KR102670273B1 - Display device and method for fabrication thereof - Google Patents

Abstract

A display device and a method of manufacturing the same are provided. The display device includes a glass substrate including a first side, a second side facing the first side, and a side disposed between the first side and the second side, and disposed on the first side of the glass substrate. and a display area including an outermost structure disposed adjacent to an edge of the side of the glass substrate, and a plurality of light emitting regions disposed on the first side of the glass substrate at a greater distance from the edge than the outermost structure. Includes, the side of the glass substrate has a curved shape and the edge protrudes outward, the side is a first side between the edge and the first surface, and between the edge and the second surface. and includes a second side having a different curvature from the first side, and the glass substrate includes an edge region of the first side adjacent to the edge where processing traces remain.

Description

Display device and method of manufacturing the same {DISPLAY DEVICE AND METHOD FOR FABRICATION THEREOF}

The present invention relates to a display device and a method of manufacturing the same.

As the information society develops, the demand for display devices for displaying images is increasing in various forms. For example, display devices are applied to various electronic devices such as smartphones, digital cameras, laptop computers, navigation systems, and smart televisions. The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, or an organic light emitting display device. Among these flat display devices, a light emitting display device includes a light emitting element in which each pixel of the display panel can emit light on its own, allowing images to be displayed without a backlight unit providing light to the display panel.

A display device includes a display area that displays an image and a non-display area arranged around the display area, for example, to surround the display area. Recently, the width of the non-display area is gradually decreasing in order to increase immersion in the display area and enhance the aesthetics of the display device.

Meanwhile, in the manufacturing process of a display device, a display device may be formed by cutting a mother substrate including a plurality of display cells along a plurality of display cells formed on the mother substrate.

The non-display area may include a first non-display area where wiring and circuits for driving the display area are disposed and a second non-display area corresponding to a margin for a cutting process in the manufacturing process. Since there is a limit to reducing the wiring and circuits in the first non-display area, ways to reduce the width of the second non-display area are being studied.

The problem to be solved by the present invention is to provide a display device that can minimize the width of the non-display area and a method of manufacturing the same.

The problem to be solved by the present invention is to provide a display device and a manufacturing method thereof that can improve the mechanical strength of the display device.

The problems of the present invention are not limited to the problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the description below.

A display device according to an embodiment for solving the above problem includes a glass substrate including a first side, a second side facing the first side, and a side disposed between the first side and the second side; an outermost structure disposed on the first side of the glass substrate, adjacent to an edge of the side of the glass substrate, and spaced further from the edge than the outermost structure on the first side of the glass substrate. a display area including a plurality of arranged light-emitting areas, wherein the side surface of the glass substrate has a curved shape and the edge protrudes outward, and the side surface has a first surface between the edge and the first surface. a side, and a second side between the edge and the second surface and having a different curvature from the first side, wherein the glass substrate includes an edge region of the first surface adjacent to the edge where processing traces remain. do.

The curvature of the second side may be 200㎛R to 300㎛R.

The length of the first side is shorter than the length of the second side, and the second side may have a gentler curvature than the first side.

The protruding width of the second side from the end of the second side to the edge may range from 10% to 20% of the total thickness of the glass substrate.

The width at which the second side protrudes to the edge may range from 20 μm to 40 μm.

The diameter of the glass pores formed on the surface of the first side may be smaller than the diameter of the glass pores formed on the surface of the second side.

The diameter of the glass pores formed on the surface of the first side may range from 5 ㎛ to 30 ㎛, and the diameter of the glass pores formed on the surface of the second side may range from 30 ㎛ to 50 ㎛.

The vertical distance between the second side of the glass substrate and the virtual side parallel to the edge may range from 50% to 60% of the total thickness of the glass substrate.

The vertical distance may range from 100㎛ to 120㎛.

The minimum distance from the edge of the glass substrate to the outermost structure may be 130 μm or less.

The width of the edge area may be 50㎛ or less.

It further includes an encapsulation layer covering the display area and the outermost structure, wherein the encapsulation layer includes a first encapsulation inorganic layer, an encapsulation organic layer disposed on the first encapsulation inorganic layer, and an encapsulation organic layer disposed on the encapsulation organic layer. It may include a second inorganic encapsulation film, and the first inorganic encapsulation film and the second inorganic encapsulation film may cover the outermost structure.

A method of manufacturing a display device according to an embodiment to solve the above problem includes preparing a mother substrate and forming a plurality of display cells on a first side of the mother substrate, the opposite side of the first side of the mother substrate. Forming a cutting line around the display cell by irradiating a laser on a second side, and etching the mother substrate along the second side and the cutting line to separate the substrate on which the display cell is formed. And, the laser forms a plurality of laser spots spaced apart from each other between the first surface and the second surface of the mother substrate, and the plurality of laser spots form a trajectory having a curvature within the three-dimensional space of the mother substrate. forms.

The curvature of the trajectory formed by the plurality of laser spots may have a size of approximately 500㎛R.

A processing area in the thickness direction where the laser spots are formed in the mother substrate across the thickness direction of the mother substrate may range from 95% to 100% of the thickness of the mother substrate.

The position of the outermost spot of curvature in the trajectory formed by the plurality of laser spots may be located at a point approximately 30% of the processing area in the thickness direction of the laser spots from the second surface.

The processing area in the thickness direction where the laser spots are formed has a range of 450㎛ to 500㎛, and the position of the outermost spot of curvature may be spaced apart from the second surface by a distance of about 150㎛.

An incident angle between the second surface of the plurality of laser spots and an imaginary line connecting the four laser spots located closest to the second surface has a range of 70° to 90°, and the plurality of lasers An emission angle between the first surface of the spots and an imaginary line connecting the four laser spots located closest to the first surface may range from 35° to 40°.

The horizontal interval between the laser spot located closest to the second surface among the plurality of laser spots and the curvature outermost spot located at the outermost curvature in the trajectory has a range of 10 μm to 20 μm, and the plurality of laser spots Among them, the horizontal interval between the laser spot located closest to the first surface and the outermost curvature spot located at the outermost curvature in the trajectory may range from 120 ㎛ to 150 ㎛.

The pulse width of the laser may range from 10 μJ to 500 μJ, and the length of the laser spot in the thickness direction may range from 20 μm to 25 μm.

Specific details of other embodiments are included in the detailed description and drawings.

A display device according to an embodiment can minimize an area that unnecessarily occupies space on the outside of the display panel.

The manufacturing method of a display device according to an embodiment includes a laser irradiation process and an etching process, and can improve the efficiency of the manufacturing process.

Effects according to the embodiments are not limited to the content exemplified above, and further various effects are included in the present specification.

1 is a schematic perspective view of a display device according to an embodiment.
Figure 2 is a plan view showing a display panel according to one embodiment.
FIG. 3 is a cross-sectional view showing an example of a display device taken along line II′ of FIG. 1 .
FIG. 4 is a cross-sectional view showing an example of the display device in FIG. 3 in which the circuit board is bent.
Figure 5 is a cross-sectional view showing an example of a display area of a display panel according to an embodiment.
FIG. 6 is a layout diagram showing an example of area A of FIG. 2 in detail.
FIG. 7 is a layout diagram showing an example of area B in FIG. 2 in detail.
FIG. 8 is a cross-sectional view showing an example of a display panel taken along line II-II′ of FIG. 6 .
FIG. 9 is a cross-sectional view showing an example of a display panel taken along line III-III' of FIG. 7.
FIG. 10 is a cross-sectional view showing the edge shape of the substrate shown in FIGS. 8 and 9 in more detail.
FIG. 11 is a micrograph showing an edge of a substrate of a display panel according to one embodiment.
FIG. 12 is a micrograph showing a cut surface of an edge of a display panel substrate according to an exemplary embodiment.
FIG. 13 is a cross-sectional view showing area C of FIG. 8 in more detail.
FIG. 14 is a cross-sectional view showing area D of FIG. 9 in more detail.
FIG. 15 is a flowchart showing a manufacturing process of a display device according to an embodiment.
16 to 20 are perspective views sequentially showing the manufacturing process of a display device according to an embodiment.
FIGS. 21 and 22 are cross-sectional views showing a laser irradiation process during the manufacturing process of a display device according to an embodiment.
FIG. 23 is a graph showing trajectories of laser spots irradiated during the manufacturing process of a display device according to an embodiment.
FIG. 24 is a micrograph showing laser spots formed on the mother substrate along the trajectory of the laser spots in FIG. 23.
25 to 27 are cross-sectional views showing etching and cutting processes during the manufacturing process of a display device according to an embodiment.
Figure 28 is a cross-sectional view showing a partial area of a display panel according to another embodiment.
FIG. 29 is a cross-sectional view showing an etching process during the manufacturing process of the display device of FIG. 28.
Figure 30 is a cross-sectional view showing a partial area of a display panel according to another embodiment.
FIG. 31 is a micrograph showing the edge of the substrate in the display panel of FIG. 30.
Figure 32 is a plan view showing a non-display area of a display panel according to another embodiment.
FIG. 33 is a cross-sectional view taken along line S2-S2' of FIG. 32.
Figure 34 is a cross-sectional view showing a partial area of a display panel according to another embodiment.

The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. The present embodiments only serve to ensure that the disclosure of the present invention is complete and that common knowledge in the technical field to which the present invention pertains is not limited. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.

When an element or layer is referred to as “on” another element or layer, it includes all cases where another element or layer is placed directly on or in between. Likewise, the terms “Below,” “Left,” and “Right” refer to all elements that are directly adjacent to other elements or have intervening layers or other materials. Includes. Like reference numerals refer to like elements throughout the specification.

Although first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be a second component within the technical spirit of the present invention.

Hereinafter, embodiments will be described with reference to the attached drawings.

1 is a perspective view showing a display device according to an embodiment. Figure 2 is a plan view showing a display panel according to one embodiment.

Referring to FIGS. 1 and 2, the display device 10 according to one embodiment is a device that displays moving images or still images, and may be used in a mobile phone, a smart phone, or a tablet personal computer. ), and portable electronic devices such as smart watches, watch phones, mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigation, UMPCs (Ultra Mobile PCs), etc. It can be used as a display screen for various products such as televisions, laptops, monitors, billboards, and Internet of Things (IOT) devices.

The display device 10 according to an embodiment includes an organic light emitting display device using an organic light emitting diode, a quantum dot light emitting display device including a quantum dot light emitting layer, an inorganic light emitting display device including an inorganic semiconductor, and an ultra-small light emitting diode (micro or nano light). It may be a light emitting display device such as a miniature light emitting display device using an emitting diode (micro LED or nano LED). Below, the description focuses on the fact that the display device 10 is an organic light emitting display device, but the present invention is not limited thereto.

The display device 10 according to one embodiment includes a display panel 100, a driving integrated circuit (IC) 200, and a circuit board 300.

The display panel 100 may be formed as a rectangular plane having a long side in a first direction (X-axis direction) and a short side in a second direction (Y-axis direction) that intersects the first direction (X-axis direction). The corner where the long side in the first direction (X-axis direction) and the short side in the second direction (Y-axis direction) meet may be formed at a right angle or rounded to have a curvature. The planar shape of the display panel 100 is not limited to a square, and may be formed in other polygonal, circular, or oval shapes.

The display panel 100 may be formed flat, but is not limited thereto. For example, the display panel 100 is formed at left and right ends and may include curved portions with a constant curvature or a changing curvature. In addition, the display panel 100 may be flexibly formed to be bent, curved, bent, folded, or rolled.

The display panel 100 may include a display area DA that displays an image and a non-display area NDA disposed around the display area DA.

The display area DA may occupy most of the area of the display panel 100. The display area DA may be located at the center of the display panel 100. Pixels each including a plurality of light-emitting areas may be disposed in the display area DA to display an image.

The non-display area NDA may be placed adjacent to the display area DA. The non-display area (NDA) may be an area outside the display area (DA). The non-display area NDA may be arranged to surround the display area DA. The non-display area NDA may be an edge area of the display panel 100.

Display pads DP may be disposed in the non-display area NDA to be connected to the circuit boards 300 . Display pads DP may be disposed at one edge of the display panel 100 . For example, the display pads DP may be disposed at the lower edge of the display panel 100.

