KR102649397B1 - Linear Deposition Source - Google Patents

Abstract

In this embodiment, a deposition space accommodating the deposition material is formed and a crucible long in the left and right directions; A heater that heats the crucible around the outside of the crucible; It is disposed on the upper part of the crucible, covers the deposition space, and includes a nozzle block with a plurality of main nozzles protruding, the plurality of main nozzles including a left nozzle, a central nozzle, and a right nozzle, and at the discharge surface of the left nozzle. The extended virtual line points toward the upper right of the left nozzle, the virtual line extending from the discharge surface of the right nozzle points toward the upper left of the right nozzle, the virtual line extending from the discharge surface of the left nozzle, and the discharge surface of the right nozzle Each imaginary line extending from a surface may be closer to a vertical line than to a horizontal line.

Description

Linear Deposition Source}

The present invention relates to a linear evaporation source, and more specifically, to a deposition apparatus for depositing a deposition material as a deposited object.

Deposition is a method of coating gaseous particles as a thin solid film on the surface of an object such as metal or glass.

Recently, as the use of OLED (Organic Light Emitting Diodes) displays has increased in electronic devices such as TVs and mobile phones, research on devices and processes for manufacturing OLED display panels has been active. In particular, the OLED display panel manufacturing process includes a process of depositing organic materials on a substrate such as a glass substrate in a vacuum.

Specifically, the deposition process is a process of heating a crucible containing organic/inorganic materials to evaporate the organic/inorganic materials into a gaseous state, and a process in which the organic materials in the gaseous state pass through a nozzle and are deposited on the substrate. Includes.

At this time, in order to secure excellent thin film properties, the gaseous organic material must be deposited uniformly on the substrate. Therefore, it is desirable for the deposition apparatus to uniformly supply the gaseous organic material through a plurality of nozzles, and the gaseous organic material that has passed through the plurality of nozzles must be uniformly guided to each area of the substrate.

Recently, the precision of the deposition process has been increased, making it possible to provide, for example, smaller and smaller pixel sizes. In some processes, masks are used to define pixels as evaporated material passes through mask openings. However, the shadowing effects of the mask make it difficult to increase the predictability and precision of the evaporation process.

Republic of Korea Patent Publication No. 10-2058612 (announced on December 23, 2019) discloses an evaporation source for depositing evaporated material, the evaporation source comprising one or more distribution pipes having a plurality of nozzles, and a plurality of Each nozzle of the nozzles is configured to direct a plume of evaporated source material toward the substrate, and includes a shielding device including a plurality of openings, wherein at least one opening of the plurality of openings is configured to direct a plume of evaporated source material toward the substrate, wherein at least one opening of the plurality of openings is configured to direct a plume of evaporated source material toward the substrate. It is configured to shape a plume of ejected vaporized ignition material.

Republic of Korea Patent Publication No. 10-2058612 (announced on December 23, 2019)

The purpose of the present invention is to provide a deposition device that can minimize mask shadow defects.

The deposition apparatus according to this embodiment includes a crucible in which a deposition space for receiving the deposition material is formed and is long in the left and right directions; A heater that heats the crucible around the outside of the crucible; And it may include a nozzle block disposed on the upper part of the crucible, covering the deposition space, and having a plurality of main nozzles protruding.

The plurality of main nozzles may include a left nozzle, a central nozzle, and a right nozzle.

An imaginary line extending from the discharge surface of the left nozzle may point toward the upper right side of the left nozzle.

An imaginary line extending from the discharge surface of the right nozzle may be directed toward the upper left side of the right nozzle.

The virtual line extending from the discharge surface of the left nozzle and the virtual line extending from the discharge surface of the right nozzle may each be closer to a vertical line than a horizontal line.

The nozzle block may include a nozzle plate on which the plurality of main nozzles protrude.

The virtual line may have an inclination angle of more than 50° and less than 80° with the nozzle plate 81.

The deposition device includes auxiliary nozzles inserted into only some of the plurality of main nozzles; And it may further include a mask disposed between the nozzle block and the substrate.

