KR102596681B1 - Electrochromic Device - Google Patents
Electrochromic Device Download PDFInfo
- Publication number
- KR102596681B1 KR102596681B1 KR1020170134375A KR20170134375A KR102596681B1 KR 102596681 B1 KR102596681 B1 KR 102596681B1 KR 1020170134375 A KR1020170134375 A KR 1020170134375A KR 20170134375 A KR20170134375 A KR 20170134375A KR 102596681 B1 KR102596681 B1 KR 102596681B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- electrochromic
- oxide
- thickness
- tungsten
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 claims description 42
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 25
- 229910052741 iridium Inorganic materials 0.000 claims description 23
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 22
- 239000003792 electrolyte Substances 0.000 claims description 20
- 239000011787 zinc oxide Substances 0.000 claims description 18
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- DBPBAPSFGLNQOX-UHFFFAOYSA-N iridium trihydride Chemical compound [IrH3] DBPBAPSFGLNQOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 238000002845 discoloration Methods 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 238000004042 decolorization Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000006479 redox reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 150000003481 tantalum Chemical class 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000006056 electrooxidation reaction Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- -1 hydrogen ions Chemical class 0.000 description 2
- 230000037427 ion transport Effects 0.000 description 2
- 150000002503 iridium Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
- G02F1/157—Structural association of cells with optical devices, e.g. reflectors or illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/153—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/023—Alloys based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/34—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 reflector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/16—Materials and properties conductive
Abstract
본 발명은 공동증착된 수소화된 화합물을 포함하고, 비다공성인 반사층, 또는 투명전도층을 포함함으로써 균일한 변색 및 탈색이 가능한 전기변색 디바이스에 관한 것이다.The present invention relates to an electrochromic device capable of uniform discoloration and decolorization by including a co-deposited hydrogenated compound and a non-porous reflective layer or transparent conductive layer.
Description
본 발명은 전기변색 디바이스에 관한 것으로, 더욱 상세하게는 공동증착된 수소화된 화합물을 포함하고, 비다공성인 반사층, 또는 투명전도층을 포함함으로써 균일한 변색 및 탈색이 가능한 전기변색 디바이스에 관한 것이다.The present invention relates to an electrochromic device, and more specifically, to an electrochromic device capable of uniform color change and decolorization by including a co-deposited hydrogenated compound and a non-porous reflective layer or transparent conductive layer.
전기변색(Electrochromism)이란 전압을 인가하면 전계방향에 의해 가역적으로 색상이 변하는 현상으로서, 이러한 특성을 지닌 전기화학적 산화 환원 반응에 의해서 재료의 광특성이 가역적으로 변할 수 있는 물질을 전기변색물질이라고 한다. 이러한 전기변색물질은 외부에서 전기적 신호가 인가되지 않는 경우에는 색을 띠지 않고 있다가 전기적 신호가 인가되면 색을 띠게 되거나, 반대로 외부에서 신호가 인가되지 않는 경우에는 색을 띠고 있다가 신호가 인가되면 색이 소멸하는 특성을 갖는다.Electrochromism is a phenomenon in which the color changes reversibly depending on the direction of the electric field when voltage is applied. Materials whose optical properties can be reversibly changed by an electrochemical redox reaction with these characteristics are called electrochromic materials. . These electrochromic materials are colorless when no electrical signal is applied from the outside, but become colored when an electrical signal is applied, or conversely, they are colored when no signal is applied from the outside, but become colored when a signal is applied. It has the property of disappearing color.
전기변색 장치는 전압의 인가에 따라 전기적인 산화환원반응에 의해 전기변색 물질의 색상이 변함으로써, 광투과특성이 변하는 장치이다. 현재 다양한 기술분야에서 선택적으로 빛을 투과시킬 수 있는 전기변색 장치의 수요가 증가하고 있다. 이러한 전기변색 장치는 스마트 윈도우, 스마트 미러, 디스플레이 장치, 위장 장치 등 다양한 분야에 적용될 수 있다.An electrochromic device is a device that changes light transmission characteristics by changing the color of an electrochromic material through an electrical oxidation-reduction reaction when voltage is applied. Currently, the demand for electrochromic devices that can selectively transmit light is increasing in various technological fields. These electrochromic devices can be applied to various fields such as smart windows, smart mirrors, display devices, and camouflage devices.
전기변색 디바이스는 이온 및 전자를 가역적으로 그리고 동시에 삽입할 수 있는 전기변색 물질의 층을 포함하고, 이온 및 전자의 산화 상태는 삽입 및 배출된 상태에 대응하여, 이들이 적합한 전원을 통해 공급될 때 별개의 컬러를 갖고, 이들 상태들 중 하나는 다른 상태보다 더 높은 광 투과율을 갖는다. 전기변색 물질은 일반적으로 텅스텐 산화물을 주원료로 하고, 예를 들어, 투명 전기 전도성층과 같은 전자 소스와, 이온 전도성 전해질과 같은 이온(양이온 또는 음이온) 소스와 접촉되 어야 한다. 또한 양이온을 가역적으로 삽입할 수 있는 대항-전극은, 거시적으로, 전해질이 단일 이온 매질로서 나타나도록 전기변색 물질의 층에 대해 대칭적으로 전기변색물질의 층과 연관되어야 한다는 것이 알려져 있다. 대항-전극은, 컬러가 중성이거나, 전기변색층이 채색된 상태일 때 적어도 투명이거나 거의 채색되지 않는 층을 주원료로 해야 한다.An electrochromic device comprises a layer of electrochromic material capable of reversibly and simultaneously inserting ions and electrons, the oxidation states of the ions and electrons corresponding to the inserted and ejected states so that they become distinct when supplied through a suitable power source. has a color of , and one of these states has a higher light transmittance than the other state. Electrochromic materials are generally based on tungsten oxide and must be in contact with an electron source, for example, a transparent electrically conductive layer, and an ion (cation or anion) source, such as an ion-conducting electrolyte. It is also known that the counter-electrode, capable of reversibly inserting positive ions, should be associated with a layer of electrochromic material symmetrically with respect to the layer, such that, macroscopically, the electrolyte appears as a single ionic medium. The counter-electrode must be made mainly of a layer that is neutral in color or at least transparent or barely colored when the electrochromic layer is colored.
