KR102600464B1 - Internet of Things reference board applied to smart farm greenhouse - Google Patents

Abstract

The Internet of Things reference board applied to the smart farm cultivation house includes an application processor that performs calculation operations for operations such as executing test applications, a touch panel for the user interface, and an interface to the application processor as it is used as the main memory of the application processor. A mobile memory connected to the application processor, at least one peripheral device controlled by the application processor and detachably connected to the interface of the application processor, and a decoupling capacitor connected to the internal circuit to change the resistance value and resonant noise caused by the power supply. It is characterized by including a power noise processing unit that reduces.

Description

Internet of Things reference board applied to smart farm greenhouse}

The present invention relates to a reference board, and more specifically, to an Internet of Things reference board applied to a smart farm house supporting 5th generation mobile communication.

Agricultural industries are weakening due to the decline in rural population, aging, stagnant farm income, and climate change. Due to the decline in agricultural workers due to aging and lack of agricultural expertise, ICT (Information and Communication Technology) is a global solution for improving productivity and reducing labor force. By incorporating technology), we are seeking to evolve into a 6th industry where production, distribution, service, etc. are all combined.

A smart farm is defined as a system that creates an optimal growing environment based on data on growth and environmental information and improves the productivity and quality of agricultural products with less input of labor, energy, and nutrients than before.

The next-generation Korean smart farm announced by the government is the 3rd generation. The 1st generation improves convenience through remote monitoring and control, the 2nd generation improves productivity through intelligent precision growth management, and the 3rd generation improves energy optimization and robot automation, etc. 5th generation mobile communication (5G) The goal is to build an integrated system using ).

As intelligent agricultural machines are expected to grow rapidly beyond the smartization of facility cultivation, a new era of unmanned agriculture is expected to open. Just as the proportion of unmanned robots instead of human-operated machines has increased significantly in manufacturing factories, agriculture may also transform into an area that is thoroughly managed rather than an area that relies on human intuition.

By introducing smart farm equipment, greenhouse windows can be opened and closed even when no one is on site, and watering can also be automated. Beyond the application of the Internet of Things (IoT) that introduces sensors, the development of solutions that require 5th generation mobile communications (5G), such as drones and self-driving tractors, is also progressing rapidly.

KR10-2020-0117357A

The present invention was proposed to solve the above technical problems, and is an object that can stably collect data from an environmental measurement sensor board installed in a smart farm cultivation house and control the smart farm cultivation house using 5th generation mobile communication. An Internet reference board is provided.

According to an embodiment of the present invention to solve the above problem, in the Internet of Things reference board applied to a smart farm cultivation house, an application processor that performs calculation operations for operations such as executing a test application, and a user interface for A touch panel, a mobile memory connected to the interface of the application processor when used as the main memory of the application processor, at least one peripheral device controlled by the application processor and detachably connected to the interface of the application processor, and an internal circuit unit. An Internet of Things reference board applied to a smart farm cultivation house is provided with a power noise processing unit that is connected to a decoupling capacitor connected to a variable resistance value and reduces resonance noise caused by the power supply.

The Internet of Things reference board according to an embodiment of the present invention can stably collect data from an environmental measurement sensor board installed in a smart farm cultivation house and control the smart farm cultivation house using 5th generation mobile communication.

Figure 1 is a conceptual diagram of a smart farm cultivation house and Internet of Things reference board.
Figure 2 is a configuration diagram of the Internet of Things reference board 100.
Figure 3 is a more detailed configuration diagram of the Internet of Things reference board 100.
Figure 4 is a circuit diagram of the power noise processor 420 included in the Internet of Things reference board 100.
Figure 5 shows the first embodiment of the attenuation unit 421 of the power noise processing unit 420.
Figure 6 shows a second embodiment of the attenuation unit 421 of the power noise processing unit 420.
Figure 7 is a configuration diagram of the test reliability circuit unit 430 included in the Internet of Things reference board 100.
Figure 8 is a circuit diagram of the reference voltage transmission unit 13 of the test reliability circuit unit 430 according to the first embodiment.
9 is a circuit diagram of the reference voltage transmission unit 13 of the test reliability circuit unit 430 according to the second embodiment.
10 is a circuit diagram of the reference voltage transmission unit 13 of the test reliability circuit unit 430 according to the third embodiment.

