KR20020080926A - Pump exhaust line for minimizing powder outbreak in cvd equipment - Google Patents

Pump exhaust line for minimizing powder outbreak in cvd equipment Download PDF

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KR20020080926A
KR20020080926A KR1020010020792A KR20010020792A KR20020080926A KR 20020080926 A KR20020080926 A KR 20020080926A KR 1020010020792 A KR1020010020792 A KR 1020010020792A KR 20010020792 A KR20010020792 A KR 20010020792A KR 20020080926 A KR20020080926 A KR 20020080926A
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exhaust line
line
nitrogen gas
gas
powder
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KR1020010020792A
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Korean (ko)
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백선경
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삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: A structure of an exhaust line in CVD(Chemical Vapor Deposition) equipment for minimizing powers outbreak is provided to prevent or minimize the amount of powder outbreak from an exhaust line by improving the structure of the exhaust line. CONSTITUTION: A dry pump(20) is used for pumping a gas of the inside of a reaction chamber(10) to the outside though a gas line(L1). An exhaust line(L2) is connected with an exhaust hole of the dry pump(20). A powder transfer(30) is installed between the exhaust line(L2) and an inflow line(L4) of a scrubber(40). A nitrogen gas supply line(L3) is installed at a gas inflow hole(IN1) of the powder transfer(30) in order to supply a nitrogen gas higher than room temperature. A heating jacket(50) is installed at the exhaust line(L2). A hot wire is installed in the inside of the heating jacket(50) in order to generate heat to the exhaust line(L2). The nitrogen gas supply line(L3) is covered by the heating jacket(50). The high temperature nitrogen gas is supplied to a purge gas inlet of the dry pump(20).

Description

파우더 생성을 최소화한 화학기상증착 설비의 펌프배기라인 구조{pump exhaust line for minimizing powder outbreak in CVD equipment}Pump exhaust line structure for minimizing powder outbreak in CVD equipment

본 발명은 반도체 소자의 제조를 위한 제조설비에 관한 것으로, 특히 파우더 생성을 최소화한 화학기상증착 설비의 펌프배기라인 구조에 관한 것이다.The present invention relates to a manufacturing equipment for manufacturing a semiconductor device, and more particularly to a pump exhaust line structure of chemical vapor deposition equipment with a minimum of powder generation.

통상적으로 반도체 집적회로 소자는 웨이퍼 상에 포토리소그래피, 식각, 확산, 및 금속증착 등의 공정을 선택적 및 반복적으로 수행하게 됨으로써 이루어진다. 반도체 집적회로 소자를 대량으로 제조하는데 사용되는 반도체 웨이퍼 상에 원하는 막을 형성하기 위해서는 화학기상증착(CVD) 공정이 거의 필수적으로 수행된다.Typically, semiconductor integrated circuit devices are made by selectively and repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on a wafer. Chemical vapor deposition (CVD) processes are almost essential to forming desired films on semiconductor wafers used to fabricate large amounts of semiconductor integrated circuit devices.

그러한 화학기상증착(CVD)법은 진공상태에서 반응가스를 분사하여 웨이퍼위에 얇은 막을 도포하는 공정이다. 상기 CVD 공정을 행함에 있어서 챔버내에 분사된 가스는 드라이 펌프라고 불리는 펌프의 흡입력에 의해 배출라인을 따라 배출되며, 이 배기에 미반응된 가스가 함유되어 있기 때문에 배기라인 내에서 반응을 하게 되면 파우더를 형성하게 된다. 상기 파우더가 쌓여 배기라인을 막음으로써 화학기상증착 설비가 정지되는 로스가 유발된다.Such chemical vapor deposition (CVD) is a process of spraying a reaction gas in a vacuum to apply a thin film on a wafer. In the CVD process, the gas injected into the chamber is discharged along the discharge line by the suction force of a pump called a dry pump, and since the unreacted gas is contained in the exhaust, the powder is reacted in the exhaust line. Will form. The powder accumulates and blocks the exhaust line, causing loss of chemical vapor deposition equipment to be stopped.