A plurality of auxiliary nozzles may be provided, and the plurality of main nozzles may include a first main nozzle into which an auxiliary nozzle is inserted and a second main nozzle into which an auxiliary nozzle is inserted.

The top of the auxiliary nozzle is exposed to the outside of the second main nozzle, the top height of the auxiliary nozzle is higher than the top height of the second main nozzle, and the entrance and exit surfaces of the auxiliary nozzle are not parallel.

The first angle between the outlet surface and the horizontal plane may be greater than the second angle between the inlet surface and the horizontal plane.

The exit surface of the auxiliary nozzle may be closer to vertical than the exit surface of the second main nozzle.

The second main nozzle may be closer to the end of the nozzle block.

The number of second main nozzles may be less than the number of first main nozzles.

An auxiliary nozzle seating portion on which an auxiliary nozzle is mounted may protrude from the inner lower portion of the second main nozzle.

The upper surface of the auxiliary nozzle seating portion may be inclined.

A through hole may be formed inside the auxiliary nozzle seating portion to guide the vaporized deposition material to the auxiliary nozzle.

According to this embodiment, scattering of the deposition material in the reverse direction of the left nozzle is minimized and scattering in the reverse direction of the right nozzle is minimized, thereby creating a shadow effect in the openings of the mask that are far from the left and right nozzles. It can be minimized and the precision of the deposition process can be increased.

Additionally, when inserting the auxiliary nozzle, the auxiliary nozzle is seated on the auxiliary nozzle seating portion, so that the auxiliary nozzle is not over-inserted and the height of the auxiliary nozzle can be maintained.

In addition, replacement of the nozzle convexity or tuning of the main nozzle formed on the nozzle convex can be minimized, resulting in high mass production.

1 is a longitudinal cross-sectional view showing a deposition apparatus according to an embodiment of the present invention;
2 is a diagram showing a linear evaporation source of the deposition apparatus of this embodiment;
3 is a diagram showing the main nozzle of the comparative example and the main nozzle of the present embodiment;
Figure 4 is a perspective view of auxiliary nozzles arranged in the nozzle block of this embodiment;
Figure 5 is a partially cut away perspective view showing the nozzle block and auxiliary nozzle of this embodiment;
Figure 6 is an enlarged cross-sectional view showing the nozzle block and auxiliary nozzle of this embodiment.
Figure 7 is a diagram showing an example in which the auxiliary nozzle of this embodiment is screwed to the main nozzle.

Hereinafter, specific embodiments of the present invention will be described in detail along with the drawings.

1 is a longitudinal cross-sectional view showing a deposition apparatus according to an embodiment of the present invention.

The deposition device may include a housing (1), a substrate support (2) and a linear evaporation source (3).

A space 11 may be formed inside the housing 1. The housing 1 may be a vacuum chamber that creates a vacuum in the space 11 when the deposition material is deposited on the substrate 21 by the linear evaporation source 3.

The substrate support 2 can be accommodated in the space 11 inside the housing 1 together with the linear evaporation source 3.

The substrate support 2 may be located on the upper side of the space 11. The substrate 21, which is a deposited object, may be supported on the substrate support 2. The substrate 21 may have a square shape.

An example of the substrate 21 may be a substrate of a display device such as OLED, and pixels may be formed on the substrate 21.

A mask 22 may be disposed between the substrate 21 and the linear evaporation source 3 so that the deposition material 42 vaporized in the linear evaporation source 3 is evenly guided to the substrate 21.

The mask 22 may be disposed between the nozzle block 8 of the linear evaporation source 3 and the substrate 21.

The mask 22 may be disposed on the lower side of the substrate 21 . An opening 23 through which the vaporized deposition material passes may be formed in the mask 22 .

A linear evaporation source 3 may be disposed within the housing 1 to vaporize the deposition material 42 on the substrate 21 .

The linear evaporation source 3 may include a crucible 4, an inner plate 5, a heater 6, a heater frame 7, and a nozzle block 8.

The crucible 4 may have a deposition space 41 formed therein. The crucible 4 may be in the shape of a container with an open top.

The deposition material 42 may be accommodated in the deposition space 41 . An example of the deposition material 42 may be an organic material.

