KR102663316B1 - upper elelctrode, semiconductor device manufacturing apparatus including the same and manufacturing method for semiconductor device - Google Patents

Abstract

Examples include a flat top surface; and providing an upper electrode that faces the upper surface and includes a lower surface including a curved surface, wherein the lower surface includes a first Rz and a second Rz, wherein the first Rz is measured in a radial direction from the center of the lower surface. , the second Rz is measured in a circumferential direction perpendicular to the radial direction, and the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3.

Description

Upper electrode, semiconductor device manufacturing apparatus including same and manufacturing method for semiconductor device {upper elelctrode, semiconductor device manufacturing apparatus including the same and manufacturing method for semiconductor device}

Embodiments relate to an upper electrode, a semiconductor device manufacturing apparatus including the same, and a semiconductor device manufacturing method.

In general, a showerhead for semiconductor etching is equipment used to etch wafers by spraying gas in a plasma state from a semiconductor manufacturing chamber to a silicon wafer.

The showerhead has a plurality of gas injection holes and passes gas in a plasma state through the gas injection holes.

In order to precisely etch the wafer, the holes in the showerhead must be created precisely.

For this purpose, as in Prior Document 1 (Korean Patent No. 10-0299975) and Prior Document 2 (Korean Patent No. 10-0935418), a disk made of abrasive and silicon is opposed to a drilling plate on which a plurality of tips are protruding, Abrasives were supplied to the drilling plate and disk, and ultrasonic waves were applied to the drilling plate to drill the disk.

In Prior Literature 1 and Prior Literature 2, when processing a thick shower head, the length of the pin inserted into the drilling plate becomes longer. This causes the pin to vibrate when ultrasonic waves are generated, causing a problem in which the holes in the showerhead are not formed uniformly.

In particular, silicon carbide (Sic), which is a 1:1 combination of silicon (Si) and carbon (C), is a strong covalent material and has higher thermal conductivity than other ceramic materials, as well as wear resistance, high temperature strength, and durability. Because it has excellent chemical properties, it is widely used to reinforce, supplement, or replace mechanical properties in areas where mechanical properties are weak or essential. In particular, its Mohs hardness is 9.2, the second highest after diamond, so it is widely used in the field of semiconductor components due to its excellent durability.

The embodiment is intended to provide an upper electrode capable of forming uniform plasma uniformly throughout, suppressing residual oil by-products, and preventing the generation of defects, a semiconductor device manufacturing apparatus including the same, and a method of manufacturing a semiconductor device.

The upper electrode according to the embodiment has a flat upper surface; and a lower surface facing the upper surface and including a curved surface, wherein the lower surface includes a first Rz and a second Rz, wherein the first Rz is measured in a radial direction from the center of the lower surface, and the second Rz is measured in the circumferential direction perpendicular to the radial direction, and the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3.

In the upper electrode according to one embodiment, the first Rz may be 2㎛ to 8㎛, and the second Rz may be 2㎛ to 8㎛.

In the upper electrode according to one embodiment, the lower surface includes a first Rp and a second Rp, the first Rp is measured in a radial direction from the center of the lower surface, and the second Rp is measured with respect to the radial direction. Measured in a perpendicular circumferential direction, the ratio of the first Rp and the second Rp may be 1:0.7 to 1:1.3.

In the upper electrode according to one embodiment, the first Rp may be 1㎛ to 4㎛, and the second Rp may be 1㎛ to 4㎛.

In the upper electrode according to one embodiment, the lower surface includes a first Rv and a second Rv, the first Rv is measured in a radial direction from the center of the lower surface, and the second Rv is measured with respect to the radial direction. Measured in a perpendicular circumferential direction, the ratio of the first Rv and the second Rv may be 1:0.7 to 1:1.3.

In the upper electrode according to one embodiment, the first Rv may be 1㎛ to 4㎛, and the second Rv may be 1㎛ to 4㎛.

In the upper electrode according to one embodiment, the lower surface includes a first Rq and a second Rq, the first Rq is measured in a radial direction from the center of the lower surface, and the second Rq is measured with respect to the radial direction. Measured in a perpendicular circumferential direction, the ratio of the first Rq and the second Rq may be 1:0.7 to 1:1.3.

In the upper electrode according to one embodiment, the lower surface includes a first Rsk and a second Rsk, the first Rsk is measured in a radial direction from the center of the lower surface, and the second Rsk is measured with respect to the radial direction. Measured in a perpendicular circumferential direction, the ratio of the first Rsk and the second Rsk may be 1:0.9 to 1:4.

In the upper electrode according to one embodiment, the lower surface includes a first Rku and a second Rku, the first Rku is measured in a radial direction from the center of the lower surface, and the second Rku is measured with respect to the radial direction. Measured in a perpendicular circumferential direction, the ratio of the first Rku and the second Rku may be 1:0.9 to 1:1.5.

In the upper electrode according to one embodiment, the lower surface includes a first Rsm and a second Rsm, the first Rsm is measured in a radial direction from the center of the lower surface, and the second Rsm is measured with respect to the radial direction. Measured in a vertical circumferential direction, the ratio of the first Rsm and the second Rsm may be 1:0.7 to 1:1.3.

A semiconductor device manufacturing apparatus according to an embodiment includes an upper electrode facing a semiconductor substrate and spraying a process gas; a support portion supporting the semiconductor substrate and disposed below the semiconductor substrate; and a focus ring surrounding the semiconductor substrate and provided on the support portion, wherein the upper electrode has a flat upper surface; and a lower surface facing the upper surface and including a curved surface, wherein the lower surface includes a first Rz and a second Rz, wherein the first Rz is measured in a radial direction from the center of the lower surface, and the second Rz is measured in the circumferential direction perpendicular to the radial direction, and the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3.

A method of manufacturing a semiconductor device according to an embodiment includes placing a semiconductor substrate in a semiconductor device manufacturing apparatus; and processing the semiconductor substrate, wherein the semiconductor device manufacturing apparatus includes an upper electrode facing the semiconductor substrate and spraying a process gas; a support portion supporting the semiconductor substrate and disposed below the semiconductor substrate; and a focus ring surrounding the semiconductor substrate and provided on the support portion, wherein the upper electrode has a flat upper surface; and a lower surface facing the upper surface and including a curved surface, wherein the lower surface includes a first Rz and a second Rz, wherein the first Rz is measured in a radial direction from the center of the lower surface, and the second Rz is measured in the circumferential direction perpendicular to the radial direction, and the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3.

The lower surface of the upper electrode according to the embodiment includes a curved surface. Accordingly, the upper electrode according to the embodiment may have a thickness that varies depending on the radius. The lower surface of the upper electrode according to the embodiment may include a profile having a thickness change rate that gradually changes along the radial direction.

Additionally, the upper electrode according to the embodiment may have a characteristic that the thickness becomes appropriately thinner as it goes from the center to the outside. That is, the lower surface of the upper electrode according to the embodiment may have a downwardly convex shape at the center portion and may have a profile that is appropriately thin.

Accordingly, the upper electrode according to the embodiment can reinforce the plasma in the central portion, thereby improving the straightness of the plasma.

Accordingly, the upper electrode according to the embodiment can generate an overall uniform plasma.

In particular, as the diameter of the upper electrode increases, plasma density may decrease toward the central portion of the upper electrode. At this time, because the upper electrode includes profiles having the above thickness change rate, an overall uniform plasma can be realized.

Additionally, the lower surface may have a first Rz and a second Rz in the same range as above. In addition, the lower surface has 1st Rp, 1st Rv, 1st Rq, 1st Rsk, 1st Rku, 1st Rsm, 2nd Rp, 2nd Rv, 2nd Rq, 2nd Rsk, It may have a second Rku or/and a first Rsm.

In particular, the lower surface may have surface characteristics with little variation depending on the direction, as described above. That is, the lower surface may have surface characteristics close to isotropic as a whole.

Since the lower surface has a curved surface and the above surface characteristics, the upper electrode according to the embodiment can suppress the generation of residual oil process by-products. Additionally, the upper electrode according to the embodiment can prevent adsorption of the residual oil process by-products.

Accordingly, the upper electrode according to the embodiment can prevent defects such as scratches or chatter marks during a process for manufacturing a semiconductor device.

In addition, the upper electrode according to the embodiment suppresses the concentration of plasma in a specific part during the process for manufacturing the semiconductor device, thereby preventing the specific part from being etched.

Accordingly, the upper electrode according to the embodiment can suppress excessive wear caused by plasma in the plasma generation area. Accordingly, the semiconductor device manufacturing apparatus including the upper electrode according to the embodiment may have improved durability.

1 is a perspective view showing an upper electrode according to one embodiment.
Figure 2 is a cross-sectional view showing a cross-section of an upper electrode according to an embodiment.
Figure 3 is a plan view showing the lower surface of the upper electrode according to one embodiment.
Figure 4 is a perspective view showing a focus ring according to an embodiment.
Figure 5 is a cross-sectional view showing a cross-section of a focus ring according to an embodiment.
FIG. 6 is a diagram illustrating a semiconductor device manufacturing apparatus according to an embodiment.
Figure 7 is a cross-sectional view showing a plasma region confinement assembly according to one embodiment.

In the description of the embodiment, when each part, surface, layer, or substrate is described as being formed “on” or “under” each part, surface, layer, or substrate, “On” and “under” include those formed “directly” or “indirectly” through other components. In addition, the standards for the top or bottom of each component are explained based on the drawings. The size of each component in the drawings may be exaggerated for explanation and does not indicate the actual size.

The upper electrode according to the embodiment may be a component used in a manufacturing device for manufacturing a semiconductor device. That is, the upper electrode may be a component that forms part of the semiconductor device manufacturing apparatus.

The upper electrode may be a component used in a plasma processing device for manufacturing semiconductor devices. The upper electrode may be a component used in a plasma etching device for selectively etching a semiconductor substrate.

The upper electrode may be a component that forms part of an upper electrode assembly for spraying plasma.

Additionally, the upper electrode may be a component that forms part of an assembly that accommodates the wafer and defines the plasma region.