The display pads DP may be the outermost structures disposed on the outermost side of the display panel 100 . The outermost structure may be a structure disposed closest to the edge of the display panel 100. The outermost structure may be a structure for driving the display panel 100 or a structure for improving the function of the display panel 100.

The display panel 100 may include a first dam (DAM1), a second dam (DAM2), and a crack dam (CRD).

The first dam (DAM1) and the second dam (DAM2) may be structures for preventing the encapsulation organic layer (TFE2 in FIG. 6) of the encapsulation layer (ENC in FIG. 4) from overflowing. The first dam DAM1 may be arranged to surround the display area DA, and the second dam DAM2 may be arranged to surround the first dam DAM1.

The crack dam (CRD) may be a structure to prevent cracks in the inorganic layers of the encapsulation layer (ENC) from propagating during the process of cutting the substrate (SUB) during the manufacturing process of the display device 10. Crack dams (CRDs) may be disposed along the left, top, and right edges of the display panel 100. The crack dam (CRD) may not be disposed at the lower edge of the display panel 100. The crack dam (CRD) may be the outermost structure disposed on the outermost side on the left, upper, and right sides of the display panel 100.

Driver integrated circuits (ICs) 200 may generate data voltages, power voltages, scan timing signals, etc. The driving ICs 200 may output data voltages, power voltages, scan timing signals, etc.

The driver ICs 200 may be disposed between the display pads PD and the display area DA in the non-display area NDA. Each of the driver ICs 200 may be attached to the non-display area (NDA) of the display panel 100 using a chip on glass (COG) method. Alternatively, each of the driver ICs 200 may be attached to the circuit board 300 using a COP (chip on plastic) method.

The circuit boards 300 may be disposed on display pads DP disposed at one edge of the display panel 100 . The circuit boards 300 may be attached to the display pads PD using a conductive adhesive member such as an anisotropic conductive film or an anisotropic conductive adhesive. Because of this, the circuit boards 300 may be electrically connected to signal wires of the display panel 100. The circuit boards 300 may be a flexible printed circuit board or a flexible film such as a chip on film.

FIG. 3 is a cross-sectional view showing an example of a display device taken along line Ⅰ-Ⅰ′ of FIG. 1 . FIG. 4 is a cross-sectional view showing an example of the display device in which the circuit board of FIG. 3 is bent.

Referring to FIGS. 3 and 4 , the display device 10 according to an embodiment may include a display panel 100, a polarizing film (PF), a cover window (CW), and a panel lower cover (PB). . The display panel 100 may include a substrate (SUB), a display layer (DISL), an encapsulation layer (ENC), and a sensor electrode layer (SENL).

The substrate (SUB) may be formed of glass.

A display layer (DISL) may be disposed on the first side of the substrate (SUB). The display layer (DISL) may be a layer that displays an image. The display layer (DISL) may include a thin film transistor layer (TFTL) where thin film transistors are formed and a light emitting element layer (EML) where light emitting elements that emit light are disposed in light emitting areas.

Scan wires, data wires, power wires, etc. for light emitting areas to emit light may be disposed in the display area DA of the display layer DISL. A scan driving circuit unit that outputs scan signals to scan wires and fan-out wires that connect data wires and the driver IC 200 may be disposed in the non-display area (NDA) of the display layer (DISL).

The encapsulation layer (ENC) may be a layer for encapsulating the light emitting device layer (EML) of the display layer (DISL) to prevent oxygen or moisture from penetrating into the light emitting device layer (EML) of the display layer (DISL). The encapsulation layer (ENC) may be disposed on the display layer (DISL). The encapsulation layer (ENC) may be disposed on the top and side surfaces of the display layer (DISL). The encapsulation layer (ENC) may be arranged to cover the display layer (DISL).

A sensor electrode layer (SENL) may be disposed on the display layer (DISL). The sensor electrode layer (SENL) may include sensor electrodes. The sensor electrode layer (SENL) can detect the user's touch using sensor electrodes.

The polarizing film PF may be disposed on the display panel 100 to reduce external light reflection. The polarizing film PF may include a first base member, a linear polarizer, a phase retardation film such as a λ/4 plate (quarter-wave plate), and a second base member. The first base member, phase retardation film, linear polarizer, and second base member of the polarizing film PF may be sequentially stacked on the display panel 100 . However, it is not limited to this. The polarizing film PF may be eliminated from the display device 10, and the display device 10 may include an anti-reflection structure including a color filter, a low-reflection layer, etc.

The cover window (CW) may be disposed on the polarizing film (PF). The cover window (CW) may be attached to the polarizing film (PF) by a transparent adhesive member such as an optically clear adhesive (OCA) film.

The panel lower cover PB may be disposed on the second side of the substrate SUB of the display panel 100. The second side of the substrate SUB may be opposite to the first side. The panel lower cover PB may be attached to the second side of the substrate SUB of the display panel 100 through an adhesive member. The adhesive member may be a pressure sensitive adhesive (PSA).

The panel lower cover (PB) includes at least one of a light blocking member for absorbing light incident from the outside, a buffer member for absorbing shock from the outside, and a heat dissipation member for efficiently dissipating heat of the display panel 100. It can be included.

The light blocking member may be disposed below the display panel 100. The light blocking member blocks the transmission of light and prevents components disposed below the light blocking member, such as the display circuit board 300, from being visible from the top of the display panel 100. The light blocking member may include a light absorbing material such as black pigment or black dye.

The buffer member may be disposed below the light blocking member. The buffer member absorbs external shock and prevents the display panel 100 from being damaged. The cushioning member may be made of a single layer or multiple layers. For example, the cushioning member is made of polymer resin such as polyurethane, polycarbonate, polypropylene, or polyethylene, or is foam-molded from rubber, urethane-based material, or acrylic-based material. It may be made of an elastic material such as a sponge.

The heat dissipation member may be disposed below the buffer member. The heat dissipation member may include a first heat dissipation layer containing graphite, carbon nanotubes, etc., and a second heat dissipation layer formed of a metal thin film such as copper, nickel, ferrite, or silver, which can shield electromagnetic waves and has excellent thermal conductivity.

The circuit board 300 may be bent toward the lower part of the display panel 100 as shown in FIG. 4 . The circuit board 300 may be attached to the lower surface of the panel lower cover (PB) using an adhesive member 310. The adhesive member 310 may be a pressure sensitive adhesive.

Figure 5 is a cross-sectional view showing an example of a display area of a display panel according to an embodiment.

Referring to FIG. 5 , the display panel 100 according to one embodiment may be an organic light emitting display panel including a light emitting element (LEL) including an organic light emitting layer 172.

The display layer (DISL) may include a thin film transistor layer (TFTL) including a plurality of thin film transistors and a light emitting device layer (EML) including a plurality of light emitting devices.

The first buffer film BF1 may be disposed on the substrate SUB. The first buffer film BF1 may be formed of an inorganic material such as a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. Alternatively, the first buffer layer BF1 may be formed as a multilayer in which a plurality of layers of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked.

The active layer including the channel region (TCH), source region (TS), and drain region (TD) of the thin film transistor (TFT) may be disposed on the first buffer film (BF1). The active layer may be formed of polycrystalline silicon, single crystalline silicon, low-temperature polycrystalline silicon, amorphous silicon, or oxide semiconductor material. When the active layer includes polycrystalline silicon or an oxide semiconductor material, the source region TS and drain region TD in the active layer may be conductive regions doped with ions or impurities and have conductivity.

The gate insulating layer 130 may be disposed on the active layer of a thin film transistor (TFT). The gate insulating layer 130 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

A first gate metal layer including the gate electrode TG of the thin film transistor TFT, the first capacitor electrode CAE1 of the capacitor Cst, and scan lines may be disposed on the gate insulating layer 130 . The gate electrode (TG) of the thin film transistor (TFT) may overlap the channel region (TCH) in the third direction (Z-axis direction). The first gate metal layer is made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It can be formed as a single layer or multiple layers made of alloy.

The first interlayer insulating film 141 may be disposed on the first gate metal layer. The first interlayer insulating layer 141 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The first interlayer insulating layer 141 may include a plurality of inorganic layers.

A second gate metal layer including the second capacitor electrode CAE2 of the capacitor Cst may be disposed on the first interlayer insulating film 141 . The second capacitor electrode CAE2 may overlap the first capacitor electrode CAE1 in the third direction (Z-axis direction). Therefore, the capacitor Cst may be formed by the first capacitor electrode CAE1, the second capacitor electrode CAE2, and an inorganic insulating dielectric film disposed between them and serving as a dielectric film. The second gate metal layer is made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It can be formed as a single layer or multiple layers made of alloy.

The second interlayer insulating film 142 may be disposed on the second gate metal layer. The second interlayer insulating layer 142 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The second interlayer insulating layer 142 may include a plurality of inorganic layers.

A first data metal layer including the first connection electrode CE1 and data lines may be disposed on the second interlayer insulating layer 142 . The first connection electrode CE1 may be connected to the drain region TD through the first contact hole CT1 penetrating the gate insulating film 130, the first interlayer insulating film 141, and the second interlayer insulating film 142. there is. The first data metal layer is any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It can be formed as a single layer or multiple layers made of alloy.

The first organic layer 160 to smooth out the steps caused by the thin film transistors (TFTs) may be disposed on the first connection electrode (CE1). The first organic layer 160 is formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. It can be.

The second data metal layer including the second connection electrode CE2 may be disposed on the first organic layer 160 . The second data metal layer may be connected to the first connection electrode CE1 through the second contact hole CT2 penetrating the first organic layer 160. The second data metal layer is any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It can be formed as a single layer or multiple layers made of alloy.

The second organic layer 180 may be disposed on the second connection electrode CE2. The second organic layer 180 is formed of an organic layer such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. It can be.

Meanwhile, the second data metal layer including the second connection electrode CE2 and the second organic layer 180 may be omitted.

A light emitting element layer (EML) is disposed on the thin film transistor layer (TFTL). The light emitting element layer (EML) may include light emitting elements (LEL) and a bank 190.

Each of the light emitting elements (LEL) may include a pixel electrode 171, a light emitting layer 172, and a common electrode 173. In each of the light-emitting areas EA, a pixel electrode 171, a light-emitting layer 172, and a common electrode 173 are sequentially stacked so that holes from the pixel electrode 171 and electrons from the common electrode 173 are transmitted to the light-emitting layer ( 172) shows areas that are combined with each other and emit light. In this case, the pixel electrode 171 may be an anode electrode, and the common electrode 173 may be a cathode electrode.

A pixel electrode layer including the pixel electrode 171 may be formed on the second organic layer 180. The pixel electrode 171 may be connected to the second connection electrode CE2 through the third contact hole CT3 penetrating the second organic layer 180. The pixel electrode layer is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof. It can be formed as a single layer or multiple layers.

In a top emission structure that emits light in the direction of the common electrode 173 based on the light emitting layer 172, the pixel electrode 171 is made of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al). It can be formed as a single layer, or to increase reflectance, a laminated structure of aluminum and titanium (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO ( It can be formed as ITO/APC/ITO). APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank 190 serves to define the emission areas (EA) of the pixels. To this end, the bank 190 may be formed to expose a partial area of the pixel electrode 171 on the second organic layer 180. The bank 190 may cover the edge of the pixel electrode 171. Bank 190 may be disposed in the third contact hole CT3. That is, the third contact hole CT3 may be filled by the bank 190. The bank 190 may be formed of an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. .

A spacer 191 may be disposed on the bank 190. The spacer 191 may serve to support the mask during the process of manufacturing the light emitting layer 172. The spacer 191 may be formed of an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. .

A light emitting layer 172 is formed on the pixel electrode 171. The light emitting layer 172 may contain an organic material and emit light of a predetermined color. For example, the light emitting layer 172 may include a hole transporting layer, an organic material layer, and an electron transporting layer. The organic material layer may include a host and a dopant. The organic material layer may include a material that emits a certain amount of light, and may be formed using a phosphorescent material or a fluorescent material.