The crucible 4 may be arranged to be spaced apart from the heater frame 7.

The upper part of the crucible 4 may be fastened to the nozzle block 8. The crucible 4 may be fixed to the lower part of the nozzle block 8. The crucible 4 may be integrated with the nozzle block 8.

The inner plate 5 may be placed in the deposition space 41 and a hole 51 may be formed. A plurality of holes 51 may be formed.

A plurality of inner plates 5 may be provided inside the crucible 4. The plurality of inner plates 5 may be spaced apart in the vertical direction (Z).

A plurality of inner plates 5 may be supported to be spaced apart from each other in the crucible 4 .

A seating groove 44 (or step portion) into which the edge portion of the inner plate 5 is seated may be formed on the inner circumference of the crucible 4. A plurality of seating grooves may be provided, and a plurality of seating grooves may be formed to be spaced apart from each other on the inner circumference of the crucible 4. A plurality of inner plates 5 may be seated on the inner circumference of the crucible 4 to be spaced apart from each other.

The heater 6 can heat the crucible 4. Heater 6 may include an electric heater. The heater 6 may surround the outer circumferential surface of the crucible 4. The heater 6 may heat the crucible 4 around the outside of the crucible 4.

The heater 6 is placed on the outside of the crucible 4 and can surround the front, rear, left, and right sides of the crucible 4.

The heater frame 7 may support the heater 6 on the outside of the crucible 4.

The heater frame 7 may include a frame 71 with the heater 6 installed inside, and a frame support 72 provided on the lower side of the frame 71 to support the frame 71.

The frame 71 may be provided with a seating pin 74 (or floating pin) on which at least one of the crucible 4 and the nozzle block 8 is seated.

The seating pin 74 may be provided to protrude from the inner circumference of the frame 71.

A seating portion 46 mounted on the seating pin 74 may be formed in the crucible 4 or the nozzle block 8. When the seating portion 46 is formed on the crucible 4, the seating portion 46 may be formed on the outer circumference of the crucible 4.

The nozzle block 8 may be placed on top of the crucible 4 to cover the deposition space 41. The nozzle block 8 may be a crucible cap placed on top of the crucible 4.

In the case of the nozzle block 8, one nozzle block 8 may be formed in one crucible 4, or two or more divided nozzle blocks 8 may be formed in one crucible 4 if necessary. It can also be formed.

The nozzle block 8 may be coupled to the top of the crucible 4. The nozzle block 8 may form a crucible assembly together with the crucible 4.

The nozzle block 8 may have a rectangular shape.

The nozzle block 8 may include a nozzle plate 81 and a main nozzle 82 provided on the nozzle plate 81.

The upper surface of the nozzle plate 81 may face the substrate 21 and the mask 22. The upper surface of the nozzle plate 81 may be parallel to the substrate 21. The upper surface of the nozzle plate 81 may be horizontal.

The main nozzle 82 may be disposed to protrude from the upper surface of the nozzle plate 81. The main nozzle 82 can be formed integrally with the nozzle plate 81. The main nozzle 82 may be manufactured separately from the nozzle plate 81 and then assembled to the nozzle plate 81 by welding or the like.

The lower surface of the nozzle block (8) may face the crucible (4).

The linear evaporation source 3 may further include a cooling block 100.

The cooling block 100 may surround the heater frame 7 on the outside of the heater frame 7. The cooling block 100 may have a space 102 formed therein. The crucible 4, the heater 6, the heater frame 7, and the nozzle block 8 can be accommodated in the space 102.

The top of the cooling block 100 may be open. The cooling block 100 may have a rectangular parallelepiped shape.

The cooling block 100 can block the heat emitted by the heater 6 from being emitted to the outside.

The cooling block 100 may include a refrigerant tube or a refrigerant channel through which a refrigerant such as coolant passes. Cooling block 100 includes a coolant block including refrigerant tubes or refrigerant channels.

The linear evaporation source 3 may include an upper reflector 110. The upper reflector 110 may be placed at the top of the cooling block 100. An opening 112 may be formed in the upper reflector 110. The opening 112 may have a circular or rectangular shape. It is possible to provide a plurality of openings 112.

