KR102901223B1 - 반도체 측정 품질의 타겟팅된 모니터링을 위한 방법 및 시스템 - Google Patents
반도체 측정 품질의 타겟팅된 모니터링을 위한 방법 및 시스템Info
- Publication number
- KR102901223B1 KR102901223B1 KR1020247009499A KR20247009499A KR102901223B1 KR 102901223 B1 KR102901223 B1 KR 102901223B1 KR 1020247009499 A KR1020247009499 A KR 1020247009499A KR 20247009499 A KR20247009499 A KR 20247009499A KR 102901223 B1 KR102901223 B1 KR 102901223B1
- Authority
- KR
- South Korea
- Prior art keywords
- measurement
- amount
- value
- interest
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/706831—Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
- G03F7/706841—Machine learning
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8845—Multiple wavelengths of illumination or detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8848—Polarisation of light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Data Mining & Analysis (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Evolutionary Computation (AREA)
- Medical Informatics (AREA)
- Artificial Intelligence (AREA)
- Software Systems (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/578,310 US12019030B2 (en) | 2022-01-18 | 2022-01-18 | Methods and systems for targeted monitoring of semiconductor measurement quality |
| US17/578,310 | 2022-01-18 | ||
| PCT/US2022/053898 WO2023140957A1 (en) | 2022-01-18 | 2022-12-22 | Methods and systems for targeted monitoring of semiconductor measurement quality |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20240135737A KR20240135737A (ko) | 2024-09-12 |
| KR102901223B1 true KR102901223B1 (ko) | 2025-12-16 |
Family
ID=87161663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247009499A Active KR102901223B1 (ko) | 2022-01-18 | 2022-12-22 | 반도체 측정 품질의 타겟팅된 모니터링을 위한 방법 및 시스템 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12019030B2 (https=) |
| JP (1) | JP7784530B2 (https=) |
| KR (1) | KR102901223B1 (https=) |
| CN (1) | CN118140136A (https=) |
| IL (1) | IL311357A (https=) |
| WO (1) | WO2023140957A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20250124599A1 (en) * | 2023-10-11 | 2025-04-17 | Applied Materials Israel Ltd. | Automatic calibration of an examination tool |
Citations (5)
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| US20160154319A1 (en) | 2013-08-13 | 2016-06-02 | Asml Netherlands B.V. | Method and Inspection Apparatus and Computer Program Product for Assessing a Quality of Reconstruction of a Value of a Parameter of Interest of a Structure |
| US10325004B1 (en) | 2011-06-20 | 2019-06-18 | Kla-Tencor Corporation | Method of optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology |
| US20190347527A1 (en) | 2017-06-28 | 2019-11-14 | Applied Materials, Inc. | Classification, search and retrieval of semiconductor processing metrology images using deep learning/convolutional neural networks |
| US20200200525A1 (en) | 2018-12-19 | 2020-06-25 | Kla Corporation | Scatterometry Based Methods And Systems For Measurement Of Strain In Semiconductor Structures |
| WO2021001114A1 (en) | 2019-07-04 | 2021-01-07 | Asml Netherlands B.V. | Method and apparatus for determining feature contribution to performance |
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| US5608526A (en) | 1995-01-19 | 1997-03-04 | Tencor Instruments | Focused beam spectroscopic ellipsometry method and system |
| US6023338A (en) | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5859424A (en) | 1997-04-08 | 1999-01-12 | Kla-Tencor Corporation | Apodizing filter system useful for reducing spot size in optical measurements and other applications |
| US6429943B1 (en) | 2000-03-29 | 2002-08-06 | Therma-Wave, Inc. | Critical dimension analysis with simultaneous multiple angle of incidence measurements |
| US6787773B1 (en) | 2000-06-07 | 2004-09-07 | Kla-Tencor Corporation | Film thickness measurement using electron-beam induced x-ray microanalysis |
| US7068833B1 (en) | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US20030002043A1 (en) | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
| US6716646B1 (en) | 2001-07-16 | 2004-04-06 | Advanced Micro Devices, Inc. | Method and apparatus for performing overlay measurements using scatterometry |
| WO2003054475A2 (en) | 2001-12-19 | 2003-07-03 | Kla-Tencor Technologies Corporation | Parametric profiling using optical spectroscopic systems |
| US6778275B2 (en) | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
| JP4222927B2 (ja) | 2002-09-20 | 2009-02-12 | エーエスエムエル ネザーランズ ビー.ブイ. | 少なくとも2波長を使用するリソグラフィ装置用アライメント・システム |
| US6992764B1 (en) | 2002-09-30 | 2006-01-31 | Nanometrics Incorporated | Measuring an alignment target with a single polarization state |