1 is a perspective view showing an upper electrode according to one embodiment. Figure 2 is a cross-sectional view showing a cross-section of an upper electrode according to an embodiment. Figure 3 is a plan view showing the lower surface of the upper electrode according to one embodiment. Figure 4 is a perspective view showing a focus ring according to an embodiment. Figure 5 is a cross-sectional view showing a cross-section of a focus ring according to an embodiment. FIG. 6 is a diagram illustrating a semiconductor device manufacturing apparatus according to an embodiment. Figure 7 is a cross-sectional view showing a plasma region confinement assembly according to one embodiment.

Referring to FIGS. 1 and 2 , the upper electrode 220 according to the embodiment may have a circular plate shape. The upper electrode 220 according to an embodiment may have a shape whose thickness gradually changes in the radial direction.

The upper electrode 220 includes a first upper surface 221, a first lower surface 222, and a first side surface 223.

The first upper surface 221 and the first lower surface 222 face each other.

The first upper surface 221 may be located in an area where gas for forming plasma flows. The first upper surface 221 may be entirely flat. The first upper surface 221 may not substantially include steps or curves.

The first lower surface 222 may be located in the plasma area 114. The first lower surface 222 may include a curve. The first lower surface 222 may be curved in the radial direction. A portion of the first lower surface 222 may be curved and a portion may be flat.

The first side 223 extends from the first upper surface 221 to the first lower surface 222. The first side 223 may be the outer peripheral surface of the upper electrode 220.

The upper electrode 220 includes a plurality of through holes 226. The through hole 226 extends from the first upper surface 221 to the first lower surface 222. Plasma may be sprayed from the first upper surface 221 down to the upper electrode 220 through the through hole 226.

The diameter of the through hole 226 may be about 0.3 mm to about 1 mm.

The spacing between the through holes 226 may be about 1 cm to about 10 cm. The spacing between the through holes 226 may be about 3 cm to about 8 cm.

A step may be formed on the first side 223. That is, a part of the first side 223 and another part of the first side 223 may be disposed on different planes. Accordingly, the upper electrode 220 may include a step portion 225 on the first side 223.

The step portion 225 may be caught or coupled to other components used in the semiconductor device manufacturing apparatus.

No steps are formed on the first side 223 and the first side 223 may be flat overall. That is, on the first side 223, the step portion may be omitted.

The upper electrode 220 may have a thickness at a specific radius from the center. That is, the thickness from the first upper surface 221 to the first lower surface 222 may be determined according to the radius in a horizontal direction from the center that is flat with the first upper surface 221.

The thickness direction from the first upper surface 221 to the first lower surface 222 may be perpendicular to the first upper surface 221. The upper electrode 220 may have a linearly symmetric structure. That is, the upper electrode 220 may have a line-symmetric structure with respect to the center line C that passes vertically through the center of the first upper surface 221. At this time, the thickness (T) from the first upper surface 221 to the first lower surface 222 may be a function (T(R)) of the radius (R). That is, the upper electrode 220 may have the same radius and substantially the same thickness.

Additionally, the radius R is the distance from the center of the first lower surface 222 in the horizontal and radial directions. The horizontal direction may be substantially parallel to the first upper surface 221. Additionally, the horizontal direction may be substantially perpendicular to the thickness direction.

Additionally, the thickness change rate may be a thickness change according to a change in radius. The thickness change rate may be a value obtained by dividing the thickness change by the radius change. That is, the thickness change rate may be a value obtained by differentiating the thickness by the radius.

The thickness change rate can be derived by Equation 1 below.

[Formula 1]

dTR = ( T11 - T12 ) / (R11 - R12)

Here, dTR is the thickness change rate, T1 is the thickness at the radius MR1, and T2 is the thickness at the radius MR2.

The thickness of the upper electrode 220 can be measured using a thickness gauge. Additionally, the thickness of the upper electrode 220 may be measured in a direction perpendicular to the horizontal direction from the first upper surface 221 to the first lower surface 222. The thickness from the first upper surface 221 to the first lower surface 222 may be measured at a plurality of measurement points. The thickness from the first upper surface 221 to the first lower surface 222 may be measured at a measurement interval of about 0.2 mm to about 0.4 mm. The spacing between the measurement points may be selected from about 0.2 mm to about 0.4 mm. The thickness from the first upper surface 221 to the first lower surface 222 may be measured at each measurement interval. The measurement interval may be a difference in radii between adjacent measurement points.

Additionally, the thickness change rate can be derived for each measurement interval. That is, the thickness change rate can be calculated between adjacent measurement points. That is, in Equation 1, MR1 - MR2 may be the measurement interval. The MR1 - MR2 may be 0.2 mm to about 0.4 mm. The measurement interval may be selected from approximately 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, or 0.4 mm.

The first lower surface 222 may include a curved surface. Accordingly, the upper electrode 220 according to the embodiment may have profiles having a gradually changing thickness change rate.

For example, as shown in FIG. 2, the first lower surface 222 has a first profile (P1), a second profile (P2), a third profile (P3), a fourth profile (P4), and a fifth profile. May include profile (P5).

The first profile P1 may be disposed in the center area of the first lower surface 222. The first profile P1 may extend from the center of the first lower surface 222 to the first radius R1. The first profile P1 may have a circular shape when viewed from the top. The first profile P1 may correspond to the center area of the first lower surface 222.

The first radius R1 may be one of about 7.5 mm to about 9.5 mm. The first radius R1 may be one of about 8 mm to 9 mm.

The first profile P1 may have a first thickness change rate. At this time, the first thickness change rate may be an average value of thickness change rates measured in the first profile P1.

The first thickness change rate may be about -0.1 to about 0. The first thickness change rate may be about -0.09 to about 0.

The first thickness change rate may gradually become smaller as it moves from the center C of the first lower surface 222 to the outer edge. The first thickness change rate may approach 0 at the center C of the first lower surface 222 and may gradually become smaller toward the outside.

Additionally, in the first profile P1, at the center C of the first lower surface 222, the first thickness change rate is one of about -0.01 to about 0.01, and at the first radius R1, The first thickness change rate may be one of about -0.09 to about -0.07.

The first thickness change rate may gradually decrease from the center C to the first radius R1 from about -0.01 to about 0.01 to about -0.09 to about -0.07.

The second profile (P2) is disposed further outside than the first profile (P1). The second profile (P2) may surround the first profile (P1). The second profile (P2) may extend along the periphery of the first profile (P1). The second profile (P2) may directly contact the outside of the first profile (P1). That is, the second profile (P2) and the first profile (P1) may be directly connected to each other.

The second profile P2 may have a ring shape when viewed from the top. The second profile P2 may have a donut shape when viewed from the top.

The second profile P2 may be from the first radius R1 to the second radius R2. The second profile P2 may be an area from the first radius R1 to the second radius R2. The second radius R2 may be larger than the first radius R1.

The second radius R2 may be one of about 11 mm to about 14 mm. The second radius R2 may be one of about 12 mm to about 13 mm. The second radius R2 may be one of 12 mm to about 12.6 mm.

The second profile P2 may have a second thickness change rate. The second thickness change rate may be an average value of the thickness change rate in the second profile P2.

The second thickness change rate may be about -0.12 to about -0.08. The second thickness change rate may be about -0.119 to about -0.083. The second thickness change rate may be about -0.10 to about -0.09.

In the second profile P2, the second thickness change rate may gradually become smaller toward the outer edge. That is, in the second profile P2, the second thickness change rate may have the largest value at the innermost side and the smallest value at the outermost side.

At the first radius R1, the second thickness change rate may be one of about -0.07 to -0.09. At the second radius R2, the second thickness change rate may be one of about -0.115 to about -0.122.

The second thickness change rate may gradually decrease from about -0.07 to -0.09 to about -0.115 to about -0.122 as it goes from the first radius (R1) to the second radius (R2).

The third profile (P3) is disposed outside the second profile (P2). The third profile (P3) may surround the first profile (P1) and the second profile (P2). That is, the third profile (P3) may extend along the periphery of the first profile (P1). The third profile (P3) may extend along the periphery of the second profile (P2). The third profile (P3) may directly contact the outer edge of the second profile (P2). That is, the third profile (P3) and the second profile (P2) may be directly connected to each other.

The third profile P3 may be from the second radius R2 to the third radius R3. That is, the third profile P3 may be an area from the second radius R2 to the third radius R3. The third radius R3 may be larger than the second radius R2.

The third radius R3 may be one of about 54 mm to about 60 mm. The third radius R3 may be one of about 55 mm to about 59 mm. The third radius R3 may be one of 56.5 mm to about 58.5 mm.

The third profile P3 may have a third thickness change rate. The third thickness change rate may be an average value of the thickness change rate in the third profile P3.

The third thickness change rate may be about -0.115 to about -0.122. The third thickness change rate may be about -0.116 to about -0.121. The third thickness change rate may be about -0.117 to about -0.120.

In the third profile P3, the third thickness change rate may be constant overall. That is, in the third profile P3, the third thickness change rate may have a small deviation. The deviation of the third thickness change rate may be less than 0.006. The deviation of the third thickness change rate may be less than 0.005. The deviation of the third thickness change rate may be less than 0.004.

At the second radius R2, the third thickness change rate may be one of about -0.115 to -0.122. At the third radius R3, the third thickness change rate may be one of about -0.115 to about -0.122.

The fourth profile (P4) is disposed outside the third profile (P3). The fourth profile (P4) may surround the first profile (P1), the second profile (P2), and the third profile (P3). That is, the fourth profile (P4) may extend along the periphery of the first profile (P1). The fourth profile (P4) may extend along the periphery of the second profile (P2). The fourth profile (P4) may extend along the periphery of the third profile (P3). The fourth profile (P4) may directly contact the outer edge of the third profile (P3). That is, the fourth profile (P4) and the third profile (P3) may be directly connected to each other.

The fourth profile P4 may be from the third radius R3 to the fourth radius R4. That is, the fourth profile P4 may be an area from the third radius R3 to the fourth radius R4. The fourth radius R4 may be larger than the third radius R3.