The common electrode 173 is formed on the light emitting layer 172. The common electrode 173 may be formed to cover the light emitting layer 172. The common electrode 173 may be a common layer commonly formed in the light emitting areas EA1, EA2, EA3, and EA4. A capping layer may be formed on the common electrode 173.

In the upper light-emitting structure, the common electrode 173 is made of a transparent conductive material (TCO, Transparent Conductive Material) such as ITO or IZO that can transmit light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver. It can be formed of a semi-transmissive conductive material such as an alloy of (Ag). When the common electrode 173 is formed of a translucent metal material, light output efficiency can be increased due to a micro cavity.

The encapsulation layer (ENC) may be formed on the light emitting device layer (EML). The encapsulation layer (ENC) may include at least one inorganic layer (TFE1, TFE2) to prevent oxygen or moisture from penetrating into the light emitting device layer (EML). Additionally, the encapsulation layer (ENC) may include at least one organic layer to protect the light emitting device layer (EML) from foreign substances such as dust. For example, the encapsulation layer ENC may include a first inorganic encapsulation layer TFE1, an organic encapsulation layer TFE2, and a second inorganic encapsulation layer TFE3.

The first encapsulation inorganic layer (TFE1) is disposed on the common electrode 173, the encapsulation organic layer (TFE2) is disposed on the first encapsulation inorganic layer (TFE1), and the second encapsulation inorganic layer (TFE3) is the encapsulation organic layer (TFE3). It may be placed on a membrane (TFE2). The first encapsulating inorganic film (TFE1) and the second encapsulating inorganic film (TFE3) are alternately stacked with one or more inorganic films selected from the group consisting of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer. It can be formed as a multilayer. The encapsulation organic film (TFE2) may be an organic film such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

The sensor electrode layer (SENL) is disposed on the encapsulation layer (ENC). The sensor electrode layer SENL may include sensor electrodes TE and RE.

The second buffer film BF2 may be disposed on the encapsulation layer ENC. The second buffer layer BF2 may include at least one inorganic layer. For example, the second buffer layer BF2 may be formed as a multilayer in which one or more inorganic layers of a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. there is. The second buffer film BF2 may be omitted.

The first connection parts BE1 may be disposed on the second buffer film BF2. The first connection portions BE1 are formed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al), or a laminated structure of aluminum and titanium (Ti/Al/Ti), aluminum, and ITO. It can be formed of a laminated structure (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO).

The first sensor insulating film TINS1 may be disposed on the first connection parts BE1. The first sensor insulating layer TINS1 may be formed of an inorganic layer, for example, a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

Sensor electrodes, that is, driving electrodes (TE) and sensing electrodes (RE), may be disposed on the first sensor insulating layer TNIS1. Additionally, dummy patterns may be disposed on the first sensor insulating layer TNIS1. The driving electrodes (TE), sensing electrodes (RE), and dummy patterns do not overlap with the light emitting areas (EA). The driving electrodes (TE), sensing electrodes (RE), and dummy patterns are formed of a single layer of molybdenum (Mo), titanium (Ti), copper (Cu), and aluminum (Al), or a laminated structure of aluminum and titanium. (Ti/Al/Ti), a laminated structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a laminated structure of APC alloy and ITO (ITO/APC/ITO).

The second sensor insulating layer TINS2 may be disposed on the driving electrodes TE, the sensing electrodes RE, and the dummy patterns. The second sensor insulating layer TINS2 may include at least one of an inorganic layer and an organic layer. The inorganic layer may be a silicon nitride layer, a silicon oxy nitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic layer may be acryl resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

FIG. 6 is a layout diagram showing an example of area A of FIG. 2 in detail. FIG. 6 is a layout diagram showing a display area DA and a non-display area NDA disposed on the right side of the display panel 100 according to an embodiment.

Referring to FIG. 6 , the display area DA may include a plurality of light-emitting areas EA1, EA2, EA3, and EA4. The plurality of light emitting areas EA1, EA2, EA3, and EA4 include a first light emitting area EA1 emitting light of a first color, a second light emitting area EA2 emitting light of a second color, and a fourth light emitting area EA1 emitting light of a first color. It may include an area EA4 and a third light-emitting area EA3 that emits light of a third color. For example, the first color light is light in a red wavelength band of approximately 600 nm to 750 nm, the second color light is light in a green wavelength band approximately 480 nm to 560 nm, and the third color light is light in a green wavelength band of approximately 480 nm to 560 nm. It may be light in a blue wavelength band of approximately 370 nm to 460 nm, but is not limited thereto.

In FIG. 6 , it is illustrated that the second emission area EA2 and the fourth emission area EA4 emit light of the same color, that is, light of the second color, but the present invention is not limited thereto. The second emission area EA2 and the fourth emission area EA4 may emit light of different colors. For example, the second emission area EA2 may emit light of a second color, and the fourth emission area EA4 may emit light of a fourth color.

In FIG. 6 , each of the first light-emitting areas EA1, the second light-emitting areas EA2, the third light-emitting areas EA3, and the fourth light-emitting areas EA4 is illustrated as having a rectangular planar shape. , but is not limited to this. Each of the first light-emitting areas EA1, the second light-emitting areas EA2, the third light-emitting areas EA3, and the fourth light-emitting areas EA4 has a polygonal, circular, or oval shape other than a square. It can have a shape.

The third light-emitting area EA3 may have the largest area, and the second light-emitting area EA2 and the fourth light-emitting area EA4 may have the smallest areas. The area of the second emission area EA2 and the area of the fourth emission area EA4 may be the same.

The second light-emitting areas EA2 and the fourth light-emitting areas EA4 may be alternately arranged in the first direction (X-axis direction). The second light emitting areas EA2 may be arranged in the second direction (Y-axis direction). The fourth light emitting areas EA4 may be arranged in the second direction (Y-axis direction). While each of the fourth light-emitting areas EA4 has a long side in the first diagonal direction and a short side in the second diagonal direction, each of the second light-emitting areas EA2 has a long side in the second diagonal direction and a short side in the first diagonal direction. It can have short sides. The first diagonal direction refers to a diagonal direction between the first direction (X-axis direction) and the second direction (Y-axis direction), and the second diagonal direction may be a direction perpendicular to the first diagonal direction.

The first emission areas EA1 and the third emission areas EA3 may be alternately arranged in the first direction (X-axis direction). The first light emitting areas EA1 may be arranged in the second direction (Y-axis direction). The third light emitting areas EA3 may be arranged in the second direction (Y-axis direction). Each of the first emission areas EA1 and the third emission areas EA3 may have a square planar shape, but is not limited thereto. In this case, each of the first light-emitting areas EA1 and the third light-emitting areas EA3 may include two sides parallel in the first diagonal direction and two sides parallel in the second diagonal direction.

The non-display area NDA includes a first non-display area NDA1 and a second non-display area NDA2. The first non-display area NDA1 may be an area where structures for driving pixels of the display area DA are arranged. The second non-display area NDA2 may be disposed outside the first non-display area NDA1. The second non-display area NDA2 may be an edge area of the non-display area NDA. Additionally, the second non-display area NDA2 may be an edge area of the display panel 100.

The scan driving circuit unit (SDC), the first power line (VSL), the first dam (DAM1), and the second dam (DAM2) may be disposed in the first non-display area (NDA1).

The scan driving circuit unit (SDC) may include a plurality of stages (STA). The plurality of stages STA may each be connected to scan wires of the display area DA extending in the first direction (X-axis direction). That is, the plurality of stages STA may be connected one-to-one to scan wires of the display area DA extending in the first direction (X-axis direction). A plurality of stages (STAs) may sequentially apply scan signals to a plurality of scan wires.

The first power line (VSL) may be disposed outside the scan driving circuit unit (SDC). That is, the first power line VSL may be disposed closer to the edge EG of the display panel 100 than the scan driving circuit unit SDC. The first power line (VSL) may extend in the second direction (Y-axis direction) from the non-display area (NDA) on the left side of the display panel 100.

The first power line (VSL) may be electrically connected to the common electrode 173, and thus the common electrode 173 may be supplied with the first power voltage to the first power line (VSL).

The first dam DAM1 and the second dam DAM2 are structures for preventing the encapsulation organic layer TFE2 of the encapsulation layer ENC from overflowing to the edge EG of the display panel 100. The first dam DAM1 and the second dam DAM2 may extend from the non-display area NDA on the left side of the display panel 100 in the second direction (Y-axis direction). The second dam (DAM2) may be placed outside the first dam (DAM1). The first dam (DAM1) is disposed closer to the scan driving circuit (SDC) than the second dam (DAM2), and the second dam (DAM2) is located closer to the edge (EG) of the display panel 100 than the first dam (DAM1). It can be placed close to .

In FIG. 6, it is illustrated that the first dam (DAM1) and the second dam (DAM2) are disposed on the first power line (VSL), but the present invention is not limited thereto. For example, one of the first dam DAM1 and the second dam DAM2 may not be disposed on the first power line VSL. Alternatively, neither the first dam DAM1 nor the second dam DAM2 may be disposed on the first power line VSL. In this case, the first dam (DAM1) and the second dam (DAM2) may be disposed outside the first power line (VSL1).

Although FIG. 6 illustrates that the display panel 100 includes two dams DAM1 and DAM2, the display panel 100 is not limited thereto. In some embodiments, the display panel 100 may include three or more dams.

The first power line (VSL) may be a first outer structure disposed in the first non-display area (NDA1). The first outer structure may be disposed further away from the edge EG of the display panel 100 than the outermost structure. That is, the distance from the first power line VSL, which is the first outer structure, to the edge EG of the display panel 100 may be greater than the distance from the outermost structure to the edge EG of the display panel 100.

The distance from the first power line (VSL) on the left or right side of the display panel 100 to the edge (EG) of the display panel 100 is the distance from the first power line (VSL) on the upper side of the display panel 100 to the display panel ( It may be smaller than the distance to the edge (EG) of 100). For example, the distance from the first power line VSL to the edge EG of the display panel 100 on the left or right side of the display panel 100 may be approximately 160 μm or less. Additionally, the distance from the first power line VSL to the edge EG of the display panel 100 at the top of the display panel 100 may be approximately 445 μm or less.

The second dam DAM2 may be a second outer structure disposed in the first non-display area NDA1. The second outer structure may be disposed further away from the edge EG of the display panel 100 than the first outer structure. The distance from the second dam DAM2, which is the second outer structure, to the edge EG of the display panel 100 is the distance from the first power line VSL, which is the first outer structure, to the edge EG of the display panel 100. It can be bigger than the distance.

The distance from the second dam DAM2 on the left or right side of the display panel 100 to the edge EG of the display panel 100 is the distance from the second dam DAM2 on the upper side of the display panel 100 to the display panel 100. It may be smaller than the distance to the edge (EG) of . For example, the distance from the second dam DAM2 on the left side of the display panel 100 to the edge EG of the display panel 100 may be approximately 220 μm or less. Additionally, the distance from the second dam DAM2 to the edge EG of the display panel 100 at the top of the display panel 100 may be approximately 445 μm or less.

The display device 10 according to one embodiment may further include a crack dam (CRD) disposed at the outermost portion of the display panel 100. The crack dam (CRD) may be a structure to prevent cracks from occurring during the process of cutting the substrate (SUB) during the manufacturing process of the display device 10. The crack dam (CRD) may be the outermost structure disposed on the outermost side of the display panel 100. The crack dam CRD may be arranged to surround the second dam DAM2 at the outermost portion of the display panel 100. For example, the crack dam CRD may extend from the non-display area NDA on the left side of the display panel 100 in the second direction (Y-axis direction). The crack dam (CRD) is disposed closer to the edge (EG) than the second dam (DAM2) in the second non-display area (NDA2) and may be disposed between the second dam (DAM2) and the edge area (EGA). .

The display device 10 according to one embodiment may further include a crack dam (CRD) disposed on the outer portion of the display panel 100. The crack dam (CRD) may be a structure to prevent cracks from occurring during the process of cutting the substrate (SUB) during the manufacturing process of the display device 10. The crack dam (CRD) may be the outermost structure disposed on the outermost side of the display panel 100. The crack dam CRD may be arranged to surround the second dam DAM2 at the outermost portion of the display panel 100. For example, the crack dam CRD may extend from the non-display area NDA on the left side of the display panel 100 in the second direction (Y-axis direction). The crack dam (CRD) is disposed closer to the edge (EG) than the second dam (DAM2) in the second non-display area (NDA2) and may be disposed between the second dam (DAM2) and the edge area (EGA). .

