KR102794696B1 - 낮은 산화물 트렌치 디싱 화학 기계적 연마 - Google Patents

낮은 산화물 트렌치 디싱 화학 기계적 연마 Download PDF

Info

Publication number
KR102794696B1
KR102794696B1 KR1020190079028A KR20190079028A KR102794696B1 KR 102794696 B1 KR102794696 B1 KR 102794696B1 KR 1020190079028 A KR1020190079028 A KR 1020190079028A KR 20190079028 A KR20190079028 A KR 20190079028A KR 102794696 B1 KR102794696 B1 KR 102794696B1
Authority
KR
South Korea
Prior art keywords
particles
group
ceria
particle size
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190079028A
Other languages
English (en)
Korean (ko)
Other versions
KR20200002709A (ko
Inventor
시아오보 시
크리슈나 피 머렐라
조셉 디 로즈
홍준 조우
마크 레오나드 오닐
Original Assignee
버슘머트리얼즈 유에스, 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 버슘머트리얼즈 유에스, 엘엘씨 filed Critical 버슘머트리얼즈 유에스, 엘엘씨
Publication of KR20200002709A publication Critical patent/KR20200002709A/ko
Application granted granted Critical
Publication of KR102794696B1 publication Critical patent/KR102794696B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H01L21/304—
    • H01L21/31051—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020190079028A 2018-06-29 2019-07-01 낮은 산화물 트렌치 디싱 화학 기계적 연마 Active KR102794696B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201862692639P 2018-06-29 2018-06-29
US201862692633P 2018-06-29 2018-06-29
US62/692,639 2018-06-29
US62/692,633 2018-06-29
US16/450,753 2019-06-24
US16/450,753 US20200002607A1 (en) 2018-06-29 2019-06-24 Low Oxide Trench Dishing Chemical Mechanical Polishing

Publications (2)

Publication Number Publication Date
KR20200002709A KR20200002709A (ko) 2020-01-08
KR102794696B1 true KR102794696B1 (ko) 2025-04-10

Family

ID=67137867

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190079028A Active KR102794696B1 (ko) 2018-06-29 2019-07-01 낮은 산화물 트렌치 디싱 화학 기계적 연마

Country Status (8)

Country Link
US (1) US20200002607A1 (https=)
EP (1) EP3587524A1 (https=)
JP (1) JP2020002357A (https=)
KR (1) KR102794696B1 (https=)
CN (1) CN110655869A (https=)
IL (1) IL267715A (https=)
SG (1) SG10201906088YA (https=)
TW (1) TWI791862B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021231090A1 (en) * 2020-05-11 2021-11-18 Versum Materials Us, Llc Novel pad-1 n-a-bottle (pib) technology for advanced chemical-mechanical planarization (cmp) slurries and processes
WO2021242755A1 (en) * 2020-05-29 2021-12-02 Versum Materials Us, Llc Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
KR102680336B1 (ko) * 2024-02-28 2024-07-02 주식회사 야놀자 Llm 서버 및 외부 서버와 연계하여 사용자가 요청한 기능을 자동으로 수행하는 챗봇 운영 서버 및 그 동작 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003101665A1 (en) 2002-06-03 2003-12-11 Ferro Corporation High selectivity cmp slurry
WO2018062401A1 (ja) 2016-09-29 2018-04-05 花王株式会社 研磨液組成物

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028620A (en) * 1988-09-15 1991-07-02 Rohm And Haas Company Biocide composition
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
US20120077419A1 (en) * 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)
WO2012032466A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
EP2614121B1 (en) * 2010-09-08 2019-03-06 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates for electrical, mechanical and optical devices
RU2588620C2 (ru) * 2010-12-10 2016-07-10 Басф Се Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния
MY166785A (en) * 2011-12-21 2018-07-23 Basf Se Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003101665A1 (en) 2002-06-03 2003-12-11 Ferro Corporation High selectivity cmp slurry
WO2018062401A1 (ja) 2016-09-29 2018-04-05 花王株式会社 研磨液組成物

Also Published As

Publication number Publication date
US20200002607A1 (en) 2020-01-02
KR20200002709A (ko) 2020-01-08
TW202000815A (zh) 2020-01-01
JP2020002357A (ja) 2020-01-09
EP3587524A1 (en) 2020-01-01
SG10201906088YA (en) 2020-01-30
CN110655869A (zh) 2020-01-07
IL267715A (en) 2019-10-31
TWI791862B (zh) 2023-02-11

Similar Documents

Publication Publication Date Title
JP7469006B2 (ja) 酸化物化学機械平坦化（ｃｍｐ）研磨組成物
US11667839B2 (en) Low oxide trench dishing chemical mechanical polishing
KR102794696B1 (ko) 낮은 산화물 트렌치 디싱 화학 기계적 연마
KR102937492B1 (ko) 높은 산화물 제거율을 지닌 얕은 트렌치 절연 화학 기계적 평탄화 조성물
KR102404499B1 (ko) 얇은 트렌치 격리 화학적 기계적 연마 슬러리
US11692110B2 (en) Low oxide trench dishing chemical mechanical polishing
KR102829597B1 (ko) 얕은 트랜치 절연(STI) 공정을 위한 SiN 제거율 억제 및 옥사이드 트랜치 디싱 감소
KR20200035365A (ko) 쉘로우 트렌치 분리(sti) 화학기계적 평탄화 연마(cmp)에서의, 질화물에 대한 산화물의 높은 선택도, 낮고 균일한 산화물 트렌치 디싱
JP2024536365A (ja) シャロートレンチアイソレーションのための化学機械平坦化研磨
CN114787304B (zh) 低氧化物沟槽凹陷的浅沟槽隔离化学机械平面化抛光
CN111500197B (zh) 具有可调节的氧化硅和氮化硅去除速率的浅沟槽隔离化学机械平面化抛光
KR20220113497A (ko) 산화물 트렌치 디싱이 낮은 얕은 트렌치 절연 화학 기계적 평탄화 연마

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000