WO2023013816A1

WO2023013816A1 - Linear evaporator

Info

Publication number: WO2023013816A1
Application number: PCT/KR2021/013959
Authority: WO
Inventors: 조영수; 문병준; 최건훈
Original assignee: 엘지전자 주식회사
Priority date: 2021-08-03
Filing date: 2021-10-12
Publication date: 2023-02-09
Also published as: KR102649397B1; KR20230020226A

Abstract

The present embodiment comprises: a crucible having a deposition space in which a deposition material is accommodated and elongated in the left-and-right direction; a heater for heating the crucible along the outer periphery of the crucible; and a nozzle block disposed on the crucible to cover the deposition space and having a plurality of main nozzles protruding therefrom, wherein the plurality of main nozzles comprise a left nozzle, a center nozzle, and a right nozzle, an imaginary line extending from the ejection surface of the left nozzle faces the upper right side of the left nozzle, an imaginary line extending from the ejection surface of the right nozzle faces the upper left side of the right nozzle, and each of the imaginary line extending from the ejection surface of the left nozzle and the imaginary line extending from the ejection surface of the right nozzle may be closer to a vertical line than a horizontal line.

Description

linear evaporation source

The present invention relates to a linear evaporation source, and more particularly, to a deposition apparatus for depositing a deposition material as an object to be deposited.

Deposition is a method of coating gaseous particles on the surface of an object such as metal or glass as a thin solid film.

Recently, as the use of OLED (Organic Light Emitting Diodes) displays in electronic devices such as TVs and mobile phones increases, research on devices and processes for manufacturing OLED display panels is active. In particular, an OLED display panel manufacturing process includes a process of depositing an organic material on a substrate such as a glass substrate in a vacuum state.

Specifically, the deposition process includes a process of evaporating the organic/inorganic material into a gaseous state by heating a crucible containing the organic/inorganic material, and a process of depositing the organic material in a gaseous state on a substrate through a nozzle. includes

At this time, in order to secure excellent thin film properties, the gaseous organic material must be uniformly deposited on the substrate. Accordingly, the deposition apparatus preferably uniformly supplies the gaseous organic material to the plurality of nozzles, and uniformly guides the gaseous organic material passing through the plurality of nozzles to each region of the substrate.

Recently, the precision of the deposition process has increased, making it possible to provide smaller and smaller pixel sizes, for example. In some processes, masks are used to define pixels as evaporated material passes through mask openings. However, the mask's shadowing effects make it difficult to increase the predictability and precision of the evaporation process.

Republic of Korea Patent Registration Publication No. 10-2058612 (published on December 23, 2019) discloses an evaporation source for depositing an evaporated material, the evaporation source including one or more distribution pipes having a plurality of nozzles, and a plurality of Each one of the nozzles of comprises a shielding device configured to direct a plume of evaporated source material toward the substrate, the shielding device comprising a plurality of apertures, at least one of the plurality of apertures from a single connected nozzle. configured to form a plume of vaporized burn material that is discharged.

An object of the present invention is to provide a deposition apparatus capable of minimizing shadow defects of a mask.

The deposition apparatus according to the present embodiment includes a crucible long in a left-right direction in which a deposition space in which a deposition material is accommodated is formed; a heater for heating the crucible around the outside of the crucible; and a nozzle block disposed above the crucible to cover the deposition space and protruding a plurality of main nozzles.

The plurality of main nozzles may include a left nozzle, a center nozzle, and a right nozzle.

An imaginary line extending from the discharge surface of the left nozzle may be directed toward an upper right side of the left nozzle.

An imaginary line extending from the discharge surface of the right nozzle may be directed toward an upper left side of the right nozzle.

Each of the imaginary line extending from the discharge surface of the left nozzle and the virtual line extending from the discharge surface of the right nozzle may be closer to the vertical line than the horizontal line.

The nozzle block may include a nozzle plate from which the plurality of main nozzles protrude.

The imaginary line may have an inclination angle greater than 50° and less than 80° with the nozzle plate 81 .