텅스텐 산화물이 양이온 전기변색 물질이기 때문에, 즉, 그 채색된 상태가 가장 감소된 상태에 대응하기 때문에, 니켈 산화물 또는 이리듐 산화물을 주원료로 한 음이온 전기변색 물질은 일반적으로 대항-전극에 사용된다. 또한, 예를 들어 전 기적으로 전도성 폴리머(폴리아닐린) 또는 프러시안 블루(Prussian blue)와 같은 세륨 산화물 또는 유기 물질과 같은 해당 산화 상태에서 광학적으로 중성인 물질을 사용하는 것이 제안되기도 하였다.Since tungsten oxide is a cationic electrochromic material, that is, its colored state corresponds to the most reduced state, anionic electrochromic materials based on nickel oxide or iridium oxide are generally used for the counter-electrode. It has also been proposed to use materials that are optically neutral in the relevant oxidation state, for example electrically conducting polymers (polyaniline) or cerium oxide or organic materials such as Prussian blue.
한국특허공개 제2011-0043595호에는 전기적으로 제어가능한 패널, 특히 창유리를 형성하도록 의도된 제어된 적외선 반사를 갖는 전기변색 디바이스가 기재되어 있고, 미국공개특허 제2007-0058237호에는 이온저장층, 투명 고체전해질층, 전기변색층 및 반사층을 포함하는 다층 시스템의 전기변색 소자가 기재되어 있다.Korean Patent Publication No. 2011-0043595 describes an electrochromic device with controlled infrared reflection intended to form electrically controllable panels, especially window panes, and U.S. Patent Publication No. 2007-0058237 discloses an ion storage layer, a transparent An electrochromic device of a multilayer system comprising a solid electrolyte layer, an electrochromic layer, and a reflective layer is described.
그러나, 한국특허공개 제2011-0043595호에서는 이온저장층의 주원료로서 이리듐이 단독으로 사용되는데, 이러한 경우에 이리듐이 UV나 수분에 약해 분해되고, 또한 이리듐이 텅스텐과 직접 접촉시 단락이 발생되는 등의 문제점이 있고, 미국공 개특허 제2007-0058237호에서는 물 또는 물분자가 통할 수 있도록 반사층을 반드시 다공성으로 해야 하는 복잡한 공정을 거쳐야 하는 등의 문제점이 있다.However, in Korean Patent Publication No. 2011-0043595, iridium is used alone as the main raw material of the ion storage layer. In this case, iridium is weak to UV or moisture and decomposes, and when iridium comes into direct contact with tungsten, a short circuit occurs, etc. There is a problem, and in U.S. Patent Publication No. 2007-0058237, there is a problem such as having to go through a complicated process to make the reflective layer porous so that water or water molecules can pass through.
따라서, 본 발명은 상기와 같은 종래의 문제점을 해결하기 위한 것으로서, 이리듐과 탄탈룸, 바람직하게는 수소화 이리듐과 수소화 탄탈룸을 동시에 증착시킴으로써 이리듐을 단독으로 이용했을 때에 이리듐이 UV나 수분에 약해 분해되고, 텅스텐과 직접 접촉시 단락이 나타나는 등의 문제점을 해결하고, 또한, 공동증착된 수소화 화합물을 이용함으로써, 물분자를 이동시켜 전기변색에 필요한 이온을 주입하기 위해 복잡한 공정으로 다공성 반사층을 형성할 필요없이, 간편한 공정으로 비다공성 반사층이 형성가능한 전기변색 디바이스를 제공하는 것을 목적으로 한다.Therefore, the present invention is intended to solve the above-described conventional problems by simultaneously depositing iridium and tantalum, preferably iridium hydride and tantalum hydride, so that when iridium is used alone, iridium is weak to UV or moisture and decomposes. It solves problems such as short circuiting when in direct contact with tungsten, and by using a co-deposited hydrogenated compound, there is no need to form a porous reflective layer through a complicated process to move water molecules and inject the ions necessary for electrochromism. The purpose is to provide an electrochromic device in which a non-porous reflective layer can be formed through a simple process.
상기와 같은 목적을 달성하기 위한 본 발명에 따른 전기변색 디바이스는,The electrochromic device according to the present invention to achieve the above object,
투명전도층, 이온저장층, 전해질층, 전기변색층, 및 반사층 또는 투명전도층을 포함하는 전기변색 디바이스로서,An electrochromic device comprising a transparent conductive layer, an ion storage layer, an electrolyte layer, an electrochromic layer, and a reflective layer or transparent conductive layer,
상기 이온저장층은 이리듐 및 탄탈룸을 포함하고,The ion storage layer includes iridium and tantalum,
상기 전해질층은 탄탈룸을 포함하고,The electrolyte layer includes tantalum,
상기 전기변색층은 텅스텐을 포함하고,The electrochromic layer includes tungsten,
상기 이온저장층의 이리듐 및 탄탈룸, 및 상기 전기변색층의 텅스텐 중 적어도 하나는 수소화되고,At least one of iridium and tantalum in the ion storage layer and tungsten in the electrochromic layer is hydrogenated,
상기 반사층은 비다공성일 수 있다.The reflective layer may be non-porous.
