IL311357A - Systems and methods for intended monitoring of semiconductor measurement quality - Google Patents

Systems and methods for intended monitoring of semiconductor measurement quality

Info

Publication number
IL311357A
IL311357A IL311357A IL31135724A IL311357A IL 311357 A IL311357 A IL 311357A IL 311357 A IL311357 A IL 311357A IL 31135724 A IL31135724 A IL 31135724A IL 311357 A IL311357 A IL 311357A
Authority
IL
Israel
Prior art keywords
systems
methods
measurement quality
semiconductor measurement
targeted monitoring
Prior art date
Application number
IL311357A
Other languages
English (en)
Hebrew (he)
Inventor
Antonio Gellineau
Andrei V Shchegrov
Hyowon Park
Pavan Gurudath
jung heon Song
Christopher Liman
Original Assignee
Kla Corp
Antonio Gellineau
Andrei V Shchegrov
Hyowon Park
Pavan Gurudath
jung heon Song
Christopher Liman
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Corp, Antonio Gellineau, Andrei V Shchegrov, Hyowon Park, Pavan Gurudath, jung heon Song, Christopher Liman filed Critical Kla Corp
Publication of IL311357A publication Critical patent/IL311357A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/706831—Recipe selection or optimisation, e.g. select or optimise recipe parameters such as wavelength, polarisation or illumination modes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706839—Modelling, e.g. modelling scattering or solving inverse problems
    • G03F7/706841—Machine learning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8845—Multiple wavelengths of illumination or detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8848—Polarisation of light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8883—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges involving the calculation of gauges, generating models
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Data Mining & Analysis (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Evolutionary Computation (AREA)
  • Medical Informatics (AREA)
  • Artificial Intelligence (AREA)
  • Software Systems (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
IL311357A 2022-01-18 2022-12-22 Systems and methods for intended monitoring of semiconductor measurement quality IL311357A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/578,310 US12019030B2 (en) 2022-01-18 2022-01-18 Methods and systems for targeted monitoring of semiconductor measurement quality
PCT/US2022/053898 WO2023140957A1 (en) 2022-01-18 2022-12-22 Methods and systems for targeted monitoring of semiconductor measurement quality

Publications (1)

Publication Number Publication Date
IL311357A true IL311357A (en) 2024-05-01

Family

ID=87161663

Family Applications (1)

Application Number Title Priority Date Filing Date
IL311357A IL311357A (en) 2022-01-18 2022-12-22 Systems and methods for intended monitoring of semiconductor measurement quality

Country Status (6)

Country Link
US (1) US12019030B2 (https=)
JP (1) JP7784530B2 (https=)
KR (1) KR102901223B1 (https=)
CN (1) CN118140136A (https=)
IL (1) IL311357A (https=)
WO (1) WO2023140957A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250124599A1 (en) * 2023-10-11 2025-04-17 Applied Materials Israel Ltd. Automatic calibration of an examination tool

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US6023338A (en) 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6787773B1 (en) 2000-06-07 2004-09-07 Kla-Tencor Corporation Film thickness measurement using electron-beam induced x-ray microanalysis
US7068833B1 (en) 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6716646B1 (en) 2001-07-16 2004-04-06 Advanced Micro Devices, Inc. Method and apparatus for performing overlay measurements using scatterometry
WO2003054475A2 (en) 2001-12-19 2003-07-03 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6778275B2 (en) 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
JP4222927B2 (ja) 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7842933B2 (en) 2003-10-22 2010-11-30 Applied Materials Israel, Ltd. System and method for measuring overlay errors
US6937337B2 (en) 2003-11-19 2005-08-30 International Business Machines Corporation Overlay target and measurement method using reference and sub-grids
US7321426B1 (en) 2004-06-02 2008-01-22 Kla-Tencor Technologies Corporation Optical metrology on patterned samples
US7478019B2 (en) * 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
JP4887062B2 (ja) 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
US7406153B2 (en) 2006-08-15 2008-07-29 Jordan Valley Semiconductors Ltd. Control of X-ray beam spot size
US7873585B2 (en) 2007-08-31 2011-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US7929667B1 (en) 2008-10-02 2011-04-19 Kla-Tencor Corporation High brightness X-ray metrology
US8068662B2 (en) 2009-03-30 2011-11-29 Hermes Microvision, Inc. Method and system for determining a defect during charged particle beam inspection of a sample
JP5532804B2 (ja) 2009-09-30 2014-06-25 日本電気株式会社 信頼度判断装置、信頼度判断方法、及び信頼度判断用コンピュータプログラム
JP5764380B2 (ja) 2010-04-29 2015-08-19 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ Ｓｅｍ画像化法
US9046475B2 (en) 2011-05-19 2015-06-02 Applied Materials Israel, Ltd. High electron energy based overlay error measurement methods and systems
US9310296B2 (en) 2011-06-20 2016-04-12 Kla-Tencor Corporation Optimizing an optical parametric model for structural analysis using optical critical dimension (OCD) metrology
US10107621B2 (en) 2012-02-15 2018-10-23 Nanometrics Incorporated Image based overlay measurement with finite gratings
US10801975B2 (en) 2012-05-08 2020-10-13 Kla-Tencor Corporation Metrology tool with combined X-ray and optical scatterometers
US10013518B2 (en) 2012-07-10 2018-07-03 Kla-Tencor Corporation Model building and analysis engine for combined X-ray and optical metrology
US9129715B2 (en) 2012-09-05 2015-09-08 SVXR, Inc. High speed x-ray inspection microscope
WO2014062972A1 (en) 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection
US9826614B1 (en) 2013-03-15 2017-11-21 Kla-Tencor Corporation Compac X-ray source for semiconductor metrology
US10101670B2 (en) 2013-03-27 2018-10-16 Kla-Tencor Corporation Statistical model-based metrology
US9915522B1 (en) 2013-06-03 2018-03-13 Kla-Tencor Corporation Optimized spatial modeling for optical CD metrology
US10502694B2 (en) 2013-08-06 2019-12-10 Kla-Tencor Corporation Methods and apparatus for patterned wafer characterization
US9760018B2 (en) 2013-08-13 2017-09-12 Asml Netherlands B.V. Method and inspection apparatus and computer program product for assessing a quality of reconstruction of a value of a parameter of interest of a structure
US9846132B2 (en) 2013-10-21 2017-12-19 Kla-Tencor Corporation Small-angle scattering X-ray metrology systems and methods
US9885962B2 (en) 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
WO2015167753A2 (en) 2014-04-03 2015-11-05 Massachusetts Institute Of Technology Compact x-ray source for cd-saxs
US9494535B2 (en) 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
US10152678B2 (en) 2014-11-19 2018-12-11 Kla-Tencor Corporation System, method and computer program product for combining raw data from multiple metrology tools
US10324050B2 (en) 2015-01-14 2019-06-18 Kla-Tencor Corporation Measurement system optimization for X-ray based metrology
US10545104B2 (en) 2015-04-28 2020-01-28 Kla-Tencor Corporation Computationally efficient X-ray based overlay measurement
US10352695B2 (en) 2015-12-11 2019-07-16 Kla-Tencor Corporation X-ray scatterometry metrology for high aspect ratio structures
US10775323B2 (en) 2016-10-18 2020-09-15 Kla-Tencor Corporation Full beam metrology for X-ray scatterometry systems
US10481111B2 (en) 2016-10-21 2019-11-19 Kla-Tencor Corporation Calibration of a small angle X-ray scatterometry based metrology system
US11073487B2 (en) 2017-05-11 2021-07-27 Kla-Tencor Corporation Methods and systems for characterization of an x-ray beam with high spatial resolution
US10387755B2 (en) 2017-06-28 2019-08-20 Applied Materials, Inc. Classification, search and retrieval of semiconductor processing metrology images using deep learning/convolutional neural networks
US11333621B2 (en) 2017-07-11 2022-05-17 Kla-Tencor Corporation Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
US11519869B2 (en) 2018-03-20 2022-12-06 Kla Tencor Corporation Methods and systems for real time measurement control
US11060846B2 (en) 2018-12-19 2021-07-13 Kla Corporation Scatterometry based methods and systems for measurement of strain in semiconductor structures
CN114008535B (zh) 2019-07-04 2024-04-12 Asml荷兰有限公司 用于确定特征对性能的贡献的方法和设备
US11698251B2 (en) 2020-01-07 2023-07-11 Kla Corporation Methods and systems for overlay measurement based on soft X-ray Scatterometry