The deposition apparatus includes auxiliary nozzles inserted only in some of the plurality of main nozzles; and a mask disposed between the nozzle block and the substrate.

A plurality of auxiliary nozzles may be provided, and the plurality of main nozzles may include a first main nozzle into which auxiliary nozzles are not inserted and a second main nozzle into which auxiliary nozzles are inserted.

The top of the auxiliary nozzle is exposed to the outside of the second main nozzle, the height of the top of the auxiliary nozzle is higher than that of the top of the second main nozzle, and the inlet and outlet surfaces of the auxiliary nozzle are not parallel.

The first angle between the exit surface and the horizontal plane may be greater than the second angle between the inlet plane and the horizontal plane.

An outlet surface of the auxiliary nozzle may be closer to vertical than an outlet surface of the second main nozzle.

The second main nozzle may be closer to the end of the center and the end of the nozzle block.

The number of second main nozzles may be less than the number of first main nozzles.

A sub-nozzle mounting portion on which the sub-nozzle is seated may protrude from an inner lower portion of the second main nozzle.

An upper surface of the auxiliary nozzle mounting portion may be inclined.

A through hole guiding the vaporized deposition material to the auxiliary nozzle may be formed inside the auxiliary nozzle seating part.

According to the present embodiment, by minimizing the scattering of the deposition material in the reverse direction of the left nozzle and by minimizing the scattering in the reverse direction of the right nozzle, the shadow effect of the opening of the mask that is far from the left and right nozzles is minimized. It can be minimized, and the precision of the deposition process can be increased.

In addition, when the auxiliary nozzle is inserted, the auxiliary nozzle is seated on the auxiliary nozzle mounting portion, so that the auxiliary nozzle is not over-inserted and the height of the auxiliary nozzle can be maintained.

In addition, replacement of the nozzle convex or tuning of the main nozzle formed on the nozzle convex can be minimized, resulting in high mass productivity.

1 is a longitudinal cross-sectional view showing a deposition apparatus according to an embodiment of the present invention;

2 is a diagram showing a linear evaporation source of the deposition apparatus of this embodiment;

3 is a view showing a main nozzle of a comparative example and a main nozzle of this embodiment;

4 is a perspective view in which auxiliary nozzles are disposed in the nozzle block of the present embodiment;

5 is a partially cut-away perspective view showing a nozzle block and an auxiliary nozzle of this embodiment;

6 is an enlarged cross-sectional view showing a nozzle block and an auxiliary nozzle according to this embodiment.

7 is a diagram illustrating an example in which an auxiliary nozzle according to the present embodiment is screwed into a main nozzle.

Hereinafter, specific embodiments of the present invention will be described in detail with drawings.

1 is a longitudinal cross-sectional view illustrating a deposition apparatus according to an embodiment of the present invention.

The deposition apparatus may include a housing 1 , a substrate support 2 , and a linear evaporation source 3 .

A space 11 may be formed inside the housing 1 . The housing 1 may be a vacuum chamber that forms a vacuum in the space 11 when the deposition material is deposited on the substrate 21 by the linear evaporation source 3 .

The substrate support 2 may be accommodated in the space 11 inside the housing 1 together with the linear evaporation source 3 .

The substrate support 2 may be located on the upper side of the space 11 . A substrate 21 as an object to be deposited may be supported on the substrate support 2 . The substrate 21 may have a rectangular shape.

An example of the substrate 21 may be a substrate of a display device such as OLED, and pixels may be formed on the substrate 21 .

A mask 22 may be disposed between the substrate 21 and the linear evaporation source 3 so that the deposition material 42 vaporized in the linear evaporation source 3 is evenly guided to the substrate 21 .

The mask 22 may be disposed between the nozzle block 8 of the linear evaporation source 3 and the substrate 21 .

The mask 22 may be disposed on the lower side of the substrate 21 . An opening 23 through which vaporized deposition material passes may be formed in the mask 22 .

The linear evaporation source 3 may be disposed in the housing 1 to vaporize the deposition material 42 on the substrate 21 .

