KR102686261B1 - Deposition apparatus for sublimation materials - Google Patents

Deposition apparatus for sublimation materials Download PDF

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KR102686261B1
KR102686261B1 KR1020160162620A KR20160162620A KR102686261B1 KR 102686261 B1 KR102686261 B1 KR 102686261B1 KR 1020160162620 A KR1020160162620 A KR 1020160162620A KR 20160162620 A KR20160162620 A KR 20160162620A KR 102686261 B1 KR102686261 B1 KR 102686261B1
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sublimable material
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김호섭
하동우
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한국전기연구원
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    • H01L21/203—
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • H—ELECTRICITY
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

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Abstract

본 발명은, 본 발명은 승화성물질의 증착장치에 있어서, 승화성물질이 내부에 저장되고 외부 또는 내부의 열원에 의해 가열되며 상기 승화성물질이 승화되는 도가니본체와, 상기 도가니본체의 상부에 형성되며 상부가 개방된 개방부를 포함하는 도가니 및 상기 개방부에 결합되며 상기 승화성물질이 승화되어 외부로 배출되도록 중앙영역에 관통공이 형성된 덮개부를 포함하며, 상기 도가니의 소재는 그라파이트(garphite)로 이루어지고, 상기 덮개부의 소재는 몰리브덴(Mo), 탄탈럼(Ta) 및 이의 혼합으로 이루어진 군으로부터 선택되며, 상기 도가니 주변에는 도가니를 둘러싸는 인덕션 코일이 배치되어 상기 도가니 및 덮개부가 가열되며, 상기 도가니 및 덮개부를 구성하는 소재의 열전도도 차이에 의해 상기 덮개부가 상기 도가니보다 높은 온도로 가열된다.
이에 의해 도가니보다 높은 온도로 가열된 덮개부에 의해 승화성물질이 균일하고 안정적인 증착률로 기판에 증착되는 효과를 얻을 수 있다.The present invention relates to a deposition device for a sublimable material, a crucible body in which the sublimable material is stored inside, heated by an external or internal heat source, and the sublimable material is sublimated, and a crucible body on the top of the crucible body. A crucible is formed and includes an opening with an open top, and a cover coupled to the opening and having a through hole in the central area so that the sublimable material is sublimated and discharged to the outside. The material of the crucible is graphite. The material of the cover part is selected from the group consisting of molybdenum (Mo), tantalum (Ta), and mixtures thereof, and an induction coil surrounding the crucible is disposed around the crucible to heat the crucible and the cover part. The cover part is heated to a higher temperature than the crucible due to the difference in thermal conductivity of the materials constituting the crucible and the cover part.
As a result, the sublimable material is deposited on the substrate at a uniform and stable deposition rate by the cover heated to a higher temperature than the crucible.

Description

승화성물질의 증착장치 {Deposition apparatus for sublimation materials}{Deposition apparatus for sublimation materials}

본 발명은 승화성물질의 증착장치에 관한 것으로, 더욱 상세하게는 도가니보다 높은 온도로 가열된 덮개부에 의해 승화성물질이 균일하고 안정적인 증착률로 기판에 증착되는 것을 특징으로 하는 승화성물질의 증착장치에 관한 것이다.The present invention relates to a deposition device for a sublimable material, and more specifically, to a device for depositing a sublimable material on a substrate at a uniform and stable deposition rate by a cover heated to a higher temperature than the crucible. It is about deposition equipment.