Hereinafter, in order to explain the present invention in detail so that a person skilled in the art can easily implement the technical idea of the present invention, embodiments of the present invention will be described with reference to the accompanying drawings.

Figure 1 is a conceptual diagram of a smart farm cultivation house and an Internet of Things reference board.

Referring to FIG. 1, the smart farm cultivation house 101 is equipped with an integrated sensor board to detect the plant growth environment within the cultivation house, such as a temperature sensor, humidity sensor, carbon dioxide concentration sensor, illuminance sensor, and camera.

The Internet of Things reference board (100) is equipped with 5th generation mobile communication, receives and monitors data transmitted from the integrated sensor board of the smart farm cultivation house (101), and analyzes the optimal environment for plant cultivation to provide smart farm cultivation. It plays a role in controlling the cultivation environment of the house 101.

In particular, the Internet of Things reference board 100 to which 5th generation mobile communication is applied is made up of a combination of a light sensor, CIS camera module, touch sensor, memory, and semiconductor components based on the core functions of 5G communication.

The data measured on the integrated sensor board of the smart farm cultivation house (101) is transmitted and processed to the Internet of Things reference board (100) using 5th generation mobile communication. The Internet of Things reference board (100) is a 5th generation mobile communication environment. It is defined as a development board that can respond to and is optimized to be applied to smart farm cultivation houses.

On the development board, a test application that can install and test new APs, memory, and peripheral devices can be installed, and is configured to be developed in response to Android or iOS operating systems, respectively.

Therefore, the IoT reference board (100) was developed to collect data from the integrated sensor board of the smart farm cultivation house (101) and control the smart farm cultivation house (101) by applying a new AP that supports 5th generation mobile communication. It can be.

The Internet of Things reference board 100 can contribute to improving productivity by accumulating big data on the growing environment and utilizing this rather than simply managing the farm from a distance.

The Internet of Things reference board 100 controls the growth environment of plants based on automatic cultivation data, and a dashboard environment for real-time plant production and growth analysis is applied. In other words, an intuitive graphic-based dashboard that can be easily operated at the farm is applied, and real-time ERP, production process, and work monitoring functions are applied.

Hereinafter, the Internet of Things reference board 100 will be described in detail.

FIG. 2 is a configuration diagram of the Internet of Things reference board 100, and FIG. 3 is a more detailed configuration diagram of the Internet of Things reference board 100.

2 and 3, the Internet of Things reference board 100 is equipped with peripheral devices for commanding a compatibility test in the form of a touch panel 163,

It is formed in a structure to which a mobile memory 130 and a non-volatile memory (flash memory, 130a) can be attached.

In addition, the voice recognition module 161, communication module 165, etc. are configured to be attachable and detachable from the interface of the application processor 110. Here, the application processor 110 is defined as a chipset that supports 5th generation mobile communication.

The Internet of Things reference board 100 includes a new application processor (AP) that supports 5th generation mobile communication, and when a new mobile memory is applied, an application processor (AP) and mobile memory 130, A compatibility test between the voice recognition module 161 and the communication module 165 can be performed.

Therefore, in order to conduct a reliable compatibility test between the application processor (AP), mobile memory 130, touch panel 163, voice recognition module 161, and communication module 165, each component is individually It is designed to be detachable.

In addition, when an external frame is installed after a compatibility test, it can be used as a dashboard-type smart farm cultivation house control terminal.

In other words, since the required parts are different for each smart farm cultivation house, only the necessary parts can be installed on the Internet of Things reference board in the form of a development board, and after compatibility testing, it can be used as a terminal for controlling the smart farm cultivation house in the form of a dashboard.

The application processor 110 may be equipped with various types of mobile memory. For example, when the 5th generation mobile communication application processor 110 is newly released, the application processor 110 includes mobile memory that satisfies the LPDDR4 (Low Power DDR4) standard and mobile memory that satisfies the LPDDR3 (Low Power DDR3) standard. Memory can be applied selectively.