The linear evaporation source 3 may include a crucible 4, an inner plate 5, a heater 6, a heater frame 7, and a nozzle block 8.

A deposition space 41 may be formed inside the crucible 4 . The crucible 4 may be shaped like a container with an open top.

A deposition material 42 may be accommodated in the deposition space 41 . An example of the deposition material 42 may be an organic material.

The crucible 4 may be spaced apart from the heater frame 7 .

The top of the crucible 4 may be fastened to the nozzle block 8. The crucible 4 may be fixed to the lower part of the nozzle block 8 . The crucible 4 may be integrated with the nozzle block 8 .

The inner plate 5 may be disposed in the deposition space 41 and a hole 51 may be formed therein. A plurality of holes 51 may be formed.

A plurality of inner plates 5 may be provided inside the crucible 4 . The plurality of inner plates 5 may be spaced apart in the vertical direction (Z).

A plurality of inner plates 5 may be supported at a distance from the crucible 4 .

An inner circumference of the crucible 4 may be formed with a seating groove 44 (or a stepped portion) in which an edge portion of the inner plate 5 is seated. A plurality of seating grooves may be provided, and the plurality of seating grooves may be spaced apart from each other on the inner circumference of the crucible 4 . A plurality of inner plates 5 may be seated spaced apart from each other on the inner circumference of the crucible 4 .

The heater 6 may heat the crucible 4 . The heater 6 may include an electric heater. The heater 6 may surround the outer circumferential surface of the crucible 4 . The heater 6 may heat the crucible 4 around the outside of the crucible 4 .

The heater 6 may be disposed on the outside of the crucible 4 and surround four sides of the crucible 4: front, rear, left and right.

The heater frame 7 may support the heater 6 outside the crucible 4 .

The heater frame 7 may include a frame 71 in which the heater 6 is installed, and a frame support 72 provided on the lower side of the frame 71 to support the frame 71 .

The frame 71 may be provided with a seating pin 74 (or a floating pin) on which at least one of the crucible 4 and the nozzle block 8 is seated.

The seating pin 74 may protrude from the inner circumference of the frame 71 .

A seating portion 46 mounted on a seating pin 74 may be formed on the crucible 4 or the nozzle block 8 . When the seating portion 46 is formed in the crucible 4 , the seating portion 46 may be formed on an outer circumference of the crucible 4 .

The nozzle block 8 may be disposed above the crucible 4 to cover the deposition space 41 . The nozzle block 8 may be a crucible cap disposed over the top of the crucible 4 .

In the case of the nozzle block 8, one nozzle block 8 may be formed in one crucible 4, or two or more divided nozzle blocks 8 may be formed in one crucible 4 as needed. can also be formed.

A nozzle block 8 may be coupled to the top of the crucible 4 . The nozzle block 8 may constitute a crucible assembly together with the crucible 4 .

The nozzle block 8 may be rectangular in shape.

The nozzle block 8 may include a nozzle plate 81 and a main nozzle 82 provided on the nozzle plate 81 .

An upper surface of the nozzle plate 81 may face the substrate 21 and the mask 22 . An upper surface of the nozzle plate 81 may be parallel to the substrate 21 . An upper surface of the nozzle plate 81 may be horizontal.

The main nozzle 82 may protrude from the upper surface of the nozzle plate 81 . The main nozzle 82 may be integrally formed with the nozzle plate 81 . The main nozzle 82 may be manufactured separately from the nozzle plate 81 and then assembled to the nozzle plate 81 by welding or the like.

The lower surface of the nozzle block 8 may face the crucible 4 .

The linear evaporation source 3 may further include a cooling block 100 .

The cooling block 100 may surround the heater frame 7 from the outside of the heater frame 7 . A space 102 may be formed inside the cooling block 100 . The crucible 4 , the heater 6 , the heater frame 7 , and the nozzle block 8 may be accommodated in the space 102 .

A top surface of the cooling block 100 may be open. The cooling block 100 may have a rectangular parallelepiped shape.