기판에 박막을 형성하는 일반적인 방법으로는, 진공증착(vacuum evaporation), 전자빔증착(E-beam evaporation), 열증착(thermal evaporation), 스퍼터링(sputtering), 펄스레이저증착(pulsed laser deposition, PLD), 금속유기증착(metal organic deposition, MOD), 금속유기화학기상증착(metal organic chemical vapor deposition, MOCVD), 증기액상증착(hybride vapor phase epitaxy, HVPE) 등과 같은 물리기상증착법(physical vapor deposition, PVD) 또는 화학기상증착법(chemical vapor deposition, CVD)이 주로 이용되고 있다. 그 중 스퍼터링 증착법은 고에너지의 입자를 타켓에 조사하여 타겟을 구성하는 원자를 떨어내어 기판 위로 수송하여 박막을 형성하는 방법으로, 증착된 박막의 밀도가 높고 금속 타겟을 사용하는 경우에는 높은 증착률을 얻을 수 있다는 장점이 있다. 또한 진공증착법은 진공 중에서 증착원을 열적으로 증발 및 승화시켜 증착 입자를 만든 다음 기판 위로 입자를 수송하여 박막을 형성하는 방법으로, 고진공에서 사용할 수 있고 대면적으로 증착이 가능하며 시스템 제작 및 유지비용이 저렴한 장점이 있다.Common methods for forming a thin film on a substrate include vacuum evaporation, E-beam evaporation, thermal evaporation, sputtering, pulsed laser deposition (PLD), Physical vapor deposition (PVD), such as metal organic deposition (MOD), metal organic chemical vapor deposition (MOCVD), or hybrid vapor phase epitaxy (HVPE), or Chemical vapor deposition (CVD) is mainly used. Among them, sputtering deposition is a method of forming a thin film by irradiating high-energy particles to the target to drop the atoms constituting the target and transporting them onto the substrate. The density of the deposited thin film is high and the deposition rate is high when a metal target is used. There is an advantage in being able to obtain. In addition, vacuum deposition is a method of forming thin films by thermally evaporating and sublimating the deposition source in a vacuum to create deposition particles and then transporting the particles onto the substrate. It can be used in high vacuum, allows deposition on large areas, and reduces system production and maintenance costs. This has the advantage of being cheap.

이와 같이 기판에 박막을 형성하는 증착법으로는 종래기술 '대한민국특허청 등록특허 제10-0685827호 증발원, 증착장치 및 박막 형성방법', '대한민국특허청 등록특허 제10-0770458호 유기박막 증착용 도가니 장치', '대한민국특허청 공개특허 제10-2012-0057122호 증착용 도가니와 이를 이용한 증착장치'와 같이 많이 알려져 있다. 이와 같은 종래기술들은 주로 물리기상증착법을 이용하여 기판에 박막을 기상증착시킨다. 이러한 물리기상증착법을 이용하는 방법으로 인덕션 가열기를 이용한 방법은, 도 1에 도시된 바와 같이 도가니(1)에 승화성물질(10)을 저장하고 인덕션 가열기(3)를 통해 도가니(1)를 가열시키는 방법으로 이루어진다. In this way, the deposition method for forming a thin film on a substrate includes the prior art 'Korea Intellectual Property Office Patent No. 10-0685827 Evaporation source, deposition device and thin film formation method', and 'Korea Intellectual Property Office Patent No. 10-0770458 Crucible device for organic thin film deposition'. , 'Korea Intellectual Property Office Publication Patent No. 10-2012-0057122 crucible for deposition and deposition device using the same' are widely known. These prior technologies mainly use physical vapor deposition to vapor-deposit a thin film on a substrate. The method using this physical vapor deposition method using an induction heater involves storing the sublimable material 10 in a crucible 1 and heating the crucible 1 through an induction heater 3, as shown in FIG. 1. It is done in a way.

인덕션 가열기(3)를 이용하여 승화성물질(10)을 가열시키면 저장된 승화성물질(10)의 중앙영역보다 도가니(1)와 근접한 바깥영역이 빨리 가열된다. 또한 가열되는 승화성물질(10)이 증발하면서 한 방향으로만 증발하지 않고 다양한 방향으로 꺾이면서 증발할 수 있게 되는데, 이 경우 도가니(1)에 승화성물질(10)이 도가니(1)의 내벽에 부딪히면서 도가니(1)의 내벽에서 2차 증발이 발생한다. 도가니(1) 내벽의 온도가 균일하지 못할 경우 도가니(1) 전체에서 증발되어 분사되는 입자의 플러스(flux) 각도 의존성이 비대칭이 된다. 이뿐만 아니라 도가니(1)의 표면이 먼저 가열되기 때문에 도가니(1)의 바닥에 저장된 승화성물질(10)이 먼저 가열됨에 의해 상부의 승화성물질(10)이 붕괴되고 이로 인해 승화성물질(10)이 균일하게 승화되지 못한다는 문제점이 있다.When the sublimable material 10 is heated using the induction heater 3, the outer area close to the crucible 1 is heated faster than the central area of the stored sublimable material 10. In addition, as the heated sublimable material 10 evaporates, it does not evaporate in only one direction but can evaporate while being bent in various directions. In this case, the sublimable material 10 in the crucible 1 is attached to the inner wall of the crucible 1. Secondary evaporation occurs on the inner wall of the crucible (1). If the temperature of the inner wall of the crucible (1) is not uniform, the positive (flux) angle dependence of the particles evaporated and sprayed throughout the crucible (1) becomes asymmetric. In addition, because the surface of the crucible (1) is heated first, the sublimable material (10) stored at the bottom of the crucible (1) is heated first, causing the sublimable material (10) at the top to collapse, causing the sublimable material (10) to collapse. 10) There is a problem in that it is not sublimated uniformly.