상기 투명전도층은 산화인듐아연(IZO), 산화인듐주석(ITO), 알루미늄 도핑된 산화아연(AZO), 붕소 도핑된 산화아연(BZO), 텅스텐 도핑된 산화아연(WZO) 및 텅스텐 도핑된 산화주석(WTO), 불소 도핑된 산화주석(FTO), 갈륨 도핑된 산화아연(GZO), 안티몬 도핑된 산화주석(ATO), 인듐 도핑된 산화아연(IZO) 및 니오븀 도핑된 산화티타늄(ZnO)으로부터 선택되는 1종 이상의 산화물을 포함할 수 있다.The transparent conductive layer is made of indium zinc oxide (IZO), indium tin oxide (ITO), aluminum doped zinc oxide (AZO), boron doped zinc oxide (BZO), tungsten doped zinc oxide (WZO), and tungsten doped oxide. From tin (WTO), fluorine-doped tin oxide (FTO), gallium-doped zinc oxide (GZO), antimony-doped tin oxide (ATO), indium-doped zinc oxide (IZO) and niobium-doped titanium oxide (ZnO). It may contain one or more selected oxides.
상기 이온저장층은 이리듐을 20∼38중량% 포함할 수 있다.The ion storage layer may contain 20 to 38% by weight of iridium.
상기 이온저장층에 있어서, 상기 이리듐은 화학식 HaIrO2(여기서, 0＜a＜2)의 수소화 이리듐이고, 상기 탄탈룸은 화학식 HbTa2O5(여기서, 0＜b＜5)의 수소화 탄탈룸일 수 있다.In the ion storage layer, the iridium may be hydrogenated iridium with the chemical formula HaIrO2 (where 0<a<2), and the tantalum may be hydrogenated tantalum with the chemical formula HbTa2O5 (where 0<b<5).
상기 전기변색층에 있어서, 상기 텅스텐은 화학식 HcWO3(여기서, 0＜C＜3)의 수소화 텅스텐일 수 있다.In the electrochromic layer, the tungsten may be tungsten hydride of the chemical formula HcWO3 (where 0<C<3).
상기 반사층은 알루미늄, 은, 루비듐, 몰리브덴, 크롬, 루테늄, 금, 구리, 니켈, 납, 주석, 인듐 및 아연으로부터 선택되는 1종 이상으로 이루어질 수 있다.The reflective layer may be made of one or more types selected from aluminum, silver, rubidium, molybdenum, chromium, ruthenium, gold, copper, nickel, lead, tin, indium, and zinc.
상기 투명전도층의 두께는 150∼800nm이고, 상기 이온저장층의 두께는 50∼500nm이며, 상기 전해질층의 두께는 180∼800nm이고, 상기 전기변색층의 두께는 140∼650nm이며, 상기 반사층의 두께는 30∼280nm일 수 있다.The thickness of the transparent conductive layer is 150 to 800 nm, the thickness of the ion storage layer is 50 to 500 nm, the thickness of the electrolyte layer is 180 to 800 nm, the thickness of the electrochromic layer is 140 to 650 nm, and the thickness of the reflective layer is 140 to 650 nm. The thickness may be 30 to 280 nm.
본 발명에 따른 전기변색 디바이스에 의하면, 이리듐과 탄탈룸, 바람직하게 는 수소화 이리듐과 수소화 탄탈룸을 동시에 증착시킴으로써 이리듐을 단독으로 이용했을 때에 이리듐이 UV나 수분에 약해 분해되고 텅스텐과 직접 접촉시 단락이 나타나는 등의 문제점을 해소하는 효과가 있고, 또한 공동증착된 수소화 화합물을 이용함으로써 반사층에서 물분자를 이동시켜 전기변색에 필요한 이온을 주입할 필요없이, 공정 중에 직접 수소 이온을 주입시킴으로써 간편한 공정으로 비다공성 반사층을 형성할 수 있는 효과를 갖는다.According to the electrochromic device according to the present invention, iridium and tantalum, preferably iridium hydride and tantalum hydride, are deposited simultaneously, so that when iridium is used alone, iridium is weak to UV or moisture and decomposes, and short circuit occurs when it comes into direct contact with tungsten. In addition, by using a co-deposited hydrogenated compound, there is no need to move water molecules in the reflective layer and inject the ions necessary for electrochromism, but by directly injecting hydrogen ions during the process, non-porous formation is achieved through a simple process. It has the effect of forming a reflective layer.
도 1은 본 발명의 일 구체예에 따른 전기변색 디바이스의 구조를 나타내는 도면이다.
도 2는 다공성 수소화 텅스텐 박막의 표면 사진이다.
도 3은 수소화 텅스텐 박막의 두께 측정 사진이다.
도 4는 수소화 탄탈룸 및 수소화 이리듐이 공동증착된 박막 표면의 사진이다.
도 5는 수소화 탄탈룸 및 수소화 이리듐이 공동증착된 박막의 두께 측정 사진이다.
도 6은 공동증착된 수소화 탄탈룸 및 수소화 이리듐 박막의 투과율을 측정한 그래프이다.
도 7은 공동증착된 수소화 탄탈룸 및 수소화 이리듐 박막의 투과율 측정의 작동시 전력 인가 측정 결과를 나타낸 그래프이다.
도 8은 수소화 텅스텐 박막의 투과율을 측정한 그래프이다.
도 9는 수소화 텅스텐 박막의 투과율 측정의 작동시 전력 인가 측정 결과를 나타낸 그래프이다. 1 is a diagram showing the structure of an electrochromic device according to an embodiment of the present invention.