The cooling block 100 may block heat emitted by the heater 6 from being emitted to the outside.

The cooling block 100 may include a refrigerant tube or a refrigerant channel through which a refrigerant such as cooling water passes. The cooling block 100 includes a cooling water block including a refrigerant tube or a refrigerant channel.

The linear evaporation source 3 may include an upper reflector 110 . The upper reflector 110 may be disposed above the cooling block 100 . An opening 112 may be formed in the upper reflector 110 . The opening 112 may be circular or rectangular in shape. A plurality of openings 112 may also be provided.

The linear evaporation source 3 may include a lower plate 120 and a side reflector 130 .

The lower plate 120 may support the heater frame 7 . The lower plate 120 may support the cooling block 100 .

The lower end of the heater frame 7 and the lower end of the cooling block 100 may be placed on the lower plate 120 .

The side reflector 130 may be disposed outside the heater frame 7 . The side reflector 130 may reflect heat spreading around the heater 6 in the direction of the crucible 4 and increase the heat insulating effect.

The linear evaporation source 3 may further include a lower reflector 140 .

The lower reflector 140 may be disposed on the heater frame 7 to be positioned below the crucible 4 and the heater 6 . The lower reflector 140 may be positioned inside the heater frame 7 to be spaced apart from the lower end of the crucible 4 . The lower reflector 140 may reflect heat spreading downward from the heater 6 toward the crucible 4 and increase the heat insulating effect.

2 is a diagram showing a linear evaporation source of the deposition apparatus of this embodiment, and FIG. 3 is a diagram showing a main nozzle of a comparative example and a main nozzle of this embodiment.

The length of the substrate 21 in the left-right direction (Y) may be longer than the length of the substrate 21 in the front-back direction (X), and the substrate 21 may have a long rectangular shape in the left-right direction (Y).

The length of the mask 22 in the left-right direction (Y) may be longer than the length of the mask 22 in the front-back direction (X), and may have a long rectangular shape in the left-right direction (Y).

The mask 22 may be divided into a left end area 22A, a center area 22B, and a right end area 22C in the left and right direction Y.

A plurality of openings 23 may be formed, and the plurality of openings 23 include a left end opening 23A formed in the left end region 22A, a center side opening 23B formed in the central region 22B, and a right end opening 23A. A right end opening 23C formed in the region 22C may be included.

The length of the linear evaporation source 3 in the left-right direction (Y) may be longer than the length of the linear evaporation source 3 in the front-back direction (X), and the linear evaporation source 3 may have a substantially rectangular parallelepiped shape.

The crucible 4 may be formed long in the left-right direction (Y). The crucible 4 may have a shape in which the length in the left-right direction (Y) is longer than the length in the front-back direction (X).

When the crucible 4 has a rectangular parallelepiped shape elongated in the left-right direction, the nozzle block 8 may have a rectangular shape elongated in the left-right direction Y.

The length of the nozzle plate 81 in the left-right direction (Y) may be longer than the length of the nozzle plate 81 in the front-back direction (X), and the nozzle plate 81 may be a rectangular plate body.

As shown in FIG. 2 , the nozzle block 8 may be provided with a plurality of main nozzles 82 .

The plurality of main nozzles 82 may include a central nozzle 83 and

outer nozzles

84 and 85 .

The center side nozzle 83 may be located between the

outer side nozzles

84 and 85 . The center side nozzle 83 may be hollow. A nozzle passage open in the upward direction (U) may be formed in the center side nozzle 83 . The nozzle passage of the central nozzle 83 may open in the vertical direction (Z).

A plurality of center side nozzles 83 may be provided.

The

outer nozzles

84 and 85 may be spaced apart from each other in the longitudinal direction Y of the nozzle block 8 .

The

outer nozzles

84 and 85 may include a left nozzle 84 and a right nozzle 85, and each of the left nozzle 84 and the right nozzle 85 may be provided in plurality.