The fourth radius R4 may be one of about 86 mm to about 92 mm. The fourth radius R4 may be one of about 87 mm to about 91 mm. The fourth radius R4 may be one of 87 mm to about 90 mm.

The fourth profile P4 may have a fourth thickness change rate. The fourth thickness change rate may be an average value of the thickness change rate in the fourth profile P4.

The fourth thickness change rate may be about -0.121 to about 0. The third thickness change rate may be about -0.120 to about 0. The third thickness change rate may be about -0.120 to about 0.003. The third thickness change rate may be about -0.08 to about -0.03.

In the fourth profile P4, the fourth thickness change rate may gradually increase toward the outer edge.

At the third radius R3, the fourth thickness change rate may be one of about -0.115 to -0.122. At the fourth radius R4, the fourth thickness change rate may be one of about -0.01 to about 0.01.

The fourth thickness change rate may gradually increase from about -0.115 to -0.122 to -0.01 to about 0.01 as it goes from the third radius (R3) to the fourth radius (R4).

The fifth profile (P5) is disposed outside the fourth profile (P4). The fifth profile (P5) may surround the first profile (P1), the second profile (P2), the third profile (P3), and the fourth profile (P4). That is, the fifth profile (P5) may extend along the periphery of the first profile (P1). The fifth profile (P5) may extend along the periphery of the second profile (P2). The fifth profile (P5) may extend along the periphery of the third profile (P3). The fifth profile (P5) may extend along the periphery of the fourth profile (P4). The fifth profile (P5) may directly contact the outer edge of the fourth profile (P4). That is, the fifth profile (P5) and the fourth profile (P4) may be directly connected to each other.

The fifth profile P5 may be from the fourth radius R4 to the fifth radius R5. That is, the fifth profile P5 may be an area from the fourth radius R4 to the fifth radius R5. The fifth radius R5 may be larger than the fourth radius R4. Additionally, the fifth radius R5 may be the outer edge of the upper electrode 220.

The fifth radius R5 may be one of about 98 mm to about 105 mm. The fifth radius R5 may be one of about 98 mm to about 102 mm. The fifth radius R5 may be one of 98 mm to about 100 mm.

The fifth profile P5 may have a fifth thickness change rate.

The fifth thickness change rate may be about -0.005 to about 0.005. The fifth thickness change rate may be about -0.003 to about 0.003. The fifth thickness change rate may be about -0.002 to about 0.002.

In the fifth profile P5, the fifth thickness change rate may be constant overall. That is, in the fifth profile P5, the fifth thickness change rate may have a small deviation. The deviation of the fifth thickness change rate may be less than 0.006. The deviation of the fifth thickness change rate may be less than 0.005. The deviation of the fifth thickness change rate may be less than 0.003.

At the center of the first lower surface 222, the thickness may be about 14 mm to about 20 mm. At the center of the first lower surface 222, the thickness may be about 15 mm to about 17 mm.

In the fifth profile P5, the thickness may be about 6 mm to about 10 mm. In the fifth profile P5, the thickness may be about 7 mm to about 9 mm.

Additionally, the overall radius of the upper electrode 220 may be substantially equal to the fifth radius R5. The overall radius of the upper electrode 220 may be about 98 mm to about 106 mm.

Additionally, a value obtained by dividing the first radius R1 by the total radius of the upper electrode 220 may be 0.075 to 0.095. A value obtained by dividing the second radius R1 by the total radius of the upper electrode 220 may be 0.11 to 0.14. A value obtained by dividing the third radius R3 by the total radius of the upper electrode 220 may be 0.48 to 0.54. A value obtained by dividing the fourth radius R4 by the total radius of the upper electrode 220 may be 0.88 to 0.92. A value obtained by dividing the fifth radius R5 by the total radius of the upper electrode 220 may be 0.97 to 1.

The deviation may be an absolute value of the difference between the thickness change rate and average value at each location.

Additionally, the upper electrode 220 may further include a fastening groove (not shown) for fastening with other components. At this time, the thickness of the upper electrode 220 can be measured while ignoring the fastening groove. That is, the thickness of the upper electrode 220 can be measured assuming that the fastening groove is filled.

As previously described, the upper electrode 220 according to the embodiment may have a thickness that varies depending on the radius. Accordingly, the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), and the fifth profile (P5) have a thickness change rate in the same range as above. You can have

Accordingly, the upper electrode 220 according to the embodiment may have a characteristic that the thickness becomes appropriately thinner from the center to the outside. That is, the lower surface of the upper electrode 220 according to the embodiment may have a downwardly convex shape at the center portion and may have a profile that is appropriately thin. Additionally, the fifth profile P5 may have an appropriate width and an overall flat shape.

Accordingly, the upper electrode 220 according to the embodiment can suppress plasma from gathering in the central portion and appropriately guide plasma to the outside.

Accordingly, the upper electrode 220 according to the embodiment can generate an overall uniform plasma.

The upper electrode 220 according to the embodiment can appropriately guide plasma from the center to the outside. That is, the upper electrode 220 according to the embodiment can form plasma uniformly overall and provide high straightness to the plasma.

Accordingly, the upper electrode 220 can undergo an etching process with a uniform thickness. That is, the semiconductor device manufacturing apparatus equipped with the upper electrode 220 can uniformly control the etching thickness of the semiconductor substrate.

Additionally, the first lower surface 222 may have Rz, Rp, Rv, Rc, Rt, Rq, Rsk, Rku, and RSm. The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm may be parameters expressing the roughness of the surface. The Rz, the Rp, the Rv, the Rc, the Rt, and the Rq may be Rz illuminance, Rp illuminance, Rv illuminance, Rc illuminance, Rt illuminance, and Rq illuminance, respectively.

The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm may be defined by ISO 4287-1997 or ISO 4287-1996.

The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm can be measured by a surface roughness meter (RT10 TNS-Surftester). The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku and the RSm can be measured by a digital optical microscope (VHX-7000 from Keyence).

The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm may be measured in a length of about 400 μm to about 1000 μm. The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm may be measured along a straight line having a length of one of about 400 μm to about 1000 μm.

The Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm may be measured at a height of about 10 μm to about 100 μm.

In addition, the Rz, the Rp, the Rv, the Rc, the Rt, the Rq, the Rsk, the Rku, and the RSm can be measured more than 10 times at random positions on the surface and obtained as average values. .

The first lower surface 222 may include a first Rz, a first Rp, a first Rv, a first Rc, a first Rt, a first Rq, a first Rsk, a first Rku, and a first RSm.

The first Rz, the first Rp, the first Rv, the first Rc, the first Rt, the first Rq, the first Rsk, the first Rku and the first RSm are the first lower surface ( These are the values measured in the radial direction (RD) from the center (C) of 222).

That is, the first Rz, the first Rp, the first Rv, the first Rc, the first Rt, the first Rq, the first Rsk, the first Rku and the first RSm are the first The length may be measured along the radial direction RD from the center C of the lower surface 222 toward the outside.

The first lower surface 222 may include a second Rz, a second Rp, a second Rv, a second Rc, a second Rt, a second Rq, a second Rsk, a second Rku, and a second RSm.

The 2nd Rz, the 2nd Rp, the 2nd Rv, the 2nd Rc, the 2nd Rt, the 2nd Rq, the 2nd Rsk, the 2nd Rku and the 2nd RSm are oriented in the radial direction (RD These are values measured in the circumferential direction (CD) perpendicular to ).

That is, the 2nd Rz, the 2nd Rp, the 2nd Rv, the 2nd Rc, the 2nd Rt, the 2nd Rq, the 2nd Rsk, the 2nd Rku and the 2nd RSm are in the circumferential direction. (CD), which can be measured by the above length.

In the first lower surface 222, the first Rz may be about 1 μm to about 10 μm. In the first lower surface 222, the first Rz may be about 2 μm to about 8 μm. In the first lower surface 222, the first Rz may be about 3 μm to about 7 μm. In the first lower surface 222, the first Rz may be about 1㎛ to about 33㎛. In the first lower surface 222, the first Rz may be about 1 μm to about 8 μm.

Since the first lower surface 222 has the first Rz in the same range as above, the first lower surface 222 may have a convex-convex shape with an appropriate height difference from the peak to the valley. Accordingly, the upper electrode 220 can appropriately induce the flow of plasma process gas. Additionally, since the first lower surface 222 has the first Rz in the same range as above, the adhesion of process by-products can be suppressed.

In the first lower surface 222, the first Rp may be about 0.3 μm to about 5 μm. In the first lower surface 222, the first Rp may be about 1 μm to about 4 μm. In the first lower surface 222, the first Rp may be about 1 μm to about 5 μm. In the first lower surface 222, the first Rp may be about 1.5 μm to about 4 μm. In the first lower surface 222, the first Rp may be about 2㎛ to about 3.5㎛. In the first lower surface 222, the first Rp may be about 0.3 μm to about 1.5 μm.

Since the first lower surface 222 has the first Rp in the same range as above, the first lower surface 222 can have a convex-convex shape with an appropriate peak height. Accordingly, the upper electrode 220 can appropriately induce the flow of plasma process gas. Additionally, since the first lower surface 222 has the first Rp in the same range as above, the adhesion of process by-products can be suppressed.

In the first lower surface 222, the first Rv may be about 0.3 μm to about 5 μm. In the first lower surface 222, the first Rv may be about 1 μm to about 4 μm. In the first lower surface 222, the first Rv may be about 1 μm to about 5 μm. In the first lower surface 222, the first Rv may be about 1.5 μm to about 4 μm. In the first lower surface 222, the first Rv may be about 2㎛ to about 3.5㎛. In the first lower surface 222, the first Rv may be about 0.3 μm to about 1.5 μm.

Since the first lower surface 222 has the first Rv in the same range as above, it can have a concave-convex shape with an appropriate valley depth. Accordingly, the upper electrode 220 can appropriately induce the flow of plasma process gas. Additionally, since the first lower surface 222 has the first Rv in the same range as above, the adhesion of process by-products can be suppressed.