Even if the mobile memory 130 satisfies the specifications of DDR3 and DDR4, there may be characteristics depending on the manufacturer, so the Internet of Things reference board 100 including the new application processor 110 is designed to be applied before mass production. A mounting test of the mobile memory 130 must be performed.

Therefore, in the Internet of Things reference board 100 of this embodiment, the mobile memory 130 and the non-volatile memory (flash memory, 130a) are interfaced with the application processor 110 through an interposer or socket. It is configured to be connected.

For reference, this embodiment mainly describes the method of conducting a compatibility test for the mobile memory 130, but in the same way, non-volatile memory (flash memory, 130a) and EMMC of various sizes, various specifications, and various manufacturers are used. Compatibility testing of (Embedded MultiMediaCard), voice recognition module (161), and communication module (165) may be conducted.

As described above, the Internet of Things reference board 100 includes an Internet of Things reference board 100, a mobile memory 130, a memory power supply unit 210, a voice recognition module 161, a communication module 165, It is configured to include a power noise processing unit 420 and a test reliability circuit unit 430.

The Internet of Things reference board 100 includes an application processor 110 that performs calculation operations for operations such as executing a test application, and a touch panel 163 for a user interface.

The mobile memory 130 is used as the main memory of the application processor 110 and is detachably connected to the interface of the application processor 110. For example, the mobile memory 130 may be detachably connected to the interface of the application processor 110 through an interposer or socket.

The memory power supply unit 210 operates to adjust the voltage level of the driving power supplied to the mobile memory 130 according to the control of the test application.

For reference, a plurality of memory power supply units 210 are provided, and the power alarm in the memory test is dualized and controlled into an alarm mode and a blocking mode according to the operating status of the power supply unit, so that an abnormality occurs in some of the multiple power supply units. Even if there is a memory test, it can be configured to continue testing the memory without stopping the test process.

That is, for example, a backflow prevention diode is provided at each output terminal of the plurality of memory power supply units, and a sensor detects the operating state of the plurality of memory power supply units and generates a signal to indicate the operating state of each detected power supply unit. It is equipped with a control logic that classifies and controls the power state of the test system into normal mode, alarm mode, and blocking mode based on the operation status signal of each power supply unit, and controls the power status of the test system and the operation of each power supply unit. An output unit indicating the status may be provided.

The component test application may be stored in storage 140 or ROM 150;

When the Internet of Things reference board 100 is booted, it is loaded into the mobile memory 130 and then accessed by the application processor 110 to perform a test operation.

Since the operation process of the test application is displayed on the touch panel 163, the user can control the test process of the test application or change the test procedure through the touch panel 163.

In order for the Internet of Things reference board 100 to operate normally, the mobile memory 130 must be installed. In this embodiment, the mobile memory 130 is mounted to be detachable from the outside of the Internet of Things reference board 100. , the mobile memory 130 is configured to be connected to an interface compatible with the Internet of Things reference board 100.

The application processor 110 of the Internet of Things reference board 100 can control overall operations of the Internet of Things reference board 100. For example, the application processor 110 may perform calculation operations for operations such as booting the IoT reference board 100, integrity verification, and application execution.

The memory 130 may be used as an operating memory, main memory, buffer memory, or cache memory of the IoT reference board 100 or the application processor 110. The memory 130 may include random access memory devices such as SRAM, DRAM, SDRAM, DDR SDRAM, LPDDR SDRAM, SRAM, PRAM, RRAM, MRAM, etc.

Files used by the application processor 110 are loaded into the memory 130, and files stored in the memory 130 can be accessed by the application processor 110. The memory 130 may be a cache memory of the application processor 110.

Storage 140 may store information, data, or files used in the Internet of Things reference board 100.

The ROM 150 may store various information or program codes required for the Internet of Things reference board 100 to operate in the form of firmware.