Each of the left nozzle 84 and the right nozzle 85 may have a hollow shape. The left nozzle 84 and the right nozzle 85 may each have a nozzle passage (ie, a nozzle hole) open in an inclined direction (LC) (RC). The nozzle passage of the left nozzle 84 may open in an upper left direction LC, and the nozzle passage of the right nozzle 85 may open in an upper right direction RC.

The left nozzle 84 and the right nozzle 85 may each have a discharge surface 86 through which deposition materials are discharged. Here, the discharge surface 86 may be defined as the surface on which the outlet of the nozzle passage is formed among the left and

right nozzles

84 and 85.

The discharge surface 86 of the left nozzle 84 may face the upper left direction LC, and the discharge surface 86 of the right nozzle 85 may face the upper right direction RC.

The area where the plurality of main nozzles 82 are formed may be up to 2/3 or more of the length L of the surface area of the deposition material in the longitudinal direction, preferably. It may be more than 2/3 L and less than 3/3 L. Among the plurality of main nozzles 82 , the distance between the leftmost nozzle and the rightmost nozzle may be 2/3 L or more and less than 3/3 L.

For example, when the length L of the surface area of the deposition material in the longitudinal direction is 1000 mm, the area where the plurality of main nozzles are formed may be 666 mm to 1000 mm. The distance between the leftmost nozzle and the rightmost nozzle among the plurality of main nozzles 82 is at least 666 mm and may be less than 1000 mm.

When a nozzle passage that is too small compared to the normal L is opened, the particle ejection efficiency of the evaporation source (the amount of particles escaping from the main nozzle versus the evaporated particles) is greatly reduced due to the small nozzle passage compared to the surface of the deposition material. The collision amount of the particles increases and the pressure value on the surface of the deposition material greatly increases, so the boiling point of the deposition material increases and a higher process temperature (ie, heating temperature) is required. When this phenomenon occurs for a long time, the degradation rate of the deposition material (organic material) increases, which may be disadvantageous in the long-term process.

When the nozzle-to-pixel value (Distance) increases, the shadow value increases, and as a result, problems such as black spots and defects of the substrate 21 may increase.

The main nozzle 82 of this embodiment has a shape capable of minimizing the shadow as described above.

Figure 3 (a) is a diagram showing the main nozzle of the comparative example compared to the present embodiment, Figure 3 (b) is a diagram showing the main nozzle of the present embodiment.

Each discharge surface 86 of the left nozzle 84 and the right nozzle 85 may include an upper end 86a and a lower end 86b.

The height of the upper end 86a of the discharge surface 86 may be higher than the height of the lower end 86b of the discharge surface 86 .

The lower end 86b of the discharge surface 86 may be closer to the end 8A of the nozzle block 8 than the upper end 86b.

An extension line extending from a line connecting the lower end 86b and the upper end 86b of the discharge surface 86 may be defined as imaginary lines L1, L2, L3, and L4 extending from the discharge surface 86.

As shown in (a) of FIG. 3, the imaginary line L1 extending from the discharge surface 86' of the left nozzle 84' of the comparative example may be directed in the upper right direction of the left nozzle 84', , The virtual line L3 extending from the discharge surface 86' of the right nozzle 85' of the comparative example may be directed toward the upper left side of the right nozzle 85', and the virtual lines L1 and L3 of the comparative example may be inclined closer to the horizontal line (H) than the vertical line (V).

The virtual lines L1 and L3 of the comparative example may have a small inclination angle (θ1; see FIG. 3 ) with the nozzle plate 81 of less than 45°.

As shown in (a) of FIG. 3, in the comparative example, an excessive amount of the deposition material is scattered in a direction opposite to the opening direction LC' of the nozzle passage of the left nozzle 84', and the deposition material is deposited in the mask 22 ), the shadow value of the pixel formed on the substrate 21 increases.

The deposition material flying in the reverse direction through the left nozzle 84' penetrates the right end opening 23C at a high angle (θ2; see FIG. 2), which is the pixel formed on the substrate 21, that is, the aspect ratio of the light emitting layer ( Aspect ratio) value is decreased, and the evaporation material is deposited beyond the pixel area.