The linear evaporation source 3 may include a lower plate 120 and a side reflector 130.

The lower plate 120 may support the heater frame 7. The lower plater 120 may support the cooling block 100.

The lower end of the heater frame 7 and the lower end of the cooling block 100 may be placed on the lower plate 120.

The side reflector 130 may be disposed outside the heater frame 7. The side reflector 130 can reflect heat spreading around the heater 6 in the direction of the crucible 4 and increase the insulation effect.

The linear evaporation source 3 may further include a lower reflector 140.

The lower reflector 140 may be disposed on the heater frame 7 so as to be located below the crucible 4 and the heater 6. The lower reflector 140 is located inside the heater frame 7 and spaced apart from the bottom of the crucible 4. The lower reflector 140 can reflect heat spreading below the heater 6 in the direction of the crucible 4 and increase the insulation effect.

FIG. 2 is a diagram showing a linear evaporation source of the deposition apparatus of this embodiment, and FIG. 3 is a diagram showing the main nozzle of the comparative example and the main nozzle of the present embodiment.

The length of the substrate 21 in the left-right direction (Y) may be longer than the length of the substrate 21 in the front-back direction (X), and the substrate 21 may have a rectangular shape that is long in the left-right direction (Y).

The length of the mask 22 in the left-right direction (Y) may be longer than the length of the mask 22 in the front-back direction (X), and may have a long rectangular shape in the left-right direction (Y).

The mask 22 can be divided in the left and right direction (Y) into a left end area 22A, a center area 22B, and a right end area 22C.

A plurality of openings 23 may be formed, and the plurality of openings 23 may include a left end opening 23A formed in the left end area 22A, a central opening 23B formed in the center area 22B, and a right end opening 23. It may include a right end opening 23C formed in the area 22C.

The length of the linear evaporation source 3 in the left-right direction (Y) may be longer than the length of the linear evaporation source 3 in the front-back direction (X), and the linear evaporation source 3 may have a substantially rectangular parallelepiped shape.

The crucible 4 may be formed to be long in the left and right direction (Y). The crucible 4 may have a shape in which the length in the left-right direction (Y) is longer than the length in the front-back direction (X).

When the crucible 4 has a rectangular shape that is long in the left-right direction, the nozzle block 8 may have a rectangular shape that is long in the left-right direction (Y).

The length of the nozzle plate 81 in the left-right direction (Y) may be longer than the length of the nozzle plate 81 in the front-back direction (X), and the nozzle plate 81 may be a rectangular plate body.

As shown in FIG. 2, the nozzle block 8 may be provided with a plurality of main nozzles 82.

The plurality of main nozzles 82 may include a central nozzle 83 and outer nozzles 84 and 85.

The central nozzle 83 may be located between the outer nozzles 84 and 85. The central nozzle 83 may have a hollow shape. A nozzle passage open in the upward direction (U) may be formed in the central nozzle 83. The nozzle passage of the central nozzle 83 may be open in the vertical direction (Z).

A plurality of central nozzles 83 may be provided.

The outer nozzles 84 and 85 may be spaced apart from each other in the longitudinal direction (Y) of the nozzle block 8.

The outer nozzles 84 and 85 may include a left nozzle 84 and a right nozzle 85, and a plurality of each of the left nozzles 84 and right nozzles 85 may be provided.

The left nozzle 84 and the right nozzle 85 may each have a hollow shape. The left nozzle 84 and the right nozzle 85 may each have a nozzle passage (i.e., nozzle hole) formed in an inclined direction (LC) (RC). The nozzle passage of the left nozzle 84 may be opened in the upper left direction (LC), and the nozzle passage of the right nozzle 85 may be opened in the upper right direction (RC).

The left nozzle 84 and the right nozzle 85 may each have a discharge surface 86 through which the deposition material is discharged. Here, the discharge surface 86 can be defined as the surface on which the exit of the nozzle passage is formed among the left and right nozzles 84 and 85.

The discharge surface 86 of the left nozzle 84 may face the upper left direction (LC), and the discharge surface 86 of the right nozzle 85 may face the upper right direction (RC).