| US7842933B2 (en) | 2003-10-22 | 2010-11-30 | Applied Materials Israel, Ltd. | System and method for measuring overlay errors |
| US6937337B2 (en) | 2003-11-19 | 2005-08-30 | International Business Machines Corporation | Overlay target and measurement method using reference and sub-grids |
| US7321426B1 (en) | 2004-06-02 | 2008-01-22 | Kla-Tencor Technologies Corporation | Optical metrology on patterned samples |
| US7478019B2 (en) * | 2005-01-26 | 2009-01-13 | Kla-Tencor Corporation | Multiple tool and structure analysis |
| JP4585926B2 (ja) | 2005-06-17 | 2010-11-24 | 株式会社日立ハイテクノロジーズ | パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム |
| US7567351B2 (en) | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
| JP4887062B2 (ja) | 2006-03-14 | 2012-02-29 | 株式会社日立ハイテクノロジーズ | 試料寸法測定方法、及び試料寸法測定装置 |
| US7406153B2 (en) | 2006-08-15 | 2008-07-29 | Jordan Valley Semiconductors Ltd. | Control of X-ray beam spot size |
| US7873585B2 (en) | 2007-08-31 | 2011-01-18 | Kla-Tencor Technologies Corporation | Apparatus and methods for predicting a semiconductor parameter across an area of a wafer |
| US7929667B1 (en) | 2008-10-02 | 2011-04-19 | Kla-Tencor Corporation | High brightness X-ray metrology |
| US8068662B2 (en) | 2009-03-30 | 2011-11-29 | Hermes Microvision, Inc. | Method and system for determining a defect during charged particle beam inspection of a sample |
| JP5532804B2 (ja) | 2009-09-30 | 2014-06-25 | 日本電気株式会社 | 信頼度判断装置、信頼度判断方法、及び信頼度判断用コンピュータプログラム |
| JP5764380B2 (ja) | 2010-04-29 | 2015-08-19 | エフ イー アイ カンパニFei Company | Sem画像化法 |
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| US10801975B2 (en) | 2012-05-08 | 2020-10-13 | Kla-Tencor Corporation | Metrology tool with combined X-ray and optical scatterometers |
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| US10152678B2 (en) | 2014-11-19 | 2018-12-11 | Kla-Tencor Corporation | System, method and computer program product for combining raw data from multiple metrology tools |
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| US10352695B2 (en) | 2015-12-11 | 2019-07-16 | Kla-Tencor Corporation | X-ray scatterometry metrology for high aspect ratio structures |
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| US10481111B2 (en) | 2016-10-21 | 2019-11-19 | Kla-Tencor Corporation | Calibration of a small angle X-ray scatterometry based metrology system |
| US11073487B2 (en) | 2017-05-11 | 2021-07-27 | Kla-Tencor Corporation | Methods and systems for characterization of an x-ray beam with high spatial resolution |
| US11333621B2 (en) | 2017-07-11 | 2022-05-17 | Kla-Tencor Corporation | Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction |
| US11519869B2 (en) | 2018-03-20 | 2022-12-06 | Kla Tencor Corporation | Methods and systems for real time measurement control |
| US11698251B2 (en) | 2020-01-07 | 2023-07-11 | Kla Corporation | Methods and systems for overlay measurement based on soft X-ray Scatterometry |
-
2022
- 2022-01-18 US US17/578,310 patent/US12019030B2/en active Active
- 2022-12-22 WO PCT/US2022/053898 patent/WO2023140957A1/en not_active Ceased
- 2022-12-22 CN CN202280063661.1A patent/CN118140136A/zh active Pending
- 2022-12-22 KR KR1020247009499A patent/KR102901223B1/ko active Active
- 2022-12-22 JP JP2024516844A patent/JP7784530B2/ja active Active
- 2022-12-22 IL IL311357A patent/IL311357A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10325004B1 (en) | 2011-06-20 | 2019-06-18 | Kla-Tencor Corporation | Method of optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology |
| US20160154319A1 (en) | 2013-08-13 | 2016-06-02 | Asml Netherlands B.V. | Method and Inspection Apparatus and Computer Program Product for Assessing a Quality of Reconstruction of a Value of a Parameter of Interest of a Structure |
| US20190347527A1 (en) | 2017-06-28 | 2019-11-14 | Applied Materials, Inc. | Classification, search and retrieval of semiconductor processing metrology images using deep learning/convolutional neural networks |
| US20200200525A1 (en) | 2018-12-19 | 2020-06-25 | Kla Corporation | Scatterometry Based Methods And Systems For Measurement Of Strain In Semiconductor Structures |
| WO2021001114A1 (en) | 2019-07-04 | 2021-01-07 | Asml Netherlands B.V. | Method and apparatus for determining feature contribution to performance |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202344831A (zh) | 2023-11-16 |
| JP2025501839A (ja) | 2025-01-24 |
| CN118140136A (zh) | 2024-06-04 |
| US12019030B2 (en) | 2024-06-25 |
| WO2023140957A1 (en) | 2023-07-27 |
| KR20240135737A (ko) | 2024-09-12 |
| JP7784530B2 (ja) | 2025-12-11 |
| US20230228692A1 (en) | 2023-07-20 |
| IL311357A (en) | 2024-05-01 |
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