Figure 2 is a photograph of the surface of a porous tungsten hydride thin film.
Figure 3 is a photograph of measuring the thickness of a tungsten hydride thin film.
Figure 4 is a photograph of a thin film surface on which tantalum hydride and iridium hydride were co-deposited.
Figure 5 is a thickness measurement photograph of a thin film co-deposited with tantalum hydride and iridium hydride.
Figure 6 is a graph measuring the transmittance of co-deposited tantalum hydride and iridium hydride thin films.
Figure 7 is a graph showing the power application measurement results during operation of transmittance measurement of co-deposited hydrogenated tantalum and iridium hydride thin films.
Figure 8 is a graph measuring the transmittance of a tungsten hydride thin film.
Figure 9 is a graph showing the results of power application measurement during operation of measuring the transmittance of a tungsten hydride thin film.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다.The advantages and features of the present invention and methods for achieving them will become clear by referring to the embodiments described in detail below along with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. The present embodiments are merely provided to ensure that the disclosure of the present invention is complete and to be understood by those skilled in the art. It is provided to fully inform those who have the scope of the invention, and the present invention is only defined by the scope of the claims.
다른 정의가 없다면, 본 명세서에서 사용되는 모든 용어(기술 및 과학적 용어를 포함)는 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 공통적으로 이해될 수 있는 의미로 사용될 수 있을 것이다. 또 일반적으로 사용되는 사전에 정의되어 있는 용어들은 명백하게 특별히 정의되어 있지 않은 한 이상적으로 또는 과도하게 해석되지 않는다.Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with meanings that can be commonly understood by those skilled in the art to which the present invention pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless clearly specifically defined.
이하, 본 발명에 따른 전기변색 디바이스에 대하여 상세히 설명한다.Hereinafter, the electrochromic device according to the present invention will be described in detail.
도 1에서 나타낸 바와 같이, 본 발명의 일 구체예에 따른 전기변색 디바이스는 투명전도층(110), 이온저장층(120), 전해질층(130), 전기변색층(140), 및 반사층(150) 또는 투명전도층(160)의 순서로 적층되는 전기변색 디바이스로서,As shown in Figure 1, the electrochromic device according to one embodiment of the present invention includes a transparent conductive layer 110, an ion storage layer 120, an electrolyte layer 130, an electrochromic layer 140, and a reflective layer 150. ) or an electrochromic device in which the transparent conductive layer 160 is laminated in that order,
상기 이온저장층은 이리듐 및 탄탈룸을 포함하고,The ion storage layer includes iridium and tantalum,
상기 전해질층은 탄탈룸을 포함하고,The electrolyte layer includes tantalum,
상기 전기변색층은 텅스텐을 포함하고,The electrochromic layer includes tungsten,
상기 이온저장층의 이리듐 및 탄탈룸, 및 상기 전기변색층의 텅스텐 중 적어도 하나는 수소화되고,At least one of iridium and tantalum in the ion storage layer and tungsten in the electrochromic layer is hydrogenated,
상기 반사층은 비다공성일 수 있다.The reflective layer may be non-porous.
본 발명에 따른 전기변색 디바이스에 있어서, 상기 투명전도층(110, 130)은 전력공급이 가능하고, 전기변색을 유도할 수 있는 박막형 투명 산화물 전도층으로서, 특별히 한정이 없고, 예를 들면 산화인듐아연(IZO), 산화인듐주석(ITO), 알루미늄 도핑된 산화아연(AZO), 붕소 도핑된 산화아연(BZO), 텅스텐 도핑된 산화아연(WZO) 및 텅스텐 도핑된 산화주석(WTO), 불소 도핑된 산화주석(FTO), 갈륨 도핑된 산화아연(GZO), 안티몬 도핑된 산화주석(ATO), 인듐 도핑된 산화아연(IZO) 및 니오븀 도핑된 산화티타늄(ZnO)으로부터 선택되는 1종 이상의 산화물을 포함할 수 있다.In the electrochromic device according to the present invention, the transparent conductive layers 110 and 130 are thin film-type transparent oxide conductive layers capable of supplying power and inducing electrochromism, and are not particularly limited, for example, indium oxide. Zinc (IZO), indium tin oxide (ITO), aluminum doped zinc oxide (AZO), boron doped zinc oxide (BZO), tungsten doped zinc oxide (WZO) and tungsten doped tin oxide (WTO), fluorine doped. At least one oxide selected from tin oxide (FTO), gallium doped zinc oxide (GZO), antimony doped tin oxide (ATO), indium doped zinc oxide (IZO), and niobium doped titanium oxide (ZnO). It can be included.
본 발명에 따른 전기변색 디바이스에 있어서, 상기 이온저장층(120)은 전해질(130)에 부족한 이온을 공급하기 위한 층으로서, 상기 이온저장층은 이리듐 및 탄탈룸을 포함할 수 있는데, 이리듐을 단독으로 사용했을 시, 텅스텐과 접촉할 경우, 단락이 발생할 수 있고, 또한, 이리듐 단독으로 존재하는 층에 다른 물질을 적층할 경우, 에너지를 뺏길 수 있으며, 이리듐은 수분에 약하여 수분이 스며들 경우 문제가 생기고, 이리듐끼리의 결합이 UV에 의해 분해될 수 있어, 이리듐 및 탄탈룸을 공동증착시켜 상기와 같은 문제점을 해소하고, 강도(내구성)를 확보할 수 있어 바람직하다.In the electrochromic device according to the present invention, the ion storage layer 120 is a layer for supplying ions lacking in the electrolyte 130. The ion storage layer may include iridium and tantalum, and iridium alone may be used. When used, if it comes into contact with tungsten, a short circuit may occur, and if another material is laminated on a layer that exists alone, energy may be lost. Iridium is weak to moisture, so if moisture seeps in, problems may occur. Since the bonds between iridium can be decomposed by UV, it is desirable to co-deposit iridium and tantalum to solve the above problems and ensure strength (durability).