In the first lower surface 222, the first Rv may be larger than the first Rp. In the first lower surface 222, the first valley ratio may be about 0.55 to about 0.8. In the first lower surface 222, the first valley ratio may be about 0.55 to about 0.7. In the first lower surface 222, the first valley ratio may be about 0.55 to about 0.65. The first valley ratio is a value obtained by dividing the first Rv by the sum of the first Rp and the first Rv. The first valley ratio can be expressed by Equation 2 below.

[Formula 2]

1st valley ratio = 1st Rv / (1st Rp + 1st Rv)

Since the first lower surface 222 has the first valley ratio in the same range as above, the valley may have a deeper uneven shape. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the first Rc may be about 0.5 μm to about 7 μm. In the first lower surface 222, the first Rc may be about 1 μm to about 6 μm. In the first lower surface 222, the first Rc may be about 1.5 μm to about 5 μm.

Since the first lower surface 222 has the first Rc in the same range as above, it can have a concavo-convex shape with appropriate irregularity. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the first Rt may be about 1 μm to about 10 μm. In the first lower surface 222, the first Rt may be about 1.5 μm to about 10 μm. In the first lower surface 222, the first Rt may be about 2㎛ to about 8㎛.

Since the first lower surface 222 has the first Rt in the same range as above, it can have a concave-convex shape with an appropriate maximum height. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the first Rq may be 0.2 μm to about 5 μm. In the first lower surface 222, the first Rq may be 0.5 μm to about 4 μm. In the first lower surface 222, the first Rq may be 0.7 μm to about 3 μm.

Since the first lower surface 222 has the first Rq in the same range as above, it can have a concave-convex shape with an appropriate average height. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the first Rsk may be about -0.2 to about 0.7. In the first lower surface 222, the first Rsk may be about -0.3 to about 0.6. In the first lower surface 222, the first Rsk may be about -0.2 to about 0.5.

Since the first lower surface 222 has the first Rsk in the same range as above, it can have a concave-convex shape with appropriate asymmetry. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the first Rku may be about 1 to about 8. In the first lower surface 222, the first Rku may be about 1 to about 6. In the first lower surface 222, the first Rku may be about 1.5 to about 5.

Since the first lower surface 222 has the first Rku in the same range as above, it can have an appropriate concave-convex shape. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the first RSm may be about 30 μm to about 200 μm. In the first lower surface 222, the first RSm may be about 40 μm to about 200 μm. In the first lower surface 222, the first RSm may be about 45 μm to about 170 μm.

Since the first lower surface 222 has the first RSm in the same range as above, it can have a concavo-convex shape with appropriate spacing. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the second Rz may be about 1 μm to about 10 μm. In the first lower surface 222, the second Rz may be about 2㎛ to about 8㎛. In the first lower surface 222, the second Rz may be about 3 μm to about 7 μm. In the first lower surface 222, the second Rz may be about 1 μm to about 33 μm. In the first lower surface 222, the second Rz may be about 1 μm to about 8 μm.

Since the first lower surface 222 has the second Rz in the same range as above, the first lower surface 222 can have a convex-convex shape with an appropriate height difference from the peak to the valley. Accordingly, the upper electrode 220 can appropriately induce the flow of plasma process gas. Additionally, since the first lower surface 222 has the second Rz in the same range as above, the adhesion of process by-products can be suppressed.

In the first lower surface 222, the second Rp may be about 0.3 μm to about 5 μm. In the first lower surface 222, the second Rp may be about 1㎛ to about 4㎛. In the first lower surface 222, the second Rp may be about 1 μm to about 5 μm. In the first lower surface 222, the second Rp may be about 1.5 μm to about 4 μm. In the first lower surface 222, the second Rp may be about 2㎛ to about 3.5㎛. In the first lower surface 222, the second Rp may be about 0.3 μm to about 1.5 μm.

Since the first lower surface 222 has the second Rp in the same range as above, it can have a concave-convex shape with an appropriate peak height. Accordingly, the upper electrode 220 can appropriately induce the flow of plasma process gas. Additionally, since the first lower surface 222 has the second Rp in the same range as above, it is possible to suppress the adhesion of process by-products.

In the first lower surface 222, the second Rv may be about 0.3 μm to about 5 μm. In the first lower surface 222, the second Rv may be about 1 μm to about 4 μm. In the first lower surface 222, the second Rv may be about 1 μm to about 5 μm. In the first lower surface 222, the second Rv may be about 1.5 μm to about 4 μm. In the first lower surface 222, the second Rv may be about 2㎛ to about 3.5㎛. In the first lower surface 222, the second Rv may be about 0.3 μm to about 1.5 μm.

Since the first lower surface 222 has the second Rv in the same range as above, the valley depth may have an appropriate uneven shape. Accordingly, the upper electrode 220 can appropriately induce the flow of plasma process gas. Additionally, since the first lower surface 222 has the second Rv in the same range as above, the adhesion of process by-products can be suppressed.

In the first lower surface 222, the second Rv may be larger than the second Rp. In the first lower surface 222, the second valley ratio may be about 0.55 to about 0.8. In the first lower surface 222, the second valley ratio may be about 0.55 to about 0.7. In the first lower surface 222, the second valley ratio may be about 0.55 to about 0.65. The second valley ratio is the second Rv divided by the sum of the second Rp and the second Rv. The second valley ratio can be expressed by Equation 3 below.

[Formula 3]

2nd valley ratio = 2nd Rv / (2nd Rp + 2nd Rv)

Since the first lower surface 222 has the second valley ratio in the same range as above, the valley may have a deeper uneven shape. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the second Rc may be about 0.5 μm to about 7 μm. On the first lower surface 222, the second Rc may be about 1㎛ to about 6㎛. In the first lower surface 222, the second Rc may be about 1.5 μm to about 5 μm.

Since the first lower surface 222 has the second Rc in the same range as above, it can have a concavo-convex shape with appropriate irregularity. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the second Rt may be about 1 μm to about 10 μm. In the first lower surface 222, the second Rt may be about 1.5 μm to about 10 μm. On the first lower surface 222, the second Rt may be about 2㎛ to about 8㎛.

Since the first lower surface 222 has the second Rt in the same range as above, it can have a concave-convex shape with an appropriate maximum height. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the second Rq may be 0.2 μm to about 5 μm. In the first lower surface 222, the second Rq may be 0.5 μm to about 4 μm. In the first lower surface 222, the second Rq may be 0.7 μm to about 3 μm.

Since the first lower surface 222 has the second Rq in the same range as above, it can have a concave-convex shape with an appropriate average height. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the second Rsk may be about -0.2 to about 0.8. In the first lower surface 222, the second Rsk may be about -0.3 to about 0.7. In the first lower surface 222, the second Rsk may be about -0.2 to about 0.6.

Since the first lower surface 222 has the second Rsk in the same range as above, it can have a concave-convex shape with appropriate asymmetry. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

In the first lower surface 222, the second Rku may be about 1 to about 8. In the first lower surface 222, the second Rku may be about 1 to about 6. At the first lower surface 222, the second Rku may be about 1.5 to about 5.

Since the first lower surface 222 has the second Rku in the same range as above, it can have an appropriate concave-convex shape. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

On the first lower surface 222, the second RSm may be about 30 μm to about 200 μm. On the first lower surface 222, the second RSm may be about 40 μm to about 200 μm. On the first lower surface 222, the second RSm may be about 45 μm to about 170 μm.

Since the first lower surface 222 has the second RSm in the same range as above, it can have a concavo-convex shape with appropriate spacing. Accordingly, the upper electrode 220 can prevent the adhesion of the process by-products while smoothing the flow of the plasma process gas.

Additionally, on the first lower surface 222, the ratio of the first Rz and the second Rz may be about 1:0.7 to about 1:1.3. On the first lower surface 222, the ratio of the first Rz and the second Rz may be about 1:0.8 to about 1:1.2. Additionally, on the first lower surface 222, the ratio of the first Rz and the second Rz may be about 1:0.75 to about 1:1.15. Additionally, on the first lower surface 222, the ratio of the first Rz and the second Rz may be about 1:0.9 to about 1:1.1.

Additionally, on the first lower surface 222, the ratio of the first Rp and the second Rp may be about 1:0.7 to about 1:1.3. Additionally, on the first lower surface 222, the ratio of the first Rp and the second Rp may be about 1:0.8 to about 1:1.2. Additionally, in the first lower surface 222, the ratio of the first Rp and the second Rp may be about 1:0.75 to about 1:1.15. Additionally, on the first lower surface 222, the ratio of the first Rp and the second Rp may be about 1:0.9 to about 1:1.1.

Additionally, on the first lower surface 222, the ratio of the first Rv and the second Rv may be about 1:0.7 to about 1:1.3. Additionally, on the first lower surface 222, the ratio of the first Rv and the second Rv may be about 1:0.8 to about 1:1.2. Additionally, on the first lower surface 222, the ratio of the first Rv and the second Rv may be about 1:0.75 to about 1:1.15. Additionally, on the first lower surface 222, the ratio of the first Rv and the second Rv may be about 1:0.9 to about 1:1.1.

Additionally, on the first lower surface 222, the ratio of the first Rc and the second Rc may be about 1:0.7 to about 1:1.3. Additionally, on the first lower surface 222, the ratio of the first Rc and the second Rc may be about 1:0.8 to about 1:1.2. Additionally, on the first lower surface 222, the ratio of the first Rc and the second Rc may be about 1:0.75 to about 1:1.15. Additionally, on the first lower surface 222, the ratio of the first Rc and the second Rc may be about 1:0.9 to about 1:1.1.

Additionally, on the first lower surface 222, the ratio of the first Rt and the second Rt may be about 1:0.7 to about 1:1.3. Additionally, on the first lower surface 222, the ratio of the first Rt and the second Rt may be about 1:0.8 to about 1:1.2. Additionally, on the first lower surface 222, the ratio of the first Rt and the second Rt may be about 1:0.75 to about 1:1.15. Additionally, on the first lower surface 222, the ratio of the first Rt and the second Rt may be about 1:0.9 to about 1:1.1.

