiconductor manufacturing apparatus |
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| KR19980021867U true KR19980021867U (en) | 1998-07-15 |
| KR200177261Y1 KR200177261Y1 (en) | 2000-05-01 |
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| KR2019960035189U KR200177261Y1 (en) | 1996-10-24 | 1996-10-24 | Semiconductor manufacturing apparatus |
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| Country | Link |
|---|---|
| KR (1) | KR200177261Y1 (en) |
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1996
- 1996-10-24 KR KR2019960035189U patent/KR200177261Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR200177261Y1 (en) | 2000-05-01 |
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