The second non-display area NDA2 may include an edge area EGA. The edge area EGA may be arranged along the edge EG of the display panel 100. The edge area (EGA) may be an area where processing traces are left during the process of cutting the substrate (SUB).

FIG. 7 is a layout diagram showing an example of area B in FIG. 2 in detail. FIG. 7 is a layout diagram showing a non-display area (NDA) disposed on the lower side of the display panel 100 according to an embodiment.

Referring to FIG. 7 , the first non-display area NDA1 includes a plurality of display pads PD, a plurality of first driving pads DPD1, a plurality of second driving pads DPD2, and a plurality of pad wires. (PDLs), a plurality of fan out wires, a first dam (DAM1), and a second dam (DAM2) may be disposed.

The plurality of display pads PD may be electrically connected to the circuit board 300 through a conductive adhesive member such as an anisotropic conductive film or an anisotropic conductive adhesive. Each of the plurality of display pads PD may be connected to a pad wire PDL. The pad wire PDL may connect the display pad PD and the first driving pad DPD1.

The plurality of first driving pads DPD1 and the plurality of second driving pads DPD2 may be electrically connected to the driving IC 200 through a conductive adhesive member such as an anisotropic conductive film or an anisotropic conductive adhesive. The plurality of first driving pads DPD1 may be input pads for the driving IC 200 to receive signals from the circuit board 300 (eg, digital video data, data timing control signals, etc.). The plurality of second driving pads DPD2 may be output pads for outputting signals (eg, data voltages) of the driving IC 200. Each of the plurality of second driving pads DPD2 may be connected to the fan-out wire FL. The fan out wire FL may connect the second driving pad DPD2 and the data wire of the display area DA.

Each of the plurality of first driving pads DPD1 may be disposed closer to the display area DA in the second direction (Y-axis direction) than the display pad PD connected thereto. That is, among the display pad PD and the first driving pad DPD1 connected to each other, the display pad PD is positioned at the edge of the display panel 100 in the second direction (Y-axis direction) longer than the first driving pad DPD1. EG) can be placed close to it.

Each of the plurality of second driving pads DPD2 is disposed closer to the display area DA in the second direction (Y-axis direction) than any one of the plurality of first driving pads DPD1. It can be. That is, the first driving pad DPD1 is closer to the edge EG of the display panel 100 in the second direction (Y-axis direction) than any one of the plurality of second driving pads DPD. It can be placed close to .

The first dam (DAM1) and the second dam (DAM2) may intersect the fan out wiring (FL). The first dam DAM1 and the second dam DAM2 may extend from the non-display area NDA on the lower side of the display panel 100 in the first direction (X-axis direction). The second dam (DAM2) may be placed outside the first dam (DAM1). The first dam DAM1 is disposed closer to the display area DA than the second dam DAM2, and the second dam DAM2 is located closer to the edge EG of the display panel 100 than the first dam DAM1. Can be placed close together.

FIG. 8 is a cross-sectional view showing an example of a display panel taken along line II-II' of FIG. 6. FIG. 9 is a cross-sectional view showing an example of a display panel taken along line III-III' of FIG. 7.

8 and 9 briefly show a cross-section of the display panel 100 when the substrate (SUB) of the display panel 100 is cut by spraying an etchant after irradiating a laser during the manufacturing process of the display panel 100. there is.

Referring to FIGS. 8 and 9, when the edge area (EGA) cuts the substrate (SUB) by spraying an etchant after irradiating a laser, processing traces are left on the upper surface (UP) of the substrate (SUB) by the irradiated laser. It may be a formed area. In one embodiment, the edge area (EGA) may be within about 50㎛. The display panel 100 may have an edge area (EGA) with a trace left by laser processing with a width of about 50 μm or less along the edge (EG).

The substrate (SUB) of the display panel 100 is connected to the upper surface (US) on which the light emitting element layer (EML) is disposed, the lower surface (BS) opposite to the upper surface (US), the upper surface (US), and the lower surface (BS). It may include curved sides (SS1, SS2). The substrate (SUB) of the display panel 100 includes an edge (EG), which is the outermost protruding portion of the curved side surfaces (SS1, SS2), and the side surfaces (SS1, SS2) have an edge (EG) and a top surface (US). ) may include a first side (SS1) between the edges (EG) and a second side (SS2) between the edge (EG) and the bottom (BS).

The substrate SUB may be cut from the mother substrate ('MSUB' in FIG. 16) through a laser irradiation and etching process in the manufacturing process of the display device 10. Here, the shape of the side surfaces SS1 and SS2 of the substrate SUB of the display panel 100 can be controlled by designing the position of the laser spot ('SPOT' in FIG. 22) irradiated to the mother substrate MSUB. According to one embodiment, the display device 10 has a curved shape in three-dimensional space at a location where the laser spot (SPOT) is irradiated during the process of cutting the substrate (SUB) from the mother substrate (MSUB) during the manufacturing process. The side surfaces SS1 and SS2 of the cut substrate SUB may also have a curved shape.

However, in the cutting process of the substrate (SUB), the laser and etching processes may be performed from one side of the mother substrate (MSUB). The sides (SS1, SS2) of the cut substrate (SUB) may include a side adjacent to one side on which the laser and etching process is performed, and a side adjacent to the other side on which the laser and etching process is not performed as the side opposite to the one side. You can. In an exemplary embodiment, in the manufacturing process of the display device 10, a laser may be irradiated and an etching process may be performed on the bottom BS of the substrate SUB, and the side surfaces SS1 and SS2 of the substrate SUB may be It may include a first side (SS1) adjacent to (US) and a second side (SS2) adjacent to the lower surface (BS). The first side SS1 and the second side SS2 may have different degrees of exposure to the laser and etching process during the cutting process of the substrate SUB, and each may have a curvature but a different shape.

FIG. 10 is a cross-sectional view showing the edge shape of the substrate shown in FIGS. 8 and 9 in more detail. FIG. 11 is a micrograph showing an edge of a substrate of a display panel according to one embodiment.

Referring to FIGS. 10 and 11 in addition to FIGS. 8 and 9 , the substrate SUB of the display panel 100 includes an outermost edge EG, and a second portion between the edge EG and the top surface US. It may include a first side (SS1) and a second side (SS2) between the edge (EG) and the bottom surface (BS). The first side (SS1) and the second side (SS2) each have a curvature and may be formed to be curved from the ends of the upper (US) and lower (BS) surfaces to the edge (EG). The curvature of the first side SS1 and the second side SS2 may vary depending on the design, such as the location and spacing of the spot irradiated in the laser process. In an exemplary embodiment, the edge EG of the substrate SUB of the display panel 100 may not be located at the center in the thickness direction and may be closer to the upper surface US than the lower surface BS. Accordingly, the lengths of the first side (SS1) and the second side (SS2) may be different from each other. For example, the length of the first side SS1 may be shorter than the length of the second side SS2, and the curvature of the first side SS1 may be greater than the curvature of the second side SS2. That is, the second side (SS2) may have a gentler curvature than the first side (SS1).

In an exemplary embodiment, the substrate SUB of the display panel 100 has a curvature of the second side surface SS2 having a gentle curvature of about 200 ㎛R to 300 ㎛R, or 220 ㎛R to 260 ㎛R, or It may have a range of around 240㎛R. The width W1 of the second side surface SS2 protruding from the end of the bottom surface BS to the edge EG may range from 10% to 20% of the total thickness of the substrate SUB. In an embodiment in which the total thickness of the substrate SUB is 200㎛, the width W1 of the second side surface SS2 protruding from the end of the lower surface BS to the edge EG is 20㎛ to 40㎛, or 30㎛. It can have internal and external sizes. In some embodiments, the width W1 may be 27.01 μm. The second side (SS2) of the substrate (SUB) adjacent to the bottom (BS) where the display cell (DPC) is not disposed may have a gentle curvature compared to the first side (SS1), and may be more resistant to external shock. It can be strengthened.

The substrate SUB of the display panel 100 may have weak resistance to external shock if the side surfaces SS1 and SS2 are not parallel to the upper surface US and the lower surface BS but have a vertical or inclined shape. . To prevent this, the display device 10 may have a substrate SUB of the display panel 100 having side surfaces SS1 and SS2 having relatively gentle curvatures from the upper surface US and the lower surface BS, Can be resistant to external shocks. As described above, the shapes of the side surfaces SS1 and SS2 may vary depending on the conditions of the laser irradiation process and the etching process performed in the separation process of the substrate SUB during the manufacturing process of the display device 10. A more detailed explanation of this will be provided later along with the manufacturing process.

According to one embodiment, the vertical distance (H1) between the bottom surface (BS) of the substrate (SUB) and the side parallel to the edge (EG) compared to the total thickness of the substrate (SUB) is about 50% to 60%. You can have it. For example, when the total thickness of the substrate SUB is 200㎛, the vertical distance H1 between the bottom surface BS of the substrate SUB and the side parallel to the edge EG is 100㎛ to 120㎛, or It may have a size of around 110㎛. For example, the vertical distance H1 may be 109.2㎛. The position of the edge EG may vary depending on the spot design of the laser irradiated in the cutting process of the substrate SUB and the process conditions of the etching process performed after the laser process.

Meanwhile, in the cutting process of the substrate SUB, the etching process performed after the laser process may be performed on the lower surface BS of the substrate SUB. During the etching process, the substrate (SUB) can be cut from the mother substrate (MSUB) along the laser irradiated area, and the surface shape of the side surfaces (SS1, SS2) of the substrate (SUB) is changed according to the etching direction of the mother substrate (MSUB). It may vary.

FIG. 12 is a micrograph showing a cut surface of an edge of a display panel substrate according to an exemplary embodiment. Figure 12 is a micrograph of the cut surface of the substrate SUB, viewed from the side surfaces SS1 and SS2.

Referring to FIG. 12, in the display device 10 according to an embodiment, the substrate (SUB) of the display panel 100 may be a glass substrate, and the top (US) and bottom (BS) surfaces are formed on the side surfaces (SS1 and SS2). The surface shape of adjacent parts may be different. The etching process performed in the cutting process of the glass substrate can cut the substrate (SUB) from the mother substrate (MSUB) along the laser irradiated area and form glass pores on the surface of the glass substrate. . Glass pores may become smaller depending on the direction of the etching process performed after laser irradiation.

The etching process of cutting the substrate SUB from the mother substrate MSUB may be performed in the direction from the bottom surface BS of the substrate SUB to the top surface US, and may be performed on the sides SS1 and SS2 of the substrate SUB. , the size of the glass voids formed on the surface may be larger in the portion adjacent to the lower surface (BS) than in the portion adjacent to the upper surface (US). For example, the average size of the glass voids formed on the surface of the second side (SS2) adjacent to the lower surface (BS) of the side surfaces (SS1, SS2) of the substrate (SUB) is the first side (SS1) adjacent to the upper surface (US). ) may be larger than the average size of glass pores formed on the surface.

The size of the glass gap in the portion in contact with the end of the lower surface BS of the second side surface SS2 may be larger than the size of the glass void in the portion in contact with the edge EG. Additionally, the size of the glass voids in the portion in contact with the edge EG of the first side surface SS1 may be larger than the size of the glass voids in the portion in contact with the upper surface US. In the surface shape of the side surfaces (SS1, SS2), the size of the glass void may increase in size from the lower surface (BS) to the upper surface (US). In an exemplary embodiment, the average size of the glass pores on the first side (SS1) may range from 5 μm to 30 μm, and the average size of the glass pores on the second side (SS2) may range from 30 μm to 50 μm. It can have a range. In the micrograph of FIG. 12, the shape is closer to the second side (SS2) adjacent to the lower surface (BS) of the substrate (SUB) as it moves upward, and the shape of the first side (SS2) adjacent to the upper surface (US) of the substrate (SUB) as it moves downward. It may have a shape close to SS1). The substrate SUB of the display panel 100 may have a curvature shape of the side surfaces SS1 and SS2 and the size of glass voids formed on the surface as traces of the manufacturing process.