상기 이온저장층은 이리듐을 20∼38중량% 포함하는 것이 바람직하고, 23∼33중량% 포함하는 것이 더욱 바람직한데, 20중량% 미만이면 전기변색 작용이 일어나지 않아 바람직하지 않고, 38중량%를 초과하면 자외선과 반응하여 열화하여 변색효과가 떨어지거나, 붉은색으로 고착화가 될 수 있고, 또한 내구성에 문제가 생길 수 있어 바람직하지 않다.The ion storage layer preferably contains 20 to 38% by weight of iridium, more preferably 23 to 33% by weight, but less than 20% by weight is undesirable because electrochromic effect does not occur, and more than 38% by weight is undesirable. This is undesirable because it may react with ultraviolet rays and deteriorate, reducing the discoloration effect, causing the color to become fixed in red, and also causing problems with durability.
상기 이온저장층에 있어서, 상기 이리듐은 화학식 HaIrO2(여기서, 0＜a＜2)의 수소화 이리듐이고, 상기 탄탈룸은 화학식 HbTa2O5(여기서, 0＜b＜5)의 수소화 탄탈룸일 수 있으며, 상기와 같이 수소화 이리듐 및 탄탈룸을 포함함으로써 산화환원 반응을 위해 수소 이온을 별도의 공정으로 주입할 필요가 없다.In the ion storage layer, the iridium may be hydrogenated iridium of the chemical formula HaIrO2 (where 0<a<2), and the tantalum may be hydrogenated tantalum of the chemical formula HbTa2O5 (where 0<b<5), as described above. By including iridium hydride and tantalum, there is no need to inject hydrogen ions in a separate process for redox reaction.
본 발명에 따른 전기변색 디바이스에 있어서, 상기 전해질층은 이온전달의 역할을 수행하게 되는데, 막의 물리적 성질에 따라서 액상 전해질과 고상 전해질로 구분되고, 이온전달 물질의 종류에 따라서 프로톤 전해질과 알칼리 이온 전해질로 구분될 수 있으며, 상기 전해질층은 탄탈룸, 더욱 바람직하게는 산화탄탈룸(Ta2O5)을 포함할 수 있다.In the electrochromic device according to the present invention, the electrolyte layer plays the role of ion transport. Depending on the physical properties of the membrane, it is divided into liquid electrolyte and solid electrolyte, and depending on the type of ion transport material, it is a proton electrolyte and an alkaline ion electrolyte. It can be divided into, and the electrolyte layer may include tantalum, more preferably tantalum oxide (Ta2O5).
본 발명에 따른 전기변색 디바이스에 있어서, 상기 전기변색층은 변색을 담당하는 층으로, 전기 인가에 의해 색의 변화율이 큰 층이다. 더욱 상세히 설명하면, 상기 전기변색층은 액상 또는 고상의 전기변색물질로 이루어질 수 있고, 이 전기변색물질은 전기화학적 산화, 환원 반응에 의하여 광흡수도가 변화하는 전기변색특성을 갖는 물질로, 전압의 인가 여부 및 전압의 세기에 따라서 가역적으로 전기변색물질의 전기 화학적 산화, 환원 현상이 일어나고, 이에 의하여 전기변색물질의 투명도 및 흡광도가 가역적으로 변경될 수 있다.In the electrochromic device according to the present invention, the electrochromic layer is a layer responsible for color change and is a layer whose color change rate is high when electricity is applied. In more detail, the electrochromic layer may be made of a liquid or solid electrochromic material, and this electrochromic material is a material that has electrochromic properties in which light absorbance changes due to electrochemical oxidation and reduction reactions, and is Depending on whether or not the voltage is applied and the strength of the voltage, electrochemical oxidation and reduction of the electrochromic material occurs reversibly, and as a result, the transparency and absorbance of the electrochromic material can be reversibly changed.
도 1에서 나타낸 바와 같이, 상기 전기변색층(140)은 전해질층(130)과 반사층(150) 또는 투명전도막(160) 사이에 형성되어 투명전극(130)과 반사층(150)에서 인가된 전기를 전달받아 산화반응 또는 환원반응을 통해 착색 또는 탈색할 수 있다.As shown in FIG. 1, the electrochromic layer 140 is formed between the electrolyte layer 130 and the reflective layer 150 or the transparent conductive film 160 and transmits electricity applied from the transparent electrode 130 and the reflective layer 150. It can be colored or decolorized through an oxidation or reduction reaction.
상기 전기변색층은 텅스텐을 포함하는데, 상기 텅스텐은 수소화 텅스텐일 수 있으며, 상기 수소화 텅스텐은 화학식 HcWO3(여기서, 0＜C＜3)로 나타낼 수 있다.The electrochromic layer includes tungsten, which may be tungsten hydride, and the tungsten hydride may be represented by the chemical formula HcWO3 (where 0<C<3).
본 발명에서는 전기변색층에 수소화된 텅스텐을 사용할 경우, 전기변색층에서의 산화 환원반응을 위해 이온을 주입할 필요가 없어 바람직하다.In the present invention, when hydrogenated tungsten is used in the electrochromic layer, it is preferable because there is no need to implant ions for the redox reaction in the electrochromic layer.