The area where the plurality of main nozzles 82 are formed may be, preferably, up to 2/3 or more of the longitudinal length (L) of the surface area of the deposition material. It may be more than 2/3 L and less than 3/3 L. The distance between the leftmost nozzle and the rightmost nozzle among the plurality of main nozzles 82 may be 2/3 L or more and less than 3/3 L.

For example, when the long side length (L) of the surface area of the deposition material is 1000 mm, the area where the plurality of main nozzles are formed may be 666 to 1000 mm. The distance between the leftmost nozzle and the rightmost nozzle among the plurality of main nozzles 82 is at least 666mm and may be less than 1000mm.

If a nozzle passage that is too small in size compared to the normal L is opened, the particle ejection efficiency of the evaporation source (the amount of particles escaping out of the main nozzle compared to the particles evaporated) of the evaporation source is greatly reduced due to the small interior of the nozzle passage compared to the surface of the deposition material. The collision amount of particles increases, and the pressure value on the surface of the deposition material increases significantly, which increases the boiling point of the deposition material and requires a higher processing temperature (i.e., heating temperature). When this phenomenon occurs for a long period of time, the deterioration rate of the deposition material (organic material) increases, which may be disadvantageous during long-term processing.

When the nozzle-to-pixel value (Distance) increases, the shadow value increases, which may cause problems such as increased defects such as bruises on the substrate 21.

The main nozzle 82 of this embodiment has a shape that can minimize the above shadow.

Figure 3(a) shows the main nozzle of the comparative example compared to the present embodiment, and Figure 3(b) shows the main nozzle of the present embodiment.

The discharge surface 86 of each of the left nozzle 84 and the right nozzle 85 may include an upper end 86a and a lower end 86b.

The height of the upper end (86a) of the discharge surface (86) may be higher than the height of the lower end (86b) of the discharge surface (86).

The discharge surface 86 may be closer to the end 8A of the nozzle block 8 than the lower end 86b.

The extension line extending from the line connecting the lower end 86b and the upper end 86b of the discharge surface 86 may be defined as virtual lines L1, L2, L3, and L4 extending from the discharge surface 86.

As shown in (a) of FIG. 3, the virtual line L1 extending from the discharge surface 86' of the left nozzle 84' of the comparative example may be directed toward the upper right of the left nozzle 84'. , the virtual line L3 extending from the discharge surface 86' of the right nozzle 85' in the comparative example may be directed toward the upper left side of the right nozzle 85', and the virtual lines L1 and L3 in the comparative example may be inclined closer to the horizontal line (H) than to the vertical line (V).

The virtual lines L1 and L3 of the comparative example may have a small inclination angle θ1 (see FIG. 3) of less than 45° with the nozzle plate 81.

In the comparative example, as shown in (a) of FIG. 3, the amount of the deposition material scattered in the direction opposite to the nozzle passage opening direction (LC') of the left nozzle 84' is excessive, and this deposition material is used in the mask 22 ), the shadow value of the pixel formed on the substrate 21 increases.

The deposition material flying in the reverse direction through the left nozzle 84' penetrates into the right end opening 23C at a high angle (θ2; see FIG. 2), which is determined by the aspect ratio of the pixel formed on the substrate 21, that is, the light emitting layer ( The aspect ratio value is reduced, and the deposition material is deposited beyond the pixel area.

In the comparative example, as shown in (a) of FIG. 3, the amount of the deposited material scattered in the direction opposite to the nozzle passage opening direction (RC') of the right nozzle 85' is excessive, and this excess deposited material is When entering the left end opening 23A of the mask 22, the shadow value of the pixel formed on the substrate 21 increases.

The deposition material flying in the reverse direction through the right nozzle 85' penetrates into the left end opening 23A at a high angle, which reduces the aspect ratio value of the pixel formed on the substrate 21, that is, the light emitting layer. , the deposition material is deposited beyond the pixel area.

As described above, the portion deposited beyond the pixel area (i.e., shadow) may cause defects such as bruises and stains on the substrate 21.