Additionally, on the first lower surface 222, the ratio of the first Rq and the second Rq may be about 1:0.7 to about 1:1.3. Additionally, on the first lower surface 222, the ratio of the first Rq and the second Rq may be about 1:0.8 to about 1:1.2. Additionally, on the first lower surface 222, the ratio of the first Rq and the second Rq may be about 1:0.75 to about 1:1.15. Additionally, on the first lower surface 222, the ratio of the first Rq and the second Rq may be about 1:0.9 to about 1:1.1.

Additionally, in the first lower surface 222, the ratio of the first Rsk and the second Rsk may be about 1:0.9 to about 1:4. Additionally, in the first lower surface 222, the ratio of the first Rsk and the second Rsk may be about 1:1 to about 1:3.5. Additionally, on the first lower surface 222, the ratio of the first Rsk and the second Rsk may be about 1:2 to about 1:3.

Additionally, in the first lower surface 222, the ratio of the first Rku and the second Rku may be about 1:0.7 to about 1:1.3. Additionally, in the first lower surface 222, the ratio of the first Rku and the second Rku may be about 1:0.9 to about 1:1.5. Additionally, in the first lower surface 222, the ratio of the first Rku and the second Rku may be about 1:0.9 to about 1:1.3.

The first lower surface 222 may have an illumination intensity as described above. Additionally, the first lower surface 222 may have surface characteristics with little variation depending on the direction, as described above. That is, the first lower surface 222 may have surface characteristics close to isotropic as a whole.

Accordingly, the upper electrode 220 according to the embodiment can suppress the generation of residual oil process by-products. That is, the upper electrode 220 according to the embodiment can prevent adsorption of the residual oil process by-products.

Accordingly, the upper electrode 220 according to the embodiment can prevent defects such as scratches or chatter marks during a process for manufacturing a semiconductor device.

The focus ring 230 according to the embodiment may be a component used in a manufacturing device for manufacturing a semiconductor device. That is, the focus ring 230 may be a component that forms part of the semiconductor device manufacturing apparatus.

The focus ring 230 may be a component used in a plasma processing device for manufacturing semiconductor devices. The focus ring 230 may be a component used in a plasma etching device for selectively etching the semiconductor substrate 30. The semiconductor substrate 30 may be plasma treated to include a semiconductor wafer for manufacturing semiconductor devices.

The focus ring 230 guides plasma and may be a part of a lower electrode assembly for supporting the semiconductor substrate 30. The focus ring 230 may be an edge ring disposed at the edge of the lower electrode assembly.

Additionally, the focus ring 230 may be a component that forms part of an assembly that accommodates the semiconductor substrate 30 and defines the plasma region 114.

Figure 4 is a perspective view showing the focus ring 230. FIG. 5 is a cross-sectional view showing a cross section of the focus ring 230.

Referring to FIGS. 4 and 5 , the focus ring 230 according to the embodiment may have an overall ring shape.

The focus ring 230 includes a body portion 237, an inclined portion 238, and a guide portion 239. The body portion 237 may extend along the periphery of the semiconductor substrate 30 . The body portion 237 may be disposed along the periphery of the semiconductor substrate 30 . The body portion 237 may have a ring shape.

The inclined portion 238 extends from the body portion 237. The inclined portion 238 may extend inward from the body portion 237. The inclined portion 238 may extend from the body portion 237 toward the center of the semiconductor substrate 30 . The inclined portion 238 may have a ring shape. That is, the inclined portion 238 may be disposed on the inner peripheral surface of the body portion 237.

The guide portion 239 extends from the inclined portion 238. The guide portion 239 may extend inward from the inclined portion 238. The guide portion 239 may extend from the inclined portion 238 toward the center of the semiconductor substrate 30 . The guide portion 239 may have a ring shape. At least a portion of the guide portion 239 may be disposed below the semiconductor substrate 30 .

The body portion 237, the inclined portion 238, and the guide portion 239 may be formed as one body. That is, the body portion 237, the inclined portion 238, and the guide portion 239 may not have a combined structure but may have an integrated structure. The body portion 237, the inclined portion 238, and the guide portion 239 may be formed integrally with a silicon single crystal.

The focus ring 230 includes a second upper surface 231, a second lower surface 232, and a second side surface 233.

The second upper surface 231 and the second lower surface 232 face each other.

The second upper surface 231 may be included in the body portion 237.

The second lower surface 232 may be entirely flat.

The second side surface 233 extends from the second upper surface 231 to the second lower surface 232. The second side 233 may be an outer peripheral surface of the focus ring 230.

Additionally, the focus ring 230 includes a second inclined surface 234. The second inclined surface 234 may extend downward from the second upper surface 231. The second inclined surface 234 may laterally guide the product after the plasma process generated from the semiconductor substrate 30. That is, the second inclined surface 234 guides process by-products generated by the plasma injected into the semiconductor substrate 30 to the outside, thereby improving the efficiency of the semiconductor device manufacturing process. Additionally, the second inclined surface 234 appropriately guides by-products, so that the focus ring 230 can prevent other components from being contaminated by the plasma.

Additionally, the focus ring 230 may further include a guide surface 235. The guide surface 235 extends from the second inclined surface 234. The guide surface 235 may extend inward from the second inclined surface 234. The guide surface 235 may extend below the semiconductor substrate 30 . The guide surface 235 may extend from the second inclined surface 234 to the center of the semiconductor substrate 30 . At least a portion of the guide surface 235 may be disposed below the semiconductor substrate 30 .

Additionally, the focus ring 230 may further include a third side 241. The third side 241 may extend from the guide surface 235 to the second lower surface 232. The third side 241 may be an inner peripheral surface of the focus ring 230.

Additionally, the focus ring 230 may further include a fastening groove (not shown) for fastening with other components.

The focus ring 230 includes a silicon single crystal. The focus ring 230 may include the silicon single crystal as its main component. The focus ring 230 may include the silicon single crystal in an amount of about 90 wt% or more. The focus ring 230 may include the silicon single crystal in an amount of about 95 wt% or more. The focus ring 230 may include the silicon single crystal in an amount of about 99 wt% or more. The focus ring 230 may be substantially made of the silicon single crystal.

The upper electrode 220 and the focus ring 230 according to the embodiment can be manufactured by the following process.

First, raw materials for manufacturing the upper electrode 220 and the focus ring 230 are prepared.

The raw material may be silicon. The silicon may have high purity. The silicon may have a purity greater than about 99.999999%.

The raw material may include a dopant. The dopant may include an n-type dopant such as nitrogen or phosphorus, or a p-type dopant such as boron or aluminum.

The silicon single crystal ingot may be formed by the Czochralsk (CZ) method. The Czochralsk (CZ) method is a method of growing a crystal by immersing a single crystal, a seed crystal, in a silicon melt and then slowly pulling it up.

The silicon single crystal ingot may be sliced to a thickness of about 3 mm to about 25 mm. The slicing process may be performed using a wire saw. The wire saw may include a wire and diamond particles bonded around the wire.

Accordingly, a silicon single crystal plate is manufactured through the slicing process.

Afterwards, the silicon single crystal plate undergoes a chamfering process. That is, the edges of the silicon single crystal plate are ground. Accordingly, a first chamfered surface extending from the upper surface of the single crystal plate and inclined with respect to the first upper surface 221 and a second chamfered surface extending from the lower surface of the single crystal plate and inclined with respect to the first lower surface 222 A chamfered surface may be formed.

The chamfering process may be performed using a hand grinder.

The silicon single crystal plate may undergo a grinding process.

The silicon single crystal plate is disposed between an upper surface and a lower surface, and the silicon single crystal plate moves relative to the upper and lower surfaces, so that the silicon single crystal plate can be ground.

The outer peripheral surface of the silicon single crystal plate may be processed. The outer peripheral surface processing may be performed using a second grinder.

The silicon single crystal plate that has undergone the outer peripheral surface processing process can be processed into a shape. The silicon single crystal plate may be processed into shape by a third grinder.

The approximate outline of the focus ring 230 and/or the upper electrode 220 may be formed by the third grinder. It may be cut by the third grinder to form an open area in the central portion. In addition, by the third grinder, approximately the first profile (P1), the second profile (P2), the third profile (P3), the fourth profile (P4), and the fifth profile (P5) A hostile appearance may be formed.

The rotation speed of the third grinder head may be about 1500 rpm to about 8000 rpm. The rotation speed of the third grinder head may be about 1700 rpm to about 7500 rpm. The rotation speed of the third grinder head may be about 1000 rpm to about 6500 rpm.

The third grinder head may have about 100 mesh to about 2000 mesh. The third grinder head may have about 500 mesh to about 2000 mesh. The third grinder head may have about 1000 mesh to about 2000 mesh.

In the shape processing process, the feed may be about 1 mm/min to about 15 mm/min. In the shape processing process, the feed may be about 2 mm/min to about 10 mm/min. In the shape processing process, the feed may be about 3 mm/min to about 8 mm/min.

Additionally, the shape processing may proceed along the circumferential direction. That is, the third grinder head may advance while rotating in the circumferential direction based on the center of the lower surface of the silicon single crystal plate. That is, the shape processing may be carried out while rotating the lower surface of the silicon single crystal plate in a spiral shape with respect to the center.

Through the shape processing, the first lower surface 222 may be formed. Additionally, through the shape processing, a fastening groove for fastening with other parts can be formed. In particular, by the shape processing, the first profile (P1), the second profile (P2), the third profile (P3), and the fourth profile (P4) are schematically formed on the first lower surface 222. An external appearance can be formed.

A through hole 226 may be formed in the silicon single crystal plate.

The through hole 226 may be formed by drilling.

The through hole 226 may be formed by electrical discharge machining.

Through the shape processing process and/or the through hole 226 forming process, a raw focus ring and/or a raw upper electrode 220 may be formed.

Since the raw upper electrode 220 is manufactured through the shape processing process described above, it may have anisotropy in surface characteristics along the radial direction and the circumferential direction. Thereafter, the anisotropic surface properties of the raw upper electrode 220 can be appropriately adjusted by a post-treatment process to be described later.

The raw focus ring and/or the raw upper electrode 220 may undergo a wrapping process.