However, it is not limited to this. In some embodiments, the cutting process of the substrate SUB during the manufacturing process of the display device 10 may include an etching process performed on each of the top surface US and the bottom surface BS, and in this case, the first side surface SS1 and The length and curvature of the second side surface SS2, the size of the glass void formed on the surface, etc. may be different from those described above.

The crack dam (CRD) may be a structure to prevent cracks from occurring during the process of cutting the substrate (SUB) during the manufacturing process of the display device 10. The crack dam (CRD) may be the outermost structure disposed on the outermost side of the left side of the display panel 100. The distance between the crack dam (CRD) and the edge area (EGA) may be approximately 30 μm or less. The distance between the crack dam (CRD) and the edge area (EGA) may be 0 μm.

In an exemplary embodiment, the distance from the edge EG of the display panel 100 to the encapsulation layer ENC may be about 300 μm or less. When the substrate SUB is cut by spraying an etchant after laser irradiation, the distance from the edge EG of the display panel 100 to the encapsulation layer ENC may vary depending on the one-side tolerance of the laser. For example, when the laser's one-side tolerance is 50㎛, the distance from the edge EG of the display panel 100 to the encapsulation layer ENC may be 200㎛ or less. However, it is not limited to this. The distance from the edge EG of the display panel 100 to the encapsulation layer ENC may be 0 μm.

According to one embodiment, the display panel 100 has a distance (D1) between the crack dam (CRD) and the edge (EG) of 130 ㎛ or less, and the distance between the crack dam (CRD) and the edge area (EGA) is approximately 80 ㎛. It may be ㎛ or less. The minimum distance from the crack dam (CRD), which is the outermost structure, to the edge (EG) of the display panel 100 will vary depending on the width of the edge area (EGA) and the minimum distance from the crack dam (CRD) to the edge area (EGA). You can.

When the substrate (SUB) is cut by spraying an etchant after laser irradiation, the minimum distance between the crack dam (CRD) and the edge (EG) of the display panel 100 may vary depending on the one-sided tolerance of the laser. In this case, the minimum distance D1 from the crack dam (CRD), which is the outermost structure, to the edge EG of the display panel 100 is the width of the edge area EGA, and the width of the edge area EGA from the crack dam CRD is the width of the edge area EGA. It may be the sum of the minimum distance to and the one-side tolerance of the laser. For example, if the minimum distance between the crack dam (CRD) and the edge area (EGA) is designed to be approximately 30㎛ or less, the minimum distance between the crack dam (CRD) and the edge area (EGA) is 50㎛ due to the laser's one-sided tolerance of 50㎛. The distance may be up to 80㎛ or less. However, the minimum distance between the crack dam (CRD) and the edge area (EGA) may be 0㎛.

Similarly, if the minimum distance between the crack dam (CRD) and the edge area (EGA) is designed to be approximately 30㎛ or less, and the width of the edge area (EGA) is designed to be approximately 50㎛, the laser's one-sided tolerance of 50㎛ Therefore, the minimum distance (D1) between the crack dam (CRD) and the edge (EG) may be up to 130㎛ or less. An explanation of the distance D1 from the edge EG of the display panel 100 to the crack dam CRD due to the one-sided tolerance of the laser will be described later in connection with the manufacturing process of the display device 10.

The display pad PD may be the outermost structure disposed on the outermost side of the lower side of the display panel 100 . Even on the lower side of the display panel 100, the distance D2 between the edge EG of the display panel 100 and the encapsulation layer ENC may be about 300 μm or less. However, since the display pads PD are disposed on the lower side of the display panel 100, the distance D1 between the edges EG and the encapsulation layer ENC on the left and right sides and the top of the display panel 100 is the display panel ( 100) may be smaller than the distance D2 between the edge EG and the encapsulation layer ENC. Additionally, in an exemplary embodiment, the minimum distance between the display pad PD and the edge EG may be approximately 80 μm or less.

The minimum distance from the display pad PD to the edge EG of the substrate SUB may be the sum of the width of the edge area EGA and the minimum distance from the display pad PD to the edge area EGA. When the substrate SUB is cut by spraying an etchant after laser irradiation, the minimum distance from the display pad PD to the edge EG of the substrate SUB may vary depending on the one-side tolerance of the laser. For example, if the minimum distance between the display pad (PD) and the edge (EG) is designed to be approximately 80㎛, the minimum distance between the display pad (PD) and the edge (EG) is 130㎛ due to the laser's lateral tolerance of 50㎛. It may be below.

During the manufacturing process, the display panel 100 can be irradiated with a laser and then sprayed with an etchant to cut the substrate (SUB) of the display panel 100, and the first side (SS1) and the second side (SS1) of the display panel 100. SS2) can be etched by an etchant. The roughness of the first side SS1 and the second side SS2 of the display panel 100 may be about 0.5 μm or less. When the substrate (SUB) of the display panel 100 is cut by irradiating a laser and then spraying an etchant, the roughness of the first side (SS1) and the second side (SS2) of the display panel 100 is reduced by cutting the substrate (SUB) using a cutting member. ) may be relatively smaller than when performing a polishing process after cutting.

As described above, in the cutting process of the substrate SUB, the etching process is performed from the bottom BS of the substrate SUB, so the first side SS1 and the second side SS2 of the display panel 100 are exposed to the etchant. The degree of exposure may vary. Accordingly, the roughness of the first side SS1 and the roughness of the second side SS2 of the display panel 100 may be different. For example, the roughness of the first side SS1 and the second side SS2 of the display panel 100 may differ by approximately 1% to 20%.

FIG. 13 is a cross-sectional view showing area C of FIG. 8 in more detail. FIG. 13 shows the stacked structure on the right side of the display panel 100 in more detail.

Referring to FIG. 13 , the first power line VSL may include the same material as the first data metal layer including the first connection electrode CE1 and the data lines, and may be disposed on the same layer. The first power line (VSL) may be disposed on the second interlayer insulating film 142. The first power wiring (VSL) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

The first dam (DAM) and the second dam (DAM2) may be disposed on the first power line (VSL). The first dam (DAM1) includes a first sub-dam (SDAM1) and a second sub-dam (SDAM2), and the second dam (DAM2) includes the first sub-dam (SDAM1), the second sub-dam (SDAM2), and It may include a third sub dam (SDAM3). The first sub-dam SDAM1 may include the same material as the first organic layer 160 and may be disposed on the same layer. The second sub dam SDAM2 may include the same material as the second organic layer 180 and may be disposed on the same layer. The third sub dam SDAM3 may include the same material as the bank 190 and may be disposed on the same layer.

The height of the first dam (DAM1) may be lower than the height of the second dam (DAM2), but the embodiments of the present specification are not limited thereto. The height of the first dam (DAM1) may be substantially the same as the height of the second dam (DAM2) or may be higher than the height of the second dam (DAM2).

The common electrode 173 may be connected to the first power line VSL that is not covered by the first organic layer 160, the second organic layer 180, and the first dam DAM1. Because of this, the common electrode 173 can receive the first power voltage of the first power line (VSL).

The first encapsulation inorganic film TFE1 may cover the first dam DAM1, the second dam DAM2, and the crack dam CRD in the non-display area NDA on the left side of the display panel 100. The first encapsulation inorganic layer TFE1 may extend from the non-display area NDA on the lower side of the display panel 100 to the edge EG of the display panel 100 .

The encapsulation organic layer TFE2 may be arranged to cover the top surface of the first dam DAM1 and not cover the top surface of the second dam DAM2. However, it is not limited to this. The encapsulation organic layer TFE2 may not cover both the top surface of the first dam DAM1 and the top surface of the second dam DAM2. The encapsulation organic layer TFE2 may not overflow to the edge EG of the display panel 100 due to the first dam DAM1 and the second dam DAM2.

The second encapsulation inorganic film TFE3 may cover the first dam DAM1, the second dam DAM2, and the crack dam CRD in the non-display area NDA on the left side of the display panel 100. The second encapsulation inorganic layer TFE3 may extend from the non-display area NDA on the left side of the display panel 100 to the edge EG of the display panel 100 .

An inorganic encapsulation area in which the first inorganic encapsulation layer TFE1 and the second inorganic encapsulation layer TFE3 are in contact with each other may be formed from the second dam DAM2 to the edge EG of the display panel 100 . The weapon encapsulation area may be arranged to surround the second dam (DAM2). The display panel 100 includes an encapsulation layer (ENC) extending to the edge (EG) and a crack dam (CRD) disposed on the outer portion, and an inorganic film is directly disposed on the substrate (SUB) in the display panel 100. Reliability can be secured in the area. The display panel 100 of the display device 10 may have a first inorganic encapsulation layer (TFE1) and a second inorganic encapsulation layer (TFE3) of the encapsulation layer (ENC) extending to the edge EG of the display panel 100. and the edge area (EGA) may overlap with the encapsulation layer (ENC).

The crack dam (CRD) may include the same material as the first organic layer 160, but may be disposed on the buffer layer (BF). However, the present invention is not limited thereto, and the crack dam (CRD) may be disposed on the second interlayer insulating layer 142 in the same way as the first organic layer 160 . Crack dams (CRDs) can be formed of organic films such as acryl resin, epoxy resin, phenolic resin, polyamide resin, and polyimide resin. there is. In an exemplary embodiment, the width of the crack dam (CRD) may be approximately 30 μm or less.

Although FIG. 13 illustrates that the crack dam (CRD) includes one organic film layer, the present invention is not limited thereto. For example, the crack dam (CRD) may further include another organic layer containing the same material as the second organic layer 180. Alternatively, the crack dam (CRD) may further include another organic film layer containing the same material as the bank 190. Alternatively, the crack dam (CRD) may further include another organic film layer containing the same material as the spacer 191.

In addition, Figure 13 illustrates the scan thin film transistor (STFT) of the scan driving circuit unit (SDC). Since the scan thin film transistor (STFT) is substantially the same as the thin film transistor (TFT) described with reference to FIG. 6, description of the scan thin film transistor (STFT) will be omitted.

FIG. 14 is a cross-sectional view showing area D of FIG. 9 in more detail. FIG. 14 shows the stacked structure on the lower side of the display panel 100 in more detail.

Referring to FIG. 14, the display pad PD, the first driving pad DPD1, and the second driving pad DPD2 each have a first sub pad SPD1, a second sub pad SPD2, and a third sub pad SPD1. It may include a pad (SPD3).

The first subpad SPD1 includes the same material as the gate electrode TG, the first capacitor electrode CAE1 of the capacitor Cst, and the first gate metal layer including the scan lines, and is disposed on the same layer. You can. The first sub pad SPD1 may be disposed on the gate insulating layer 130 . The first sub pad (SPD1) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

The second sub pad SPD2 may include the same material as the second gate metal layer including the second capacitor electrode CAE2 and may be disposed on the same layer. The second sub pad SPD2 may be disposed on the first interlayer insulating layer 141 . The second sub pad (SPD2) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

The third sub pad SPD3 may include the same material as the first data metal layer including the first connection electrode CE1 and the data lines, and may be disposed on the same layer. The third sub pad SPD3 may be disposed on the second interlayer insulating film 142 . The third sub pad (SPD3) is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). Alternatively, it may be formed as a single layer or multiple layers made of alloys thereof.

The third sub pad SPD3 of the display pad PD may be electrically connected to the circuit board 300 through a conductive adhesive member such as an anisotropic conductive film or an anisotropic conductive adhesive. The third sub pad SPD3 of the first driving pad DPD1 may be electrically connected to the input bump of the driving IC 200 through a conductive adhesive member such as an anisotropic conductive film or an anisotropic conductive adhesive. The third sub pad SPD3 of the second driving pad DPD2 may be electrically connected to the output bump of the driving IC 200 through a conductive adhesive member such as an anisotropic conductive film or an anisotropic conductive adhesive. For convenience of explanation, the driver IC 200 and the circuit board 300 are omitted in FIG. 14 .