대한민국특허청 등록특허 제10-0685827호Korea Intellectual Property Office Patent No. 10-0685827 대한민국특허청 등록특허 제10-0770458호Korea Intellectual Property Office Patent No. 10-0770458 대한민국특허청 공개특허 제10-2012-0057122호Korea Intellectual Property Office Public Patent No. 10-2012-0057122

따라서 본 발명의 목적은, 도가니보다 높은 온도로 가열된 덮개부에 의해 승화성물질이 균일하고 안정적인 증착률로 기판에 증착되는 것을 특징으로 하는 승화성물질의 증착장치를 제공하는 것이다.Therefore, the purpose of the present invention is to provide a deposition device for a sublimable material, wherein the sublimable material is deposited on a substrate at a uniform and stable deposition rate by a cover heated to a higher temperature than the crucible.

상기한 목적을 달성하기 위하여 본 발명은 승화성물질의 증착장치에 있어서, 승화성물질이 내부에 저장되고 외부 또는 내부의 열원에 의해 가열되며 상기 승화성물질이 승화되는 도가니본체와, 상기 도가니본체의 상부에 형성되며 상부가 개방된 개방부를 포함하는 도가니 및 상기 개방부에 결합되며 상기 승화성물질이 승화되어 외부로 배출되도록 중앙영역에 관통공이 형성된 덮개부를 포함하며, 상기 도가니의 소재는 그라파이트(garphite)로 이루어지고, 상기 덮개부의 소재는 몰리브덴(Mo), 탄탈럼(Ta) 및 이의 혼합으로 이루어진 군으로부터 선택되며, 상기 도가니 주변에는 도가니를 둘러싸는 인덕션 코일이 배치되어 상기 도가니 및 덮개부가 가열되며, 상기 도가니 및 덮개부를 구성하는 소재의 열전도도 차이에 의해 상기 덮개부가 상기 도가니보다 높은 온도로 가열되는 것을 특징으로 한다.
상기 덮개부의 관통공은 상기 덮개부의 전체 넓이에 대해 10 내지 30%의 넓이로 형성된 것을 특징으로 한다.
In order to achieve the above object, the present invention provides a deposition device for a sublimable material, comprising a crucible body in which the sublimable material is stored inside, heated by an external or internal heat source, and the sublimable material is sublimated, and the crucible body. It is formed on the upper part of the crucible and includes an opening with an open upper part, and a cover part coupled to the opening and having a through hole in the central area so that the sublimable material is sublimated and discharged to the outside. The material of the crucible is graphite ( garphite), and the material of the cover part is selected from the group consisting of molybdenum (Mo), tantalum (Ta), and mixtures thereof, and an induction coil surrounding the crucible is disposed around the crucible to heat the crucible and the cover part. The cover part is heated to a higher temperature than the crucible due to a difference in thermal conductivity of the materials constituting the crucible and the cover part.
The through hole of the cover part is characterized in that it is formed with an area of 10 to 30% of the total area of the cover part.

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상술한 본 발명의 구성에 따르면, 도가니보다 높은 온도로 가열된 덮개부에 의해 승화성물질이 균일하고 안정적인 증착률로 기판에 증착되는 효과를 얻을 수 있다.According to the configuration of the present invention described above, the effect of depositing the sublimable material on the substrate at a uniform and stable deposition rate can be obtained by the cover portion heated to a higher temperature than the crucible.

도 1은 종래기술에 따른 승화성물질의 증착장치를 나타낸 단면도이고,
도 2 및 도 3은 본 발명의 실시예에 따른 승화성물질의 증착장치를 나타낸 단면도이다.1 is a cross-sectional view showing a deposition device for a sublimable material according to the prior art;
Figures 2 and 3 are cross-sectional views showing a deposition apparatus for a sublimable material according to an embodiment of the present invention.

