KR102622710B1 - 층을 통한 광의 위상 및 진폭 측정을 위한 장치 및 방법 - Google Patents

층을 통한 광의 위상 및 진폭 측정을 위한 장치 및 방법 Download PDF

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KR102622710B1
KR102622710B1 KR1020197038038A KR20197038038A KR102622710B1 KR 102622710 B1 KR102622710 B1 KR 102622710B1 KR 1020197038038 A KR1020197038038 A KR 1020197038038A KR 20197038038 A KR20197038038 A KR 20197038038A KR 102622710 B1 KR102622710 B1 KR 102622710B1
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phase shift
target
incident beam
intensity values
intensity value
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KR20200003233A (ko
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압둘라흐만 세즈기너 (아포)
쿨짓 버크
에릭 벨라
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • H01L21/027—
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020197038038A 2017-05-26 2018-05-25 층을 통한 광의 위상 및 진폭 측정을 위한 장치 및 방법 Active KR102622710B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762511444P 2017-05-26 2017-05-26
US62/511,444 2017-05-26
US15/882,951 2018-01-29
US15/882,951 US11131629B2 (en) 2017-05-26 2018-01-29 Apparatus and methods for measuring phase and amplitude of light through a layer
PCT/US2018/034521 WO2018218092A1 (en) 2017-05-26 2018-05-25 Apparatus and methods for measuring phase and amplitude of light through a layer

Publications (2)

Publication Number Publication Date
KR20200003233A KR20200003233A (ko) 2020-01-08
KR102622710B1 true KR102622710B1 (ko) 2024-01-08

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KR1020197038038A Active KR102622710B1 (ko) 2017-05-26 2018-05-25 층을 통한 광의 위상 및 진폭 측정을 위한 장치 및 방법

Country Status (6)

Country Link
US (1) US11131629B2 (https=)
EP (1) EP3593209A4 (https=)
JP (1) JP7169299B2 (https=)
KR (1) KR102622710B1 (https=)
TW (1) TWI803496B (https=)
WO (1) WO2018218092A1 (https=)

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KR102408833B1 (ko) 2017-10-05 2022-06-13 에이에스엠엘 네델란즈 비.브이. 기판 상의 하나 이상의 구조체의 특성을 결정하기 위한 계측 시스템 및 방법
DE102019215972A1 (de) 2019-10-17 2021-04-22 Carl Zeiss Smt Gmbh Verfahren zur Messung einer Reflektivität eines Objekts für Messlicht sowie Metrologiesystem zur Durchführung des Verfahrens
WO2021168611A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
CN111356896B (zh) 2020-02-24 2021-01-12 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
CN111406198B (zh) 2020-02-24 2021-02-19 长江存储科技有限责任公司 用于半导体芯片表面形貌计量的系统和方法
WO2021168610A1 (en) * 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems having light source with extended spectrum for semiconductor chip surface topography metrology
KR102894223B1 (ko) * 2020-03-19 2025-12-01 삼성전자 주식회사 Euv 마스크의 위상 측정 장치 및 방법과 그 방법을 포함한 euv 마스크의 제조방법
US20240383226A1 (en) * 2021-09-24 2024-11-21 Toray Industries, Inc. Fiber laminated structure and production method therefor
US11828705B2 (en) * 2022-03-31 2023-11-28 Sparrow Detect, Inc. Apparatus and method for spectroscopically detecting a sample

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US20120075456A1 (en) 2010-09-29 2012-03-29 Carl Zeiss Sms Gmbh Method for characterizing a feature on a mask and device for carrying out the method
US20150198541A1 (en) * 2013-12-10 2015-07-16 Carl Zeiss Sms Gmbh Method and device for examining a mask

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JP2001183812A (ja) 1999-12-24 2001-07-06 Hitachi Ltd 半導体集積回路装置の製造方法およびフォトマスクの検査方法
US20020131052A1 (en) * 2000-11-13 2002-09-19 Emery David G. Advanced phase shift inspection method
US20070121090A1 (en) * 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US20150198541A1 (en) * 2013-12-10 2015-07-16 Carl Zeiss Sms Gmbh Method and device for examining a mask

Also Published As

Publication number Publication date
EP3593209A1 (en) 2020-01-15
US20180340886A1 (en) 2018-11-29
WO2018218092A1 (en) 2018-11-29
JP7169299B2 (ja) 2022-11-10
TWI803496B (zh) 2023-06-01
TW201907228A (zh) 2019-02-16
JP2020522124A (ja) 2020-07-27
KR20200003233A (ko) 2020-01-08
EP3593209A4 (en) 2021-01-20
US11131629B2 (en) 2021-09-28

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