KR102902474B1 - 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법 - Google Patents

반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

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Publication number
KR102902474B1
KR102902474B1 KR1020237021001A KR20237021001A KR102902474B1 KR 102902474 B1 KR102902474 B1 KR 102902474B1 KR 1020237021001 A KR1020237021001 A KR 1020237021001A KR 20237021001 A KR20237021001 A KR 20237021001A KR 102902474 B1 KR102902474 B1 KR 102902474B1
Authority
KR
South Korea
Prior art keywords
temperature
semiconductor wafer
heat transfer
transfer plate
mass measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020237021001A
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English (en)
Korean (ko)
Other versions
KR20230098696A (ko
Inventor
그레고르 엘리엇
에릭 토니스
Original Assignee
메트릭스 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 메트릭스 리미티드 filed Critical 메트릭스 리미티드
Priority to KR1020257042013A priority Critical patent/KR20260003408A/ko
Publication of KR20230098696A publication Critical patent/KR20230098696A/ko
Application granted granted Critical
Publication of KR102902474B1 publication Critical patent/KR102902474B1/ko
Assigned to 램 리써치 코포레이션 reassignment 램 리써치 코포레이션 권리의 전부이전등록 Assignors: 메트릭스 리미티드
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/67248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • H01L21/67103—
    • H01L21/67109—
    • H01L21/67253—
    • H01L21/67748—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020237021001A 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법 Active KR102902474B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257042013A KR20260003408A (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB1806377.6A GB201806377D0 (en) 2018-04-19 2018-04-19 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method
GB1806377.6 2018-04-19
KR1020207033146A KR102547839B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
PCT/EP2019/058388 WO2019201603A1 (en) 2018-04-19 2019-04-03 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020207033146A Division KR102547839B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257042013A Division KR20260003408A (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Publications (2)

Publication Number Publication Date
KR20230098696A KR20230098696A (ko) 2023-07-04
KR102902474B1 true KR102902474B1 (ko) 2025-12-18

Family

ID=62236133

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020237021001A Active KR102902474B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
KR1020207033146A Active KR102547839B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
KR1020257042013A Pending KR20260003408A (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020207033146A Active KR102547839B1 (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법
KR1020257042013A Pending KR20260003408A (ko) 2018-04-19 2019-04-03 반도체 웨이퍼 질량 계측 장치 및 반도체 웨이퍼 질량 계측 방법

Country Status (9)

Country Link
US (1) US12288702B2 (enExample)
EP (1) EP3782188B1 (enExample)
JP (1) JP7335896B2 (enExample)
KR (3) KR102902474B1 (enExample)
CN (1) CN112368814B (enExample)
GB (1) GB201806377D0 (enExample)
SG (1) SG11202010143VA (enExample)
TW (1) TWI822759B (enExample)
WO (1) WO2019201603A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer
CN113496912B (zh) * 2020-04-02 2023-10-17 长鑫存储技术有限公司 监测晶圆及监测系统
CN113819985A (zh) * 2020-06-18 2021-12-21 拓荆科技股份有限公司 晶圆防干扰称重装置及其应用
WO2023021007A1 (en) * 2021-08-18 2023-02-23 Metryx Ltd. Device for changing the temperature of a wafer
KR102971413B1 (ko) * 2021-10-28 2026-06-01 에스케이실트론 주식회사 챔버 상부의 돔 온도 제어장치 및 돔 온도 제어방법
CN116417319A (zh) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 一种控温装置及相应的等离子体处理器
KR102706137B1 (ko) * 2022-06-14 2024-09-13 주식회사 코비스테크놀로지 병렬구조의 질량측정장치를 이용한 질량측정방법
GB202414501D0 (en) * 2024-10-02 2024-11-13 Metryx Ltd Method and apparatus for controlling the temperature of a wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017507474A (ja) * 2013-12-04 2017-03-16 メトリックス・リミテッドＭｅｔｒｙｘ Ｌｉｍｉｔｅｄ 半導体ウェハ処理方法および装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
KR100342754B1 (ko) 1999-11-10 2002-07-04 황인길 무게 측정을 통한 반도체 웨이퍼의 정렬 시스템
GB0016562D0 (en) 2000-07-05 2000-08-23 Metryx Limited Apparatus and method for investigating semiconductor wafers
US6790376B1 (en) * 2001-07-23 2004-09-14 Advanced Micro Devices, Inc. Process control based upon weight or mass measurements, and systems for accomplishing same
CN1702849A (zh) * 2004-05-26 2005-11-30 松下电器产业株式会社 温度异常检测方法及半导体制造装置
US20060286807A1 (en) 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
KR20060118747A (ko) * 2005-05-17 2006-11-24 삼성전자주식회사 온도 조절 어셈블리 및 이를 갖는 이온 주입 장치
US7534627B2 (en) * 2006-08-07 2009-05-19 Sokudo Co., Ltd. Methods and systems for controlling critical dimensions in track lithography tools
US7935942B2 (en) * 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
GB0719460D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
GB0719469D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
DE102008041250A1 (de) 2008-08-13 2010-02-25 Ers Electronic Gmbh Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern
US9111971B2 (en) 2012-07-30 2015-08-18 Applied Materials Israel, Ltd. System and method for temperature control of a semiconductor wafer
GB201315715D0 (en) * 2013-09-04 2013-10-16 Metryx Ltd Method and device for determining information relating to the mass of a semiconductor wafer
WO2015169616A1 (en) * 2014-05-06 2015-11-12 Asml Netherlands B.V. Substrate support, method for loading a substrate on a substrate support location, lithographic apparatus and device manufacturing method
US20150332942A1 (en) 2014-05-16 2015-11-19 Eng Sheng Peh Pedestal fluid-based thermal control
US10430719B2 (en) * 2014-11-25 2019-10-01 Stream Mosaic, Inc. Process control techniques for semiconductor manufacturing processes
US10269682B2 (en) 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017507474A (ja) * 2013-12-04 2017-03-16 メトリックス・リミテッドＭｅｔｒｙｘ Ｌｉｍｉｔｅｄ 半導体ウェハ処理方法および装置

Also Published As

Publication number Publication date
SG11202010143VA (en) 2020-11-27
KR20260003408A (ko) 2026-01-06
EP3782188B1 (en) 2023-06-21
JP2021521441A (ja) 2021-08-26
CN112368814A (zh) 2021-02-12
TW202002125A (zh) 2020-01-01
US12288702B2 (en) 2025-04-29
WO2019201603A1 (en) 2019-10-24
US20210175102A1 (en) 2021-06-10
JP7335896B2 (ja) 2023-08-30
TWI822759B (zh) 2023-11-21
KR102547839B1 (ko) 2023-06-23
EP3782188A1 (en) 2021-02-24
GB201806377D0 (en) 2018-06-06
KR20200143480A (ko) 2020-12-23
KR20230098696A (ko) 2023-07-04
CN112368814B (zh) 2025-02-28

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