Peripheral devices 160 may include interfaces that input data or commands to the application processor 110 or output data to an external device. By way of example, the peripheral devices 160 may include a user input interface such as a keyboard, keypad, button, touch panel, touch screen, touch pad, touch ball, camera, microphone, gyroscope sensor, vibration sensor, piezoelectric element, or LCD. It may include user output interfaces such as (Liquid Crystal Display), OLED (Organic Light Emitting Diode) display devices, AMOLED (Active Matrix OLED) display devices, LEDs, speakers, motors, etc.

In addition, the peripheral devices 160 include a graphics processing unit (GPU), GPS, heart rate sensor, camera, communication module, muscle tone sensor, CIS (cmos image sensor) camera module, touch panel, EMMC (Embedded MultiMediaCard), and voice recognition module. It may include devices such as (161), communication module (165), etc.

Meanwhile, data from the environmental measurement integrated sensor board 310 of the smart farm cultivation house 101 is received by the communication module 165, and the data is processed in the test application and displayed on the touch panel 163.

Meanwhile, in order to respond to the high functionality and high-speed operation of recent electronic device systems, semiconductor integrated circuits are becoming more complex and the operating speed of the circuit is also becoming faster. As the circuits that make up semiconductor devices become more complex, parasitic capacitance, parasitic inductance, and parasitic resistance are increasing. As a result, noise countermeasures in power supply voltage wiring to supply a stable power supply voltage to the internal circuitry are emerging as an important issue. .

Therefore, the proposed IoT reference board 100 includes a power noise processor 420. The power noise processor 420 is connected to a decoupling capacitor and has a variable resistance value to reduce resonance noise caused by the power supply.

FIG. 4 is a circuit diagram of the power noise processing unit 420 included in the Internet of Things reference board 100.

Referring to FIG. 4, the power noise processing unit 420 includes a power supply voltage supply pad ( A decoupling capacitor (Cde-cap) connected in parallel with the VDD Pad) and the ground voltage supply pad (VSS Pad) and the internal circuit part, and connected to the power supply (VDD) line connecting the internal circuit part and the power voltage supply pad (VDD Pad). and a variable resistance unit (R).

For reference, the internal circuit part refers to both peripheral devices and memory devices, but in this embodiment, it is explained assuming that it is a mobile memory 130 that is greatly affected by power noise.

The voltage value at the location where the internal circuitry is located can be expressed as the product of the impedance value at the same location and the operating current consumed by the circuit. Therefore, if the current consumed by the circuit is fixed, the range of voltage fluctuation is ultimately proportional to the size of the impedance value. And, as the parasitic resistance (Rde-cap) value of the decoupling capacitor (Cde-cap) increases, the impedance value at resonance decreases.

This result occurs because the larger the parasitic resistance (Rde-cap) value, the greater the loss at resonance. Similar results can be obtained even when the metal resistance (Rdie) value is large, but when the metal resistance (Rdie) value increases, This is undesirable because the voltage drop due to DC current increases.

Therefore, in the present invention, the series variable resistance unit (R) is connected to the decoupling capacitor (Cde-cap) to increase the impedance value at resonance as the parasitic resistance (Rde-cap) value of the decoupling capacitor (Cde-cap) increases. Reduces voltage drop due to resonance.

The variable resistor unit (R) connects the decoupling capacitor (Cde-cap) and the ground (VSS) line, and minimizes the level difference between the power supplied to the power voltage supply pad (VDD Pad) and the power supplied to the internal circuit. It is configured so that it can be used by changing the resistance value.

FIG. 5 is a first embodiment of the attenuation unit 421 of the power noise processing unit 420, and FIG. 6 is a second embodiment of the attenuation unit 421 of the power noise processing unit 420.

Referring to FIGS. 5 and 6, FIG. 5 is implemented with a plurality of resistance elements (R1 to R4) each connected in series with a decoupling capacitor (Cde-cap) and having a fixed resistance value, through a switch on/off. The resistance value of the variable resistance unit (R) can be varied. At this time, it would be desirable to use each resistance element (R1 to R4) having a different resistance value so that a resistance element that can minimize the voltage drop can be selected.