이와 같이, CVD 방식의 챔버의 배기라인에는 챔버에서 반응되지 않고 남은 잔류 가스에 의해 파우더가 생성되며, 생성된 파우더가 후단의 배기를 막아 페일이 발생되거나 비교적 짧은 주기로 예방보전을 하게 됨에 따라 설비의 가동율이 저하되는 문제가 있게 된다.As such, the powder is generated in the exhaust line of the CVD chamber by the remaining gas which is not reacted in the chamber. There is a problem that the operation rate is lowered.

종래의 문제점을 철저히 규명하기 위해 도 1을 참조하여 종래의 설비에 설치된 배기라인 구조를 설명한다. CVD 막이 도포되는 반응 챔버(10)내의 가스는 라인(L1)을 통해 드라이 펌프(20)내로 흡입된다. 상기 드라이 펌프(20)에 흡입된 가스는 라인(L2)를 통해 배출되어 파우더 트랜스퍼(30)를 거쳐 라인(L4)을 통해 스크루버(40)에 인가된다. 상기 가스가 스크루버(40)에 도달되기 전에 유속이 느려지는 부분에서 대체로 파우더가 많이 생성된다. 그러한 부분에 상기 파우더가 점차로 쌓여지면 배기라인을 막게 되어 챔버내의 반응 가스를 배출시키지 못하게 된다.The exhaust line structure installed in the conventional facility will be described with reference to FIG. 1 in order to thoroughly identify the conventional problem. Gas in the reaction chamber 10 to which the CVD film is applied is sucked into the dry pump 20 via line L1. The gas sucked into the dry pump 20 is discharged through the line L2 and applied to the screwer 40 through the line L4 via the powder transfer 30. Before the gas reaches the scrubber 40, a large amount of powder is generally generated in a portion where the flow rate is slowed down. Gradually accumulating the powder on such a portion will block the exhaust line and will not release the reactant gas in the chamber.

통상적으로, 산화막, 질화막, TEOS 막 등을 데포지션하는 공정에서 주로 사용되는 실란가스(SiH4), TEOS 가스등은 배출시 파우더를 많이 생성하는 것으로 알려져 있다. 이 경우에 생성되는 파우더의 량을 최소화하기 위해서는 라인이 굽은 부분을 최소화하고 밸브의 수를 적게 설치하여 유속의 감소를 최소화하여여 한다.그러한 경우에도, 배기라인내에서 미반응 가스의 반응을 완전히 차단하지 못하여 배기라인을 점차로 막는 소량의 파우더가 쌓이므로, 전형적인 방법은 파우더 트랜스퍼(30)를 배기라인에 설치하고 유속의 증가를 위해 질소가스를 불어넣어 주는 것이다.In general, silane gas (SiH 4), TEOS gas, and the like, which are mainly used in the process of depositing an oxide film, a nitride film, a TEOS film, or the like, are known to generate a large amount of powder during discharge. In this case, in order to minimize the amount of powder produced, it is necessary to minimize the bent portion of the line and to install a small number of valves in order to minimize the decrease in the flow rate. Since a small amount of powder accumulates that gradually blocks the exhaust line due to failure to block, a typical method is to install powder transfer 30 in the exhaust line and blow nitrogen gas to increase the flow rate.

그렇지만, 산화막이나 질화막의 데포지션시 배기라인에는 여전히 파우더가 미량으로 쌓이는데 이러한 이유는 배기라인이 비교적 저온의 상태로 유지되기 때문이다. 저온이 되면 파우더가 더 많이 생성되는데 그러한 요인 중의 주된 하나로서 종래에는 실온의 질소가스를 그대로 상기 파우더 트랜스퍼(30)에 인가하기 때문인 것으로 확인되었다.However, a small amount of powder still accumulates in the exhaust line during deposition of the oxide film or nitride film because the exhaust line is kept at a relatively low temperature. When the temperature is lowered, more powder is produced. As one of such factors, it was conventionally confirmed that nitrogen gas at room temperature is applied to the powder transfer 30 as it is.

따라서, 파우더의 생성을 방지 또는 최소화하는 개선된 기술이 요망된다.Thus, there is a need for improved techniques to prevent or minimize the production of powder.

따라서, 본 발명의 목적은 화학기상증착 설비의 배기라인에서 파우더의 생성을 방지 또는 최소화하는 구조를 제공함에 있다.Accordingly, an object of the present invention is to provide a structure for preventing or minimizing the generation of powder in the exhaust line of the chemical vapor deposition equipment.