The first inorganic encapsulation film TFE1 and the second inorganic encapsulation film TFE3 may be arranged to cover the first dam DAM1 and a portion of the second dam DAM2 on the lower side of the display panel 100. . For example, the first inorganic encapsulation film TFE1 and the second inorganic encapsulation film TFE3 may be arranged so as not to cover a portion of the upper surface of the second dam DAM2. Alternatively, the first inorganic encapsulation film TFE1 and the second inorganic encapsulation film TFE3 may be covered, but in this case, the third sub pad SPD3 of the second driving pad DPD2 may not be covered. That is, the first encapsulation inorganic film TFE1 and the second encapsulation inorganic film TFE3 include a display pad PD disposed adjacent to the edge EG of the display panel 100 on the lower side of the display panel 100, It may not extend to the first driving pad (DPD1) and the second driving pad (DPD2).

Hereinafter, a manufacturing process of the display device 10 according to an embodiment will be described with reference to other drawings.

FIG. 15 is a flowchart showing a manufacturing process of a display device according to an embodiment.

Referring to FIG. 15, the manufacturing method of the display device 10 according to one embodiment includes preparing a mother substrate ('MSUB' in FIG. 16) and forming a plurality of display cells ('MSUB' in FIG. 16) on one side of the mother substrate (MSUB). In the step (S100) of forming a 'DPC' of the mother substrate (MSUB), a cutting line ('LS' in FIG. 17) is formed along the periphery of the display cell (DPC) by irradiating a laser from the other side of the mother substrate (MSUB) opposite to the one side. A forming step (S200), and a step (S300) of separating the substrate (SUB) on which the display cell (DPC) is formed by etching the mother substrate (MSUB) along the other surface and the cutting line (LS). .

The display device 10 may be formed through a process of separating a plurality of substrates (SUB) on which one display cell (DPC) is formed from a mother substrate (MSUB) on which a plurality of display cells (DPC) are formed. The process of separating the plurality of substrates (SUB) from the mother substrate (MSUB) may include a process of irradiating a laser and a process of separating the substrates (SUB) by etching the mother substrate (MSUB). The display device 10 is manufactured by performing a laser process, and the substrate SUB can minimize the area of the outer portion where the display cell DPC is not disposed. According to one embodiment, the manufacturing process of the display device 10 is performed by designing the position at which a laser spot ('SPOT' in FIG. 22) is formed in the process of irradiating the laser LR to cut the substrate from the mother substrate MSUB. The side shape of (SUB) can be formed to be curved. Accordingly, the display device 10 may have a substrate SUB of the display panel 100 that is resistant to external shock.

Hereinafter, the manufacturing process of the display device 10 will be described in more detail with further reference to other drawings.

16 to 20 are perspective views sequentially showing the manufacturing process of a display device according to an embodiment. FIGS. 21 and 22 are cross-sectional views showing a laser irradiation process during the manufacturing process of a display device according to an embodiment. 25 to 27 are cross-sectional views showing etching and cutting processes during the manufacturing process of a display device according to an embodiment.

16 to 20 show perspective views of the mother substrate MSUB and a plurality of display cells DPC disposed on the mother substrate MSUB. FIGS. 21, 22, and 25 to 27 show cross-sections of the mother substrate (MSUB) and a plurality of display cells (DPC) cut along line VIII-VIII' in FIGS. 16 to 20.

First, referring to FIGS. 16 and 21, a plurality of display cells (DPC) are formed on the first side of the mother substrate (MSUB), and a plurality of first protective films ( After attaching the PRF1), a plurality of display cells (DPC) are inspected.

A display layer (DISL) of each of the plurality of display cells (DPC) is formed on the first surface of the mother substrate (MSUB). The display layer (DISL) includes a thin film transistor layer (TFTL), a light emitting element layer (EML), an encapsulation layer (ENC), and a sensor electrode layer (SENL). The description of the structure of the display layer (DISL) is the same as described above.

Next, a first protective film layer is attached to cover the plurality of display cells (DPC) and the mother substrate (MSUB) disposed between the plurality of display cells (DPC). Then, by removing a portion of the first protective film layer disposed on the mother substrate MSUB, a plurality of first protective films PRF1 may be respectively disposed on the plurality of display cells DPC. A portion of the first protective film layer is removed, and the remainder may be a plurality of first protective films (PRF1). A plurality of first protective films (PRF1) may be respectively disposed on a plurality of display cells (DPC). The plurality of first protective films (PRF1) may be arranged in one-to-one correspondence to the plurality of display cells (DPC).

Each of the plurality of first protective films PRF1 may be a buffer film to protect the plurality of display cells DPC from external shock. The plurality of first protective films (PRF1) may be made of a transparent material.

Next, a plurality of display cells (DPCs) are inspected using an inspection device. After connecting a probe to a plurality of test pads provided in each of the plurality of display cells (DPC), a lighting test of each of the plurality of display cells (DPC) can be performed.

When performing a lighting test after separating a plurality of display cells (DPC) from the mother substrate (MSUB) through a cutting process, an additional process is required to remove a plurality of inspection pads after completing the lighting test. On the other hand, when performing a lighting test on the mother substrate (MSUB), a plurality of inspection pads are removed when the plurality of display cells (DPC) are separated from the mother substrate (MSUB) through laser irradiation and etching. do. Therefore, when performing a lighting test on the mother substrate (MSUB), there is an advantage that an additional process for removing a plurality of test pads is not required.

Next, as shown in FIGS. 17 and 22, the laser LR is irradiated on the second side facing the first side of the mother substrate MSUB to form a laser spot along the edges of the plurality of display cells DPC. forms.

The cutting line LS can be sketched by irradiating the laser LR to form a plurality of laser spots SPOT along the edges of the plurality of display cells DPC. The cutting line LS may be formed along the edges of the plurality of display cells DPC.

Various lasers can be used as the laser (LR) for sketching the cutting line (LS). According to one embodiment, the laser LR may be an infrared Bessel beam with a wavelength of approximately 1030 nm. The laser (LR) may have a repetition frequency in the range of 10 to 1000 kHz, pulse duration in the range of 300 fs to 10 ps, and pulse energy in the range of 10 μJ to 500 μJ. It can have a range. Here, the pulse energy may have a processing energy of 10 μJ or less per laser spot (SPOT). When the laser LR having the above-described specifications is irradiated to the mother substrate MSUB, the length of the laser spot SPOT in the Z-axis direction may range from 20 μm to 25 μm.

According to one embodiment, the laser LR is irradiated on the second side of the mother substrate MSUB, and the laser LR forms a plurality of laser spots SPOT within the three-dimensional space of the mother substrate MSUB. You can. A plurality of laser spots (SPOTs) may be formed to be spaced apart from each other in the X-axis, Y-axis, and Z-axis directions in three-dimensional space. The laser (LR) may be irradiated to the mother substrate (MSUB) through an optical device such as a diffractive optical element (DOE) or a spatial laser modulator (SLM), and the laser (LR) may be irradiated to the mosquito substrate (MSUB). Multiple laser spots (SPOTs) can be formed simultaneously within the three-dimensional space of the plate (MSUB).

A plurality of laser spots (SPOT) may be formed to have a certain trajectory within the three-dimensional space of the mother substrate (MSUB). Adjacent laser spots (SPOTs) are spaced apart from each other at regular intervals in the X-axis direction, Y-axis direction, and Z-axis direction, and a plurality of consecutive laser spots (SPOTs) may be formed along a certain trajectory. In the etching process performed after the laser (LR) irradiation process, the etchant can penetrate the laser spot (SPOT) and etch the mother substrate (MSUB), and the mother substrate (MSUB) follows the trajectory of the laser spot (SPOT). It can be cut accordingly. That is, the shape of the side surfaces (SS1, SS2) of the substrate (SUB) cut from the mother substrate (MSUB) may vary in response to the trajectory where the laser spot (SPOT) is formed. In the method of manufacturing the display device 10 according to an embodiment, a plurality of laser spots (SPOTs) formed in a process of irradiating a laser (LR) to a mother substrate (MSUB) may have a trajectory with a curvature in three-dimensional space. , the cut substrate (SUB) may have curved sides (SS1, SS2).

In an exemplary embodiment, the laser LR is irradiated along the Y-axis direction, and laser spots (SPOTs) may be designed to draw trajectories that meet specific conditions along the X-axis and Z-axis directions.

FIG. 23 is a graph showing trajectories of laser spots irradiated during the manufacturing process of a display device according to an embodiment. FIG. 24 is a micrograph showing laser spots formed on the mother substrate along the trajectory of the laser spots in FIG. 23. Figure 23 is a graph showing the trajectories of a plurality of laser spots (SPOT) formed by irradiating the laser (LR) to the mother substrate (MSUB) on the X and Z axes.

Referring to FIGS. 23 and 24 , the mother substrate (MSUB) may have a thickness ranging from 400 ㎛ to 600 ㎛. When the thickness of the mother substrate (MSUB) is approximately 500㎛, a plurality of laser spots (SPOT) may be formed in a depth (Z-axis) of the mother substrate (MSUB) ranging from 0㎛ to 500㎛. That is, the processing area of the laser LR in the thickness direction (Z-axis direction) of the mother substrate MSUB may range from about 95% to 100% of the thickness of the mother substrate MSUB. When the thickness of the mother substrate MSUB is approximately 500 μm, the processing area in the thickness direction (Z-axis direction) of the mother substrate MSUB of the laser LR may range from 450 μm to 500 μm. As an example shown in FIG. 23, the processing area in the thickness direction (Z-axis direction) of the mother substrate (MSUB) of the laser (LR) may be 482.25 μm.

In the cross-sectional view, the number of laser spots (SPOTs) formed across the entire thickness of the mother substrate (MSUB) may be 10 to 50. Based on FIG. 23, the number of laser spots (SPOT) spaced apart in the Z-axis direction from the lower surface of the mother substrate (MSUB) to the upper surface may be 10 to 50. In Figure 23, 20 laser spots (SPOTs) are formed, but the present invention is not limited thereto. When the laser (LR) moves in the Y-axis direction and forms laser spots (SPOTs), in a cross section of the mother substrate (MSUB) cut in the X-axis direction, the laser spots (SPOTs) are spaced apart in the can be formed. At this time, the number of laser spots (SPOTs) measured on the cross section of the mother substrate (MSUB) may be 10 to 50.

Depending on the number of laser spots (SPOTs), the first vertical spacing (DSP) spaced apart in the X-axis direction may have a size of about 10㎛, and the second vertical spacing (HSP) spaced apart in the Z-axis direction may have a size of approximately 7㎛. In the embodiment illustrated in Figure 23, the first vertical spacing (DSP) may be 9.8 μm and the second vertical spacing (HSP) may be 7.05 μm. However, it is not limited to this.

A trajectory on the X-Z axis formed by a plurality of laser spots (SPOTs) may have a curvature. Like the shape of the side surfaces (SS1, SS2) of the substrate (SUB) described above with reference to FIG. 8, the position of the curvature outermost spot (SOT) is less than the position of half of the processing area in the Z-axis direction of the mother substrate (MSUB). Can be adjacent on 2 sides. That is, the outermost spot of curvature (SOT) may be located closer to the lower surface than 1/2 of the entire thickness of the mother substrate (MSUB).

In an exemplary embodiment, the outermost point of curvature in the trajectory formed by the plurality of laser spots (SPOT) may be located at a point approximately 30% from the second surface of the mother substrate (MSUB). When the thickness of the mother substrate (MSUB) is approximately 500㎛, the outermost point of curvature of the trajectory formed by the laser spots (SPOT) is from the second side of the mother substrate (MSUB) or the bottom surface (BS) of the substrate (SUB). It may be located at approximately 150㎛. As an example shown in FIG. 23, the outermost point of curvature of the trajectory formed by the laser spots (SPOTs) may be located at 148.8㎛. The curvature of the trajectory formed by the laser spots (SPOTs) may be 500㎛R.

