JP7335896B2 - 半導体ウエハ質量計測装置および半導体ウエハ質量計測方法 - Google Patents

半導体ウエハ質量計測装置および半導体ウエハ質量計測方法 Download PDF

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JP7335896B2
JP7335896B2 JP2020555869A JP2020555869A JP7335896B2 JP 7335896 B2 JP7335896 B2 JP 7335896B2 JP 2020555869 A JP2020555869 A JP 2020555869A JP 2020555869 A JP2020555869 A JP 2020555869A JP 7335896 B2 JP7335896 B2 JP 7335896B2
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semiconductor wafer
temperature
mass
heat transfer
transfer plate
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JP2021521441A (ja
JPWO2019201603A5 (enExample
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エリオット・グレガー
トニス・エリック
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Metryx Ltd
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Metryx Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N25/00—Investigating or analyzing materials by the use of thermal means
    • G01N25/72—Investigating presence of flaws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2020555869A 2018-04-19 2019-04-03 半導体ウエハ質量計測装置および半導体ウエハ質量計測方法 Active JP7335896B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1806377.6A GB201806377D0 (en) 2018-04-19 2018-04-19 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method
GB1806377.6 2018-04-19
PCT/EP2019/058388 WO2019201603A1 (en) 2018-04-19 2019-04-03 Semiconductor wafer mass metrology apparatus and semiconductor wafer mass metrology method

Publications (3)

Publication Number Publication Date
JP2021521441A JP2021521441A (ja) 2021-08-26
JPWO2019201603A5 JPWO2019201603A5 (enExample) 2022-04-11
JP7335896B2 true JP7335896B2 (ja) 2023-08-30

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JP2020555869A Active JP7335896B2 (ja) 2018-04-19 2019-04-03 半導体ウエハ質量計測装置および半導体ウエハ質量計測方法

Country Status (9)

Country Link
US (1) US12288702B2 (enExample)
EP (1) EP3782188B1 (enExample)
JP (1) JP7335896B2 (enExample)
KR (1) KR102547839B1 (enExample)
CN (1) CN112368814B (enExample)
GB (1) GB201806377D0 (enExample)
SG (1) SG11202010143VA (enExample)
TW (1) TWI822759B (enExample)
WO (1) WO2019201603A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201815815D0 (en) * 2018-09-28 2018-11-14 Metryx Ltd Method and apparatus for controlling the temperature of a semiconductor wafer
CN113496912B (zh) * 2020-04-02 2023-10-17 长鑫存储技术有限公司 监测晶圆及监测系统
CN113819985A (zh) * 2020-06-18 2021-12-21 拓荆科技股份有限公司 晶圆防干扰称重装置及其应用
CN116417319A (zh) * 2021-12-30 2023-07-11 中微半导体设备(上海)股份有限公司 一种控温装置及相应的等离子体处理器
KR102706137B1 (ko) * 2022-06-14 2024-09-13 주식회사 코비스테크놀로지 병렬구조의 질량측정장치를 이용한 질량측정방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060286807A1 (en) 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
JP2017507474A (ja) 2013-12-04 2017-03-16 メトリックス・リミテッドＭｅｔｒｙｘ Ｌｉｍｉｔｅｄ 半導体ウェハ処理方法および装置

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US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
KR100342754B1 (ko) 1999-11-10 2002-07-04 황인길 무게 측정을 통한 반도체 웨이퍼의 정렬 시스템
GB0016562D0 (en) 2000-07-05 2000-08-23 Metryx Limited Apparatus and method for investigating semiconductor wafers
US6790376B1 (en) * 2001-07-23 2004-09-14 Advanced Micro Devices, Inc. Process control based upon weight or mass measurements, and systems for accomplishing same
CN1702849A (zh) * 2004-05-26 2005-11-30 松下电器产业株式会社 温度异常检测方法及半导体制造装置
US20060004493A1 (en) * 2004-06-30 2006-01-05 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
KR20060118747A (ko) * 2005-05-17 2006-11-24 삼성전자주식회사 온도 조절 어셈블리 및 이를 갖는 이온 주입 장치
US7534627B2 (en) * 2006-08-07 2009-05-19 Sokudo Co., Ltd. Methods and systems for controlling critical dimensions in track lithography tools
US7935942B2 (en) * 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
GB0719460D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
GB0719469D0 (en) 2007-10-04 2007-11-14 Metryx Ltd Measurement apparatus and method
DE102008041250A1 (de) 2008-08-13 2010-02-25 Ers Electronic Gmbh Verfahren und Vorrichtung zum thermischen Bearbeiten von Kunststoffscheiben, insbesondere Moldwafern
US9111971B2 (en) 2012-07-30 2015-08-18 Applied Materials Israel, Ltd. System and method for temperature control of a semiconductor wafer
GB201315715D0 (en) * 2013-09-04 2013-10-16 Metryx Ltd Method and device for determining information relating to the mass of a semiconductor wafer
KR101932208B1 (ko) * 2014-05-06 2018-12-24 에이에스엠엘 네델란즈 비.브이. 기판 지지체, 기판 지지 위치 상에 기판을 로딩하기 위한 방법, 리소그래피 장치 및 디바이스 제조 방법
US20150332942A1 (en) 2014-05-16 2015-11-19 Eng Sheng Peh Pedestal fluid-based thermal control
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060286807A1 (en) 2005-06-16 2006-12-21 Jack Hwang Use of active temperature control to provide emmisivity independent wafer temperature
JP2017507474A (ja) 2013-12-04 2017-03-16 メトリックス・リミテッドＭｅｔｒｙｘ Ｌｉｍｉｔｅｄ 半導体ウェハ処理方法および装置

Also Published As

Publication number Publication date
JP2021521441A (ja) 2021-08-26
US20210175102A1 (en) 2021-06-10
KR20200143480A (ko) 2020-12-23
TWI822759B (zh) 2023-11-21
KR20230098696A (ko) 2023-07-04
EP3782188B1 (en) 2023-06-21
GB201806377D0 (en) 2018-06-06
SG11202010143VA (en) 2020-11-27
TW202002125A (zh) 2020-01-01
WO2019201603A1 (en) 2019-10-24
KR102547839B1 (ko) 2023-06-23
EP3782188A1 (en) 2021-02-24
US12288702B2 (en) 2025-04-29
CN112368814B (zh) 2025-02-28
CN112368814A (zh) 2021-02-12

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