The raw focus ring and/or the raw upper electrode 220 are disposed between an upper surface and a lower surface, and the raw focus ring and/or the raw upper electrode 220 move relative to the upper and lower surfaces. By doing so, the raw focus ring and/or the raw upper electrode 220 may be wrapped.

The raw focus ring and/or the raw upper electrode 220 may rotate relative to the upper plate and/or the lower plate at a speed of about 5 rpm to about 25 rpm.

In the wrapping process, the upper and lower plates may have a mesh size of about 800 mesh to about 1,800 mesh.

In the wrapping process, the pressure of the upper and lower plates may be about 60 psi to about 200 psi.

The raw focus ring and the raw upper electrode 220 may be surface processed by a wet etching process.

The etchant for the wet etching process may etch the surfaces of the unprocessed focus ring and the unprocessed upper electrode 220.

The etching solution may include deionized water and a base. The etching solution may be a basic etching solution.

The basic etching solution may contain a strong base such as sodium hydroxide or potassium hydroxide.

The basic etching solution may include deionized water in an amount of about 50 wt% to about 95 wt% based on the total weight.

The basic etching solution may include the base in an amount of about 5 parts by weight to about 100 parts by weight based on 100 parts by weight of the deionized water. The basic etching solution may include the base in an amount of about 10 parts by weight to about 90 parts by weight, based on 100 parts by weight of the deionized water.

Additionally, the basic etching solution may further contain alcohol. The alcohol may be at least one selected from the group consisting of ethanol, methanol, isopropyl alcohol, or butanol.

The basic etching solution may include the alcohol in an amount of about 1 part by weight to about 30 parts by weight based on 100 parts by weight of the deionized water. The basic etching solution may include the alcohol in an amount of about 2 parts by weight to about 20 parts by weight based on 100 parts by weight of the deionized water.

The basic etching solution may further include bromate or nitrate. The basic etching solution may include the bromate or nitrate in an amount of about 0.1 parts by weight to about 10 parts by weight based on 100 parts by weight of the deionized water.

The etching solution may include deionized water and acid. The etching solution may be an acidic etching solution.

The acidic etching solution may contain an acid such as sulfuric acid or hydrofluoric acid. The acidic etching solution may contain at least one of salts consisting of ammonium hydrogen fluoride, ammonium sulfate, and ammonium sulfamic acid.

The acidic etching solution may include deionized water in an amount of about 20 wt% to about 50 wt% based on the total weight.

The acidic etching solution may include the acid in an amount of about 70 parts by weight to about 200 parts by weight based on 100 parts by weight of the deionized water. The etching solution may include the acid in an amount of about 90 parts by weight to about 150 parts by weight, based on 100 parts by weight of the deionized water.

The acidic etching solution may include the ammonium hydrogen fluoride in an amount of about 15 parts by weight to about 45 parts by weight based on 100 parts by weight of the deionized water. The acidic etching solution may include ammonium hydrogen fluoride in an amount of about 17 parts by weight to about 30 parts by weight based on 100 parts by weight of deionized water.

The acidic etching solution may include ammonium sulfate in an amount of about 15 parts by weight to about 45 parts by weight based on 100 parts by weight of deionized water. The acidic etching solution may include ammonium sulfate in an amount of about 17 parts by weight to about 30 parts by weight based on 100 parts by weight of deionized water.

The acidic etching solution may include the ammonium sulfanate in an amount of about 5 parts by weight to about 20 parts by weight based on 100 parts by weight of the deionized water. The acidic etching solution may include the ammonium sulfanate in an amount of about 5 parts by weight to about 15 parts by weight based on 100 parts by weight of the deionized water.

The unprocessed focus ring and/or the unprocessed upper electrode 220 may be immersed in the etching solution to proceed with the etching process. The immersion time may be about 10 minutes to about 100 minutes. The immersion time may be about 5 minutes to about 20 minutes. The immersion time may be about 10 minutes to about 50 minutes.

Additionally, the temperature in the etching process may be about 40°C to about 95°C. The temperature in the etching process may be about 50°C to about 95°C.

Since the etching process uses the etchant of the above composition and the immersion time within the above range, the surfaces of the raw focus ring and the raw upper electrode 220 can be appropriately etched. Accordingly, the focus ring 230 according to the embodiment and the upper electrode 220 according to the embodiment may have appropriate surface characteristics.

The raw focus ring and/or the raw upper electrode 220 may be surface treated by a polishing process.

A polishing pad may be used in the polishing process. The Shore C hardness of the polishing pad may be about 50 to about 90. The polishing pad may be a suede type or non-woven type pad.

In the polishing process, a polishing slurry can be used. The polishing slurry may include deionized water and colloidal silica.

The polishing slurry may include the colloidal silica in an amount of about 20 wt% to about 50 wt% based on the total weight. The polishing slurry may include the colloidal silica in an amount of about 30 wt% to about 45 wt% based on the total weight.

The average particle diameter of the colloidal silica may be about 20 nm to about 100 nm. The average particle diameter of the colloidal silica may be about 50 nm to about 100 nm. The average particle diameter of the colloidal silica may be about 60 nm to about 85 nm.

The pH of the polishing slurry may be about 8.5 to about 11. The pH of the polishing slurry may be about 9.0 to about 10.5.

In the polishing process, the polishing pressure may be about 200 psi to about 350 psi.

Additionally, in the polishing process, the rotation speed of the surface plate may be about 6 rpm to about 15 rpm.

Additionally, the polishing process time may be about 60 minutes to about 75 minutes.

The focus ring and upper electrode 220 that have gone through the polishing process are cleaned with a cleaning liquid.

The cleaning solution may include deionized water, hydrogen peroxide, and ammonia.

The cleaning liquid may include deionized water in an amount of about 90 wt% to about 97 wt% based on the total weight.

The cleaning liquid may include hydrogen peroxide in an amount of about 1 part by weight to about 10 parts by weight based on 100 parts by weight of deionized water. The cleaning liquid may include hydrogen peroxide in an amount of about 1 part by weight to about 7 parts by weight based on 100 parts by weight of deionized water.

The cleaning liquid may include ammonia in an amount of about 1 part by weight to about 8 parts by weight based on 100 parts by weight of the deionized water. The cleaning liquid may contain ammonia in an amount of about 1 part by weight to about 5 parts by weight based on 100 parts by weight of the deionized water.

The focus ring 230 and the upper electrode 220 are immersed in the cleaning solution for about 20 to about 30 minutes.

Additionally, the cleaning process may be performed by spraying the cleaning liquid onto the focus ring 230 and/or the upper electrode 220.

Additionally, the cleaning liquid may be sprayed inside the through hole 226, and the inside of the through hole 226 may be cleaned.

Thereafter, the focus ring 230 and/or the upper electrode 220 may be final cleaned with deionized water.

As described above, the upper electrode 220 can be manufactured through an appropriate shape processing process, an appropriate etching process, an appropriate polishing process, and an appropriate wrapping process. Accordingly, the upper electrode 220 may include a lower surface having desired first to fifth profiles (P1, P2, P3, P4, and P5).

In particular, by the appropriate manufacturing process as described above, the deviation of the third thickness change rate and the deviation of the fifth thickness change rate can be reduced.

Accordingly, the component for the semiconductor device manufacturing device according to the embodiment can improve plasma uniformity. Accordingly, the components for the semiconductor device manufacturing device according to the embodiment can minimize defects generated during the manufacturing process of the semiconductor substrate 30.

FIG. 6 is a diagram illustrating a semiconductor device manufacturing apparatus according to an embodiment. Figure 7 is a cross-sectional view showing the plasma region 114 confinement assembly 20.

Referring to FIGS. 6 and 7 , the semiconductor device manufacturing apparatus according to the embodiment includes a plasma reactor 102 having a plasma processing chamber 104 therein. Additionally, the semiconductor device manufacturing apparatus according to the embodiment may further include an assembly 20 defining the plasma region 114 disposed within the plasma processing chamber 104. The plasma processing chamber 104 may be substantially identical to the plasma region 114 confinement assembly 20 .

Additionally, the semiconductor device manufacturing apparatus according to the embodiment includes a matching network 108. The semiconductor device manufacturing apparatus according to the embodiment includes a plasma power supply unit 106 tuned by the matching network 108. The plasma power supply unit 106 provides inductively coupled power to the plasma reactor 102. Accordingly, plasma may be generated within the assembly 20 defined in the plasma region 114. In more detail, the plasma power supply unit 106 supplies power to the TCP coil 110 located near the power window 112 so that the plasma is generated. The TCP coil 110 may be configured to generate the plasma with a uniform diffusion profile within the plasma region 114 confined assembly 20 . For example, the TCP coil 110 can be configured to create a toroidal power distribution within the plasma confinement assembly.

The power window 112 may space the TCP coil from the plasma processing chamber 104 at a certain interval. Additionally, the TCP coil 110 may supply the energy to the plasma processing chamber 104 while being spaced apart from the plasma processing chamber 104 .

The semiconductor device manufacturing apparatus according to the embodiment may further include a bias voltage power supply unit 116 tuned by the matching network 118.

The bias voltage power supply unit 116 may set a bias voltage to the semiconductor substrate 30 through the electrostatic chuck 270. That is, the bias voltage power supply unit 116 may supply power to set a bias voltage to the semiconductor substrate 30 .

The semiconductor device manufacturing apparatus according to the embodiment may further include a control unit 124. The control unit 124 may control the operation of the plasma power supply unit 106, the gas source supply unit 130, and the bias voltage power supply unit 116.

The plasma power supply 106 and the bias voltage power supply 116 may be configured to operate at a specific radio frequency, for example, about 13.56 MHz, 27 MHz, 2 MHz, 60 MHz, 400 kHz, 2.54 GHz, or combinations thereof. It can also be configured to operate with .

The plasma power supply unit 106 and the bias voltage power supply unit 116 may adjust the intensity of supplied power to achieve target process performance. For example, the plasma power supply unit 106 may supply power in the range of about 50 W to about 5000 W. The bias voltage power supply unit 116 may supply a bias voltage within the range of about 20V to about 2000V.