Laser spots (SPOTs) from the curvature outermost spot (SOT) may continue in a trajectory with curvature. Here, the first laser spot (SPOT) formed by irradiation of the laser (LR) is the outermost spot of curvature from the first laser spot (S1) closest to the second surface or lower surface to which the laser (LR) is irradiated. Laser spots (SPOT) up to (SOT) are formed outward from the center of curvature of the trajectory. On the other hand, the last laser spot (SPOT) formed by irradiation of the laser (LR) is the first surface on which the laser (LR) is not irradiated from the curvature outermost spot (SOT), or the nth adjacent to the upper surface. Laser spots (SPOT) up to the laser spot (Sn) may be formed to face the center of curvature.

From the outermost point of curvature, the processing area in the X-axis direction can be defined by the trajectory formed by laser spots (SPOTs). The horizontal spacing between the curvature outermost spot (SOT) and the first laser spot (S1) in the first X-axis processing area (WCH1) may range from 10 μm to 20 μm. The horizontal spacing between the curvature outermost spot (SOT) and the nth laser spot (Sn) in the second X-axis processing region (WCH2) may range from 120 ㎛ to 150 ㎛. Here, the 'horizontal gap' refers to the gap between the X-axis coordinates of the curvature outermost spot (SOT), the first laser spot (S1), and the nth laser spot (Sn). You can. That is, the 'horizontal spacing' is the interval in the It can be. In the embodiment illustrated in FIG. 23, the first X-axis direction processing area (WCH1) may be 16.47 μm, and the second X-axis direction processing area (WCH2) may be 139.61 μm.

As the trajectory formed by the laser spots (SPOTs) has curvature, the trajectory formed by the continuous laser spots (SPOTs) and the first and second surfaces, or the lower surface and the upper surface, of the mother substrate (MSUB) The angle (α, β) between (Upper surface) can be defined. In an exemplary embodiment, among the plurality of laser spots (SPOT), a virtual space connecting the second surface or the lower surface and the first to fourth laser spots (S1, S2, S3, S4) closest to each other is used. The angle of incidence (α) formed between the line and the first or lower surface of the mother substrate (MSUB) may range from 70° to 90°. Among the plurality of laser spots (SPOT), connecting the n-4th to nth laser spots (Sn-3, Sn-2, Sn-1, Sn) closest to the first surface or upper surface. The emission angle (β) formed by the virtual line and the first surface or upper surface of the mother substrate (MSUB) may range from 35° to 40°. In the embodiment illustrated in Figure 23, the incidence angle (α) may be 81.85° and the exit angle (β) may be 39.62°.

As described above, the trajectory of the laser spots (SPOTs) formed by the laser (LR) irradiated to the mother substrate (MSUB) has a curved shape, and the spacing between the laser spots (SPOTs), the processing area, etc. are determined by the mother substrate (MSUB). The side surfaces (SS1, SS2) of the substrate (SUB) cut from the MSUB may be designed to have a curved shape. In the trajectory formed by the laser spots (SPOTs), the sides (SS1, SS2) of the substrate (SUB) are measured according to the position of the curvature outermost spot (SOT), the incident angle (α), the exit angle (β), the size of the processing area, etc. ) can be determined. The trajectory formed by the laser spots (SPOTs) may be modified in various ways, but the method of manufacturing the display device 10 according to one embodiment irradiates the laser (LR) so that a plurality of laser spots (SPOTs) have a curved trajectory. As a result, the side surfaces SS1 and SS2 of the substrate SUB can be formed to be curved, and the substrate SUB of the display panel 100 can be resistant to external shock.

Meanwhile, the tolerance on one side of the laser (LR) may be within approximately 50㎛, and the tolerance on both sides of the laser may be within approximately 100㎛. The one-sided tolerance of the laser LR may be a cutting error in one direction (for example, the X-axis direction) when sketching the cutting line LS by forming laser spots SPOT with the laser LR.

The distance from the encapsulation layer ENC to the edge EG of the display panel 100 may be affected by the one-side tolerance SE2 of the laser LR. When the laser (LR) is irradiated correctly at the location where it should be irradiated, the distance from the encapsulation layer (ENC) to the area where the laser spots (SPOT) are formed is defined as "DCH".

When the laser LR is irradiated to the left by the maximum value of the one-sided tolerance of the laser LR, the distance from the encapsulation layer ENC to the laser spot SPOT may be “DCH-SE2”. In comparison, when the laser LR is irradiated to the right as much as the maximum value of the one-sided tolerance of the laser LR, the distance from the encapsulation layer ENC to the laser spot SPOT may be “DCH+SE2”.

In the next step, the etching process, the substrate (SUB) of the display cell (DPC) is separated from the mother substrate (MSUB) based on the laser spot (SPOT), so the distance from the encapsulation layer (ENC) to the laser spot (SPOT) is shown in Figure 8 It may be similar to the minimum distance from the encapsulation layer ENC to the edge EG of the display panel 100 shown in . The distance from the encapsulation layer (ENC) to the laser spot (SPOT) may be slightly reduced in the subsequent etching process, and the reduced distance may be the minimum distance from the encapsulation layer (ENC) to the edge (EG) of the display panel 100. . In the display panel 100, the minimum distance from the encapsulation layer (ENC) to the edge (EG) of the display panel 100 is, in some cases, equivalent to the “one-sided tolerance × 2” (or “two-sided tolerance”) of the laser (LR). The distance may differ by approximately 100㎛.

In the display panel 100 shown in FIG. 8, the distance D1 from the encapsulation layer ENC to the edge EG of the display panel 100 may be “DCH-SE2” to “DCH+SE2.” For example, when the distance (DCH) from the encapsulation layer (ENC) to the laser spot (SPOT) is 50㎛ and the one-side tolerance of the laser (LR) is 50㎛, in the display panel 100 shown in FIG. 8 The distance from the encapsulation layer (ENC) to the edge (EG) of the display panel 100 may vary within a range of 300 μm or less by approximately 100 μm depending on the one-side tolerance of the laser (LR). The distance to the edge EG of the display panel 100 may be at least 0 μm or at most 300 μm or less.

The one-sided tolerance of the laser LR is 50㎛, which may be smaller than the one-sided tolerance when cutting the substrate SUB using a cutting member. That is, because the one-sided tolerance of the laser (LR) is smaller than the one-sided tolerance of the cutting member, the distance from the encapsulation layer (ENC) to the edge (EG) of the display panel 100 can be reduced when cutting using the laser (LR). there is.

Next, as shown in Figure 18 and Figures 25 to 27, the second protective film (PRF2) is attached on the plurality of first protective films (PRF1) and the second surface of the mother substrate (MSUB) is applied without a separate mask. Etch the mother substrate (MSUB) by spraying etchant on it.

The second protective film PRF2 may be attached to the plurality of first protective films PRF1 and the exposed mother substrate MSUB that is not covered by the plurality of first protective films PRF1. The second protective film PRF2 may cover the area where the laser spot SPOT is formed. The second protective film (PRF2) may be an acid-resistant film to protect the plurality of display cells (DPC) from an etchant during the etching process of the mother substrate (MSUB) to be performed in the next step.

The mother substrate (MSUB) can be etched by spraying an etchant on the second surface without a separate mask. In an etching process using an etchant, the mother substrate (MSUB) may be cut along a plurality of laser spots (SPOT) while the thickness of the mother substrate (MSUB) is reduced. That is, each of the plurality of display cells (DPC) can be separated from the mother substrate (MSUB).

When spraying an etchant on the second surface of the mother substrate MSUB, the mother substrate MSUB may be reduced from the first thickness T1' to the second thickness T2'. Since the mother substrate (MSUB) is etched without a separate mask, isotropic etching can be performed in which all areas of the second surface of the mother substrate (MSUB) are uniformly etched, up to the area where the laser spots (SPOT) are formed.

At this time, the thickness of the mother substrate (MSUB) is reduced by the etchant, and when the etchant penetrates into the plurality of laser spots (SPOT) formed by the laser (LR), the plurality of laser spots (SPOT) cause the laser There may be a difference in etching speed between areas where spots (SPOTs) are formed and areas where laser spots (SPOTs) are not formed.

As a laser spot (SPOT) is formed in the area where the laser (LR) is irradiated, the surface area of the mother substrate (MSUB) may increase compared to the area where the laser (LR) is not irradiated. As the area irradiated with the laser (LR) has a larger surface area than other areas, the area in contact with the etchant increases and the etching speed can be faster. Additionally, in the area where the laser LR is irradiated, the physical properties of the mother substrate MSUB may change. The part of the mother substrate (MSUB) irradiated with the laser (LR) may have a highly reactive bond due to the etchant than other parts, and the etching speed may be faster.

Accordingly, the mother substrate (MSUB) can be anisotropically etched where the etching speed in the area where the laser spots (SPOT) are formed is faster than the etching speed in the area where the laser spot (SPOT) is not formed. Due to this, the side surfaces (SS1, SS2) of the substrate (SUB) separated from the mother substrate (MSUB) have a curved shape similar to the laser spot (SPOT), but may be etched further than the area where the laser spot (SPOT) is formed. there is. In an exemplary embodiment, the curvature of the trajectory of the laser spots (SPOT) formed on the mother substrate (MSUB) during the manufacturing process of the display device 10 and the curvature of the substrate (SUB) in the display panel 100 of the display device 10 The curvatures of the sides (SS1, SS2) may be different. This is because when the mother substrate (MSUB) is etched along the laser spot (SPOT), the curvature of the curved surface changes due to the difference in etching speed.

Additionally, the etching process may be performed on the second side or lower surface of the mother substrate (MSUB), which is the side on which the laser (LR) is irradiated. Accordingly, there is a difference in the etching speed between the part where the laser spot (SPOT) is formed and the part where the laser spot (SPOT) is not formed on the mother substrate (MSUB), but the second side, or lower surface, and the first side of the mother substrate (MSUB) , or there may also be a difference in etch rate between the upper surfaces. The etching speed of the second side of the mother substrate (MSUB) may be faster than that of the first side, and more portions may be etched along the laser spot (SPOT). That is, the substrate (SUB) cut from the mother substrate (MSUB) has a curvature difference due to an etch rate difference between the first side (SS1) adjacent to the upper surface (US) and the second side (SS2) adjacent to the lower surface (BS), and Differences in the size of glass pores on the surface may occur. For example, as the etchant penetrates from the second side, the second side SS2 adjacent to the bottom BS of the substrate SUB, which is the second side of the mother substrate MSUB, becomes the first side of the mother substrate MSUB. The first side surface (SS1) adjacent to the top surface (US) of the substrate (SUB) may have a gentler curvature than that of the first side surface (SS1). Additionally, the size of the glass pores formed on the surface of the second side (SS2) may be smaller than the size of the glass pores formed on the surface of the first side (SS1). The explanation for this is the same as described above.

While the first side of the mother substrate (MSUB) is not penetrated by the etchant due to the second protective film, the second side of the mother substrate (MSUB) is etched by the etchant, so the first side of the mother substrate (MSUB) The second surface may have differences in roughness, hardness, light transmittance, light reflectance, local density, surface chemical structure, etc. For example, dimples may occur due to the second etchant on the mother substrate (MSUB).

After the etching process is completed, the second protective film (PRF2) may be detached.

Next, as shown in FIG. 20, the driver IC 200 and the circuit board 300 are attached to each of the plurality of display cells (DPC), and the first protective film (PRF1) is detached from each of the plurality of display cells (DPC). After that, a polarizing film (PF) and a cover window (CW) are attached, and the display device 10 can be manufactured.

The manufacturing method of the display device 10 according to one embodiment performs a separation process of the mother substrate (MSUB), so compared to the manufacturing method using a cutting member, the display cells (DPC) of the display panel 100 and the display panel ( 100) can be minimized. That is, the display device 10 can minimize unnecessary space remaining in the outermost portion of the display panel 100. In addition, the manufacturing method of the display device 10 not only reduces the thickness of the mother substrate (MSUB) using an etching process, but also allows the substrate (SUB) of each of the plurality of display cells (DPC) to be separated from the mother substrate (MSUB). ) can be separated, thereby increasing the efficiency of the manufacturing process.