And, as shown in (a) of FIG. 3, in the comparative example, an excessive amount of the deposition material is scattered in a direction opposite to the nozzle passage opening direction RC' of the right nozzle 85', and the excessive deposition material is When entering the left end opening 23A of the mask 22, the shadow value of the pixel formed on the substrate 21 increases.

The deposition material flying in the reverse direction through the right nozzle 85' penetrates the left end opening 23A at a high angle, which reduces the aspect ratio value of the pixel formed on the substrate 21, that is, the light emitting layer, , the deposition material is deposited beyond the pixel area.

As described above, the portion deposited beyond the pixel area (ie, the shadow) may cause defects such as bruises and stains on the substrate 21 .

In this embodiment, the discharge surface 86 of the left nozzle 84 and the discharge surface of the right nozzle 85 ( 86) may be an example of steeper molding.

As shown in (b) of FIG. 3, the imaginary line L2 extending from the discharge surface 86 of the left nozzle 84 of this embodiment may be directed to the upper right side of the left nozzle 84, and the right side The imaginary line L4 extending from the discharge surface 86 of the nozzle 85 may be directed to the upper left side of the right nozzle 85, and these imaginary lines L2 and L4 are more vertical lines V than the horizontal line H. ) can be inclined closer to Each of the virtual line L2 of the left nozzle 84 and the virtual line L4 of the right nozzle 85 of the present embodiment may have a large inclination angle θ3 of more than 45 ° and less than 90 ° with the nozzle plate 81, , a preferable example of such an inclination angle θ3 may be greater than 50° and less than 80°.

In the case of the present embodiment, the amount of the deposition material scattered in the opposite direction to the nozzle passage opening direction LC of the left nozzle 84 can be reduced compared to the case of the left nozzle 84' of the comparative example, and this deposition material is used in the mask 22 ), the shadow value of the pixel formed on the substrate 21 becomes small.

In addition, in the case of the present embodiment, the amount of the deposition material scattered in the opposite direction to the nozzle passage open direction RC of the right nozzle 85 can be reduced compared to the case of the right nozzle 85' of the comparative example, and this deposition material is a mask. When entering the left end opening 23A of 22, the shadow value of the pixel formed on the substrate 21 becomes small.

If the reference plane where the Gaussian Distribution starts is steep, such as greater than 50° and less than 80° as in this embodiment, the distribution of particles spreading out behind the pixel area may be sparse, and through this, the overall nozzle area is expanded while It is possible to adjust the shadow value of a pixel.

Meanwhile, when the shadow value of a pixel needs to be lowered during the deposition process, an auxiliary nozzle 9 (see FIGS. 4 to 6) may be inserted into at least one of the left nozzle 84 and the right nozzle 85, and a specific main It is possible to further control the local particle scattering at the nozzle.

4 is a perspective view of an auxiliary nozzle disposed in the nozzle block of this embodiment, FIG. 5 is a partially cut-away perspective view showing the nozzle block and auxiliary nozzle of this embodiment, and FIG. 6 is a nozzle block and auxiliary nozzle of this embodiment shown. This is an enlarged cross-section.

The nozzle block 8 may be provided with at least one auxiliary nozzle 9 as shown in FIGS. 4 to 6 .

The auxiliary nozzle 9 can be inserted into the main nozzle 82, and in this case, replacement or tuning of the nozzle block 8 can be minimized, and mass productivity can be improved.

When the auxiliary nozzle 9 is not installed, when the nozzle block 8 is applied to a number of mass production materials (i.e. deposition materials), tuning of the main nozzle 82 is frequent, and replacement is easy due to the nature of the mass production process don't

On the other hand, when the auxiliary nozzle 9 is mounted, there is no need to tune the main nozzle 82 of the nozzle block 8, and the shadow value of the pixel formed on the substrate 21 by the auxiliary nozzle 9 can be minimized. can

The auxiliary nozzle 9 may be inserted into the main nozzle 82 and may be fastened using a tab or the like. In the case of the auxiliary nozzle 9, it may be manufactured as an integral type rather than a separate type.