In this embodiment, the edge of the left nozzle 84' and the edge of the right nozzle 85' of the comparative example are cut, and the discharge surface 86 of the left nozzle 84 and the discharge surface of the right nozzle 85 ( 86) may be an example of being molded more steeply.

As shown in (b) of FIG. 3, the virtual line L2 extending from the discharge surface 86 of the left nozzle 84 in this embodiment may be directed toward the upper right of the left nozzle 84, and toward the right. The imaginary line (L4) extending from the discharge surface 86 of the nozzle 85 may be directed toward the upper left side of the right nozzle 85, and these imaginary lines (L2, L4) are more aligned with the vertical line (V) than the horizontal line (H). ) can be inclined closer to . In this embodiment, each of the virtual line L2 of the left nozzle 84 and the virtual line L4 of the right nozzle 85 may have a large inclination angle θ3 of more than 45° and less than 90° with the nozzle plate 81, , a preferred example of this inclination angle (θ3) may be greater than 50° and less than 80°.

In the case of this embodiment, the amount of the deposition material scattered in the opposite direction to the nozzle passage opening direction (LC) of the left nozzle 84 can be reduced compared to the case of the left nozzle 84' of the comparative example, and this deposition material is applied to the mask 22 ), the shadow value of the pixel formed on the substrate 21 becomes small.

In addition, in the case of this embodiment, the amount of the deposition material scattered in the opposite direction to the nozzle passage opening direction (RC) of the right nozzle 85 can be reduced compared to the case of the right nozzle 85' of the comparative example, and this deposition material is used as a mask. When entering the left end opening 23A of (22), the shadow value of the pixel formed on the substrate 21 becomes small.

Normally, if the reference plane where Gaussian Distribution starts is steep, such as greater than 50° but less than 80° as in this embodiment, the distribution of particles spreading behind the pixel area may be sparse, thereby expanding the overall nozzle area. It is possible to adjust the shadow value of the pixel.

Meanwhile, when it is necessary to lower the shadow value of a pixel during the deposition process, an auxiliary nozzle (9, see FIGS. 4 to 6) can be inserted into at least one of the left nozzle 84 and the right nozzle 85, and a specific main It is possible to further control local particle scattering at the nozzle.

Figure 4 is a perspective view of an auxiliary nozzle arranged in the nozzle block of this embodiment, Figure 5 is a partially cut away perspective view showing a nozzle block and an auxiliary nozzle of this embodiment, and Figure 6 is a nozzle block and an auxiliary nozzle of this embodiment shown. This is an enlarged cross-sectional view.

The nozzle block 8 may be provided with at least one auxiliary nozzle 9, as shown in FIGS. 4 to 6.

The auxiliary nozzle 9 can be inserted into the main nozzle 82, and in this case, replacement or tuning of the nozzle block 8 can be minimized and mass productivity can be improved.

When the auxiliary nozzle (9) is not installed, the nozzle block (8) requires frequent tuning of the main nozzle (82) when applied to numerous mass production materials (i.e. deposition materials), and is easy to replace due to the nature of the mass production process. don't do it

On the other hand, when the auxiliary nozzle 9 is mounted, there is no need to tune the main nozzle 82 of the nozzle block 8, and the shadow value of the pixel formed on the substrate 21 by the auxiliary nozzle 9 can be minimized. You can.

The auxiliary nozzle 9 can be inserted into the main nozzle 82 and fastened using a tab or the like. In the case of the auxiliary nozzle 9, it may be manufactured as an integrated type rather than a separate type.

Depending on the needs of the process, etc., it is advantageous to manufacture the auxiliary nozzles 9 in an integrated form, so it is also advantageous for a plurality of auxiliary nozzles 9 to be manufactured in an integrated form as needed.

In the case of the auxiliary nozzle (9), it can be a disadvantage because it requires human labor during the mass production process. However, when process safety has progressed for a specific material and modification of the auxiliary nozzle (9) is unnecessary, it can be integrated for convenience. It can be produced with

A plurality of auxiliary nozzles 9 may be provided in the nozzle block 8. The auxiliary nozzle 9 may be inserted and disposed only in a part of the main nozzle 82 if necessary, and may not be inserted in the remainder of the main nozzle 82.