이하 본 발명의 실시예에 따른 승화성물질의 증착장치를 도면을 통해 상세히 설명한다.Hereinafter, an apparatus for depositing a sublimable material according to an embodiment of the present invention will be described in detail with reference to the drawings.

도 2에 도시된 바와 같이 승화성물질의 증착장치(100)는 도가니(110) 및 덮개부(130)를 포함한다. 도가니(110)는 승화성물질(10)이 내부에 저장되는 도가니본체(111)와, 도가니본체(111)의 상부에 형성되며 상부가 개방된 개방부(113)를 포함한다. 즉 도가니(110)는 측면 및 하부는 차단되고 상부만 개방된 통형상으로 이루어지며, 내부에 승화성물질(10)이 저장되도록 형성된다. 승화성물질(10)은 도가니(110)의 외부에 존재하거나 또는 도가니(110)의 내부에 포함된 열원에 의해 가열되며, 가열됨에 의해 고체에서 기체로 승화되어 개방부(113)를 지나 외부에 배치되는 기판에 박막형태로 증착된다.As shown in FIG. 2, the apparatus 100 for depositing a sublimable material includes a crucible 110 and a cover portion 130. The crucible 110 includes a crucible body 111 in which the sublimable material 10 is stored, and an opening 113 formed at the top of the crucible body 111 and having an open top. That is, the crucible 110 has a cylindrical shape with the sides and bottom blocked and only the top open, and is formed to store the sublimable material 10 therein. The sublimable material 10 exists on the outside of the crucible 110 or is heated by a heat source contained inside the crucible 110, and is sublimated from a solid to a gas by being heated and passes through the opening 113 to the outside. It is deposited in the form of a thin film on the substrate on which it is placed.

여기서 외부 열원 또는 내부 열원의 경우 인덕션 코일(150)을 사용할 수 있는데, 인덕션 코일(150)의 중심으로 갈수록 자기장의 세기가 커져 유도 가열이 잘 이루어지기 때문에 인덕션 코일(150)의 중심에 도가니(110)가 배치되도록 위치를 조절하여 승화성물질(10)의 승화가 용이하도록 하는 것이 바람직하다.Here, in the case of an external heat source or an internal heat source, the induction coil 150 can be used. Since the strength of the magnetic field increases toward the center of the induction coil 150, induction heating is easily performed, the crucible 110 is placed in the center of the induction coil 150. ) is preferably positioned to facilitate sublimation of the sublimable material 10.

승화성물질(10)은 물질의 상태변화에서 고체가 액체상태를 거치지 않고 직접 기체로 변하거나 기체가 직접 고체로 변하는 물질을 의미하며, 본 발명에서는 고체상태의 승화성물질(10)이 저장된 상태에서 가열하여 기체상태로 승화시켜 이를 박막으로 증착시키는 기술에 관한 것이다.The sublimable material 10 refers to a material in which a solid changes directly into a gas or a gas directly changes into a solid without going through a liquid state in a state change of the material. In the present invention, the sublimable material 10 in a solid state is stored. It relates to a technology that sublimates gas to a gaseous state by heating it and deposits it into a thin film.

도가니(110)의 개방부(113)에는 개방되는 넓이를 일부 차단하는 덮개부(130)가 결합된다. 덮개부(130)는 개방부(113)를 덮으면서 승화성물질(10)이 승화되어 외부로 배출되도록 중앙영역에 관통공(131)이 형성된다. 즉 덮개부(130)는 개방부(113)의 넓이를 감소시키며 관통공(131)을 통해 승화성물질(10)이 배출되는 넓이를 제한하는 역할을 한다. A cover portion 130 that partially blocks the open area is coupled to the opening portion 113 of the crucible 110. The cover part 130 covers the opening part 113 and has a through hole 131 formed in the central area so that the sublimable material 10 is sublimated and discharged to the outside. That is, the cover portion 130 reduces the area of the opening portion 113 and serves to limit the area through which the sublimable material 10 is discharged through the through hole 131.