본 발명에 따른 전기변색 디바이스에 있어서, 상기 반사층(150)은 전기변색층을 통과하여 입사한 빛을 반사하는 반사판과 투명전극(110)의 상대전극 역할을 하는 것으로, 종래기술에서 일반적으로 반사층은 다공성으로 만들어 물 또는 물분자가 통과할 수 있어야 하나, 본 발명에서는 이미 이온저장층(120)과 전기변색층(140) 중 적어도 하나에서 수소화 금속산화물을 포함하기 때문에, 본 발명에서의 반사층(150)은 비다공성의 순수 금속막으로만 이루어질 수 있다.In the electrochromic device according to the present invention, the reflective layer 150 serves as a counter electrode of the transparent electrode 110 and a reflector that reflects light incident through the electrochromic layer. In the prior art, the reflective layer is generally It must be made porous so that water or water molecules can pass through it, but in the present invention, since at least one of the ion storage layer 120 and the electrochromic layer 140 already contains a hydrogenated metal oxide, the reflective layer 150 in the present invention ) can only be made of a non-porous pure metal film.
상기 반사층은, 특별히 한정이 없고, 예를 들면, 알루미늄, 은, 루비듐, 몰리브덴, 크롬, 루테늄, 금, 구리, 니켈, 납, 주석, 인듐 및 아연으로부터 선택되는 1종 이상으로 이루어질 수 있다.There is no particular limitation on the reflective layer, and for example, it may be made of one or more types selected from aluminum, silver, rubidium, molybdenum, chromium, ruthenium, gold, copper, nickel, lead, tin, indium, and zinc.
상기 투명전도층의 두께는 150∼800nm이고, 상기 이온저장층의 두께는 50∼500nm이며, 상기 전해질층의 두께는 180∼800nm이고, 상기 전기변색층의 두께는 140∼650nm이며, 상기 반사층의 두께는 30∼280nm인 것이 바람직한데,The thickness of the transparent conductive layer is 150 to 800 nm, the thickness of the ion storage layer is 50 to 500 nm, the thickness of the electrolyte layer is 180 to 800 nm, the thickness of the electrochromic layer is 140 to 650 nm, and the thickness of the reflective layer is 140 to 650 nm. The thickness is preferably 30 to 280 nm.
상기 투명전도층의 두께가 150nm 미만이면 전기전도도가 충분하지 않게 되어 바람직하지 않고, 800nm를 초과하면 불투명해지거나 투명도가 낮아져 바람직하지 않으며,If the thickness of the transparent conductive layer is less than 150 nm, the electrical conductivity is insufficient and thus undesirable, and if it exceeds 800 nm, it becomes opaque or has lower transparency, which is undesirable.
상기 이온저장층의 두께가 50nm 미만이면 이온의 저장량이 충분하지 못하여 변색효과 발현이 어렵게 되어 바람직하지 않고, 500nm를 초과하면 이온 이동시 이온저장층이 너무 두꺼워 그 두께로 인해 충분한 시간 내에 이온이 이온저장층을 벗어날 수 없어 바람직하지 않으며,If the thickness of the ion storage layer is less than 50 nm, the storage amount of ions is not sufficient, making it difficult to develop a discoloration effect, which is not desirable. If it exceeds 500 nm, the ion storage layer is too thick when ions move, so the ions are stored within a sufficient time due to the thickness. It is undesirable because you cannot leave the floor,
상기 전해질층의 두께가 180nm 미만이면 전해질층의 상하에 존재하는 전기변색층과 이온저장층 간의 접촉이 발생할 수 있어 바람직하지 않고, 800nm를 초과하면 이온의 이동을 가로막게 되어 전기변색효과 발현이 어려워 바람직하지 않으며,If the thickness of the electrolyte layer is less than 180 nm, it is undesirable because contact between the electrochromic layer and the ion storage layer existing above and below the electrolyte layer may occur, and if it exceeds 800 nm, the movement of ions is blocked, making it difficult to develop the electrochromic effect. It is not desirable,
상기 전기변색층의 두께가 140nm 미만이면 이온과 충분하게 반응할 수 없어 변색현상이 매우 약해지게 되어 바람직하지 않고, 650nm를 초과하면 전기장의 세기를 약화시켜 이온의 움직임을 방해할 수 있어 바람직하지 않으며,If the thickness of the electrochromic layer is less than 140 nm, it cannot sufficiently react with ions and the discoloration phenomenon becomes very weak, which is undesirable. If it exceeds 650 nm, the strength of the electric field can be weakened and the movement of ions can be hindered, which is undesirable. ,
상기 반사층의 두께가 30nm 미만이면 반사와 투과가 동시에 나타나게 되어 반사층으로의 역할이 어려워 바람직하지 않고, 280nm를 초과하면 전기저항이 높아져 디바이스 전체의 전력 사용량이 증가하게 되어 바람직하지 않다.If the thickness of the reflective layer is less than 30 nm, reflection and transmission occur simultaneously, making it difficult to function as a reflective layer, which is undesirable. If it exceeds 280 nm, the electrical resistance increases, which is undesirable because the power usage of the entire device increases.
도면에는 도시하지 않았지만, 투명전도층(130)의 일 끝단에 제1 기판 및 투명전도층의 일 끝단에 제2 기판이 형성될 수 있고, 또한, 상기 제1 및 제2 기판의 일 끝단에 전극 속부가 추가로 형성될 수 있다.Although not shown in the drawing, a first substrate may be formed at one end of the transparent conductive layer 130 and a second substrate may be formed at one end of the transparent conductive layer, and electrodes may be formed at one end of the first and second substrates. Additional internal parts may be formed.