The main nozzle 82 can be divided into a first main nozzle and a second main nozzle depending on the presence or absence of the auxiliary nozzle 9.

The first main nozzle may be a nozzle in which the auxiliary nozzle 9 is not inserted, and some of the deposition material vaporized in the deposition space 41 of the crucible 4 may pass through the first main nozzle.

The second main nozzle may be a nozzle with an auxiliary nozzle 9 inserted therein, and one auxiliary nozzle 9 may be inserted and mounted on one second main nozzle. The remainder of the deposition material vaporized in the deposition space 41 of the crucible 4 may pass through the auxiliary nozzle 9.

As shown in FIGS. 5 and 6, an auxiliary nozzle seating portion 87 on which the auxiliary nozzle 9 is mounted may protrude from the inner lower portion of the second main nozzle.

The upper surface 87a of the auxiliary nozzle seating portion 87 may be inclined.

A through hole 87b through which the vaporized deposition material 42 passes may be formed inside the auxiliary nozzle seating portion 87.

The through hole 87b may guide the vaporized deposition material 42 into the auxiliary nozzle 9.

When the auxiliary nozzle 9 is inserted into the second main nozzle, it may be seated and caught on the upper surface of the auxiliary nozzle seating portion 87, and over-insertion of the auxiliary nozzle 9 may be restricted.

The deposition material 42 vaporized in the deposition space 41 may pass through the through hole 87a of the auxiliary nozzle seating portion 87 and then pass through the interior of the auxiliary nozzle 9. It can be discharged in the direction in which the outlet (O) is open.

When the auxiliary nozzle 9 is inserted into the second main nozzle, a portion of the auxiliary nozzle 9 may be exposed to the outside of the second main nozzle. The deposition material 42 vaporized in the deposition space 41 of the crucible 4 may be discharged in a direction guided by the auxiliary nozzle 9.

As shown in FIG. 6, the height H1 of the top 91 of the auxiliary nozzle 9 may be higher than the height H2 of the top of the second main nozzle.

The angle of the outlet surface 93 of the auxiliary nozzle 9 may be different from the angle of the outlet surface 84a of the second main nozzle. The outlet surface 93 of the auxiliary nozzle 9 may be closer to vertical than the outlet surface 84a of the second main nozzle.

The auxiliary nozzle 9 may have an inlet surface 92 and an outlet surface 93 that are not aligned.

The inlet surface 92 of the auxiliary nozzle 9 can be defined as the surface where the inlet (I) is located, and the outlet surface 93 of the auxiliary nozzle 9 can be defined as the surface where the outlet (O) is located. there is.

The inlet surface 92 of the auxiliary nozzle 9 may be located at the lower part of the auxiliary nozzle 9, and the outlet surface 93 of the auxiliary nozzle 9 may be located at the upper part of the auxiliary nozzle 9.

The auxiliary nozzle 9 may have an inlet surface 92 and an outlet surface 93 that are not aligned.

The first angle between the outlet surface 93 and the horizontal may be greater than the second angle between the inlet surface 92 and the horizontal.

As the first angle becomes larger, the auxiliary nozzle 9 can guide the deposition material 42 in an inclined direction closer to the horizontal direction. Conversely, as the first angle becomes smaller, the auxiliary nozzle 9 can guide the deposition material 42 in an inclined direction closer to the vertical direction.

The auxiliary nozzle 9 as described above can be inserted into the outer nozzle of the main nozzle 82, and the second main nozzle into which the auxiliary nozzle 9 is inserted is the end portion 8A (8B) of the nozzle block 8. ) and the center (8C) may be closer to the ends (8A, 8B; see Figure 2).

The first main nozzle may be the central nozzle 83 located at or close to the center of the nozzle block 8, and the second main nozzle may be the left and right nozzles 84 and 85.

Meanwhile, in this embodiment, instead of separately inserting the auxiliary nozzle 9 into the nozzle block 8, it is possible to integrally mold the auxiliary nozzle 9 through processing of the nozzle block 8. According to this embodiment, scattering in the reverse direction of the second main nozzle is minimized by using a nozzle that has been post-processed to form a specific slope at the opening of the nozzle (for example, 10 degrees or more than a set angle in the horizontal plane for reverse scattering). In addition, an auxiliary nozzle can be used when necessary, and the shadow effect of the pixel formed on the substrate 21 can be minimized.

