KR102922410B1 - 광전 변환 장치, 광전 변환 시스템, 이동체 - Google Patents

광전 변환 장치, 광전 변환 시스템, 이동체

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Publication number
KR102922410B1
KR102922410B1 KR1020220011169A KR20220011169A KR102922410B1 KR 102922410 B1 KR102922410 B1 KR 102922410B1 KR 1020220011169 A KR1020220011169 A KR 1020220011169A KR 20220011169 A KR20220011169 A KR 20220011169A KR 102922410 B1 KR102922410 B1 KR 102922410B1
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South Korea
Prior art keywords
signal processing
processing unit
photoelectric conversion
conversion device
unit
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KR1020220011169A
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English (en)
Korean (ko)
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KR20220112686A (ko
Inventor
게이 오치아이
요시아키 다카다
마사키 사토
마사히로 고바야시
다이스케 고바야시
데츠야 이타노
나오 나카츠지
야스히로 오구로
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Data Mining & Analysis (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Artificial Intelligence (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
KR1020220011169A 2021-02-04 2022-01-26 광전 변환 장치, 광전 변환 시스템, 이동체 Active KR102922410B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021016446A JP7646380B2 (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体
JPJP-P-2021-016446 2021-02-04

Publications (2)

Publication Number Publication Date
KR20220112686A KR20220112686A (ko) 2022-08-11
KR102922410B1 true KR102922410B1 (ko) 2026-02-05

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KR1020220011169A Active KR102922410B1 (ko) 2021-02-04 2022-01-26 광전 변환 장치, 광전 변환 시스템, 이동체

Country Status (5)

Country Link
US (1) US11849238B2 (https=)
EP (1) EP4040779A1 (https=)
JP (1) JP7646380B2 (https=)
KR (1) KR102922410B1 (https=)
CN (1) CN114938434A (https=)

Families Citing this family (4)

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JP6704944B2 (ja) * 2018-02-09 2020-06-03 キヤノン株式会社 撮像装置、撮像システム、移動体
JP7654415B2 (ja) * 2021-02-04 2025-04-01 キヤノン株式会社 光電変換装置、機器
WO2023132002A1 (ja) * 2022-01-05 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、移動体
CN120380774A (zh) * 2022-12-23 2025-07-25 索尼半导体解决方案公司 光检测装置及用于光检测装置的控制方法

Citations (2)

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WO2020170890A1 (ja) * 2019-02-19 2020-08-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器、および撮像方法
US20200321374A1 (en) * 2019-04-05 2020-10-08 Waymo Llc Image sensor architecture

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JP4500434B2 (ja) 2000-11-28 2010-07-14 キヤノン株式会社 撮像装置及び撮像システム、並びに撮像方法
JP2007208685A (ja) * 2006-02-02 2007-08-16 Nikon Corp シフトレジスタ回路及びこれを用いた固体撮像装置
JP5143278B2 (ja) * 2011-12-28 2013-02-13 富士フイルム株式会社 放射線撮影装置
JP6245474B2 (ja) 2014-04-21 2017-12-13 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、並びに、電子機器
US11411036B2 (en) * 2017-04-04 2022-08-09 Sony Semiconductor Solutions Corporation Solid-state imaging device and electronic apparatus
JP6912922B2 (ja) 2017-04-12 2021-08-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子
KR102325497B1 (ko) 2017-09-29 2021-11-12 캐논 가부시끼가이샤 촬상 소자 및 촬상 장치
JP7091052B2 (ja) 2017-10-25 2022-06-27 キヤノン株式会社 撮像素子及び撮像装置
JP6704944B2 (ja) * 2018-02-09 2020-06-03 キヤノン株式会社 撮像装置、撮像システム、移動体
KR102899656B1 (ko) * 2018-07-31 2025-12-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 적층형 수광 센서 및 전자기기
WO2020027230A1 (ja) 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び車載撮像装置
WO2020027161A1 (ja) * 2018-07-31 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び電子機器
JP7402606B2 (ja) * 2018-10-31 2023-12-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US11424282B2 (en) * 2019-02-25 2022-08-23 Canon Kabushiki Kaisha Semiconductor apparatus and equipment
JP2021005846A (ja) 2019-06-27 2021-01-14 オリンパス株式会社 積層型撮像デバイス、撮像装置、撮像方法、学習方法及び画像読み出し回路
US11941519B2 (en) * 2019-12-02 2024-03-26 Waymo Llc Machine learning training platform
KR102948033B1 (ko) * 2020-01-17 2026-04-06 삼성전자주식회사 이미지 센서 및 이를 포함하는 카메라 모듈
WO2021161712A1 (ja) 2020-02-14 2021-08-19 ソニーグループ株式会社 撮像装置及び車両制御システム

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WO2020170890A1 (ja) * 2019-02-19 2020-08-27 ソニーセミコンダクタソリューションズ株式会社 撮像装置、電子機器、および撮像方法
US20200321374A1 (en) * 2019-04-05 2020-10-08 Waymo Llc Image sensor architecture

Also Published As

Publication number Publication date
US11849238B2 (en) 2023-12-19
CN114938434A (zh) 2022-08-23
EP4040779A1 (en) 2022-08-10
US20220247966A1 (en) 2022-08-04
JP2022119374A (ja) 2022-08-17
KR20220112686A (ko) 2022-08-11
JP7646380B2 (ja) 2025-03-17

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