JP2023516151A - 温度を補償する磁気トンネル接合をベースとする、外部磁場を計測する検知回路 - Google Patents

温度を補償する磁気トンネル接合をベースとする、外部磁場を計測する検知回路 Download PDF

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JP2023516151A
JP2023516151A JP2022551010A JP2022551010A JP2023516151A JP 2023516151 A JP2023516151 A JP 2023516151A JP 2022551010 A JP2022551010 A JP 2022551010A JP 2022551010 A JP2022551010 A JP 2022551010A JP 2023516151 A JP2023516151 A JP 2023516151A
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temperature
sensing circuit
mtj
bias voltage
circuit
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Japanese (ja)
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JP2023516151A5 (https=
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モハン・アヌラーグ
ズッカー・ロバート
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クロッカス・テクノロジー・ソシエテ・アノニム
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D3/00—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups
    • G01D3/028—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure
    • G01D3/036—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves
    • G01D3/0365—Indicating or recording apparatus with provision for the special purposes referred to in the subgroups mitigating undesired influences, e.g. temperature, pressure on measuring arrangements themselves the undesired influence being measured using a separate sensor, which produces an influence related signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/12—Measuring rate of change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0035—Calibration of single magnetic sensors, e.g. integrated calibration
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/007—Environmental aspects, e.g. temperature variations, radiation, stray fields
    • G01R33/0082—Compensation, e.g. compensating for temperature changes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Measuring Magnetic Variables (AREA)
JP2022551010A 2020-03-02 2021-02-22 温度を補償する磁気トンネル接合をベースとする、外部磁場を計測する検知回路 Pending JP2023516151A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062983809P 2020-03-02 2020-03-02
US62/983,809 2020-03-02
PCT/IB2021/051475 WO2021176296A1 (en) 2020-03-02 2021-02-22 Temperature compensated mtj-based sensing circuit for measuring an external magnetic field

Publications (2)

Publication Number Publication Date
JP2023516151A true JP2023516151A (ja) 2023-04-18
JP2023516151A5 JP2023516151A5 (https=) 2025-06-13

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JP2022551010A Pending JP2023516151A (ja) 2020-03-02 2021-02-22 温度を補償する磁気トンネル接合をベースとする、外部磁場を計測する検知回路

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Country Link
US (1) US11971463B2 (https=)
EP (1) EP4115192A1 (https=)
JP (1) JP2023516151A (https=)
KR (1) KR102898859B1 (https=)
WO (1) WO2021176296A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4130772B1 (en) 2021-08-05 2025-07-23 Allegro MicroSystems, LLC Magnetoresistive element having compensated temperature coefficient of tmr
WO2025097093A1 (en) 2023-11-03 2025-05-08 Spindrift Innovations, LLC Differential dual sensor contactless magnetic-mode electrical current sensors with tamper detection
US12584947B2 (en) 2023-11-03 2026-03-24 Spindrift Innovations, LLC Differential dual sensor contactless magnetic-mode electrical current sensors with tamper detection

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000036659A1 (fr) * 1998-12-15 2000-06-22 Asahi Kasei Kabushiki Kaisha Dispositif a semiconducteurs
JP2000512020A (ja) * 1996-07-01 2000-09-12 インテグレイテッド センサー ソルーションズ 温度によるオフセット及び感度の変動に対するセンサの高精度の較正のためのシステム及び方法
KR100518565B1 (ko) * 2003-04-04 2005-10-04 삼성전자주식회사 반도체 온도 검출기, 이를 구비하여 셀프 리프레쉬 전류를감소시키는 반도체 메모리 장치, 및 그 셀프 리프레쉬 방법
US20110038396A1 (en) * 2009-08-14 2011-02-17 Sunplus Technology Co., Ltd. Temperature detecting device and method
US20150023386A1 (en) * 2005-07-18 2015-01-22 Micron Technology, Inc. System and method for automatically calibrating a temperature sensor
JP2016224064A (ja) * 2008-02-26 2016-12-28 アレグロ・マイクロシステムズ・エルエルシー 自動感度調整付き磁場センサ
JP2017533436A (ja) * 2014-10-31 2017-11-09 アレグロ・マイクロシステムズ・エルエルシー 動き検出器を提供する磁場センサ
WO2018092336A1 (ja) * 2016-11-17 2018-05-24 株式会社村田製作所 電流センサ
US20190044528A1 (en) * 2018-02-07 2019-02-07 Intel Corporation Apparatus and method for single temperature subthreshold factor trimming for hybrid thermal sensor
US20190339337A1 (en) * 2018-05-02 2019-11-07 Analog Devices Global Unlimited Company Magnetic sensor systems

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10162017B2 (en) * 2016-07-12 2018-12-25 Allegro Microsystems, Llc Systems and methods for reducing high order hall plate sensitivity temperature coefficients
EP3457154B1 (en) * 2017-09-13 2020-04-08 Melexis Technologies SA Stray field rejection in magnetic sensors
EP3467522B1 (en) * 2017-10-06 2023-02-22 STMicroelectronics S.r.l. A temperature compensation circuit, corresponding device and method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000512020A (ja) * 1996-07-01 2000-09-12 インテグレイテッド センサー ソルーションズ 温度によるオフセット及び感度の変動に対するセンサの高精度の較正のためのシステム及び方法
WO2000036659A1 (fr) * 1998-12-15 2000-06-22 Asahi Kasei Kabushiki Kaisha Dispositif a semiconducteurs
KR100518565B1 (ko) * 2003-04-04 2005-10-04 삼성전자주식회사 반도체 온도 검출기, 이를 구비하여 셀프 리프레쉬 전류를감소시키는 반도체 메모리 장치, 및 그 셀프 리프레쉬 방법
US20150023386A1 (en) * 2005-07-18 2015-01-22 Micron Technology, Inc. System and method for automatically calibrating a temperature sensor
JP2016224064A (ja) * 2008-02-26 2016-12-28 アレグロ・マイクロシステムズ・エルエルシー 自動感度調整付き磁場センサ
US20110038396A1 (en) * 2009-08-14 2011-02-17 Sunplus Technology Co., Ltd. Temperature detecting device and method
JP2017533436A (ja) * 2014-10-31 2017-11-09 アレグロ・マイクロシステムズ・エルエルシー 動き検出器を提供する磁場センサ
WO2018092336A1 (ja) * 2016-11-17 2018-05-24 株式会社村田製作所 電流センサ
US20190044528A1 (en) * 2018-02-07 2019-02-07 Intel Corporation Apparatus and method for single temperature subthreshold factor trimming for hybrid thermal sensor
US20190339337A1 (en) * 2018-05-02 2019-11-07 Analog Devices Global Unlimited Company Magnetic sensor systems

Also Published As

Publication number Publication date
EP4115192A1 (en) 2023-01-11
KR102898859B1 (ko) 2025-12-11
WO2021176296A1 (en) 2021-09-10
US20230119854A1 (en) 2023-04-20
US11971463B2 (en) 2024-04-30
KR20220149676A (ko) 2022-11-08

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