도가니(110)에 열을 가하여 도가니(110)가 가열되면 일반적으로 도가니(110)의 안쪽에 저장된 승화성물질(10)보다 도가니(110)의 내표면과 접촉하고 있는 바깥쪽의 승화성물질(10)이 열에 의해 더 빨리 가열된다. 도가니(110)에 저장된 승화성물질(10)의 경우 도가니(110)의 열이 골고루 승화성물질(10)에 전달되지 못하면 승화성물질(10)이 균일한 증착률로 증발되지 못한다는 문제점이 있다. 특히 도가니(110)의 하부에서 승화성물질(10)이 가열되면 승화성물질(10)이 승화하면서 상부에 고체상태의 승화성물질(10)이 붕괴되는 현상이 발생하게 되어 균일한 증착률로 승화되지 못한다는 문제점이 있다. When the crucible 110 is heated by applying heat to the crucible 110, the sublimable material on the outside (110) is generally in contact with the inner surface of the crucible 110 rather than the sublimable material (10) stored on the inside of the crucible 110. 10) It heats up faster with this heat. In the case of the sublimable material 10 stored in the crucible 110, if the heat of the crucible 110 is not evenly transferred to the sublimable material 10, the problem is that the sublimable material 10 is not evaporated at a uniform deposition rate. there is. In particular, when the sublimable material 10 is heated in the lower part of the crucible 110, the sublimable material 10 sublimates and the solid sublimable material 10 at the top collapses, causing a uniform deposition rate. There is a problem that it cannot be sublimated.

따라서 승화성물질(10)이 승화된 후 바로 도가니(110)를 빠져나가지 않고 어느 정도 머물러 있도록 도가니(110)의 개방부(113)에 덮개부(131)를 형성하여 승화성물질(10)이 균일하게 방출되도록 한다. 이와 같이 덮개부(130)를 빠져나가지 못한 승화성물질(10)은 도가니(110) 내에서 에너지가 높은 상태에서 기체로 쌓이게 되고 도가니(110) 내부의 압력이 점점 증가하게 된다. 승화성물질(10)이 지속적으로 승화되어 도가니(110) 내부의 압력이 증가하게 되면 내부에서 균일하게 섞이던 승화성물질(10)이 외부로 방출되어 외부에 배치된 기판에 증착된다. 즉 승화성물질(10)이 덮개부(130)에 의해 바로 방출되지 않고 도가니(110)에서 머무르면서 점점 균일한 기압을 이루게 되다가 도가니(110) 내부의 압력이 증가하게 되면 도가니(110)의 외부로 균일한 증착률로 배출된다.Therefore, a cover portion 131 is formed in the opening 113 of the crucible 110 so that the sublimable material 10 does not immediately exit the crucible 110 after sublimation but remains for some time, so that the sublimable material 10 can remain in the crucible 110 for some time. Ensure that it is released evenly. In this way, the sublimable material 10 that fails to escape the cover 130 is accumulated as a gas in a high energy state within the crucible 110, and the pressure inside the crucible 110 gradually increases. When the sublimable material 10 continues to sublimate and the pressure inside the crucible 110 increases, the sublimable material 10 that was uniformly mixed inside is released to the outside and deposited on a substrate placed outside. That is, the sublimable material 10 is not immediately released by the cover part 130, but stays in the crucible 110 to gradually achieve a uniform air pressure, and when the pressure inside the crucible 110 increases, it is released to the outside of the crucible 110. It is discharged at a uniform deposition rate.