Next, Figure 6 shows a plurality of NMOS transistors (T1 to T4) connected to a decoupling capacitor (Cde-cap), and an external variable resistance control logic 10 connected to the gate of the plurality of NMOS transistors (T1 to T3). It is a structure in which each transistor is turned on/off according to the level of the on/off control signals (a1, a2, a3) output from the input.

At this time, when the levels of the on/off control signals (a1, a2, and a3) are all low level, the connection between the decoupling capacitor (Cde-cap) and the ground line is disconnected, so the gate of the last NMOS transistor (T4) is connected to the power supply. Voltage was applied.

Meanwhile, the resistance control unit 10 provides on/off control signals (a1, a2, a3) to turn on or turn off each transistor (T1, T2, T3) connected to the decoupling capacitor (Cde-cap). As output logic, it is enabled by an external command signal (COMMAND) during the training process and outputs combinations of logic levels that each control signal (a1, a2, a3) can have, allowing selection of the combination with the lowest noise. and the selected combination of control signals (a1, a2, a3) is input to the gate of each of the transistors (T1, T2, and T3).

Therefore, if a problem due to resonance becomes an issue by reducing the metal resistance value through the power noise processing device 420, it is possible to attenuate the power noise due to resonance, thereby stably processing the driving power of the low-voltage, high-speed operation semiconductor memory. can do.

Additionally, as another embodiment of the variable resistance unit, a switching variable resistance means having a switching operation and a function as a variable resistance element may be used. That is, the switching variable resistance means may be composed of an output pulse generator that generates a variable amplitude output pulse according to a control signal, and a variable resistor that receives the variable amplitude output pulse and changes the switching operation and resistance value.

In addition, as another embodiment of the variable resistor unit, a plurality of resistance segments are included inside the variable resistor unit, and when the plurality of resistance value candidates that the variable resistor unit may have are sorted in order of size, the plurality of resistance value candidates have the same ratio. It can be configured to form a geometric sequence. That is, the variable resistor unit consists of a plurality of resistance segments and a plurality of switches connected to the plurality of resistance segments. The plurality of switches are connected to the plurality of resistance segments by each bit of the N-bit control signal or a combination of each bit. The connection state is controlled, and the resistance value of the variable resistor may be determined according to an exponential function based on an N-bit control signal. Therefore, it is easy for users to intuitively understand the results of changes in resistance value through the control code.

Meanwhile, the Internet of Things reference board 100 pursues high integration, high performance, and low power consumption, and as the integration becomes higher, the internal operating power supply potential is lowered. In order to determine whether the board or system operates normally or maintains normal data, a test is conducted to monitor the internal power potential and force it to the desired power level.

During testing, during the power-up sequence of the board or system, a higher level reference voltage is applied than the originally applied reference voltage, so the internal voltage that should be generated at a certain level has a value above a certain level. Accordingly, a problem may occur that causes the circuit to lose operational reliability.

Therefore, the IoT reference board 100 includes a test reliability circuit unit 430.

The test reliability circuit unit 430 outputs the reference voltage (VREF) according to the driving operation change of the external driving voltage (EXT_VDD) and then generates the pumping voltage (VPP). The generated pumping voltage (VPP) can be used as a driving power for a memory module such as the memory 130.

FIG. 7 is a configuration diagram of the test reliability circuit unit 430 included in the Internet of Things reference board 100.

Referring to FIG. 7, the test reliability circuit unit 430 includes a reference voltage transmission unit 13 and a pumping voltage generation unit 15.

The reference voltage transmitter 13 outputs the input reference voltage VREF1 as the output reference voltage VREF_OUT in response to the test mode signal T_MODE and at least one external driving voltage EXT_VDD.

The pumping voltage generator 15 generates and outputs a pumping voltage (VPP) when the voltage level output from the reference voltage transmitter 13 is higher than a predetermined level. The pumping voltage (VPP) may be supplied to the memory 130, the memory power supply unit 210, etc. Although not shown in the drawing, the pumping voltage generator 15 includes a level detection unit that generates an enable signal according to the output reference voltage (VREF_OUT), an oscillator that operates in response to the enable signal, and a response to the output signal of the oscillator. Thus, it may include a pumping unit that performs a charge pumping operation.