Since there are cases in which an integral type of auxiliary nozzle 9 is advantageous depending on the necessity of a process, it is also advantageous that a plurality of auxiliary nozzles 9 are integrally manufactured as needed.

In the case of the auxiliary nozzle 9, since it requires man-hours in the mass production process, it can be a disadvantage. When the process safety is progressed for a specific material and the modification of the auxiliary nozzle 9 is unnecessary, it is integrated according to convenience. can be made with

A plurality of auxiliary nozzles 9 may be provided in the nozzle block 8 . The auxiliary nozzle 9 may be inserted and disposed only in a part of the main nozzle 82 as needed, and may not be inserted in the rest of the main nozzle 82 .

The main nozzle 82 may be divided into a first main nozzle and a second main nozzle according to the presence or absence of the auxiliary nozzle 9 .

The first main nozzle may be a nozzle into which the auxiliary nozzle 9 is not inserted, and some of the deposition material vaporized in the deposition space 41 of the crucible 4 may pass through the first main nozzle.

The second main nozzle may be a nozzle into which an auxiliary nozzle 9 is inserted, and one auxiliary nozzle 9 may be inserted and mounted to one second main nozzle. The rest of the deposition material vaporized in the deposition space 41 of the crucible 4 may pass through the auxiliary nozzle 9 .

As shown in FIGS. 5 and 6 , an auxiliary nozzle mounting portion 87 on which the auxiliary nozzle 9 is seated may protrude from the inner lower portion of the second main nozzle.

An upper surface 87a of the auxiliary nozzle mounting portion 87 may be inclined.

A through hole 87b through which the vaporized deposition material 42 passes may be formed inside the auxiliary nozzle mounting portion 87 .

The through hole 87b may guide the vaporized deposition material 42 into the auxiliary nozzle 9 .

When the auxiliary nozzle 9 is inserted into the second main nozzle, it may be seated on and caught on the upper surface of the auxiliary nozzle seating part 87, and excessive insertion of the auxiliary nozzle 9 may be restricted.

The deposition material 42 vaporized in the deposition space 41 may pass through the through hole 87a of the auxiliary nozzle mounting portion 87 and then pass through the inside of the auxiliary nozzle 9, The outlet O may be discharged in an open direction.

When the auxiliary nozzle 9 is inserted into the second main nozzle, a part of it may be exposed to the outside of the second main nozzle. The deposition material 42 vaporized in the deposition space 41 of the crucible 4 may be discharged in a direction guided by the auxiliary nozzle 9 .

As shown in FIG. 6 , the height H1 of the top end 91 of the auxiliary nozzle 9 may be higher than the height H2 of the top end of the second main nozzle.

The angle of the outlet surface 93 of the auxiliary nozzle 9 may be different from the angle of the outlet surface 84a of the second main nozzle. The outlet surface 93 of the auxiliary nozzle 9 may be closer to vertical than the outlet surface 84a of the second main nozzle.

The auxiliary nozzle 9 may not have an inlet face 92 and an outlet face 93 parallel to each other.

The inlet surface 92 of the auxiliary nozzle 9 may be defined as the surface where the inlet (I) is located, and the outlet surface 93 of the auxiliary nozzle 9 may be defined as the surface where the outlet (O) is located. there is.

An inlet surface 92 of the auxiliary nozzle 9 may be located below the auxiliary nozzle 9 , and an outlet surface 93 of the auxiliary nozzle 9 may be located above the auxiliary nozzle 9 .

The first angle between the outlet surface 93 and the horizontal surface may be greater than the second angle between the inlet surface 92 and the horizontal surface.

As the first angle increases, the auxiliary nozzle 9 may guide the deposition material 42 in an inclined direction close to the horizontal direction. Conversely, as the first angle is smaller, the auxiliary nozzle 9 may guide the deposition material 42 in an inclined direction closer to the vertical direction.