이때 도가니(110)를 통해 가열된 승화성물질(10)이 덮개부(130)에 의해 방출이 차단될 때 덮개부(130)에 증착되지 않도록 덮개부(130)는 도가니(110)보다 높은 온도로 이루어져야 한다. 덮개부(130)의 온도보다 낮을 경우 도가니(110)의 온도에 의해 승화된 승화성물질(10)이 덮개부(130)에 증착되어 덮개부(130)를 빠져나가지 못하게 되어 승화성물질(10)이 덮개부(130)의 관통공(131)에 쌓여 관통공(131)을 막을 우려가 있다. 이와 같이 도가니(110)보다 덮개부(130)가 높은 온도로 가열되도록 도가니(110)의 소재는 그라파이트(graphite)로 이루어지며, 덮개부(130)의 소재는 몰리브덴(Mo), 탄탈럼(Ta) 및 이의 혼합으로 이루어진 군에서 선택되는 것이 바람직하다. 도가니(110) 주변을 둘러싸는 인덕션 코일(150)을 통해 도가니(110) 및 덮개부(130)를 가열할 경우 도가니(110)의 소재인 그라파이트보다 덮개부(130)의 소재인 몰리브덴 및 탄탈럼이 열전도도가 우수하기 때문에 더 높은 온도로 가열되어 덮개부(130)가 더 높은 온도로 존재하게 된다. 이를 통해 승화성물질(10)이 도가니(110)의 가열에 의해 승화되더라도 덮개부(130)에 증착되지 않고 도가니(110)의 내부에서 기체상태로 계속 존재할 수 있게 된다.At this time, the cover part 130 is maintained at a higher temperature than the crucible 110 so that the sublimable material 10 heated through the crucible 110 is not deposited on the cover part 130 when its emission is blocked by the cover part 130. It must be done with If the temperature is lower than the temperature of the cover part 130, the sublimable material 10 sublimated by the temperature of the crucible 110 is deposited on the cover part 130 and cannot escape the cover part 130, so the sublimable material 10 ) may accumulate in the through hole 131 of the cover portion 130 and block the through hole 131. In this way, the material of the crucible 110 is made of graphite so that the cover part 130 is heated to a higher temperature than the crucible 110, and the material of the cover part 130 is molybdenum (Mo) and tantalum (Ta). ) and mixtures thereof. When heating the crucible 110 and the cover 130 through the induction coil 150 surrounding the crucible 110, molybdenum and tantalum, which are the materials of the cover 130, are used more than graphite, which is the material of the crucible 110. Because this thermal conductivity is excellent, it is heated to a higher temperature and the cover portion 130 exists at a higher temperature. Through this, even if the sublimable material 10 is sublimated by heating the crucible 110, it is not deposited on the cover portion 130 and can continue to exist in a gaseous state inside the crucible 110.

경우에 따라서 도 3에 도시된 바와 같이 덮개부(130)의 온도가 도가니(110)의 온도보다 높은 온도로 이루어지도록 덮개부(130)에는 덮개히터(133)가 결합되어 덮개부(130)를 가열할 수도 있다. 덮개부(130)에 덮개히터(133)가 결합될 경우 도가니(110) 및 덮개부(130)의 소재를 특별히 정하지 않더라도 덮개부(130)가 도가니(110)보다 높은 온도로 가열되어 승화성물질(10)이 덮개부(130)에 증착되지 않거나 또는 증착되더라도 바로 승화되어 도가니(110) 내에서 균일한 기압으로 존재할 수 있게 된다. 이러한 도가니(110) 주변에는 덮개히터(133)보다 낮은 온도로 도가니(110)를 가열하는 도가니히터(115)가 배치될 수 있는데, 도가니히터(115)를 통해 도가니(110) 내의 승화성물질(10)을 보다 빠르게 승화시킬 수 있다.In some cases, as shown in FIG. 3, a cover heater 133 is coupled to the cover part 130 so that the temperature of the cover part 130 is higher than the temperature of the crucible 110. It can also be heated. When the cover heater 133 is coupled to the cover part 130, even if the materials of the crucible 110 and the cover part 130 are not specifically determined, the cover part 130 is heated to a higher temperature than the crucible 110, thereby forming a sublimable material. (10) is not deposited on the cover part 130, or even if it is deposited, it is immediately sublimated and can exist at a uniform air pressure within the crucible 110. A crucible heater 115 may be placed around the crucible 110 to heat the crucible 110 to a lower temperature than the cover heater 133. The sublimable material in the crucible 110 can be sublimated through the crucible heater 115. 10) can be sublimated more quickly.

승화성물질(10)이 외부로 방출되도록 덮개부(130)에 형성된 관통공(131)은 덮개부(130)의 전체 넓이에 대해 10 내지 30%의 넓이로 형성될 수 있다. 관통공(131)이 덮개부(130)의 넓이에 대해 10% 미만일 경우 승화성물질(10)이 제때 방출되지 못하여 도가니(110) 내부 압력이 증가할 수 있으며, 이 경우 도가니(110)가 터지거나 손상되는 문제가 발생할 수 있다. 또한 관통공(131)이 30%를 초과할 경우 승화성물질(10)의 증착률이 균일하지 않은 상태이거나 플럭스(flux)의 대칭성이 깨진 상태에서 외부로 방출되어 기판에 증착될 수 있는 문제점이 생긴다.The through hole 131 formed in the cover part 130 to discharge the sublimable material 10 to the outside may be formed to have an area of 10 to 30% of the total area of the cover part 130. If the through hole 131 is less than 10% of the area of the cover portion 130, the sublimable material 10 may not be released in time and the pressure inside the crucible 110 may increase, and in this case, the crucible 110 may burst. Otherwise, damage may occur. In addition, if the through hole 131 exceeds 30%, there is a problem that the deposition rate of the sublimable material 10 is not uniform or the symmetry of the flux is broken and it may be discharged to the outside and deposited on the substrate. It happens.