The number of second main nozzles may be less than the number of first main nozzles.

Figure 7 is a diagram showing an example in which the auxiliary nozzle of this embodiment is screwed to the main nozzle.

In this embodiment, the auxiliary nozzle 9 may be coupled to the main nozzle 82 with a tab. A male thread 9a may be formed on the outer circumference of the auxiliary nozzle 9, and a female thread 82a to which the male thread 9a may be screwed may be formed on the inner circumference of the main nozzle 82. The auxiliary nozzle 9 can be screwed into the main nozzle 82 and connected to it, and the auxiliary nozzle 9 can be firmly fixed by screwing to the main nozzle 82.

The above description is merely an illustrative explanation of the technical idea of the present invention, and various modifications and variations will be possible to those skilled in the art without departing from the essential characteristics of the present invention.

Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but rather to explain it, and the scope of the technical idea of the present invention is not limited by these embodiments.

The scope of protection of the present invention should be interpreted in accordance with the claims below, and all technical ideas within the equivalent scope should be construed as being included in the scope of rights of the present invention.

4: Crucible 6: Heater
8: Nozzle block 9: Auxiliary nozzle
21: substrate 22: mask
41: deposition space 42: deposition material
83: Center nozzle 84: Left nozzle
85: Right nozzle 91: Top of auxiliary nozzle
92: inlet side 93: outlet side
H1: Height of the top of the auxiliary nozzle H2: Height of the top of the second main nozzle

Claims (10)

A deposition space in which the deposition material is accommodated is formed and a long crucible is formed in the left and right directions;
A heater that heats the crucible around the outside of the crucible; and
It includes a nozzle block disposed on the upper part of the crucible, covering the deposition space, and having a plurality of main nozzles protruding,
The plurality of main nozzles include a left nozzle, a central nozzle, and a right nozzle,
An imaginary line extending from the discharge surface of the left nozzle points toward the upper right of the left nozzle,
An imaginary line extending from the discharge surface of the right nozzle points toward the upper left side of the right nozzle,
Each of the virtual line extending from the discharge surface of the left nozzle and the virtual line extending from the discharge surface of the right nozzle are closer to the vertical line than the horizontal line,
Auxiliary nozzles inserted as needed in only some of the plurality of main nozzles and
Further comprising a mask disposed between the nozzle block and the substrate,
A plurality of auxiliary nozzles are provided,
The plurality of main nozzles are
A first main nozzle into which the auxiliary nozzle is not inserted,
It includes a second main nozzle into which the auxiliary nozzle is inserted,
The top of the auxiliary nozzle is exposed to the outside of the second main nozzle,
The top height of the auxiliary nozzle is higher than the top height of the second main nozzle,
The auxiliary nozzle has an inlet surface and an outlet surface that are not parallel,
The first angle between the outlet surface and the horizontal plane is greater than the second angle between the inlet surface and the horizontal plane.
deposition equipment. According to claim 1,
The nozzle block includes a nozzle plate on which the plurality of main nozzles protrude,
The virtual line and the nozzle plate have an inclination angle of more than 50° and less than 80°. delete delete According to claim 1,
A deposition apparatus in which the outlet surface of the auxiliary nozzle is closer to vertical than the outlet surface of the second main nozzle. According to claim 1,
The second main nozzle is a deposition device closer to the end of the nozzle block. According to any one of claims 1, 2, 5, and 6,
A deposition apparatus in which the number of second main nozzles is less than the number of first main nozzles. According to claim 1,
A deposition apparatus in which an auxiliary nozzle seating portion on which the auxiliary nozzle is seated protrudes from an inner lower portion of the second main nozzle. According to claim 8,
A deposition device in which the upper surface of the auxiliary nozzle seating portion is sloped. According to claim 8,
A deposition device in which a through hole is formed inside the auxiliary nozzle seating portion to guide the vaporized deposition material to the auxiliary nozzle.

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