Also Published As

Publication number Publication date
TW202344831A (zh) 2023-11-16
KR102901223B1 (ko) 2025-12-16
JP2025501839A (ja) 2025-01-24
CN118140136A (zh) 2024-06-04
US12019030B2 (en) 2024-06-25
WO2023140957A1 (en) 2023-07-27
KR20240135737A (ko) 2024-09-12
JP7784530B2 (ja) 2025-12-11
US20230228692A1 (en) 2023-07-20

Similar Documents

Publication Publication Date Title
GB202012738D0 (en) System and method for monitoring deformation of dam slope
SG11201914011RA (en) Method and device for detecting fault of monitoring device
ES3063702T3 (en) Device and method for measuring wafers
EP4138978A4 (en) SYSTEMS AND METHODS FOR RADIOGRAPHIC MONITORING OF SHUNTS
GB2615500B (en) System and method for performng measurements of antenna under test offset from center of quiet zone
EP4449768A4 (en) Method and apparatus for setting an SS/PBCH block-based measurement timing configuration
EP4200598A4 (en) METHODS AND SYSTEMS FOR DETERMINING THE QUALITY OF SEMICONDUCTOR MEASUREMENTS
EP3745104C0 (en) TEMPERATURE MEASURING DEVICE AND METHOD FOR MEASURING THE TEMPERATURE
IL311357A (en) Systems and methods for intended monitoring of semiconductor measurement quality
ZA202109263B (en) Method and device for anomaly monitoring of personnel location
EP4379335A4 (en) METHOD AND APPARATUS FOR MEASURING THE SURFACE TEMPERATURE OF AN OBJECT
EP3973364A4 (en) SYSTEM AND METHOD FOR DETERMINING A HEALTH CONDITION AND AN ANOMALITY OF EQUIPMENT
EP4278298A4 (en) METHOD AND DEVICE FOR DETECTING THE STANDARDIZATION OF A WEARING MASK
GB202213172D0 (en) Dual-sensor head for pipe inspection robot and method of use
GB2607866B (en) Optical measurement apparatus and method of rapid measurement
EP4322828A4 (en) SYSTEM, METHOD AND APPARATUS FOR MEASURING TEMPERATURE ASYMMETRY OF BODY PARTS
EP4173348A4 (en) METHODS AND DEVICES FOR MANAGING RADIO COMMUNICATION QUALITY MEASUREMENT
GB2606258B (en) System for and method of detecting changes
GB202014235D0 (en) System and method of measuring grain orientations
GB202112829D0 (en) An airflow monitor and method of monitoring airflow
GB202014270D0 (en) Method and apparatus for measurement of an analyte
GB2616068B (en) Monitoring device and method of monitoring an area
GB2607041B (en) Optical measurement apparatus and method of rapid measurement
EP4445642A4 (en) SYSTEMS AND METHODS FOR MEASURING THE QUALITY OF AN EXPERIENCE
GB202316024D0 (en) Systems, apparatus and methods of condition monitoring