FIG. 8 is a circuit diagram of the reference voltage transmission unit 13 of the test reliability circuit unit 430 according to the first embodiment.

Referring to FIG. 8, the reference voltage transmission unit 13 receives the first reference voltage (VREF1) according to the operating power of the external driving voltage (EXT_VDD1) and outputs the output reference voltage (VREF_OUT), and is the first buffer unit. (122a), a second buffer unit 124a, and a transmission unit 126a.

The first buffer unit 122a compares the level of the input first reference voltage (VREF1) and the external driving voltage (EXT_VDD1), and converts the first reference voltage (VREF1) output by the comparison to the second external driving voltage (EXT_VDD2). ) is output according to the operating power. At this time, the first buffer unit 122a may be designed as a differential amplifier designed with PMOS transistors (T11 and T12) connected in a current mirror type.

The second buffer unit 124a compares the level of the input first reference voltage VREF1 and the third external driving voltage EXT_VDD3, and prevents the input first reference voltage VREF1 from being output due to the comparison. At this time, the second buffer unit 124a may be designed as a differential amplifier designed with PMOS transistors (T13 and T14) connected in a current mirror type.

When the level of the input test mode signal (T_MODE) is activated, the transmission unit 126a can output the first reference voltage (VREF1) as the output reference voltage (VREF_OUT) for forcing, and the input test mode signal ( When the level of T_MODE) is inactivated, the first reference voltage (VREF1) is not output. The transmission unit 126a is preferably designed as a transmission gate M11.

Even if the first reference voltage (VREF1) is applied before the external driving voltages (EXT_VDD1, EXT_VDD2, and EXT_VDD3), the reference voltage transmitter 13 according to the first embodiment of the present invention maintains the level of the test mode signal (T_MODE). In response, the first reference voltage (VREF1) is activated and simultaneously output in response to the operating power of the external driving voltages (EXT_VDD1, EXT_VDD2, and EXT_VDD3).

Therefore, the first reference voltage (VREF1) is applied before the external driving voltages (EXT_VDD1, EXT_VDD2, EXT_VDD3), or the loading of the first reference voltage (VREF1) is lower than that of the external driving voltages (EXT_VDD1, EXT_VDD2, EXT_VDD3) during the power-up sequence. Even if it is completed before loading, since the first reference voltage (VREF1) is output through the reference voltage transmitter 13 according to the voltage operation of the external driving voltages (EXT_VDD1, EXT_VDD2, and EXT_VDD3), the pumping voltage (VPP) is Depending on the driving voltage (EXT_VDD), it does not increase beyond the set value.

FIG. 9 is a circuit diagram of the reference voltage transmission unit 13 of the test reliability circuit unit 430 according to a second embodiment.

Referring to FIG. 9, the reference voltage transmitting unit 13 according to the second embodiment outputs the first reference voltage (VREF) according to the operating power of the external driving voltages (EXT_VDD11 and EXT_VDD12), and the first buffer unit ( 122b), a second buffer unit 124b, a first selection unit 128a, a second selection unit 128b, and a transmission unit 126b. At this time, the first buffer unit 122b, the second buffer unit 124b, and the transfer unit 126b are the first buffer unit 122a, the second buffer unit 124a, and the transfer unit 126a shown in FIG. 5. Since it is the same as, duplicate description of each component will be omitted and the first and second selection units 128a and 128b will be described.

The first selection unit 128a is turned on so that the first reference voltage VREF1 is output when the node N13 is at a low level. At this time, the first selection unit 128a uses the transmission gate M12. The second selection unit 128b is not conducted so that the first reference voltage VREF1 is not output when the node N16 has a high level.

Therefore, the first reference voltage (VREF1) is applied before the external driving voltages (EXT_VDD11, EXT_VDD12), or the loading of the first reference voltage (VREF1) is completed before the loading of the external driving voltages (EXT_VDD11, EXT_VDD12) during the power-up sequence. Even if the first reference voltage VREF1 is output through the reference voltage transmitter 13 according to the voltage operation of the external driving voltages EXT_VDD11 and EXT_VDD12, the pumping voltage VPP is connected to the external driving voltage EXT_VDD. Depending on the situation, it does not increase beyond the set value.