In addition, the manufacturing method of the display device 10 involves irradiating a laser (LR) to form a plurality of laser spots (SPOTs) arranged in the X-axis, Y-axis, and Z-axis directions in a three-dimensional space, and etching them. May include processes. In the etching process, the mother substrate (MSUB) may be etched along the laser spots (SPOT), and the sides (SS1, SS2) of the substrate (SUB) cut according to the positions of the laser spots (SPOT) may have a curved shape. You can have it. Accordingly, the substrate SUB of the display device 10 may be resistant to external shock.

Hereinafter, various embodiments of the display device 10 will be described with reference to other drawings.

Figure 28 is a cross-sectional view showing a partial area of a display panel according to another embodiment. FIG. 29 is a cross-sectional view showing an etching process during the manufacturing process of the display device of FIG. 28.

Referring to FIGS. 28 and 29 , the display device 10_1 according to an embodiment may have an edge EG located at 1/2 the total thickness of the substrate SUB, and the first side SS1 and The second side surfaces SS2 may have the same curvature and the same length. The display device 10_1 may have a substrate SUB in which the first side SS1 and the second side SS2 have a symmetrical shape with respect to the edge EG. Accordingly, the display device 10_1 may have a shape in which the side surfaces SS1 and SS2 of the substrate SUB have a uniform curvature, and resistance to external shock may be further improved.

In the display device 10_1, a process of etching the mother substrate MSUB along the laser spot SPOT may be performed simultaneously on the first and second sides of the mother substrate MSUB. During the etching process of the mother substrate (MSUB), a portion of the second protective film (PRF2) may expose the first or top surface of the mother substrate (MSUB). The etching process may be performed simultaneously on the second surface of the mother substrate MSUB where the second protective film PRF2 is not disposed, or on the lower surface and the upper surface exposed by the second protective film PRF2. The mother substrate (MSUB) can be etched along a trajectory formed by laser spots (SPOTs), and the etching speed can be further increased by an etching process performed simultaneously on the top and bottom surfaces. Accordingly, the manufacturing process time of the display device 10_1 can be shortened, and the shape of the side surfaces SS1 and SS2 can become smoother depending on the process conditions of the etching process.

Figure 30 is a cross-sectional view showing a partial area of a display panel according to another embodiment. FIG. 31 is a micrograph showing the edge of the substrate in the display panel of FIG. 30.

Referring to FIGS. 30 and 31 , the display device 10_2 according to one embodiment may have a side surface SS and a first inclined surface IP1. The side surface (SS) and the first inclined surface (IP1) may be formed to be inclined rather than parallel or perpendicular to the upper surface (US) and the lower surface (BS), respectively. The side surface (SS) and the first inclined surface (IP1) may overlap the edge area (EGA) where processing traces remain in the thickness direction (Z-axis direction).

The angle θ1 formed between the side surface SS and the top surface UP of the substrate SUB of the display panel 100 may be approximately 80°. The angle θ2 formed between the side surface SS of the substrate SUB and the first inclined surface IP1 and the angle θ3 formed between the first inclined surface IP1 and the lower surface BS may be obtuse angles.

The display device 10_2 in which the side surface SS and the first inclined surface IP1 are inclined may have slanted trajectories of laser spots SPOT during the manufacturing process. The trajectory formed by the laser spots (SPOT) may not necessarily have a curved shape, and the trajectory may be designed to fit a shape that allows the cut substrate (SUB) to have strong impact resistance characteristics. Accordingly, the side shape of the substrate SUB of the display device 10_2 may be modified in various ways.

Figure 32 is a plan view showing a non-display area of a display panel according to another embodiment. FIG. 33 is a cross-sectional view taken along line S2-S2' of FIG. 32.

Referring to FIGS. 32 and 33 , the display device 10_3 according to one embodiment may further include a heat dissipation layer (IRL) disposed to overlap the crack dam (CRD). The heat dissipation layer (IRL) is disposed on the outer portion of the display panel 100 and is disposed inside the edge area (EGA) and may overlap with the crack dam (CRD).

In the manufacturing process of the display device 10, the heat dissipation layer (IRL) dissipates heat generated by the laser irradiated in the cutting process of the mother substrate (MSUB) or increases the infrared absorption rate so that the display panel can be used by the laser in the cutting process. (100) can be minimized. For example, the heat dissipation layer (IRL) may include a metal material with high thermal conductivity or a material with high infrared absorption rate. The heat dissipation layer (IRL) is made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It can be formed as a single layer or multiple layers made of an alloy.

The width of the heat dissipation layer (IRL) may be larger than the width of the edge area (EGA). For example, the width of the heat radiation layer (IRL) may be between 50 μm and 300 μm. However, it is not limited to this.

Figure 34 is a cross-sectional view showing a partial area of a display panel according to another embodiment.

Referring to FIG. 34 , the display device 10_4 according to an embodiment may further include a protective layer PL disposed on the edge EG of the display panel 100 . The protective layer PL may be disposed to cover a portion of the side surfaces SS1 and SS2 and the top surface US of the substrate SUB of the display panel 100. The protective layer PL overlaps the edge area EGA and may partially cover processing traces formed on the upper surface US of the substrate SUB.

As described above, in the manufacturing process of the display device 10_4, a process of separating the substrate SUB from the mother substrate MSUB may be performed through a laser irradiation process and an etching process. Accordingly, an edge area EGA with processing traces may be formed on the substrate SUB of the display panel 100, and inclined or curved side surfaces SS1 and SS2 may be formed. Since this structural form of the display panel 100 may be relatively vulnerable to external shock, in order to protect it, the display device 10_4 has a protective layer (PL) disposed on the cross section of the substrate SUB of the display panel 100. ) may further be included.

The protective layer PL may be disposed on a cross section that is cut by performing a laser irradiation process and an etching process when the substrate SUB is separated from the mother substrate MSUB during the manufacturing process of the display device 10_4. In the drawing, the protective layer PL is illustrated to cover the side surfaces SS1 and SS2 and a portion of the top surface US of the substrate SUB of the display panel 100, but is not limited thereto. In another embodiment, the protective layer PL may completely cover the side surface SS and the first inclined surface IP1 of the substrate SUB of the display panel 100, and another protective layer PL may cover the substrate SUB. ) can be further placed on the bottom of the.

Although embodiments of the present invention have been described above with reference to the attached drawings, those skilled in the art will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. You will be able to understand it. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive.

10: display device
100: display panel
200: driving integrated circuit
300: circuit board
SUB: Substrate
EG: edge
EGA: edge area
TFTL: thin film transistor layer
EML: light emitting element layer
ENC: Encapsulation layer

Claims (28)

a glass substrate including a first side, a second side facing the first side, and a side disposed between the first side and the second side;
an outermost structure disposed on the first side of the glass substrate and adjacent to an edge of the side of the glass substrate; and
a display area including a plurality of light emitting areas arranged to be spaced apart from the edge of the outermost structure on the first surface of the glass substrate,
The side surface of the glass substrate has a curved shape and the edge protrudes outward,
The side includes a first side between the edge and the first side, and a second side between the edge and the second side and having a different curvature than the first side,
The display device wherein the glass substrate includes an edge area on the first surface adjacent to the edge where processing traces remain. According to claim 1,
The display device has a curvature of the second side surface of 200㎛R to 300㎛R. According to claim 1,
The length of the first side is shorter than the length of the second side,
The second side of the display device has a gentler curvature than the first side. According to claim 1,
The width of the second side protruding from the end of the second side to the edge is in a range of 10% to 20% of the total thickness of the glass substrate. According to clause 4,
The width of the second side protruding to the edge is in a range of 20 μm to 40 μm. According to claim 1,
A display device in which the diameter of the glass gap formed on the surface of the first side is smaller than the diameter of the glass gap formed on the surface of the second side. According to clause 6,
The diameter of the glass pores formed on the surface of the first side ranges from 5 ㎛ to 30 ㎛,
The display device wherein the glass gap formed on the surface of the second side has a diameter in the range of 30 μm to 50 μm. According to claim 1,
A vertical distance between the second surface of the glass substrate and a virtual surface parallel to the edge is in a range of 50% to 60% of the total thickness of the glass substrate. According to clause 8,
A display device wherein the vertical distance ranges from 100 ㎛ to 120 ㎛. According to claim 1,
A display device wherein the minimum distance from the edge of the glass substrate to the outermost structure is 130 μm or less. According to claim 1,
A display device wherein the width of the edge area is 50㎛ or less. According to claim 1,
Further comprising an encapsulation layer covering the display area and the outermost structure,
The encapsulation layer includes a first encapsulation inorganic film, an encapsulation organic film disposed on the first encapsulation inorganic film, and a second encapsulation inorganic film disposed on the encapsulation organic film,
The first encapsulation inorganic layer and the second encapsulation inorganic layer cover the outermost structure. preparing a mother substrate and forming a plurality of display cells on a first side of the mother substrate;
forming a cutting line around the display cell by irradiating a laser on a second side of the mother substrate opposite to the first side; and
Etching the mother substrate along the second surface and the cutting line to separate the substrate on which the display cell is formed,
The laser forms a plurality of laser spots spaced apart from each other between the first and second surfaces of the mother substrate,
The plurality of laser spots form a trajectory having a curvature within the three-dimensional space of the mother substrate,
An angle of incidence between the second surface of the plurality of laser spots and an imaginary line connecting the four laser spots located closest to the second surface ranges from 70° to 90°,
A method of manufacturing a display device in which an emission angle between the first surface of the plurality of laser spots and an imaginary line connecting the four laser spots located closest to the first surface is in the range of 35° to 40°. . According to claim 13,
A method of manufacturing a display device in which the curvature of the trajectory formed by the plurality of laser spots has a size of approximately 500㎛R. According to claim 14,
A method of manufacturing a display device in which the processing area in the thickness direction in which the laser spots are formed in the mother substrate across the thickness direction of the mother substrate has a range of 95% to 100% of the thickness of the mother substrate. According to claim 15,
The position of the spot located at the outermost curvature in the trajectory formed by the plurality of laser spots is located at a point approximately 30% of the processing area in the thickness direction of the laser spots from the second surface. Manufacturing method. According to claim 16,
The processing area in the thickness direction where the laser spots are formed ranges from 450 ㎛ to 500 ㎛,
The method of manufacturing a display device wherein the location of the outermost spot of curvature is spaced apart from the second surface by a distance of approximately 150㎛. delete According to claim 13,
The horizontal interval between the laser spot located closest to the second surface among the plurality of laser spots and the curvature outermost spot located at the outermost curvature in the trajectory is in the range of 10㎛ to 20㎛,
The horizontal interval between the laser spot located closest to the first surface among the plurality of laser spots and the curvature-outermost spot located at the outermost curvature in the trajectory is in the range of 120㎛ to 150㎛. According to claim 13,
The pulse width of the laser ranges from 10 μJ to 500 μJ,
A method of manufacturing a display device wherein the length of the laser spot in the thickness direction is in the range of 20㎛ to 25㎛. According to claim 13,
The substrate separated from the mother substrate includes a side disposed between the first side and the second side,
The side surface includes a first side between an edge of the substrate and the first surface, and a second side between the edge and the second surface and having a symmetrical shape with the first side. According to claim 21,
In the step of etching the mother substrate along the second surface and the cutting line, the first surface is also etched. a glass substrate including a first side, a second side facing the first side, and a side disposed between the first side and the second side;
an outermost structure disposed on the first side of the glass substrate and adjacent to an edge of the side of the glass substrate; and
a display area including a plurality of light emitting areas arranged to be spaced apart from the edge of the outermost structure on the first surface of the glass substrate,
The side surface of the glass substrate has a curved shape and the edge protrudes outward,
The side includes a first side between the edge and the first side, and a second side between the edge and the second side and having a symmetrical shape with the first side,
The glass substrate includes an edge area adjacent to the edge of the first surface, where processing traces remain. According to clause 23,
A display device in which the length of the first side and the length of the second side are the same. According to clause 23,
The width of the second side protruding from the end of the second side to the edge is in a range of 10% to 20% of the total thickness of the glass substrate. According to clause 25,
The width of the second side protruding to the edge is in a range of 20 μm to 40 μm. According to clause 23,
A display device wherein the minimum distance from the edge of the glass substrate to the outermost structure is 130 μm or less. According to clause 23,
A display device wherein the width of the edge area is 50㎛ or less.

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