본 발명의 다른 목적은 파우더의 생성을 억제함에 의해 설비의 예방보전 주기를 개선하여 설비의 가동율을 증가시키고 공정안정화를 도모함에 있다.Another object of the present invention is to improve the preventive maintenance cycle of the equipment by suppressing the production of powder to increase the operation rate of the equipment and to stabilize the process.

상기한 목적들을 달성하기 위한 본 발명의 양상(aspect)에 따라, 반응챔버내의 가스를 외부로 펌핑하기 위한 드라이 펌프를 구비한 반도체 제조설비의 펌프배기라인 구조에 있어서, 상기 드라이 펌프의 배출구에 연결된 배기라인과 스크루버의 인입라인 사이에 설치된 파우더 트랜스퍼와, 상기 파우더 트랜스퍼의 유속증가용 가스 인입구에 실온보다 높은 온도를 갖는 질소가스를 제공하는 질소가스 공급라인을 구비함을 특징으로 한다.According to an aspect of the present invention for achieving the above objects, in the pump exhaust line structure of the semiconductor manufacturing equipment having a dry pump for pumping gas in the reaction chamber to the outside, connected to the outlet of the dry pump It is characterized in that it comprises a powder transfer provided between the exhaust line and the inlet line of the scrubber, and a nitrogen gas supply line for providing nitrogen gas having a temperature higher than room temperature to the gas inlet for increasing the flow rate of the powder transfer.

본 발명의 다른 양상에 따라, 반응챔버내의 가스를 외부로 펌핑하기 위한 드라이 펌프와 상기 드라이 펌프의 배출구에 연결된 배기라인과 스크루버의 인입라인 사이에 설치된 파우더 트랜스퍼를 구비한 반도체 제조설비의 펌프배기라인 구조에서 파우더 생성을 억제하기 위한 방법은, 상기 파우더 트랜스퍼의 유속증가용 가스 인입구에 실온보다 높은 온도를 갖는 질소가스를 제공하는 것을 특징으로 한다.According to another aspect of the present invention, a pump exhaust of a semiconductor manufacturing facility having a dry pump for pumping gas in a reaction chamber to an outside, and a powder transfer installed between an exhaust line connected to an outlet of the dry pump and an inlet line of a scrubber The method for suppressing powder generation in a line structure is characterized by providing a nitrogen gas having a temperature higher than room temperature to the gas inlet for increasing the flow rate of the powder transfer.

도 1은 통상적인 화학기상증착 설비의 펌프배기라인 구조도1 is a structural diagram of a pump exhaust line of a conventional chemical vapor deposition plant

도 2는 본 발명의 실시 예에 따른 화학기상증착 설비의 펌프배기라인 구조도Figure 2 is a structural diagram of the pump exhaust line of the chemical vapor deposition plant according to an embodiment of the present invention

이하에서는 본 발명에 따른 장치에 대한 바람직한 실시 예가 첨부된 도면들을 참조하여 설명된다. 다른 도면에 표시되어 있더라도 동일내지 유사한 기능을 수행하는 구성요소들은 동일한 참조부호로서 나타나 있다.Hereinafter, a preferred embodiment of the apparatus according to the present invention will be described with reference to the accompanying drawings. Components that perform the same or similar functions are shown with the same reference numerals even if they are shown in other drawings.

도 2에는 본 발명의 실시 예에 따른 화학기상증착 설비의 펌프배기라인 구조가 나타나 있다. 도 2를 참조하면, 반응챔버(10)내의 가스를 라인(L1)을 통해 외부로 펌핑하기 위한 드라이 펌프(20)를 구비한 반도체 제조설비의 펌프배기라인 구조는, 상기 드라이 펌프(20)의 배출구에 연결된 배기라인(L2)과 스크루버(40)의 인입라인(L4) 사이에 설치된 파우더 트랜스퍼(30)를 구비한다. 또한, 상기 파우더 트랜스퍼(30)의 유속증가용 가스 인입구(IN1)에 실온보다 높은 온도를 갖는 질소가스를 제공하는 질소가스 공급라인(L3)을 구비한다. 그리고, 파우더 트랜스퍼(30)에 질소가스가 제공되는 위치를 도 1과는 다르게 하여 하부에서 상부로 공급하는 구조를갖도록 한다.Figure 2 shows the structure of the pump exhaust line of the chemical vapor deposition plant according to an embodiment of the present invention. Referring to FIG. 2, a pump exhaust line structure of a semiconductor manufacturing facility having a dry pump 20 for pumping gas in the reaction chamber 10 to the outside through a line L1 may be provided in the dry pump 20. Powder transfer 30 is provided between the exhaust line (L2) connected to the outlet and the inlet line (L4) of the screwer (40). In addition, the nitrogen gas supply line (L3) for providing a nitrogen gas having a temperature higher than the room temperature to the gas inlet (IN1) for increasing the flow rate of the powder transfer (30). In addition, the position where the nitrogen gas is provided to the powder transfer 30 is different from that of FIG. 1 so as to have a structure for supplying from the bottom to the top.

