KR102898859B1 - 외부 자기장 측정을 위한 온도 보상 mtj 기반 감지 회로 - Google Patents

외부 자기장 측정을 위한 온도 보상 mtj 기반 감지 회로

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Publication number
KR102898859B1
KR102898859B1 KR1020227030197A KR20227030197A KR102898859B1 KR 102898859 B1 KR102898859 B1 KR 102898859B1 KR 1020227030197 A KR1020227030197 A KR 1020227030197A KR 20227030197 A KR20227030197 A KR 20227030197A KR 102898859 B1 KR102898859 B1 KR 102898859B1
Authority
KR
South Korea
Prior art keywords
temperature
sensing circuit
range
mtj
bias voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227030197A
Other languages
English (en)
Korean (ko)
Other versions
KR20220149676A (ko
Inventor
아누라그 모한
로버트 주커
Original Assignee
알레그로 마이크로시스템스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 알레그로 마이크로시스템스, 엘엘씨 filed Critical 알레그로 마이크로시스템스, 엘엘씨
Publication of KR20220149676A publication Critical patent/KR20220149676A/ko
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Publication of KR102898859B1 publication Critical patent/KR102898859B1/ko
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
    • G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves
    • G01D3/0365—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves the undesired influence being measured using a separate sensor, which produces an influence related signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/12—Measuring rate of change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0035—Calibration of single magnetic sensors, e.g. integrated calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G01R33/0082—Compensation, e.g. compensating for temperature changes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Measuring Magnetic Variables (AREA)
KR1020227030197A 2020-03-02 2021-02-22 외부 자기장 측정을 위한 온도 보상 mtj 기반 감지 회로 Active KR102898859B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062983809P 2020-03-02 2020-03-02
US62/983,809 2020-03-02
PCT/IB2021/051475 WO2021176296A1 (en) 2020-03-02 2021-02-22 Temperature compensated mtj-based sensing circuit for measuring an external magnetic field

Publications (2)

Publication Number Publication Date
KR20220149676A KR20220149676A (ko) 2022-11-08
KR102898859B1 true KR102898859B1 (ko) 2025-12-11

Family

ID=74797980

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227030197A Active KR102898859B1 (ko) 2020-03-02 2021-02-22 외부 자기장 측정을 위한 온도 보상 mtj 기반 감지 회로

Country Status (5)

Country Link
US (1) US11971463B2 (https=)
EP (1) EP4115192A1 (https=)
JP (1) JP2023516151A (https=)
KR (1) KR102898859B1 (https=)
WO (1) WO2021176296A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4130772B1 (en) 2021-08-05 2025-07-23 Allegro MicroSystems, LLC Magnetoresistive element having compensated temperature coefficient of tmr
WO2025097093A1 (en) 2023-11-03 2025-05-08 Spindrift Innovations, LLC Differential dual sensor contactless magnetic-mode electrical current sensors with tamper detection
US12584947B2 (en) 2023-11-03 2026-03-24 Spindrift Innovations, LLC Differential dual sensor contactless magnetic-mode electrical current sensors with tamper detection

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902925A (en) * 1996-07-01 1999-05-11 Integrated Sensor Solutions System and method for high accuracy calibration of a sensor for offset and sensitivity variation with temperature
EP1143536B1 (en) * 1998-12-15 2008-12-03 Asahi Kasei EMD Corporation Semiconductor device
KR100518565B1 (ko) * 2003-04-04 2005-10-04 삼성전자주식회사 반도체 온도 검출기, 이를 구비하여 셀프 리프레쉬 전류를감소시키는 반도체 메모리 장치, 및 그 셀프 리프레쉬 방법
US7809519B2 (en) * 2005-07-18 2010-10-05 Micron Technology, Inc. System and method for automatically calibrating a temperature sensor
US7923996B2 (en) * 2008-02-26 2011-04-12 Allegro Microsystems, Inc. Magnetic field sensor with automatic sensitivity adjustment
TWI384210B (zh) * 2009-08-14 2013-02-01 Sunplus Technology Co Ltd 溫度偵測裝置與溫度偵測方法
US9823092B2 (en) * 2014-10-31 2017-11-21 Allegro Microsystems, Llc Magnetic field sensor providing a movement detector
US10162017B2 (en) * 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
WO2018092336A1 (ja) * 2016-11-17 2018-05-24 株式会社村田製作所 電流センサ
EP3457154B1 (en) * 2017-09-13 2020-04-08 Melexis Technologies SA Stray field rejection in magnetic sensors
EP3467522B1 (en) * 2017-10-06 2023-02-22 STMicroelectronics S.r.l. A temperature compensation circuit, corresponding device and method
US10367518B2 (en) * 2018-02-07 2019-07-30 Intel Corporation Apparatus and method for single temperature subthreshold factor trimming for hybrid thermal sensor
US10955493B2 (en) * 2018-05-02 2021-03-23 Analog Devices Global Unlimited Company Magnetic sensor systems

Non-Patent Citations (4)

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Title
인용발명1 : 미국 특허출원공개공보 US2019/0339337호(2019.11.07.) 1부.*
인용발명2 : 일본 공개특허공보 특개2016-224064호(2016.12.28.) 1부.*
인용발명3 : 미국 특허출원공개공보 US2015/0023386호(2015.01.22.) 1부.*
인용발명4 : 미국 특허출원공개공보 US2019/0154735호(2019.05.23.) 1부.*

Also Published As

Publication number Publication date
JP2023516151A (ja) 2023-04-18
EP4115192A1 (en) 2023-01-11
WO2021176296A1 (en) 2021-09-10
US20230119854A1 (en) 2023-04-20
US11971463B2 (en) 2024-04-30
KR20220149676A (ko) 2022-11-08

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