The auxiliary nozzle 9 as described above may be inserted into the outer nozzle of the main nozzle 82, and the second main nozzle into which the auxiliary nozzle 9 is inserted is the

ends

8A and 8B of the nozzle block 8. ) and the

ends

8A and 8B of the center 8C (see FIG. 2).

The first main nozzle may be a central nozzle 83 located at or close to the center of the nozzle block 8, and the second main nozzle may be left and

right nozzles

84 and 85.

Meanwhile, in this embodiment, it is possible to integrally mold the auxiliary nozzle 9 through processing of the nozzle block 8 without separately inserting the auxiliary nozzle 9 into the nozzle block 8 . According to the present embodiment, scattering in the reverse direction of the second main nozzle is minimized by using a nozzle post-processed to form a specific inclined portion (more than a set angle on the horizontal plane, for example, more than 10 degrees for reverse scattering) at the opening of the nozzle. In this case, an auxiliary nozzle may be used if necessary, and a shadow effect of pixels formed on the substrate 21 may be minimized.

In this embodiment, the auxiliary nozzle 9 may be coupled to the main nozzle 82 with a tap. A male screw 9a may be formed on an outer circumference of the auxiliary nozzle 9 , and a female screw 82a into which the male screw 9a is screwed may be formed on an inner circumference of the main nozzle 82 . The auxiliary nozzle 9 may be coupled by being screwed into the main nozzle 82, and the auxiliary nozzle 9 may be screwed into the main nozzle 82 to be firmly fixed.

The above description is merely an example of the technical idea of the present invention, and various modifications and variations can be made to those skilled in the art without departing from the essential characteristics of the present invention.

Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments.

The protection scope of the present invention should be construed according to the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

Claims

a crucible in which a deposition space in which deposition materials are accommodated is formed and is long in the left and right directions;

a heater for heating the crucible around the outside of the crucible; and

A nozzle block disposed above the crucible to cover the deposition space and having a plurality of main nozzles protrude therefrom;

The plurality of main nozzles include a left nozzle, a center nozzle, and a right nozzle,

An imaginary line extending from the discharge surface of the left nozzle is directed toward the upper right side of the left nozzle,

An imaginary line extending from the discharge surface of the right nozzle is directed toward the upper left side of the right nozzle,

A virtual line extending from the discharge surface of the left nozzle and a virtual line extending from the discharge surface of the right nozzle are closer to a vertical line than a horizontal line.
According to claim 1,

The nozzle block includes a nozzle plate from which the plurality of main nozzles protrude,

The virtual line has an inclination angle of more than 50 ° and less than 80 ° with the nozzle plate.
According to claim 1,

An auxiliary nozzle inserted by only some of the plurality of main nozzles and

Further comprising a mask disposed between the nozzle block and the substrate,

A plurality of auxiliary nozzles are provided,

The plurality of main nozzles

A first main nozzle into which the auxiliary nozzle is not inserted;

Including a second main nozzle into which the auxiliary nozzle is inserted,

The upper end of the auxiliary nozzle is exposed to the outside of the second main nozzle,

The topmost height of the auxiliary nozzle is higher than the topmost height of the second main nozzle,

The auxiliary nozzle is a deposition apparatus in which an inlet surface and an outlet surface are not parallel.
According to claim 3,

A first angle between the outlet surface and the horizontal surface is greater than a second angle between the inlet surface and the horizontal surface.
According to claim 3,

The outlet surface of the auxiliary nozzle is closer to the vertical than the outlet surface of the second main nozzle.
According to claim 1,

The second main nozzle is closer to the end of the center and the end of the nozzle block.
According to claims 1 to 6,

The number of the second main nozzles is smaller than the number of the first main nozzles.
According to claim 1,

A deposition apparatus in which an auxiliary nozzle seating portion protrudes from an inner lower portion of the second main nozzle, on which the auxiliary nozzle is seated.
According to claim 8,

The upper surface of the auxiliary nozzle mounting portion is inclined deposition apparatus.
According to claim 8,

A deposition apparatus having a through hole formed inside the auxiliary nozzle mounting portion to guide the vaporized deposition material to the auxiliary nozzle.