Additionally, the semiconductor device manufacturing apparatus according to the embodiment may further include the gas source supply unit 130. The gas source supply unit 130 may be fluidly connected to the plasma region 114 defining assembly 20 through a gas inlet such as a gas injector 140.

Additionally, the semiconductor device manufacturing apparatus according to the embodiment may include a pressure control valve 142 and a pump 144 that serve to maintain a specific pressure within the plasma processing chamber 104. By-products, etc. are removed from the plasma process confinement chamber 104 by the pressure control valve 142 and the pump. The pressure control valve 142 can maintain the process pressure below 1 Torr during processing.

As shown in FIG. 6, the plasma region 114 limiting assembly 20 includes a cover portion 210, the upper electrode 220, the focus ring 230, a first insulating ring 250, and a second insulating ring 250. It includes an insulating ring 240, a third insulating ring 260, and the electrostatic chuck 270.

The cover part 210 is disposed outside the plasma area 114. The cover portion 210 may extend along the outer portion of the plasma region 114. The cover part 210 may be arranged along the periphery of the plasma area 114.

The cover part 210 may support the upper electrode 220. The cover part 210 may be fastened to the upper electrode 220. Additionally, the cover part 210 may be fastened to the second insulating ring 240. Additionally, the cover part 210 may be fastened to the third insulating ring 260. The cover part 210 may support the third insulating ring 260.

The cover portion 210 may include silicon. The cover part 210 may be made of silicon. The cover portion 210 may include polysilicon or silicon single crystal. The cover part 210 may be made of polysilicon.

The cover part 210 may include a discharge part 280 through which process by-products generated in the plasma region 114 are discharged. The discharge unit 280 may be connected to the plasma region 114.

The upper electrode 220 and the focus ring 230 may have the characteristics described above.

The upper electrode 220 may be seated on the cover portion 210. The upper electrode 220 may be seated on the cover portion 210. The upper electrode 220 may be fastened to the cover portion 210. The upper electrode 220 may be coupled to the cover portion 210.

The upper electrode 220 is disposed on the plasma region 114. The upper electrode 220 may entirely cover the upper portion of the plasma region 114 . The upper electrode 220 may face the semiconductor substrate 30 with the plasma region 114 interposed therebetween.

The focus ring 230 may extend along the periphery of the semiconductor substrate 30 . The focus ring 230 may be disposed on the electrostatic chuck 270. The focus ring 230 may extend along the outer edge of the plasma region 114. The focus ring 230 may be disposed inside the first insulating ring 250 .

The focus ring 230 may surround a portion where the semiconductor substrate 30 is disposed. The focus ring 230 may form a space 236 in which the semiconductor substrate 30 is placed. The focus ring 230 may be placed at an edge portion of the semiconductor substrate 30 .

The first insulating ring 250 surrounds the focus ring 230. The first insulating ring 250 may surround the electrostatic chuck 270 . The first insulating ring 250 may extend along the outer peripheral surface of the electrostatic chuck 270. The first insulating ring 250 may extend along the outer peripheral surface of the focus ring 230. The first insulating ring 250 may cover the outer peripheral surface of the focus ring 230 and the electrostatic chuck 270.

The first insulating ring 250 is disposed between the cover part 210 and the focus ring 230. Additionally, the first insulating ring 250 may be disposed between the cover part 210 and the electrostatic chuck 270.

Additionally, the first insulating ring 250 may have high electrical resistance. That is, the first insulating ring 250 may have high insulating properties. Accordingly, the first insulating ring 250 can insulate between the focus ring 230 and the cover part 210. Additionally, the first insulating ring 250 may insulate between the electrostatic chuck 270 and the cover part 210.

The first insulating ring 250 may include a material that has high electrical resistance and high etch resistance. The first insulating ring 250 may include quartz. The first insulating ring 250 may include fused quartz and/or synthetic quartz.

The first insulating ring 250 may be made of quartz. The first insulating ring 250 may be made of quartz with a purity of about 99.99% or more.

The second insulating ring 240 is disposed outside the first insulating ring 250. The second insulating ring 240 may surround the outer peripheral surface of the first insulating ring 250. The second insulating ring 240 may extend along the periphery of the first insulating ring 250 .

The second insulating ring 240 may reinforce the insulating properties of the first insulating ring 250. The second insulating ring 240 may insulate between the focus ring 230 and the cover part 210. Additionally, the second insulating ring 240 may insulate between the electrostatic chuck 270 and the cover part 210.

The second insulating ring 240 may include a material that has high electrical resistance and high etch resistance. The second insulating ring 240 may include quartz. The second insulating ring 240 may include fused quartz and/or synthetic quartz.

The second insulating ring 240 may be made of quartz. The second insulating ring 240 may be made of quartz with a purity of about 99.99% or more.

The third insulating ring 260 may be disposed below the cover part 210. The third insulating ring 260 may be disposed below the cover part 210. The third insulating ring 260 may be disposed outside the first insulating ring 250. The third insulating ring 260 may extend along the outer peripheral surface of the first insulating ring 250. The third insulating ring 260 may be disposed outside the electrostatic chuck 270.

The third insulating ring 260 may be disposed around the discharge portion 280. The discharge unit 280 may be an exhaust port for discharging process by-products generated in the plasma region 114.

The third insulating ring 260 may include a material that has high electrical resistance and high etch resistance. The third insulating ring 260 may include quartz. The third insulating ring 260 may include fused quartz and/or synthetic quartz.

The third insulating ring 260 may be made of quartz. The third insulating ring 260 may be made of quartz with a purity of about 99.99% or more.

The semiconductor device manufacturing apparatus according to the embodiment can plasma process the semiconductor substrate 30. The semiconductor device manufacturing apparatus according to the embodiment can manufacture a semiconductor device by plasma processing the semiconductor substrate 30.

The semiconductor substrate 30 may include a wafer, an etch target layer disposed on the wafer, and a mask pattern disposed on the etch target layer.

The etching target layer may be a conductive layer including a metal layer. The etching target layer may be a dielectric layer including an oxide film.

The mask pattern may selectively expose the etch target layer. The mask pattern may include a photoresist layer. The photoresist layer may be patterned by light.

In order for the semiconductor substrate 30 to be plasma processed, the semiconductor substrate 30 is placed on the electrostatic chuck 270 . Additionally, the semiconductor substrate 30 may be placed within the focus ring 230 . The semiconductor substrate 30 may be placed on the guide portion 239.

Afterwards, plasma is sprayed onto the semiconductor substrate 30. The plasma is sprayed onto the semiconductor substrate 30 through the upper electrode 220. The plasma may be formed by a gas source.

The gas source may include hydrogen gas (H ₂ ), nitrogen gas (N ₂ ), and fluorine-based gas. The fluorine-based gas may include hydrogen fluoride or fluorinated carbon (CH _x F _4-x , x is an integer of 1 to 3).

The flow ratio of the hydrogen gas and the nitrogen gas may be about 3:1 to about 7:1. Additionally, the flow ratio of the hydrogen and the fluorine-based gas may be about 10:1 to about 100:1.

The etch target layer may be selectively etched by the plasma. Accordingly, a conductive pattern or an insulating pattern may be formed on the wafer.

Since the focus ring 230 and the upper electrode 220 have the above-mentioned characteristics, the semiconductor device manufacturing apparatus according to the embodiment can prevent defects generated during the manufacturing process of the semiconductor substrate 30.

In particular, because the upper electrode 220 has the above-mentioned characteristics, the straight-line propagation of plasma can be improved. Accordingly, the semiconductor device manufacturing apparatus according to the embodiment can improve etch uniformity.

Accordingly, the components for the semiconductor device manufacturing device according to the embodiment can prevent external and internal contamination and prevent the contaminants from transferring into the chamber of the semiconductor device manufacturing device. Accordingly, the components for the semiconductor device manufacturing device according to the embodiment can minimize defects generated in the semiconductor substrate manufacturing process.

Additionally, the surface of the component for the semiconductor device manufacturing device according to the embodiment includes appropriate dopant peaks. Accordingly, the component for the semiconductor device manufacturing device according to the embodiment has appropriate electrical properties and can minimize defects caused by the dopant.

Additionally, the component for the semiconductor device manufacturing device according to the embodiment has a surface having a low body-centered-cubic ratio and a low rhizome ratio. Accordingly, the frequency of crystal defects on the surface of the component for the semiconductor device manufacturing device according to the embodiment may be low.

Accordingly, in the component for the semiconductor device manufacturing device according to the embodiment, excessive wear caused by the crystal defect can be prevented during a process for manufacturing a semiconductor substrate. Accordingly, the components for the semiconductor device manufacturing device according to the embodiment can suppress the generation of particles in the process chamber due to excessive wear. Accordingly, the components for the semiconductor device manufacturing device according to the embodiment can prevent defects generated during the manufacturing process of the semiconductor substrate. Additionally, because the excessive wear is suppressed, the components for the semiconductor device manufacturing device according to the embodiment can have improved durability.

Additionally, the upper electrode 220 may be omitted in the semiconductor device manufacturing apparatus according to the embodiment. That is, the semiconductor device manufacturing apparatus in which the focus ring 230 is omitted can later be equipped with the upper electrode 220 separately. The semiconductor device manufacturing apparatus according to the embodiment may omit the upper electrode 220 and install it later. That is, the semiconductor device manufacturing apparatus according to the embodiment may be optimized and configured so that the upper electrode 220 can be mounted.

Additionally, the features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, etc. illustrated in each embodiment can be combined or modified and implemented in other embodiments by a person with ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

Although the above description focuses on the examples, this is only an example and does not limit the present invention, and those skilled in the art will be able to You will see that various variations and applications are possible. For example, each component specifically shown in the examples can be modified and implemented. And these variations and differences in application should be construed as being included in the scope of the present invention as defined in the appended claims.

Manufacturing Example 1

By the Czochralski method, a silicon ingot with a diameter of approximately 330 mm was produced. The silicon ingot was cut with a diamond wire saw to produce a silicon single crystal plate with a thickness of approximately 20 mm. Afterwards, the edges of the silicon single crystal plate were cut to form a chamfered surface.