FIG. 10 is a circuit diagram of the reference voltage transmission unit 13 of the test reliability circuit unit 430 according to a third embodiment.

Referring to FIG. 10, the reference voltage transfer unit 13 according to the third embodiment includes a reference voltage buffer unit 127 and a voltage transfer unit 129.

The reference voltage buffer unit 127 compares the level of the internally generated reference driving voltage (IN_VDD) and the external driving voltage (EXT_VDD), and only when the level of the reference driving voltage (IN_VDD) is high level, the reference driving voltage (IN_VDD) ) The driving voltage is output to the voltage transmission unit 129.

The voltage transfer unit 129 outputs the first reference voltage VREF1 as the output reference voltage VREF_OUT only when the reference driving voltage IN_VDD is at a high level. Here, the voltage transfer unit 129 is preferably designed as an NMOS transistor (T25).

Therefore, even if the first reference voltage (VREF1) is applied before the external driving voltage (EXT_VDD), the first reference voltage (VREF) is generated as a new output reference voltage (VREF_OUT) according to the operating power of the external driving voltage (EXT_VDD). Since the output is output, the pumping voltage (VPP) can be prevented from increasing beyond the desired level.

As such, a person skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing its technical idea or essential features. Therefore, the embodiments described above should be understood in all respects as illustrative and not restrictive. The scope of the present invention is indicated by the claims described below rather than the detailed description above, and all changes or modified forms derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention. do.

110: application processor
130: Memory for mobile
140: storage
150: ROM
160: Peripheral devices
10: Resistance control unit

Claims (4)

In the Internet of Things reference board applied to smart farm cultivation houses,
an application processor that performs computational operations for operations such as executing a test application;
touch panel for user interface;
A mobile memory connected to the interface of the application processor when used as the main memory of the application processor;
At least one peripheral device controlled by the application processor and detachably connected to an interface of the application processor;
A power noise processing unit that is connected to a decoupling capacitor connected to the internal circuit unit and has a variable resistance value to reduce resonance noise caused by the power supply; and
It includes a test reliability circuit unit that outputs a reference voltage and then generates a pumping voltage according to changes in the driving operation of the external driving voltage;
The test reliability circuit unit includes a reference voltage transmission unit that outputs the input reference voltage as an output reference voltage in response to a test mode signal and at least one external driving voltage; and a pumping voltage generator that generates and outputs the pumping voltage when the voltage level output from the reference voltage transmitter is above a predetermined level, wherein the pumping voltage is supplied to the mobile memory. Internet of Things reference board applied to palm cultivation houses.
According to paragraph 1,
The power noise processor,
The internal circuit unit supplied with power voltage and ground voltage;
The decoupling capacitor, one end of which is connected to the input part of the power voltage of the internal circuit part; and
It is connected between the other end of the decoupling capacitor and the input part of the ground voltage, and is supplied to the internal circuit part so that the voltage level difference between the power supply voltage or the ground voltage and the power supply voltage or ground voltage input to the internal circuit part is minimized. An Internet of Things reference board applied to a smart farm cultivation house, comprising a variable resistor with a variable resistance value that reduces resonance noise in response to the power supply voltage or ground voltage.
According to paragraph 2,
The variable resistance unit,
A plurality of resistance elements connected in parallel; and
An Internet of Things reference board applied to a smart farm cultivation house, comprising a switching element that selects the plurality of resistance elements.
According to paragraph 3,
The plurality of resistance elements are:
A plurality of NMOS transistors whose drain terminal is connected to the decoupling capacitor and whose source terminal is connected to a ground line; and
An NMOS transistor with a drain terminal connected to the decoupling capacitor, a source terminal connected to the ground line, and a gate terminal to which a power supply voltage is applied. An Internet of Things reference board applied to a smart farm cultivation house, comprising: .