종래에는 도가니보다 온도가 높은 덮개부를 포함하고 있지 않기 때문에 도가니의 표면에서 먼저 승화되는 승화성물질이 외부의 기판에 증착되어 균일하지 못한 증착률을 가지는 박막이 형성되었다. 하지만 본 발명의 경우 도가니(110)보다 높은 온도로 가열된 덮개부(130)에 의해 승화성물질(10)이 균일하고 안정적인 증착률로 기판에 증착되는 효과를 얻을 수 있다.Conventionally, since it does not include a cover part with a temperature higher than that of the crucible, the sublimable material that sublimates first on the surface of the crucible is deposited on the external substrate, forming a thin film with an uneven deposition rate. However, in the case of the present invention, the sublimable material 10 can be deposited on the substrate at a uniform and stable deposition rate by the cover part 130 heated to a higher temperature than the crucible 110.

1: 도가니
3: 인덕션 가열기
10: 승화성물질
100: 증착장치
110: 도가니
111: 도가니본체
113: 개방부
115: 도가니히터
130: 덮개부
131: 관통공
133: 덮개히터
150: 인덕션 코일1: Crucible
3: Induction heater
10: Sublimable material
100: deposition device
110: Crucible
111: Crucible body
113: opening
115: Crucible heater
130: cover part
131: Through hole
133: Cover heater
150: Induction coil

Claims (6)

승화성물질의 증착장치에 있어서,
승화성물질이 내부에 저장되고 외부 또는 내부의 열원에 의해 가열되며 상기 승화성물질이 승화되는 도가니본체와, 상기 도가니본체의 상부에 형성되며 상부가 개방된 개방부를 포함하는 도가니; 및
상기 개방부에 결합되며 상기 승화성물질이 승화되어 외부로 배출되도록 중앙영역에 관통공이 형성된 덮개부;를 포함하며,
상기 도가니의 소재는 그라파이트(garphite)로 이루어지고, 상기 덮개부의 소재는 몰리브덴(Mo), 탄탈럼(Ta) 및 이의 혼합으로 이루어진 군으로부터 선택되며,
상기 도가니 주변에는 도가니를 둘러싸는 인덕션 코일이 배치되어 상기 도가니 및 덮개부가 가열되며,
상기 도가니 및 덮개부를 구성하는 소재의 열전도도 차이에 의해 상기 덮개부가 상기 도가니보다 높은 온도로 가열되고,
상기 도가니본체는 하측에서 상측으로 갈수록 단면적이 증가하도록 형성되고, 상기 도가니를 둘러싸는 인덕션 코일은 상기 도가니본체의 하측에서 상측으로 갈수록 도가니본체와 인접하도록 배치되는 것을 특징으로 하는 승화성물질의 증착장치.
In the deposition device for sublimable materials,
A crucible comprising a crucible body in which a sublimable material is stored inside, heated by an external or internal heat source, and the sublimable material is sublimated, and an opening formed at the top of the crucible body and having an open top; and
It includes a cover part coupled to the opening part and having a through hole formed in the central area so that the sublimable material is sublimated and discharged to the outside,
The material of the crucible is made of graphite, and the material of the cover part is selected from the group consisting of molybdenum (Mo), tantalum (Ta), and mixtures thereof,
An induction coil surrounding the crucible is disposed around the crucible to heat the crucible and the cover portion,
The cover part is heated to a higher temperature than the crucible due to a difference in thermal conductivity of the materials constituting the crucible and the cover part,
The crucible body is formed so that the cross-sectional area increases from the bottom to the top, and the induction coil surrounding the crucible is arranged to be adjacent to the crucible body from the bottom to the top of the crucible body. A deposition device for a sublimable material, characterized in that .
 삭제delete 삭제delete 삭제delete 삭제delete 제 1항에 있어서,
상기 덮개부의 관통공은 상기 덮개부의 전체 넓이에 대해 10 내지 30%의 넓이로 형성된 것을 특징으로 하는 승화성물질의 증착장치.According to clause 1,
A deposition device for a sublimable material, characterized in that the through hole of the cover part is formed to have an area of 10 to 30% of the total area of the cover part.
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