한편, 상기 배기라인(L2)에는 상기 배기라인을 히팅하기 위한 히팅자켓(50)이 더 설치된다. 상기 히팅자켓(50)은 열선이 내장되어 전원의 인가시 열을 발생하는 보온용 덮개이다. 상기 질소가스 공급라인(L3)은 질소가스의 온도를 상승시키기 위해 상기 히팅자켓에 덮여 있다.On the other hand, a heating jacket 50 for heating the exhaust line is further installed in the exhaust line (L2). The heating jacket 50 is a heat insulating cover that is built-in heating wire to generate heat when the power is applied. The nitrogen gas supply line L3 is covered with the heating jacket to increase the temperature of the nitrogen gas.

또한, 드라이 펌프(20)의 정화용 가스 인입구에는 상기 질소가스 공급라인(L3)에서 제공되는 가스와 동일한 고온의 질소가스가 인가되게 한다.In addition, the same high temperature nitrogen gas as that provided in the nitrogen gas supply line L3 is applied to the purge gas inlet of the dry pump 20.

결국 본 발명의 구조에서는 온도 및 유속이 낮아지면 파우더가 많이 생성되는 것을 인지하고, 파우더 트랜스퍼(30)에 실온보다 높은 온도를 갖는 질소가스를 넣어주는 것이 특징이다. 그러기 위해서는 미리 히팅된 질소가스를 바로 넣어줄 수 도 있지만, 본 실시예의 경우에는 배기라인 전체를 히팅 자켓으로 덮고, 펌프 정화(purge)용으로 들어가는 질소가스도 상기 히팅 자켓을 통과하게 하는 것이다. 따라서, 차가운 질소 가스를 넣어주는 종래의 경우에 비해 유속을 저하시킴이 없이 배기 가스의 온도가 그대로 유지되므로 파우더의 생성량이 현저히 줄어든다.Eventually, the structure of the present invention recognizes that a lot of powder is produced when the temperature and flow rate are lowered, and it is characterized by putting nitrogen gas having a temperature higher than room temperature in the powder transfer 30. In order to do this, the preheated nitrogen gas may be directly put, but in this embodiment, the entire exhaust line is covered with a heating jacket, and the nitrogen gas entering the pump purge is also passed through the heating jacket. Therefore, since the temperature of the exhaust gas is maintained as it is without lowering the flow rate as compared with the conventional case of adding cold nitrogen gas, the amount of powder produced is significantly reduced.

상기한 설명에서 본 발명을 구체적인 실시예에 대해서만 상세히 설명하였지만 본 발명의 기술적 사상의 범위 내에서 변형이나 변경할 수 있음은 본 발명이 속하는 분야의 당업자에게는 명백한 것이며, 그러한 변형이나 변경은 본 발명의 특허청구범위에 속한다 할 것이다. 예를 들어, 사안이 다른 경우에 질소가스가 아닌 타의 유사가스를 가열하여 인가할 수 있음은 물론이다.In the above description, the present invention has been described in detail only with respect to specific embodiments, but it is obvious to those skilled in the art that the present invention may be modified or changed within the scope of the technical idea of the present invention, and such modifications or changes are patents of the present invention. Will belong to the claims. For example, in case of different matters, other similar gases other than nitrogen gas may be heated and applied.

상기한 본 발명에 따르면, 화학기상증착 설비의 배기라인에서 파우더의 생성을 방지 또는 최소화하는 효과를 갖는다. 그럼에 의해, 설비의 예방보전 주기를 종래에 비해 길게 하여 설비의 가동율이 증가되는 장점과 공정안정화를 도모하는 이점이 있다.According to the present invention described above, it has the effect of preventing or minimizing the generation of powder in the exhaust line of the chemical vapor deposition equipment. As a result, the preventive maintenance cycle of the equipment is longer than in the related art, thereby increasing the operation rate of the equipment and improving the process stability.

