KR102654894B1 - 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들 - Google Patents

펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들 Download PDF

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Publication number
KR102654894B1
KR102654894B1 KR1020207012048A KR20207012048A KR102654894B1 KR 102654894 B1 KR102654894 B1 KR 102654894B1 KR 1020207012048 A KR1020207012048 A KR 1020207012048A KR 20207012048 A KR20207012048 A KR 20207012048A KR 102654894 B1 KR102654894 B1 KR 102654894B1
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injector assemblies
valve
injector
valves
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Korean (ko)
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KR20200049877A (ko
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마리우츠 그레고르
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램 리써치 코포레이션
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    • H01L21/67276—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
    • B05B1/1421—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening the multiple outlet openings arranged in plural groups or rows
    • B05B1/1423—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening the multiple outlet openings arranged in plural groups or rows comprising concentric or coaxial groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/30—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to control volume of flow, e.g. with adjustable passages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/67017—
    • H01L21/67248—
    • H01L21/67253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Pulse Circuits (AREA)
  • Radar Systems Or Details Thereof (AREA)
KR1020207012048A 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들 Active KR102654894B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247010982A KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762563129P 2017-09-26 2017-09-26
US62/563,129 2017-09-26
US201762590815P 2017-11-27 2017-11-27
US62/590,815 2017-11-27
PCT/US2018/052246 WO2019067323A1 (en) 2017-09-26 2018-09-21 DOSE CONTROL SYSTEMS AND METHODS MODULATED BY TIME PULSES

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020247010982A Division KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Publications (2)

Publication Number Publication Date
KR20200049877A KR20200049877A (ko) 2020-05-08
KR102654894B1 true KR102654894B1 (ko) 2024-04-03

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Application Number Title Priority Date Filing Date
KR1020207012048A Active KR102654894B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
KR1020257030846A Active KR102994497B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
KR1020247010982A Active KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020257030846A Active KR102994497B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들
KR1020247010982A Active KR102861934B1 (ko) 2017-09-26 2018-09-21 펄스 폭 조정된 도즈 제어를 위한 시스템들 및 방법들

Country Status (8)

Country Link
US (4) US11542598B2 (enExample)
EP (3) EP4235743B1 (enExample)
JP (2) JP7421482B2 (enExample)
KR (3) KR102654894B1 (enExample)
CN (2) CN120854322A (enExample)
SG (1) SG11202002686YA (enExample)
TW (3) TWI829651B (enExample)
WO (1) WO2019067323A1 (enExample)

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WO2019067323A1 (en) 2017-09-26 2019-04-04 Lam Research Corporation DOSE CONTROL SYSTEMS AND METHODS MODULATED BY TIME PULSES
EP4367713A4 (en) * 2021-07-07 2026-02-18 Inficon Inc UPSTREAM PROCESSING MONITORING FOR DEPOSIT AND ENGRAVING ROOMS
US20240203695A1 (en) * 2022-12-16 2024-06-20 Applied Materials, Inc. Fast gas switching
KR20250148210A (ko) 2024-04-05 2025-10-14 주식회사 엘지에너지솔루션 배터리 팩 및 이를 포함하는 자동차

Citations (2)

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WO2017160614A1 (en) 2016-03-15 2017-09-21 Applied Materials, Inc Methods and assemblies for gas flow ratio control

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US20120156363A1 (en) 2010-12-17 2012-06-21 Veeco Instruments Inc. Gas Injection System for Chemical Vapor Deposition Using Sequenced Valves
WO2017160614A1 (en) 2016-03-15 2017-09-21 Applied Materials, Inc Methods and assemblies for gas flow ratio control

Also Published As

Publication number Publication date
JP2024038344A (ja) 2024-03-19
US20230160065A1 (en) 2023-05-25
EP4391011A2 (en) 2024-06-26
JP7754960B2 (ja) 2025-10-15
JP2020535666A (ja) 2020-12-03
TW202427648A (zh) 2024-07-01
US20240093365A1 (en) 2024-03-21
EP4235743A2 (en) 2023-08-30
TW201923930A (zh) 2019-06-16
TWI829651B (zh) 2024-01-21
CN120854322A (zh) 2025-10-28
CN111164743A (zh) 2020-05-15
TW202527184A (zh) 2025-07-01
EP4391011A3 (en) 2024-11-06
SG11202002686YA (en) 2020-04-29
EP3688794A1 (en) 2020-08-05
EP4235743A3 (en) 2023-11-08
CN111164743B (zh) 2025-06-17
US11834736B2 (en) 2023-12-05
US20200270748A1 (en) 2020-08-27
JP7421482B2 (ja) 2024-01-24
EP3688794A4 (en) 2021-07-07
US12215421B2 (en) 2025-02-04
EP4235743B1 (en) 2025-03-12
TWI907178B (zh) 2025-12-01
WO2019067323A1 (en) 2019-04-04
US11542598B2 (en) 2023-01-03
TWI869129B (zh) 2025-01-01
KR20250139892A (ko) 2025-09-23
US20250179634A1 (en) 2025-06-05
KR20240046651A (ko) 2024-04-09
EP3688794B1 (en) 2023-06-28
KR102994497B1 (ko) 2026-07-22
KR102861934B1 (ko) 2025-09-18
KR20200049877A (ko) 2020-05-08

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