Thereafter, the silicon single crystal plate on which the chamfering process has been performed is placed between the upper and lower plates, and is wrapped by the upper and lower plates. Thereafter, the wrapped silicon single crystal plate is processed into shape by a grinder. Accordingly, a raw upper electrode is formed.

The shape processing process was carried out under the following conditions.

1) Grinder head: 800 mesh

2) Grinder rotation speed: 6000 rpm

3) Feed: 0.7 mm/min

In particular, the shape processing process gradually progressed spirally outward from the center of the silicon single crystal plate.

Afterwards, a drill with a diameter of approximately 0.5 mm was used to form a plurality of through holes in the vertical direction of the silicon single crystal plate at intervals of approximately 5 cm.

Thereafter, the raw upper electrode was immersed in an etchant at a temperature of about 80° C. for about 20 minutes, so that the outer surface of the raw upper electrode was treated, and the upper electrode was manufactured.

The components of the etching solution are as follows.

1) Deionized water: 77 parts by weight

2) Potassium hydroxide: 20 parts by weight

3) Isopropyl alcohol: 3 parts by weight

The lower surface of the upper electrode has a first profile (radius from 0 to 8.5 mm), a second profile (radius from 8.5 mm to 12.3 mm), a third profile (radius from 12.3 mm to 57.4 mm), and a fourth profile (radius from 57.4 mm). mm to 88.4 mm) and a fifth profile (radius from 88.4 mm to 100 mm). Additionally, the thickness at the center of the upper electrode was approximately 17.1 mm, and the thickness at the outermost edge of the upper electrode was approximately 9.3 mm.

The thickness change rate at the center of the first profile was 0, and the thickness change rate at a radius of 8 mm was -0.081. Additionally, the thickness change rate continued to decrease from the center of the first profile to a radius of 8 mm.

Additionally, the thickness change rate at a radius of 12.5 mm was approximately -0.113. In the second profile, the rate of thickness change continued to decrease.

Additionally, the thickness change rate at a radius of 58 mm was approximately -0.113. In the third profile, the rate of change in thickness was constant. In the third profile, the thickness change rate deviation was less than 0.003.

Additionally, the thickness change rate at a radius of 88 mm was approximately 0. In the fourth profile, the thickness change rate continued to increase.

Additionally, the thickness change rate at a radius of 100 mm was approximately 0. In the fifth profile, the rate of change in thickness was constant. In the fifth profile, the thickness change rate deviation was less than 0.003.

Preparation Examples 2 to 5

As shown in Table 1 below, processing conditions and etching times were adjusted. For the remaining process, Preparation Example 1 was referred to except for the changed parts.

division grinder head
(mesh) Grinder rotation speed
(rpm) feed
(mm/min) etching time
(minute) Manufacturing Example 1 800 6000 0.7 20 Production example 2 800 5500 0.618 18 Production example 3 800 6000 0.6 15 Production example 4 800 5500 0.7 20 Production example 5 800 6500 0.5 25

Examples 1 to 5

As shown in Table 2 below, an upper electrode is mounted on a wafer etching device, and a silicon wafer is placed on the etching device. Afterwards, hydrogen gas, nitrogen gas, and CH ₃ F were sprayed onto the upper electrode at a flow ratio of about 5:1:0.5, turned into plasma, and sprayed on the silicon wafer for about 10 minutes to proceed with the etching process.

division upper electrode Example 1 Manufacturing Example 1 Example 2 Production example 2 Example 3 Production example 3 Example 4 Production example 4 Example 5 Production example 5

Evaluation example

1. Thickness change rate

The thickness of the upper electrode was measured in the radial direction with a measurement interval of 0.3 mm radius using a contact 3D measuring device (manufacturer: MITUTOYO, product name: CRYSTA-APEC C9166).

2. Surface roughness

Using a digital optical microscope (Keyence's VHX-7000), images were taken at about 500 times at about five random positions, and the surface roughness was measured. The first surface roughness was measured along a straight line of approximately 200 μm in the radial direction. Additionally, the second surface roughness was measured along a straight line of approximately 200 μm in the circumferential direction. The average value of the surface roughnesses measured in this way was derived.

3. Etching deviation

In the etched silicon wafer, the first etch thickness etched from the center and the second etch thickness etched from the outside were measured. The deviation between the first etch thickness and the second etch thickness was determined. The difference between the first etch thickness and the second etch thickness is a value obtained by dividing the difference between the first etch thickness and the second etch thickness by the first etch thickness.

Deviation between the first etch thickness and the second etch thickness is less than 0.1: good

Deviation of 0.1 or more between the first etch thickness and the second etch thickness: defective

4. Defect evaluation

The number of defects in the etched silicon wafer was measured using a wafer surface analyzer (WM-3000, Zeus).

Number of defects 10 or less: Good, O

Number of defects 11 or more: defective,

As shown in Table 3 below, the first surface roughness of the lower surface of the upper electrode was measured.

division Rz
(㎛) Rp
(㎛) RV
(㎛) Rc
(㎛) RT
(㎛) Rq
(㎛) Rsk Rku RSm
(㎛) Example 1 4.88 2.42 2.45 3.17 4.87 1.13 0.15 2.58 63.1 Example 2 4.65 2.34 2.37 3.06 4.65 1.35 0.19 2.36 64.5 Example 3 4.39 2.56 2.52 3.20 4.59 1.31 0.17 2.47 66.7 Example 4 4.51 2.16 2.36 3.16 4.75 1.24 0.17 2.58 65.9 Example 5 4.90 2.38 2.37 3.09 4.69 1.11 0.16 2.37 62.1

As shown in Table 4 below, the second surface roughness of the lower surface of the upper electrode was measured.

division Rz
(㎛) Rp
(㎛) RV
(㎛) Rc
(㎛) RT
(㎛) Rq
(㎛) Rsk Rku RSm
(㎛) Example 1 4.93 2.62 2.30 3.04 4.93 1.14 0.48 2.76 62.8 Example 2 4.95 2.59 2.37 3.01 4.87 1.12 0.45 2.75 63.5 Example 3 4.85 2.78 2.41 2.95 4.96 1.05 0.42 2.73 65.1 Example 4 4.89 2.39 2.23 3.14 4.83 1.23 0.48 2.37 67.5 Example 5 4.78 2.46 2.28 3.16 4.82 1.24 0.47 2.65 61.3

As shown in Table 5 below, Examples 1 to 5 had a low number of defects and low residue content.

division flaw etch deviation Example 1 O O Example 2 O O Example 3 O O Example 4 O O Example 5 O O

As shown in Table 6, the semiconductor device manufacturing method according to the embodiment has low defects and etch deviation.

Cover part (210)
Upper electrode (220)
Focus Ring(230)
First insulating ring (250)
Second insulating ring (240)
Third insulating ring (260)
Electrostatic Chuck(270)

Claims (12)

Flat top surface; and
Opposite the upper surface and comprising a lower surface including a curved surface,
The lower surface includes a first Rz and a second Rz,
The first Rz is measured in the radial direction from the center of the lower surface,
The second Rz is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3. According to claim 1,
The first Rz is 2㎛ to 8㎛, and the second Rz is 2㎛ to 8㎛. According to claim 1,
The lower surface includes a first Rp and a second Rp,
The first Rp is measured in the radial direction from the center of the lower surface,
The second Rp is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rp and the second Rp is 1:0.7 to 1:1.3. The upper electrode of claim 3, wherein the first Rp is 1㎛ to 4㎛, and the second Rp is 1㎛ to 4㎛. According to claim 1,
The lower surface includes a first Rv and a second Rv,
The first Rv is measured in a radial direction from the center of the lower surface,
The second Rv is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rv and the second Rv is 1:0.7 to 1:1.3. The upper electrode of claim 5, wherein the first Rv is 1㎛ to 4㎛, and the second Rv is 1㎛ to 4㎛. According to claim 1,
The lower surface includes a first Rq and a second Rq,
The first Rq is measured in the radial direction from the center of the lower surface,
The second Rq is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rq and the second Rq is 1:0.7 to 1:1.3. According to claim 1,
The lower surface includes a first Rsk and a second Rsk,
The first Rsk is measured in the radial direction from the center of the lower surface,
The second Rsk is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rsk and the second Rsk is 1:0.9 to 1:4. According to claim 1,
The lower surface includes a first Rku and a second Rku,
The first Rku is measured radially from the center of the lower surface,
The second Rku is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rku and the second Rku is 1:0.9 to 1:1.5. According to claim 1,
The lower surface includes a first Rsm and a second Rsm,
The first Rsm is measured radially from the center of the lower surface,
The second Rsm is measured in a circumferential direction perpendicular to the radial direction,
An upper electrode wherein the ratio of the first Rsm and the second Rsm is 1:0.7 to 1:1.3. an upper electrode facing the semiconductor substrate and spraying a process gas;
a support portion supporting the semiconductor substrate and disposed below the semiconductor substrate; and
Surrounding the semiconductor substrate and including a focus ring provided on the support portion,
The upper electrode has a flat upper surface; And a lower surface facing the upper surface and including a curved surface,
The lower surface includes a first Rz and a second Rz,
The first Rz is measured in the radial direction from the center of the lower surface,
The second Rz is measured in a circumferential direction perpendicular to the radial direction,
A semiconductor device manufacturing apparatus wherein the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3. Placing a semiconductor substrate in a semiconductor device manufacturing apparatus; and
Processing the semiconductor substrate; including,
The semiconductor device manufacturing device is
an upper electrode facing the semiconductor substrate and spraying a process gas;
a support portion supporting the semiconductor substrate and disposed below the semiconductor substrate; and
Surrounding the semiconductor substrate and including a focus ring provided on the support portion,
The upper electrode has a flat upper surface; And a lower surface facing the upper surface and including a curved surface,
The lower surface includes a first Rz and a second Rz,
The first Rz is measured in the radial direction from the center of the lower surface,
The second Rz is measured in a circumferential direction perpendicular to the radial direction,
A method of manufacturing a semiconductor device wherein the ratio of the first Rz and the second Rz is 1:0.7 to 1:1.3.

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