Claims (5)

반응챔버내의 가스를 외부로 펌핑하기 위한 드라이 펌프를 구비한 반도체 제조설비의 펌프배기라인 구조에 있어서:In the pump exhaust line structure of a semiconductor manufacturing facility having a dry pump for pumping gas in the reaction chamber to the outside: 상기 드라이 펌프의 배출구에 연결된 배기라인과 스크루버의 인입라인 사이에 설치된 파우더 트랜스퍼와;A powder transfer device disposed between an exhaust line connected to an outlet of the dry pump and an inlet line of a scrubber; 상기 파우더 트랜스퍼의 유속증가용 가스 인입구에 실온보다 높은 온도를 갖는 질소가스를 제공하는 질소가스 공급라인을 구비함을 특징으로 하는 구조.And a nitrogen gas supply line for supplying nitrogen gas having a temperature higher than room temperature to a gas inlet for increasing the flow rate of the powder transfer. 제1항에 있어서, 상기 배기라인에는 상기 배기라인을 히팅하기 위한 히팅자켓이 더 설치됨을 특징으로 하는 구조.The structure of claim 1, wherein a heating jacket for heating the exhaust line is further installed in the exhaust line. 제2항에 있어서, 상기 질소가스의 온도를 상승시키기 위해 상기 질소가스 공급라인은 상기 히팅자켓에 덮여 있는 것을 특징으로 하는 구조.The structure of claim 2, wherein the nitrogen gas supply line is covered with the heating jacket to raise the temperature of the nitrogen gas. 제2항에 있어서, 상기 드라이 펌프의 정화용 가스 인입구에는 상기 질소가스 공급라인에서 제공되는 가스와 동일한 고온의 가스가 인가되는 것을 특징으로 하는구조.3. The structure according to claim 2, wherein the same high temperature gas as that provided in the nitrogen gas supply line is applied to the purge gas inlet of the dry pump. 반응챔버내의 가스를 외부로 펌핑하기 위한 드라이 펌프와 상기 드라이 펌프의 배출구에 연결된 배기라인과 스크루버의 인입라인 사이에 설치된 파우더 트랜스퍼를 구비한 반도체 제조설비의 펌프배기라인 구조에서 파우더 생성을 억제하기 위한 방법에 있어서:Suppressing powder generation in a pump exhaust line structure of a semiconductor manufacturing facility having a dry pump for pumping gas in the reaction chamber to an outside, and a powder transfer provided between an exhaust line connected to an outlet of the dry pump and an inlet line of a scrubber In the way: 상기 파우더 트랜스퍼의 유속증가용 가스 인입구에 실온보다 높은 온도를 갖는 질소가스를 제공하는 것을 특징으로 하는 방법.And a nitrogen gas having a temperature higher than room temperature to a gas inlet for increasing the flow rate of the powder transfer.
KR1020010020792A 2001-04-18 2001-04-18 Pump exhaust line for minimizing powder outbreak in cvd equipment KR20020080926A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100648268B1 (en) * 2004-10-07 2006-11-23 삼성전자주식회사 Exhaust system used in manufacturing semiconductor devices and apparatus for treating substrates using the system
KR100837543B1 (en) * 2003-12-12 2008-06-12 동부일렉트로닉스 주식회사 Cooling Trap Apparatus of pump exhaust line and Powder Removing Method using the Cooling Trap Apparatus
CN114300330A (en) * 2021-12-28 2022-04-08 上海华力微电子有限公司 Dry pump tail pipe and ion implanter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100837543B1 (en) * 2003-12-12 2008-06-12 동부일렉트로닉스 주식회사 Cooling Trap Apparatus of pump exhaust line and Powder Removing Method using the Cooling Trap Apparatus
KR100648268B1 (en) * 2004-10-07 2006-11-23 삼성전자주식회사 Exhaust system used in manufacturing semiconductor devices and apparatus for treating substrates using the system
CN114300330A (en) * 2021-12-28 2022-04-08 上海华力微电子有限公司 Dry pump tail pipe and ion implanter

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