본 발명에 따른 전기변색 디바이스에 있어서, 이온저장층의 공동증착된 수소화 탄탈룸 및 수소화 이리듐의 박막의 투과율을 측정하여 파장에 따른 탈색과 변색의 결과를 하기 표 1 및 도 6에 나타내었고, 작동시 전력 인가의 범위 측정 결과는 하기 표 2 및 도 7에 나타내었다.In the electrochromic device according to the present invention, the transmittance of the thin film of tantalum hydride and iridium hydride co-deposited in the ion storage layer was measured, and the results of discoloration and discoloration according to wavelength are shown in Table 1 and Figure 6 below, and when operating, The results of measuring the range of power application are shown in Table 2 and Figure 7 below.
또한, 본 발명에 따른 전기변색 디바이스에 있어서, 전기변색층의 수소화 텅스텐의 투과율을 측정하였고, 파장에 따른 탈색과 변색의 결과를 하기 표 3 및 도 8에 나타내었고, 작동시 전력 인가의 범위 측정 결과는 하기 표 4 및 도 9에 나타내었다.In addition, in the electrochromic device according to the present invention, the transmittance of tungsten hydride of the electrochromic layer was measured, and the results of discoloration and discoloration according to wavelength are shown in Table 3 and Figure 8 below, and the range of power application during operation was measured. The results are shown in Table 4 and Figure 9 below.
이상으로 본 발명의 기술적 사상을 예시하기 위한 바람직한 구체예와 관련하여 설명하고 도시하였지만, 본 발명은 이와 같이 도시되고 설명된 그대로의 구성 및 작용에만 국한되는 것은 아니며, 기술적 사상의 범주를 일탈함 없이 본 발명에 대해 다수의 적절한 변형 및 수정이 가능함을 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자들은 잘 이해할 수 있을 것이다. 따라서 그러한 모든 적절한 변형 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다.Although the present invention has been described and illustrated in relation to preferred embodiments to illustrate the technical idea of the present invention, the present invention is not limited to the configuration and operation as shown and described, and does not deviate from the scope of the technical idea. Those skilled in the art will be able to understand that many appropriate variations and modifications can be made to the present invention. Accordingly, all such appropriate variations, modifications and equivalents should be considered to fall within the scope of the present invention.
110: 투명전도층
120: 이온저장층
130: 전해질층
140: 전기변색층
150: 반사층
160: 투명전도층110: Transparent conductive layer
120: Ion storage layer
130: Electrolyte layer
140: Electrochromic layer
150: reflective layer
160: Transparent conductive layer
Claims (7)
상기 이온저장층은 공동증착되어 형성되는 화학식 HaIrO2(여기서, 0＜a＜2)의 수소화 이리듐 및 화학식 HbTa2O5(여기서, 0＜b＜5)의 수소화 탄탈룸을 포함하고,
상기 전해질층은 탄탈룸을 포함하고,
상기 전기변색층은 텅스텐을 포함하고,
상기 반사층은 비다공성 금속막으로 이루어진 것을 특징으로 하고,
상기 이온저장층은, 2.4mW/cm2의 전력이 인가되는 경우 착색되고, 0.4mW/cm2의 전력이 인가되는 경우 탈색되도록 구현되는, 전기변색 디바이스.
An electrochromic device comprising a transparent conductive layer, an ion storage layer, an electrolyte layer, an electrochromic layer, and a reflective layer,
The ion storage layer includes iridium hydride of the chemical formula H a IrO 2 (where 0 < a < 2) and tantalum hydride of the chemical formula H b Ta 2 O 5 (where 0 < b < 5), which are formed by co-deposition. ,
The electrolyte layer includes tantalum,
The electrochromic layer includes tungsten,
The reflective layer is characterized in that it is made of a non-porous metal film,
The ion storage layer is implemented to be colored when a power of 2.4 mW/cm 2 is applied and to be discolored when a power of 0.4 mW/cm 2 is applied.
상기 투명전도층은 산화인듐아연(IZO), 산화인듐주석(ITO), 알루미늄 도핑된 산화아연(AZO), 붕소 도핑된 산화아연(BZO), 텅스텐 도핑된 산화아연(WZO) 및 텅스텐 도핑된 산화주석(WTO), 불소 도핑된 산화주석(FTO), 갈륨 도핑된 산화아연(GZO), 안티몬 도핑된 산화주석(ATO), 인듐 도핑된 산화아연(IZO) 및 니오븀 도핑된 산화티타늄(ZnO)으로부터 선택되는 1종 이상의 산화물을 포함하는 것을 특징으로 하는 전기변색 디바이스.
According to paragraph 1,
The transparent conductive layer is made of indium zinc oxide (IZO), indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), tungsten-doped zinc oxide (WZO), and tungsten-doped oxide. From tin (WTO), fluorine-doped tin oxide (FTO), gallium-doped zinc oxide (GZO), antimony-doped tin oxide (ATO), indium-doped zinc oxide (IZO) and niobium-doped titanium oxide (ZnO). An electrochromic device comprising at least one selected oxide.
상기 이온저장층은 이리듐을 20∼38중량% 포함하는 것을 특징으로 하는 전기변색 디바이스.
According to paragraph 1,
An electrochromic device characterized in that the ion storage layer contains 20 to 38% by weight of iridium.
상기 전기변색층에 있어서, 상기 텅스텐은 화학식 HcWO3(여기서, 0＜C＜3)의 수소화 텅스텐인 것을 특징으로 하는 전기변색 디바이스.
According to paragraph 1,
In the electrochromic layer, the tungsten is a tungsten hydride of the chemical formula H c WO 3 (where 0 < C < 3).
상기 반사층은 알루미늄, 은, 루비듐, 몰리브덴, 크롬, 루테늄, 금, 구리, 니켈, 납, 주석, 인듐 및 아연으로부터 선택되는 1종 이상으로 이루어지는 것을 특징으로 하는 전기변색 디바이스.
According to paragraph 1,
An electrochromic device, wherein the reflective layer is made of at least one selected from aluminum, silver, rubidium, molybdenum, chromium, ruthenium, gold, copper, nickel, lead, tin, indium, and zinc.
상기 투명전도층의 두께는 150∼800nm이고, 상기 이온저장층의 두께는 50∼500nm이며, 상기 전해질층의 두께는 180∼800nm이고, 상기 전기변색층의 두께는 140∼650nm이며, 상기 반사층의 두께는 30∼280nm인 것을 특징으로 하는 전기변색 디바이스.
According to paragraph 1,
The thickness of the transparent conductive layer is 150 to 800 nm, the thickness of the ion storage layer is 50 to 500 nm, the thickness of the electrolyte layer is 180 to 800 nm, the thickness of the electrochromic layer is 140 to 650 nm, and the thickness of the reflective layer is 140 to 650 nm. An electrochromic device characterized by a thickness of 30 to 280 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020170134375A KR102596681B1 (en) | 2016-03-07 | 2017-10-17 | Electrochromic Device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020160027014A KR101793651B1 (en) | 2016-03-07 | 2016-03-07 | Electrochromic Device |
| KR1020170134375A KR102596681B1 (en) | 2016-03-07 | 2017-10-17 | Electrochromic Device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020160027014A Division KR101793651B1 (en) | 2016-03-07 | 2016-03-07 | Electrochromic Device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170119323A KR20170119323A (en) | 2017-10-26 |
| KR102596681B1 true KR102596681B1 (en) | 2023-11-02 |
Family
ID=88747560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170134375A KR102596681B1 (en) | 2016-03-07 | 2017-10-17 | Electrochromic Device |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR102596681B1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996006203A1 (en) | 1994-08-19 | 1996-02-29 | Optical Coating Laboratory, Inc. | Electrochromic materials and devices, and method |
| JP2000002895A (en) * | 1998-04-14 | 2000-01-07 | Murakami Corp | Sealing structure of all solid type electrochromic antidazzle mirror |
| US20140002881A1 (en) | 2012-06-28 | 2014-01-02 | Electronics And Telecommunications Research Institute | Self-powered electrochromic devices using a silicon solar cell |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2752570B1 (en) * | 1996-08-22 | 1998-10-02 | Saint Gobain Vitrage | GLAZING WITH VARIABLE OPTICAL AND / OR ENERGY PROPERTIES |
| FR2882828B1 (en) * | 2005-03-03 | 2007-04-06 | Saint Gobain | METHOD FOR SUPPLYING AN ELECTROCOMMANDABLE DEVICE HAVING VARIABLE OPTICAL AND / OR ENERGY PROPERTIES |
| KR101157294B1 (en) | 2005-12-01 | 2012-06-15 | 두산인프라코어 주식회사 | Electric governor controller |
| FR2934062B1 (en) | 2008-07-17 | 2010-08-13 | Saint Gobain | INFRARED CONTROLLED REFLECTIVE ELECTROCHROME DEVICE |
-
2017
- 2017-10-17 KR KR1020170134375A patent/KR102596681B1/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996006203A1 (en) | 1994-08-19 | 1996-02-29 | Optical Coating Laboratory, Inc. | Electrochromic materials and devices, and method |
| JP2000002895A (en) * | 1998-04-14 | 2000-01-07 | Murakami Corp | Sealing structure of all solid type electrochromic antidazzle mirror |
| US20140002881A1 (en) | 2012-06-28 | 2014-01-02 | Electronics And Telecommunications Research Institute | Self-powered electrochromic devices using a silicon solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170119323A (en) | 2017-10-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108474990B (en) | Electrochromic device | |
| US20210191214A1 (en) | Faster switching low-defect electrochromic windows | |
| KR102021011B1 (en) | Electrochromic device | |
| US7158276B1 (en) | Pressure sensitive electrochromic device and method of fabricating the same | |
| KR20170101702A (en) | Electrochromic device | |
| US8238016B2 (en) | Photovoltachromic device and the application thereof | |
| EP1301824A2 (en) | Fast-switching reversible electrochemical mirror (rem) | |
| KR20180027718A (en) | Electrochromic glass system, smart windows glass system using the electrochromic glass system and production method of smart windows glass system | |
| US20090052005A1 (en) | Electronic Electrochromic Device and Method | |
| KR20170121669A (en) | Self-powering electrochromic devices containing small molecule organic ligand-metal oxide layer | |
| US8743447B2 (en) | Electrochromic device and storage device and manufacturing method thereof | |
| CN113376889A (en) | Electrochromic device based on polymer dispersed liquid crystal, preparation method and electronic equipment | |
| KR101793651B1 (en) | Electrochromic Device | |
| Cronin et al. | Electrochromic glazing | |
| KR102596681B1 (en) | Electrochromic Device | |
| KR102393605B1 (en) | Electrochromic apparatus | |
| KR101801668B1 (en) | Electrochromic apparatus | |
| TWI662350B (en) | Electrochromic panel | |
| KR102536742B1 (en) | Electrochromic apparatus | |
| JP6478041B2 (en) | Driving method of electrochromic device | |
| JP2013015805A (en) | Electrochromic device and manufacturing method thereof | |
| KR102633570B1 (en) | Electrochromic mirror using tungsten oxide film and optical modulator including same | |
| JP6776510B2 (en) | Electrochromic display elements, display devices, information equipment, manufacturing methods for electrochromic display elements, electrochromic dimming lenses | |
| EP4343418A1 (en) | Electrochromic element and eyeglass lens | |
| EP3958051A1 (en) | Electrochemical device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right |